Abstract: A device for stabilizing boats and other water craft that is generally blade-shaped and attaches to the body or hull of the boat. The stabilizing device projects generally outwardly and downwardly from the boat and is pivotally connected along the vertical axis at the attachment point to the water craft. The device improves the stability of the boat and resists unwanted drift either from a stationary position or from a desired heading.

Abstract: The invention relates to a rudder for sea vessels, consisting of a main rudder and a fin which is coupled thereto by means of a vertical piston (15), restrictively guided by the main rudder and provided with a horizontal piston (11) The vertical piston (15) and the horizontal piston (11) are connected to each other via a hinge bolt to form a sliding pivoting piston coupling (100) and a bearing housing (16) of the vertical piston (15) is fixed to the hull of the vessel. In order to reduce the forces acting upon the sliding bearing of the vertical coupling bolt and horizontal pivoting bolt in addition to the hinge bolts connecting said bolts, the vertical piston (15) is supported by an additional counter bearing (27) on the hull of the vessel.

Abstract: In a production method for producing a compound semiconductor single crystal by LEC method using a crystal growth apparatus with a double crucible structure, it was made to grow up a crystal by covering the second crucible with a plate-like member having a pass-through slot for being capable of introducing a crystal pulling-up shaft having a seed crystal holding part at a tip into the second crucible and creating a state where an atmosphere within the second crucible scarcely changes (a semi-sealed structure).

Abstract: This invention provides a high purity silica crucible having low impurity concentration in its inner portion, and its production method. The crucible, in which at least each content of Na and Li being contained in the depth of 1 mm from the inside surface is less than 0.05 ppm, is given by a production method of a high purity silica glass crucible, wherein a purity of the melted silica powder layer is increased by applying a voltage between a mold and an arc electrode to move impurity metals being contained in the melted silica glass layer to the outside, when the silica crucible is produced by arc plasma heating a raw material powder of silica in an inside surface of a hollow rotary mold. The method comprises, keeping an arc electrode potential of within ±500 V during an arc melting, applying a voltage of from ?1000 V to ?20000 V to a mold being insulated to the ground, and applying a high voltage to the un-melted silica powder layer of the outside.

Abstract: A diamond has a pavilion (22) with a plurality of facets (32) disposed from a girdle (26) to a culet (34). A dome-shaped crown (24) is disposed above the girdle. The dome-shaped crown has a plurality of rows of facets (40, 42) cut with a plurality of monotonically decreasing angles to form a stepped contour from the girdle to an apex of the dome-shaped crown. A star-shaped top-center facet is disposed at the apex of the crown. The facets of the pavilion are symmetrically disposed and extend continuous from the girdle to the culet. The plurality of sets of facets in the crown from the girdle to the apex of the crown are cut with monotonically decreasing angles, such as 90, 75, 65, 55, 45, 35, 30, 25, 20, 15, and 10 degrees, respectively.

Abstract: A method and a device to grow from the vapor phase, a single crystal of either SiC, a group III-nitride, or alloys thereof, at a growth rate and for a period of time sufficient to produce a crystal of preferably several centimeters length. The diameter of the growing crystal may be controlled. To prevent the formation of undesirable polycrystalline deposits on surfaces in the downstream vicinity of the single crystal growth area, the local supersaturation of at least one component of the material grown is lowered by introducing a separate gas flow comprising at least one halogen element or a combination of said halogen and hydrogen species.

Abstract: A semiconductor laser, a semiconductor device and a nitride series III-V group compound substrate capable of obtaining a crystal growth layer with less fluctuation of the crystallographic axes and capable of improving the device characteristics, as well as a manufacturing method therefor are provided. The semiconductor laser comprises, on one surface of a substrate used for growing, a plurality of spaced apart seed crystal layers and an n-side contact layer having a lateral growing region which is grown on the basis of the plurality of seed crystal layers. The seed crystal layer is formed in that a product of width w1 (unit: ?m) at the boundary thereof relative to the n-side contact layer along the arranging direction A and a thickness t1 (unit: ?m) along the direction of laminating the n-side contact layer is 15 or less. This can decrease the fluctuation of the crystallographic axes in the n-side contact layer.

