Abstract: A negative electrode active material for an electric device includes an alloy containing silicon in a range from 27% by mass to 100% by mass exclusive, aluminum in a range from 0% by mass to 73% by mass exclusive, niobium in a range from 0% by mass to 58% by mass exclusive, and inevitable impurities as a residue. The negative electrode active material can be obtained with a multi DC magnetron sputtering apparatus by use of, for example, silicon, aluminum and niobium as targets. An electric device using the negative electrode active material can achieve a high cycle property while keeping a high discharge property.

Abstract: The present invention relates to a novel method for compatibilizing, i.e. improving miscibility of, otherwise immiscible organic materials highly useful in the fibers industry, as well as the compatibilized product of the method. These compatibilized products are stable in the liquid phase at temperatures ranging from about 40° C. to about 200° C. The method involves use of a glycol derived from polymerization of alkylene oxide and tetrahydrofuran, the alkylene oxide having from 2 to 4 carbon atoms, i.e. poly(tetramethylene-co-alkyleneether) glycol, in the mixture.

Abstract: Provided is a phosphor which comprises alkali earth ions, Si ion, N ion and Tb ion. Tb ion is used as a luminescence center. The phosphor has broad emission bands after excitation. The phosphor of the present invention can be used for a light emitting apparatus, and meets the need of the industrial application.

Abstract: The present invention relates to an inorganic nitride-based fluorescent material, comprising an inorganic fluorescent host material represented by the following formula (I): (M)xSiyNz:At ??(I) wherein, M is at least one metal selected from the group consisting of metals of IIA and IIIA, and x is from 1.0 to 3.0, and y is from 0.7 to 6.0, and z is from 1.0 to 9.0 and At is an activator; and a surface coating material is at least one metal oxide, metal hydroxide or metal carbonate, and the metal of the metal oxide, the metal hydroxide or the metal carbonate is selected from the group consisting of Mg, Ca, Sr, Ba, V, Cr, Mn, Fe, Co, Ni, Cu, La, Ga, In, Sn, Sb and Bi.

Abstract: Highly luminescent nanostructures, particularly highly luminescent quantum dots, are provided. The nanostructures have high photoluminescence quantum yields and in certain embodiments emit light at particular wavelengths and have a narrow size distribution. The nanostructures can comprise ligands, including C5-C8 carboxylic acid ligands employed during shell formation and/or dicarboxylic or polycarboxylic acid ligands provided after synthesis. Processes for producing such highly luminescent nanostructures are also provided, including methods for enriching nanostructure cores with indium and techniques for shell synthesis.

Abstract: A gasification reactor comprising a gasifier with a tubular gastight wall arranged within a pressure vessel. The gasification reactor comprises one or more pressure responsive devices comprising a sleeve with a cooled section extending outwardly from an opening in the gastight wall. The pressure responsive devices can, e.g., include a pressure measurement device and/or a pressure equalizer. Method of using a pressure responsive device with such a gasifier, wherein a heat sluice is used formed by a sleeve with a cooled section extending outwardly from an opening in the gastight wall.

Abstract: The invention relates to a catalytic high-pressure process for the CO2 reforming of hydrocarbons, preferably methane, in the presence of iridium-comprising active compositions and also a preferred active composition in which Ir is present in finely dispersed form on zirconium dioxide-comprising support material. The predominant proportion of the zirconium dioxide preferably has a cubic and/or tetragonal structure and the zirconium dioxide is more preferably stabilized by means of at least one doping element. In the process of the invention, reforming gas is brought into contact at a pressure of greater than 5 bar, preferably greater than 10 bar and more preferably greater than 20 bar, and a temperature which is in the range from 600 to 1200° C., preferably in the range from 850 to 1100° C. and in particular in the range from 850 to 950° C., and converted into synthesis gas.

Abstract: A method of starting up an autothermal reactor for the production of synthesis gas by reforming of hydrocarbon-containing feed gases in a reaction chamber in which oxidation reactions and reforming reactions are carried out, by feeding a hydrocarbon containing feed gas, steam and an oxidant.

