Abstract: A human HL-60 lectin having an amino acid sequence different from other known animal lectins is disclosed. This is one member of a class of mammalian lectins extractable in lactose or detergent and specific for beta-D-galactosides (14-beta-gal lectin which contains at least one glycosylation site). Recombinant methods and materials for production of the mammalian 14-beta-gal lectins, especially HL-60 lectin, in a variety of hosts, and methods to utilize the resulting lectins are also described.

Abstract: The present invention provides nucleotide and amino acid sequences that identify and encode a novel expressed chemokine (ADEC) from inflamed adenoid tissue. The present invention also provides for antisense molecules to the nucleotide sequences which encode ADEC, expression vectors for the production of purified ADEC, antibodies capable of binding specifically to ADEC, hybridization probes or oligonucleotides for the detection of ADEC-encoding nucleotide sequences, genetically engineered host cells for the expression of ADEC, diagnostic tests for inflammation or disease based on ADEC-encoding nucleic acid molecules or antibodies capable of binding specifically to ADEC.

Abstract: Functional human factor VIII produced recombinantly is used in the treatment of human beings diagnosed to be deficient in factor VIII coagulant activity. Also provided are DNA isolates and expression vehicles encoding functional human factor VIII, as well as transformed host cells and processes for producing human factor VIII by use of recombinant DNA technology.

Abstract: Erucic acid is produced by enzymatic hydrolysis, the reaction being catalyzed by lipase from Geotrichum candidum or Candida rugosa. Fatty acid substituents having carbon chains shorter than C22 are removed from triglycerides which also contain one or two erucic acid substituents, resulting in a glyceride fraction enriched in erucic acid and a free fatty acid fraction containing the hydrolyzed substituent.

Abstract: The present invention relates to a method of specifically inhibiting the growth of a virus, particularly an animal virus, in a permissive host cell comprising introducing into the host cell a virus-related gene encoding a product capable of interacting with the genome of the infecting virus (or a product encoded therein) in a manner such that the life cycle of the infecting virus is disrupted. The invention also relates to a method of rendering a cell, particularly an animal cell, resistant to viral infection, and to a viral resistant cell.

Abstract: The instant application provides a method of plant transformation in which plant cells are transformed with an aldehyde dehydrogenase gene capable of detoxifying a phytotoxic aldehyde selective agent. Transformed plant cells are cultured in the presence of the phytotoxic aldehyde selective agent to produce transformed shoots which may be regenerated to produce transformed plant cells containing the aldehyde dehydrogenase gene. The aldehyde dehydrogenase gene construct is linked to another gene construct of interest for expression in plant cells, wherein the aldehyde dehydrogenase gene acts as a selectable marker for transgenic plant cells containing the desired gene construct.

Abstract: A method of locating insertion elements (IS elements) or transposons in coryneform bacteria, a positive selection system suitable for the above, the IS elements found in this manner and their use, is disclosed. The method involves:(1) The construction of a non-self-transferrable vector mobilizable from an E. coli mobilizer strain which vector is composed of(a) A DNA segment containing a replicon functional in E. coli,(b) A second DNA segment containing the DNA fragment coding for the mobilization function (Mob site containing the oriT),(c) A third DNA segment which recombines homologously in Gram-positive bacteria and/or contains a replicon functional in coryneform bacteria,(d) A DNA segment from Bacillus subtilis containing the sacB gene,(2) Transfer of this vector by means of conjugative transfer into the coryneform recipient strains,(3) Cultivation of the transconjugants containing the vector in an .about.

Abstract: The present invention provides a recombinant vector for phytolacca antiviral protein isolated from Phytolacca americana L. and a process for preparing transgenic plants transformed therewith. The transgenic plants of the invention were properly transformed with the recombinant vector; PAP was expressed from the transgenic plants in a successful manner; and, virus proliferation was efficiently inhibited by the expressed PAP in the transgenic plants.

