Abstract: The present invention relates generally to an assay for detecting and differentiating multiple analytes, if present, in a single fluid sample, including devices and methods therefore.

Abstract: A method for detecting in vitro the presence of a genome of a DNA virus or a viral derived DNA in an infected eukaryotic cell, tissue or biological fluid using Molecular Combing or other nucleic acid stretching methods together with probes, especially nucleic acid probes, having a special design. A method for monitoring in vitro the effects of anti-viral treatment by following the presence of genomic viral or viral derived DNA polynucleotides in a virus-infected cell, tissue or biological fluid. Detection of an infectious form of a virus using Molecular Combing and DNA hybridization. A kit comprising probes used to carry out these methods and a composition comprising the probes.

Abstract: A process for stable fermentation of CO-containing substrates and improved ethanol productivity includes providing medium components in amounts needed by microorganisms in the fermentation. The process includes determining a potassium concentration in the fermentation medium and providing a first medium and a second medium to the fermentation, the first medium provided at a rate effective for maintaining the potassium in the fermentation medium in a range of about 20 to about 200 mg/L until reaching a target cell density.

Abstract: The present invention relates to a particulate inoculant for treating liquid cast-iron, comprising, on the one hand, support particles made of a fusible material in the liquid cast-iron, and on the other hand, surface particles made of a material that promotes the germination and the growth of graphite, disposed and distributed in a discontinuous manner at the surface of the support particles, the surface particles presenting a grain size distribution such that their diameter d50 is smaller than or equal to one-tenth of the diameter d50 of the support particles.

Abstract: A system thermally treats rails. The system has a cooling device for spraying a cooling medium onto a rail to be treated. The cooling device defines a cooling path for receiving the rail to be treated. A conveyor moves the rail to be thermally treated through the cooling path. A vertically displacing device for displacing at least one of the cooling devices for adjusting a position of the one cooling device relative to the rail to be treated.

Abstract: The present disclosure relates to a hot-forming apparatus for producing a press-hardened shaped component from a blank, with a furnace for heating the blank and a pressing device for forming and cooling the blank heated in the furnace, wherein the hot-forming apparatus has, arranged upstream of the furnace, a preheating roll truing device with a temperature-controllable roller for straightening and preheating the blank. The invention further relates to a method for producing a press-hardened shaped component from a blank, wherein the blank is heated in a furnace and the heated blank is then formed and cooled in a pressing device, and wherein, prior to heating in the furnace, the blank is straightened and preheated by means of a temperature-controllable roller of a preheating roll truing device.

Abstract: A high-strength galvanized steel sheet has a chemical composition containing, by mass %, C: 0.16% or more and 0.24% or less, Si: 0.8% or more and 1.8% or less, Mn: 1.0% or more and 3.0% or less, P: 0.020% or less, S: 0.0040% or less, Al: 0.01% or more and 0.1% or less, N: 0.01% or less, Ca: 0.0001% or more and 0.0020% or less, and the balance including Fe and incidental impurities, and a microstructure, in which the total area ratio of a ferrite phase and a bainite phase with respect to the whole microstructure is 30% or more and 70% or less, in which the area ratio of a tempered martensite phase with respect to the whole microstructure is 20% or more and 40% or less, in which the area ratio of a retained austenite phase with respect to the whole microstructure is 10% or more and 20% or less, and in which the area ratio of a martensite phase with respect to the whole microstructure is 2% or more and 20% or less.

Abstract: The present invention extracts precious metals from an acidic solution containing precious metals in an early and highly efficient manner. Provided is an extraction agent for precious metals that is represented by the general formula below. In the formula, R1 and R2 each represent the same alkyl group or different alkyl groups, R3 represents a hydrogen atom or an alkyl group, and R4 represents a hydrogen atom or a discretionary group that is not an amino group and that bonds to ? carbon as an amino acid. By subjecting an acidic solution containing precious metals to solvent extraction using the extraction agent for precious metals, a plurality of precious metals can be recovered all at once from a solution containing a large amount of various impurities.

Abstract: A method for removal of organic coatings from loose aluminum scrap includes passing the scrap through a Multiple Hearth Furnace operatively maintained in the range of 500° F.-1600° F. Each hearth in the furnace is independently temperature controlled and held under a slightly negative pressure environment. The hearths heat the scrap such that pyrolysis of the coatings occurs within the hearth. Organic compounds liberated during this process are partially or entirely consumed within the furnace combustion products are exhausted through the top. Hydrogen fluoride contained in the products of combustion is incinerated prior to final discharge from the system and routing to additional environmental equipment for particle removal. Scrap is continuously fed into the top of the furnace, and agitated and mechanically moved within each hearth toward an output of another hearth therebelow. The agitation and movement of the scrap exposes the scrap to the hearth atmosphere to assist in processing of the scrap.

