Abstract: A sintered alloy has an overall composition consisting of, by mass %, 13.05 to 29.62% of Cr, 6.09 to 23.70% of Ni, 0.44 to 2.96% of Si, 0.2 to 1.0% of P, 0.6 to 3.0% of C, and the balance of Fe and inevitable impurities; a metallic structure in which carbides are precipitated and uniformly dispersed in an iron alloy matrix having dispersed pores; and a density of 6.8 to 7.4 Mg/m3. The carbides include specific carbides having maximum diameter of 1 to 10 ?m and area ratio of 90% or more with respect to the total carbides.

Abstract: Metal ingots for forming single-crystal shape-memory alloys (SMAs) may be fabricated with high reliability and control by alloying thin layers of material together. In this improved method, a reactive layer (e.g., aluminum) is provided in thin flat layers between layers of other materials (e.g., copper and layers of nickel). When the stacked layers are vacuum heated in a crucible to the melting temperature of the reactive layer, it becomes reactive and chemically bonds to the other layers, and may form eutectics that, as the temperature is further increased, melt homogeneously and congruently at temperatures below the melting temperatures of copper and nickel. Oxidation and evaporation are greatly reduced compared to other methods of alloying, and loss of material from turbulence is minimized.

Abstract: A method of manufacturing a high strength galvanized steel sheet has a first heating step including heating to 400° C. to 750° C. in an atmosphere containing O2: 0.1 to 20 percent and H2O: 1 to 50 percent and heating to 600° C. to 850° C. in an atmosphere containing O2: 0.01 to less than 0.1 percent and H2O: 1 to 20 percent is applied to a steel sheet, a second heating step includes holding the steel sheet in an atmosphere containing H2: 1 to 50 percent and having a dew point of 0° C. or lower at 750° C. to 900° C. for 15 to 600 s, cooling to a temperature of 450° C. to 550° C., and holding is performed at that temperature for 10 to 200 s, and a galvanization treatment is applied.

Abstract: A high strength cold-rolled steel sheet and a high strength plated steel sheet which have an excellent surface appearance required for outer panels of automobiles and which have an extremely high r value in a direction at 45° with respect to the rolling direction and which have excellent press formability and a tensile strength of at least 340 MPa and a process for their manufacture are provided. The steel sheets have a chemical composition consisting essentially of, in mass %, C: 0.0005-0.025%, Si: at most 0.2%, Mn: 0.3-2.5%, P: at most 0.15%, S: at most 0.02%, N: at most 0.006%, sol. Al: less than 0.005%, Ti: 0.005-0.05%, and Nb: 0.020-0.200% with the mass ratio (Nb/Ti) of the contents of Nb and Ti being at least 2, and a remainder of Fe and impurities, and they have an r value in a direction at 45° with respect to the rolling direction (r45) of at least 1.80 and/or a mean r value (rm) of at least 1.60, and a tensile strength of at least 340 MPa.

Abstract: The present invention relates to an installation for the hot-dip coating of a metal strip (11) with a liquid metal, comprising a pot (4) containing a bath of liquid metal, an immersed sink roll (1) for deflecting the strip entering the bath to a vertical exit path and at least one additional roll (2, 3) for controlling the strip flatness, the axes of said sink and additional rolls (1, 2, 3) being supported by arms (16) connected to a main metal frame (8, 8A) itself connected to a base on each side of the pot by means of supports (9, 10), characterized in that the metal frame is a double beam made of a removable beam (8A) connected to an intermediate beam (13) itself anchored to the base by the supports (9, 10).

Abstract: Disclosed is a thermal spray powder of granulated and sintered cermet particles, which contains tungsten carbide or chromium carbide, and a silicon-containing iron-based alloy. The content of the alloy in the thermal spray powder is preferably 5 to 40% by mass. In this case, the alloy contains silicon in a content of 0.1 to 10% by mass.

Abstract: Provided is a multilayer hard film capable of elongating a lifetime of a member. A multilayer hard film (1) is formed by alternately stacking a layer A (11) made of Ti1-xSix(BpCqNr) [where 0.05?x?0.4, p?0, q?0, r>0, p+q+r=1], and a layer B (12) made of at least one selected from the group of Ti1-a-g-bBaCgNb [where 0.05?a?0.5, 0.25?b?0.6, 0?g?0.5], Si1-c-dCcNd [where 0.2?c?0.5, 0.25?d?0.5], B1-e-fCeNf [where 0.03?e?0.25, 0.3?f?0.55], TiB2, SiC and B4C, one another over the surface of the substrate (2).

