IRRADIATION SYSTEMS USING CURVED SURFACES

Abstract

One aspect of the disclosure relates to an irradiation system. The irradiation system may include: a first irradiation source coupled with a base at a first position; a second irradiation source coupled with the base at a second position; a first reflector configured to direct irradiation from the first irradiation source to a first desired focal point; and a second reflector configured to direct irradiation from the second irradiation source to the first desired focal point or a second, distinct desired focal point.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation-in-part of U.S. patent application Ser. No. 14/524,730, which is a continuation of U.S. Pat. No. 8,869,419 (U.S. patent application Ser. No. 12/660,405), which claims benefit to U.S. Patent Ser. No. 61/152,416 and which is a continuation-in-part of U.S. patent application Ser. No. 12,704,104, which claims benefit to U.S. Patent Ser. No. 61/208,485, each of which are incorporated herein by reference in their entirety.

BACKGROUND

Technical Field

The present disclosure relates to irradiation of surfaces and, in particular, this invention relates to irradiation of surfaces from reflectors.

Background

Typically, parabolic or elliptical reflectors are used for directing radiation using reflective optics to achieve uniform or focused irradiance, respectively. Obviously, other irradiance patterns can be generated using more complex reflector geometries. However, the quality of focus or collimating irradiance is largely dependent on how well irradiance is concentrated at the focal point of the optic. The foregoing problem is illustrated in FIGS. 1A-1B, exemplifying an elliptical reflector 100 and a radiant (arc) source 102. While the reflective optic could be any curved surface, generally elliptical (focusing) or parabolic (collimating) reflective optics is most common. While this discussion applies to several reflector system geometries, the elliptical reflector depicted in FIGS. 1A-1B is illustrative. In FIG. 1A, assuming a small point arc source placed at the focal point F₁ of the elliptical reflector 100, emitted radiation, as exemplified by light rays 103, can be focused at a secondary focal point F₂ to achieve a desirable discrete focal image 104. However, in FIG. 1B a very small translation along focusing direction h of the point arc source 102 away from the focal point F₁ defocuses the image about the second focal point F₂ as shown at 106.

SUMMARY

A first aspect of the disclosure relates to an irradiation system. The irradiation system may include: a first irradiation source coupled with a base at a first position; a second irradiation source coupled with the base at a second position; a first reflector configured to direct irradiation from the first irradiation source to a first desired focal point; and a second reflector configured to direct irradiation from the second irradiation source to the first desired focal point or a second, distinct desired focal point.

A second aspect of the disclosure relates to method of manufacturing an irradiation system for irradiating a surface. The method may include: positioning a first and second irradiation source on a base; positioning a first reflector and a second reflector on the base such that irradiation from the first irradiation source is directed to the first reflector and irradiation from the second irradiation source is directed to the second reflector; and adjusting a parameter of at least one of: the first irradiation source, the second irradiation source, the first reflector, or the second reflector such that irradiation from the first reflector and the second reflector are directed to one or more desired focal points.

BRIEF DESCRIPTION OF THE DRAWINGS

The embodiments of this disclosure will be described in detail, with reference to the following figures, wherein like designations denote like elements, and wherein:

FIGS. 1A-1B shows a reflector of the prior art.

FIG. 2 shows a schematic of an ellipse diagram of an irradiation system according to an embodiment of the disclosure.

FIG. 3 shows a cross-sectional perspective view of an irradiation system according to an embodiment of the disclosure.

FIG. 4 shows a cross-sectional perspective view of an asymmetric irradiation system according to an embodiment of the disclosure.

FIG. 5 shows a cross-sectional perspective view of an asymmetric irradiation system according to an embodiment of the disclosure.

FIG. 6 shows a cross-sectional perspective view of an asymmetric irradiation system according to an embodiment of the disclosure.

FIG. 7 shows a cross-sectional perspective view of an asymmetric irradiation system according to an embodiment of the disclosure.

FIG. 8 shows a graph of a possible irradiance profile according to an embodiment of the disclosure.

FIG. 9 shows a schematic of an irradiation source assembly according to an embodiment of the disclosure.

FIG. 10 shows a schematic of an irradiation source assembly according to an embodiment of the disclosure.