Abstract: A polyamide-imide resin composition according to embodiment of the present invention, including a polyamide-imide resin obtained by causing acid components (A) containing a dimer acid and a polyisocyanate component (B) to react with each other, wherein a ratio of the dimer acid in the acid components (A) is 3 mol % to 55 mol %.

Abstract: Provided are thermo-sensitive and light-sensitive polymer compositions including poly(4-vinyl pyridine) and poly(4-vinyl pyridine-co-butyl methacrylate).

Abstract: The invention relates to novel polymers containing one or more pyrrolo[3,2-b]pyrrole-2,5-dione repeating units, methods for their preparation and monomers used therein, blends, mixtures and formulations containing them, the use of the polymers, blends, mixtures and formulations as semiconductor in organic electronic (OE) devices, especially in organic photovoltaic (OPV) devices, and to OE and OPV devices comprising these polymers, blends, mixtures or formulations.

Abstract: A method is provided to synthesize nanocomposites containing intercalated FeF2— or Fe2O3-nanoparticles in a graphitic carbon matrix by reaction of a volatile iron compound with a graphite fluoride (CFx) or a graphite oxide (COx). Additionally provided is a nanocomposite material containing intercalated FeF2— or Fe2O3-nanoparticles in a graphitic carbon matrix and its use as an electrochemically active material in particular for use in electrochemical storage cells.

Abstract: An active material that can achieve sufficient discharge capacity at high discharging rate, an electrode including the active material, and a lithium ion secondary battery including the electrode, and a method for manufacturing the active material are provided. The active material includes a LiVOPO4 powder, a first carbon powder, and a second carbon powder. A relational expression of 0.05?A1/A2?0.5 is satisfied, where A1 represents the ratio of the G band peak height observed around 1580 cm?1 in Raman spectrum of the first carbon powder to the 2D band peak height observed around 2700 cm?1 in the Raman spectrum of the first carbon powder, and A2 represents the ratio of the G band peak height observed around 1580 cm?1 in Raman spectrum of the second carbon powder to the 2D band peak height observed around 2700 cm?1 in the Raman spectrum of the second carbon powder.

Abstract: The present invention relates to a composition for a one-part die attach adhesives material useful for packaging semi-conductors including HB-LED. The composition of the present invention includes a thermal and electrical conductive filler, a polymer matrix and a solvent which form a material with high thermal conductivity, low curing temperature and high self-life temperature. The present invention also relates to a method of preparing said composition by mixing a size-selected and surface-modified filler formulation, a polymer matrix and a non-reactive organic solvent together followed by curing the mixture at a low temperature.

Abstract: Disclosed herein are the methods to improve the electrical conductivity for micro-moulded plastic parts containing carbon nanotubes. The polymer/carbon nanotubes composites suitable for polymer micromoulding including 80˜99.95 wt % of a polymer pellet or powder, 0-2 wt % of antioxidant, 0-2 wt % of dispersant agent and 0.05-20 wt % of carbon nanotube with a diameter 0.5-200 nm and a length of 200 nm-20 ?m are firstly prepared through melt extrusion. The plastic microparts are prepared by micromoulding of the polymer/carbon nanotubes composites including micro extrusion, micro injection and hot embossing at optimized processing conditions and then are subject to a post thermal treatment to enhance the electrical conductivity. The post thermal treatment methods include electric heating, microwave, infrared or plasma heating.

Abstract: A method for producing and/or processing polymer/carbon nanotube mixtures in powder form comprises the step of grinding a mixture comprising carbon nanotubes and polymer particles. The grinding is carried out in the presence of from ?0 weight-% to ?15 weight-%, expressed in terms of the total weight of the mixture, of a liquid phase which does not dissolve the polymer particles and at a temperature below the melting point of the powder particles. The energy input during the grinding is preferably low. A preferred polymer is PVDF. The invention furthermore relates to polymer/carbon nanotube mixtures which can be obtained by a method according to the invention, and to the use of such polymer/carbon nanotube mixtures for the production of electrodes.

