Patents Issued in September 30, 2014
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Patent number: 8847200Abstract: A memory cell is provided, the memory cell including a steering element having a vertically-oriented p-i-n junction, and a carbon nanotube fabric. The steering element and the carbon nanotube fabric are arranged electrically in series, and the entire memory cell is formed above a substrate. Other aspects are also provided.Type: GrantFiled: July 14, 2011Date of Patent: September 30, 2014Assignee: SanDisk 3D LLCInventors: Scott Brad Herner, Roy E. Scheuerlein
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Patent number: 8847201Abstract: Provided are quantum dots having a gradual composition gradient shell structure which have an improved luminous efficiency and optical stability, and a method of manufacturing the quantum dots in a short amount of time at low cost. In the method, the quantum dots can be manufactured in a short amount of time at low cost using a reactivity difference between semiconductor precursors, unlike in uneconomical and inefficient conventional methods where shells are formed after forming cores and performing cleaning and redispersion processes. Also, formation of the cores is followed by formation of shells having a composition gradient.Type: GrantFiled: August 20, 2012Date of Patent: September 30, 2014Assignee: SNU R&DB FoundationInventors: Kookheon Char, Seong Hoon Lee, Wan Ki Bae, Hyuck Hur
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Patent number: 8847202Abstract: A dual-band infrared detector structure based on Type-II superlattices (T2SL) has been developed and experimentally validated. The structure according to the principles of the present invention is designed for a single Indium bump architecture and utilizes a T2SL barrier design that omits the traditional p-n junction region. The barrier design comprises multiple periods where each period comprises multiple monolayers doped P type. By selecting the composition, number of monolayers per period and number of periods, a transition region is created in the conduction band between a first absorber layer and a second absorber layer that allows operation at low biases (<100 mV for both bands) and exhibits a dark current density in the longer wavelength band comparable to that obtained with single-color detectors.Type: GrantFiled: January 17, 2012Date of Patent: September 30, 2014Assignee: HRL Laboratories, LLCInventors: Brett Z. Nosho, Rajesh D. Rajavel, Hasan Sharifi, Sevag Terterian
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Patent number: 8847203Abstract: A Group III nitride epitaxial laminate substrate comprising a substrate, a buffer and a main laminate in this order, wherein the buffer includes an initial growth layer, a first superlattice laminate and a second superlattice laminate in this order, the first superlattice laminate includes five to 20 sets of first AlN layers and second GaN layers, the first AlN layers and the second GaN layers being alternately stacked, and each one set of the first AlN layer and the second GaN layer has a thickness of less than 44 nm, the second superlattice laminate includes a plurality of sets of first layers made of an AlN material or an AlGaN material and second layers made of an AlGaN material having a different band gap from the first layers, the first and second layers being alternately stacked.Type: GrantFiled: November 4, 2010Date of Patent: September 30, 2014Assignee: Dowa Electronics Materials Co, Ltd.Inventors: Tetsuya Ikuta, Jo Shimizu, Tomohiko Shibata
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Patent number: 8847204Abstract: This invention provides a germanium electroluminescence device and a fabricating method of the same for using germanium of an indirect bandgap semiconductor without modifying a bandgap as a light-emitting layer which emits a 1550 nm-wavelength light and enabling to use not only as infrared LEDs itself but also as light sources for optical communication systems.Type: GrantFiled: February 26, 2013Date of Patent: September 30, 2014Assignees: Seoul National University R&DB Foundation, The Board of Trustees of the Leland Standford Junior UniversityInventors: Byung-Gook Park, James S. Harris, Jr., Seongjae Cho
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Patent number: 8847205Abstract: By reducing a deposition rate and maintaining a low bias power in a plasma atmosphere, a spacer layer, for example a silicon nitride layer, may be deposited that exhibits tensile stress. The amount of tensile stress is controllable within a wide range, thereby providing the potential for forming sidewall spacer elements that modify the charge carrier mobility and thus the conductivity of the channel region of a field effect transistor.Type: GrantFiled: September 11, 2013Date of Patent: September 30, 2014Assignee: GLOBALFOUNDRIES Inc.Inventors: Hartmut Ruelke, Katja Huy, Markus Lenski
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Patent number: 8847206Abstract: Disclosed is a surface modifying agent including a compound having an ethynyl group at one terminal end, a laminated structure manufactured using the surface modifying agent, a method of manufacturing the laminated structure, and a transistor including the same.Type: GrantFiled: February 12, 2010Date of Patent: September 30, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Jeong-il Park, Byung-wook Yoo, Do-hwan Kim, Sang-yoon Lee, Bang-lin Lee, Eun-jeong Jeong
