Abstract: The fully-aromatic thermotropic liquid crystal polyester resin composition of the present invention comprises 100 parts by mass of a fully-aromatic thermotropic liquid crystal polyester; and 50 to 150 parts by mass of titanium oxide, wherein the fully-aromatic thermotropic liquid crystal polyester comprises a repeating structural unit represented by the following formula (1), a repeating structural unit represented by the following formula (2), and a repeating structural unit represented by the following formula (3), and comprises 65 mole % to 78 mole % of the repeating structural unit represented by the formula (1). wherein X and Y each represent a divalent group having an aromatic ring.

Abstract: Described herein are devices, compositions, and methods for improving color discernment.

Abstract: The invention relates to methods and products for producing fatty acids by manipulating metabolic function in plants and fungus. The fatty acids generated according to the invention may be useful in the production of biofuels.

Abstract: The invention relates to a method for treatment of a carbon dioxide-rich gas fraction (16) containing oxidizable substances, which fraction occurs in the production of a synthesis gas (9), in which a hydrocarbon-containing feedstock (1) is conducted through the reformer tubes (R) arranged in the furnace chamber (F) of a burner-fired steam reformer (D) and in the process is converted into a crude synthesis gas (4) containing hydrogen, carbon monoxide, carbon dioxide and hydrocarbons. At least a part of the carbon dioxide-rich gas fraction (16) containing oxidizable substances is subjected to a thermal treatment in an oxygen-containing atmosphere, wherein oxidizable substances are burnt.

Abstract: The present subject matter describes a gasification system (100) for gasifying a variety of feedstocks. A first stage gasifier (105) receives a feedstock either from a first group of feedstocks or a second group of feedstocks or both. The first stage gasifier decomposes the received feedstock to produce a first product. A second stage gasifier (115) is connected to the first stage gasifier (105) for receiving the first product. In addition, the second stage gasifier (115) receives a feedstock either from a third group of feedstocks or a fourth group of feedstocks or both. The second stage gasifier (115) gasifies the first product and the received feedstock to produce syngas.

Abstract: To provide a curable resin composition that can improve resistant properties such as thermal impact resistance even in a high-temperature and high-humidity environment and has a high adhesive property, high conduction reliability and superior crack resistant property. The curable resin composition contains an epoxy resin and an epoxy resin-use curing agent, and is characterized in that a difference between a maximum value of tan ? in a viscoelastic spectrum and a value of the tan ? at ?40° C. thereof is 0.1 or more.

Abstract: Provided is a conductive paste for screen printing, capable of being baked at a low temperature of 150° C. or lower and being printed on a plastic substrate that cannot be subjected to printing at high temperatures. The conductive paste for screen printing contains metal nanoparticles (Y) protected by an organic compound (X) containing a basic nitrogen atom; a deprotecting agent (A) for the metal nanoparticles; and an organic solvent (B), wherein an aliphatic monocarboxylic acid having 6 to 10 carbon atoms and/or an unsubstituted aliphatic dicarboxylic anhydride is used as the deprotecting agent (A) for the metal nanoparticles, and a polyalkylene glycol is used as the organic solvent (B).

Abstract: A method for preparing a nanometal-polymer composite conductive film includes the steps of (1) mixing a metal oxide with a polymer solution; (2) coating a substrate with a solution resulting from step (1), followed by drying the resultant solution to form a film; (3) performing thermal treatment on the film formed in step (2); and (4) sintering the film thermally treated in step (3). The method dispenses with any reducing agent or dispersing agent but allows nanometallic particles to be formed in situ and thereby reduces surface resistance of the polymer film efficiently.

Abstract: The present invention provides for a relatively simple method to decrease the electrical resistivity of conductive adhesives by in-situ nanoparticle formation and sintering using a reducing agent. The reducing agent was found to cause sintering within the conductive adhesive by facilitating the reduction of the silver salts of fatty acids on the surface of silver flakes, leading to the formation of nano-/submicron-silver necks. These silver necks bridge neighboring silver flakes, decreasing the contact resistance between flakes within the conductive adhesives. The reducing agent also removes at least a portion of the lubricant commonly found on silver flakes used in conductive adhesives, thus reducing the tunneling resistance between the silver flakes.

