Patents Issued in January 12, 2016
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Patent number: 9234251Abstract: The invention discloses an isolated, biologically pure culture of Bacillus amyloliquefaciens strain NRRL B-50349 and its use as an environmentally desirable biofungicide. The invention also discloses a formulation comprising the bacterium and a method for controlling plant fungal diseases and infestation of fungal organisms utilizing the strain.Type: GrantFiled: March 18, 2011Date of Patent: January 12, 2016Assignee: Novozymes Biologicals, Inc.Inventors: Amy Snyder, Jessica Vance, Samuel Gnanmanickam
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Patent number: 9234252Abstract: A method for controlling A-shaped segregation of steel ingot. The method includes: 1) controlling a content of phosphorus in liquid steel at less than or equal to 0.005 wt. % upon tapping from an electric furnace, preventing steel slag from entering a ladle, controlling content of harmful elements at less than or equal to 100 ppm; and adding between 3 and 15 kg of calcium oxide and less than or equal to 0.5 kg of aluminum to each ton of the liquid steel; 2) pre-deoxidizing the liquid metal using vacuum carbon deoxidation; 3) de-sulfurizing, controlling content of oxygen, and controlling the content of sulfur in the liquid steel at less than or equal to 0.005 wt. %; and 4) performing vacuum degasification, controlling the total oxygen content at less than or equal to 15 ppm; and casting the steel in the presence of inert gas or in vacuum.Type: GrantFiled: December 12, 2013Date of Patent: January 12, 2016Assignee: INSTITUTE OF METAL RESEARCH CHINESE ACADEMY OF SCIENCESInventors: Dianzhong Li, Paixian Fu, Hongwei Liu, Lijun Xia, Yiyi Li
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Patent number: 9234253Abstract: A readily formable flat steel product has a ductile edge layer that is from 10 to 200 ?m thick and has a ductility greater than a ductility of an inner core layer of the flat steel product. The readily formable flat steel product is produced by annealing a flat steel product having a C content of from 0.1 to 0.4% by weight in a continuous furnace. The annealing is carried out under an annealing atmosphere that contains from 0.1 to 25% by vol. of H2 and H2O, with the balance being N2 and technically unavoidable impurities. A dew point is between ?20° C. and +60° C., and a ratio of H2O/H2 is a maximum of 0.957. In the course of the annealing, the flat steel product is heated to a holding temperature of from 600 to 1100° C. and for a holding time of from 10 to 360 seconds.Type: GrantFiled: December 3, 2010Date of Patent: January 12, 2016Assignee: ThyssenKrupp Steel Europe AGInventors: Wilhelm Warnecke, Manfred Meurer, Jens Kondratiuk, Marc Blumenau, Martin Norden, Thiemo Wuttke
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Patent number: 9234254Abstract: A seamless steel tube contains 0.15% to 0.50% C, 0.1% to 1.0% Si, 0.3% to 1.0% Mn, 0.015% or less P, 0.005% or less S, 0.01% to 0.1% Al, 0.01% or less N, 0.1% to 1.7% Cr, 0.4% to 1.1% Mo, 0.01% to 0.12% V, 0.01% to 0.08% Nb, and 0.0005% to 0.003% B or further contains 0.03% to 1.0% Cu on a mass basis and has a microstructure which has a composition containing 0.40% or more solute Mo and a tempered martensite phase that is a main phase and which contains prior-austenite grains with a grain size number of 8.5 or more and 0.06% by mass or more of a dispersed M2C-type precipitate with substantially a particulate shape.Type: GrantFiled: June 23, 2010Date of Patent: January 12, 2016Assignee: JFE Steel CorporationInventors: Kenichiro Eguchi, Yuji Tanaka, Mitsuo Kimura, Yasuhide Ishiguro, Katsumi Yamada, Haruo Nakamichi
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Patent number: 9234255Abstract: Disclosed is a process for the heat treatment of metal strip material providing mechanical properties that differ over the width of the strip, wherein the strip is heated and cooled and optionally over-aged during a continuous annealing process. At least one of the following parameters in the process differs over the width of the strip: heating rate, top temperature, top temperature holding time, cooling trajectory after top temperature; or, when over-aging is performed, at least one of the following parameters in the process differs over the width of the strip: heating rate, top temperature, top temperature holding time, cooling trajectory after top temperature, over-aging temperature, over-aging temperature holding time, lowest cooling temperature before over-aging, re-heating rate to over-aging temperature. Also, at least one of the cooling trajectories follows a non-linear temperature-time path. Also disclosed is strip material thus produced.Type: GrantFiled: January 25, 2011Date of Patent: January 12, 2016Assignee: TATA STEEL NEDERLAND TECHNOLOGY BVInventor: Steven Celotto
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Patent number: 9234256Abstract: There is provided a process for removing metal from solution wherein a solution comprising a metal is contacted with a scavenger support, whereby the scavenger support binds to at least some of the metal in solution thereby decreasing the amount of metal in solution, characterized in that the scavenger support comprises a functionalized support comprising pendant groups selected from 1,3-ketoesters or 1,3-ketoamides or mixtures thereof attached to a support wherein a number of the pendant groups are reacted with an amine. Scavenger supports comprising a functionalized support comprising pendant 1,3-ketoester or 1,3-ketoamide groups of formula 1: wherein R1 is an optionally substituted hydrocarbyl, perhalogenated hydrocarbyl or heterocyclyl group; X is O or NR2, wherein the free valence of O or NR2 is bonded to a support optionally via a linker; and R2 is hydrogen, an optionally substituted hydrocarbyl, or heterocyclyl group, wherein a number of the pendant groups are reacted with an amine are also provided.Type: GrantFiled: June 13, 2005Date of Patent: January 12, 2016Assignee: JOHNSON MATTHEY FINLAND OYInventors: David Alan Pears, Kevin Edward Treacher