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Patent number: 8847207Abstract: A semiconductor device includes first layer wiring including a gate electrode mounted on a substrate; a gate insulating film having an opening that exposes part of the first layer wiring and covering the entire surface of the substrate including the gate electrode; second layer wiring including a source electrode and a drain electrode mounted on the gate insulating film; an insulating partition layer having a first opening that exposes an edge between the source electrode and the drain electrode and a part of the gate insulating film between the source electrode and the drain electrode and a second opening that is aligned with the opening formed in the gate insulating film; and an organic semiconductor layer disposed across the source electrode and the drain electrode at the bottom surface of the first opening formed in the partition layer.Type: GrantFiled: April 16, 2010Date of Patent: September 30, 2014Assignee: Sony CorporationInventor: Nobuhide Yoneya
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Patent number: 8847208Abstract: Provided is a photoelectric conversion device comprising a transparent electrically conductive film, a photoelectric conversion film, and an electrically conductive film, wherein the photoelectric conversion film contains a compound represented by the following formula (i): wherein each of R2 to R9 independently represents a hydrogen atom or a substituent, provided that each of at least two out of R3, R4, R7 and R8 independently represents an aryl group, a heterocyclic group or —N(Ra)(Rb), each of Ra and Rb independently represents a hydrogen atom or a substituent, and at least either Ra or Rb represents an aryl group or a heterocyclic group; and R1 represents an alkyl group, an aryl group or a heterocyclic group.Type: GrantFiled: June 3, 2010Date of Patent: September 30, 2014Assignee: FUJIFILM CorporationInventors: Tetsuro Mitsui, Kimiatsu Nomura, Katsuyuki Yofu
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Patent number: 8847209Abstract: The present invention provides a memory device and a semiconductor device which have high reliability for writing at low cost. Furthermore, the present invention provides a memory device and a semiconductor device having a non-volatile memory element in which data can be additionally written and which can prevent forgery due to rewriting and the like. The memory element includes a first conductive layer, a second conductive layer, and an organic compound layer, which is formed between the first conductive layer and the second conductive layer, and which has a photosensitized oxidation reduction agent which can be an excited state by recombination energy of electrons and holes and a substance which can react with the photosensitized oxidation reduction agent.Type: GrantFiled: April 13, 2011Date of Patent: September 30, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Mikio Yukawa
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Patent number: 8847210Abstract: An organic light emitting diode (OLED) display includes: a substrate; a first electrode on the substrate; a first emission layer on the first electrode; a second emission layer on the first emission layer; a second electrode on the second emission layer; and a light emitting assistance layer selectively positioned between the first emission layer and the second emission layer.Type: GrantFiled: September 20, 2011Date of Patent: September 30, 2014Assignee: Samsung Display Co., Ltd.Inventors: Hee-Joo Ko, Se-Jin Cho, Chang-Ho Lee, Il-Soo Oh, Hyung-Jun Song, Jin-Young Yun, Bo-Ra Lee, Young-Woo Song, Jong-Hyuk Lee, Sung-Chul Kim
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Patent number: 8847211Abstract: A problem of the present invention is to provide a device having good characteristics and long life, wherein a functional thin film is formed in a desired region by a coating method; a thin film transistor; a method for producing the device; and a method for producing the thin film transistor. This problem can be solved by a device comprising: a substrate, a first electrode formed on the substrate, a functional thin film formed above the first electrode, and a second electrode disposed above the functional thin film, characterized by further comprising, in a region surrounding the region where the functional thin film is formed, a film containing a compound in which a group containing fluorine and a ?-conjugated system are bound together by a cycloalkene structure or a cycloalkane structure.Type: GrantFiled: November 18, 2010Date of Patent: September 30, 2014Assignees: Panasonic Corporation, Sumitomo Chemical Company, LimitedInventors: Seiji Shinkai, Shuichi Haraguchi, Tomohiro Shiraki, Masashi Ogawa, Shuhei Nakatani, Kei Sakanoue, Osamu Goto, Hidenobu Kakimoto
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Patent number: 8847212Abstract: An OLED device comprises an anode, a hole transport layer, a luminance layer, an electron transport layer and a cathode. Molecules of film materials of forming the carrier transport layer all stand upright on the electrodes. A long axis of the molecule is perpendicular to the electrodes. There forms vertical conjugated planes between the molecules of each molecule layer in the film. These conjugated planes are parallel to each other and perpendicular to the electrodes. Therefore, the carrier transportation of the OLED device of the present invention mainly relies on the conjugated bonds in the molecules, but not the transition between the molecules, thereby efficiently improving the carrier mobility, reducing the working pressure and the power consumption of the OLED device, and improving the performance of the OLED device.Type: GrantFiled: August 14, 2012Date of Patent: September 30, 2014Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd.Inventor: Xiaohu Zhao
