Patents Issued in February 23, 2010
  • Patent number: 7666661
    Abstract: The present invention relates to the field of molecular diagnostics, and in particular to diagnostics based on a liquid crystal assay format. In particular, the present invention provided improved substrates and methods of using liquid crystal assays for quantitating the amount of an analyte in a sample. The present invention also provides materials and methods for detecting non-specific binding of an analyte to a substrate by using a liquid crystal assasy format.
    Type: Grant
    Filed: August 26, 2002
    Date of Patent: February 23, 2010
    Assignee: Platypus Technologies, LLC
    Inventors: Nicholas Abbott, Christopher Murphy, Barbara Israel
  • Patent number: 7666662
    Abstract: A chemical reaction device is provided for a chemical reaction between molecules immobilized on a solid phase and molecules in a solution, and a chemical analysis device is also provided to capture molecules in the solution by molecules immobilized on the solid phase through a chemical reaction and subsequent measurement of the captured molecules. Reaction efficiency as well as sample throughput are thereby improved. The chemical reaction device and the chemical analysis device use a channel of a microfluidic device for a reaction vessel, and at least a particular molecule is immobilized on an interior surface and a fixed structure or a non-fixed obstacle against a flow is provided in the channel.
    Type: Grant
    Filed: May 26, 2004
    Date of Patent: February 23, 2010
    Assignee: Hitachi, Ltd.
    Inventors: Yoshinobu Kohara, Kazunori Okano, Hideyuki Noda
  • Patent number: 7666663
    Abstract: The present invention is characterized by the following points: In a biochip reader used for reading a measurement sample image by light beam irradiation, a correction method for the distribution of quantity of light which is devised to remove the influence of shading for the whole image and such a biochip reader can be realized by correcting non-uniformity in said quantity of light in light beam irradiation by dividing the quantities of light of pixels in a measured image obtained from the measurement of a measurement sample by a distribution of quantity of light in an image obtained from the measurement of a uniform fluorescent plate that presents a uniform fluorescent light distribution, the positions of pixels in the measured image being correspondent to those in the image obtained through the above uniform fluorescent plate measurement.
    Type: Grant
    Filed: September 2, 2004
    Date of Patent: February 23, 2010
    Assignee: Yokogawa Electric Corporation
    Inventors: Yumiko Sugiyama, Takeo Tanaami
  • Patent number: 7666664
    Abstract: An instrument and method is provided that conveniently allows rapid amplification of nucleic acids. The instrument comprises in the following order at least one substantially flat temperature sensor element; a heat conducting substrate and a heater layer, whereby the heat conducting substrate comprises one or more channels permeable for fluid.
    Type: Grant
    Filed: July 12, 2007
    Date of Patent: February 23, 2010
    Assignee: Roche Molecular Systems, Inc.
    Inventors: Emad Sarofim, Goran Savatic
  • Patent number: 7666665
    Abstract: A device comprising an analytical sample substrate having at least one region that comprises a plurality of sample-support-structures. Each of the sample-support-structures have at least one dimension of about 1 millimeter or less. A sum of areas of contact surfaces of the sample-support-structures is substantially less than a total area of the region. The contact surfaces define a prescribed sample path to an analytical depot located on the analytical sample substrate.
    Type: Grant
    Filed: August 31, 2005
    Date of Patent: February 23, 2010
    Assignee: Alcatel-Lucent USA Inc.
    Inventors: Joanna Aizenberg, Paul Kolodner, Joseph Ashley Taylor
  • Patent number: 7666666
    Abstract: An apparatus that includes a first reactor and a return mechanism. The first reactor has an inlet to receive a mixture comprising a first reactant, a second reactant, a reaction product, and an inert solvent that dissolves at least a portion of the first and second reactants, an enzyme to facilitate a reaction between the first and second reactants to generate more reaction product, and an outlet to output the reaction product, including the reaction product received at the inlet and the reaction product generated from the reaction between the first and second reactants. The return mechanism sends at least a portion of the reaction product from the outlet back to the inlet.
    Type: Grant
    Filed: September 20, 2005
    Date of Patent: February 23, 2010
    Assignee: Sunho Biodiesel Corporation
    Inventor: Chih-Chung Chou
  • Patent number: 7666667
    Abstract: A safety bio-molecular sampling and transport system utilizing a docking connector mechanism includes a elongate enclosure having open ends along with a collection sponge slidably disposed within the enclosure. A sponge moving piston is provided within the enclosure and is engagable with a plunger handle which is configured for removably engaging the piston and enabling manual sliding of the collection sponge between the position inside of the elongate structure and a position exterior another end of the enclosure. A specimen capsule configured for removably docking to the enclosure is provided for receiving specimen and is sealable for safe and laborless transport thereof.