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Patent number: 9234257Abstract: A method for producing high-purity lanthanum having a purity of 4N or more excluding rare earth elements other than lanthanum and gas components, wherein lanthanum having a purity of 4N or more is produced by reducing, with distilled calcium, a lanthanum fluoride starting material that has a purity of 4N or more excluding rare earth elements other than lanthanum and gas components, and the obtained lanthanum is subjected to electron beam melting to remove volatile substances. The method for producing high-purity lanthanum, in which Al, Fe, and Cu are respectively contained in the amount of 10 wtppm or less. The method for producing high-purity lanthanum, in which total content of gas components is 1000 wtppm or less. The present invention aims to provide a technique capable of efficiently and stably providing high-purity lanthanum, a sputtering target composed of high-purity lanthanum, and a thin film for metal gate that contains high-purity lanthanum as a main component.Type: GrantFiled: November 14, 2011Date of Patent: January 12, 2016Assignee: JX Nippon Mining & Metals CorporationInventors: Masahiro Takahata, Takeshi Gohara
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Patent number: 9234258Abstract: Disclosed is an exemplary method of purifying lead which includes the steps of placing lead and a fluoride salt blend in a container; forming a first fluid of molten lead at a first temperature; forming a second fluid of the molten fluoride salt blend at a second temperature higher than the first temperature; mixing the first fluid and the second fluid together; separating the two fluids; solidifying the molten fluoride salt blend at a temperature above a melting point of the lead; and removing the molten lead from the container. In certain exemplary methods the molten lead is removed from the container by decanting. In still other exemplary methods the molten salt blend is a Lewis base fluoride eutectic salt blend, and in yet other exemplary methods the molten salt blend contains sodium fluoride, lithium fluoride, and potassium fluoride.Type: GrantFiled: February 18, 2014Date of Patent: January 12, 2016Assignee: U.S. Department of EnergyInventor: Harmon M. Tunison
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Patent number: 9234259Abstract: A process for recovering copper from an acid aqueous solution containing cupric chlorides and alkali metal and/or alkali earth metal chlorides by a solvent extraction with a cation-exchange extractant, comprising the step of processing a solvent extraction in the presence of sulfate ions.Type: GrantFiled: January 6, 2009Date of Patent: January 12, 2016Assignee: JX NIPPON MINING & METALS CORPORATIONInventors: Yoshifumi Abe, Hiroshi Hosaka, Kazuaki Takebayashi, Akira Yoshimura, Takeshi Nakamura
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Patent number: 9234260Abstract: Provided is a method that selectively extracts and, at a low cost, recovers indium from an acidic solution containing indium and gallium. The present invention is a method that is for isolating a valuable metal and that, by means of subjecting an acidic solution containing indium and gallium to a solvent extraction that is by means of an extraction agent comprising an amide derivative represented by a general formula, extracts indium from the acidic solution. In the formula, R1 and R2 each indicate the same or a different alkyl group, R3 indicates a hydrogen atom or an alkyl group, and R4 indicates a hydrogen atom or any given group, other than an amino group, bonded to the ?-carbon as an amino acid. The general formula preferably has a glycine unit, a histidine unit, a lysine unit, an aspartic acid unit, or an N-methylglycine unit.Type: GrantFiled: April 26, 2013Date of Patent: January 12, 2016Assignees: KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION, SUMITOMO METAL MINING CO., LTD.Inventors: Masahiro Goto, Fukiko Kubota, Yuzo Baba
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Patent number: 9234261Abstract: This invention relates to nonferrous metallurgy, namely to manufacture of near-beta titanium alloys containing titanium and such alloying elements as molybdenum, vanadium, chromium, zirconium, iron and aluminum. The provided alloy contains the following components, in weight percentages: molybdenum—25 to 27; vanadium—25 to 27; chromium—14 to 16; titanium—9 to 11; with balance aluminum and iron and zirconium in the form of commercially pure metals. The technical result of this invention is capability to produce a near-beta titanium alloy with high chemical homogeneity alloyed by refractory elements and having aluminum content ?6 wt %, wherein the alloy is characterized by a combination of stable high strength and high impact strength.Type: GrantFiled: September 23, 2011Date of Patent: January 12, 2016Assignee: Public Stock Company, “VSMPO-AVISMA Corporation ”Inventors: Vladislav Valentinovich Tetyukhin, Igor Vasilievich Levin, Natalya Igorevna Levina