Abstract: The present invention provides a vacuum evaporation apparatus. The apparatus comprises a vacuum chamber; an evaporation source disposed in the interior of the vacuum chamber, and having an inner heat unit and an outer heat unit located outside; a material container formed at an inner wall of the inner heat unit; a vacuum intermediate layer formed between an outer wall of the inner heat unit and the inner wall of the outer heat unit; a first branch at the inner heat unit for allowing a vapor to pass through; and a second branch at the outer heat unit for allowing the vapor to pass through. The device can overcome the influence of the color purity of light by gap forming by the deformation at the middle of the mask by the gravity, and increase the heating uniformity of the evaporation material and the stability of the evaporation rate.

Abstract: A conveyance system 50A of a film-forming apparatus 20A includes a blowing roller 6 having a function of supplying a cooling gas toward a substrate 21. The blowing roller has the first shell 11 and the internal block 12. The first shell 11 has a plurality of first through holes 13 as a gas supply channel, and is rotatable in synchronization with the substrate 21. The internal block 12 is disposed inside the first shell 11. A manifold 14 is defined by the internal block 12 inside the first shell 11. The manifold 14 is formed so as to introduce the gas toward the plurality of first through holes 13 within the range of a holding angle. A clearance 15 facing the plurality of first through holes 13 outside the range of the holding angle is further formed inside the first shell 11. In the radial direction, the manifold 14 has a relatively large dimension, and the clearance 15 has a relatively small dimension.

Abstract: Apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate includes a substrate support that may include a dielectric member having a surface to support a substrate thereon; one or more first conductive members disposed below the dielectric member and having a dielectric member facing surface adjacent to the dielectric member; and a second conductive member disposed about and contacting the one or more first conductive members such that RF energy provided to the substrate by an RF source returns to the RF source by traveling radially outward from the substrate support along the dielectric member facing surface of the one or more first conductive members and along a first surface of the second conductive member disposed substantially parallel to a peripheral edge surface of the one or more first conductive members after travelling along the dielectric layer facing surface.

Abstract: The present invention discloses a tablet for ion plating, which is capable of providing high speed film formation of a transparent conductive film suitable for a solar cell, and continuing film formation without generating crack, fracture or splash; and an oxide sintered body for obtaining the same. The oxide sintered body etc. comprising indium oxide as a main component, and tungsten as an additive element, content of tungsten being 0.001 to 0.15, as an atomic ratio of W/(In+W), characterized in that said oxide sintered body is mainly composed of a crystal grain (A) composed of the indium oxide phase with a bixbyite type structure, where tungsten does not make a solid solution, and a crystal grain (B) composed of the indium oxide phase with a bixbyite type structure, where tungsten does not make a solid solution, and has a density of 3.4 to 5.5 g/cm3.

Abstract: A sputtering device includes: a sputtering target; a substrate supporter facing the sputtering target and upon which a substrate is disposed; an anode mask between the sputtering target and the substrate which is on the substrate supporter; and a gas distribution member between the anode mask and the sputtering target, and including a plurality of gas distribution tubes separated from each other. Each gas distribution tube includes a plurality of discharge holes defined therein and through which gas is discharged to a vacuum chamber configured to receive the sputtering device.

Abstract: A formed article includes a gas barrier layer that is formed of a material that includes at least an oxygen atom, a carbon atom, and a silicon atom, the gas barrier layer having an oxygen atom content that gradually decreases from the surface of the gas barrier layer in the depth direction, and having a carbon atom content that gradually increases from the surface of the gas barrier layer in the depth direction. An electronic device member includes the formed article, and an electronic device includes the electronic device member. The formed article exhibits an excellent gas barrier capability and excellent transparency.

Abstract: The time-averaged ion beam profile of an ion beam for implanting ions on a work piece may be smoothed to reduce noise, spikes, peaks, and the like and to improve dosage uniformity. Auxiliary magnetic field devices, such as electromagnets, may be located along an ion beam path and may be driven by periodic signals to generate a fluctuating magnetic field to smooth the ion beam profile (i.e., beam current density profile). The auxiliary magnetic field devices may be positioned outside the width and height of the ion beam, and may generate a non-uniform fluctuating magnetic field that may be strongest near the center of the ion beam where the highest concentration of ions may be positioned. The fluctuating magnetic field may cause the beam profile shape to change continuously, thereby averaging out noise over time.

