Abstract: A light emitting device includes a first semiconductor layer doped with an n-type dopant, a second semiconductor layer doped with a p-type dopant, and an active layer disposed between the first semiconductor layer and the second semiconductor layer. The active layer is formed of InxAlyGa1-x-yN (0?x?1, 0?y?1, 0?x+y?1) and includes a plurality of barrier layers and a plurality of well layers. At least one well layer is provided between the two barrier layers and has a smaller bandgap energy than that of the barrier layer. An intermediate layer is provided between the active layer and the second semiconductor layer. The intermediate layer is formed of InaAlbGa1-a-bN (0?a?1, 0?b?1, 0?a+b?1) and has a smaller bandgap energy than that of the barrier layers. A blocking layer is provided between the intermediate layer and the second semiconductor layer.

Abstract: Engineered substrates having thermally opaque materials for preventing transmission of radiative energy during epitaxial growth processes and for separating substrates from epitaxially grown semiconductor structures and associated systems and methods are disclosed herein. In several embodiments, for example, an engineered substrate can be manufactured by forming a thermally opaque material at an upper surface of a handle substrate and bonding an epitaxial formation structure on the handle substrate such that the thermally opaque material is between the epitaxial formation structure and the handle substrate. In various embodiments, the thermally opaque material at least partially blocks radiative heat transmission between the handle substrate and the epitaxial formation structure, for example, to provide increased accuracy of epitaxy process temperature measurements and/or increased uniformity of epitaxy growth characteristics across the engineered substrate.

Abstract: A semiconductor device includes a first superlattice buffer layer formed on a substrate. A second superlattice buffer layer is formed on the first superlattice buffer layer. A first semiconductor layer is formed by a nitride semiconductor on the second superlattice buffer layer. A second semiconductor layer is formed by a nitride semiconductor on the first semiconductor layer. The first superlattice buffer layer is formed by alternately and cyclically laminating a first superlattice formation layer and a second superlattice formation layer. The second superlattice buffer layer is formed by alternately and cyclically laminating the first superlattice formation layer and the second superlattice formation layer. The first superlattice formation layer is formed by AlxGa1-xN, and the second superlattice formation layer is formed by AyGa1-yN, where x>y. A concentration of an impurity element doped into the second superlattice buffer layer is higher than that doped into the first superlattice buffer layer.

Abstract: A semiconductor device includes at least one nanowire that is disposed over a substrate, extends to be spaced apart from the substrate, and includes a channel region, a gate that surrounds at least a part of the channel region, and a gate dielectric film that is disposed between the channel region and the gate. A source/drain region that contacts one end of the at least one nanowire is formed in a semiconductor layer that extends from the substrate to the one end of the at least one nanowire. Insulating spacers are formed between the substrate and the at least one nanowire. The insulating spacers are disposed between the gate and the source/drain region and are formed of a material that is different from a material of the gate dielectric film.

Abstract: A tunnel field-effect transistor (TFET) device includes first and second semiconductor contact regions separated by a semiconductor channel region; a channel gate overlying the channel region; and first and second doping gates overlying the first and second contact regions respectively; wherein application of a positive voltage level at the first doping gate and a negative voltage level at the second doping gate produces an n-type first contact region and a p-type second contact region, and reversing the voltage levels at the doping gates produces a p-type first contact region and an n-type second contact region.

Abstract: A method of fabricating an organic light emitting device (OLED) on a substrate includes providing a mold having surface features, forming a substrate over the mold, fabricating an OLED over the substrate while the substrate is in the mold, and removing the mold from the substrate having the OLED fabricated thereon.

Abstract: An organic light-emitting display panel includes a pixel unit including a plurality of pixels respectively located at intersections between scan lines and data lines and displaying different colors; a plurality of pads respectively coupled to ends of the data lines; and a test unit selectively performing an array test to detect a defect of a pixel circuit of the pixels or a cell test to detect a defect of a light-emitting device of the pixels.

Abstract: In an aspect, an organic light-emitting device is provided.