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Patent number: 9234262Abstract: Ultra-low magnetic susceptibility, biocompatible palladium-tin, palladium-aluminum, and palladium-tantalum alloys include at least 75 at % palladium, between about 3 and 20 at % tin, aluminum, or tantalum, respectively, and one or more other additives chosen from niobium, tungsten, molybdenum, zirconium, titanium, tin for non-palladium-tin alloys, aluminum for non-palladium-aluminum alloys, or tantalum for non-palladium-tantalum alloys, up to about 22 at % total.Type: GrantFiled: January 23, 2009Date of Patent: January 12, 2016Assignee: DERINGER-NEY, INC.Inventors: Arthur S. Klein, Edward F. Smith, III, Peter Hale
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Patent number: 9234263Abstract: A weldment includes metal materials that are welded to each other. At least one of the metal materials includes pure copper including an inevitable impurity, more than 2 mass ppm of oxygen, and an additive element selected from the group consisting of Mg, Zr, Nb, Fe, Si, Al, Ca, V, Ni, Mn, Ti and Cr. A method of manufacturing a weldment includes melting a dilute copper alloy material by SCR continuous casting and rolling at a molten copper temperature of not less than 1100° C. and not more than 1320° C. to make a molten metal, forming a cast bar from the molten metal, forming a dilute copper alloy member by hot-rolling the cast bar, and welding the dilute copper alloy member to a metal material.Type: GrantFiled: October 19, 2011Date of Patent: January 12, 2016Assignee: HITACHI METALS, LTD.Inventors: Hiromitsu Kuroda, Toru Sumi, Hideyuki Sagawa, Seigi Aoyama, Masayoshi Goto, Takahiko Hanada, Takahiro Sato, Hidenori Abe
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Patent number: 9234264Abstract: A method of producing a hydrogen storage material including the steps of: forming a magnesium-nickel melt having up to 50 wt % nickel; adding up to 2 wt % of a refining element to the melt under a non-oxidizing atmosphere, the refining element having an atomic radius within the range of 1-1.65 times the atomic radius of magnesium, such as at least one element selected from the group consisting of Zr, Na, K, Ba, Ca, Sr, La, Y, Yb, Rb and Cs; and solidifying the melt to produce the hydrogen storage material.Type: GrantFiled: December 2, 2005Date of Patent: January 12, 2016Assignee: HYDREXIA PTY LIMITEDInventors: Arne Kristian Dahle, Kazuhiro Nogita
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Patent number: 9234265Abstract: There is provided a steel for induction hardening in which cracks are less liable to occur and high hardness and seizure resistance are attained even if a tempering process after induction hardening is omitted. The steel for induction hardening according to the present invention contains, by mass percent, C: 0.20 to 0.34%, Si: at most 0.20%, Mn: 0.75 to 2.0%, P: at most 0.03%, S: at most 0.20%, Cr: 0.05 to 1.2%, Ti: at least 0.002% and less than 0.030%, Al: 0.005 to 0.04%, and N: 0.0040 to 0.020%, the balance being Fe and impurities, and satisfies Formula (1): 1.20?Mn+Cr?2.10??(1) where the content (mass %) of each element is substituted for each of the symbols of elements in Formula (1).Type: GrantFiled: June 27, 2011Date of Patent: January 12, 2016Assignee: NIPPON STEEL & SUMITOMO METAL CORPORATIONInventors: Yuta Mizobe, Hiroaki Tahira, Ken Yoshino
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Patent number: 9234266Abstract: Aluminum alloys having an improved combination of properties are provided. In one aspect, a method for producing the alloy includes preparing an aluminum alloy for artificial aging and artificially aging the alloy. In one embodiment, the artificially aging step includes aging the aluminum alloy at a temperature of at least about 250° F., and final aging the aluminum alloy at a temperature of not greater than about 225° F. and for at least about 20 hours.Type: GrantFiled: September 5, 2012Date of Patent: January 12, 2016Assignee: ALCOA INC.Inventors: Cindie Giummarra, Roberto J. Rioja, Gary H. Bray, Paul E. Magnusen
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Patent number: 9234267Abstract: There is provided a hot-dip Al—Zn coated steel sheet that has a steel sheet containing Si and Mn as a base steel sheet and has excellent coating appearance and corrosion resistance. The Al—Zn coating layer has an Al content in the range of 20% to 95% by mass. The Al—Zn coating layer has a Ca content in the range of 0.01% to 10% by mass. Alternatively, the Ca and Mg content is in the range of 0.01% to 10% by mass. A steel sheet surface layer within 100 ?m from a surface of the base steel sheet directly under the Al—Zn coating layer contains less than 0.060 g/m2 per surface of an oxide of at least one selected from Fe, Si, Mn, Al, P, B, Nb, Ti, Cr, Mo, Cu, and Ni in total.Type: GrantFiled: November 25, 2011Date of Patent: January 12, 2016Assignee: JFE Steel CorporationInventors: Masahiro Yoshida, Hiroki Nakamaru