Abstract: It is an object to provide a maleimide-based compound having excellent photoelectric conversion characteristics, and a tautomer or a stereoisomer thereof, a dye for photoelectric conversion, a semiconductor electrode, a photoelectric conversion element, and a photoelectrochemical cell. In order to accomplish the above-described objects, a dye for photoelectric conversion including at least one compound represented by the following general formula (1) is provided. (In the formula (1), R1 represents a direct bond, or a substituted or unsubstituted alkylene group. X represents an acidic group. D represents an organic group containing an electron-donating substituent. Z represents a linking group that has at least one hydrocarbon group selected from aromatic rings or heterocyclic rings).

Abstract: Materials and structures for improving the performance of semiconductor devices include ZnBeO alloy materials, ZnCdOSe alloy materials, ZnBeO alloy materials that may contain Mg for lattice matching purposes, and BeO material. The atomic fraction x of Be in the ZnBeO alloy system, namely, Zn1-xBexO, can be varied to increase the energy band gap of ZnO to values larger than that of ZnO. The atomic fraction y of Cd and the atomic fraction z of Se in the ZnCdOSe alloy system, namely, Zn1-yCdyO1-zSez, can be varied to decrease the energy band gap of ZnO to values smaller than that of ZnO. Each alloy formed can be undoped, or p-type or n-type doped, by use of selected dopant elements.

Abstract: A yoke for receiving, raising, and lowering a vehicle having left and right tires by engagement with the left and right tires, the yoke having a left capture frame; a right capture frame; a span member having left and right ends, and having a medial jack clearance space arch; left and right socket joints for mounting the left and right capture frames upon the span member's left and right ends; and a rotation stopping pin fixedly attached to the arch, the rotation stopping pin being fitted for engaging a socket within a distal end of a trolley jack's lift arm.

Abstract: A lifting device that raises persons with limited mobility from a first position, such as lying on the floor, to a second position, such as a sitting or standing position, and vice versa. The lifting device has a base, a plurality of supports which extend from the base and a platform connected to the supports. The platform travels upon the supports by way of a plurality of gears which are connected to a power source which is controlled by a controller. In this way the platform travels between a first position, such as adjacent the floor, and the second position, such as sitting or standing.

Abstract: A gear reduction assembly may include a main input shaft, a carrier coupled to the main input shaft, and at least one carrier shaft coupled to the carrier and spaced from the main input shaft. The gear reduction assembly may also include at least one spur gear pair including a first spur gear coupled to the carrier shaft, and a second spur gear, wherein the first and second spur gears are coupled to one another such that they rotate together. The gear reduction assembly also includes a first internal gear engaged with the first spur gear, a second internal gear engaged with the second spur gear, and a hub associated with the first internal gear. The first internal gear has a first number of teeth, the second internal gear has a second number of teeth, and the first and second numbers of teeth differ by from one to five teeth.

Abstract: A portable ascender device on a rope comprising an actuation element, manual or motor-driven, a nautical winch provided with a self-tailing arrangement, rotated by the actuation element, and at least one first forced passage of the rope in proximity to the winch. The first forced passage is arranged upstream of the winch with respect to the rope winding direction. A method for hoisting oneself by means of such device along a generally vertically stretched rope, and two methods for descending along the rope by means of the same device, respectively in active mode and in passive mode, are also described.

Abstract: The guiding device (2) according to the invention comprises an essentially U-shaped guiding groove for guiding a first rope (6), two guiding lumens (7) for guiding a closed loop of a second rope (8) for securing the guiding device on a fixed attachment point (9) or on a mobile part to be handled, the two guiding lumens (7) extending on both sides of the plane defined by the guiding groove (5), and a fixation tab (11) of the closed loop of the second rope (8) on the guiding device. The guiding device (2) also comprises first and second passage openings (15) each respectively emerging in one of the guiding lumens (7), each of the first and second passage openings (15) being arranged to allow the insertion of the second rope (8) into the corresponding guiding lumen.

