Abstract: A metal material including a plurality of metal particles arranged in a crystal structure having at least two phases; wherein the at least two phases include a crystalline phase and an amorphous phase, wherein the crystalline phase includes a nanocrystalline phase and the amorphous phase includes a nanoamorphous phase.

Abstract: The present disclosure relates to the field of display technology, particularly to a vacuum deposition apparatus and a vapor deposition method. The vacuum deposition apparatus includes a vacuum chamber and a rotary base, an evaporation source, and a plurality of vapor deposition zones arranged in series from bottom to top in the vacuum chamber, wherein the shape of the rotary base is a Reuleaux triangle, and the trajectories of movement of its vertices in the horizontal plane is a rounded square, the vapor deposition zones are arranged at intervals along the trajectories of movement of the vertices of the rotary base, the evaporation source is driven by the rotary base to pass below the vapor deposition zones sequentially, so that the evaporation source can be used to perform the vapor deposition operation in multiple directions simultaneously, thus improving the uniformity of film formation and utilization of the evaporation material.

Abstract: A component including a substrate surface coated with a coating including at least one MoN layer having a thickness not less than 40 nm. Between the substrate surface and the at least one MoN layer the component includes: i) a substrate surface hardened layer, which is a hardened, nitrogen-containing substrate surface layer that is the result of a nitriding treatment carried out at the substrate surface and has a thickness not less than 10 nm, preferably not less than 20 nm and not greater than 150 nm, and/or ii) a layer system composed of more than 2 MoN layers and more than 2 CrN layers, wherein the MoN and CrN layers forming the layer system are individual layers deposited alternatingly one on each other forming a multilayer MoN/CrN coating film.

Abstract: The invention relates to a method for the plasma treatment of an endoprosthesis having base body. The method includes inserting the base body into a vacuum chamber; executing a cleaning step with a plasma treatment of a surface of the base body that is to be coated; executing a treatment step in a plasma of the surface of the base body that is to be coated, wherein ions out of the plasma are implanted into an area of the base body that is close to the surface.

Abstract: An epitaxial growth device includes; a chamber; a susceptor; a supporting shaft, having a main column located coaxially with the center of the susceptor and supporting arms; and a lift pin, at least the surface layer region of the lift pin is made of a material having a hardness lower than the susceptor, the lift pin has a straight trunk part upper region configured to pass through the through-hole of the susceptor and having a surface roughness of from not less than 0.1 ?m to not more than 0.3 ?m, and the lift pin has a straight trunk part lower region configured to pass through the through-hole of the supporting arm and having a surface roughness of from not less than 1 ?m to not more than 10 ?m.

Abstract: A transparent sheet material comprising an organic, polymeric substrate and inorganic layers on each side of the substrate, wherein the overall thickness of the inorganic layer(s) on each side of the substrate is less than 5nm

Abstract: A surface-coated cutting tool includes a base material and a coating formed on a surface of the base material. The coating includes a first hard coating layer including crystal grains having a sodium chloride-type crystal structure. The crystal grain has a layered structure in which a first layer composed of nitride or carbonitride of AlxTi1-x and a second layer composed of nitride or carbonitride of AlyTi1-y are stacked alternately into one or more layers. The first layer each has an atomic ratio x of Al varying in a range of 0.76 or more to less than 1. The second layer each has an atomic ratio y of Al varying in a range of 0.45 or more to less than 0.76. The largest value of difference between the atomic ratio x and the atomic ratio y is 0.05?x-y?0.5.

Abstract: A TiN-based film includes TiON films having an oxygen content of 50% or above and TiN films which are laminated alternately on a substrate. In a TiN-based film forming method, a TiON film having an oxygen content of 50 at % or above and a TiN film are alternately formed on a substrate.