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Patent number: 9234268Abstract: The present invention provides a high-strength galvanized steel sheet with maximum tensile strength of 900 MPa or more. The high-strength galvanized steel sheet has an alloyed galvanized layer formed on a surface of a base steel sheet containing predetermined amounts of C, Si, Mn, P, S, Al, N, O with a balance being constituted of iron and inevitable impurities, in which in a structure of the base steel sheet, retained austenite is limited to 8% or less in volume fraction, kurtosis K* of the hardness distribution between 2% hardness and 98% hardness is ?0.30 or less, a ratio between Vickers hardness of surface layer of the base steel sheet and Vickers hardness of ¼ thickness of the base steel sheet is 0.35 to 0.70, and a content of iron in the alloyed galvanized layer is 8 to 12% in mass %.Type: GrantFiled: July 27, 2012Date of Patent: January 12, 2016Assignee: NIPPON STEEL & SUMITOMO METAL CORPORATIONInventors: Hiroyuki Kawata, Naoki Maruyama, Akinobu Murasato, Akinobu Minami, Takeshi Yasui, Takuya Kuwayama, Shigeru Yonemura
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Patent number: 9234269Abstract: A method for processing parts for kitchen tools in order to protect the parts from scratches, includes sequentially: a nitridation step, optionally including a nitrocarburizing step, between 592 and 750° C. in order to promote the formation of a nitrogen austenite layer; and a processing step for promoting the conversion of at least a portion of the nitrogen austenite into a phase with reinforced hardness.Type: GrantFiled: February 18, 2010Date of Patent: January 12, 2016Assignee: H.E.F.Inventors: Herve Chavanne, Philippe Maurin-Perrier
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Patent number: 9234270Abstract: An electrostatic chuck, a thin film deposition apparatus including the electrostatic chuck, and a method of manufacturing an organic light emitting display apparatus using the thin film deposition apparatus. The electrostatic chuck includes: a first plate; a first common wire disposed on the first plate and electrically connected to a plus terminal of an electric power source; first electrode patterns electrically connected to the first common wire, separated by a distance from each other, and extending from the first common wire; a second common wire disposed on the first plate and electrically connected to a minus terminal of the electric power source; second electrode patterns electrically connected to the second common wire, separated by a distance from each other, and extending from the second common wire; a first additional wire electrically connected to the first common wire; and a second additional wire electrically connected to the second common wire.Type: GrantFiled: May 8, 2012Date of Patent: January 12, 2016Assignee: Samsung Display Co., Ltd.Inventors: Young-Mook Choi, Jong-Heon Kim, Mu-Hyun Kim, Beohm Rock Choi
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Patent number: 9234271Abstract: A radiation imaging apparatus, comprising a sensor panel including a plurality of sensors arranged on a substrate and configured to detect light, and a scintillator placed over the sensor panel, wherein the scintillator having a concentric characteristics distribution having a center outside an outer edge of the scintillator.Type: GrantFiled: June 30, 2014Date of Patent: January 12, 2016Assignee: CANON KABUSHIKI KAISHAInventors: Keiichi Nomura, Yohei Ishida
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Patent number: 9234272Abstract: Disclosed are a gas barrier film obtained by forming a gas barrier layer on a base material, and a method for producing such a gas barrier film, in which the gas barrier layer contains at least oxygen atoms, silicon atoms and nitrogen atoms, and in connection with the amount of nitrogen, the amount of silicon and the amount of oxygen measured by an XPS analysis, the gas barrier layer includes a first region constituted in the order of the amount of oxygen>the amount of silicon>the amount of nitrogen; a second region constituted in the order of the amount of silicon>the amount of oxygen>the amount of nitrogen; and a third region constituted in the order of the amount of oxygen>the amount of silicon>the amount of nitrogen, from a surface side toward a base material side.Type: GrantFiled: October 12, 2012Date of Patent: January 12, 2016Assignee: LINTEC CORPORATIONInventors: Satoshi Naganawa, Yuta Suzuki
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Patent number: 9234273Abstract: The present invention provides metal-containing compounds that include at least one ?-diketiminate ligand, and methods of making and using the same. In some embodiments, the metal-containing compounds are homoleptic complexes that include unsymmetrical ?-diketiminate ligands. In other embodiments, the metal-containing compounds are heteroleptic complexes including at least one ?-diketiminate ligand. The compounds can be used to deposit metal-containing layers using vapor deposition methods. Vapor deposition systems including the compounds are also provided. Sources for ?-diketiminate ligands are also provided.Type: GrantFiled: November 24, 2010Date of Patent: January 12, 2016Assignee: Micron Technology, Inc.Inventors: Dan Millward, Stefan Uhlenbrock, Timothy A. Quick
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Patent number: 9234274Abstract: Methods for deposition of elemental metal films on surfaces using metal coordination complexes are provided. The metal complexes comprise thiophene, pyrrole or salen-based ligands. A substrate surface may be contacted with a vapor phase metal coordination complex such that a layer is formed on the surface comprising the metal coordination complex bound to the surface by the metal. The bound metal complex may then be contacted with a reducing gas such that an exchange reaction occurs between the bound metal coordination complex and the reducing gas, thereby dissociating the bound metal complex and producing a first layer of elemental metal on the surface of the substrate. The process can be repeated for additional layers.Type: GrantFiled: November 7, 2013Date of Patent: January 12, 2016Assignee: Applied Materials, Inc.Inventors: Bhaskar Jyoti Bhuyan, Anshita Gairola