Abstract: Low scatter water clear zinc sulfide with reduced metal contamination is prepared by coating a chuck which holds zinc sulfide and machining the zinc sulfide with uncoated particles. An inert foil is cleaned with an acid cleaning method and also cleaning the zinc sulfide. The zinc sulfide is wrapped in the inert foil and then treated by a HIP process to provide a low scatter water-clear zinc sulfide. The low scatter water-clear zinc sulfide may be used in articles such as windows and domes.

Abstract: There is provided a cleaning method including cleaning an interior of a process chamber in which a substrate is processed, by supplying a cleaning gas into the process chamber and exhausting the cleaning gas from the process chamber via an exhaust pipe; and cooling the exhaust pipe by maintaining a state where distribution of the cleaning gas into the exhaust pipe is substantially stopped. Also, the act of cleaning the interior of the process chamber and the act of cooling the exhaust pipe are repeated alternately.

Abstract: Provided is a semiconductor device manufacturing method including: (a) supplying a source gas containing a first element and chlorine to a substrate accommodated in a processing chamber to form an adsorption layer of the source gas on the substrate; (b) supplying a chlorine-containing gas having a composition different from that of the source gas to the substrate while supplying the sources gas before an adsorption of the source gas to the substrate is saturated to suppress the adsorption of the source gas to the substrate; (c) removing the source gas and the chlorine-containing gas remaining on the substrate; (d) supplying a modifying gas including a second element to the substrate to form a layer including the first element and the second element on the substrate by modifying the adsorption layer of the source gas; and (e) removing the modifying gas remaining on the substrate.

Abstract: A reaction chamber including an upper region for processing a substrate, a lower region for loading a substrate, a susceptor movable within the reaction chamber, a first sealing member positioned on a perimeter of the susceptor, a second sealing member positioned between the upper region and the lower region, wherein the first and second sealing members are selectively engaged with one another to limit communication between the upper region and the lower region.

Abstract: A reaction device for chemical vapor deposition is disclosed. The reaction device includes a chamber, a susceptor, an inlet pipe unit and an outlet pipe. The susceptor is disposed within the chamber. The inlet pipe unit includes a plurality of feeding openings horizontally facing the peripheral area of the susceptor to input at least one reaction gas into the chamber. The at least one reaction gas is guided to move from the peripheral area of the susceptor and along a surface of the susceptor to reach the center of the susceptor. The outlet pipe includes a discharge opening whose position is corresponding to the center of the susceptor so as to discharge the reaction gas flowing to the center of the susceptor out of the chamber.

Abstract: Embodiments of the invention provide a mask for use in a deposition process. In one embodiment, the mask comprises a rectangular frame member having two opposing major sides and two opposing minor sides, each of the major and minor sides comprising a first side, a second side opposing the first side and joined to the first side by a first outer sidewall, a second outer sidewall disposed inward of the first outer sidewall and defining a raised region projecting from a plane of the second side, and an interior sidewall joining the raised region and the first side. The mask also comprises a rectangular strip disposed on a surface of the raised region, the rectangular strip comprising a first end, and a second end coupled to the first end and extending into an interior area of the frame member.

Abstract: A method of reducing surface roughness of a resist feature disposed on a substrate includes generating a plasma having a plasma sheath and ions therein. A shape of the boundary between the plasma and plasma sheath is modified using a plasma sheath modifier, so that a portion of the boundary facing the substrate is not parallel to a plane defined by the substrate. During a first exposure, the resist feature is exposed to electromagnetic radiation having a desired wavelength and the ions are accelerated across the boundary having the modified shape toward the resist features over an angular range.

Abstract: Apparatus and method for monitoring a vapor deposition installation in which a gas mixture can undergo gas phase nucleation (GPN) and/or chemically attack the product device, under process conditions supportive of such behavior. The apparatus includes a radiation source arranged to transmit source radiation through a sample of the gas mixture, and a thermopile detector assembly arranged to receive output radiation resulting from interaction of the source radiation with the gas mixture sample, and to responsively generate an output indicative of onset of the gas phase nucleation and/or chemical attack when such onset occurs. Such monitoring apparatus and methodology is useful in tungsten CVD processing to achieve high rate tungsten film growth without GPN or chemical attack.

