Polysilicon-base self-aligned bipolar transistor process and structure

A bipolar transistor isolated by deep recessed oxide 19, with shallow recessed oxide 15 separating the base 32, 37 from collector contact 35, with polysilicon contact 26 to base extrinsic region 37, the polysilicon being self-aligned with the emitter 36 and the emitter contact.

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Description
Patent History
Patent number: T104102
Type: Grant
Filed: Apr 22, 1982
Date of Patent: Apr 3, 1984
Inventors: Allen P. Ho (Poughkeepsie, NY), Cheng T. Horng (San Jose, CA)
Application Number: 6/370,897
Classifications
Current U.S. Class: 357/50; 357/34; 357/59
International Classification: H01L 2704;