Abstract: A process for forming a polycrystalline silicon layer includes the following steps. Firstly, at least one seed is formed on a substrate. Then, an amorphous silicon layer is formed on the substrate and overlies the seed. Then, the amorphous silicon layer is irradiated with a laser to melt the amorphous silicon layer. Afterward, the molten amorphous silicon layer is recrystallized to form a polycrystalline silicon layer.

Abstract: Silicon nanocrystals with chemically accessible surfaces are produced in solution in high yield. Silicon tetrahalide such as silicon tetrachloride (SiCl4) can be reduced in organic solvents, such as 1,2-dimethoxyethane(glyme), with soluble reducing agents, such as sodium naphthalenide, to give halide-terminated (e.g., chloride-terminated) silicon nanocrystals, which can then be easily functionalized with alkyl lithium, Grignard or other reagents to give easily processed silicon nanocrystals with an air and moisture stable surface. The synthesis can be used to prepare alkyl-terminated nanocrystals at ambient temperature and pressure in high yield. The two-step process allows a wide range of surface functionality.

Abstract: To suppress a fluctuation in resistivity around a target value to thereby stably manufacture high resistivity silicon single crystals having almost the same resistivity values in a manufacturing method wherein a silicon raw material is molten to manufacture a high resistivity silicon single crystal in the range of from 100 to 2000 ? cm with a CZ method. In a case where poly-silicon produced with a Siemens method using trichlorosilane as raw material is used as the silicon raw material, an impurity concentration in the silicon raw material is selected so as to be controlled in the range of from ?5 to 50 ppta method in terms of (a donor concentration—an acceptor concentration) and the selected poly-silicon is used. In a case of a MCZ method, the poly-silicon is selected in the range of from ?25 to 20 ppta and the selected poly-silicon is used. Instead of the raw material, poly-silicon produced with a Siemens method using monosilane as raw material is used.

Abstract: An assembly for vaporizing raw materials in order to prepare vapor deposited phosphor materials comprises a crucible provided with two plates or covers, wherein one thereof is an outermost plate or cover provided with a perforation pattern, selected from the group consisting of one or more slits, in series or in parallel, and of openings having same or different diameter, randomly or regularly distributed over said cover, moreover covering said crucible having a bottom and surrounding side walls with a height “h” and wherein said crucible contains raw materials, is characterized in that a second plate is mounted internally in the crucible at a distance from said outermost cover plate being less than ? of said side wall height “h”.

Abstract: A chemical vapor deposited, ? phase polycrystalline silicon carbide having a high thermal conductivity and reduced stacking faults. The silicon carbide is synthesized under specific conditions using hydrogen gas and methyltrichlorosilane gas as reactants. The thermal conductivity of the silicon carbide is sufficiently high such that it can be employed as parts of apparatus and components of electrical devices where a high heat load is generated. Such components may include active thermoelectric coolers, heat sinks and fans.

Abstract: A coating apparatus is described for coating the surface of a center or core of chewing gum with a sugarcoated layer. The apparatus includes a cylindrical fixed tub having a bottom and an inner fixed circumferential wall. A rotating plate is mounted on the bottom of the fixed tub so as to be coaxial with the fixed tub. The surfaces of the rotating plate and the fixed tub are determined to allow the smooth transfer of the gum centers from the rotating plate to the inner fixed circumferential wall of the fixed tub. The inner fixed circumferential wall of the fixed tub is configured with ridges so as to reduce the tendency of the gum centers to adhere to the wall and to increase the coating area and the drying area of the gum centers.