Abstract: There is provided a substrate processing apparatus configured to process a substrate in a processing space by supplying a gas into the processing space through a shower head as a gas dispersion mechanism, including: a gas supply pipe connected to the shower head; a gas exhaust pipe connected to the shower head; and a cleaning gas supply system connected to the gas supply pipe and the gas exhaust pipe and configured to supply a cleaning gas into the shower head from both of the gas supply pipe and the gas exhaust pipe.

Abstract: Semiconductor fabrication processes are described. An embodiment of the semiconductor fabrication process includes providing a layer formed by decomposition of dimethylsilane through chemical vapor deposition, the layer being applied by a fluid material, and then positioning the layer in a system for producing a semiconductor product. Additionally or alternatively, the semiconductor product is produced and/or the layer is on a substrate.

Abstract: A system for improving efficiency in which water or aqueous solution is broken into its core molecules of hydrogen and oxygen using a 12 volt power source, and of which this gas vapor can improve the efficiency of an engine of a vehicle in a catalytic fashion once combining with a fossil fuel, and includes a reactor housing containing at least one reactor unit having electrodes slotted in an insulated container, a solution supply system that regulates the aqueous solution in the system; and an air handling system that regulates the decomposed hydrogen and oxygen gas in the system. The reactor unit being immersed in an liquid or aqueous solution produces hydrogen and oxygen through electrolysis.

Abstract: This invention relates to a device for the electrolytic production of hydrogen which can operate discontinuously or associated to strong power fluctuations and provide dry pressurized directly hydrogen, with high purity. The device for the electrolytic production of hydrogen from an alkaline aqueous solution, starting from dry cathode, comprises two half-cell, anodic and cathodic, separated by an anionic exchange membrane whose surface in contact with the cathodic half-cell is a membrane-electrode assembly (MEA), and the alkaline solution is present only in the anodic half-cell.

Abstract: Exemplary electrolytic methods are disclosed relating to preparation of useful products, e.g., disinfectants, from aqueous solutions of electrolytes. Disinfectant production with a capacity of a single electrolyzer may amount to 1200 liters per hour and up to 600 grams of active chlorine per hour by utilizing 3-7 gram sodium chloride (NaCl) for the production of 1 gram of active chlorine on the basis of a reliable and safe hydraulic structure. A fresh water supply may initially be directed into an internal tubular cathode chamber for cathode cooling purposes, before the participation in final disinfectant production process. A coolable cathode may increase the hold-up time of the electrolyte in the electrode chamber without application of circulation circuits, improving significantly the efficiency of sodium chloride utilization. The simplicity of the method makes it possible to increase both the productivity of a single electrolyzer and the efficiency of the process.

Abstract: The present invention relates to a process for the electrochemical fluorination of an organic compound, wherein a reaction solution comprising the organic compound and a fluorinating agent is subjected to electric current in an electrochemical fluorination cell.

Abstract: A hydrogen generation system includes a signal generation system configured to generate a driver signal. A signal processing system is configured to process the driver signal and generate a chamber excitation signal. A hydrogen generation chamber is configured to receive the chamber excitation signal and generate hydrogen from a feedstock contained within the hydrogen generation chamber. The signal processing system includes a negative reactive circuit coupled to a cathode of the hydrogen generation chamber.

Abstract: A hydrogen generation system includes a signal generation system configured to generate a driver signal. A signal processing system is configured to process the driver signal and generate a chamber excitation signal. A hydrogen generation chamber is configured to receive the chamber excitation signal and generate hydrogen from a feedstock contained within the hydrogen generation chamber. The signal processing system includes a positive reactive circuit coupled to an anode of the hydrogen generation chamber.

Abstract: Broadly, the present disclosure relates to sidewall features (e.g. inner sidewall or hot face) of an electrolysis cell, which protect the sidewall from the electrolytic bath while the cell is in operation (e.g. producing metal in the electrolytic cell).

Abstract: An electrolytic bath for electrodeposition includes nickel salt, phosphoric acid, phosphonic acid, and boric acid in solution. A method for producing an electrolytic bath includes the steps of mixing a nickel salt, phosphoric acid, phosphonic acid, and boric acid, and adding nickel carbonate in order to increase the pH value.

Abstract: A bipolar electrode fabricated with a combination of materials that will physically separate the catholyte from the metal anode of the electrode while providing high electrical conductivity between the metal anode and the catalyst cathode. This is accomplished by layering the catalyst cathode over a composite of conductive adhesive and conductive foil that is then affixed to the metal anode.

