PACKAGING PROCESS AND PACKAGING STRUCTURE
A packaging process and a packaging structure of an electronic component are provided. By the packaging process and the packaging structure of the disclosure, the groove of the thermal conduction structure is covered by the first metal re-distribution layer. Therefore, the flank of the thermal conduction structure is easy to coat the conducting material. Moreover, because the flank of the thermal conduction structure is coated, the surface of the flank of the thermal conduction structure is difficulty oxidized. Furthermore, the conducting material between the thermal conduction structure and the board is flat, so that automated optical inspection of the packaging structure is easy to implement.
This application is a Divisional Application of U.S. patent application Ser. No. 16/262,363 filed on Jan. 30, 2019 and entitled “PACKAGING PROCESS AND PACKAGING STRUCTURE”, which claims priority to Singapore patent application No. 10201810052 W filed on Nov. 12, 2018 and entitled “PACKAGING PROCESS AND PACKAGING STRUCTURE”, the entirety of which is hereby incorporated by reference.
FIELD OF THE INVENTIONThe present invention relates to a packaging process and a packaging structure, and more particularly to a packaging process and a packaging structure of an electronic component with a wettable flank structure.
BACKGROUND OF THE INVENTIONRecently, the general trends in designing electronic devices are toward small size, light weightiness and easy portability. Moreover, with the increasing development of electronic industries, the internal circuitries of the electronic devices are gradually modularized. In other words, plural electronic components are integrated into a single electronic module. For example, a power module is one of the widely-used electronic modules. An example of the power module includes but is not limited to a DC-to-DC converter, a DC-to-AC converter or an AC-to-DC converter. After the electronic components (e.g. integrated circuit (IC) chips, capacitors, resistors, inductors, transformers, diodes and transistors) are integrated as a power module, the power module may be installed on a motherboard or a system circuit board.
Nowadays, quad flat no leads (QFN) package structure is a popular embedded structure where the lead frames are exposed at a bottom and at sides of the package. The quad flat no leads package structure doesn't outstretch pins from different side of the package. The quad flat no leads package structure is widely adopted because of many advantages such as smaller volume, cheaper cost, better production process yield and better radiating.
However, the bottom of the traditional quad flat no leads package structure has been electroplated to connect the printed circuit board through the solder, but the lead frame of the package is cut to expose the surface of the lead frame on the flank of the quad flat no leads package, and the surface of the flank of the quad flat no leads package has not been electroplated. Therefore, the flank of the quad flat no leads package is difficult to coat solder because of no electroplating. Moreover, the surface of the flank of the quad flat no leads package is oxidized easily. Furthermore, the solder connected between the lead frame of the quad flat no leads package and the printed circuit board is easily formed a protrusion outstretched on the outward appearance of the printed circuit board. Therefore, the protrusion causes difficult implementation of automated optical inspection. Although a concave is formed on the lead frame by etching method to solve the difficult implementation of automated optical inspection, but the concave is only formed on the lead frame of the bottom side of one kind of the traditional quad flat no leads package structure. Therefore, for forming the concave of the lead frame by etching method, position of the lead frame is limited.
Therefore, there is a need of providing an improved packaging process and packaging structure in order to eliminate the above drawbacks.
SUMMARY OF THE INVENTIONAn object of the present invention provides a packaging process and packaging structure. The package structure has wettable flanks. The wettable flank of the packaging structure is easy to coat conducting material and can make sure the formation of solder fillet at the power module's side wall and make the automated optical inspection possible.
An aspect of an embodiment of the present invention provides a packaging process. Firstly, a semi-package unit is provided. The semi-package unit comprises an electronic component, a thermal conduction structure, a first metal layer, a second metal layer and an insulation structure. The electronic component, the thermal conduction structure, the first metal layer and the second metal layer are embedded within the insulation structure. The first metal layer is attached on the electronic component. The second metal layer is attached on the thermal conduction structure. Then, a portion of the insulation structure is removed to form at least one concave disposed on an edge of the semi-package unit. A portion of insulation structure is removed to form plural first openings on one side of the semi-package unit and expose the first metal layer and the second metal layer. Then, a first metal re-distribution layer is formed to connect the insulation structure, the first metal layer and the second metal layer. Then, plural second openings are formed on the first metal re-distribution layer. A first mask is formed on the second opening.