FIG. 11 shows a schematic of an irradiation source assembly according to an embodiment of the disclosure.

FIG. 12 shows a schematic of an irradiation source assembly according to an embodiment of the disclosure.

FIG. 13 shows a bottom-up view of an irradiation system according to an embodiment of the disclosure.

It is noted that the drawings of the disclosure are not to scale. The drawings are intended to depict only typical aspects of the disclosure, and therefore should not be considered as limited the scope of the disclosure. In the drawings, like numbering represents like elements between the drawings.

DETAILED DESCRIPTION

The present disclosure relates to irradiation of surfaces and, in particular, this invention relates to irradiation of surfaces from reflectors. As will be described herein, embodiments of the disclosure provide for irradiation systems having double ellipse reflective surfaces to optimize irradiation at one or more desired focal points and/or a focal line. Embodiments of the disclosure allow for the customization of the irradiation systems to provide uniform irradiation along the long axis of the reflector with a specific customizable profile at a position that is perpendicular to the long axis of the reflector. Embodiments of the disclosure envision the use of reflector systems that are linear so that a cross section of the reflector system at any point along the length of the reflector possesses nominally the same shape and optical properties. While the reflector cross section shows optical performance in two dimensions showing focused irradiation to a point, in actual operation, the linear reflector would focus irradiation to a line as discussed in U.S. Pat. No. 8,869,419 (U.S. patent application Ser. No. 12/660,405), which is incorporated herein by reference in its entirety. Terminology of focal point/line used herein refers to optical properties of the system measured in a two-dimensional cross section point that could also be drawn as a three-dimensional line parallel to the long axis of the reflector.

FIG. 2 shows a schematic of an ellipse diagram of an irradiation system 200 according to an embodiment of the disclosure and will be discussed first to introduce terminology that will be used herein. FIG. 2 shows a first ellipse 202 and a second ellipse 204. In this schematic, ellipses 202, 204 each represent an elliptical reflector (which will be discussed herein). First ellipse 202 may have a first eccentricity ε₁ and second ellipse 204 may have a second eccentricity ε₂. As used herein, “eccentricity” refers to the deviation of the ellipse from a perfect circle. As an example, an eccentricity of 0 is a perfect circle, whereas an eccentricity of 1 is a straight line. Ellipses 202, 204 may each include a primary focal point/line F₁ and F₂, respectively. In this schematic, F₁ and F₂ denote locations where light or irradiation is transmitted, for example, from irradiation source (which will be discussed herein). Ellipses 202, 204 are each configured to focus or direct irradiation from F₁ and F₂ to a secondary focal point/line F_C, or a location where irradiation is desired to be focused. As shown, ellipse 202 focuses irradiation 206 from F₁ to F_C and ellipse 204 focuses irradiation 208 from F₂ to F_C.

Still referring to FIG. 2, h₁, h₂, and h_C represent reference lines about which rotations and/or angling of features of irradiation system 200 may occur. It is to be noted that because FIG. 2 is a cross-sectional, two-dimensional view, h₁, h₂ and h_C represent lines connecting focal points, but in the three-dimensional applications envisioned, these lines translated along the long axis of the reflector would constitute planes containing h₁, h₂ and h_C. h1 represents a reference line created between the irradiation sources positioned at F₁ and the conjugate focal point/line F_C, or the major axis of first ellipse 202; h₂ represents a reference line created between the irradiation sources positioned at F₂ and the conjugate focal point/line F_C, or the major axis of second ellipse 204; and h_C represents a reference line created by between the conjugate focal point/line F_C and the point at which ellipses 202, 204 intersect between F₁ and F₂. The angle of the major axis h₁ to h_C is represented by angle θ₁; and the angle of the major axis h₂ to h_C is represented by angle θ₂. The center-of-line axis of the cross-sectional view of the irradiation source at F₁ is represented by h_LS1, and the center-of-line axis of the cross-sectional view of the irradiation source at F₂ is represented by h_LS2. The rotation of the center-of-line axis h_LS1 of irradiation source at F₁ relative to h₁ is represented by angle φ₁; and the rotation of the center-of-line axis h_LS2 of irradiation source at F₂ relative to h₂ is represented by angle φ₂. As will be described herein, h_LS1, h_LS2, θ₁, θ₂, φ₁, φ₂, ε₁, and ε₂ may be customized based on the desired location of F_C, the amount of irradiance desired at F_C, and the type of irradiation source used at F₁ and F₂.