Abstract: The present invention effectively recover high-grade scandium from nickel oxide ores. The present invention includes a leaching step (S1) for charging nickel oxide ores and sulfuric acid into a pressurized vessel, a neutralizing step (S2) for adding a neutralizing agent to the leachate to obtain a neutralized precipitate and a neutralized liquid, a sulfidizing step (S3) for adding a sulfidizing agent to the neutralized liquid, an ion exchange step (S4) for bringing the sulfidized solution into contact with a chelate resin, a solvent extraction step (S6) for bringing a Sc eluent into contact with an extracting agent, a Sc precipitation Step (S7) for adding a neutralizing agent or oxalic acid to a stripping solution, and a calcination step (S8) for drying and calcining a precipitate to obtain scandium oxide.

Abstract: The present invention relates to a method for complex processing of apatite concentrate resulting in producing concentrate of rare earth metals (REM) and plaster from phosphogypsum, a waste of sulphuric acid technology for producing phosphoric acid from apatite. The method comprises leaching of REM into solution by recrystallization of hemihydrate or anhydrite of calcium sulphate into dihydrate of calcium sulphate with a soluble calcium salt at concentrations of 0.075-3.75 M (in terms of Ca2+) and strong acid (pKa0) at a concentration of 0.2-8.0 M (in terms of H+). Recovery of REM into solution is up to 98%, the residual content of impurities of phosphorus, fluorine and alkali metals in dihydrate of calcium sulphate does not exceed 0.3 wt. %, 0.1 wt. %, 0.05 wt. %, respectively.

Abstract: A sintered friction material for use in a high-speed railway is manufactured using a Cu alloy powder produced using an atomizing method from a Cu alloy containing 0.1 to 2.0 mass % of Fe. This friction material has both sufficient high strength and high thermal conductivity.

Abstract: A hot-rolled copper plate consists of pure copper having a purity of 99.99 mass % or greater, the hot-rolled copper plate having an average crystal grain diameter of 40 ?m or less, and a (?3+?9) grain boundary length ratio (L ?3+?9)/L), which is a ratio between a total crystal grain boundary length L measured by an EBSD method and a sum L (?3+?9) of a ?3 grain boundary length L?3 and a ?9 grain boundary length L?9, being 28% or greater.

Abstract: An Al—Zn-coated steel sheet that suppresses blistering and offers good corrosion resistance after painting is provided. The Al—Zn-coated steel sheet includes an Al—Zn coating layer on a steel sheet surface, the Al—Zn coating layer including two layers which are an interfacial alloy layer present in an interface with a base steel sheet and an upper layer disposed on the interfacial alloy layer. The upper layer contains compounds of Si and Ca or Si, Ca, and Al, and Ca/Si mass % ratio in the upper layer is 0.72 to 1.4. The interfacial alloy layer contains an Fe—Al compound and/or an Fe—Al—Si compound. In the upper layer, Si content is 0.1 to 2.0 mass % and Ca content is 0.001 to 2.0 mass %.

Abstract: A method for manufacturing a superior 13Cr thickened drillrod comprises the following steps: firstly, thickening the ends of a steel tube with a composition so as to obtain a drillrod with thickened ends, the composition in percentage by weight being: C: 0.01-0.05%, Si?0.5%, Mn: 0.2-1.0%, Cr: 12-14%, Mo: 1-3%, Ni: 4-6%, and a balance of Fe and inevitable impurities; after heating the tube as a whole to 950-1000° C., air cooling same and tempering same at 600-650° C.; and machining the two thickened ends respectively into an externally threaded drillrod coupler and an internally threaded drillrod coupler; wherein the tube end thickening is an external thickening, including three rounds of heating and three rounds of thickening, with at least one pass of deformation for each round, and the heating temperature being 1150-1200° C.