Abstract: An apparatus includes a raw material gas supply part including a discharge part for discharging a raw material gas and an exhaust port formed to surround the discharge part, reaction and modification regions formed apart from the raw material gas supply part, a reaction gas discharge part for discharging a reaction gas toward one of upstream and downstream sides, a modification gas discharge part for discharging a modification gas toward one of upstream and downstream sides, a reaction gas exhaust port formed to face an end portion of the other of the upstream and downstream sides of the reaction region, a modification gas exhaust port formed to face an end portion of the other of the upstream and downstream sides of the modification region, and plasma generation parts for reaction gas and modification gas which activate gases respectively supplied to the reaction and modification regions.

Abstract: Implementations described herein generally relate to methods for removing one or more processing by-products found in deposition systems, such as in vacuum forelines of vapor deposition systems. More specifically, implementations of the present disclosure relate to methods of reducing the buildup of hydrogen in systems. In one implementation, a method of processing a substrate in a deposition chamber is provided. The method comprises depositing a layer on the substrate, wherein hydrogen-containing by-products are produced in a vacuum foreline fluidly coupled with the deposition chamber during the depositing process. The method further comprises flowing an oxidizing agent gas into the vacuum foreline to react with at least a portion of the hydrogen-containing by-products in the foreline.

Abstract: Provided is a susceptor, capable of preventing occurrence of deep scratches on the back surface and beveled part of a wafer attributable to contact with lift pins or the susceptor, and reducing dust generation from the susceptor. A susceptor according to one embodiment of this disclosure includes a susceptor main body, and arc-shaped members. The bottom surface of a counterbore part is constituted of the entire front surfaces of the arc-shaped susceptor members, and a part of the front surface of the susceptor main body. When a wafer is conveyed, the entire front surfaces of the arc-shaped members ascended by lift pins support only the outer circumferential part of the back surface of the wafer by surface contact.

Abstract: A substrate processing apparatus having an improved film processing uniformity is provided. The substrate processing apparatus includes a partition configured to provide a gas supply channel and a gas supply unit connected to the gas supply channel. A gas flow channel communicating with the gas supply channel is formed in the gas supply unit. A first through-hole is formed to penetrate through at least a part of the partition. A second through-hole is formed to penetrate through at least a part of the gas supply unit. The first through-hole communicates with the gas flow channel via the second through-hole. The second through-hole is arranged between a center and an edge of the gas flow channel, and is arranged spaced apart from the edge.

Abstract: Described herein are cobalt compounds, processes for making cobalt compounds, and compositions comprising cobalt metal-film precursors used for depositing cobalt-containing films (e.g., cobalt, cobalt oxide, cobalt nitride, etc.). Examples of cobalt precursor compounds are (alkyne) dicobalt hexacarbonyl compounds, cobalt enamine compounds, cobalt monoazadienes, and (functionalized alkyl) cobalt tetracarbonyl. Examples of surfaces for deposition of metal-containing films include, but are not limited to, metals, metal oxides, metal nitrides, and metal silicides. Functionalized ligands with groups such as amino, nitrile, imino, hydroxyl, aldehyde, esters, halogens, and carboxylic acids are used for selective deposition on certain surfaces and/or superior film properties such as uniformity, continuity, and low resistance.

Abstract: A film forming apparatus according to an embodiment includes: a film forming chamber capable of housing a substrate therein; a gas supplier located in an upper part of the film forming chamber and having a plurality of nozzles supplying gases onto a film forming face of the substrate; a heater configured to heat the substrate; and a first protection cover having a plurality of opening parts at positions corresponding to the nozzles of the gas supplier, respectively.

Abstract: A vaporization system includes a vaporization chamber having a first portion and a second portion. A first fluid supply part is connected to the first portion of the vaporization chamber, and configured to supply a mixed fluid in which a first carrier gas and a liquid precursor are mixed, toward the second portion. A second fluid supply part is configured to supply a second carrier gas toward the mixed fluid at the second portion.

Abstract: A gas injection apparatus injecting process gases toward a substrate includes a base part, a first gas injection part on the base part, the first gas injection part to inject a first gas including a reaction-inhibiting functional group, a second gas injection part spaced apart from the first gas injection part in one direction on the base part, the second gas injection part to inject a second gas including a precursor of a specific material, and a third gas injection part spaced apart from the second gas injection part in the one direction on the base part, the third gas injection part to inject a third gas reacting with the precursor of the specific material.

