Abstract: The present invention relates to an aluminum base alloy with high thermal conductivity, and more particularly, to an alloy for die casting that does not become brittle and has high thermal conductivity, so as to be easily used for LED lighting parts, and contains 0.2 to 2.0 wt % of Mg, 0.1 to 0.3 wt % of Fe, 0.1 to 1.0 wt % of Co, with the remainder being Al.

Abstract: Magnesium alloys which possess good processability and/or ductility while retaining good resistance to corrosion and/or degradation comprising Y: 0-10% by weight, Nd: 0-5% by weight, wherein the total of Y+Nd is at least 0.05% by weight, one or more heavy rare earths selected from Ho, Lu, Tm and Tb in a total amount of above 0.5% and no more than 5.5% by weight, Gd: 0-3.0% by weight, and Sm: 0-0.2% by weight. The alloy optionally includes one or more of: Dy: 0-8% by weight; Zr: 0-1.2% by weight; Al: 0-7.5% by weight; Zn and/or Mn: 0-2% by weight in total; Sc: 0-15% by weight; In: 0-15% by weight; Ca: 0-3% by weight; Er up to 5.5% by weight, provided that the total of Er, Ho, Lu, Tm and Tb is no more than 5.5% by weight; and one or more rare earths and heavy rare earths other than Y, Nd, Ho, Lu, Tm, Tb, Dy, Gd and Er in a total amount of up to 0.5% by weight; the balance being magnesium and incidental impurities up to a total of 0.3% by weight.

Abstract: A high-strength magnesium alloy member is suitable for products in which at least one of bending stress and twisting stress primarily acts. The member has required elongation and 0.2% proof stress, whereby strength and formability are superior, and has higher strength and large compressive residual stress in the vicinity of the surface of a wire rod. In the magnesium alloy member formed as a wire rod in which at least one of bending stress and twisting stress primarily acts, the wire rod includes a surface portion having the highest hardness of 170 HV or more in the vicinity of the surface and an inner portion having a 0.2% proof stress of 550 MPa or more and an elongation of 5% or more, and the wire rod has the highest compressive residue stress in the vicinity of the surface of 50 MPa or more.

Abstract: Disclosed is a high elasticity aluminum alloy including a titanium compound. In particular, the high elasticity aluminum alloy includes Ti and B and the composition ratio of Ti and B is from about 3.5 to about 6:1. In addition, B is included in an amount of about 0.5 to 2 wt % in the high elasticity aluminum alloy, and both of Al3Ti and TiB2 phases are included therein as a reinforcement phase. Methods for producing the high elasticity aluminum alloy are also disclosed.

Abstract: A surface-treated component manufacturing method and apparatus capable of detecting an end of a steel bar. Quenching (surface treatment) is locally applied to a plurality of steel bars aligned end-to-end in an axial direction while moving the steel bars in the axial direction. Quenched portions are locally formed on each of the steel bars through a moving step, a detecting step, and a quenching step. In the detecting step, an end portion of one steel bar is displaced relative to an end portion of another steel bar with a pressure roller device, and passage of the end of the one or another steel bar is detected with a detection sensor. In the quenching step, the quenched portions are locally formed on each of the steel bars with a quenching device at a quenching timing determined on the basis of the result of detection by the detection sensor.

Abstract: A method for manufacturing a high-performance NdFeB rare earth permanent magnetic device which is made of an R—Fe—Co—B-M strip casting alloy, a micro-crystal HR—Fe alloy fiber, and TmGn compound micro-powder, includes steps of: manufacturing the R—Fe—Co—B-M strip casting alloy, manufacturing the micro-crystal HR—Fe alloy fiber, providing hydrogen decrepitating, pre-mixing, powdering with jet milling, post-mixing, providing magnetic field pressing, sintering and ageing, wherein after a sintered NdFeB permanent magnet is manufactured, machining and surface-treating the sintered NdFeB permanent magnet for forming a rare earth permanent device.

Abstract: A cold rolled steel sheet according to the present invention satisfies an expression of (5×[Si]+[Mn])/[C]>11 when [C] represents an amount of C by mass %, [Si] represents an amount of Si by mass %, and [Mn] represents an amount of Mn by mass %, a metallographic structure before hot stamping includes 40% to 90% of a ferrite and 10% to 60% of a martensite in an area fraction, a total of an area fraction of the ferrite and an area fraction of the martensite is 60% or more, a hardness of the martensite measured with a nanoindenter satisfies an H2/H1<1.10 and ?HM<20 before the hot stamping, and TS×? which is a product of a tensile strength TS and a hole expansion ratio ? is 50000 MPa·% or more.