Abstract: A bearing steel composition comprising: (a) from 0.1 to 0.2 wt % C, (b) from 3.25 to 4.25 wt % Cr, (c) from 9.5 to 11.5 wt % Mo, (d) from 5.75 to 6.75 wt % W, (e) from 1.5 to 2.5 wt % V, (f) from 2.5 to 3.5 wt % Ni, and (g) the balance iron, together with unavoidable impurities. The bearing steel composition can optional include at least one of the following elements: (1) from 0-1 wt. % Mn, (2) from 0-1 wt. % N, (3) from 0-1 wt. % Si, (4) from 0-1 wt. % Co, (5) from 0-1 wt. % Al, (6) from 0-0.1 wt. % S, and (7) from 0-0.1 wt. % P.

Abstract: An aluminum alloy sheet for press forming includes an aluminum alloy including 0.4 to 1.5 mass % of Si and 0.3 to 1.0 mass % of Mg, with the remainder being Al and inevitable impurities. With respect to diagonal lengths of indentations formed therein with a Vickers hardness tester, a proportion P (%) of a difference ?L between a length L0 of a diagonal which forms an angle of 0° with a rolling direction and a length L45 of a diagonal which forms an angle of 45° with the rolling direction to the L0 is 2.0% or less.

Abstract: Aluminum alloys are provided that can comprise boron and vanadium and high amounts of titanium and zirconium. The aluminum alloys described herein can exhibit superior tensile properties at both room temperature and elevated temperatures and still maintain desirable ductility. The aluminum alloys can be used in applications where resistance to fatigue and breakdown at elevated temperatures is desirable, which includes applications in the aerospace and aeronautical fields.

Abstract: The disclosure is directed to Ni—P—Si alloys bearing Mn and optionally Cr, Mo, Nb, and Ta that are capable of forming a metallic glass, and more particularly demonstrate critical rod diameters for glass formation greater than 1 mm and as large as 5 mm or larger.

Abstract: Methods of refining the grain size of a titanium alloy workpiece include beta annealing the workpiece, cooling the beta annealed workpiece to a temperature below the beta transus temperature of the titanium alloy, and high strain rate multi-axis forging the workpiece. High strain rate multi-axis forging is employed until a total strain of at least 1 is achieved in the titanium alloy workpiece, or until a total strain of at least 1 and up to 3.5 is achieved in the titanium alloy workpiece. The titanium alloy of the workpiece may comprise at least one of grain pinning alloying additions and beta stabilizing content effective to decrease alpha phase precipitation and growth kinetics.

Abstract: A high-strength galvannealed steel sheet has a chemical composition containing, by mass %, C: 0.14% or more and 0.24% or less, Si: 0.8% or more and 1.8% or less, Mn: 1.0% or more and 3.0% or less, P: 0.020% or less, S: 0.0040% or less, Al: 0.01% or more and 0.1% or less, N: 0.01% or less, Ca: 0.0001% or more and 0.

Abstract: A method of fabricating a precoated steel plate is provided. The method includes coating a steel plate by dipping the steel plate in a molten bath to obtain a precoat upon the steel plate. The precoat consists of an intermetallic alloy layer and a metal alloy layer, the intermetallic alloy layer is topped by the metal alloy layer. On at least one face of the plate, the metal alloy layer is removed in an area at a periphery of the plate using a laser beam, while at least part of the intermetallic alloy layer is left in the area. The step of removing includes measuring a characteristic of the laser or an area where the metal alloy area is to be removed to obtain a measured value, comparing the measured value with a reference value and stopping a removal operation to leave the at least part of the intermetallic alloy in place as function of the comparing step. Additional methods are also provided.

Abstract: The invention relates to equipment for cooling a metal strip (2) having a liquid coating to be solidified, wherein said strip is continuously moving. Said equipment is characterized in that each half-cooler (11, 12) is divided, over the length thereof, into at least two sections, a first section (13) and a second section (14), in the direction of the movement of the strip (2). The first section (13) is separated from the second section (14) in each half-cooler (11, 12) by a respective internal adjustment device (7, 8), making it possible to change the gas flow/pressure parameter so that the value of said gas flow/pressure parameter is different in the first section (13) from the value of said parameter in the second section (14).

Abstract: Provided in one embodiment is a method for producing a composition, the method comprising forming a coating material on a substrate using a first material and a second material; wherein the coating material comprises an amorphous alloy and the second material, the first material is adapted to form the amorphous alloy, the first material is at a first temperature during the forming process, and the first temperature is lower than a melting temperature of the second material.

