Trapezoidal gate FET device
a trapezoidal shaped FET gate structure is disclosed, having a small end juxtaposed with the drain of the device, to reduce the gate-to-drain capacitance and the Miller effect in an active device or to reduce the pinch-off voltage in an FET load device.
Description
Patent History
Patent number: T979006
Type: Grant
Filed: Jun 28, 1978
Date of Patent: Feb 6, 1979
Inventors: Gilbert Hadamard, deceased (LATE OF Manassas, VA), by Denise L. Hadamard, administratrix (St. Jeannet)
Application Number: 5/920,026
Type: Grant
Filed: Jun 28, 1978
Date of Patent: Feb 6, 1979
Inventors: Gilbert Hadamard, deceased (LATE OF Manassas, VA), by Denise L. Hadamard, administratrix (St. Jeannet)
Application Number: 5/920,026
Classifications
Current U.S. Class:
357/23;
357/42;
357/68
International Classification: H01L 2978;
International Classification: H01L 2978;