Abstract: Disclosed are a hot stamping part with enhanced toughness and a method for manufacturing the same, in which the hot stamping part has a tensile strength (TS) of 700-1,200 MPa after hot stamping while guaranteeing elongation (EL) of 12% or more by adjusting alloy components and controlling process conditions.

Abstract: Provided is stainless steel foil that is suitably used for forming a catalyst carrier for an exhaust gas purifying facility, the catalyst carrier being installed in a vehicle that discharges exhaust gas having a temperature lower than the temperature of exhaust gas of a gasoline-powered automobile. The ferritic stainless steel foil contains, by mass %, C: 0.05% or less, Si: 2.0% or less, Mn: 1.0% or less, S: 0.005% or less, P: 0.05% or less, Cr: 11.0% to 25.0%, Ni: 0.05% to 0.30%, Al: 0.01% to 1.5%, Cu: 0.01% to 2.0%, N: 0.10% or less, and the balance being Fe and inevitable impurities.

Abstract: Ni-based Cr- and P-bearing alloys that can from centimeter-thick amorphous articles are provided. Within the family of alloys, millimeter-thick bulk-glassy articles can undergo macroscopic plastic bending under load without fracturing catastrophically.

Abstract: A method and device for partially masking a component or assembly during a coating process, the device including at least one masking plate for separating a region to be coated from a region to be masked, the masking plate having at least a portion of at least one opening which conforms closely to the contour of the component and is adapted to allow passage of the component therethrough is provided. In masked region, a gap is present along opening, at least one sealing element being disposed at the gap on the side of the masked region.

Abstract: A composition, method for depositing the composition on a downhole component, and a downhole tool. The composition includes about 0.25 wt % to about 1.25 wt % of carbon, about 1.0 wt % to about 3.5 wt % of manganese, about 0.1 wt % to about 1.4 wt % of silicon, about 1.0 wt % to about 3.0 wt % of nickel, about 0.0 to about 2.0 wt % of molybdenum, about 0.7 wt % to about 2.5 wt % of aluminum, about 1.0 wt % to about 2.7 wt % of vanadium, about 1.5 wt % to about 3.0 wt % of titanium, about 0.0 wt % to about 6.0 wt % of niobium, about 3.5 wt % to about 5.5 wt % of boron, about 0.0 wt % to about 10.0 wt % tungsten, and a balance of iron.

Abstract: A method for producing a ceramic layer on a surface formed from a Ni base alloy, includes the following steps: producing on the surface a ceramic layer containing ZrO2 as a main constituent; producing a gas phase having a temperature in the range from 400 to 900° C., in which a vapor formed from a salt melt with the components alkali chloride, alkali sulphate and ZnCl2 is contained in a carrier gas formed from an inert gas with an addition from 0.5 to 10% by weight HCl; and bringing the ceramic layer into contact with the gas phase for a period of time that is sufficient for an intermediate layer having a thickness of at least 0.1 ?m to form between the ceramic layer and the surface.

Abstract: A method of mitigating tin whisker formation on electronic assemblies includes exposing tin metal in the electronic assembly to a mitigating agent that interacts with the tin metal to produce a product that is resistant to forming tin whiskers.

Abstract: The present invention provides a blackening treatment method for a black Cr—Co alloy plating film, the method comprising bringing a black Cr—Co alloy plating film having a Cr content of 1 to 15 wt. % into contact with a blackening treatment solution comprising an aqueous solution with a pH value of ?1 to 5. According to the present invention, the blackish color of a less blackish plating film formed from a plating bath containing trivalent chromium is enhanced to further improve decorativeness. Furthermore, the corrosion resistance of the film can be more improved by performing electrolytic chromate treatment after blackening treatment.

Abstract: An article including a substrate and a plurality of coatings disposed on the substrate is presented. The plurality of coatings includes a thermal barrier coating disposed on the substrate; and a protective coating including a calcium-magnesium-aluminum-silicon-oxide (CMAS)-reactive material disposed on the thermal barrier coating. The CMAS-reactive material includes an NZP-type material. The CMAS-reactive material is present in the plurality of coatings in an effective amount to react with a CMAS composition at an operating temperature of the thermal barrier coating, thereby forming a reaction product having one or both of melting temperature and viscosity greater than that of the CMAS composition. A method of making the article and a related turbine engine component are also presented.