Abstract: A fence rail includes a detachable fastener cover that covers and conceals a fastener chamber. Through the use of a knuckle and a catch fastening system, moisture is prevented from entering the fastener chamber. The fastener chamber allows for securing pickets to the rail using a means for fastening as close to the top of the rail as possible thereby allowing for significant racking of the fence.

Abstract: The present invention relates to resistive memory devices incorporating therein vertical selection transistors and methods for making the same.

Abstract: A device includes a substrate having a first region and a second region. The first region comprises a first field effect transistor having a horizontal channel region within the substrate, a gate overlying the horizontal channel region, and a first dielectric covering the gate of the first field effect transistor. The second region of the substrate includes a second field effect transistor comprising a first terminal extending through the first dielectric to contact the substrate, a second terminal overlying the first terminal and having a top surface, and a vertical channel region separating the first and second terminals. The second field effect transistor also includes a gate on the first dielectric and adjacent the vertical channel region, the gate having a top surface that is co-planar with the top surface of the second terminal.

Abstract: Embodiments of the present invention generally relate to a resistive switching nonvolatile memory element that is formed in a resistive switching memory device that may be used in a memory array to store digital data. The memory element is generally constructed as a metal-insulator-metal stack. The resistive switching portion of the memory element includes a getter portion and/or a defect portion. In general, the getter portion is an area of the memory element that is used to help form, during the resistive switching memory device's fabrication process, a region of the resistive switching layer that has a greater number of vacancies or defects as compared to the remainder of resistive switching layer. The defect portion is an area of the memory element that has a greater number of vacancies or defects as compared to the remainder of the resistive switching layer, and is formed during the resistive switching memory device's fabrication process.

Abstract: A nonvolatile memory element including a resistance variable element configured to reversibly change between a low-resistance state and a high-resistance state in response to electric signals with different polarities; and a current controlling element configured such that when a current flowing when a voltage whose absolute value is a first value which is larger than 0 and smaller than a predetermined voltage value and whose polarity is a first polarity is applied is a first current and a current flowing when a voltage whose absolute value is the first value and whose polarity is a second polarity is applied is a second current, the first current is higher than the second current, and the resistance variable element is connected with the current controlling element such that the first polarity voltage is applied to the current controlling element when the resistance variable element changes from the low-resistance to the high-resistance state.

Abstract: Embodiments of the invention generally relate to nonvolatile memory devices, such as a ReRAM cells, and methods for manufacturing such memory devices, which includes optimized, atomic layer deposition (ALD) processes for forming metal oxide film stacks. The metal oxide film stacks contain a metal oxide coupling layer disposed on a metal oxide host layer, each layer having different grain structures/sizes. The interface disposed between the metal oxide layers facilitates oxygen vacancy movement. In many examples, the interface is a misaligned grain interface containing numerous grain boundaries extending parallel to the electrode interfaces, in contrast to the grains in the bulk film extending perpendicular to the electrode interfaces. As a result, oxygen vacancies are trapped and released during switching without significant loss of vacancies.

Abstract: A graphene layer is generated on a substrate. A plastic material is deposited on the graphene layer to at least partially cover the graphene layer. The substrate is separated into at least two substrate pieces.

Abstract: A single-photon generator contains nitrogen-vacancies or other color centers in diamond as emitters of single photons which are excited by the laser beam or another optical source and can work stably under normal conditions, the metamaterial with hyperbolic dispersion as enhancing environment, and photonic guiding structure to collect and transmit single photons further.

Abstract: A method of manufacturing a quantum dot layer, and a quantum dot optoelectronic device including the quantum dot layer. The method includes sequentially stacking a self-assembled monolayer, a sacrificial layer, and a quantum dot layer on a source substrate; disposing a stamp on the quantum dot layer; picking up the sacrificial layer, the quantum dot layer and the stamp; and removing the sacrificial layer from the quantum dot layer using a solution that dissolves the sacrificial layer.