Turning now to FIG. 3, a cross-sectional perspective view of irradiation system 300 according to an embodiment of the disclosure is shown. Irradiation system 300 may include irradiation sources 302, 304 attached to, coupled to, connected to, integrated with, fixed to, and/or joined with a base 306 at respective positions. Irradiation sources 302, 304 may each include at least one of: infrared (IR) source, a light emitting diode (LED), an organic LED, an inorganic LED, a polymer LED, an active-matrix organic LED (AMOLED), or an array of more than one of LEDs discussed herein. However, it is to be understood that any irradiation source may be used without departing from aspects of the disclosure. In some embodiments, it may be desirable to include at least one IR source together with one or more LEDs such that the IR source may be used to provide heating to accelerate a polymerization process that may take place in a curing application. Additionally, any number of irradiation sources 302, 304 may be included without departing from aspects of the disclosure. In some embodiments, it may be desirable for base 306 to include an array of more than one irradiation source 302, 304. In such an embodiment, irradiation sources 302, 304 may be configured as described in U.S. Pat. No. 8,869,419 (U.S. patent application Ser. No. 12/660,405), such that irradiation sources 302, 304 may be arranged spatially in a pattern on base 306 such that a linear fill factor characterizing such a emission profile or pattern is at least 80% along a focusing direction and/or at least 20% along a direction normal, or otherwise transverse, to the focusing direction.

Irradiation sources 302, 304 may be of the same type, emission profile, and/or wavelength relative to each other. As used herein, emission profile refers to the spectrum of irradiation emitted by an irradiation source. However, in other embodiments, irradiation sources 302, 304 may be of a different type, emission profile, and/or wavelength relative to each other. In other embodiments, irradiation sources 302, 304 within a respective array of irradiation sources 302, 304 at F₁, F₂ may be of different type, emission profile, and/or wavelength relative to an adjacent irradiation sources 302, 304 within the respective array. Base 306 may be a mounting surface for irradiation sources 302, 304 and include a heat sink for absorbing excessive or unwanted heat from irradiation sources 302, 304, and may be of any shape. That is, base 306 is not limited to the trapezoidal shape shown in FIG. 3, but may be customized based on the particular mounting surface (e.g., base 306), electrical connection and thermal management requirements of the irradiation sources 302, 304, and to set the optimized emission angles φ₁ and φ₂ so as to obtain the designed irradiance profile at F_C.

Irradiation system 300 may also include elliptical reflectors 310, 312. That is, irradiation system 300 may be a double ellipse system. Elliptical reflectors 310, 312 may include any irradiation control device that directs irradiance generated from a primary focal point/line, e.g., F₁, F₂ (FIG. 2), to a desired secondary focal point/line, e.g., F_C. For example, elliptical reflectors 310, 312 may direct irradiance 314, 316 from irradiation sources 302, 304 to F_C. In some embodiments, elliptical reflectors 310, 312 may be attached to, coupled to, connected to, integrated with, fixed to, and/or joined with base 306. Eccentricities ε₁, ε₂ of elliptical reflectors 310, 312 may be dependent upon the type, wavelength, and/or emission profile of irradiation source 302, 304. Eccentricities ε₁, ε₂ may be the same or different relative to each other. For example, where irradiation sources 302, 304 includes a broad emission profile, elliptical reflectors 310, 312 may have a smaller eccentricity ε₁. Where irradiation sources 302, 304 includes a narrow emission profile elliptical reflectors 310, 312 may have a greater eccentricity ε₂. As used herein, a broad emission profile may refer to an unfocused, wide angle emission, e.g., a Lambertian emission profile, and a narrow emission profile may refer to a focused angle emission. Eccentricities ε₁, ε₂ can be greater than approximately 0.50 and less than approximately 0.95. More specifically, eccentricities ε₁, ε₂ can be greater than or equal to approximately 0.60 and less than or equal to approximately 0.90. Eccentricities ε₁, ε₂ can be determined by conventional modeling software such as ASAP® (from Brault Research Organization Inc., Tucson, Ariz.), ASAP® Pro (from Brault Research Organization Inc., Tucson, Ariz.), and Zemax® (from Zemax LLC, Redmond, Wash.).