Abstract: A physical vapor deposition (PVD) apparatus having a deposition chamber and a source chamber of minimal volume, which can be selectively isolated from each other by a various load-lock valves. Exemplary embodiments can include a tapered high vacuum chamber disposed between the deposition chamber and the source chamber. The pump down time of the apparatus can be reduced, as compared to conventional PVD systems, due to the combined reduced volume of the chambers. Coating uniformity can also be improved by spinning each part to be coated on its' own axis while selectively exposing to a deposition source with minimal particle generation.

Abstract: A drum sputtering device that can uniformly deposit target atoms on all over particles is provided. The drum sputtering device includes a vacuum container 2 that contains particles, a tubular drum 10 that is arranged inside the vacuum container 2 and at least one end face 10c of which is open, and a sputtering target 16 that is arranged inside the drum 10. With a supporting arm 11, a drive motor 12 for rotation, a drive motor 13 for swing, a first gear member 14, and a second gear member 15, the drum can be rotated around the axis of the drum 10 and the drum 10 can be swung so that one end portion 10e and the other end portion 10f in the axial direction of the drum 10 are relatively vertically switched.

Abstract: Provided is an apparatus that includes a molding die for producing a sintered body. The molding die is configured for cold isostatic pressing and includes a knockdown mold frame comprised of plural frame members and a bottom plate provided in contact with the knockdown mold frame. An upper punch is provided to be movable along the inner surface of the knockdown mold frame. The frame members configured to be movable relative to each other to accommodate an expansion of a green body which takes place at the time of reducing the pressure after the completion of pressing.

Abstract: A process for manufacturing a transparent body for a touch screen panel is described. The process includes: depositing a first transparent layer stack over a flexible transparent substrate, wherein said first transparent layer stack includes at least a first dielectric film with a first refractive index, and a second dielectric film with a second refractive index different from the first refractive index; providing a transparent conductive film over the first transparent layer stack; depositing a layer of a conductive material over the transparent conductive film; providing a polymer layer over the layer of a conductive material; imprinting a pattern, e.g. a 3D pattern, on the polymer layer; etching the layer of the conductive material based upon the pattern to form conductive paths for the touch screen panel; and etching the transparent conductive film based upon the pattern to form a structured transparent conductive pattern for touch detection.

Abstract: Provided is a method of forming a silicon nitride film on a surface to be processed of a target object, which includes: repeating a first process a first predetermined number of times, the process including supplying a silicon source gas containing silicon toward the surface to be processed and supplying a decomposition accelerating gas containing a material for accelerating decomposition of the silicon source gas toward the surface to be processed; performing a second process of supplying a nitriding gas containing nitrogen toward the surface to be processed a second predetermine number of times; and performing one cycle a third predetermined number of times, the one cycle being a sequence including the repetition of the first process and the performance of the second process to form the silicon nitride film on the surface to be processed.

Abstract: Provided is a surface-coated cutting tool having both high wear resistance and high fracture resistance and having an indicator function that significantly facilitates the determination of the usage of a cutting edge. A surface-coated cutting tool according to an embodiment of the present invention includes a substrate and a coating formed on the substrate. The coating includes a plurality of layers. A surface layer of the plurality of layers is a titanium boride layer made of TixBy (where x and y are expressed as atomic percentages and satisfy 1.5<y/x<2.5) and has a compressive residual stress of 0.1 GPa or more in absolute value.

Abstract: A method of cleaning a thin film forming apparatus wherein a process for supplying a film forming gas into a reaction tube of the thin film forming apparatus to form a thin film on an object to be processed is repeated more than one time and then a cleaning gas is supplied into the reaction tube to remove extraneous particles attached to an interior of the apparatus, the method comprising: a first cleaning process including supplying a first cleaning gas into the reaction tube to remove the extraneous particles attached to the interior of the apparatus when a first cleaning start conditions is satisfied; and a second cleaning process including performing a cleaning process that is different from the first cleaning process when a second cleaning start condition that is different from the first cleaning start condition is satisfied.