Abstract: A film deposition apparatus includes a process chamber and a turntable provided in the process chamber. The turntable includes a substrate receiving region to receive a substrate thereon and provided along a circumferential direction of the turntable. A source gas supply unit extending along a radial direction of the turntable is provided above the turntable with a first distance from the turntable such that the source gas supply unit covers an entire length of the substrate receiving region in the radial direction. An axial-side supplementary gas supply unit is provided in the vicinity of the source gas supply unit and above the turntable with a second distance from the turntable. The second distance is longer than the first distance. The axial-side supplementary gas supply unit covers a predetermined region of the substrate receiving region on the axial side in the radial direction of the turntable.

Abstract: A gas injector is installed in a vertical heat treatment apparatus which performs a heat treatment on substrates held by a substrate holder and is loaded into a vertical reaction container around which a heating part is disposed. The gas injector supplies a film forming gas to the substrates into the reaction container. The gas injector includes: a tubular injector main body disposed inside the reaction container so as to extend in a vertical direction and has gas supply holes formed therein along the vertical direction; and a tubular gas introduction pipe installed to be integrated with the tubular injector main body in the vertical direction and includes a gas inlet to which the film forming gas is inputted and a gas introduction port which communicates with an internal space of the tubular injector main body and through which the film forming gas is introduced into the internal space.

Abstract: Methods and apparatus for depositing a cobalt layer in features formed on a substrate are provided herein. In some embodiments, a substrate processing chamber includes: a chamber body having a processing volume; a rotatable substrate support disposed within the chamber body, wherein the substrate support is configured to rotate one or more substrates arranged in a planar array between a first processing position and a second processing position, wherein the first processing position and the second processing position are independently thermally controlled; a showerhead disposed opposite the rotatable substrate support configured to expose the one or more substrates at the first processing position to a cobalt containing precursor; and a heat source disposed within the substrate support configured to heat the one or more substrates at the second processing position.

Abstract: The instant disclosure provides a large-area laser heating system including a laser module, a reaction module and a guiding module. The laser module includes a vertical-cavity surface-emitting laser for emitting a laser beam and a laser adjusting structure connected to the vertical-cavity surface-emitting laser. The incident angle of the laser beam emitted by the vertical-cavity surface-emitting laser is adjusted by the laser adjusting structure. The reaction module includes a sample holder for carrying a sample. The guiding module is connected between the laser module and the reaction module, and the laser beam emitted by the vertical-cavity surface-emitting laser passes through the guiding module and projects onto the surface of the sample.

Abstract: A graphite boat transmission mechanism used in a PECVD device includes a stand column and a boat pushing mechanism fixed at opposite sides in the PECVD device and a side boat leaving mechanism fixed at the bottom of the PECVD device. Separated temporary storage sections are fixed on the stand column from top to bottom, temporary storage sections have a temporary storage section center line in a vertical direction, an SIC oar horizontally stretches from the boat pushing mechanism, a lift channel section is arranged between the SIC oar and the temporary storage sections, the stand column has a manipulator moving up and down along the stand column, the manipulator grabs the graphite boat on the SIC oar and then transmits the graphite boat to the lift channel, and the side boat leaving mechanism is fixed at the bottom of the PECVD device and located below the temporary storage sections.

Abstract: Processing methods comprising depositing an initial hardmask film on a substrate by physical vapor deposition and exposing the initial hardmask film to a treatment plasma comprising a silane compound to form the hardmask.

Abstract: Methods for forming thin, pinhole-free conformal metal layers on both conducting and non-conducting surfaces, where the morphology and properties of the metal layers are tuned to meet desired parameters by adjusting the concentration of ionic liquids during the deposition process. The formed metal films contain tunable properties for solar and electronic use and provide specific advantages for non-conducting surfaces, which are otherwise unsuitable for electroplating without the presence of the formed metal films. The disclosed methods do not require the presence of a voltage or external electric field but form the metal films through an electroless technique using electrostatic interactions between negatively charged nanoparticles. In addition, the disclosed methods are compatible with solution phase processing and eliminate the need to transfer the surfaces into a vacuum chamber for a chemical or physical vapor deposition to form a metal layer.