Abstract: An organic compound represented by Formula 1 is disclosed. An organic light-emitting device including the organic compound is also disclosed.

Abstract: A compound represented by Formula 1 or Formula 2 and an organic light-emitting device including the same:

Abstract: A compound represented by Formula 1 or 2, and an organic light-emitting device including the same are disclosed. Formulae 1 and 2 are defined as in the specification.

Abstract: Provided are an organic light emitting display apparatus and a method of manufacturing the same. The apparatus includes a substrate including a display area and a peripheral area outside the display area, a plurality of thin film transistors (TFTs) disposed in the peripheral area of the substrate, a first insulating layer covering the plurality of TFTs, a plurality of conductive layers disposed on the first insulating layer to be located above the plurality of TFTs and to be mutually separated to correspond to spaces among the plurality of TFTs, a second insulating layer covering spaces among the plurality of conductive layers, and an opposite electrode corresponding to the display area and the peripheral area of the substrate, covering the second insulating layer, and being in contact with at least portions of the conductive layers.

Abstract: A pyrene-based compound is represented by Formula 1: where R11 to R14, L11, m11, n11, k11, a12, a13, and a14 are as defined in the specification.

Abstract: A condensed cyclic compound represented by Formula 1: wherein in Formula 1, Groups X1 to X3, L11, L12, R11, and R12, and variables a11, a12, b11, b12, c11, and c12 are described in the specification.

Abstract: A display device according to an exemplary embodiment of the present invention includes a display panel. A protective window is formed on the display panel. The protective window includes a first transparent member. The first transparent member includes a plurality of protrusions. The first transparent member is made of an elastomer. A second transparent member is provided on the first transparent member. The second transparent member is made of a high-hardness polymer material. The second transparent member fills spaces between the plurality of protrusions and forms a flat surface.

Abstract: An electronic device may include a display having an array of organic light-emitting diode display pixels that produce light that forms an image. Color filter elements may be used to allow the display to present color images. Each display pixel may have a red subpixel, a blue subpixel, a green subpixel, and a white subpixel. To adjust the color coordinates of the white pixel and thereby ensure that the light from the white pixel has a desired white point, part of the white subpixel may be overlapped by an area of colored color filter material. The white subpixel may, for example have a rectangular white area within which a patch of blue color filter material may be provided to make the white light from the white subpixel more bluish than it would be without the patch of blue color filter material.

Abstract: A display apparatus includes a substrate, a display unit, a first metal oxide layer on the display unit, and a second metal oxide layer. The display unit may include an emission region and a non-emission region. The second metal oxide layer may be on the first metal oxide layer in the non-emission region. The first metal oxide layer and the second metal oxide layer may each include a metal oxide, the transparency of which varies according to a degree of oxidization of the metal oxide.

Abstract: An organic light-emitting diode (OLED) display is disclosed. In one aspect, the OLED display includes red, green, and blue pixels. Each pixel includes a pixel electrode, a hole auxiliary layer formed over the pixel electrode, and an organic emission layer formed over the hole auxiliary layer. Each pixel also includes an electron auxiliary layer formed over the organic emission layer, and a common electrode formed over the electron auxiliary layer. Each of the red and green pixels further includes a host layer formed between the hole auxiliary layer and the organic emission layer and a resonance layer formed between the host layer and the organic emission layer.

Abstract: Novel combination of materials and device architectures for organic light emitting devices is provided. An organic light emitting device, is provided, having an anode, a cathode, and an emissive layer disposed between the anode and the cathode. The emissive layer includes a host and a phosphorescent emissive dopant having a peak emissive wavelength less than 500 nm, and a radiative phosphorescent lifetime less than 1 microsecond. Preferably, the phosphorescent emissive dopant includes a ligand having a carbazole group.

Abstract: Provided is a compound for an organic optoelectric device, an organic light emitting diode including the same, and a display device including the organic light emitting diode, wherein the compound for an organic optoelectric device is represented by Chemical Formula 1. The Chemical Formula 1 and description thereof are the same as described in the specification.