Abstract: A method and apparatus for applying contacts to a semiconductor substrate, comprising one or more applicator rolls. Each applicator roll comprises a printing surface which has at least one raised pattern surface. Each raised first pattern surface is positioned such that upon rotation of the first rotatable applicator roll, it passes through a printing space. As a result, a surface of a semiconductor substrate passing through the printing space while the raised pattern surface(s) is covered with a conductive ink and the applicator roll is being rotated comes into contact with the conductive ink on at least part of the raised pattern surface, and does not come into contact with conductive ink on substantially any of the printing surface other than the raised pattern surface. Accordingly, a conductive ink pattern is deposited on the semiconductor substrate surface. In a preferred aspect, the conductive ink is a hot melt ink.

Abstract: The invention relates to an adhesive transfer roller (1) of an adhesive application device, preferably in a tube extruding machine, to transfer adhesive to a sizing roller, whereby the adhesive transfer roller (1) is mounted with bearings in lever arms (6, 10) so that it can rotate, it being possible to use these lever arms (6, 10) so that the adhesive transfer roller (1) can be moved toward and away from the sizing roller and whereby the lever arms (6, 10) are mounted so that they can rotate in the machine frame, beyond the side walls (2) of which the adhesive transfer roller (1) extends. The invention is characterized in that the bearings (5), with which the adhesive transfer roller (1) is mounted in the lever arms (6, 10), are accessible from the outside of the machine frame side walls (2).

Abstract: A dispensing system and method for dispensing material onto a substrate. The dispensing system includes a frame, a support, coupled to the frame, that supports the substrate at a dispensing position in the dispensing system, and a dispensing head, coupled to the frame, that dispenses the material onto the substrate. The dispensing head includes a motor unit having a first motor coupled to an output drive mechanism, and a dispensing unit, removably coupled to the motor unit, having a material outlet from which the dispensing material is dispensed, the dispensing unit having a dispensing mechanism coupled to the material outlet and coupled to the output drive mechanism of the motor unit such that operation of the first motor causes the dispensing mechanism to dispense material through the outlet.

Abstract: The machine (4) operates continuously and is a single unit having a prismatic construction and a body with an upper base that incorporates a large rotary platen (1), a number of workstations (5) that are placed in said platen and are provided with diametrically opposite curling and sealing compound lining devices (6) and (7), one or more sets of feeding (8) and discharge (9) devices and common actuation means for these stations (5), internal to the machine (4), which machine may operate with any lids (2) or bases of any profile, adapting to any shape of these by rotating the lids (2) in the workstations (5).

Abstract: An apparatus for the forming a covering on surfaces of solid bodies in a coating chamber. The covering is homogeneous and has a constant layer thickness on the surface of the solid bodies while being flexible for use of different liquids including solid materials. A liquid including solid materials is fed to a surface rotating about an axis of rotation, or a surface area of a rotating member. Channel and/or nozzle members forming liquid droplets are arranged on a radially outer edge area of the rotating member.

Abstract: Device for cleaning a powder coating booth and powder coating booth with cleaning device. The device for cleaning a powder coating booth is provided with a first air distribution batten arranged on the floor of the powder coating booth. Also provided is a second air distribution batten arranged on a side of the powder coating booth and a suction channel with a suction slot for sucking excess powder out of the booth. The first and the second air distribution batten are provided in order to blow excess powder in the direction of the suction slot.

Abstract: During displacement relative to a substrate 1, a coating die head emits coating liquid out of a slot 12a to a surface of the substrate. The coating die head includes a lip 12b having a lip surface 12b and a side having a side surface 12c. A contact angle of the surface 12c with respect to the coating liquid is greater than a contact angle of the surface 12b with respect to the coating liquid. This configuration enhances stabilization of bead of the coating liquid during application process of the coating liquid, preventing stripes and steps from appearing in the coating layer. This coating die head makes it possible to carry out high precision coating required for fabrication of color filters for liquid crystal displays.