    Type: Grant
    Filed: August 31, 2007
    Date of Patent: February 23, 2010
    Inventor: Peter A. K. Yong
  • Patent number: 7666668
    Abstract: The invention relates to a method for obtaining a chromosomal locus for transgenesis of a multicellular eukaryotic organism, “MEO”, to a vector for transgenesis by homologous recombination of a MEO and to the use of such an vector for trans-genesis by homologous recombination of a MEO and to the transgenic MEO thus obtainable.
    Type: Grant
    Filed: August 6, 2003
    Date of Patent: February 23, 2010
    Assignee: TET Systems Holding GmbH & Co. KG
    Inventors: Hermann Bujard, Kai Schönig
  • Patent number: 7666669
    Abstract: The present invention provides 5T4 tumour-associated antigen (TAA) for use in a method of immunotherapy of tumours. The invention also relates to a recombinant poxvirus vector from which at least one immune evasion gene has been deleted, which comprises a nucleic acid sequence encoding a 5T4 TAA and the use thereof in vaccinating against and in treating tumours.
    Type: Grant
    Filed: September 18, 2006
    Date of Patent: February 23, 2010
    Assignee: Oxford Biomedica (UK) Limited
    Inventors: Miles W. Carroll, Kevin A. Myers
  • Patent number: 7666670
    Abstract: In a first aspect the present invention provides a tumor cell line stably transfected with an expression vector containing a reporter gene, preferably a fluorescent protein, operably linked to a promotor that also controls expression of a protein that is associated with tumor regression, stabilization of tumor growth or inhibition of metastatic growth, characterized in that said cell line is capable to form a tumor when implanted or injected into the non-human animal. Compared to the traditional in vivo models, the present invention differs in that the reporter gene is not constitutively expressed, but only after exposure to a test compound that results in the expression of a protein or enzyme associated with tumor regression, stabilization of tumor growth or inhibition of metastatic growth.
    Type: Grant
    Filed: March 3, 2004
    Date of Patent: February 23, 2010
    Assignee: Janssen Pharmaceutica N.V.
    Inventors: Ann Trudo Josée Beliën, Janine Arts, Ann Odette Adolf Mariën, Annemie Francine Valckx
  • Patent number: 7666671
    Abstract: A method of fixing a biological sample on a slide for cytological analysis, includes transferring a sample to a slide, applying a material having a slide-fixing amount of an inactivated, fixative to the slide, and activating the fixative. By way of example, the material may comprise a tape impregnated with the inactivated fixative, which tape may be removed from the slide after the fixative is activated.
    Type: Grant
    Filed: October 5, 2006
    Date of Patent: February 23, 2010
    Assignee: CYTYC Corporation
    Inventors: Patrick J. McCormick, Kevin Patenaude, Robert Sakal
  • Patent number: 7666672
    Abstract: The present invention relates to cells obtainable from cell lines having the ECACC Accession Nos 04091601, 04110301 and 04092302.
    Type: Grant
    Filed: January 28, 2008
    Date of Patent: February 23, 2010
    Assignee: Reneuron Limited
    Inventors: John Sinden, Kenneth Pollock, Paul Stroemer
  • Patent number: 7666673
    Abstract: The present invention provides a method of growing spermatogonial stem cells of mammals and the like in vitro, which is characterized in that glial cell-derived neurotrophic factor (GDNF) or an equivalent thereto, and leukemia inhibitory factor (LIF) are contained in a medium (culture broth) for culturing spermatogonial stem cells. According to the method of the present invention, spermatogonial stem cells can be grown in vitro to the extent that enables use thereof for developmental engineering.
    Type: Grant
    Filed: March 31, 2004
    Date of Patent: February 23, 2010
    Assignee: Kyoto University
    Inventors: Takashi Shinohara, Mito Shinohara
  • Patent number: 7666674
    Abstract: Sterically stabilized cationic liposomes (SSCL) encapsulating a K type oligodeoxynucleotide (ODN) including a CpG motif are disclosed. These SSCL encapuslating a K type ODN can be used to effectively deliver the ODN to a cell. A novel method is also disclosed for producing the SSCL encapsulating the K type ODN. Administration of the SSCL encapsulating a K type ODN and a chemotherapeutic agent, such as a chimeric molecule comprising a targeting molecule selected from the group consisting of an IL-13, and an anti-IL-13 receptor antibody; and an effector molecule selected from the group consisting of a Pseudomonas exotoxin, a Diphtheria toxin, and a radionuclide, can be used to dramatically reduce the growth of solid tumors.
    Type: Grant
    Filed: July 29, 2002
    Date of Patent: February 23, 2010
    Assignee: The United States of America as represented by the Secretary of the Department of Health and Human Services
    Inventors: Dennis M. Klinman, Ihsan Gursel, Ken J. Ishii
  • Patent number: 7666675
    Abstract: Hair follicle stem cells are isolated from mammals by isolating nestin-expressing cells. These hair follicle stem cells are a source of adult stem cells for autologous or heterologous stem cell therapy. The stem cells can be systemically implanted into the mammal or directly implanted into the organ. In addition, the stem cells may be further differentiated in vitro and then implanted systemically or directly into the mammal.