Abstract: A method is provided for calcium phosphate transfection of a eukaryotic host cell wherein particles comprising calcium phosphate and a desired nucleic acid are grown to an optimal size and then contacted with the host cell under conditions providing a substantially slower particle growth rate, thereby increasing the host cell's exposure to optimally-sized particles.

Abstract: This invention relates to a method for preparing site-specific mutations in double-stranded plasmid DNA which comprises the steps of (a) double digesting a plasmid having a site A, which contains a target sequence, and sites B and C, which flank site A, with restriction endonucleases A and B to produce fragment I and with restriction endonucleases A and C to produce fragment II, wherein restriction endonuclease A produces a 3' or 5' overhang; (b) denaturating fragments I and II to form a mixture; (c) reannealing the mixture from step (b) to produce parental homoduplex fragments I and II, heteroduplex fragment III, and heteroduplex fragment IV; (d) extending the 3' ends of the heteroduplex fragments; and (e) ligating the heteroduplex fragments to produce the double-stranded plasmid DNA mutant.

Abstract: The invention provides a nitroreductase, obtainable from a bacterium having the following characteristics as exemplified by examples isolated from Escherichia coli B and Bacillus amyloliquifaciens: 1) it is flavoprotein having a molecular weight in the range of 20-60 Kilodaltons; 2) it requires either NADH or NAD(P)H or analogues thereof as a cofactor; 3) it has a Km for NADH or NAD(P)H in the range of 1-100 .mu.M; and 4) it is capable of reducing either or both nitro groups of CB1954 and analogues thereof to a cytotoxic form e.g. the hydroxylamine. The sequence of one such nitroreductase is shown in Seq. ID No. 1. The nitroreductase may be conjugated to a tumor targeting agent such as a monoclonal antibody and used to convert prodrugs into active antitumor agents. Such prodrugs and drugs are also provided.

Abstract: Mycobacteriophage DS6A has been characterized and found to specifically infect all species of the TB complex, without any detectable infection of mycobacteria species other than those of the TB complex. DNA sequence analysis revealed several potential open reading frames, including one encoding a protein analogous to gp37 of mycobacteriophage L5 and a second encoding a protein with significant homology to the S. coelicolor DNA polymerase .beta. subunit. Based on the DNA sequence analysis, cloning sites can be identified for insertion of reporter genes, making DS6A useful as a reporter phage for specific detection and identification of species of the TB complex.

Abstract: The present invention relates to compositions for the diagnosis, prevention and treatment of tumor progression. Novel nucleic acid molecules are identified that are expressed at higher levels in benign (e.g., non-malignant) tumor cells compared to malignant tumor cells exhibiting a high metastatic potential. The nucleic acids and cells including these nucleic acids can be used diagnostically or for therapeutic intervention.

Abstract: A biochemically defined culture medium for culturing engineered Chinese hamster ovary (CHO) cell lines, which is essentially free from protein, lipid and carbohydrate isolated from an animal source, having water, an osmolality regulator, a buffer, an energy source, amino acids including L-glutamine, an inorganic or recombinant iron source, and a synthetic or recombinant growth factor, and optionally non-ferrous metal ions vitamins and cofactors. Also cells adapted to grow in such a culture medium.

Abstract: Organic waste disposal treatment apparatus includes a treatment chamber assembly in which a compost bed may be formed, an inlet to the treatment chamber assembly through which organic waste may be added to a compost bed in the treatment chamber assembly, ventilation means for promoting aerobic digestion of the compost bed in the treatment chamber assembly, drainage means for preventing waste material in the treatment chamber assembly from becoming anaerobic and access means for accessing and removal of compost formed in the treatment chamber assembly. The treatment chamber assembly includes a holding tank formed of plastics material, the access means includes a closed conveyor for conveying compost from the lower zone of the compost bed. The treatment chamber assembly may include an air permeable division for diving a duct from the compost bed. It is also preferred that the holding tank be partially filled with an active bed of compost.