Abstract: A device for wetting cable-ends includes a stand supporting a control, a bath-container with a bath, and a conveyor unit for conveying to the cable-end a wetting agent which forms the bath. The conveyor unit has a drive, a pump unit, a conveyor-pipe, and a nozzle with throttle. The pump unit conveys the wetting agent through the conveyor pipe to the nozzle with the wetting agent flowing through an exchangeable throttle that determines the shape and size of the free jet of the wetting agent.

Abstract: A microdeposition system (20) and method deposits precise amounts of fluid material onto a substrate. A microdeposition head (50) includes a plurality of spaced nozzles that fire droplets having a deposited width when deposited on the substrate. A positioning device moves the microdeposition head (50) relative to the substrate at a head speed. A controller (22) generates over-clocking signals at a rate that is substantially greater than the head speed divided by the droplet width to improve resolution. The controller (22) includes a positioning module that generates position control signals for the positioning device. The controller (22) includes a nozzle firing module (114) that generates nozzle firing commands based on the over-clocking rate to fire the nozzles to form droplets that define features on the substrate.

Abstract: A film-forming apparatus of the invention is a film-forming apparatus that includes: a processing container that defines a chamber, a pedestal arranged in the chamber, on which a substrate to be processed can be placed, a showerhead provided opposite to the pedestal, which has a large number of gas-discharging holes, a gas-supplying mechanism that supplies a process gas into the chamber through the showerhead, and a showerhead-temperature controlling unit that controls a temperature of the showerhead.

Abstract: A thermal spraying method and thermal spraying system of the present invention jets thermal spraying powder supplied from a feeder through a connecting conduit by softening or melting the thermal spraying powder using a thermal spraying machine. By setting the internal atmosphere in the connecting conduit to a negative pressure relative to the atmosphere near the intake end of the connecting conduit, the thermal spraying powder stored in the feeder is suctioned into the intake end of the connecting conduit. The thermal spraying powder suctioned into the intake end of the connecting conduit is carried to the discharge end of the connecting conduit, introduced inside a cylindrical air flow jetted from the nozzle provided in the thermal spraying machine or introduced into a combustion chamber provided in the thermal spraying machine or into the jet nozzle, softened or melted and jetted out.

Abstract: A chemical vapor deposition (CVD) system and method for applying an aluminide coating constituted by two or more extrinsic metal components on a jet engine component. The aluminide coating is capable of forming a protective complex oxide upon subsequent heating in an oxidizing environment. At least one of the extrinsic metals in the aluminide coating is provided as a first vapor phase reactant from a receptacle coupled by a closed communication path with the reaction chamber of the CVD system and free of a carrier gas. The aluminide coating is formed by the chemical combination of the first vapor phase reactant with a second vapor phase reactant either created in situ in the reaction chamber or supplied by a carrier gas to the reaction chamber from a precursor source.

Abstract: An apparatus for depositing a thin film includes a reaction chamber, a reaction gas provider to supply a reaction gas and/or inert gas to the reaction chamber, an oxidant provider to supply a first oxidant and a second oxidant to the reaction chamber, and an air drain to exhaust gas from the apparatus. The oxidant provider is operable to supply the second oxidant to the reaction chamber using the first oxidant as a transfer gas.

Abstract: A gas supplying apparatus for atomic layer deposition, which generates a source gas by vaporizing a powder source and supplies the source gas into a reaction chamber of an atomic layer deposition apparatus, is provided.

Abstract: A reactant supply apparatus comprises a vessel with a gas inlet and a gas outlet. Gas lines are connected to the gas inlet or the gas outlet. A plurality of components are positioned along the gas lines. A first heating device is provided for heating the vessel. Apparatus and methods are provided for biasing the temperature of at least one of the plurality of components to a temperature higher than the vessel.