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Patent number: 8847213Abstract: An organic light-emitting display apparatus includes a substrate, a display disposed on the substrate, an opposite substrate disposed to face the substrate with the display therebetween, a seal disposed between the substrate and the opposite substrate to couple the substrate to the opposite substrate and arranged around an outer circumference of the display such that the display is located inside the seal, and a support disposed between the substrate and the opposite substrate and arranged around a corner of the seal so that the corner of the seal is located inside the support.Type: GrantFiled: October 11, 2012Date of Patent: September 30, 2014Assignee: Samsung Display Co., Ltd.Inventors: Dong-Yoon So, Ji-Eun Kim, Han-Soo Kim, Seon-Hee Kim
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Patent number: 8847214Abstract: Disclosed herein is a display including: a pixel array part configured to include pixels that are arranged in a matrix and each have an electro-optical element, a write transistor for writing a video signal, a drive transistor for driving the electro-optical element based on the video signal written by the write transistor, and a holding capacitor connected between gate and source of the drive transistor, wherein the holding capacitor includes a first electrode, a second electrode disposed to face one surface of the first electrode for forming a first capacitor, and a third electrode disposed to face the other surface of the first electrode for forming a second capacitor, and the first capacitor and the second capacitor are connected in parallel to each other electrically.Type: GrantFiled: December 10, 2012Date of Patent: September 30, 2014Assignee: Sony CorporationInventors: Hiroshi Sagawa, Katsuhide Uchino, Tetsuro Yamamoto
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Patent number: 8847215Abstract: An organic light-emitting diode includes an anode on a substrate; a first hole transporting layer on the anode; a second hole transporting layer on the first hole transporting layer and corresponding to the red and green pixel areas; a first emitting material pattern of a first thickness on the second hole transporting layer and corresponding to the red pixel area; a second emitting material pattern of a second thickness on the second hole transporting layer and corresponding to the green pixel area; a third emitting material pattern of a third thickness on the first hole transporting layer and corresponding to the blue pixel area; an electron transporting layer on the first, second and third emitting material patterns; and a cathode on the electron transporting layer, wherein the second thickness is less than the first thickness and greater than the third thickness.Type: GrantFiled: December 21, 2012Date of Patent: September 30, 2014Assignee: LG Display Co., Ltd.Inventors: Jin-Ho Park, Kwang-Hyun Kim, Min-Na Kim
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Patent number: 8847216Abstract: Disclosed is an organic light emitting display device. The organic light emitting display device includes a substrate, a thin film transistor formed on the substrate, a first electrode formed on the thin film transistor, an organic emission layer, and a second electrode formed on the organic emission layer. The organic emission layer includes a first stack that includes a first emission layer formed on the first electrode to emit first color light, a second stack that includes a second emission layer formed on the first electrode to emit second color light, and a charge generation layer formed between the first and second stacks.Type: GrantFiled: December 21, 2012Date of Patent: September 30, 2014Assignee: LG Display Co., Ltd.Inventors: Hwa Kyung Kim, Chang Wook Han, Do Hyung Kim, Hongseok Choi, Yoon Heung Tak, Ki-Woog Song, Mi-Young Han, Jimin Kim, Hye Min Oh
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Patent number: 8847217Abstract: To increase light-extraction efficiency and simplify manufacturing process. An organic EL panel includes: first electrode reflecting incident light; second electrode transmitting incident light therethrough; organic light-emitting layer emitting light of corresponding color among R, G, and B colors; first functional layer including charge injection/transport layer and at least one other layer, and disposed between the first electrode and the light-emitting layer; and second functional layer disposed between the second electrode and the light-emitting layer. The charge injection/transport layers of R, G, and B colors differ in film thickness, the at least one other layers of R, G, and B colors are equal in film thickness to one another, the second functional layers of R, G, and B colors are equal in film thickness to one another, and the light-emitting layers of R and G colors are equal in film thickness, and differ in film thickness from the light-emitting layer of B color.Type: GrantFiled: November 24, 2010Date of Patent: September 30, 2014Assignee: Panasonic CorporationInventors: Keiko Kurata, Noriyuki Matsusue, Kazuhiro Yoneda