Another aspect of an embodiment of the present invention provides a packaging structure. The packaging structure includes an electronic component, a thermal conduction structure, a first metal layer attached on the electronic component, a second metal layer attached on the thermal conduction structure, and an insulation structure comprising a groove and plural first openings. The electronic component, the thermal conduction structure, the first metal layer and the second metal layer are embedded within the insulation structure. A first metal re-distribution layer is contacted with the thermal conduction structure and one side of the second metal layer through the groove and contacted with the first metal layer and the other side of the second metal layer through the plural first openings.
The above contents of the present invention will become more readily apparent to those ordinarily skilled in the art after reviewing the following detailed description and accompanying drawings, in which:
The present invention will now be described more specifically with reference to the following embodiments. It is to be noted that the following descriptions of preferred embodiments of this invention are presented herein for purpose of illustration and description only. It is not intended to be exhaustive or to be limited to the precise form disclosed.
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The electronic component 13 may be an active component or a passive component. An example of the electronic component 13 includes but is not limited to an integrated circuit (IC) chip, an integrated power component, a metal-oxide-semiconductor field-effect transistor (MOSFET), a high electron mobility transistor (HEMT), an insulated-gate bipolar transistor (IGBT), a diode, a capacitor, a resistor, an inductor or a fuse. The number of the first conducting terminal 131 and the second conducting terminal 132 of the electronic component 13 are determined according to the type and the configuration of the electronic component 13. As shown in
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From the above description, the embodiments of the present invention provide a packaging process and a packaging structure. By the packaging process and the packaging structure of the embodiment of the present invention, the groove of the thermal conduction structure or insulation layer is covered by the first metal re-distribution layer. Therefore, the flank of the thermal conduction structure or insulation layer is easy to coat the conducting material. Moreover, because the flank of the thermal conduction structure or insulation layer is coated, the surface of the flank of the thermal conduction structure or insulation layer is difficulty oxidized. Furthermore, the conducting material between the thermal conduction structure or insulation layer and the board is flat, so that automated optical inspection of the packaging structure is easy to implement.
While the invention has been described in terms of what is presently considered to be the most practical and preferred embodiments, it is to be understood that the invention needs not be limited to the disclosed embodiment. On the contrary, it is intended to cover various modifications and similar arrangements included within the spirit and scope of the appended claims which are to be accorded with the broadest interpretation so as to encompass all such modifications and similar structures.
Claims
1. A packaging process comprising steps of:
- (a) providing a semi-package unit comprising an electronic component, a thermal conduction structure, a first metal layer and a second metal layer embedded within an insulation structure, wherein the first metal layer is attached on the electronic component, the second metal layer is attached on the thermal conduction structure;
- (b) removing a portion of the insulation structure to form at least one concave disposed on an edge of the semi-package unit, and removing a portion of insulation structure to form plural first openings on one side of the semi-package unit and expose the first metal layer and the second metal layer;
- (c) forming a first metal re-distribution layer to connect the insulation structure, the first metal layer and the second metal layer; and
- (d) forming plural second openings on the first metal re-distribution layer and forming a first mask on the second opening.
2. The packaging process according to claim 1, wherein before the step (a), the packaging process further comprises steps:
- forming a first recess on an edge of the thermal conduction structure;
- providing a first carrier and the electronic component, wherein one side of the electronic component comprises at least one first conducting terminal and at least one second conducting terminal, the thermal conduction structure and the other side of the electronic component are attached on the first carrier;
- providing a first insulation layer on one side of the thermal conduction structure and one side of the electronic component;
- removing the first carrier;
- forming a second recess on the other edge of the thermal conduction structure;
- forming the first metal layer on the other side of the electronic component and forming the second metal layer on the other side of the thermal conduction structure; and
- forming a second insulation layer on the first metal layer and the second metal layer, wherein the first insulation layer and the second insulation layer are formed into the insulation structure.