In some embodiments, elliptical reflectors 310, 312 and base 306 may be separately attached to, coupled to, connected to, integrated within, fixed to, and/or joined within a housing or assembly (not shown). In either embodiment, a concave surface of each elliptical reflector 310, 312 may face the concave surface of the other elliptical reflector 310, 312 such that elliptical reflectors 310, 312 openly face one another. However, it is to be understood that irradiation system 300 may include a single elliptical reflector and/or multiple separate elliptical reflectors arranged such that the reflector(s) substantially surround base 306 dependent on the number of irradiation sources 302, 304 used. Additionally, since FIG. 3 is a cross-sectional view of irradiation system 300, it should be understood that base 306 and elliptical reflectors 310, 312 may run into and/or out of the page. Further, since base 306 may include an array of irradiation sources 302, it is to be understood that the array of irradiation sources may run into and/or out of the page on base 306. Further, desired focal point F_C may actually be a focal line running into and/or out of the page.

Irradiation system 300 may be configured to irradiate a surface with irradiation from irradiation sources 302, 304. For example, irradiation system 300 can be used in horticultural lighting to provide uniform irradiation for a plant. Additionally, irradiation system 300 can be used in curing applications. An example of one such curing application is within a printer. As font and/or pictures are printed by the printer on paper, the ink is uncured or wet. In order to dry and/or cure the ink, irradiation system 300 can be used. That is, the location of F_C can be selected to be the location on the paper where ink is desired to be cured. Irradiation system 300 can be coupled to the printer and/or may be a separated element adjacent to the printer. The chemical curing process at F_C can be controlled or customized by adjusting parameters of irradiation system 300. The parameters that can be adjusted may include at least one of: the type of irradiation sources 302, 304 used, the wavelength and/or emission profile/pattern of irradiation sources 302, 304; the angle of each irradiation source 302, 304 relative to h_C, respectively, i.e., angles θ₁, θ₂; the eccentricity ε₁, ε₂ of elliptical reflectors 301, 312; the angle of rotation of the center-of-line axis h_LS1, h_LS2 of each irradiation source 302, 304 relative to h₁, h₂, respectively, i.e., angles φ₁, φ₂. That is, angle θ₁ and angle θ₂ may be adjusted such that they are the same or different relative to each other and angle φ₁ and angle φ₂ may be adjusted such that they are the same or different from each other.

For example, FIG. 4 shows an asymmetric embodiment of irradiation system 300 where elliptical reflectors 310, 312 have the same eccentricity ε₁, ε₂. Base 306 (FIG. 3) is not shown in FIG. 4 for brevity. However, the angles of reference lines h₁ and h₂ relative to h_C, i.e., angles θ₁, θ₂, may be different from one another. In this example, h₁ and hc are collinear with one another, therefore, angle θ₁ is equal to 0°. h₂ is not collinear with h_C, therefore, angle θ₂ is greater than 0°. In one example, this embodiment may be used in a curing application where the curing surface is not flat and it may be desirable to change the angle of incidence of one of reflectors 310, 312 so as to provide adequate irradiance to non-planar surfaces (e.g., textured print media).

FIG. 5 shows another example of an asymmetric embodiment of irradiation system 300. In this example, the angles of reference lines h₁ and h₂ relative to h_C may be the same as described with respect to FIG. 4. That is angle θ₁ may be equal to 0° and angle θ₂ may be greater than 0°. However, irradiation sources 302, 304 may be of different types, wavelengths, and/or emission profiles. Therefore, eccentricities ε₁, ε₂ of elliptical reflectors 310, 312 may be different in order to focus irradiance 314, 316 from irradiation sources 302, 304 at F₁, F₂ to F_C.