Abstract: A plasma reactor and accompanying method for thin film deposition is disclosed, comprising a system of input means and exhaust means that produce an adjustable spiral flow of precursor gas used in creating a spatially stable plasma over large substrate surface areas. The flow of gas created by this configuration of input and exhaust means results in a plasma that remains uniform as it extends radially from the center to the edges of the substrate and is capable of high quality depositions and high deposition rates. In a preferred embodiment, the input means is in the form of a ring jet with a tangential flow component surrounding the substrate. Gas exhausts through exhaust means located at a preselected distance above the substrate. In a preferred embodiment, gas exhausts through a central exhaust aperture and a number of surrounding apertures located at a preselected distance from the central exhaust aperture.

Abstract: A showerhead assembly of an apparatus for manufacturing a semiconductor device includes a backing plate having a gas inlet, a showerhead combined with the backing plate at an end portion thereof, wherein the showerhead has a plurality of holes, and a sub heater equipped at a peripheral portion of the showerhead.

Abstract: The invention concerns a method for modifying a source material used in an ALD process, a method for depositing transition metal nitride thin films by an ALD process and apparatus for use in such process. According to the present invention, transition metal source materials are reduced by vaporizing a metal source material, conducting the vaporized metal source material into a reducing zone comprising a solid reducing agent maintained at an elevated temperature. Thereafter, the metal source material is contacted with the solid or liquid reducing agent in order to convert the source material into a reduced metal compound and reaction byproducts having a sufficiently high vapor pressure for transporting in gaseous form.

Abstract: A gas inlet manifold for a plasma chamber having a perforated gas distribution plate suspended by a side wall comprising one or more sheets. The sheets preferably provide flexibility to alleviate stress in the gas distribution plate due to thermal expansion and contraction. In another aspect, the side wall provides thermal isolation between the gas distribution plate and other components of the chamber.

Abstract: A gas supplying apparatus of a system for fabricating semiconductor devices is tested for clogs. The gas supplying apparatus includes a carrier gas supplying device for supplying at least one carrier gas, and a plurality of reactive gas supplying devices connected in parallel to the carrier gas supplying device. The reactive gas supplying devices gasify the reactive gas carried by the carrier gas. A wafer, on which a desired layer is to be formed, is situated in a process chamber into which the reactive gas is supplied from the reactive gas supplying devices. The gas supplying apparatus also includes pressure detecing devices for detecting the pressure of the carrier gas near each of the reactive gas supplying devices. The carrier gas is supplied under a predetermined pressure to the reactive gas supplying devices. The reactive gas supplying device to be tested for clogs is rendered operational while the other reactive gas supplying devices are shut down.

Abstract: A reactor for forming a reactive intermediate from a precursor having a general formula of Xm—Ar—(CZ?Z?Y)n is disclosed, wherein X and Y are leaving groups, wherein Ar is an aromatic moiety and wherein the reactive intermediate has at least two free radicals. The reactor includes an inlet for admitting a flow of the precursor into the reactor, an interior having a surface at least partially formed from a material M that reacts with at least one of X and Y to remove at least one of X and Y from the precursor and to form at least one of a compound MaYb and a compound McXd, an outlet for admitting a flow of the reactive intermediate out of the reactor.

Abstract: A reactor for forming a reactive intermediate from a precursor for the deposition of a low dielectric constant polymer film via transport polymerization is disclosed. The reactor includes an inlet for admitting a flow of the precursor into the reactor, an interior for converting the precursor to the reactive intermediate, an outlet for admitting a flow of the reactive intermediate out of the interior, and at least one of an energy source and an oxidant source associated with the outlet for decomposing residues in the outlet.

Abstract: A multi-chamber installation (1) treats objects under vacuum. An evacuation system (5) connected to a plurality of chambers (2, 3, 4). To reduce the complexity of the evacuation process, a forepump (5) has several stages (11, 12, 13). Each of said stages is connected to one of the chambers (2, 3, 4).