Abstract: A semiconductor manufacturing apparatus according to an embodiment includes a chamber that is capable of accommodating therein a plurality of semiconductor substrates. A gas supply part supplies process gas to the chamber. A top exhaust port is connected to a top portion of the chamber and exhausts gas within the chamber. A bottom exhaust port is connected to a bottom portion of the chamber and exhausts gas within the chamber. A controller controls a timing of supplying process gas from the gas supply part and a timing of switching between exhaust from the top exhaust port and exhaust from the bottom exhaust port.

Abstract: A method for producing a lithium phosphorus oxynitride layer having high ionic conductivity is provided. The method for producing a lithium phosphorus oxynitride layer on a substrate by atomic layer deposition comprises an atmosphere interchanging step, wherein the atmosphere surrounding the substrate is alternately switched between a first atmosphere, containing a first precursor such as a dialkyl phosphoramidate and/or alkyl phosphorodiamidate, and a second atmosphere, containing a second precursor such as a lithium hexaalkyl disilazide.

Abstract: A semiconductor manufacturing apparatus according to an embodiment comprises a reaction chamber in which a semiconductor substrate is capable of being accommodated when a deposited film is to be formed on a surface of the semiconductor substrate. A first supplier supplies a source gas to a first area in the reaction chamber. A second supplier supplies an oxidation gas to a second area in the reaction chamber. A third supplier supplies a hydrogen gas to a third area between the first area and the second area in the reaction chamber. A stage moves the semiconductor substrate to any one of the first to third areas.

Abstract: A film deposition apparatus includes: a plasma generating section configured to generate plasma between a cathode target and an anode; a film deposition chamber in which a base material is placed; and a magnetic-field filter section configured to remove a particle from the plasma by a magnetic field and to transfer the plasma to the film deposition chamber. The magnetic-field filter section includes: a first housing area to which a first voltage is applied; and a second housing area, provided downstream of the first housing area in the moving direction of the plasma, to which a second voltage is applied.

Abstract: A composite structural component is disclosed. The composite structural component can include a lattice structure, a casing disposed about at least a portion of the lattice structure, and a skin adhered to a surface of the casing. The lattice structure and the casing can be formed of a polymeric material and the skin can be formed of a metallic material. A method of manufacturing a composite structural component is disclosed. The method can include creating a casing of a polymeric material and creating a lattice structure of a polymeric material disposed about at least a portion of the casing. The method can include sealing the porosity of the casing and lattice structure. The method can include adhering a skin of a metallic material to at least a portion of the casing. At least one of creating a lattice structure and creating a casing comprises utilizing an additive manufacturing process.

Abstract: A method for improving the adhesive capacity of a protectively coated steel sheet is proposed, in which, in a continuous process, a protective coating based on Zn—Al—Mg is applied to the steel sheet and, in a further step, the protective coating undergoes a surface treatment in which an aqueous composition is applied in order to modify the natural oxide layer, which contains Al2O3 and MgO, without pickling this natural oxide layer as a result. In order to significantly increase adhesive capacity of the protectively coated steel sheet, the invention proposes skin-pass rolling the protectively coated steel sheet and then reacting the natural oxide layer with an aqueous fluoride-containing composition, reducing its MgO content in order to thus modify the natural oxide layer.

Abstract: A method of preparing a substrate to receive a metal coating deposited by thermal spraying, the method including the following steps: a) depositing a layer of adhesive on the zone to be coated, the layer having a uniform thickness greater than 10 ?m and less than 100 ?m; b) before the adhesive dries, cold spraying a metal powder onto the zone to be coated, so that powder particles become embedded at least in part in the layer of adhesive; and c) drying the adhesive in which the powder particles remain held captive, thereby forming an undercoat suitable for receiving a metal coating deposited by thermal spraying. The method is applicable to protecting the leading edges of fan blades.

Abstract: A method is provided for metallization of substrates providing a high adhesion of the deposited metal to the substrate material and thereby forming a durable bond. The method applies novel adhesion promoting agents comprising nanometer-sized particles prior to metallization. The particles have at least one attachment group bearing a functional chemical group suitable for binding to the substrate.

Abstract: A build piece is made from a build plan by an additive metal deposition process, the build plan created from a three dimensional definition of a desired part, the build plan having a first set of dimensions corresponding to the desired part and includes a support structure. The build piece is to a chemical etchant such that the support structure is removed from the build piece and the dimensions of the build piece corresponding to the desired part are reduced to a second set of dimensions.