Abstract: A plating method includes holding a substrate with a substrate holder while bringing a sealing member into pressure contact with a peripheral portion of the substrate to form an enclosed internal space in the substrate holder; performing a first-stage leakage test of the substrate holder by producing a vacuum in the internal space and checking whether pressure in the internal space reaches a predetermined vacuum pressure within a certain period of time; and if the substrate holder has passed the first-stage leakage test, performing a second-stage leakage test of the substrate holder by closing off the internal space after producing the vacuum therein and checking whether a change in the pressure in the internal space reaches a predetermined value within a certain period of time.

Abstract: A negative electrophoretic photoresist is applied over a plurality of protruding disposable template portions on a substrate. A silo structure is placed on planar portions of the negative electrophoretic photoresist that laterally surround the plurality of protruding disposable template portions. The negative electrophoretic photoresist is lithographically exposed employing the silo structure and a first lithographic mask, which includes a transparent substrate with isolated opaque patterns thereupon. After removal of the silo structure, the negative electrophoretic photoresist is lithographically exposed employing a second lithographic mask, which includes a pattern of transparent areas overlying the planar portions of the negative electrophoretic photoresist less the areas for bases of metal structure to be subsequently formed by electroplating. The negative electrophoretic photoresist is developed to form cavities therein, and metal structures are formed by electroplating within the cavities.

Abstract: Apparatus and methods for electroplating are described. Apparatus described herein include anode supports including positioning mechanisms that maintain a consistent distance between the surface of the wafer and the surface of a consumable anode during plating. Greater uniformity control is achieved.

Abstract: In some embodiments, the present invention provides novel methods of preparing porous silicon films and particles for lithium ion batteries. In some embodiments, such methods generally include: (1) etching a silicon material by exposure of the silicon material to a constant current density in a solution to produce a porous silicon film over a substrate; and (2) separating the porous silicon film from the substrate by gradually increasing the electric current density in sequential increments. In some embodiments, the methods of the present invention may also include a step of associating the porous silicon film with a binding material. In some embodiments, the methods of the present invention may also include a step of splitting the porous silicon film to form porous silicon particles. Additional embodiments of the present invention pertain to anode materials derived from the porous silicon films and porous silicon particles.

Abstract: Systems and methods for separating components of a multilayer stack of electronic components are disclosed herein. The multilayer stack of electronic components may include an internal photovoltaic cell and includes a substrate, a sacrificial anode portion, a cathode portion, and an electronic assembly. The sacrificial anode portion extends between the electronic assembly and the substrate and also extends between the electronic assembly and the internal photovoltaic cell, when present. The internal photovoltaic cell, when present, extends between the sacrificial anode portion and the cathode portion.

Abstract: A metalloid such as silicon in the form of a preheated solid electrode is purified by a CEVAR purification process by producing an ingot with controlled heating and cool down after the preheated electrode is melted in a CEVAR furnace system using a short CEVAR open-bottomed crucible.

Abstract: The diameter of a single crystal is controlled to a set point diameter during pulling of the single crystal from a melt contained in a crucible and which forms a meniscus at a phase boundary on the edge of the single crystal, the meniscus having a height which corresponds to the distance between the phase boundary and a level of the surface of the melt outside the meniscus, comprising repeatedly: determining the diameter of a bright ring on the meniscus; calculating a diameter of the single crystal while taking into account the diameter of the bright ring and the dependency of the diameter of the bright ring on the height of the meniscus and on the diameter of the single crystal itself; and calculating at least one manipulated variable for controlling the diameter of the single crystal on the basis of the difference between the calculated diameter of the single crystal and the set point diameter of the single crystal.

Abstract: A technology for growing silicon carbide single crystals by PVT (Physical Vapor Transport) and a technology for in-situ annealing the crystals after growth is finished is provided. The technology can achieve real-time dynamic control of the temperature distribution of growth chamber by regulating the position of the insulation layer on the upper part of the graphite crucible, thus controlling the temperature distribution of growth chamber in real-time during the growth process according to the needs of the technology, which helps to significantly improve the crystal quality and production yield.

Abstract: A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an a-axis direction comprising a 0.15° or greater miscut angle towards the a-axis direction and a less than 30° miscut angle towards the a-axis direction.

Abstract: A method of producing an epitaxial wafer, comprising: performing epitaxial growth of silicon on a main surface of a wafer made of a silicon single crystal; performing surface flattening pretreatment of a main surface of the wafer using a treatment liquid of a predetermined composition at a temperature of 100° C. or less, thereby forming an oxide film of a predetermined thickness while removing particles adhered on the main surface of the wafer; and performing a surface polishing step where the main surface of the wafer is mirror polished.