Abstract: The present disclosure provides methods of using quantum dots or Q dots or a similar nanocrystal to transfer, for example, excess LED light energy in the blue band to the red band where such LEDs tend to be deficient. This approach would balance the overall spectrum of the LED without a corresponding loss in brightness as would be the case where the light from the LED was passed through a conventional filter. The Q dots could be applied to the lens portion of the LED after the high temperature processes are completed or coated to a clear filter to be placed in the LED light path.

Abstract: In the nitride semiconductor device of the present invention, an active layer 12 is sandwiched between a p-type nitride semiconductor layer 11 and an n-type nitride semiconductor layer 13. The active layer 12 has, at least, a barrier layer 2a having an n-type impurity, a well layer 1a made of a nitride semiconductor that includes In and a barrier layer 2c that has a p-type impurity, or that has been grown without being doped. An appropriate injection of carriers into the active layer 12 becomes possible by arranging the barrier layer 2c nearest to the p-type layer side.

Abstract: A unit pixel of an image sensor and a photo detector are disclosed. The photo detector of the present invention configured to absorb light can include: a light-absorbing part configured to absorb light by being formed in a floated structure; an oxide film being in contact with one surface of the light-absorbing part; a source being in contact with one side of the other surface of the oxide film and separated from the light-absorbing part with the oxide film therebetween; a drain facing the source so as to be in contact with the other side of the other surface of the oxide film and separated from the light-absorbing part with the oxide film therebetween; and a channel interposed between the source and the drain and configured to form flow of an electric current between the source and the drain.

Abstract: A unit pixel of an image sensor and a photo detector are disclosed. The photo detector can include: a substrate in which a V-shaped groove having a predetermined angle is formed; a light-absorbing part formed in a floated structure above the V-shaped groove and to which light is incident; an oxide film formed between the light-absorbing part and the V-shaped groove and in which tunneling occurs; a source formed adjacent to the oxide film on a slope of one side of the V-shaped groove and separated from the light-absorbing part by the oxide film; a drain formed adjacent to the oxide film on a slope of the other side of the V-shaped groove and separated from the light-absorbing part by the oxide film; and a channel interposed between the source and the drain along the V-shaped groove to form flow of an electric current between the source and the drain.

Abstract: An organic light-emitting display apparatus includes a first insulating layer, a second insulating layer on the first insulating layer and including an unevenness portion, a third insulating layer on the second insulating layer, a pixel electrode on the third insulating layer, an opposite electrode facing the pixel electrode, and an organic emission layer between the pixel electrode and the opposite electrode; a thin film transistor including an active layer, a gate electrode, and source/drain electrodes connected to the active layer, the first insulating layer being between the active layer and the gate electrode and the second insulating layer being between the gate electrode, and the source/drain electrodes; and a capacitor including a lower electrode on a same layer as the gate electrode, a dielectric layer of a same material as the third insulating layer, and an upper electrode on a same layer as the pixel electrode.

Abstract: The inventive concept provides organic light emitting diodes and methods of manufacturing an organic light emitting diode. The organic light emitting diode includes a substrate, a first electrode layer and a second electrode layer formed on the substrate, an organic light emitting layer disposed between the first electrode layer and the second electrode layer and generating light, and a scattering layer between the first electrode layer and the substrate or between the first electrode layer and the organic light emitting layer. The scattering layer scatters the light.

Abstract: Devices that include one or more functional semiconductor elements that are immersed in static electric fields (E-fields). In one embodiment, one or more electrets are placed proximate the one or more organic, inorganic, or hybrid semiconductor elements so that the static charge(s) of the electret(s) participate in creating the static E-field(s) that influences the semiconductor element(s). An externally applied electric field can be used, for example, to enhance charge-carrier mobility in the semiconductor element and/or to vary the width of the depletion region in the semiconductor material.

Abstract: The inventive concept provides organic light emitting diodes and methods of fabricating the same. The method may include forming an insulating layer on a substrate, coating a metal ink on the insulating layer, thermally treating the substrate to permeate the metal ink into the insulating layer, thereby forming an assistant electrode layer the insulating layer and the metal ink embedded in the insulating layer, and sequentially forming a first electrode, an organic light emitting layer, a second electrode on the assistant electrode layer.