Abstract: The present invention relates to a process of oxidizing copper in a copper etching solution by using oxygen gas and/or air as an oxidizing agent, the process comprising the steps of: a) introducing the oxidizing agent into an acidic reduced copper etching solution comprising Cl? and Cu+, b) stirring the solution obtained in step a), and thereby allowing the reaction 2Cu++½O2 (aq)+2H+?2Cu2++H2O to occur, thereby producing an oxidized copper etching solution comprising less Cu+ than the reduced copper etching solution. An advantage of the present invention is that it provides an improved process at least in terms of the speed of the oxidation and the quality of the etching.

Abstract: The present invention refers to a procedure which includes the following objectives: a) To determine the morphology of the micro and nanocavities produced by chemical and/or microbiological corrosion in metallic materials, in the space of three dimensions as well as the effective advance of corrosion, the true length of corrosion cavities and their associated parameters: corrosion vectors, corrosion intensity and determination of the cavities diameter/true length of corrosion ratio, applying scanning electron microscopy (MEB) techniques, and analytic, gravimetric and volumetric formulations; b) To quantitatively determine the rate of chemical and/or microbiological corrosion in metallic materials, through their volumetric and gravimetric properties; and c) To obtain a graphic interface to access the numeric information and the micrographs in a simple and friendly manner.

Abstract: Provided is a method for surface-treatment of a metal using bacteria, and more particularly, a method for surface-treatment of a metal using bacteria including immersing the metal having a surface layer on which a deformed layer is formed in a culture fluid cultured with metal-oxidizing bacteria, such that the metal-oxidizing bacteria selectively oxidize and leach-remove the deformed layer of the metal to perform micro-machining, thereby minimizing a damage to a metal basic material to effectively remove the deformed layer of the metal, and further including partly coating a surface of the metal to produce fine patterns of which sizes and shapes are various.

Abstract: A method for high-temperature electrolysis of steam and another gas to be electrolyzed, chosen from carbon dioxide and nitrogen dioxide, implemented in an electrolysis reactor includes a stack of elementary electrolysis cells each made of a cathode, an anode and an electrolyte inserted between the cathode and the anode, and a plurality of electric and fluid interconnectors each arranged between two adjacent elementary cells with one of the surfaces thereof in electric contact with the anode of one of the two elementary cells and the other one of the surfaces thereof in electric contact with the cathode of the other one of the two elementary cells. The steam is supplied and distributed to the cathode of one of the two adjacent elementary cells and either carbon dioxide or nitrogen dioxide is supplied and distributed to the cathode of the other one of the two elementary cells.

Abstract: In exemplary implementations of this invention, a photoelectrode includes a semiconductor for photocarrier generation, and a catalyst layer for altering the reaction rate in an adjacent electrolyte. The catalyst layer covers part of the semiconductor. The thickness of the catalyst layer is less than 60% of its minority carrier diffusion distance. If the photoelectrode is a photoanode, it has an OEP that is more than the potential of the valance band edge but less than the potential of the Fermi level of the semiconductor. If it is a photocathode, it has an RHE potential that is less than the potential of the conduction band edge but more than the potential of the Fermi level of the semiconductor. The absolute value of difference (OEP minus potential of valence band edge, or RHE potential minus potential of conduction band edge) is greater than zero and less than or equal to 0.2V.

Abstract: The present invention provides a method for splitting water. In the present method, first, prepared is a water splitting device comprising: cathode and anode containers in which first and second electrolyte solutions are stored respectively; a proton exchange membrane disposed therebetween; a cathode electrode in contact with the first electrolyte solution and comprises a metal or metal compound; and an anode electrode in contact with the second electrolyte solution and comprises a nitride semiconductor layer. Then, the anode electrode is irradiated with light to split water contained in the first electrolyte solution. The anode electrode comprises a cobalt oxide layer formed of Co3O4 as a main component on a surface of the nitride semiconductor layer; the surface of the nitride semiconductor layer being in contact with the second electrolyte solution. The cathode electrode is electrically connected to the anode electrode without an external power supply.

Abstract: The invention relates to an electrochemical device intended for the production of products through electrochemical reaction of reactants, said electrochemical device comprising a stack of electrochemical cells (10), each cell (10) comprising a structure (16), two bipolar plates (18a, 18b) shared with adjacent cells (10), a membrane/electrode assembly (20) and two intermediate elements (21, 22) arranged to carry a current and the reactants/products to/from the membrane/electrode assembly (20).