Abstract: The present invention relates to the aerobic reaction of compounds such as aromatic, nitro-aromatic, halo-aromatic, aliphatic and halo-aliphatic compounds with a microorganism, the microorganism being a member of the group consisting of microorganisms having ATCC Accession No. 55641, 55642, 55643, 55644, 55645, 55646, 55647, 55648 and 55649. More particularly, the present invention relates to the aerobic degradation of organic compounds in fluid or solid phase such that the compounds are bioremediated to products containing CO.sub.2 and H.sub.2 O.

Abstract: A process for producing a polypeptide of interest from fermentation of bacterial host cells comprising nucleic acid encoding the polypeptide is provided. In this method, the host cells employed have an inactivated electron transport chain. Further provided is a method for determining if a particular bacterial cell culture has a propensity for dissolved oxygen instability when fermented on a large scale.

Abstract: In high volume laboratory analysis of patient medical specimens, control materials are inserted at periodical intervals (e.g. once per eight hours) and analyzed. If the results of the analysis deviate from the mean according to statistical rules, the run of analyses prior to the insertion of control materials has in the past been rejected, often causing a substantial loss of results because the control materials were not inserted sufficiently frequently. According to the invention the patient mean of a test is determined, and when the mean deviates from the predetermined mean by more than a selected amount, this determination is used, not to reject the run, but rather to trigger insertion and analysis of control materials. If the analysis of control materials shows that the run is in control, the analyses made prior thereto are reported and the run is resumed. If the control material analysis shows that the run is out of control, then the prior analyses are rejected.

Abstract: Methods for blood sample preparation using reagent compositions which include a zwitterionic surfactant for sphering of cells to eliminate orientational noise. When the reagent composition including a dye for staining a subset of cells is reacted with a blood sample, and the reaction mixture is passed through the sensing region of a flow cytometer, the light scattered and absorbed by each cell is measured, the stained cells can be distinguished from the unstained cells, and when the cells are reticulocytes and mature erythrocytes, respectively, the volume and hemoglobin concentration of each reticulocyte or erythrocyte, and the hemoglobin content, mean cell volume, mean corpuscular hemoglobin concentration, and mean cell hemoglobin of the reticulocytes or erythrocytes are calculated from the measured cell-by-cell volume and hemoglobin concentration.

Abstract: continuous flow analysis system measures the cholesterol distribution among different lipoprotein classes in a blood sample. A blood plasma sample is separated into different lipoprotein classes by single vertical spin density gradient ultracentrifugation. The sample is then introduced in a continuous succession into a reagent stream which flows continuously through a detector. A sensor detects the end of the sample in a sample stream before it is introduced into said reagent stream. A wash solution is introduced into the sample stream in response to detection of the end of said sample. The wash solution back flows through the sample stream into the sample container to wash any residue and/or air bubbles from the sample stream. After a predetermined time period, the sample stream is closed and the process is repeated for the next sample.

Abstract: A method of determining the total carbon dioxide concentration in plasma (TCO.sub.2 plasma) directly from a whole blood sample involves adjusting total carbon dioxide concentration measured in the whole blood sample (TCO.sub.2 whole blood) using a volume dilution factor (VDF) to give a value that is equivalent to TCO.sub.2 plasma.

Abstract: A method and apparatus for the chemiluminescent determination of NO/NO.sub.x in a sample gas is disclosed in which the NO.sub.x portion of the gas stream is catalytically converted in a preconditioned vitreous carbon bed at a relatively low temperature effective to catalytically convert NO.sub.x to NO and below 200.degree. C. The vitreous carbon is preconditioned by heating at a temperature of between 300.degree. C. and about 500.degree. C. for a sufficient period of time, on the order of two to five hours. The apparatus consists of a converter containing the preconditioned vitreous carbon in communication with a reaction cell consisting of a hollow cylindrical housing having an open end closed by an optical filter. A suitable photodetecter is disposed to detect light emitted through the optical filter. A chemiluminescent reaction between ozone and NO in the sample stream occurs in a reaction chamber defined by the interior of the housing. A reflector element may be disposed in the reaction chamber.