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Patent number: 8847218Abstract: An organic electroluminescence device includes a pair of electrodes and an organic compound layer interposed therebetween. The organic compound layer includes a plurality of emitting layers including a first emitting layer and a second emitting layer, in which at least one of the first and second emitting layers contains a phosphorescent dopant material, and a space layer between the first and second emitting layers. The space layer contains a compound satisfying a relationship of the following numerical formula (1) in terms of a difference ?ST between singlet energy EgS and an energy gap Eg77K at 77K, [Numerical Formula 1] ?ST=EgS?Eg77K?0.5 (eV)??(1).Type: GrantFiled: January 20, 2012Date of Patent: September 30, 2014Assignee: Idemitsu Kosan Co., Ltd.Inventors: Kazuki Nishimura, Yukitoshi Jinde, Toshinari Ogiwara, Tetsuya Inoue, Chishio Hosokawa
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Patent number: 8847219Abstract: A color conversion film that absorbs light from an organic electroluminescent part emitting blue-green light and converts the light to visible light at a longer wavelength. The color conversion film includes two different dyes. A first dye is a polymer dye with an average molecular weight of 1000 to 1,000,000 that absorbs light incident on the color conversion film and transfers the energy of the light to a second dye. The second dye is a dye that receives the energy from the first dye and emits light. With a multicolor-emitting, organic electroluminescent device including the color conversion film, it is possible to achieve excellent conversion efficiency without increasing the thickness of the color conversion film as in a conventional device using a binder resin. Such an organic electroluminescent device may include as well a pair of electrodes at least one of which is a transparent electrode, and an organic electroluminescent layer sandwiched between the electrodes.Type: GrantFiled: September 23, 2013Date of Patent: September 30, 2014Assignee: Sharp Kabushiki KaishaInventors: Toshio Hama, Masaru Nagai, Chong Li, Koji Kawaguchi, Yuko Nakamata, Naoyuki Kanai
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Patent number: 8847220Abstract: A semiconductor device including an oxide semiconductor can have stable electric characteristics and high reliability. A transistor in which an oxide semiconductor layer containing indium, titanium, and zinc is used as a channel formation region and a semiconductor device including the transistor are provided. As a buffer layer in contact with the oxide semiconductor layer, a metal oxide layer containing an oxide of one or more elements selected from titanium, aluminum, gallium, zirconium, hafnium, and a rare earth element can be used.Type: GrantFiled: July 6, 2012Date of Patent: September 30, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Shunpei Yamazaki
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Patent number: 8847221Abstract: A stacked semiconductor device includes: an internal circuit; a through electrode provided to penetrate through a semiconductor substrate; a test wiring to which a predetermined potential different from a substrate potential is supplied at a time of a test; a first switch arranged between the through electrode and the internal circuit; a second switch arranged between the through electrode and the test wiring; and a control circuit that exclusively turns on the first and the second switches. Thereby, it becomes possible to perform an insulation test in a state that the through electrode and the internal circuit are cut off. Thus, even when a slight short-circuit that does not lead to a current defect occurs, the short circuit can be detected.Type: GrantFiled: October 11, 2007Date of Patent: September 30, 2014Assignee: PS4 Luxco S.A.R.L.Inventor: Kayoko Shibata
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Patent number: 8847222Abstract: Semiconductor device test structures and methods are disclosed. In a preferred embodiment, a test structure includes a feed line, a stress line disposed proximate the feed line, and a conductive feature disposed between the stress line and the feed line. The test structure includes a temperature adjuster proximate at least the conductive feature, and at least one feedback device coupled to the temperature adjuster and at least the conductive feature.Type: GrantFiled: October 28, 2010Date of Patent: September 30, 2014Assignee: Infineon Technologies AGInventor: Wolfgang Walter
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Patent number: 8847223Abstract: A method of forming a photosensitive pattern on a substrate with a photosensitive layer disposed thereon may include moving at least one of the substrate and a set of micro-mirrors in a first direction, the set of micro-mirrors being disposed above the substrate and being arranged as an array, the array having a first edge extending in a second direction, the second direction being at an acute angle with respect to the first direction. The method may also include selectively turning on one or more micro-mirrors of the set of micro-mirrors according to a position of the set of micro-mirrors relative to the photosensitive layer, thereby irradiating one or more spot beams on the photosensitive layer. The photosensitive layer exposed by the spot beams is developed to form a photosensitive pattern having an edge portion extending in a third direction crossing the first and second directions.Type: GrantFiled: February 28, 2012Date of Patent: September 30, 2014Assignee: Samsung Display Co., Ltd.Inventors: Jung-In Park, Su-Yeon Sim, Sang-Hyun Yun, Cha-Dong Kim, Hi-Kuk Lee