Abstract: An ozonated water generating device includes a first housing, a second housing on the first housing, and a catalytic electrode disposed in a space in the first and second housings. The catalytic electrode includes an anode, a cation exchange membrane, and a cathode. The device includes a cushion at least one between the anode and the first housing and between the cathode and the second housing, and at least one pusher in at least one of the first housing and the second housing. The pusher penetrates the first or second housing to push the cushion toward the catalytic electrode, or to directly push the catalytic electrode. The pusher is positioned to ensure pushing on at least the center of the catalytic electrode. And the pressure of the pusher brings the anode, the cation exchange membrane, and the cathode into pressure contact with each other.

Abstract: Systems and methods for reducing the capital and operating costs of a smelting process system and improving the environmental impact of the smelting process using an IGT system to remove and filter environmentally hazardous gases and particulates from each electrolytic cell in the smelting process system.

Abstract: Modular cathode assemblies are useable in electrolytic reduction systems and include a basket through which fluid electrolyte may pass and exchange charge with a material to be reduced in the basket. The basket can be divided into upper and lower sections to provide entry for the material. Example embodiment cathode assemblies may have any shape to permit modular placement at any position in reduction systems. Modular cathode assemblies include a cathode plate in the basket, to which unique and opposite electrical power may be supplied. Example embodiment modular cathode assemblies may have standardized electrical connectors. Modular cathode assemblies may be supported by a top plate of an electrolytic reduction system. Electrolytic oxide reduction systems are operated by positioning modular cathode and anode assemblies at desired positions, placing a material in the basket, and charging the modular assemblies to reduce the metal oxide.

Abstract: A system, method, and apparatus for a co-bonded electroformed abrasion strip are disclosed. A disclosed method for making a unitary abrasion strip for a fluid dynamic surface includes manufacturing or identifying a first metallic section having an overlap region on a first end of the first metallic section. The method further includes manufacturing or identifying an overlap region disposed on the first end of the first metallic section by preparing the first end of the first metallic section. Also, the method includes creating a second metallic section onto the overlap region on the first end of the first metallic section by performing a first electro-deposition process on the first end of the first metallic section; where the first metallic section, the overlap region, and the second metallic section together form a unitary, inseparable abrasion strip for a fluid dynamic surface.

Abstract: This relates to a process for manufacturing a recovery annealed coated steel substrate for packaging applications and a packaging steel product produced thereby.

Abstract: This relates to a coated substrate for packaging applications and a method for producing the coated substrate.

Abstract: A graphene composite coating on a metal surface with excellent corrosion resistance by electrophoretic or electrolytic deposition has been obtained. The composite coating was shown to significantly increase the resistance of the metal surface to electrochemical degradation. The graphene coating significantly reduces cathodic current, which is an indicator of the rate of corrosion at the interface between the cathodic material and the anodic material.

Abstract: An electroplating system includes a processor has a vessel having a first or upper compartment and a second or lower compartment containing catholyte and anolyte, respectively, with an processor anionic membrane between them. An inert anode is located in the second compartment. A replenisher is connected to the vessel via catholyte return and supply lines and anolyte return and supply lines, to circulate catholyte and anolyte through compartments in the replenisher separated by a replenisher anionic membrane. The replenisher adds metal ions into the catholyte by moving ions from a bulk metal source, and moves anions from the anolyte through the anionic membrane and into the catholyte. Concentrations or metal ions and anions in the catholyte and the anolyte remain balanced.

Abstract: The production method of an SiC single crystal is a production method of an SiC single crystal by a solution growth process. The production method includes a contact step A, a contact step B, and a growth step. In the contact step A, a partial region of the principal surface is brought into contact with a stored Si—C solution. In the contact step B, a contact region between the principal surface and the stored Si—C solution expands, due to a wetting phenomenon, starting from an initial contact region which is the partial region brought into contact in the contact step A. In the growth step, an SiC single crystal is grown on the principal surface which is in contact with the stored Si—C solution.

Abstract: A silicon carbide powder according to the embodiment includes nitrogen having a concentration in a range of about 100 ppm to about 5000 ppm. A method for manufacturing silicon carbide powder according to the embodiment includes preparing a mixture by mixing a silicon source including silicon with a solid carbon source or a carbon source including an organic carbon compound; heating the mixture; cooling the mixture; and supplying a nitrogen-based gas into the mixture.

Abstract: An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize deposition on the chamber walls. Sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.