Abstract: In one embodiment, an apparatus for fabricating nanostructure-based devices on workpieces includes: a stage for supporting a workpiece, a radiating-energy source, and a feedstock delivery system. The workpiece has catalyst thereon. The radiating-energy source is configured to focus radiating energy toward a work region of the workpiece to directly heat catalyst at the work region, without directly heating catalyst at one or more other work regions of the workpiece. The feedstock delivery system delivers feedstock gas to the catalyst at the work region. The feedstock delivery system includes a feedstock heating system. The feedstock heating system is configured to heat the feedstock gas not merely by any global heating of the chamber or any direct excitation of gas over the work region by the focused radiating energy. Preferably, the radiating-energy source emits multiple prongs of radiating energy.

Abstract: In one embodiment, an apparatus for fabricating nanostructure-based devices on a workpiece includes: a stage for supporting a workpiece, a radiating-energy source, and a feedstock delivery system. The workpiece has catalyst deposited thereon. The workpiece includes multiple work regions (e.g., dies). The feedstock delivery system is for delivery of feedstock gas to said catalyst. The feedstock delivery system is configured to directly heat catalyst on at least one die via simultaneously emitted multiple prongs of radiating energy. Preferably, the feedstock delivery system includes a feedstock heating system that is configured to heat the feedstock gas not merely by any global heating of a chamber containing the work region or any direct excitation of gas over the work region by the radiating energy.

Abstract: Chemical vapor deposition apparatus and method are provided with coating gas distribution and exhaust systems that provide more uniform coating gas temperature and coating gas flow distribution among a plurality of distinct coating zones disposed along the length of a coating chamber.

Abstract: A plasma processing apparatus comprising a plurality of plasma processing units is provided. Each of the plasma processing units has a matching circuit connected between a radiofrequency generator and a plasma excitation electrode. Among these plasma processing units, a variation <RA> between the maximum and minimum values of input-terminal-side AC resistances RA of the matching circuits defined by <RA>=(RAmax?RAmin)/(RAmax+RAmin) is adjusted to be less than 0.5. A variation between the maximum and minimum values of output-terminal-side AC resistances RB of the matching circuits defined by <RB>=(RBmax?RBmin)./(RBmax+RBmin) is also adjusted to be less than 0.5. The plasma processing units can be adjusted to achieve substantially uniform plasma results in a shorter period of time.

Abstract: The invention relates to a method for depositing III-V semiconductor layers that also contain nitrogen, especially for depositing II-IV compounds, oxides, especially metal oxides. According to the invention, the front face of the gas inlet element and the area of the substrate holder directly opposite said front face form electrodes that can be connected or that are connected to a high frequency reactor to produce a capacitive plasma.

Abstract: An upper electrode for use in generating a plasma of a processing gas includes a cooling block having a coolant path for circulating a coolant therethrough and one or more through holes for passing the processing gas therethrough, an electrode plate having one or more injection openings for injecting the processing gas toward the substrate to be processed mounted on the mounting table, and an electrode frame installed at an upper portion of the cooling block and providing a processing gas diffusion gap for diffusing the processing gas between the cooling block and the electrode frame. The electrode plate is detachably fixed to a bottom surface of the cooling block via a thermally conductive member having flexibility.

Abstract: An apparatus for processing a substrate including a processing chamber having an upper space into which a gas for processing a substrate is introduced and a lower space for exhausting processing plasma used in a process for processing the substrate and a byproduct generated in the process. An upper electrode is disposed in the upper space. The upper electrode changes the processing gas into the processing plasma, and also changes a cleaning gas into cleaning plasma for cleaning a first surface that defines the upper space. The substrate is disposed on a lower electrode. The lower electrode has an upper face defining the upper space. An auxiliary electrode is disposed in the lower space. The auxiliary electrode forms the cleaning plasma in the lower space to clean a second surface defining the lower space.