FIG. 6 shows another example of an asymmetric embodiment of irradiation system 300. In this example, h₁ is not collinear with h_C, and angle θ₁ is equal to angle θ₂. Additionally, the eccentricities ε₁, ε₂ of elliptical reflectors 310, 312 are equal to each other. However, the center-of-line axis, i.e., h_LS1, h_LS2, of irradiation sources 302, 304 are rotated at different angles. As shown, the angles of references line h_LS2 relative to h₂ is 90°, therefore angle φ₂ is equal to 90°. h_LS1 is at an angle relative to h₁ that is less than 90°, therefore angle φ₁ is less than 90°. Due to the angle of angle φ₂, some of the irradiation may not be focused at F_C. The previous embodiments optimize angle φ₁ and angle φ₂ for a particular emission profile from irradiation sources 302, 304 to achieve peak irradiance at F_C. However, this embodiment demonstrates that embodiments of the disclosure also contemplate a situation where peak irradiance from one irradiation source is not desired, for example, where the wavelengths of irradiation sources 302, 304 are not the same.

FIG. 7 shows another example of an asymmetric embodiment of irradiation system 300. In this example, irradiation from irradiation source 302 may be focused at a first desired focal point/line F_C1 while irradiation from irradiation source 304 may be focused at a second, distinct desired focal point/line F_C2. This may be achieved by adjusting any one of the parameters discussed herein based on the desired locations of focal points/lines F_C1, F_C2. Additionally, it may be desirable to create a desired focal area 380 of focused irradiance defined by one or more desired focal points/lines F_C1, F_C2 and/or stray irradiance. Such embodiments may be used in a curing application, for example, where there may be films or shapes of differing thicknesses and/or dimensions.

It should be clear that the examples discussed herein are merely exemplary. Any modifications of any of the parameters discussed herein can be achieved without departing from aspects of the disclosure. For example, reflectors 310, 312 may be parabolic, circular, or a compound elliptical instead of elliptical. The customization of irradiation system 300 provides for the optimization of irradiance at F_C dependent on the desired application of irradiation system 300, e.g., dependent on the desired chemical process to take place at F_C in curing applications. Additionally, these parameters may be customized to accommodate the size and/or spacing within housing/assembly of irradiation system 300 or hardware require to execute curing.

FIG. 8 shows a graph which further elaborates on these benefits. This graph shows an example of a possible irradiance profile when φ₁ and φ₂ are different. The emission wavelength of irradiation sources 302, 304 may be of the same or different wavelengths. This irradiance profile may ordinarily be used for a curing specification where the material to be cured would first be exposed to a lower irradiance to initiate a polymerization reaction, which is then accelerated for more rapid completion. This exposure sequence would be realized if the material to be cured traverses the line perpendicular to focal point/line F_C from left to right in the figure shown. The rate of irradiation exposure can be used to optimize the polymerization chain length and degree of cross-linking that takes place during the curing. These parameters can impact hardness, stain resistance and other important parameters of the cured material.

FIGS. 9-10, show examples of an irradiation source assembly 320 including lens 322. As discussed herein, irradiation sources 302, 304 may be attached to base 306. Embodiments of the present disclosure also provide for a lens 322 for controlling irradiance from irradiation sources 302, 304. Lens 322 may include any clear plastic, glass or quartz material that is transparent at the wavelengths emitted by the sources. Such materials may include, for example, glass, quartz, and optical plastics such as polycarbonate, polymethylmethacrylate, and polyethylene derivatives. Lens 322 may each be attached to, coupled to, connected to, integrated with, fixed to, and/or joined with irradiation source 302, 304. For example, lens 322 could be attached to irradiation source 302, 304 via any suitable transparent bonding material having a refractive index exceeding approximately 1.4 (and can even be as high as approximately 1.6), such as a UV stable silicone, or transparent fluorocarbon adhesive. Lens 322 may be substantially rectangular in shape as shown in FIG. 9 or cylindrical or more complex shaped as shown in FIG. 10. Like the other parameters discussed herein, lens 322 may be used and/or shaped to control irradiance at F_C.