    Type: Grant
    Filed: September 20, 2002
    Date of Patent: February 23, 2010
    Assignee: AntiCancer, Inc.
    Inventors: Lingna Li, Meng Yang
  • Patent number: 7666676
    Abstract: The hedgehog pathway in cerebellar cancer cells was modulated with siRNA specifically targeted to the shh and gli-I genes. Silencing of the two genes in a medullablastoma cell line transfected with the siRNAs caused significant reduction of mRNA specific for the targeted shh and gli-I genes and a loss of protein expression. The disclosed methods and compositions may be useful for treatment of a range of primitive neuroectodermal tumors (PNET) by shutting down or modulating the expression of gene products associated with the hedgehog pathway.
    Type: Grant
    Filed: May 16, 2006
    Date of Patent: February 23, 2010
    Assignee: St. Joseph's Children's Hospital
    Inventors: Michael J. P. Lawman, Selena Braccili
  • Patent number: 7666677
    Abstract: Improved methods for production of stilbenoids including resveratrol, pinosylvin and their respective derivatives are provided, including producing hairy roots from plant cells and eliciting production of the stilbenes. The plant cells in an embodiment are infected by Agrobacterium to produce hairy roots, and contacted with substances which elicit production of the stilbenoid compounds.
    Type: Grant
    Filed: July 3, 2007
    Date of Patent: February 23, 2010
    Inventors: Luis Fabricio Medina-Bolivar, Maureen Dolan, Selester Bennett, Jose M. Condori, John F. Hubstenberger
  • Patent number: 7666678
    Abstract: The present invention provides genes and proteins having possibilities to generate plants having tolerance against excessive boron, which can confer a boric acid tolerance to organisms. 5 types of genes that can confer a boric acid tolerance to yeast, such as AtPAB2, AtRBP47c?, AtRPS20B, AtMYB13 and AtMYB68, AtRBP45a, AtRBP45b, AtRBP45c, AtRBP45d, AtRBP47a, AtRBP47b, AtRBP47c, AtUBP1a, AtUBP1b and AtUBP1c which were found by expressing several genes of higher plant Arabidopsis thaliana in yeast that is a organism model of eukaryote. Further, a key to the toxicity mechanism of boric acid exists in the specific inhibition of splicing, and a gene related to enhancement of splicing efficiency also confers a boric acid tolerance.
    Type: Grant
    Filed: September 15, 2006
    Date of Patent: February 23, 2010
    Assignee: Japan Science and Technology Agency
    Inventors: Toru Fujiwara, Akira Nozawa
  • Patent number: 7666679
    Abstract: A method for estimating the quantity of CO2 present in a geologic formation and a device for implementing the method include the steps of penetrating the formation by a well drilled from the surface contacting formation with a fluid that travels from the formation to the surface sampling a given quantity of return fluid at the surface and transferring it to a cell, ensuring the pH of the quantity of fluid, adding a given quantity of product acidifying the fluid to adjust the pH to a value of less than 4, and measuring the CO2 level of the gas in the cell after the acidification step.
    Type: Grant
    Filed: March 11, 2004
    Date of Patent: February 23, 2010
    Assignee: Institut Francais du Petrole
    Inventors: Benjamin Herzhaft, Marcel Ropars, Thierry Huard, Laurent Neau
  • Patent number: 7666680
    Abstract: A method and apparatus for measuring the presence or absence of interaction between at least a first and second material of interest by measuring osmotic pressure changes in an osmotic cell. Changes in osmotic pressure are determined by measuring the amount of compression exhibited by a compressible, semi-permeable material positioned in the cell.
    Type: Grant
    Filed: November 28, 2007
    Date of Patent: February 23, 2010
    Assignee: Palo Alto Research Center Incorporated
    Inventors: Francisco E. Torres, Jonathan S. Daniels, Meng H. Lean
  • Patent number: 7666681
    Abstract: An automated analyzer for performing multiple diagnostic assays simultaneously includes multiple stations, or modules, in which discrete aspects of the assay are performed on fluid samples contained in reaction receptacles. The analyzer includes stations for automatically preparing a specimen sample, incubating the sample at prescribed temperatures for prescribed periods, preforming an analyte isolation procedure, and ascertaining the presence of a target analyte. An automated receptacle transporting system moves the reaction receptacles from one station to the next.