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Patent number: 8847224Abstract: According to one exemplary embodiment, a fin-based bipolar junction transistor (BJT) includes a wide collector situated in a semiconductor substrate. A fin base is disposed over the wide collector. Further, a fin emitter and an epi emitter are disposed over the fin base. A narrow base-emitter junction of the fin-based BJT is formed by the fin base and the fin emitter and the epi emitter provides increased current conduction and reduced resistance for the fin-based BJT. The epi emitter can be epitaxially formed on the fin emitter and can comprise polysilicon. Furthermore, the fin base and the fin emitter can each comprise single crystal silicon.Type: GrantFiled: September 27, 2011Date of Patent: September 30, 2014Assignee: Broadcom CorporationInventors: Wei Xia, Xiangdong Chen
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Patent number: 8847226Abstract: A transistor includes a substrate. A first electrically conductive material layer is positioned on the substrate. A second electrically conductive material layer is in contact with and positioned on the first electrically conductive material layer. The second electrically conductive material layer includes a reentrant profile. The second electrically conductive material layer also overhangs the first electrically conductive material layer.Type: GrantFiled: January 7, 2011Date of Patent: September 30, 2014Assignee: Eastman Kodak CompanyInventors: Lee W. Tutt, Shelby F. Nelson
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Patent number: 8847227Abstract: A display panel circuit structure includes a substrate, a first metal layer, a second metal layer, and a third metal layer. The first metal layer is disposed on the substrate. The second metal layer is disposed on the first metal layer and electrically connected to the first metal layer, in which the second metal layer has a pad area and a trace area connected to the pad area. The line width of the second metal layer in the pad area is greater than the line width of the second metal layer in the trace area. The third metal layer is disposed on the second metal layer, in which the third metal layer does not overlap the second metal layer n the trace area.Type: GrantFiled: November 23, 2012Date of Patent: September 30, 2014Assignee: E Ink Holdings Inc.Inventors: Po-Hsin Lin, Chi-Liang Wu, Chin-Wen Lin, Ted-Hong Shinn
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Patent number: 8847228Abstract: A thin film transistor array panel includes: a semiconductor layer disposed on an insulation substrate; a gate electrode overlapping the semiconductor layer; a source electrode and a drain electrode overlapping the semiconductor layer; a first barrier layer disposed between the source electrode and the semiconductor layer; and a second barrier layer disposed between the drain electrode and the semiconductor layer, wherein the first barrier layer and the second barrier layer include nickel-chromium (NiCr).Type: GrantFiled: November 30, 2012Date of Patent: September 30, 2014Assignee: Samsung Display Co., Ltd.Inventors: Kyung Seop Kim, Byeong-Beom Kim, Joon Yong Park, Chang Oh Jeong, Hong Long Ning, Dong Min Lee
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Patent number: 8847229Abstract: There is provided a method for manufacturing a flexible semiconductor device.Type: GrantFiled: February 21, 2012Date of Patent: September 30, 2014Assignee: Panasonic CorporationInventors: Takeshi Suzuki, Koichi Hirano, Shinobu Masuda
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Patent number: 8847230Abstract: A thin film transistor is provided that includes a gate electrode, a source electrode, and a drain electrode, an oxide semiconductor active layer formed over the gate electrode, a fixed charge storage layer formed over a portion of the oxide semiconductor active layer, and a fixed charge control electrode formed over the fixed charged storage layer.Type: GrantFiled: June 12, 2013Date of Patent: September 30, 2014Assignee: Sony CorporationInventors: Yasuhiro Terai, Eri Fukumoto, Toshiaki Arai
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Patent number: 8847231Abstract: An organic light emitting display device includes a substrate, a thin film transistor formed on the substrate and including an active layer, a gate electrode including a gate lower electrode and a gate upper electrode, a source electrode, and a drain electrode, an organic light emitting device electrically connected to the thin film transistor, wherein a pixel electrode formed of the same material as at least a part of the gate electrode in the same layer, an intermediate layer including a light emitting layer, and an opposed electrode arranged to face the pixel electrode are sequentially deposited.Type: GrantFiled: November 29, 2013Date of Patent: September 30, 2014Assignee: Samsung Display Co., Ltd.Inventors: June-Woo Lee, Chun-Gi You, Joon-Hoo Choi
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Patent number: 8847232Abstract: A transistor includes a substrate. A first electrically conductive material layer, having a thickness, is positioned on the substrate. A second electrically conductive material layer is in contact with and positioned on the first electrically conductive material layer. The second electrically conductive material layer overhangs the first electrically conductive material layer. An electrically insulating material layer, having a thickness, is conformally positioned over the second electrically conductive material layer, the first electrically conductive material layer, and at least a portion of the substrate. The thickness of the first electrically conductive material layer is greater than the thickness of the electrically insulating material layer.Type: GrantFiled: January 7, 2011Date of Patent: September 30, 2014Assignee: Eastman Kodak CompanyInventors: Lee W. Tutt, Shelby F. Nelson