FIG. 11-13 shows other example irradiation source assemblies including linear and/or staggered arrays of irradiation sources. For example, FIG. 11 shows an example irradiation source assembly 410 where irradiation sources 302, 304 include a linear array arranged in a spatial manner along focal line F₁, F₂ having gaps n between individual irradiation sources 302, 304 within an array. FIG. 12 shows an example irradiation source assembly 510 where irradiation sources 302, 304 include a linear array arranged in a spatial manner about focal line F₁, F₂. By displacing one or more irradiation sources 302, 304 along focal lines F₁, F₂, uniform irradiation from irradiation sources 302, 304 may be provided at F_C (FIGS. 4-6) even though there are gaps n in between irradiation sources 302, 304 due to configuring any of the parameters discussed herein and/or the linear fill factors discussed in U.S. Pat. No. 8,869,419 (U.S. patent application Ser. No. 12/660,405), incorporated herein by reference. Irradiation sources 302, 304 can utilize different linear fill factors and need not follow any particular alignment of gaps n and/or emitters for irradiation source 302 with regard to the alignment of gaps and/or emitters for irradiation source 304 along the focal points/lines F₁ and F₂. In fact, as shown with regard to irradiation system 610 in FIG. 13, a staggered spacing of gaps n and irradiation sources 302, 304 in one array relative to the other array along focal points/lines F₁, F₂ may be used to improve uniformity along the conjugate focal point/line F_C (FIG. 3).

Aspects of the disclosure may also include a method of manufacturing an irradiation system 300 for irradiating a surface. The method may include positioning irradiation sources 302, 304 on base 306 and positioning reflectors 310, 312 on base 306 such that irradiation from irradiation source 302 is directed to reflector 310 and irradiation from irradiation source 304 is directed to reflector 312. Additionally, the method may include adjusting a parameter of at least one of: irradiation sources 302, 304 and reflectors 310, 312 such that irradiation from reflectors 310, 312 is directed to a desired focal point/line F_C. The method may also include coupling lens 322 to irradiation sources 302, 304.

Adjusting a parameter of irradiation sources 302, 304 and reflectors 310, 312 may include adjusting at least one of: an eccentricity ε₁, ε₂ of reflectors 310, 312; a type of irradiation sources 302, 304; a wavelength of irradiation sources 302, 304; an emission profile of irradiation sources 302, 304; an angle θ₁, θ₂ between h_C and h₁, h₂; or an angle φ₁, φ₂ between h₁, h₂ and h_LS1, h_LS2.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms “a”, “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises” and/or “comprising,” when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. “Optional” or “optionally” means that the subsequently described event or circumstance may or may not occur, and that the description includes instances where the event occurs and instances where it does not.

Approximating language, as used herein throughout the specification and claims, may be applied to modify any quantitative representation that could permissibly vary without resulting in a change in the basic function to which it is related. Accordingly, a value modified by a term or terms, such as “about,” “approximately” and “substantially,” are not to be limited to the precise value specified. In at least some instances, the approximating language may correspond to the precision of an instrument for measuring the value. Here and throughout the specification and claims, range limitations may be combined and/or interchanged, such ranges are identified and include all the sub-ranges contained therein unless context or language indicates otherwise. “Approximately” as applied to a particular value of a range applies to both values, and unless otherwise dependent on the precision of the instrument measuring the value, may indicate +/−10% of the stated value(s).

The corresponding structures, materials, acts, and equivalents of all means or step plus function elements in the claims below are intended to include any structure, material, or act for performing the function in combination with other claimed elements as specifically claimed. The description of the present disclosure has been presented for purposes of illustration and description, but is not intended to be exhaustive or limited to the disclosure in the form disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the disclosure. The embodiment was chosen and described in order to best explain the principles of the disclosure and the practical application, and to enable others of ordinary skill in the art to understand the disclosure for various embodiments with various modifications as are suited to the particular use contemplated.

Claims

1. An irradiation system for irradiating a surface, the irradiation system comprising:

a first irradiation source coupled with a base at a first position;

a second irradiation source coupled with the base at a second position;

a first reflector configured to direct irradiation from the first irradiation source to a first desired focal point; and

a second reflector configured to direct irradiation from the second irradiation source to the first desired focal point or a second, distinct desired focal point.

2. The irradiation system of claim 1, wherein the first and second reflector are at least one of: elliptical or parabolic.

3. The irradiation system of claim 1, wherein an eccentricity of the first reflector and the second reflector are each greater than or equal to approximately 0.60 and less than or equal to approximately 0.90.

4. The irradiation system of claim 1, wherein an eccentricity of the first reflector is not equal to the second reflector.

5. The irradiation system of claim 1, wherein the first irradiation source is of a different type than the second irradiation source.