Abstract: An organic EL display includes: a plurality of first electrodes provided in a display region on a drive substrate, the plurality of first electrodes each including a laminated film having two or more layers; an organic layer provided on the plurality of first electrodes and including a light emitting layer; an electrode pad provided in a peripheral region around the display region; and a second electrode provided on the organic layer as well as the electrode pad, wherein the laminated film includes a first conductive film functioning as a reflective film, and a second conductive film provided below the first conductive film, and having a reflectance lower than that of the first conductive film, and the electrode pad corresponds to a part of the laminated film, and includes a conductive film made of a material same as that of the second conductive film.

Abstract: To provide a photoelectric conversion device which has little light loss caused by light absorption in a window layer, the photoelectric conversion device includes a first electrode, a first semiconductor layer formed over the first electrode, a second semiconductor layer formed over the first semiconductor layer, a third semiconductor layer formed over the second semiconductor layer, and a second electrode formed over the third semiconductor layer; and the first semiconductor layer is a light-transmitting semiconductor layer containing an organic compound and an inorganic compound, and the second semiconductor layer and the third semiconductor layer are each a semiconductor layer containing an organic compound.

Abstract: This invention provides a transition metal carbene complexes and the electroluminescent application thereof. Through employing different N?N heteroleptic ligand, the transition metal carbene complex can display wide-range color tuning ability from deep blue to red. The mentioned transition metal carbene complex can be applied in luminescent device, and the luminescent device can display wide-range color tuning ability with high luminescent efficiency while employing different N?N heteroleptic ligand in the transition metal carbene complex.

Abstract: An organic light-emitting device including a first substrate, a second substrate, a light drawing-out layer disposed between the first substrate and the second substrate, a transparent electrode disposed between the light drawing-out layer and the first substrate, a reflection electrode disposed between the transparent electrode and the first substrate, and a first light-emitting unit disposed between the transparent electrode and the reflection electrode. The first light-emitting unit includes a first light-emitting layer that emits a first light-emitting color.

Abstract: An electroluminescent organic semiconductor element includes a substrate and a first electrode arranged on the substrate. The semiconductor element additionally contains a second electrode and at least one organic layer, which is arranged between the first electrode and the second electrode. The organic layer is a layer that generates light by recombination of charge carriers. At least one of the first and the second electrode contains a highly conductive organic sublayer.

Abstract: Provided is organic EL display panel and an organic EL display apparatus that can be driven at a low voltage and that exhibit excellent light-emitting efficiency. Included are a substrate, a first electrode, an auxiliary wiring, a hole injection layer, a functional layer, and a second electrode. The hole injection layer and the second electrode are formed to be continuous above the first electrode and above the auxiliary wiring. The second electrode and the auxiliary wiring are electrically connected by the hole injection layer in an organic EL display panel. The hole injection layer is a metal oxide film, and metal atoms constituting the metal oxide include both metal atoms at a maximum valence thereof and metal atoms at a valence less than the maximum valence. The metal oxide film includes a metal oxide crystal with a particle diameter on the order of nanometers.

Abstract: A compound for an organic optoelectronic device and an organic photoelectric device including the same are provided. A compound for an organic optoelectronic device represented by Chemical Formula 1 is provided to fabricate an organic photoelectric device having excellent electrochemical and thermal stability and life-span characteristics, and high luminous efficiency at a low driving voltage.

Abstract: In the organic EL illumination device including m (m is an integer greater than 1) series circuits each of which includes n (n is an integer greater than 1) organic EL panels connected in series, each of the organic EL panels is provided with one organic EL element, a positive electrode and a negative electrode, the m series circuits are connected in parallel between the positive electrode and the negative electrode, and among the organic EL panels in the m series circuits, the organic EL panels having the same place in series connections in the direction from the positive electrode to the negative electrode are connected with each other in parallel.