    Type: Grant
    Filed: May 23, 2005
    Date of Patent: February 23, 2010
    Assignee: Gen-Probe Incorporated
    Inventors: Kelly G. Ammann, Ernest V. Hansberry
  • Patent number: 7666682
    Abstract: A marking system that allows remote observations of visual and infrared electromagnetic signatures emitted from a distinctive marker panel. A kit employing such panels is particularly suitable for military environments, which, in turn, enhances the survivability of military equipment. The marking system preferably provides a signature in the mid and far infrared and near infrared portions of the electromagnetic spectrum, such that the electromagnetic radiation can be observed by a pilot in an approaching moving object such as a plane, helicopter, or land vehicle that is equipped with a thermal imaging system or light intensifier device, even in adverse environmental conditions. In varying embodiments, the marking system may be used as a landing marker, a bore sight panel, and an identification panel. Utilization of passive infrared material enables use of such marking system when external power is unavailable.
    Type: Grant
    Filed: October 21, 2004
    Date of Patent: February 23, 2010
    Assignee: Immediate Response Technologies, Inc.
    Inventors: Douglas B. Armentrout, Thomas R. Boyer
  • Patent number: 7666683
    Abstract: The present invention relates to a novel method of determining the existence of a normal pregnancy which has a high likelihood of culminating in a term pregnancy, by measuring hyperglycosylated hCG in a pregnant woman and comparing the concentration of measured hyperglycosylated hCG with a predetermined value. A measurement of hyperglycosylated hCG above the predetermined value, for example, about 13 ng/ml, is evidence of a high likelihood of a normal pregnancy. A measurement below the predetermined value is evidence of an abnormal pregnancy (ectopic pregnancy or miscarriage). Further analysis of the patient in the event that the measurement falls below the predetermined value is made by intravaginal or abdominal ultrasound to determine whether or not the pregnancy is ectopic or will likely result in a spontaneous abortion (miscarriage).
    Type: Grant
    Filed: October 13, 2005
    Date of Patent: February 23, 2010
    Assignee: STC.UNM
    Inventor: Laurence A. Cole
  • Patent number: 7666684
    Abstract: The present invention provides sensors and methods for determination of an analyte. The analytes may be determined by monitoring, for example, a change in an optical signal of an emissive material upon exposure to an analyte. In some embodiments, the analyte and the emissive material may interact via a chemical reaction, or other chemical, biochemical or biological interaction (e.g., recognition), to form a new emissive species. In some cases, the present invention may be used for the detection of analytes such as explosives (e.g., RDX, PETN). Methods of the present invention may be advantageous in that the high sensitivity of luminescence (e.g., fluorescence) spectroscopy can allow for the reliable detection of small changes in luminescence intensity.
    Type: Grant
    Filed: October 16, 2006
    Date of Patent: February 23, 2010
    Assignee: Massachusetts Institute of Technology
    Inventors: Timothy M. Swager, Trisha L. Andrew, Samuel W. Thomas, Jean Bouffard
  • Patent number: 7666685
    Abstract: This invention generally relates to a screening method for identifying compositions suitable for use in an oral composition (e.g., a confection or chewing gum product) effective for the treatment of oral cavity malodor associated with the consumption of garlic. In particular, this invention relates to a screening method for determining the ability of a composition to reduce the concentration of a sulfide or disulfide compound (e.g., diallyl disulfide) present in a model sample or solution which is representative of the oral cavity of a subject after consuming garlic, as an indicator of the effectiveness of that composition in the treatment of oral cavity malodor associated with the consumption of garlic.
    Type: Grant
    Filed: August 2, 2006
    Date of Patent: February 23, 2010
    Assignee: Wm. Wrigley Jr. Company
    Inventors: Russell A. Bazemore, Charles J. Harrison, Michael J. Greenberg
  • Patent number: 7666686
    Abstract: An method for sample preparation using solid phase extraction. Using an apparatus comprising a SPE cartridge and a sorbent-containing gas filter which contains a sorbent and is detachably connected to the SPE cartridge the gas used to dry the SPE cartridge is purified by passage through the gas filter, thereby preventing contamination of the SPE sorbent by airborne contaminants.
    Type: Grant
    Filed: May 15, 2006
    Date of Patent: February 23, 2010
    Assignee: United Chemical Technologies, Inc.
    Inventors: Donald L. Shelly, Jr., Phillip Spraker, William L. Ozanich, Jr., Michael J. Telepchak
  • Patent number: 7666687
    Abstract: A method for combining a fluid delivery system with an analysis system for performing immunological or other chemical of biological assays. The method includes a miniature plastic fluidic cartridge containing a reaction chamber with a plurality of immobilized species, a capillary channel, and a pump structure along with an external linear actuator corresponding to the pump structure to provide force for the fluid delivery. The plastic fluidic cartridge can be configured in a variety of ways to affect the performance and complexity of the assay performed.