6. The irradiation system of claim 1, wherein the first irradiation source includes a wavelength or an emission profile that is distinct from the second irradiation source.

7. The irradiation system of claim 1, wherein an angle θ1 differs from an angle θ2, wherein the angle θ1 represents an angle between a first reference line (hC) and a second reference line (h1), the hC being defined by connecting the desired focal point to the point at which a first elliptical of the first reflector intersects with a second elliptical of the second reflector, and the h1 being defined by a first major axis of the first elliptical of the first reflector, and

wherein the angle θ2 represents an angle between the hC and a third reference line (h2), the h2 being defined by a second major axis of the second elliptical of the second reflector.

8. The irradiation system of claim 1, wherein an angle φ1 differs from an angle φ2, wherein the angle φ1 represents an angle between a first center-of-line axis (hLS1) of the first irradiation source and a first reference line (h1) defined by a first major axis of a first elliptical of the first reflector; and

wherein the angle φ2 represents an angle between a second center-of-line axis (hLS2) of the second irradiation source and a second reference line (h2) defined by a second major axis of a second elliptical of the second reflector.

9. The irradiation system of claim 1, further comprising:

a first lens coupled with the first irradiation source; and

a second lens coupled with the second irradiation source.

10. The irradiation system of claim 9, wherein the first and second lenses are at least one of: substantially rectangularly-shaped or substantially cylindrically-shaped.

11. The irradiation system of claim 1, wherein the first and second irradiation sources each include at least one of: infrared (IR) source, a light emitting diode (LED), organic LED, polymer LED, active-matrix organic LED (AMOLED), or an array of more than one thereof.

12. A method of manufacturing an irradiation system for irradiating a surface, the method comprising:

positioning a first and second irradiation source on a base;

positioning a first reflector and a second reflector on the base such that irradiation from the first irradiation source is directed to the first reflector and irradiation from the second irradiation source is directed to the second reflector; and

adjusting a parameter of at least one of: the first irradiation source, the second irradiation source, the first reflector, or the second reflector such that irradiation from the first reflector and the second reflector are directed to one or more desired focal points.

13. The method of claim 12, wherein the adjusting includes adjusting an eccentricity of the first reflector and the second reflector such that each eccentricity is greater than or equal to approximately 0.60 and less than or equal to approximately 0.90.

14. The method of claim 13, wherein the eccentricity of the first reflector is not equal to the eccentricity of the second reflector.

15. The method of claim 12, wherein the adjust includes adjusting at least one of: a type of first irradiation source, a type of the second irradiation source, a wavelength of the first irradiation source, a wavelength of the second irradiation source, an emission profile of the first irradiation source, or an emission profile of the second irradiation source.

16. The method of claim 12, wherein the adjusting includes adjusting at least one of: an angle θ1 or an angle θ2, wherein the angle θ1 represents an angle between a first reference line (hC) and a second reference line (h1), the hC being defined by connecting the desired focal point to the point at which a first elliptical of the first reflector intersects with a second elliptical of the second reflector, and the h1 being defined by a first major axis of the first elliptical of the first reflector, and

wherein the angle θ2 represents an angle between the hC and a third reference line (h2), the h2 being defined by a second major axis of the second elliptical of the second reflector.

17. The method of claim 12, wherein adjusting includes adjusting at least one of: an angle φ1 or an angle φ2, wherein the angle φ1 represents an angle between a first center-of-line axis (hLS1) of the first irradiation source and a first reference line (h1) defined by a first major axis of a first elliptical of the first reflector; and

wherein the angle φ2 represents an angle between a second center-of-line axis (hLS2) of the second irradiation source and a second reference line (h2) defined by a second major axis of a second elliptical of the second reflector.

18. The method of claim 12, further comprising:

coupling a first lens with the first irradiation source; and

coupling a second lens with the second irradiation source.

19. The method of claim 18, wherein the first and second lenses are at least one of: substantially rectangularly-shaped or substantially cylindrically-shaped.

20. The method of claim 12, wherein the first and second irradiation sources each include at least one of: infrared (IR) source, a light emitting diode (LED), organic LED, polymer LED, active-matrix organic LED (AMOLED), or an array of more than one thereof.