Abstract: A method and apparatus for ion analysis by ion chromatography uses periodic electrolytic regeneration of a packed bed suppressor. First and second sets of columns, suppressors and detectors connected in series are linked by appropriate valving so that the effluent from the second suppressor can be passed to the first suppressor to be used in the electrolytic regeneration of the first suppressor after detection of analyte in the second detector.

Abstract: A method is provided for analyzing an impurity on a semiconductor substrate. In this method, those to-be-measured areas on a surface of a semiconductor substrate are exposed with an ultraviolet radiation to provide corresponding oxide films. By doing so, an impurity is trapped in the oxide film at each area of the semiconductor substrate. The surface of the semiconductor substrate is cleaned with an acid solution to remove an impurity on other than the areas on the surface of the semiconductor substrate. The surface of the semiconductor substrate is exposed with a hydrofluoric acid vapor to dissolve the oxide films into very fine droplets containing an impurity. These droplets are moved on the surface of the semiconductor substrate to collect these droplets into a drop on the surface of the semiconductor substrate. The impurity in the drop is measured by a known chemical spectrometer.

Abstract: A method for detecting wafer defects, comprising the steps of: forming dummy dies useful as an alignment mark at edge portions of a flat wafer, the edge portions having no pattern die; loading the wafer in a defect detecting apparatus; arranging the edge portions of the dummy dies; inspecting the wafer for defects to give data for the defects; and carrying out subsequent processes, according to which the detected defects are utilized to inspect for process defects at subsequent process steps, which makes it easy to monitor organic relations between the wafer defects and the process defects and between the process defects themselves.

Abstract: A new-type silicon material is produced by hydrogen ion implantation and subsequent annealing, the annealing being preferably in two steps. The present invention raises surface mobility of a silicon wafer and produces a buried high-resistivity layer beneath a silicon surface layer. The resulting products are particularly useful for the improvement of yield and speed and radiation hardness of very large scale integrated circuits.

Abstract: A liquid crystal display device is produced by effecting in the course of its production steps a resist-peeling method including the steps of (a) changing the quality of a resist layer on a substrate, (b) contacting the changed resist with a liquid containing 2-amino-1-ethanol, and (c) removing the liquid containing the thus peeled resist from the surface of the etched resist, and optionally, (d) regenerating a liquid containing 2-amino-1-ethanol by distillation from the liquid used in step (c) and reusing the regenerated liquid in step (b).

Abstract: A semiconductor substrate is utilized to integrally form a drive circuit and a pixel array to produce a transparent semiconductor device for a light valve comprising a pixel array region and a drive circuit region on a major face of the semiconductor substrate. A stopper film is formed on the major face of the semiconductor substrate at the pixel array region, and a pixel array is formed over the silicon oxide stopper film. A drive circuit is formed on the drive circuit region, and silicon oxide posts are embedded in the major face of the semiconductor substrate at the drive circuit region. A thickness of the semiconductor substrate is then selectively removed from a back face opposite to the major face thereof to reach the stopper film. After the selective removing step, the portion of the semiconductor substrate under the pixel region is completely removed while a portion of the semiconductor substrate under the drive circuit region remains.

Abstract: A PMOS device is provided having a diffusion barrier placed within the polysilicon gate. The diffusion barrier is purposefully deposited to a concentration peak density within the gate which is deeper than subsequently placed impurity dopant. The barrier comprises germanium atoms placed in fairly close proximity to one another within the gate conductor, and the impurity dopant comprises an ionized compound of BF.sub.2 subsequently placed as boron within the gate and source/drain region, at least a majority and preferably greater than eighty percent of which are placed shallower within the gate than the germanium atoms. The barrier region substantially prevents or retards penetration of boron atoms through the gate oxide and into the channel region. Thus, the barrier helps prevent change in channel concentration and problems associated with boron penetration such as flatband voltage (Vfb) and threshold voltage (Vth) shift.

Abstract: A semiconductor device is described, incorporating electron traps at the interface between a semiconductor substrate and a gate dielectric layer of an insulated gate field effect transistor, such device being capable of retaining charge in the electron traps for a certain time, allowing volatile memory circuits to be produced wherein each cell occupies only the area required for a single transistor.