    Type: Grant
    Filed: August 15, 2006
    Date of Patent: February 23, 2010
    Inventors: James Russell Webster, Ping Chang, Shaw-Tzuv Wang, Chi-Chen Chen, Rong-I Hong
  • Patent number: 7666688
    Abstract: A method of manufacturing a coil inductor and a coil inductor are provided. A plurality of conductive bottom structures are formed to be lying on a first dielectric layer. A plurality pairs of conductive side structures are then formed, wherein each pair of the conductive side structure stand on top surface of a first end and a second end of each conductive bottom structure respectively; a second dielectric layer is formed on the first dielectric layer, coating the bottom and side structures; and a plurality of conductive top structures are formed to be lying on the second dielectric layer, wherein each conductive top structure electrically connects each pair of the conductive side structures, wherein the conductive bottom structures, the conductive side structures and the conductive top structures together form a conductive coil structure.
    Type: Grant
    Filed: January 25, 2008
    Date of Patent: February 23, 2010
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kai-Ming Ching, Chen-Shien Chen
  • Patent number: 7666689
    Abstract: A method holds wafers that contain patterned structures using a particle blasting tool. Next, the method directs particles at the patterned structures, such that the particles contact the patterned structures with a predetermined velocity and remove the patterned structures. This process of directing the particles at the wafer is controlled to stop directing the particles when substantially all of the patterned structures are removed from the wafer. This process also comprises selecting the particles to have a size equal to or less than 3 microns. For example, the particles can comprise aluminum oxide, silicon oxide, cerium, and/or a plastic. By maintaining the particle size equal to 3 microns or less, the blasting produces a substantially smooth wafer surface, thereby omitting the need for subsequent wafer polishing. Further, the wafers produced by such processing do not exhibit the highly stress lattice and fragile nature of wafers processed by wet processing.
    Type: Grant
    Filed: December 12, 2006
    Date of Patent: February 23, 2010
    Assignee: International Business Machines Corporation
    Inventors: Steven R. Codding, David Domina, James L. Hardy, Timothy Krywanczyk
  • Patent number: 7666690
    Abstract: Exemplary embodiments of the selective laser repair apparatus and method may allow the repair of metal bumps in a semiconductor device stack by applying a laser beam to a damaged and/or defective bump. Metal bumps may be repaired and individual chips and/or packages forming a device stack need not be separated. The operation of a control unit and a driving unit may position a laser unit such that a laser beam may be irradiated at the damaged and/or defective metal bump. An X-ray inspection unit may obtain information about the damaged and/or defective metal bump.
    Type: Grant
    Filed: August 13, 2008
    Date of Patent: February 23, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kang-Wook Lee, Se-Young Jeong
  • Patent number: 7666691
    Abstract: The present invention provides a method for manufacturing an organic semiconductor thin film by a wet process with a composite solution prepared by dissolving at least two organic semiconductor compounds in a mixed organic solvent including at least two organic solvents having different volatility and having different solubilities of the organic compounds at room temperature. Due to the differences in the evaporation speeds of the solvents and the solubilities of the organic compounds, the organic compounds are continuously deposited according to the composition of solvent that sequentially evaporates. Thus, the organic semiconductor thin film having a continuous multi-layer (non-boundary multi-layer) structure can be manufactured where different organic compounds coexist between the organic layers.
    Type: Grant
    Filed: March 8, 2006
    Date of Patent: February 23, 2010
    Inventor: Byoung-Choo Park
  • Patent number: 7666692
    Abstract: A LED chip having first and second electrodes on opposite principal surfaces, is bonded to a substrate through a composite bonding layer. The composite bonding layer is formed when a support substrate including the substrate and a first bonding layer is bonded to a lamination structure including the LED, the first electrode and a second bonding layer. The first or second bonding layer contains at least part of eutectic composition. At least one of the support substrate and the lamination structure includes a diffusion material layer. The composite bonding layer is formed in such a manner that eutectic material contents are mixed with the other to form a first mixture, and that the first mixture is mixed with diffusion material to form a second mixture having a melting point higher than a melting point of the first mixture.
    Type: Grant
    Filed: June 25, 2008
    Date of Patent: February 23, 2010
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Junichi Sonoda, Seiichiro Kobayashi, Kazuyuki Yoshimizu
  • Patent number: 7666693
    Abstract: Provided are a top-emitting N-based light emitting device and a method of manufacturing the same. The device includes a substrate, an n-type clad layer, an active layer, a p-type clad layer, and a multi ohmic contact layer, which are sequentially stacked. The multi ohmic contact layer includes one or more stacked structures, each including a modified metal layer and a transparent conductive thin film layer, which are repetitively stacked on the p-type clad layer. The modified metal layer is formed of an Ag-based material.