Abstract: Polysilicon rods from the Siemens process are crushed into fragments and further processed to fragments having very low metal contamination in an economical manner by purposefully fabricating parts contacting the polysilicon from materials which cause high metal contamination, and removing the metal contamination by a cleaning bath or baths tailored to the particular metal contamination. By this process, economical materials previously scrupulously avoided, such as low alloy steel, can be used for crushers, conveyors, and other polysilicon-contacting parts of the crushing and classifying system.

Abstract: The present invention provides a magnetoelectric material in which an electric property is capable of being controlled by a magnetic field or a magnetic property is capable of being controlled by an electric field, and a method of manufacturing the same. Particularly, the present invention provides a magnetoelectric material in which a distance between magnetic ions interacting with each other is controlled by using non-magnetic ions or alkaline earth metal ions, and a method of manufacturing the same.

Abstract: A process for making a filament for use in a brush implement comprises providing a composite filament comprising an external material and at least one internal material, wherein the tip surface comprises the internal material surrounded by the external material, the internal material having longitudinal shrinkage characteristics that differ from those of the external material; and causing the internal material to shrink inside the external material, whereby the internal material comprising the tip surface sinks relative to the external material comprising the tip surface so that at least one crater is formed at the tip surface of the filament, the at least one crater comprising a bottom formed by the internal material and walls formed by the external material, the at least one crater having a surface edge of a predetermined size and a predetermined shape.

Abstract: The present invention provides a method of making a carbon nanotubes fiber by providing a polyethylene terephthalate substrate; contacting the polyethylene terephthalate substrate with a polyvinyl alcohol polymer solution to form a polyvinyl alcohol polymer layer on the polyethylene terephthalate substrate; contacting the polyvinyl alcohol polymer layer with a carbon nanotube solution, wherein the carbon nanotubes solution comprises one or more carbon nanotubes; forming a nanotube layer on the polyvinyl alcohol polymer layer; delaminating the polyvinyl alcohol polymer layer from the polyethylene terephthalate substrate to release a composite fiber layer; stretching the composite fiber layer; and drying the composite fiber layer.

Abstract: The invention is directed to carbon fibers having high tensile strength and modulus of elasticity. The invention also provides a method and apparatus for making the carbon fibers. The method comprises advancing a precursor fiber through an oxidation oven wherein the fiber is subjected to controlled stretching in an oxidizing atmosphere in which tension loads are distributed amongst a plurality of passes through the oxidation oven, which permits higher cumulative stretches to be achieved. The method also includes subjecting the fiber to controlled stretching in two or more of the passes that is sufficient to cause the fiber to undergo one or more transitions in each of the two or more passes. The invention is also directed to an oxidation oven having a plurality of cooperating drive rolls in series that can be driven independently of each other so that the amount of stretch applied to the oven in each of the plurality of passes can be independently controlled.

Abstract: A method for preparing high-grade and casual fabric with special leather feel using a corn-based fiber that comprises the steps of: 1) selecting 0.3-0.5 D/PF ultrafine corn-based polymeric fiber, i.e., DuPont™ SORONA®, and 0.2-0.4 D/PF long porous bright polyester yarns as raw materials; 2) compositing by air-jet texturing: having the above raw materials composited by low tension air-jet texturing in an air texturing machine, with the tension force controlled in the range of 4.5-6.0 cN, so as to form ATY yarns with a denier number of 120-180 D; 3) weaving, which includes yarn sizing, preliminary drying, oil applying and plain weaving; 4) dyeing and finishing, which include treating a fabric by pre-treating, presetting, splitting and alkali detaching, water washing and dehydrating, dyeing, water repellent treatment, instant ultrahigh temperature treatment, and one-sided lustering.

Abstract: The invention relates to a yarn containing siliconized micro-denier polyester fibers and macro-denier fibers. The blending ratio of the siliconized micro-denier polyester fibers and macro-denier fibers in the yarn ranges between about 10 to about 90 and about 90 to about 10 percent by weight. The macro-denier fiber of the yarn is selected from the group consisting of a synthetic fiber, a natural fiber, and a combination of synthetic and natural fibers. The invention also relates to a woven or knitted fabric and articles of clothing containing the yarn of the invention, either alone or in combination with other yarns.