Abstract: A method for fabricating a substrate having an electrical interconnection structure is provided, which includes the steps of: providing a substrate body having a plurality of conductive pads and first and second passivation layers sequentially formed on the substrate body and exposing the conductive pads; forming a seed layer on the second passivation layer and the conductive pads; forming a first metal layer on each of the conductive pads, wherein the first metal layer is embedded in the first and second passivation layers without being protruded from the second passivation layer; and forming on the first metal layer a second metal layer protruded from the second passivation layer. As such, when the seed layer on the second passivation layer is removed by etching using an etchant, the etchant will not erode the first metal layer, thereby preventing an undercut structure from being formed underneath the second metal layer.

Abstract: An oxide film removing method is a method of removing an oxide film formed in a surface of a superalloy part that contains a first metal as a base metal and a second metal different from the first metal. The oxide film removing method includes arranging the superalloy part inside a heating chamber; reducing the oxide of the base metal to the base metal by heating the inside of the heating chamber in a condition that a reduction gas atmosphere or a vacuum atmosphere is maintained; and carrying out acid processing to apply acid solution to the superalloy part after the reduction. The oxide film formed in the surface of the superalloy is removed effectively without using a highly toxic gaseous fluoride.

Abstract: Corrosion of steel in acidic solution is inhibited using a mixture of a compound in which a plurality of heterocyclic aromatic groups with a quaternary nitrogen atom are connected together, such as by a linking group which may be covalently attached to the quaternary nitrogen atoms of the aromatic heterocyclic rings, and a polarizable adsorption-intensifying anion.

Abstract: A composition and method of inhibiting white rust on galvanized steel in water system. The composition preferably comprises two parts, a first part comprising oleylamine and optionally comprising 2-diethylaminoethanol and cyclohexylamine, and a second part comprising phosphonobutane tricarboxylic acid, tolytriazole, and a polymer, and optionally comprising a tracer or sodium hydroxide. A preferred composition comprises two commercially available products, Cetamine V217 S and Chem-Aqua 31155. A preferred method of inhibiting white rust comprises adding the two parts of the composition or two commerically available products to the water in a water system to be treated in an amount sufficient to provide a concentration of the first part of around 200-500 ppm and of the second part of around 50-150 ppm.

Abstract: An additive, such as an aminal, a dibutylamine, or combinations thereof, may treat a system having a corrosion inhibitor in the form of at least one sulfur species and/or at least one phosphorous-containing compound. The additive may be introduced or added to the corrosion inhibitor within an aqueous system, an aerobic system, and/or an anaerobic system to inactivate the sulfur species and/or the phosphorous-containing compounds.

Abstract: The present invention relates to an apparatus for generating electrolyzed water, which generates hydrogen water comprising hydrogen molecules in a high concentration. Two sheets of porous cathode plates each provided on the surface thereof with an ion-exchange membrane are provided across an anode plate so as for the ion-exchange membranes to face the anode plate and so as to form a space allowing water to flow therethrough, between the anode plate and each of the ion-exchange membranes, and thus four electrolysis chambers are formed.

Abstract: The present invention relates to a catalyst for water splitting consisted of an oxide or a hydroxide that comprises silicon and one or more transition metals selected from a group consisting of Mn, Fe, Co, Ni, and Cu, and is amorphous, and a method of preparing the same.

Abstract: The present invention provides an electrolyzing apparatus that includes a detector configured to detect an abnormality in a electrolytic bath and thereby enables a quick detection of the occurrence of the abnormality and that is less prone to a malfunction in which, due to an environmental change, a normal state is misjudged as abnormal and electrolysis is stopped. An electrolyzing apparatus of the present invention includes an electrolyzing section and a detecting section, the electrolyzing section being configured to receive an electrolytic substance, electrolyze the electrolytic substance to obtain an electrolysis product, and discharge the electrolysis product. The electrolyzing section includes electrolysis electrodes.