Abstract: There is provided an organic semiconductor material with which it is possible to manufacture an electronic element by a wet process which is low cost. Furthermore, the object is to provide an organic semiconductor electronic element which is hardly broken, light in weight and inexpensive, and has high characteristic. According to the present invention, it has been found that it is possible to provide an organic semiconductor material in which performance is improved and which is suitable for a wet process by optimizing a phthalocyanine derivative which configures a phthalocyanine nano-sized substance and the completion of the present invention has been reached. Furthermore, it is possible to provide an electronic element which has high durability, is hardly broken, light in weight, inexpensive and has high characteristic by using the organic semiconductor material in an electronic element active part (a semiconductor layer).

Abstract: Methods for producing organic field effect transistors, organic field effect transistors, and electronic switching devices are provided. The methods may include providing a gate electrode and a gate insulator assigned to the gate electrode for electrical insulation on a substrate, depositing a first organic semiconducting layer on the gate insulator, generating a first electrode and an electrode insulator assigned to the first electrode for electrical insulation on the first organic semiconducting layer, depositing a second organic semiconducting layer on the first organic semiconducting layer and the electrode insulator, and generating a second electrode on the second organic semiconducting layer.

Abstract: An organic electroluminescence unit includes: a plurality of light-emitting layers of different colors (14R, 14G, 14B); a first electrode (11) and a second electrode (16) applying a voltage to each of the plurality of light-emitting layers; and a charge transport layer disposed between one or more light-emitting layers of the plurality of light-emitting layers and the first electrode (11).

Abstract: A transparent electrode comprising a nitrogen-containing layer, and an electrode layer provided adjacent to the nitrogen-containing layer and having silver as a main component. The nitrogen-containing layer is configured using a compound containing nitrogen atoms, wherein the effective unshared electron pair content [n/M] is 2.0×10?3?[n/M], n being the number of unshared electron pairs that are not involved in aromaticity and that are not coordinated with the metal from among the unshared electron pairs of the nitrogen atoms, and M being the molecular weight.

Abstract: An insulating composition includes a nanoparticle-polyorganosiloxane composite, a cross-linking agent, and a solvent, an insulator includes the insulating composition, and an electronic device includes the insulator.

Abstract: An organic light-emitting diode (OLED) display having thin film transistors (TFTs) is disclosed. In one aspect, TFTs of the OLED display include a substrate and a first semiconductor layer formed over the substrate and including first channel, source, and drain regions and a lightly doped region between the first channel region and the first source and drain regions. The OLED display also includes a second semiconductor layer formed over the substrate and including second channel, source, and drain regions. The OLED display further includes first and second gate electrodes formed over the first semiconductor layer and a third gate electrode formed over the second semiconductor layer. The width of the second gate electrode is less than that of the first gate electrode and the lightly doped region overlaps a portion of the first gate electrode and does not overlap the second gate electrode.

Abstract: A compound having the structure of formula I: is described. In formula I, A1, A2, A3, A4, A5, A6, A7, and A8 can be carbon or nitrogen; at least one of A1, A2, A3, A4, A5, A6, A7, and A8 being nitrogen; X is a neutral donor; is a monoanionic bidentate ligand; n is an integer from 1 to 3; ring B is bonded to ring A through a C—C bond; and ring A is bonded to the iridium through a Ir—C bond. In addition, R1, R2, R3, R4, and R6 are independently selected from hydrogen, deuterium, halide, alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acids, ester, nitrite, isonitrile, sulfanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof. Also described are formulations and devices, such as an OLEDs, that include the compound of formula I.

Abstract: An organic light emitting diode display panel is disclosed, which comprises: a first substrate with an organic light emitting layer formed thereon; a second substrate corresponding to the first substrate, and adhered to the first substrate with a frit sealant; and plural spacers disposed between the first substrate and the second substrate, and comprising a first spacer, a second spacer and a third spacer adjacent to each other, wherein shapes of a first projection of the first spacer, a second projection of the second spacer and a third projection of the third spacer on the second substrate are different from each other. In addition, the present invention also disclosed an organic light emitting diode display device containing the same.