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Patent number: 8847233Abstract: It is an object to provide a semiconductor device in which a short-channel effect is suppressed and miniaturization is achieved, and a manufacturing method thereof. A trench is formed in an insulating layer and impurities are added to an oxide semiconductor film in contact with an upper end corner portion of the trench, whereby a source region and a drain region are formed. With the above structure, miniaturization can be achieved. Further, with the trench, a short-channel effect can be suppressed setting the depth of the trench as appropriate even when a distance between a source electrode layer and a drain electrode layer is shortened.Type: GrantFiled: May 3, 2012Date of Patent: September 30, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Atsuo Isobe, Toshinari Sasaki, Junichi Koezuka, Shunpei Yamazaki
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Patent number: 8847234Abstract: A thin-film transistor array substrate and a fabrication method thereof according to an embodiment of the present invention are disclosed to form an interlayer insulating layer, thereby reducing a failure occurred during the process subsequent to a gate electrode. The thin-film transistor disclosed according to the present invention may include a substrate, a gate electrode formed on the substrate, a planarized insulating layer formed at a lateral surface portion of the gate electrode and at an upper portion of the substrate, a gate insulating layer formed on the planarized insulating layer containing an upper portion of the gate electrode, an active layer formed at an upper portion of the planarized insulating layer located at an upper side of the gate electrode, and a source electrode and a drain electrode formed on the active layer and separated from each other based on a channel region.Type: GrantFiled: August 1, 2012Date of Patent: September 30, 2014Assignee: LG Display Co., Ltd.Inventors: Tae-Young Oh, Heung-Lyul Cho, Ji-Eun Jung
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Patent number: 8847235Abstract: A cascoded power semiconductor circuit is provided for power switches based on depletion-mode (normally on) devices. The control circuit makes use of a bootstrap arrangement that allows an active control of both power switches of a cascode circuit using a single gate driver.Type: GrantFiled: July 9, 2013Date of Patent: September 30, 2014Assignee: NXP B.V.Inventor: Matthias Rose
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Patent number: 8847236Abstract: A semiconductor substrate includes: a silicon substrate; a monocrystalline silicon carbide film formed on a surface of the silicon substrate; and a stress relieving film formed on the surface of the silicon substrate opposite from the side on which the monocrystalline silicon carbide film is formed, and that relieves stress in the silicon substrate by applying compressional stress to the silicon substrate surface on which the stress relieving film is formed, wherein a plurality of spaces is present in the monocrystalline silicon carbide film in portions on the side of the silicon substrate and along the interface between the monocrystalline silicon carbide film and the silicon substrate.Type: GrantFiled: January 7, 2013Date of Patent: September 30, 2014Assignee: Seiko Epson CorporationInventor: Yukimune Watanabe
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Patent number: 8847237Abstract: A method for manufacturing a silicon carbide semiconductor device includes the steps of preparing a silicon carbide substrate, forming a silicon dioxide film on the silicon carbide substrate, and forming an electrode containing Al and Ti to make contact with the silicon carbide substrate and the silicon dioxide film. The step of forming the electrode includes the steps of forming a metal film containing Al and Ti on the silicon carbide substrate, and heating the metal film to not less than 500° C. in an atmosphere in which oxygen gas is introduced. Thereby, the method for manufacturing the silicon carbide semiconductor device capable of improving insulation reliability of an insulating film can be provided.Type: GrantFiled: July 9, 2013Date of Patent: September 30, 2014Assignee: Sumitomo Electric Industries, Ltd.Inventor: Hideto Tamaso
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Patent number: 8847238Abstract: A semiconductor layer 102 having a drift region 132, a body region 103, and a source region 104 provided at a position next to the body region 103; an epitaxial layer 106 in contact with the body region; and a gate insulating film 107 provided on the epitaxial layer are formed on a principal surface of a semiconductor substrate 101. The epitaxial layer includes an interface epitaxial layer 106i in contact with the body region, a first epitaxial layer 106a on the interface epitaxial layer 106i, and a second epitaxial layer 106b on the first epitaxial layer 106a. An impurity concentration of the interface epitaxial layer is higher than an impurity concentration of the first epitaxial layer, and lower than an impurity concentration of the second epitaxial layer.Type: GrantFiled: May 20, 2013Date of Patent: September 30, 2014Assignee: Panasonic CorporationInventors: Tsutomu Kiyosawa, Masao Uchida, Nobuyuki Horikawa, Koutarou Tanaka, Kazuhiro Kagawa, Yasuyuki Yanase, Takashi Hasegawa