Abstract: The invention comprises methods and apparatuses for the electrorefining of Mg from Al or Mg alloy scrap. The invention utilizes the density and charge features of Mg present in a melted alloy to continuously extract Mg and Mg alloys from a melted Al alloy feed.

Abstract: Reaction products of amines and polymers containing saturated heterocyclic moieties may be used as levelers in metal electroplating baths. The reaction products may plate metal with good surface properties and good physical reliability.

Abstract: A barrel plating or high-speed rotary plating method for electronic components, and a neutral tin plating solution used therein. A plating solution that includes (A) stannous ions, (B) an acid or a salt, (C) a complexing agent, and (D) a diamine that has a polyoxyalkylene chain, and that has a pH in a range between 4 and 8 is used. The use of this neutral tin plating solution prevents the electronic components from coupling together during the barrel plating, enabling an improvement in manufacturability in barrel plating.

Abstract: When copper is filled in a fine groove or hole (hereinafter sometimes referred to as a “trench”) of a base to be plated, which has formed therein the trench, by copper electroplating, the occurrence of voids and the deposition of copper on a region other than the trench have heretofore been problems. To solve the problems, the present invention provides an additive for a copper electroplating bath, consisting of at least one polymer compound selected from polymer compounds each represented by the following general formula (1) or the following general formula (2), each of the polymer compounds having a weight-average molecular weight of from 20,000 to 10,000,000. (In the formulae, X represents at least one unit selected from units represented by specific structures, and a ratio of a to b, i.e. “a:b” falls within the range of from 10:90 to 99:1.

Abstract: A method provides a structure that includes a substrate having a metal layer disposed on a surface and a metal feature disposed on the metal layer. The method further includes immersing the structure in a plating bath contained in an electroplating cell, the plating bath containing a selected solder material; applying a voltage potential to the structure, where the structure functions as a working electrode in combination with a reference electrode and a counter electrode that are also immersed in the plating bath; and maintaining the voltage potential at a predetermined value to deposit the selected solder material selectively only on the metal feature and not on the metal layer. An apparatus configured to practice the method is also disclosed.

Abstract: There is disclosed an improved leak checking method which can accurately test a sealing performance of a substrate holder more than conventional leak check techniques. The leak checking method includes: holding a substrate with a substrate holder, the substrate holder including a first holding member and a second holding member, the second holding member having an opening through which a surface of the substrate is exposed; pressing a sealing projection of the second holding member against the surface of the substrate when holding the substrate with the substrate holder; covering the surface of the substrate, exposed through the opening, and the sealing projection with a sealing cap; forming a hermetic space between the sealing cap and the substrate holder; introducing a pressurized gas into the hermetic space; and detecting a decrease in pressure of the pressurized gas in the hermetic space.

Abstract: The present disclosure relates to methods of monitoring the concentrations of silver ion and complexing agent in tin-silver (SnAg) electrodeposition solutions, and analysis and process control using such methods. Methods can include adding a precipitating agent to an electrodeposition solution including at least tin ions, silver ions, and complexing agent to cause a reaction between at least a portion of the precipitating agent and substantially all of the silver ions (to precipitate silver ions as a precipitant); adding a metallic salt to the electrodeposition solution to cause a reaction with substantially all of the remaining precipitating agent; measuring the endpoint of the silver ion back titration; further adding metallic salt to cause a further reaction with the complexing agent; and measuring the endpoint of the complexing agent titration.

Abstract: A unitary graphene layer or graphene single crystal containing closely packed and chemically bonded parallel graphene planes having an inter-graphene plane spacing of 0.335 to 0.40 nm and an oxygen content of 0.01% to 10% by weight, which unitary graphene layer or graphene single crystal is obtained from heat-treating a graphene oxide gel at a temperature higher than 100° C., wherein the average mis-orientation angle between two graphene planes is less than 10 degrees, more typically less than 5 degrees. The molecules in the graphene oxide gel, upon drying and heat-treating, are chemically interconnected and integrated into a unitary graphene entity containing no discrete graphite flake or graphene platelet. This graphene monolith exhibits a combination of exceptional thermal conductivity, electrical conductivity, mechanical strength, surface smoothness, surface hardness, and scratch resistance unmatched by any thin-film material of comparable thickness range.