Abstract: A directed vapor deposition (DVD) method and system for applying at least one bond coating on at least one substrate for thermal barrier coating systems. To overcome the limitations incurred by conventional methods, the DVD system uses an electron beam directed vapor deposition (DVD) technique to evaporate and deposit compositionally and morphologically controlled bond coats at high rate. The present DVD system uses the combination of an electron beam and a combined inert gas/reactive gas carrier jet of controlled composition to create engineering films. In this system, the vaporized material can be entrained in the carrier gas jet and deposited onto the substrate at a high rate and with high materials utilization efficiency. The velocity and flux of the gas atoms entering the chamber, the nozzle parameters, and the operating chamber pressure can all be significantly varied, facilitating wide processing condition variation and allowing for improved control over the properties of the deposited layer.

Abstract: A plasma processing device includes a susceptor, processing vessel, dielectric plate, antenna, and projection. The susceptor has a stage surface on which a target object is to be arranged. The processing vessel accommodates the susceptor and has an opening in a side which opposes the stage surface of the susceptor. The dielectric plate closes the opening of the processing vessel. The antenna supplies a high-frequency electromagnetic field into the processing vessel through the dielectric plate. The projection projects from a surface of the antenna which opposes the dielectric plate toward the dielectric plate. The projection is conductive at least at its surface. A plasma processing method is also disclosed.

Abstract: A plasma processing apparatus includes at least one electromagnetic wave source for generating an electromagnetic wave, an electromagnetic wave-distributing waveguide portion for distributing the electromagnetic wave generated from the electromagnetic wave source, a plurality of waveguides each coupled with the electromagnetic wave-distributing waveguide portion, the waveguides being provided on the same plane, a plurality of slots provided in each of the waveguides, at least one electromagnetic wave radiating window provided to face each slot, and a vacuum vessel in which a plasma is generated by the electromagnetic wave radiated from the electromagnetic wave radiating window. The electromagnetic wave-distributing waveguide portion is provided on the plural waveguides.

Abstract: Crucibles having a bottom and surrounding side walls, provided with electrode clamps at exterior sites of side walls located opposite with respect to each other, wherein said sites are extending as lips at said side walls, and wherein said clamps are connectable with electrodes for heating said crucible, are improved in that a cross-section of each of said lips between between crucible wall and clamp is reduced with at least 5%.

Abstract: A vapor deposition apparatus, developed in particular for on-line deposition of phosphor or scintillator material, wherein said vapor deposition apparatus comprises a crucible containing a mixture of raw materials, a chimney having at least one inlet in communication with the said crucible and a linear slot outlet, one or more lineair heating elements, contained within said chimney, an oven surrounding said crucible, wherein said oven contains heating elements, shielding elements and cooling elements.

Abstract: A susceptor for use in an epitaxial growth apparatus and method where a plurality of circular through-holes are formed in the bottom wall of a pocket in an outer peripheral region a distance of up to about ½ the radius toward the center of the circular bottom wall. The total opening surface area of these through-holes is 0.05 to 55% of the surface area of the bottom wall. The opening surface area of each of the through-holes provided at this outer peripheral region is 0.2 to 3.2 mm2 and the density of the through-holes is 0.25 to 25 per cm2. After a semiconductor wafer is mounted in the pocket, epitaxial growth is carried out while source gas and carrier gas (i.e., reactive gas) is made to flow on the upper surface side of the susceptor and carrier gas is made to flow on the lower surface side.

Abstract: A lift mechanism for an object-to-be-processed is provided which can minimize displacement of an object-to-be-processed by quickly discharging the gas in the space on the side of the backside surface of the object-to-be-processed when the object-to-be-processed is mounted on a mount stand. In a lift mechanism, in which a plurality of pin-insertion holes 50 are formed in a mount stand 38 provided inside a evacuatable processing container 22, a push-up pin 52 is inserted in each of said pin-insertion holes 50, said push-up pin 52 capable of moving upwardly and downwardly, and a push-up member moves said push-up pin upwardly and downwardly so as to mount an object-to-be-processed W on said mount stand, a communication path 66 is formed in said push-up pin to communicate the space S1 above said mount stand with the space S2 below said mount stand.