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Patent number: 9234275Abstract: Provided is a method of forming a film of metal compound of first and second materials on an object to be processed, one of the first and second materials being metal, which includes: supplying a raw material gas containing the first material to the object such that the first material is adsorbed onto the object; supplying a raw material gas containing the second material to the object with the first material adsorbed thereon such that the second material is adsorbed onto the object with the first material adsorbed thereon; and supplying a third material different from the first and second materials onto the first and second materials adsorbed onto the object such that the first to third materials are chemically combined with one another.Type: GrantFiled: December 11, 2013Date of Patent: January 12, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Yoshihiro Takezawa, Katsushige Harada
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Patent number: 9234276Abstract: Provided are methods and systems for providing silicon carbide class of films. The composition of the silicon carbide film can be controlled by the choice of the combination of precursors and the ratio of flow rates between the precursors. The silicon carbide films can be deposited on a substrate by flowing two different organo-silicon precursors to mix together in a reaction chamber. The organo-silicon precursors react with one or more radicals in a substantially low energy state to form the silicon carbide film. The one or more radicals can be formed in a remote plasma source.Type: GrantFiled: May 31, 2013Date of Patent: January 12, 2016Assignee: Novellus Systems, Inc.Inventor: Bhadri N. Varadarajan
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Patent number: 9234277Abstract: A method of manufacturing a semiconductor device is disclosed. The method includes forming a thin film having a borazine ring skeleton and containing a predetermined element, boron, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas containing the predetermined element and a halogen element to the substrate; supplying a reaction gas including an organic borazine compound to the substrate; and supplying a carbon-containing gas to the substrate. In addition, the cycle is performed under a condition in which the borazine ring skeleton in the organic borazine compound is maintained.Type: GrantFiled: March 5, 2014Date of Patent: January 12, 2016Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Yoshiro Hirose, Ryuji Yamamoto, Atsushi Sano
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Patent number: 9234278Abstract: The present disclosure relates to a guiding element for guiding gas flow within a chamber. The guiding element includes a structure, one or more inlets, an outlet, and a transportation region. The one or more inlets are formed on a first side of the structure. The inlets have inlet sizes selected according to a removal rate and to mitigate gas flow variations within the chamber. The outlet is on a second side of the structure, opposite the first side of the structure. The outlet has an outlet size selected according to the removal rate. The transportation region is within the structure and couples or connects the inlets to the outlet.Type: GrantFiled: January 20, 2012Date of Patent: January 12, 2016Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: You-Hua Chou, Chih-Tsung Lee, Chia-Ho Chen, Chin-Hsiang Lin
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Patent number: 9234279Abstract: A vapor deposition system includes a deposition chamber having a substrate positioned therein. The system includes at least one vessel containing at least one silsesquioxane precursor. The system includes at least one vessel containing at least one wetting agent or surfactant. The system includes at least one vessel containing a carboxylic acid or nitrogen base. The system includes a source for at least one reaction gas.Type: GrantFiled: August 28, 2014Date of Patent: January 12, 2016Assignee: Micron Technology, Inc.Inventor: Eugene P. Marsh
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Patent number: 9234280Abstract: A susceptor support shaft for an epitaxial growth apparatus capable of forming a high quality epitaxial film by suppressing in-plane resistance variation of the epitaxial film due to deflection of a susceptor, wherein the susceptor support shaft supports a susceptor at an underneath portion of the susceptor in an epitaxial growth apparatus. The susceptor support shaft includes a support column located substantially coaxial with a center of the susceptor; a plurality of arms extending radially from the support column to positions under a peripheral portion of the susceptor; an arm connecting member connecting tips of the arms next to each other; and support pins extending from the arm connecting member, thereby supporting the susceptor.Type: GrantFiled: April 12, 2012Date of Patent: January 12, 2016Assignee: SUMCO CorporationInventors: Akihiko Shimizu, Fumihiko Kimura, Takeshi Masuda