    Type: Grant
    Filed: July 25, 2008
    Date of Patent: February 23, 2010
    Assignees: Samsung Electronics Co., Ltd., Gwangju Institute of Science and Technology
    Inventors: June-o Song, Tae-yeon Seong, Joon-seop Kwak, Woong-ki Hong
  • Patent number: 7666694
    Abstract: An improved throughput can be presented, since an influence of the deterioration in crystallinity created in the epitaxial layer can be eliminated by a simple and easy method, and a semiconductor laser device having stabilized properties such as threshold current, slope efficiency, device life time and the like can be presented. A method for manufacturing a semiconductor laser device according to the present invention comprises: forming partially a diffraction grating on a surface of a semiconductor substrate or on a film on the surface of the semiconductor substrate; and forming a multiple-layered film by forming an epitaxial layer on a surface of the diffraction grating. The operation of forming the diffraction grating includes an operation of forming the diffraction grating so that a width of the diffraction grating in a direction that is orthogonal to a cavity direction of the semiconductor laser device is presented as a width equal to or longer than a sum of a mesa width and 30 ?m.
    Type: Grant
    Filed: September 18, 2006
    Date of Patent: February 23, 2010
    Assignee: NEC Electronics Corporation
    Inventors: Masahide Kobayashi, Shotaro Kitamura
  • Patent number: 7666695
    Abstract: Provided is an array substrate of an LCD that includes a substrate, an active layer, a first insulating layer, and a gate electrode sequentially formed on the substrate. A source region and a drain region reside in predetermined regions of the active layer and each is doped with impurity ions. A second insulating layer overlies an entire surface of the substrate including the gate electrode. A pixel electrode resides on the second insulating layer. First and second contact holes reside in the first and second insulating layer and expose portions of the source region and the drain region, respectively. A portion of a source electrode contacts the source region through the first contact hole and a first portion of a drain electrode contacts the drain region and a second portion contacts the pixel electrode.
    Type: Grant
    Filed: March 27, 2008
    Date of Patent: February 23, 2010
    Assignee: LG. Display Co., Ltd.
    Inventors: Hun Jeoung, Jeong Woo Jang
  • Patent number: 7666696
    Abstract: Exemplary embodiments provide MQW semiconductor devices and methods for their manufacture. The MQW semiconductor devices can be formed by growing a MQW active region over a nanoscale periodic strain array. By using the nanoscale periodic strain array, the position, size, and composition of the In-rich clusters in the MQW active region can be controlled. This control of In-rich clusters can result in tighter wavelength control, which can be important for applications, such as, for example, lasers and LEDs.
    Type: Grant
    Filed: November 8, 2006
    Date of Patent: February 23, 2010
    Assignee: STC.UNM
    Inventor: Stephen D. Hersee
  • Patent number: 7666697
    Abstract: A thin film transistor (TFT) substrate having an improved wire structure without an under-cut phenomenon that may occur during formation of a gate wire having a double-layered structure and a method of manufacturing the same are provided, where the method includes forming a first metal layer made of at least one low resistance material selected from the group consisting of Al, AlNd, Cu, and Ag, forming a second metal layer made of at least one heat-resistant, etch-resistant material selected from the group consisting of Cr, CrNx, Ti, Mo, and MoW on the first metal layer, forming an etch mask on the second metal layer, sequentially etching the second metal layer and the first metal layer using the etch mask, and forming a second metal layer pattern and a first metal layer pattern, respectively, and selectively re-etching the second metal layer pattern using the etch mask to make a width of the second metal layer pattern smaller than or substantially equal to a width of the first metal layer pattern, and comple
    Type: Grant
    Filed: June 19, 2006
    Date of Patent: February 23, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Joo-sun Yoon
  • Patent number: 7666698
    Abstract: A method is provided for constructing a microelectronic assembly. A semiconductor substrate having a MEMS device formed on a first portion thereof, a semiconductor device formed on a second portion thereof, and a build up layer having a first portion formed over the MEMS device and a second portion formed over the semiconductor device is provided. The first portion of the build up layer over the MEMS device is removed. A release body is formed adjacent to the MEMS device. A structural material is formed over the release body. An opening is formed in the structural material to expose the release body. The release body is removed through the opening to form a cavity between the MEMS device and the structural material. The opening in the structural material is sealed with a sealing material.
    Type: Grant
    Filed: March 21, 2006
    Date of Patent: February 23, 2010
    Assignee: Freescale Semiconductor, Inc.
    Inventor: Peter Zurcher
  • Patent number: 7666699
    Abstract: A high-density impurity diffused layer of an identical conduction type to the semiconductor substrate on which the impurity is doped higher in density than the semiconductor substrate around the diffuse resistance region is provided, one side of the electrodes is formed extending to the high-density impurity diffused layer and the diffused resistance region and the high-density impurity diffused layer are connected in a semiconductor strain gauge that is formed on the surface of the semiconductor substrate of a fixed conduction type and is provided with the diffused resistance region of opposite conduction type to the semiconductor substrate and is provided with electrodes on both ends of the diffused resistance region.