Abstract: A method and apparatus for forming a coating on a surface of a superalloy substrate area of a gas turbine engine component, and the component produced by the method, includes providing a slurry with selected metal powders suspended in a silane containing solution, applying the slurry by brushing, spraying or 3D printing using a piezoelectric dot matrix printhead to the superalloy substrate, drying the applied slurry, and depending on the aluminum content desired in the coating, including a sufficient amount of aluminum in the slurry or aluminiding the coated component. The method and apparatus can be used to obtain components having different superalloy coating thicknesses or compositions in different areas of the component based on the particular operating environment for each area with a single heat treatment and/or aluminiding cycle for obtaining the different coatings.

Abstract: There are provided a vapor deposition mask capable of satisfying both high definition and lightweight in upsizing and forming a vapor deposition pattern with high definition while securing strength, a vapor deposition mask preparation body capable of simply producing the vapor deposition mask and a method for producing a vapor deposition mask, and furthermore, a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition. A metal mask 10 in which a slit 15 is provided and a resin mask 20 in which openings 25 corresponding to a pattern to be produced by vapor deposition are provided at a position of overlapping with the slit 15 are stacked, and the metal mask 10 has a general region 10a in which the slit 15 is provided and a thick region 10b larger in thickness than the general region.

Abstract: In a surface-coated boron nitride sintered body tool, at least a cutting edge portion includes a cubic boron nitride sintered body and a coating layer formed on a surface of the cubic boron nitride sintered body. A layer B of the coating layer is formed by alternately laminating one or more layers of each of two or more thin-film layers having different compositions. A B1 thin-film layer as one of the thin-film layers has a thickness more than 30 nm and less than 200 nm. A B2 thin-film layer as one of the thin-film layers different from the B1 thin-film layer is formed by alternately laminating one or more layers of each of two or more compound layers having different compositions. Each of the compound layers has a thickness not less than 0.5 nm and less than 30 nm.

Abstract: The present invention is to provide a deposition device capable of coping with a size change of a substrate only by replacing a magnet unit and a target material. A deposition device (1) of the present invention is to perform deposition onto a surface of a substrate W to be conveyed by using an evaporation source (2) facing a front surface of the substrate (W), and the evaporation source (2) has a target material (7), a backing plate (8), a magnet unit (9), a cathode body (10), and a cooling water flow passage (12). The cooling water flow passage (12) is a space formed by separating the magnet unit (9) and the backing plate (8), and the cooling water can be distributed through this space. As the magnet unit (9), a short magnet unit can be arranged in correspondence with a narrow-width substrate having narrower width than that of the substrate (W), and as the target material (7), a short target material is arranged in correspondence with width of the arrange magnet unit (9).

Abstract: A linear evaporation apparatus includes a thermal insulation chamber, and crucibles, evaporation material heaters and a mixing chamber installed in the thermal insulation chamber. The mixing chamber includes a flow limiting and adjusting layer, a flow channel adjusting member, a mixed layer and a linear evaporation layer. The flow limiting and adjusting layer is a rectangular sheet with flow limit holes corresponsive to the crucibles respectively; the flow channel adjusting member is an interconnected structure having at least one flow inlet corresponsive to some of the flow limit holes and at least one flow outlet, and the mixed layer is a substantially I-shaped sheet structure, and the linear evaporation layer is a rectangular sheet having a linear source evaporation opening tapered from both ends to the middle, so as to improve the uniformity of the thin film and the utilization of the evaporation materials.

Abstract: A sputtering device 1 includes: a vacuum chamber 2; a plurality of targets 8 (8a to 8d); a shield 9 that selectively exposes, to the inside of the vacuum chamber 2, only a target 8c out of which a film is to be formed; a substrate holding unit 11 that holds a substrate 10 on which fine particles ejected from the target 8c are deposited to form a film; a first transfer unit 14 that fixedly holds and moves the substrate holding unit 11; a mask 16 disposed between the substrate 10 and the target 8c; a second transfer unit 19 that moves the mask 16; and a plurality of through-hole units 17a to 17f having patterned through holes 17 penetrating through the mask 16.

Abstract: Embodiments described herein provide for electrically reconfigurable deposition masks. One embodiment is a deposition mask that includes a plurality of electrical elements. Each of the electrical elements has an opening between a top surface and a bottom surface that constricts based on an electrical signal. A plurality of top surfaces of the electrical elements defines a top surface of the mask, and a plurality of bottom surface of the electrical elements defines a bottom surface of the mask.