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Patent number: 9234281Abstract: The invention relates to a liquid-phase method for the thermal production of silicon layers on a substrate, wherein at least one higher silicon that can be produced from at least one hydridosilane of the generic formula SiaH2a+2 (with a=3-10) being applied to a substrate and then being thermally converted to a layer that substantially consists of silicon, the thermal conversion of the higher silane proceeding at a temperature of 500-900° C. and a conversion time of ?5 minutes. The invention also relates to silicon layers producible according to said method and to their use.Type: GrantFiled: November 10, 2010Date of Patent: January 12, 2016Assignee: Evonik Degussa GmbHInventors: Stephan Wieber, Matthias Patz, Reinhard Carius, Torsten Bronger, Michael Cölle
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Patent number: 9234282Abstract: Stable zero-valent metal compositions and methods of making and using these compositions are provided. Such compositions are useful as catalysts for subsequent metallization of non-conductive substrates, and are particularly useful in the manufacture of electronic devices.Type: GrantFiled: November 26, 2013Date of Patent: January 12, 2016Assignee: Rohm and Haas Electronic Materials LLCInventors: Maria Anna Rzeznik, Feng Liu
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Patent number: 9234283Abstract: The corrosion resistance of a metal substrate surface treated with an acidic aqueous composition to form a conversion coating is improved by first contacting the surface with an oxidizing acidic pre-rinse, such as an aqueous solution of nitric acid and hydrogen peroxide, or nitric acid and hydrofluoric acid, or Fe+3 cations and hydrofluoric acid.Type: GrantFiled: February 12, 2008Date of Patent: January 12, 2016Assignee: Henkel AG & Co. KGaAInventors: Todd R. Bryden, Jeng-Li Liang, Jianping Liu, John Zimmerman, Edis Kapic, Bruce Goodreau
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Patent number: 9234284Abstract: An electrical discharge surface treatment method for forming a coating film by generating a pulsed electrical discharge between an electrode and a workpiece in working fluid or gas using a green compact obtained by molding metal powder or metal alloy powder or a molded body obtained by heating the green compact as the electrode, and by melting an electrode material by an energy of the pulsed electrical discharge, forming a coating of the electrode material or a coating of a material obtained by a reaction of the electrode material by the energy of the pulsed electrical discharge on a surface of the workpiece, the electrical discharge surface treatment method includes generating the pulsed electrical discharge by mixing together two or more types of pulsed electrical discharges having different energies.Type: GrantFiled: August 6, 2008Date of Patent: January 12, 2016Assignee: Mitsubishi Electric CorporationInventors: Akihiro Goto, Kazushi Nakamura, Masahiro Okane, Hiroyuki Teramoto
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Patent number: 9234285Abstract: A method of using clathrate hydrates (including ammonia clathrates), in electrochemical transformations. Noted are converting clathrate guest molecules such as CO2, CH4, alkanes, and alkenes; and, optionally, the use of clathrates-promoting molecules such as tetra hydro furan, to produce higher value carbon molecules including propane and formic acid.Type: GrantFiled: January 13, 2015Date of Patent: January 12, 2016Assignee: Brown UniversityInventors: Christoph Rose-Petruck, G. Tayhas R. Palmore, Daniel DeCiccio, Steven Ahn
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Patent number: 9234286Abstract: An aluminum production electrolytic cell (14) comprises a bath (20) with bath contents (18), at least one cathode electrode (22) in contact with said contents (18), at least one anode electrode (16) in contact with said contents (18), and a hood (36), defining interior area (36a), covering at least a portion of said bath (20). The electrolytic cell (14) is equipped for effluent gases to be drawn from said interior area (36a). The electrolytic cell (14) also comprises at least one heat exchanger (74) for cooling at least a portion of the gases drawn from interior area (36a), prior to circulation thereof to interior area (36a) through at least one distribution device (90).Type: GrantFiled: March 27, 2013Date of Patent: January 12, 2016Assignee: ALSTOM Technology LtdInventors: Geir Wedde, Odd E. Bjarno, Anders K. Sorhuus
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Patent number: 9234287Abstract: A contact bar and related techniques allow enhanced electrolytic refining of metals, e.g. avoiding or reducing electrical short circuits. The contact bar is adapted to rest on an insulating capping board for contacting symmetrical electrodes to provide locations for electrical contact therewith. The contact bar includes a central portion laying on the capping board and branch portions extending laterally outward from the central portion, such that the branch portions fit in between seats of the capping board. The contact bar may include a retention member enabling to reduce lateral movement of the electrodes, and may include a plurality of apertures to engage corresponding holding arms of the capping board. There may be a plurality of adjacent similar contact bar segments.Type: GrantFiled: July 12, 2012Date of Patent: January 12, 2016Assignee: Pultrusion Technique Inc.Inventor: Robert Dufresne