3. The packaging process according to claim 2, wherein the step (a) further comprises steps:
- forming plural third openings on one side of the semi-package unit to expose the thermal conduction structure, the first conducting terminal and the second conducting terminal;
- forming a second metal re-distribution layer on the first insulation layer, wherein the second metal re-distribution layer is connected with the thermal conduction structure, the first conducting terminal and the second conducting terminal; and
- providing a second carrier and attaching the second carrier on the second metal re-distribution layer.
4. The packaging process according to claim 3, wherein the step (b) further comprises steps of:
- removing a portion of the insulation structure to form the at least one concave disposed on the edge of the semi-package unit.
5. The packaging process according to claim 3, wherein the step (b) further comprises steps:
- removing the second carrier to expose the second metal re-distribution layer;
- forming a third metal layer on the second insulation layer; and
- forming at least one first thin film on a portion of the third metal layer.
6. The packaging process according to claim 5, wherein in the step (c), the third metal layer is covered by the first metal re-distribution layer, wherein the first metal re-distribution layer is connected with the thermal conduction structure, the first metal layer and the second metal layer through the third metal layer.
7. The packaging process according to claim 5, wherein the step (c) further comprises step: removing the first thin film.
8. The packaging process according to claim 5, wherein the step (d) further comprises steps:
- forming plural fourth openings on the second metal re-distribution layer;
- forming a second mask on the second metal re-distribution layer, wherein plural fifth openings are formed on the second mask, wherein a portion of the second metal re-distribution layer is exposed through the plural fifth openings;
- forming a third metal re-distribution layer on the second mask, wherein the third metal re-distribution layer is contacted with a portion of the second metal re-distribution layer; and
- forming a third mask on the third metal re-distribution layer and forming plural sixth openings to expose the third metal re-distribution layer.
9. The packaging process according to claim 2, wherein the step (a) further comprises step: forming plural third openings on one side of the semi-package unit to expose a portion of the thermal conduction structure, the first conducting terminal and the second conducting terminal.
10. The packaging process according to claim 9, wherein the step (b) further comprises steps:
- forming a third metal layer on the second insulation layer to attach the thermal conduction structure, the first metal layer and the second metal layer;
- forming a fourth metal layer on the first insulation layer to attach the thermal conduction structure, the first conducting terminal and the second conducting terminal;
- forming at least one first thin film on a portion of the third metal layer; and
- forming at least one second thin film on a portion of the fourth metal layer.
11. The packaging process according to claim 10, wherein in the step (c), the third metal layer is covered by the first metal re-distribution layer, wherein the first metal re-distribution layer is connected with the thermal conduction structure, a portion of the first metal layer and a portion of the second metal layer through the fourth metal layer.
12. The packaging process according to claim 10, wherein the step (c) further comprises steps:
- forming a second metal re-distribution layer on the first insulation layer, wherein the second metal re-distribution layer is connected with the thermal conduction structure, the first conducting terminal and the second conducting terminal through the corresponding third openings; and
- removing the first thin film to form plural fourth openings and removing the second thin film to form the plural second openings.
13. The packaging process according to claim 10, wherein in the step (c), the thermal conduction structure and the electronic component are disposed between the first metal re-distribution layer and the second metal re-distribution layer.
14. The packaging process according to claim 1, wherein in the step (b), the concave is formed by dicing saw process or laser cavity drilling process.
15. The packaging process according to claim 1, wherein a depth of the concave is 100 μm.
Type: Application
Filed: Mar 19, 2020
Publication Date: Jul 9, 2020
Patent Grant number: 11081461
Inventors: Chien-Ming Chen (Singapore), Beng Beng Lim (Singapore)
Application Number: 16/824,021