    Type: Grant
    Filed: May 1, 2007
    Date of Patent: February 23, 2010
    Assignees: Tanita Corporation, Toko, Inc
    Inventors: Ikuo Hakomori, Yuji Nakamura, Keiichi Nakanishi, Koichi Ida
  • Patent number: 7666700
    Abstract: The present invention is an etching mask used for fabricating of the MEMS resonator including an oscillator which both edges are fixed to a base substance and vibrates to a vibrating direction, and an electrode which is fixed to a base substance by vibration is impossible in parallel for the oscillator, and is placed every one or more at the both sides of the oscillator. The etching mask includes a mask pattern 36 for oscillators which covers an oscillator formation scheduled region 34 on a conductive film 30 formed all over a sacrificial film which covers a region of the principal surface except both edges of the oscillator, and a mask pattern 40 for electrodes which covers an electrode formation scheduled region 38 on a conductive film.
    Type: Grant
    Filed: March 7, 2008
    Date of Patent: February 23, 2010
    Assignee: Oki Semiconductor Co., Ltd.
    Inventor: Yasushi Igarashi
  • Patent number: 7666701
    Abstract: The present invention is directed to structures and methods of fabricating electromechanical memory cells having nanotube crossbar elements. Such memory cells include a substrate having transistor with a contact that electrically contacts with the transistor. A first support layer is formed over the substrate with an opening that defines a lower chamber above the electrical contact. A nanotube crossbar element is arranged to span the lower chamber. A second support layer is formed with an opening that defines a top chamber above the lower chamber, the top chamber including an extension region that extends beyond an edge of the lower chamber to expose a portion of the top surface of the first support layer. A roof layer covers the top of the top chamber and includes an aperture that exposes a portion of the extension region of the top chamber and includes a plug that extends into the aperture in the roof layer to seal the top and bottom chambers.
    Type: Grant
    Filed: May 5, 2006
    Date of Patent: February 23, 2010
    Assignee: Nantero, Inc.
    Inventors: Richard J. Carter, Peter A. Burke, Verne C. Hornback
  • Patent number: 7666702
    Abstract: A method for fabricating a microstructure is to form at least one insulation layer including a micro-electro-mechanical structure therein over an upper surface of a silicon substrate. The micro-electro-mechanical structure includes at least one microstructure and a metal sacrificial structure that are independent with each other. In the metal sacrificial structure are formed a plurality of metal layers and a plurality of metal via layers connected to the respective metal layers. A barrier layer is formed over an upper surface of the insulation layer, and an etching stop layer is subsequently formed over a lower surface of the silicon substrate. An etching operation is carried out from the lower surface of the silicon substrate to form a space corresponding to the micro-electro-mechanical structure, and then the metal sacrificial structure is etched, thus achieving a microstructure suspension.
    Type: Grant
    Filed: November 28, 2007
    Date of Patent: February 23, 2010
    Assignee: MEMSmart Semiconductor Corp.
    Inventors: Sheng-Hung Li, Siew-Seong Tan, Cheng-Yen Liu, Li-Ken Yeh
  • Patent number: 7666703
    Abstract: An active pixel using a transfer gate that has a polysilicon gate doped with indium. The pixel includes a photosensitive element formed in a semiconductor substrate and an n-type floating node formed in the semiconductor substrate. An n-channel transfer transistor having a transfer gate is formed between the floating node and the photosensitive element. The pixel substrate has a laterally doping gradient doped with an indium dopant.
    Type: Grant
    Filed: January 14, 2005
    Date of Patent: February 23, 2010
    Assignee: OmniVision Technologies, Inc.
    Inventors: Howard E. Rhodes, Hidetoshi Nozaki
  • Patent number: 7666704
    Abstract: A solid-state imaging device of the present invention includes a base 13, a plurality of photoelectric conversion portions 11 formed in a surface of the base 13, and an insulating film 18 formed above the base 13. Openings 18h are formed in the insulating film 18 so that each of the openings 18h is located above each of the photoelectric conversion portions 11. Optical waveguides 19 having a refractive index higher than that of the insulating film 18 are formed in each of the openings 18h. And the optical waveguides 19 are made of a composite material containing a resin 19a and inorganic particles 19b.
    Type: Grant
    Filed: April 19, 2006
    Date of Patent: February 23, 2010
    Assignee: Panasonic Corporation
    Inventors: Masaaki Suzuki, Michiyoshi Nagashima, Atsushi Tomozawa
  • Patent number: 7666705
    Abstract: Provided is an image sensor and method of manufacturing the same. The image sensor can include a semiconductor substrate, a metal interconnection layer, an inorganic layer, lens seed patterns, and microlenses. The semiconductor substrate can include unit pixels. The metal interconnection layer can be disposed on the semiconductor substrate to provide signal and poser connections to the unit pixels. The inorganic layer can be disposed on the metal interconnection layer. The lens seed patterns are selectively disposed on the inorganic layer and are formed of an organic material. The microlenses are formed on the lens seed patterns.