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Patent number: 9234288Abstract: In one aspect, the present invention is directed to apparatuses for and methods of conducting electrical current in an oxygen and liquid metal environment. In another aspect, the invention relates to methods for production of metals from their oxides comprising providing a cathode in electrical contact with a molten electrolyte, providing a liquid metal anode separated from the cathode and the molten electrolyte by a solid oxygen ion conducting membrane, providing a current collector at the anode, and establishing a potential between the cathode and the anode.Type: GrantFiled: August 31, 2012Date of Patent: January 12, 2016Assignees: Infinium, Inc., The Trustees of Boston UniversityInventors: Adam Clayton Powell, IV, Soobhankar Pati, Stephen Joseph Derezinski, Garrett Lau, Uday B. Pal, Xiaofei Guan, Srikanth Gopalan
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Patent number: 9234289Abstract: A method for manufacturing a molding core includes: providing a cylindrical roller having a circumference surface coated with a first film layer; coating a second film layer on the first film layer; coating a preprocessed molding film on the second film layer; engraving a number of molding patterns on the preprocessed molding film to obtain a molding film; separating the molding film from the roller and spreading out the molding film to be a flat plate; and manufacturing the molding core using the molding film by electroforming method.Type: GrantFiled: July 29, 2013Date of Patent: January 12, 2016Assignee: HON HAI PRECISION INDUSTRY CO., LTD.Inventor: Chia-Ling Hsu
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Patent number: 9234290Abstract: The present invention relates to an electrolyte solution comprising at least one solvent as component A, at least one electrolyte as component B and from 0.1 to 20% by weight, based on the total electrolyte solution, of at least one heteroaromatic compound of the general formula (I) as component C, the use of such a compound in electrolyte solutions, the use of such an electrolyte solution in an electrochemical cell or for metal plating, and also electrochemical cells comprising a corresponding electrolyte solution.Type: GrantFiled: December 3, 2014Date of Patent: January 12, 2016Assignee: BASF SEInventors: Xiao Steimle, Itamar Michael Malkowsky, Klaus Leitner
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Patent number: 9234291Abstract: Techniques for electrodepositing zinc (Zn)-containing films are provided. In one aspect, a method of preparing a Zn electroplating solution is provided. The method includes the following steps. The solution is formed from a mixture of at least one zinc salt, a sulfonic acid and a solvent. The sulfonic acid is quenched with a base. A pH of the solution is adjusted to be either less than about 3.5 or greater than about 8.0. The pH of the solution can be adjusted by adding additional sulfonic acid to the solution to adjust the pH of the solution to be less than about 3.5 or by adding a second base to the solution to adjust the pH of the solution to be greater than about 8.0. A Zn electroplating solution and an electroplating method are also provided.Type: GrantFiled: September 9, 2010Date of Patent: January 12, 2016Assignee: GLOBALFOUNDRIES INC.Inventors: Shafaat Ahmed, Hariklia Deligianni
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Patent number: 9234292Abstract: A nickel-iron alloy plating solution which can suppress, in a nickel-iron alloy plating solution containing divalent iron ions and divalent nickel ions, oxidation of divalent iron ions to trivalent iron ions and can prevent the occurrence of the precipitation of iron (III) hydroxide to allow stable continuous operation and also to provide a nickel-iron alloy plating solution which allows production of a soft magnetic film which is stable in composition. The nickel-iron alloy plating solution of the present invention is characterized in that it comprises divalent iron ions, divalent nickel ions and a hydroxylamine salt and has a pH of 3.0 or lower.Type: GrantFiled: October 25, 2010Date of Patent: January 12, 2016Assignee: JX NIPPON MINING & METALS CORPORATIONInventors: Masaomi Murakami, Junnosuke Sekiguchi
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Patent number: 9234293Abstract: Processes and systems for electrolytically processing a microfeature workpiece with a first processing fluid and a counter electrode are described. Microfeature workpieces are electrolytically processed using a first processing fluid, a counter electrode, a second processing fluid, and an anion permeable barrier layer. The anion permeable barrier layer separates the first processing fluid from the second processing fluid while allowing certain anionic species to transfer between the two fluids.Type: GrantFiled: October 6, 2014Date of Patent: January 12, 2016Assignee: APPLIED Materials, Inc.Inventors: Rajesh Baskaran, Robert W. Batz, Jr., Bioh Kim, Thomas L. Ritzdorf, John Lee Klocke, Kyle M. Hanson
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Patent number: 9234294Abstract: A method of making property modulated composite materials includes depositing a first layer of material having a first microstructure/nanostructure on a substrate followed by depositing a second layer of material having a second microstructure/nanostructure that differs from the first layer. Multiple first and second layers can be deposited to form a composite material that includes a plurality of adjacent first and second layers. By controlling the microstructure/nanostructure of the layers, the material properties of the composite material formed by this method can be tailored for a specific use. The microstructures/nanostructures of the composite materials may be defined by one or more of grain size, grain boundary geometry, crystal orientation, and a defect density.Type: GrantFiled: July 7, 2009Date of Patent: January 12, 2016Assignee: Modumetal, Inc.Inventors: John Whitaker, Zhi Liang Bao