Abstract: A display unit includes: a plurality of light emitting elements provided in a display region of a first substrate, and including a first electrode, a light emitting layer, and a second electrode in this order on the first substrate; an auxiliary wiring provided on a second substrate facing the first substrate with the light emitting elements interposed therebetween, and extending from the display region to a peripheral region surrounding the display region; a first pillar configured to electrically connect the auxiliary wiring and the second electrode of the light emitting elements; and a second pillar configured to electrically connect the auxiliary wiring and a peripheral electrode provided in the peripheral region of the first substrate.

Abstract: Disclosed is an organic light emitting display (OLED) device that may include first and second electrodes facing each other on a substrate, at least two light emitting units between the first and second electrodes, and a charge generation layer between the at least two light emitting units, the charge generation layer including an N-type charge generation layer and a P-type charge generation layer, wherein the N-type charge generation layer includes at least two hosts and a dopant, and wherein the at least two hosts have different lowest unoccupied molecular orbital (LUMO) energy levels.

Abstract: An organic light-emitting display device is disclosed. The organic light emitting display device includes a display panel including sub-pixels emitting light of at least three colors, and a driver supplying a driving signal to the display panel, wherein each of the sub-pixels emitting at least three colors includes an opening region emitting its own color and a light-emitting participation region additionally emitting the same color as or different color from the its own color.

Abstract: An organic EL display device includes: a TFT substrate that includes a display area in which pixels are arranged in a matrix; and a color filter substrate that is provided to face the TFT substrate and includes an area transmitting light in a predetermined wavelength range for each of the pixels. Each of the pixels of the TFT substrate includes a pair of electrodes, at least two light emission layers that are arranged between the pair of electrodes, and a charge generation layer that is arranged between the at least two light emission layers, is a layer to generate a pair of positive and negative charges, and has different film thicknesses in accordance with the predetermined wavelength range of the corresponding area.

Abstract: An organic EL display device includes an organic layer having plural layers including a light emitting layer, and a color filter that passes a light of a predetermined wavelength region. The organic layer includes a first organic layer that is arranged in a first area having plural independent areas in a display area, and includes the light emitting layer that emits a light of a first wavelength region, and a second organic layer that is arranged in a second area having plural independent areas which is an area different from the first area in the display area, and includes the light emitting layer that emits a light of a second wavelength region which is different from the first wavelength region. The color filter has a first color filter and a second color filter that pass respective lights of different wavelength regions in the light emitted from the light emitting layer of the first organic layer.

Abstract: In an organic EL display device, a resistance of a cathode electrode of OLEDs is substantially reduced while maintaining a higher opening ratio of pixels as an entire display area. A reference power supply line is formed on a glass substrate, and receives a reference potential for driving the OLED. The OLED is formed on the glass substrate where the reference power supply line is formed, and has a structure in which a lower electrode, an organic material layer, and an upper electrode that is a cathode electrode common to plural pixels are laminated on each other in the order from the bottom. In some of the plural pixels, a cathode contact that penetrates through the organic material layer, and electrically connects the upper electrode to the reference power supply line is formed within an opening area corresponding to a W sub-pixel.

Abstract: An organic EL display device includes a first organic layer that is arranged between lower electrodes and an upper electrode, and formed of a plurality of layers including a light emitting layer, a laminated auxiliary line that has a first auxiliary line and a second auxiliary line, and laminated on each other in order, and extend in one direction between two of pixels adjoining each other, and a second organic layer that is formed of a plurality of the same layers as the first organic layer, and arranged in contact with the first auxiliary line in a connection hole opened in the second auxiliary line so as to come out of contact with the first organic layer, in which the upper electrode is arranged in contact with the first auxiliary line around the second organic layer so as to embed the connection hole.