    Type: Grant
    Filed: April 30, 2008
    Date of Patent: February 23, 2010
    Assignee: Dongbu Hitek Co., Ltd.
    Inventor: Young Je Yun
  • Patent number: 7666706
    Abstract: A method is disclosed for making a thin-film poly-crystalline silicon solar cell. In the method, there is provided an ITO-glass substrate by coating a glass substrate with a transparent and conductive ITO film. An amorphous silicon film is grown on the ITO-glass substrate. An aluminum film is grown on the amorphous silicon film. The aluminum film and the amorphous silicon film are annealed and therefore converted and interchanged into an aluminum-silicon alloy film and a p+ poly-crystalline silicon film, respectively. In a low-temperature plasma-based deposition process, a p? poly-crystalline silicon film is coated on the p+ poly-crystalline silicon film, and an n+ poly-crystalline silicon film is coated on the p? poly-crystalline silicon film. An ohmic contact is provided on the transparent and conductive ITO film. Other ohmic contacts are provided on the n+ poly-crystalline silicon film. An anti-reflection film is coated on the n+ poly-crystalline silicon film.
    Type: Grant
    Filed: December 4, 2007
    Date of Patent: February 23, 2010
    Assignee: Atomic Energy Council
    Inventors: Yu-Hsiang Huang, Shan-Ming Lan, Tsun-Neng Yang, Chien-Te Ku, Meng-Chu Chen, Zhen-Yu Li
  • Patent number: 7666707
    Abstract: A display device and a method for manufacturing the display device are provided. The display device includes an organic layer on an auxiliary wiring is removed with high precision by one operation and, thereby, the yield and the productivity are improved. A lower electrode is formed by patterning in each pixel on a substrate. An auxiliary wiring including a light absorption layer is formed between individual pixels. An organic layer is formed on the substrate while covering the lower electrodes. Laser irradiation is conducted from the organic layer side, the laser light is converted to heat in the light absorption layer exposed at a portion under the organic layer, and the organic layer portion above the light absorption layer is removed selectively. An upper electrode is formed on the organic layer and is connected to the light absorption layer portion of the auxiliary wiring.
    Type: Grant
    Filed: August 10, 2006
    Date of Patent: February 23, 2010
    Assignee: Sony Corporation
    Inventors: Tetsuo Nakayama, Takanori Shibasaki, Nobuo Ozawa, Eisuke Matsuda, Takashi Hirano, Tadashi Ishibashi, Yoichi Tomo, Keisuke Matsuo
  • Patent number: 7666708
    Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal is, axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less an 5 nanometers. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety assembling techniques may be used to fabricate devices from such a semiconductor.
    Type: Grant
    Filed: October 4, 2006
    Date of Patent: February 23, 2010
    Assignee: President and Fellows of Harvard College
    Inventors: Charles M. Lieber, Yi Cui, Xiangfeng Duan, Yu Huang
  • Patent number: 7666709
    Abstract: A semiconductor device has an adhesive layer depositing over a temporary carrier. A plurality of fiduciary patterns is formed over the adhesive layer. A repassivation layer is formed over semiconductor die. The repassivation layer may be a plurality of discrete regions. Alignment slots are formed in the repassivation layer. The fiducial patterns and alignment slots have slanted sidewalls. Leading with the repassivation layer, the semiconductor die is placed onto the carrier so that the alignment slots envelope and lock to the fiducial patterns. Alternatively, a die without the repassivation layer is placed between the fiducial patterns. An encapsulant is deposited over the semiconductor die while the die remain locked to the fiducial patterns. The carrier, adhesive layer, and fiducial patterns are removed after depositing the encapsulant. An interconnect structure is formed over the repassivation layer to electrically connect to contact pads on the semiconductor die.
    Type: Grant
    Filed: December 10, 2008
    Date of Patent: February 23, 2010
    Assignee: STATS ChipPAC, Ltd.
    Inventors: Yaojian Lin, Rui Huang, Hin Hwa Goh
  • Patent number: 7666710
    Abstract: A method of manufacturing photo couplers is provided. At first, a receiver lead-frame array is cut from a lead-frame matrix having a transmitter lead-frame array and the receiver lead-frame array. Then, the receiver lead-frame array is overturned and placed on the lead-frame matrix to allow light-receiver elements on the receiver lead-frame array to face light-emitting elements on the transmitter lead-frame array of the lead-frame matrix. Finally, the receiver lead-frame array and the lead-frame matrix are connected.
    Type: Grant
    Filed: August 28, 2006
    Date of Patent: February 23, 2010
    Assignee: Everlight Electronics Co., Ltd.
    Inventors: Ming-Jing Lee, Shih-Jen Chuang, Chih-Hung Hsu, Yi-Hu Chao