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Patent number: 9234295Abstract: The method of forming an oxidation resistant coating layer is for forming an oxidation resistant coating layer containing aluminum on a surface layer of a member (A) formed of metallic material. The method includes a plating treatment step (S1) of plating aluminum on a surface of the member (A) in a solvent, and a heat treatment step (S2) of heat-treating the member (A) whose surface has been plated by the plating treatment step (S1).Type: GrantFiled: March 23, 2011Date of Patent: January 12, 2016Assignee: IHI CORPORATIONInventors: Akihiro Sato, Yoshihiro Tsuda, Hiroaki Iwata, Akira Tateno, Hiroki Yoshizawa, Tetsuji Hirato
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Patent number: 9234296Abstract: The present invention is a semiconductor single crystal manufacturing apparatus including, within a growth furnace main body, a crucible, and a heater disposed around the crucible, wherein a heat insulating cylinder is disposed around the heater within the growth furnace main body, the heat insulating cylinder includes a step portion dividing the heat insulating cylinder into the upper part and the lower part at the inside surface thereof, the inner diameter of the lower part is larger than the inner diameter of the upper part, a heat insulating plate is disposed below the heater and on the inside of the lower part of the heat insulating cylinder within the growth furnace main body, and the diameter of the heat insulating plate is larger than the inner diameter of the upper part of the heat insulating cylinder and is smaller than the inner diameter of the lower part.Type: GrantFiled: July 6, 2011Date of Patent: January 12, 2016Assignee: SHIN-ETSU HANDOTAI CO., LTD.Inventors: Shou Takashima, Yuuichi Miyahara, Atsushi Iwasaki, Nobuaki Mitamura, Susumu Sonokawa
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Patent number: 9234297Abstract: Provided are a method for manufacturing a SiC single crystal having high crystal quality and, in particular, extremely low screw dislocation density and a SiC single crystal ingot obtained by the method. In particular, provided is a silicon carbide single crystal substrate that is a substrate cut from a bulk silicon carbide single crystal grown by the Physical Vapior Transport (PVT) method, in which the screw dislocation density is smaller in the peripheral region than in the center region, so that screw dislocations are partially reduced. The method is a method for manufacturing a SiC single crystal by the PVT method using a seed crystal and the ingot is a SiC single crystal ingot obtained by the method. Particularly, the silicon carbide single crystal substrate is a silicon carbide single crystal substrate in which when, by representing the diameter of the substrate as R, a center circle region having a diameter of 0.Type: GrantFiled: August 29, 2012Date of Patent: January 12, 2016Assignee: NIPPON STEEL & SUMITOMO METAL CORPORATIONInventors: Shinya Sato, Tatsuo Fujimoto, Hiroshi Tsuge, Masakazu Katsuno
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Patent number: 9234298Abstract: A method for growing a single crystal in a chamber. The method includes heating raw material to form a melt for forming the single crystal. A crystal seed is then inserted into the melt and pulled from the melt to form a partial ingot, wherein the partial ingot radiates heat. An amount of gas is then introduced into the chamber which corresponds to a size of the partial ingot so as to provide a constant crystallization rate.Type: GrantFiled: October 12, 2012Date of Patent: January 12, 2016Assignee: Siemens Medical Solutions USA, Inc.Inventor: Keith Ritter
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Patent number: 9234299Abstract: A method for producing a group III nitride single crystal (ingot) includes providing a seed crystal comprising a first crystal face that is perpendicular to a growth direction of the single crystal and has a first predetermined area, and a second crystal face that is inclined to the growth direction and has a second predetermined area and growing the group III nitride single crystal on the first crystal face and the second crystal face by controlling a growth condition of the single crystal so as not to change the first predetermined area and the second predetermined area. A method for producing a group III nitride single crystal substrate includes further cutting the group III nitride single crystal substrate off from the grown group III nitride single crystal (ingot).Type: GrantFiled: December 20, 2007Date of Patent: January 12, 2016Assignee: SCIOCS COMPANY LIMITEDInventor: Takehiro Yoshida
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Patent number: 9234300Abstract: In accordance with the invention, there are image forming apparatuses, fuser members, and methods of making fuser members. The fuser member can include a substrate and an electrospun layer disposed over the substrate, the electrospun layer including a structure selected from a group consisting of a fiber-on-fiber structure, a bead-on-fiber structure, and a pop-corn structure, wherein the fuser member includes a top surface that is both hydrophobic and oleophobic.Type: GrantFiled: December 16, 2008Date of Patent: January 12, 2016Assignee: XEROX CORPORATIONInventors: Kock-Yee Law, Hong Zhao