Abstract: The present invention relates to a graphene-based hybrid polymer composite fiber and a method for manufacturing same, and more particularly, to a hybrid composite fiber including the graphene, a carbon nanotube, and a polymer, wherein the graphene and the carbon nanotube are combined by means of self-organization through hydrogen bonding, so as to be very tough and flexible, without involving stretching, and to a method for manufacturing the hybrid composite fiber.

Abstract: Provided are a method of isolating and purifying metal nanowires from a crude and complex reaction mixture that includes relatively high aspect ratio nanostructures as well as nanostructures of low aspect ratio shapes, and conductive films made of the purified nanostructures.

Abstract: A light-reflective anisotropic conductive adhesive used for anisotropic conductive connection of a light-emitting element to a wiring substrate includes a thermosetting resin composition, conductive particles, and light-reflective insulating particles. The light-reflective insulating particles are formed by subjecting titanium oxide particles to a surface treatment with one kind selected from the group consisting of Al2O3, SiO, SiO2, ZnO, ZnO2, and ZrO2. The amount of the titanium oxide contained in the light-reflective insulating particles is 85 to 93%. The particle diameter of the light-reflective insulating particles is 0.2 to 0.3 ?m, and the particle diameter of the conductive particles is 2 to 10 ?m.

Abstract: A method for the synthesis of new metal based metal nanoparticles by the combination of conducting polymers and room temperature ionic liquids to produce nanoparticle electro-catalysts with very high catalytic activity and controllable size and high surface area to volume ratios.

Abstract: Systems and methods for fabricating nanostructures using other nanostructures as templates. A method includes mixing a dispersion and a reagent solution. The dispersion includes nanostructures such as nanowires including a first element such as copper. The reagent solution includes a second element such as silver. The second element at least partially replaces the first element in the nanostructures. The nanostructures are optionally washed, filtered, and/or deoxidized.

Abstract: A composition of a silver-conjugated compound composite containing (1) a silver-conjugated compound composite containing a silver particle with a Feret diameter of 1,000 nm or less and a conjugated compound having a weight average molecular weight of 3.0×102 or more being adsorbed to the silver particles and (2) an ionic compound. The ionic compound may be a compound having a structure represented by the following Formula (hh-1): [Chem. 1] Mm?+aX?n??b??(hh-1) wherein Mm?+ represents a metal cation, X?n?? represents an anion, a and b each independently represent an integer of 1 or more, and when Mm?+ and X?n?? are each plurally present, they may be the same as or different from each other.

Abstract: There is provided a benzocyclobutene compound represented by Formula (1) where n is an integer from 0 to 2, R1 and R2 are each independently selected from a hydrogen atom and a saturated hydrocarbon group having 1 to 5 carbon atoms, and A is selected from a direct bond and a substituted or unsubstituted chain saturated divalent hydrocarbon group having 1 to 20 carbon atoms.

Abstract: The present invention relates to a magneto-optical ceramic material which is characterized by being configured of an oxide ceramic that is mainly composed of an oxide that is represented by formula (1): (TbxRe1-x)2O, (wherein Re represents at least one element that is selected from among scandium, yttrium, lanthanum, europium, gadolinium, ytterbium, holmium and lutetium, and 0.4?x?1.0). The magneto-optical ceramic material is also characterized in that the difference between the refractive index at the grain boundary and the refractive index of the main phase of the oxide ceramic crystal at 25° C. is 0.004 or less. The present invention is capable of reliably providing a magneto-optical ceramic material for Faraday rotators of optical isolators and the like, said magneto-optical ceramic material having good polarization state and large extinction ratio, and enables size reduction of an optical isolator that is used for fiber laser for processing machines.

Abstract: A device, system, and associated methods for appliance lifts are disclosed. The appliance lift sits on the bottom of a cabinet, rolls forward and rotates forward and up using four rotating bars and a gear with spring and damper linking them together. This system consists of a platform dimensioned of a size and shape to support most kitchen counter-top appliances or any other like sized items. The platform is supported by a series of linkages housed in a frame. The frame is then on a moveable track. The entire structure is sized to fit inside the lower section of a standard kitchen cabinet.