Abstract: A heterojunction bipolar transistor. An active region is defined on a silicon collector layer. A silicon-germanium base layer characterized by an integral polycrystalline and epitaxial structure is deposited over the collector such that the epitaxial portion of the base covers substantially the entire active region of the collector. In one version, a field oxide region separates the polycrystalline part of the base layer from the remainder of the collector layer. Alternatively, the collector layer is also characterized by an integral polycrystalline and epitaxial structure; in this version the epitaxial part of the base overlies the epitaxial part of the collector.

Abstract: A method of fabricating a vertical conductive region in a semiconductor device in which plural epitaxial layers are successively grown on a substrate and a dopant is implanted into each epitaxial layer before growing the next layer. A fast vertical transistor operable in the GHz range and at high voltage (e.g., more than about 10 volts) is fabricated by growing plural epitaxial layers, each with a thickness less than about 2.5 microns until the desired height of the vertical conductive region is reached. Sections of the transistor's collector and an adjacent sinker are implanted through each epitaxial layer before the next layer is grown. Annealing after ion implant joins the sinker and collector sections in each layer with the corresponding sinker and collector sections in adjacent layers to form unitary structures in the transistor. Each layer is thin enough for the dopant to penetrate to the bottom of the layer using conventional implant energy.

Abstract: A fabrication method that enables to realize a semiconductor integrated circuit device having capacitors, bipolar transistors and IGFETs at a lower fabrication cost and a higher fabrication yield than the case of the conventional ones. After a first patterned conductor film having contours of first capacitor electrodes and of base electrodes is formed, a first patterned insulator film is formed on the first capacitor electrodes to produce first dielectrics A second patterned conductor film having contours of second capacitor electrodes and of gate electrodes is then formed on the first capacitor electrodes and the gate insulators. A second patterned insulator film is formed on the second capacitor electrodes to produce second dielectrics. A third patterned conductor film having contours of third capacitor electrodes and of emitter electrodes is formed on the second dielectrics, the base regions and source/drain regions.

Abstract: Variations in the individual liquid crystal cells and cross-talk between adjacent pixels are reduced, stable operation is maintained and the aperture and the S/N ratio are increased by providing a transistor and an interconnection layer therefor on one surface of an insulating layer while providing an electrode for applying a voltage to a liquid crystal on the other surface thereof. One major electrode portion of the transistor and the liquid crystal voltage applying electrode are connected to each other using an electrode via an opening. Also, the electrode for connecting the major electrode portion 3 to the liquid crystal voltage applying electrode is provided on the other surface of the insulating layer such that it shield the transistor from light.

Abstract: A HIGFET having a gate pad situated over a non conducting portion of the channel layer of the heterostructure wafer. The method of producing this device involves application of a very thin layer of gate metal on the wafer to protect the wafer surface during further processing. A photoresist coating is formed over the active area of the channel layer of the FET. An ion isolation implantation is applied to the wafer resulting in a non conducting portion of the channel layer that is not covered by the photoresist layer. The photoresist layer is removed and a thick layer of gate metal is applied on the thin layer of gate metal. The gate layers are fashioned into a pad over the non conducting portion of the channel layer and at least one finger over the conducting portion of the channel layer, resulting in the gate having minimized parasitic gate capacitance.

Abstract: A semiconductor memory device effectively prevents formation of a gate bird's beak oxide film at a region through which electrons move in data writing and erasing operations. In the semiconductor memory device, nitride films having a thickness larger than that of a first gate oxide film are formed on a drain impurity diffusion layer and a source impurity diffusion layer to surround the first gate oxide film. A floating gate electrode has opposite ends protruded over the nitride films.

Abstract: An improved contactless EPROM array, EPROM cell design, and method for fabricating the same is based on a unique drain-source-drain configuration, in which a single source diffusion is shared by two columns of transistors. An elongated first drain diffusion region, an elongated source diffusion region, and an elongated second drain diffusion region, are formed in a semi-conductor substrate along essentially parallel lines. Field oxide regions are grown on opposite sides of the first and second drain diffusion regions. Floating gates and control gate wordlines are formed orthogonal to the drain-source-drain structure to establish two columns of storage cells having a shared source region. The shared source region is coupled through a bottom block select transistor to a virtual ground terminal. Each drain diffusion region is coupled through a top block select transistor to global bitline.