Abstract: A novel organic compound is suitable for emitting green light. An organic light-emitting device includes the novel organic compound.

Abstract: The present disclosure provides for electronic devices that use low cost, conductive materials as transparent conductors. The devices contain corrosion preventative conductive polymer layers and conductive innerlayer barriers that separate corrosive electrolyte from the conductors which are prone to corrosion and dissolution, while providing an uninterrupted electrical circuit. The present disclosure also allows for the use of layers which have been applied from aqueous media thereby reducing both the cost and the environmental impact of the electronic devices. Methods of manufacture are also provided.

Abstract: A flat panel display device with oxide thin film transistors and a fabricating method thereof are disclosed. The flat panel display device includes: a substrate; gate lines and data lines formed to cross each other and define a plurality of pixel regions on the substrate; the thin film transistors each including an oxide channel layer which is formed at an intersection of the gate and data lines; a pixel electrode and a common electrode formed in the pixel region with having a passivation layer therebetween; and step coverage compensation patterns formed at a step portion formed by the gate line and a gate electrode of the thin film transistor.

Abstract: A radiation-emitting component includes a semiconductor chip and a conversion element. The semiconductor chip includes an active layer suitable for generating electromagnetic radiation and a radiation exit face. The conversion element includes a matrix material and a luminescent material. The conversion element is arranged downstream of the radiation exit face of the semiconductor chip. The matrix material comprises at least 40 wt. % tellurium oxide and is free of boron trioxide and/or germanium oxide. A method for producing such a radiation-emitting component is furthermore stated.

Abstract: A flat panel display device with an oxide thin film transistor and a fabricating method thereof are disclosed. The fabricating method of the flat panel display device includes: preparing a substrate defined into a pixel region and a pad contact region; forming a gate electrode and a link line; forming a pixel electrode within the pixel region; forming an oxide layer on the substrate provided with the pixel electrode; forming a passivation layer on the substrate and performing a formation process of contact holes to expose the link line; and forming a second transparent conductive material film on the substrate.

Abstract: A semiconductor device which is miniaturized and has sufficient electrical characteristics to function as a transistor is provided. In a semiconductor device including a transistor in which a semiconductor layer, a gate insulating layer, and a gate electrode layer are stacked in that order, an oxide semiconductor film which contains at least four kinds of elements of indium, gallium, zinc, and oxygen, and in which the percentage of the indium is twice or more as large as each of the percentage of the gallium and the percentage of the zinc when the composition of the four elements is expressed in atomic percentage is used as the semiconductor layer. In the semiconductor device, the oxide semiconductor film is a film to which oxygen is introduced in the manufacturing process and contains a large amount of oxygen, and an insulating layer including an aluminum oxide film is provided to cover the transistor.

Abstract: Provided is a thin film transistor capable of improving reliability in the thin film transistor including an oxide semiconductor layer. A thin film transistor including: a gate electrode; a gate insulating film formed on the gate electrode; an oxide semiconductor layer forming a channel region corresponding to the gate electrode on the gate insulating film; a channel protective film formed at least in a region corresponding to the channel region on the oxide semiconductor layer; and a source/drain electrode. A top face and a side face of the oxide semiconductor layer are covered with the source/drain electrode and the channel protective layer on the gate insulating film.

Abstract: A source electrode and a drain electrode are formed by a stack of a titanium layer, a molybdenum nitride layer, an aluminum layer, and a molybdenum nitride layer, the titanium layer is formed by dry etching, and an oxide semiconductor layer is formed by performing annealing in an oxygen-containing atmosphere after formation of the source electrode and the drain electrode.

Abstract: A technique capable of promoting miniaturization of an RF power module used in a mobile phone etc. is provided. A directional coupler is formed inside a semiconductor chip in which an amplification part of the RF power module is formed. A sub-line of the directional coupler is formed in the same layer as a drain wire coupled to the drain region of an LDMOSFET, which will serve as the amplification part of the semiconductor chip. Due to this, the predetermined drain wire is used as a main line and the directional coupler is configured by a sub-line arranged in parallel to the main line via an insulating film, together with the main line.