Abstract: An organic layer not containing halogen is formed on a substrate using a coating material, and a silicon nitride layer is formed on the organic layer by plasma CVD. Owing to the configuration, there is provided a functional film manufacturing method capable of stably manufacturing a high-performance functional film such as a gas barrier film having excellent gas barrier properties, as well as a functional film.

Abstract: In a film formation method, a mist of a solution is sprayed onto a substrate to form a film on the substrate. A film formation is then suspended. The substrate is then exposed to plasma.

Abstract: Embodiments of the present invention provide hydrogen-free dielectric films and methods of fabrication. A hydrogen-free precursor, such as tetraisocyanatosilane, and hydrogen-free reactants, such as nitrogen, oxygen (O2/O3) and nitrous oxide are used with chemical vapor deposition processes (PECVD, thermal CVD, SACVD, HDP CVD, and PE and Thermal ALD) to create hydrogen-free dielectric films. In some embodiments, there are multilayer dielectric films with sublayers of various materials such as silicon oxide, silicon nitride, and silicon oxynitride. In embodiments, the hydrogen-free reactants may include Tetra Isocyanato Silane, along with a hydrogen-free gas including, but not limited to, N2, O2, O3, N2O, CO2, CO and a combination thereof of these H-Free gases. Plasma may be used to enhance the reaction between the TICS and the other H-free gasses. The plasma may be controlled during film deposition to achieve variable density within each sublayer of the films.

Abstract: A processing apparatus includes a plurality of first gas supply channels configured to supply a plurality of gases to the process chamber, a second gas supply channel configured to supply a gas to the process chamber, the gas being used in processing the target substrate, a plurality of first valves configured to open and close the plurality of first gas supply channels, a second valve configured to open and close the second gas supply channel, and a controller. One of the plurality of first valves is a follow-up target valve. The controller controls opening/closing operation of the plurality of first valves such that opening durations of the plurality of first valves do not overlap with each other, and controls opening/closing operation of the second valve such that opening duration of the second valve has a predetermined time relationship with opening duration of the follow-up target valve.

Abstract: A nozzle for uniform plasma processing comprises an inlet portion and an outlet portion. The inlet portion has a side surface substantially parallel to a vertical axis. The inlet portion comprises a plurality of gas channels. The outlet portion is coupled to the inlet portion. The outlet portion comprises a plurality of outlets. At least one of the outlets is at an angle other than a right angle relative to the vertical axis.

Abstract: A deposition source nozzle including a convergence guide configured to guide a deposition source material discharged from the deposition source nozzle to a convergence direction with respect to the deposition source nozzle, and a divergence guide configured to guide the deposition source material discharged from the deposition source nozzle to a divergence direction with respect to the deposition source nozzle, the divergence direction being opposite to the convergence direction with respect to the discharging direction of the deposition source material.

Abstract: A showerhead for a semiconductor processing reactor formed by an array of showerhead tiles. Each showerhead tile has a plurality of process gas apertures, which may be in a central area of the tile or may extend over the entire tile. Each showerhead tile can be dimensioned for processing a respective substrate or a plurality of substrates or the array can be dimensioned for processing a substrate. An exhaust region surrounds the process gas apertures. The exhaust region has at least one exhaust aperture, and may include an exhaust slot, a plurality of connected exhaust slots or a plurality of exhaust apertures. The exhaust region surrounds the array of showerhead tiles, or a respective portion of the exhaust region surrounds the plurality of process gas apertures in each showerhead tile or group of showerhead tiles. A gas curtain aperture may be between the exhaust region and the process gas apertures of one of the showerhead tiles or adjacent to the central area of the tile.

Abstract: Embodiments of an obstructing member and methods for its use in a fluidized bed reactor are disclosed. The obstructing member comprises a plurality of receiving members, each receiving member comprising a tubular wall defining a passageway dimensioned to receive an internal reactor component, and a plurality of connecting elements connecting the receiving members, wherein the obstructing member occupies from 15-60% of a horizontal cross-section of a reaction chamber of the fluidized bed reactor.

Abstract: Methods and systems are provided for fabricating polymer-based imprint lithography templates having thin metallic or oxide coated patterning surfaces. Such templates show enhanced fluid spreading and filling (even in absence of purging gases), good release properties, and longevity of use. Methods and systems for fabricating oxide coated versions, in particular, can be performed under atmospheric pressure conditions, allowing for lower cost processing and enhanced throughput.