Abstract: A display device according to the invention includes: a first substrate that includes a flexible substrate, is segmented into a display area and a non-display area outside the display area, and includes a thin film transistor and an electroluminescent light-emitting element formed on the display area of the flexible substrate; and an IC chip that is bonded on the non-display area of the first substrate via an anisotropic conductive film, wherein the first substrate includes, between the flexible substrate and the anisotropic conductive film, at least one or more support layers whose plan view shape is larger than that of the IC chip and whose hardness is higher than that of the flexible substrate, and the IC chip is located inside the at least one or more support layers in a plan view.

Abstract: A filling material is provided in an interval part between a first substrate provided with a light emitting device in a pixel and a second substrate provided with a color filter layer corresponding to each pixel which is provided to face each other and a protruding part is provided in the interval part. The protruding part is provided separated along one edge of each pixel. An end part in a length direction of the protruding part is formed in a cone or streamlined shape. In addition, the protruding part is formed from a material having light absorbing properties such as carbon black so as to provide light shielding properties. By adopting this structure, it is possible to solve a problem of mixing colors produced between pixels. It is possible to ensure that the flow of the filling material provided between the first substrate and the second substrate is not obstructed.

Abstract: In an organic EL display device having plural organic EL elements each including an organic light emitting layer, an upper electrode formed on an upper side of the organic light emitting layer, and a reflective layer formed on a lower side of the organic light emitting layer, in which an image is displayed on a side of the organic light emitting layer on which the upper electrode is formed. The reflective layer in each of the organic EL elements includes a first plane, a second plane formed on a side lower than the first plane; and an inclined plane formed between the first plane and the second plane, and linearly inclined at a given angle equal to or higher than 35°, and equal to or lower than 55°.

Abstract: A display device, includes: a first substrate; an organic planarizing film that is made of an organic insulating material, and arranged on the first substrate; an electrode that comes in contact with a part of a surface of the organic planarizing film opposite to the first substrate side; an inorganic bank that is made of an inorganic insulating material, covers an end of the electrode, and comes in contact with a part of a surface of the organic planarizing film opposite to the first substrate side; an OLED layer that covers a side of the electrode and the inorganic bank opposite to a side that comes in contact with the organic planarizing film, and partially comes in contact with the organic planarizing film; and a sealing film that is configured to cover a side of the OLED layer opposite to the organic planarizing film side.

Abstract: A compound and an organic light emitting diode device, the compound being represented by the following Chemical Formula 1:

Abstract: Discussed are an organic light emitting diode (OLED) display device and a method of manufacturing the same, which can simplify a manufacturing process and decrease an error. The OLED display device includes a substrate on which an organic light emitting diode (OLED) is formed, a first inorganic thin layer configured to cover the OLED, an organic deposition layer configured to have an organic layer characteristic covering the first inorganic thin layer, and a second inorganic thin layer configured to cover the organic deposition layer.

Abstract: A voltage equal to the threshold value of a TFT (106) is held in capacitor unit (109). When a video signal is inputted from a source signal line, the voltage held in the capacitor unit is added thereto and a resultant signal is applied to a gate electrode of the TFT (106). Even when a threshold value is varied for each pixel, each threshold value is held in the capacitor unit (109) for each pixel. Thus, the influence of a variation in threshold value can be eliminated. Further, holding of the threshold value is conducted by only the capacitor unit (109) and a charge does not move at writing of a video signal so that a voltage between both electrodes is not changed. Thus, it is not influenced by a variation in capacitance value.

Abstract: Disclosed herein is a display apparatus, including: a plurality of subpixels disposed adjacent each other and forming one pixel which forms a unit for formation of a color image; the plurality of subpixels including a first subpixel which emits light of the shortest wavelength and a second subpixel disposed adjacent the first subpixel; the second subpixel having a light blocking member disposed between the second subpixel and the first subpixel and having a width greater than a channel length or a channel width of a transistor which forms the second subpixel.