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Patent number: 8847239Abstract: An LED device includes a substrate including a first and second light emitting modules, and first and second opposite sides. The first light emitting module includes a first conductive electrode located adjacent to the first side, a second conductive electrode located adjacent to the second side, and a first plurality of light emitting micro diodes electrically connected in the form of a plurality of serially connected bridge rectifiers between the first conductive electrode and the second conductive electrode. The second light emitting module includes a third conductive electrode located adjacent to the first side, a fourth conductive electrode adjacent to the second side, and a second plurality of light emitting micro diodes electrically connected in the form of a plurality of serially connected bridge rectifiers between the third conductive electrode and the fourth conductive electrode. The first, second, third, and fourth conductive electrodes are physically separated from each other.Type: GrantFiled: July 7, 2009Date of Patent: September 30, 2014Assignee: Epistar CorporationInventor: Ming-Te Lin
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Patent number: 8847240Abstract: An optoelectronic device is provided including an element that forms a dipole moment between an active layer and a charge transport layer. The optoelectronic device may include an active layer between a first electrode and a second electrode, a first charge transport layer between the first electrode and the active layer, and a dipole layer between the active layer and the first charge transport layer. A second charge transport layer may be further provided between the second electrode and the active layer. The second dipole layer may be further provided between the second charge transport layer and the active layer.Type: GrantFiled: February 29, 2012Date of Patent: September 30, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Dae-young Chung, Kyung-sang Cho, Tae-ho Kim, Byoung-lyong Choi
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Patent number: 8847241Abstract: The invention is directed to a surface emitting semiconductor light-emitting diode (LED) in which a reflector layer (4) of the first conductivity type is provided between a substrate (2) and a first barrier layer (5). A first contact layer (9) has at least one emitting surface (13) via which radiation emitted by an active layer (6) exits the LED. The emitting surfaces (13) are electrically and optically isolated from one another by surface implanted regions (11) in the first contact layer (9) which are irradiated with electric charge carriers. The areas of the layers located below the emitting surface (13) starting from the first contact layer (9) and proceeding as far as at least through the active layer (6) are electrically and optically isolated with respect to areas of the layers not located below the emitting surface (13) by means of first deep implanted regions (12.1) irradiated with electric charge carriers.Type: GrantFiled: March 31, 2011Date of Patent: September 30, 2014Assignee: JENOPTIK Polymer Systems GmbHInventors: Bernd Kloth, Vera Abrosimova, Torsten Trenkler
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Patent number: 8847242Abstract: A light emitting diode device (e.g., LED package) may include at least two light emitting devices that can be switched independently of one another and thus may be useful in vehicular lighting applications, for example low and high beam headlights. A LED device may include a first LED die and at least one additional LED die disposed at different positions within a common reflector cup or relative to a common lens. Multiple LED sub-assemblies may be mounted to a common lead frame along non-coincident principal axes. Methods for varying intensity or color from multi-LED lamps are further provided.Type: GrantFiled: December 20, 2013Date of Patent: September 30, 2014Assignee: Cree, Inc.Inventor: Edward Lloyd Hutchins
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Patent number: 8847243Abstract: A semiconductor package includes a transmissive support plate and includes at least one elongate hole. An integrated circuit semiconductor device is mounted on a rear face of the support plate. The semiconductor device includes first and second optical elements oriented towards the rear face of the support plate, where the first and second optical elements are placed on either side of the elongate hole. An encapsulation material made of an opaque material encapsulates the semiconductor device and fills the elongate hole so as to form an optical insulation partition between the first and second optical elements. A cavity is left, however, between each optical element and a rear face of the support plate.Type: GrantFiled: March 29, 2012Date of Patent: September 30, 2014Assignee: STMicroelectronics (Grenoble 2) SASInventors: Romain Coffy, Emmanuelle Vigier-Blanc
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Patent number: 8847244Abstract: A photpcoupler includes: a light emitting element; a first photodiode array; a second photodiode array; a third photo diode array; an enhancement-mode MOSFET; a first depletion-mode MOSFET; and a second depletion mode MOSFET. The light emitting element converts the input electrical signal into the optical signal. A drain current of the enhancement-mode MOSFET is supplied to the external load when the optical signal is ON. A drain current of the first depletion-mode MOSFET is supplied to the external load when the optical signal is OFF and a voltage passing through the second depletion-mode MOSFET switched to the ON state is supplied to the gate of the first depletion-mode MOSFET. And the drain current of the first depletion-mode MOSFET is larger than a drain current of the first depletion-mode MOSFET when a gate voltage of the first depletion-mode MOSFET is zero.Type: GrantFiled: July 11, 2013Date of Patent: September 30, 2014Assignee: Kabushiki Kaisha ToshibaInventor: Yoichiro Ito