Abstract: A hammer includes a handle and a head. The handle includes a bottom end and an upper end. The head is disposed on the upper end of the handle. The handle and the head are separately formed structures. The handle is formed from sheet metal.

Abstract: A winch includes a motor having a motor housing including a motor case and an integrated first drum support attached to the motor case for closing an end of the motor case. A gear reduction unit is drivingly attached to the motor and has a gear housing including a gear case and second drum support attached to the gear case. A tie plate is connected to the first and second drum supports. A control unit is removably mounted to the tie plate. A rotatable drum is supported by the first and second drum supports.

Abstract: A fairlead assembly includes a frame structure having an opening therein. A pair of rollers are disposed on opposite sides of the opening. The frame structure includes a pair of opposed curved surfaces disposed between the end portions of the pair of rollers and defining a bordering surface of the opening. The frame can be cast as a unitary structure with the pair of rollers each rotatably supported by a support pin having opposite ends received in a first set of corresponding semi-cylindrical recesses in a surface of the cast frame. A clamp structure having a second set of corresponding semi-cylindrical recesses secure the support pins to the cast frame.

Abstract: A resistive memory device is provided that includes a barrier layer in between two metal oxide layers. The barrier layer prevents free flow of oxygen ions between the two metal oxide layers in order to increase the retention period for the data stored in the memory device.

Abstract: This disclosure provides a method of fabricating a semiconductor device layer and associated memory cell structures. By performing a surface treatment process (such as ion bombardment) of a semiconductor device layer to create defects having a deliberate depth profile, one may create multistable memory cells having more consistent electrical parameters. For example, in a resistive-switching memory cell, one may obtain a tighter distribution of set and reset voltages and lower forming voltage, leading to improved device yield and reliability. In at least one embodiment, the depth profile is selected to modulate the type of defects and their influence on electrical properties of a bombarded metal oxide layer and to enhance uniform defect distribution.

Abstract: This disclosure provides a nonvolatile memory device and related methods of manufacture and operation. The device may include one or more resistive random access memory (ReRAM) approaches to provide a memory device with more predictable operation. In particular, the forming voltage required by particular designs may be reduced through the use of a barrier layer, a reverse polarity forming voltage pulse, a forming voltage pulse where electrons are injected from a lower work function electrode, or an anneal in a reducing environment. One or more of these techniques may be applied, depending on the desired application and results.

Abstract: A disclosed method of fabricating a hybrid nanopillar device includes forming a mask on a substrate and a layer of nanoclusters on the hard mask. The hard mask is then etched to transfer a pattern formed by the first layer of nanoclusters into a first region of the hard mask. A second nanocluster layer is formed on the substrate. A second region of the hard mask overlying a second region of the substrate is etched to create a second pattern in the hard mask. The substrate is then etched through the hard mask to form a first set of nanopillars in the first region of the substrate and a second set of nanopillars in the second region of the substrate. By varying the nanocluster deposition steps between the first and second layers of nanoclusters, the first and second sets of nanopillars will exhibit different characteristics.

Abstract: Methods for passivating a carbonic nanolayer (that is, material layers comprised of low dimensional carbon structures with delocalized electrons such as carbon nanotubes and nanoscopic graphene flecks) to prevent or otherwise limit the encroachment of another material layer are disclosed. In some embodiments, a sacrificial material is implanted within a porous carbonic nanolayer to fill in the voids within the porous carbonic nanolayer while one or more other material layers are applied over or alongside the carbonic nanolayer. Once the other material layers are in place, the sacrificial material is removed. In other embodiments, a non-sacrificial filler material (selected and deposited in such a way as to not impair the switching function of the carbonic nanolayer) is used to form a barrier layer within a carbonic nanolayer. In other embodiments, carbon structures are combined with and nanoscopic particles to limit the porosity of a carbonic nanolayer.

