Keyboard
Latest Taiwan Semiconductor Co., Ltd. Patents:
- High voltage edge termination structure for power semiconductor devices and manufacturing method thereof
- High voltage edge termination structure for power semiconductor devices and manufacturing method thereof
- Shielded gate trench MOSFET devices
- Shielded gate trench MOSFET devices
- Shielded gate trench MOSFET devices
Description
FIG. 1 is a perspective view of a keyboard showing my new design;
FIG. 2 is a front view thereof;
FIG. 3 is a rear view thereof;
FIG. 4 is a left side elevational view thereof;
FIG. 5 is a right side elevational view thereof;
FIG. 6 is a top plan view thereof; and,
FIG. 7 is a bottom plan view thereof.
Referenced Cited
Patent History
Patent number: D396459
Type: Grant
Filed: Jul 2, 1997
Date of Patent: Jul 28, 1998
Assignee: Taiwan Semiconductor Co., Ltd. (Taipei)
Inventor: Chin-June Lee (Taipei Hsien)
Primary Examiner: Freda Nunn
Law Firm: Bacon & Thomas
Application Number: 0/72,812
Type: Grant
Filed: Jul 2, 1997
Date of Patent: Jul 28, 1998
Assignee: Taiwan Semiconductor Co., Ltd. (Taipei)
Inventor: Chin-June Lee (Taipei Hsien)
Primary Examiner: Freda Nunn
Law Firm: Bacon & Thomas
Application Number: 0/72,812
Classifications
Current U.S. Class:
D14/115
International Classification: 1402;
International Classification: 1402;