Abstract: A process control method is provided for performing a deposition process on a plurality of wafers of a batch. The process control method includes: deciding a placement location of the wafers of the batch according to the history information of a tool and the product information of the batch; calculating a target value of each placement location according to the placement location of the wafers of the batch and the history information of the tool; calculating a process parameter according to the history information of the tool, the product information of the batch, and the target value of each placement location; and performing a deposition process according to the placement location of the wafers of the batch and the process parameter.

Abstract: A semiconductor manufacturing apparatus according to an embodiment includes a chamber that is capable of accommodating therein a plurality of semiconductor substrates. A gas supply part supplies process gas to the chamber. A top exhaust port is connected to a top portion of the chamber and exhausts gas within the chamber. A bottom exhaust port is connected to a bottom portion of the chamber and exhausts gas within the chamber. A controller controls a timing of supplying process gas from the gas supply part and a timing of switching between exhaust from the top exhaust port and exhaust from the bottom exhaust port.

Abstract: A raw material gas supply apparatus is configured to obtain a difference between a set value and a measured value of a vaporized raw material, add the difference as a correction value to the set value of the flow rate of the carrier gas to maintain an amount of the vaporized raw material at the set value, and subtract a difference from a set value of a flow rate of the dilution gas to maintain a total flow rate of the carrier gas and the dilution gas at a constant level. The amount of the vaporized raw material is calculated by subtracting an integration value of a measured value of the flow rate of the inert gas in the supply period of the raw material gas from an integration value of the flow rate of the raw material gas which is measured in the supply period.

Abstract: A method of manufacturing a nanowire includes: forming a silicon oxide layer by performing deposition of a silicon oxide on a substrate; forming a metal layer by performing deposition of a metal on the silicon oxide layer; forming a metal agglomerate by performing heat treatment on the substrate where the metal layer is formed; and growing a nanowire in an area where the metal agglomerate is formed by performing plasma treatment on the substrate where the metal agglomerate is formed.

Abstract: A method for forming a metal oxide film, the method including: forming a source solution containing metal into a mist, heating a substrate, supplying the source solution formed into a mist onto a first main surface of the substrate through a first supply path, and supplying hydrogen peroxide through a second path different from the first supply path onto the first main surface of the substrate, where the method further includes, in the following order, preliminarily preparing data showing a relationship among a molar ratio of an amount of the hydrogen peroxide to an amount of the zinc in the source solution, a carrier concentration of the metal oxide film, and a mobility of the metal oxide film, determining an amount of the hydrogen peroxide supplied with the data, and supplying the determined amount of the hydrogen peroxide through the second path onto the first main surface of the substrate.

Abstract: A method of depositing at least one metal skin layer on a metal nanoparticle core is disclosed. The first step of the method is selecting a metal to deposit. Then, the metal nanoparticle core is dispersed in an electrolyte solvent to form a liquid mixture. Next, a hydrogen containing gas is bubbled through the liquid mixture to form a layer of adsorbed hydrogen atoms on the surface of the metal nanoparticle core. Finally, the selected metal is added to the liquid mixture to form a metal skin layer on the metal nanoparticle core.

Abstract: This invention relates to an object with electroless plated coatings that includes an adhesion coating, a smoothening coating, a silver coating and an anti-scratch coating. A method of fabricating the electroless plated object is also described.

Abstract: A gas dynamic cold spray gun comprises a gun housing, a permeable body arranged inside the gun housing having a carrier gas inlet at a first end and a carrier gas outlet at a second end, an induction coil surrounding the permeable body and connected to a power supply, a nozzle affixed to the carrier gas outlet of the permeable body, and an orifice located downstream of the nozzle connected to a powder feeder.

Abstract: There is provided an etching solution of a semiconductor substrate that includes a first layer containing germanium (Ge) and a second layer containing a specific metal element other than germanium (Ge), the etching solution selectively removing the second layer and including an organic alkali compound.

Abstract: The iron and steel industry has a history of environmental consciousness, and efforts are continually made to reduce energy consumption and CO2 emissions. However, the carbothermic process has approached limits on the further reduction of greenhouse gas emissions, and only marginal improvements can be expected. Low temperature electrolysis using a dispersion medium to efficiently distribute charge throughout a colloid mixture including iron oxide provides an environmentally friendly method for performing an electrochemical reduction of Fe2O3 to produce granular Fe. An electrical-ionic conductive colloidal electrode containing the electrochemically active species (Fe2O3 particles), the liquid electrolyte (NaOH solution), and a percolating electrical conductor (carbon network) is utilized to produce Fe.