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Patent number: 8847245Abstract: Objects are to provide a small imaging device that can take an image of a thick book without distortion of an image of a gutter and to improve the portability of an imaging device by downsizing the imaging device. The imaging device has imaging planes on both surfaces. All elements included in the imaging device are preferably provided over one substrate. In other words, the imaging device has a first imaging plane and a second imaging plane facing opposite to the first imaging plane.Type: GrantFiled: October 5, 2012Date of Patent: September 30, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Yoshiyuki Kurokawa
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Patent number: 8847246Abstract: An organic light emitting diode display is disclosed. The organic light emitting diode display includes a base substrate including a display area and a non-display area around the display area, a plurality of pixels formed over the display area of the base substrate, the plurality of pixels including a common electrode, a common power line formed over the base substrate and electrically connected to a circuit of each of the plurality of pixels, an encapsulation substrate bonded to the base substrate by a sealing member surrounding the plurality of pixels, the encapsulation substrate including an inner surface facing the base substrate, a first conductive layer formed over the inner surface and electrically connecting the common power line to a first potential, and a second conductive layer formed over the inner surface and spaced apart from the first conductive layer, the second conductive layer electrically connecting the common electrode to a second potential.Type: GrantFiled: April 14, 2011Date of Patent: September 30, 2014Assignee: Samsung Display Co., Ltd.Inventors: Do-Hyung Ryu, Chun-Seok Ko, Kie Hyun Nam
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Patent number: 8847247Abstract: An optoelectronic module is provided which comprises a first semiconductor body (2) with a radiation exit side (2a) on which an electrical connection region (21, 22) is arranged. The first semiconductor body (2) is arranged with its side opposite the radiation exit side (2a) on a carrier (1). An insulation material (3) is arranged on the carrier (1) laterally next to the first semiconductor body (2), which material forms a fillet and adjoins the semiconductor body (2) form-fittingly. An insulation layer (4) is arranged at least in places on the first semiconductor body (2) and the insulation material (3), on which layer a planar conductive structure is arranged for planar contacting of the first semiconductor body (2), which conductive structure is electrically conductively connected with the electrical connection region (21, 22). A method of producing such an optoelectronic module is furthermore provided.Type: GrantFiled: August 6, 2010Date of Patent: September 30, 2014Assignee: OSRAM Opto Semiconductors GmbHInventors: Karl Weidner, Ralph Wirth, Axel Kaltenbacher, Walter Wegleiter, Bernd Barchmann, Oliver Wutz, Jan Marfeld
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Patent number: 8847248Abstract: A light-emitting device includes: a carrier; a light-emitting structure formed on the carrier, wherein the light-emitting structure has a first surface facing the carrier, a second surface opposite to the first surface, and an active layer between the first surface and the second surface; a plurality of first trenches extended from the first surface and passing through the active layer so a plurality of light-emitting units is defined; and a plurality of second trenches extended from the second surface and passing through the active layer of each of the plurality of light-emitting units.Type: GrantFiled: November 25, 2013Date of Patent: September 30, 2014Assignee: Epistar CorporationInventors: Chien-Fu Huang, Chao-Hsing Chen, Chiu-Lin Yao, Hsin-Mao Liu, Chien-Kai Chung
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Patent number: 8847249Abstract: A multicolored LED device made of a semipolar material having different indium containing regions provided on different spatial features of GaN material. Other materials such as non-polar materials can also be used.Type: GrantFiled: June 15, 2009Date of Patent: September 30, 2014Assignee: Soraa, Inc.Inventors: James W. Raring, Daniel F. Feezell, Shuji Nakamura
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Patent number: 8847250Abstract: The upper surface portion of a planarization layer is planarized. In an anode formed on the planarization layer, upper surface portions at edge regions by a bank are located above an upper surface portion at a central region. A hole injection transporting layer is layered along the upper surface portions of the anode, and in the hole injection transporting layer, upper surface portions at the edge regions near the bank are located above an upper surface portion at the central region. In an organic light-emitting layer, upper surface portions at the edge regions (regions D1 and D2) near the bank are located above an upper surface portion at the central region (region D3). As a result, thicknesses T11 and T12 of the light-emitting layer are equivalent to a thickness T13 of the organic light-emitting layer.Type: GrantFiled: May 7, 2012Date of Patent: September 30, 2014Assignee: Panasonic CorporationInventors: Yuuki Abe, Hideaki Matsushima