Abstract: A process for fabricating a non-volatile memory cell (10) in a semiconductor device includes the formation of a doped region (28) in a semiconductor substrate (40) underlying a floating gate electrode (16) and separated therefrom by a tunnel dielectric layer (44). Stress induced failure of the tunnel dielectric layer (44) is avoided by laterally diffusing dopant atoms under the floating gate electrode (16) after completely fabricating both the floating gate electrode (16) and the underlying tunnel dielectric layer (44).

Abstract: A process for fabricating memory cells of a read-only memory (ROM) device is disclosed. First, a gate oxide layer, a first polysilicon layer, and a first silicide layer are formed subsequently on the surface of a silicon substrate. The layers are patterned to form parallel strip-shaped configurations extending along a first direction on the surface of the silicon substrate. Next, impurities are implanted into the surface of the substrate in the areas between the strip-shaped configurations thereby constituting buried bit lines of the memory cells. Sidewall spacers are then formed on the sidewalls of the strip-shaped configurations. A second silicide layer is then formed over the exposed surface of the buried bit lines in a self-aligned process, thereby improving the electrical conductivity of the buried bit lines. After that, the portions of the second silicide layer and the first polysilicon layer covering the coding region of the memory cells are removed.

Abstract: A method of manufacturing a semiconductor device includes forming a first insulating layer on a major surface of a semiconductor substrate. The first insulating layer has an opening located at a predetermined position on and reaching the major surface of the substrate. A first conductive layer is formed in the opening and in contact with the surface of the first insulating layer. A second insulating layer is formed on a predetermined region of the first conductive layer. A second conductive layer is formed to cover at least the second insulating layer. The second conductive layer is removed from at least an upper surface of the second insulating layer to expose the upper surface thereof. The exposed upper surface of the second insulating layer is etched to partially remove a predetermined thickness of the second insulating layer. The second conductive layer is sputter-etched with inert gas to substantially round the tip and flatten a side surface thereof.

Abstract: The antifuse structure of the present invention includes a bottom planarized electrode, an ILD disposed over the bottom electrode, an antifuse cell opening in and through the ILD exposing the bottom electrode, a first barrier metal layer disposed by means of collimated sputter deposition in the antifuse cell opening to form a layer of uniform thickness existing only within the antifuse cell opening in order to protect the antifuse material layer from diffusion from the bottom electrode and to form an effective bottom electrode of reduced area, hence reducing the capacitance of the device, an antifuse material layer disposed in the antifuse cell opening and over the first barrier metal layer, a second barrier metal layer disposed over the antifuse material layer and optionally formed by collimated sputter deposition, and a top electrode disposed over the second barrier metal layer.

Abstract: Disclosed is a semiconductor device in which dummy regions which are lower than an isolated element region are formed around the isolated element region. Another dummy region which has a height nearly equal to those of element regions may be formed at a non-element-region-existing region, accompanying with lower dummy regions. The method for making the semiconductor device has the steps of suitably forming the element regions and dummy regions on a insulating layer on a substrate, depositing a insulator on the entire surface of the insulating layer and polishing the insulator to obtain a plane surface.

Abstract: A method for minimizing the impurity encroachment effect of field isolation structures for NMOS, PMOS and CMOS integrated circuits is disclosed. In the process, a polysilicon layer is deposited on a laminate comprising a substrate having thereon a pad oxide, and the stacked layers on the pad oxide. An overhang layer is deposited on the polysilicon layer, and a photo-resist mask which masks the active regions is then applied so as to remove the unmasked overhang layer and the unmasked polysilicon layer. The resultant structure is isotropically etched to partially undercut the vertical portions of the polysilicon layer under the overhang layer so as to form an overhang. The photo-resist is stripped, and the stacked layers not covered by the overhang layer are etched anisotropically. The channel-stop ions are implanted, and the overhang layer is removed.