Abstract: Each unit pixel includes a photoelectric converter formed above a semiconductor region, an amplifier transistor formed in the semiconductor region, and including a gate electrode connected to the photoelectric converter, a reset transistor configured to reset a potential of the gate electrode, and an isolation region formed in the semiconductor region between the amplifier transistor and the reset transistor to electrically isolate the amplifier transistor from the reset transistor. The amplifier transistor includes a source/drain region. The source/drain region has a single source/drain structure.

Abstract: A white LED is provided. The white LED includes a P-type layer, a tunneling structure, an N-type layer, an N-type electrode, and a P-type electrode. The tunneling structure is disposed over the P-type layer. The tunneling structure includes a first barrier layer, an active layer and a second barrier layer. The first barrier layer includes a first metal oxide layer. The active layer includes a second metal oxide layer. The second barrier layer includes a third metal oxide layer. The N-type layer is disposed over the tunneling structure. The N-type electrode and the P-type electrode are respectively contacted with the N-type layer and the P-type layer. An energy gap of the second metal oxide layer is lower than an energy gap of the first metal oxide layer and is lower than an energy gap of the third metal oxide layer.

Abstract: Provided is an oxide-semiconductor-based thin film transistor having satisfactory switching characteristics and stress resistance. Change in threshold voltage through stress application is suppressed in the thin film transistor. The thin film transistor of excellent stability comprises a substrate and, formed thereon, at least a gate electrode, a gate insulating film, oxide semiconductor layers, a source-drain electrode, and a passivation film for protecting the gate insulating film, and oxide semiconductor layers, wherein the oxide semiconductor layers are laminated layers comprising a second oxide semiconductor layer consisting of In, Zn, Sn, and O and a first oxide semiconductor layer consisting of In, Ga, Zn, and O. The second oxide semiconductor layer is formed on the gate insulating film. The first oxide semiconductor layer is interposed between the second oxide semiconductor layer and the passivation film.

Abstract: In a miniaturized transistor, a gate insulating layer is required to reduce its thickness; however, in the case where the gate insulating layer is a single layer of a silicon oxide film, a physical limit on thinning of the gate insulating layer might occur due to an increase in tunneling current, i.e. gate leakage current. With the use of a high-k film whose relative permittivity is higher than or equal to 10 is used for the gate insulating layer, gate leakage current of the miniaturized transistor is reduced. With the use of the high-k film as a first insulating layer whose relative permittivity is higher than that of a second insulating layer in contact with an oxide semiconductor layer, the thickness of the gate insulating layer can be thinner than a thickness of a gate insulating layer considered in terms of a silicon oxide film.

Abstract: A thin film semiconductor device comprises a substrate, a gate electrode disposed above the substrate, an oxide semiconductor layer disposed above the substrate so as to oppose the gate electrode, a channel protective layer disposed on the oxide semiconductor layer, and a source electrode and a drain electrode each connected to the oxide semiconductor layer. The density of states DOS [eV?1cm?3] of oxygen defects in the oxide semiconductor layer satisfies the following relationship: DOS?1.710×1017×(Ec?E)2?6.468×1017×(Ec?E)+6.113×1017 provided that 2.0 eV?Ec?E?2.7 eV where Ec [eV] is an energy level of a conduction band edge of the oxide semiconductor layer and E [eV] is a predetermined energy level of the oxide semiconductor layer.

Abstract: To provide a semiconductor device with low power consumption. In transistors electrically connected to function as a comparator circuit, back gates are provided in the transistors functioning as current sources, and the transistors functioning as the current sources can be switched between conduction and non-conduction in accordance with a control signal supplied to the back gates. The control signal makes the transistor conductive in a period during which the comparator circuit operates and non-conductive in the other period. A semiconductor layer to be a channel formation region of the transistor included in the semiconductor device includes an oxide semiconductor.

Abstract: A metal wire included in a display device, the metal wire includes a first metal layer including a nickel-chromium alloy, a first transparent oxide layer disposed on the first metal layer, and a second metal layer disposed on the first transparent oxide layer.