Abstract: A light-emitting diode structure and a manufacturing method thereof are provided. The structure includes a semiconductor substrate, a first type semiconductor layer, a light-emitting layer, a second type semiconductor layer, an electrode contact layer, a positive electrode and a negative electrode. A stacking layer consisting of the first type semiconductor layer, the light-emitting layer, the second type semiconductor layer and the electrode contact layer is formed on the semiconductor substrate, and a first opening penetrates the electrode contact layer and exposes a part of the second type semiconductor layer. The positive electrode is formed in the first opening. A part of the first type semiconductor layer, the light-emitting layer, the second type semiconductor layer and the electrode contact layer is removed to form a platform structure. The negative electrode is formed on the exposed surface of the first type semiconductor layer.

Abstract: Electroluminescent devices, methods of forming the same, and methods of generating light using the same are provided. An electroluminescent device can include an active layer and at least one p-n junction in physical contact with the active layer. Each p-n junction can include a p-type semiconductor layer and an n-type semiconductor layer.

Abstract: A population of bright and stable nanocrystals is provided. The nanocrystals include a semiconductor core and a thick semiconductor shell and can exhibit high extinction coefficients, high quantum yields, and limited or no detectable blinking.

Abstract: Nanostructures are joined using one or more of a variety of materials and approaches. As consistent with various example embodiments, two or more nanostructures are joined at a junction between the nanostructures. The nanostructures may touch or be nearly touching at the junction, and a joining material is deposited and nucleates at the junction to couple the nanostructures together. In various applications, the nucleated joining material facilitates conductivity (thermal and/or electric) between the nanostructures. In some embodiments, the joining material further enhances conductivity of the nanostructures themselves, such as by growing along the nanostructures and/or doping the nanostructures.

Abstract: A semiconductor device includes a buffer structure on a silicon substrate, and at least one gallium nitride-based semiconductor layer on the buffer structure. The buffer structure includes a plurality of nitride semiconductor layers and a plurality of stress control layers that are alternately disposed with the plurality of nitride semiconductor layer. The plurality of stress control layers include a IV-IV group semiconductor material.

Abstract: The present disclosure is directed to an integrated circuit and a method for the fabrication of the integrated circuit. The integrated circuit includes a lattice matching structure. The lattice matching structure can include a first buffer region, a second buffer region and a superlattice structure formed from AlxGa1?xN/AlyGa1?yN layer pairs.

Abstract: A carbon-based semiconductor device includes a substrate, source/drain contacts, a graphene channel, a dielectric layer, and a gate. The source/drain contacts are formed on the substrate. The graphene channel is formed on the substrate connecting the source contact and the drain contact. The dielectric layer is formed on the graphene channel with a molecular beam deposition process. The gate contact is formed over the graphene channel and on the dielectric. The gate contact is in a non-overlapping position with the source and drain contacts leaving exposed sections of the graphene channel between the gate contact and the source and drain contacts.

Abstract: A nanowire device having a plurality of internal spacers and a method for forming said internal spacers are disclosed. In an embodiment, a semiconductor device comprises a nanowire stack disposed above a substrate, the nanowire stack having a plurality of vertically-stacked nanowires, a gate structure wrapped around each of the plurality of nanowires, defining a channel region of the device, the gate structure having gate sidewalls, a pair of source/drain regions on opposite sides of the channel region; and an internal spacer on a portion of the gate sidewall between two adjacent nanowires, internal to the nanowire stack. In an embodiment, the internal spacers are formed by depositing spacer material in dimples etched adjacent to the channel region. In an embodiment, the dimples are etched through the channel region. In another embodiment, the dimples are etched through the source/drain region.

Abstract: A fused ring compound represented by Formula 1: In Formula 1, X1, X2, Y1 to Y6, Ar1 to Ar3, R1 to R11, L1 to L3, a, b, and c are as defined in the specification.

Abstract: Embodiments of the present invention are directed to a compound represented by Formula 1 below and an organic light-emitting device including the compound.

Abstract: An organic light-emitting device includes an emission layer between first and second electrodes, a first hole transport layer that is between the emission layer and the first electrode and that includes a first hole transport compound and a first electron acceptor, a second hole transport layer that is between the emission layer and first hole transport layer and that includes a second hole transport compound, a third hole transport layer that is between the emission layer and the second hole transport layer and that includes a third hole transport compound and a second electron acceptor, a fourth hole transport layer that is between the emission layer and the third hole transport layer and that includes a fourth hole transport compound, a buffer layer between the emission layer and the fourth hole transport layer, and an electron transport layer that includes a pyrimidine-based compound.