Abstract: An epitaxial growth system comprises a housing around an epitaxial growth chamber. A substrate support is located within the growth chamber. A gallium source introduces gallium into the growth chamber and directs the gallium towards the substrate. An activated nitrogen source introduces activated nitrogen into the growth chamber and directs the activated nitrogen towards the substrate. The activated nitrogen comprises ionic nitrogen species and atomic nitrogen species. An external magnet and/or an exit aperture control the amount of atomic nitrogen species and ionic nitrogen species reaching the substrate.

Abstract: Heteroepitaxial growth of phosphorus-containing III/V semiconductor material (e.g., InGaAsP) on a non-planar surface of a different phosphorus-containing III/V semiconductor material (e.g., InP) is facilitated by heating the non-planar surface in a substantially evacuated chamber to a mass-transport temperature, and exposing the surface to a flux of at least phosphorus form a solid phosphorus source. This mass-transport step is followed by in situ growth of the desired semiconductor material, with at least an initial portion of the growth being done at a first growth temperature that is not greater than the mass transport temperature. Growth typically is completed at a second growth temperature higher than the first growth temperature. A significant aspect of the method is provision of the required fluxes (e.g., phosphorus, arsenic, indium, gallium) from solid sources, resulting in hydrogen-free mass transport and growth, which can be carried out at lower temperatures than is customary in the prior art.

Abstract: A low temperature ion-beam assisted deposition process, comprising the steps of cleaning at least one substrate, subjecting the substrate to a vacuum of at least 2.times.10.sup.-4 Torr, heating the substrate to a temperature of at least 280.degree. C., and directing an ion beam at the substrate, wherein the ion beam comprises ion-associated gas molecules of Si or Ge, so as to grow a thin epitaxial film of Si or Ge on the substrate.

Abstract: A method of laser planarizing metallic thin films minimizes the laser fluences required to melt or nearly melt the metalization. This is accomplished by reducing the optical reflectivity of the metallic lines and vias by using textured thin films. This reduction of optical reflectivity, in turn, reduces the minimum fluence needed to melt or nearly melt the metal using a laser, thus improving the process window and minimizing the damage to the surrounding media.

Abstract: A method is provided for forming an improved landing pad with barrier of a semiconductor integrated circuit, and an integrated circuit formed according to the same. An opening is formed through a first dielectric layer to expose a portion of a diffused region. A landing pad is formed over the first dielectric layer and in the opening. The landing pad preferably comprises a silicide layer disposed over a barrier layer which is disposed over a polysilicon layer. The landing pad will provide for smaller geometries and meet stringent design rules such as that for contact space to gate. The barrier layer, formed as part of the landing pad, will provide for a uniform and high integrity barrier layer between the diffused region and an overlying aluminum contact to prevent junction spiking. A second dielectric having an opening therethrough is formed over the landing pad. A conductive contact, such as aluminum, is formed in the contact opening.

Abstract: A new method of metallization using a new design of metal contact shape, contact/via profile, and metal lines having considerably reduced current density and improved electromigration of metal lines is achieved. Metal contacts are formed in a rectangular shape instead of a square shape with the wider side perpendicular to the current direction. Contact openings are made having concavo-concave profiles which can provide a wider conducting cross-sectional area than can conventional openings with a vertical profile near the contact bottom. Gaps are formed within wide and high current metal lines so that current density can be effectively lowered by utilizing the whole metal line uniformly.

Abstract: A new method of metallization using a new design of metal contact shape, contact/via profile, and metal lines having considerably reduced current density and improved electromigration of metal lines is achieved. Metal contacts are formed in a rectangular shape instead of a square shape with the wider side perpendicular to the current direction. Contact openings are made having concavo-concave profiles which can provide a wider conducting cross-sectional area than can conventional openings with a vertical profile near the contact bottom. Gaps are formed within wide and high current metal lines so that current density can be effectively lowered by utilizing the whole metal line uniformly.