Abstract: An organic light emitting diode (OLED) display is disclosed. In one aspect, the OLED display includes: i) gate wires positioned on a substrate in a first direction, ii) data wires positioned on the gate wires in a second direction crossing the first direction, iii) a pixel circuit including first thin film transistors respectively connected to the gate wires and the data wires and iii) an OLED connected to the pixel circuit. The first thin film transistor may also include a first active layer interconnecting the data wires and the OLED and including a channel region and source and drain regions doped with an impurity, and a first gate electrode positioned over the first active layer with first and second insulation layers sequentially interposed therebetween, wherein the second insulation layer is positioned on the channel region.

Abstract: A material for organic electroluminescence device having a specific central skeleton to which a cyano-substituted aromatic hydrocarbon group or a cyano-substituted heterocyclic group is bonded at its specific position is described. Further described is an organic electroluminescence device including an organic thin film layer between an anode and a cathode. The organic thin film layer include an light emitting layer and at least one layer of the organic thin film layer contains the material for organic electroluminescence device. The material for organic electroluminescence device realizes an organic electroluminescence device with good emission efficiency.

Abstract: An OLED device includes a substrate including first through fourth sub-pixel regions arranged in a quad type, a first electrode disposed on each of the first through fourth sub-pixel regions, a first functional layer disposed on all the first through fourth sub-pixel regions and configured to emit first color light, a second functional layer formed in a stripe shape, which progresses along the second and fourth sub-pixel regions arranged in a row direction, and configured to emit second color light, a third functional layer formed in another stripe shape, which progresses along the third and fourth sub-pixel regions arranged in a column direction, and configured to emit third color light, and a second electrode disposed on the entire surface of the substrate including the first through third functional layers.

Abstract: An organic EL device includes: a first electrode; a second electrode, an organic compound layer having an emitting layer, a light-transmissive substrate, a first luminous intensity distribution converter, and a second luminous intensity distribution converter. The first luminous intensity distribution converter has a first convexo-concave structure and converts a luminous intensity distribution for a light flex of an angular component larger than a total reflection angle to account for 20% or more of a total light flux of a radiation light emitted from the emitting layer in the light-transmissive substrate, the total reflection angle being defined by a refractive index of a material forming the light-transmissive substrate and a refractive index of a material forming the first luminous intensity distribution converter.

Abstract: The present invention relates to a novel triscarbazole compound having substituent on N-phenyl, which can be represented by Formula (I). wherein R1 is selected from the group consisting of hydrogen, halogen or alkyl or alkoxy group having 1 to 20 carbon atoms wherein at least one hydrogen atom is optionally replaced by halogen; RA, RB, RC, RD and RE are any of substituents other than hydrogen wherein at least two of R1 and RA may further form a fused ring; and i, j, k, l and m are same or different at each occurrence and represent an integer from 0 to 4, with the proviso that when R1 is hydrogen, i is not 0. By introduction of the substituent on N-phenyl, the device efficiency, stability and lifetime can be increased while maintaining the solubility. These compounds can be used in various organic devices such as organic light emitting diodes, photovoltaic cells or organic semiconductor devices.

Abstract: An organic light emitting diode and a method for manufacturing the same. The organic light emitting diode includes an anodic conductive layer, an organic EL layer, and a cathodic conductive layer formed from Ag or an alloy of Ag, or the like, sequentially laminated on a substrate, such that a two-dimensional lattice structure is provided on a surface of the cathodic conductive layer on an organic EL layer side, an extraction wavelength and a distance between centers of concave portions or convex portions in the two-dimensional lattice structure are within a region surrounded by specific coordinates in a graph illustrating a relationship between the light extraction wavelength and the distance, and the depth of the concave portions or a height of the convex portions is 12 nm to 180 nm.