Abstract: A seed crystal holder for pulling up a single crystal is made of a carbon fiber-reinforced carbon composite material, and has a substantially cylindrical shape with a hollow space having a shape matching an outer shape of a substantially rod-shaped seed crystal. A direction of carbon fibers at a part in contact with at least an outer peripheral surface of the seed crystal has isotropy as viewed from a central axis of the hollow space.

Abstract: Systems and methods are disclosed for rapid growth of Group III metal nitrides using plasma assisted molecular beam epitaxy. The disclosure includes higher pressure and flow rates of nitrogen in the plasma, and the application of mixtures of nitrogen and an inert gas. Growth rates exceeding 8 ?m/hour can be achieved.

Abstract: A film forming apparatus according to an embodiment includes: a film forming chamber configured to house therein a substrate to perform film forming processing; a gas supplier located in an upper part of the film forming chamber and configured to supply a process gas onto the substrate; and a heater configured to heat the substrate, wherein the film forming chamber has a temperature-increase suppression region being a lower part of the gas supplier and suppressing a temperature increase of the gas supplied to an upper part of the heater.

Abstract: To provide a lithium niobate (LN) substrate which allows treatment conditions regarding a temperature, a time, and the like to be easily managed and in which an in-plane distribution of a volume resistance value is very small, and a method of producing the same. A method of producing an LN substrate by using an LN single crystal grown by the Czochralski process, in which an LN single crystal having a Fe concentration of 50 mass ppm or more and 1000 mass ppm or less in the single crystal and processed into a form of a substrate is buried in an Al powder or a mixed powder of Al and Al2O3, and heat-treated at a temperature of 450° C. or more and less than 500° C., to produce a lithium niobate single crystal substrate having a volume resistivity controlled to be within a range of 1×108 ?·cm or more to 1×1010 ?·cm or less.

Abstract: To provide a lithium niobate (LN) substrate which allows treatment conditions regarding a temperature, a time, and the like to be easily managed and in which an in-plane distribution of a volume resistance value is very small, and a method of producing the same. A method of producing an LN substrate by using an LN single crystal grown by the Czochralski process, in which an LN single crystal having a Fe concentration of 50 mass ppm or more and 1000 mass ppm or less in the single crystal and processed into a form of a substrate is buried in an Al powder or a mixed powder of Al and Al2O3, and heat-treated at a temperature of 350° C. or more and less than 450° C., to produce a lithium niobate single crystal substrate having a volume resistivity controlled to be within a range of more than 1×1010 ?·cm to 2×1012 ?·cm or less.

Abstract: A method for making a fiber reinforcement with variations in transverse cross section is disclosed. The method includes forming a fiber comprising polymeric material and exposing the fiber to a heat treatment, such that at least a portion of the polymeric material at or near said surface of said fiber is at or above the melting point temperature and substantially all of the polymeric material at or near the core is below the melting point temperature. The method further includes cooling the fiber to a temperature below the melting point temperature.

Abstract: The present invention discloses an electrospinning composition comprising a catalyst and a functionalized polymer or copolymer bearing one or more epoxy ring. The mixture further comprises an anhydride, preferably phthalic anhydride as a cross-linking agent. Wherein a molar ratio of epoxy to anhydride in the electrospinning composition is within the range of 1:1 to 50:1. The present invention further discloses a preparation method of the electrospinning composition and an electrospun nano-/submicrostructures prepared using the method and composite material comprising the electrospun nano-/submicrostructures.

Abstract: A card clothing wire (1) for use on drums in carding machines has a base (2) and a blade (3) formed on the base, the base and blade having a total height of the wire (h1) of 1.5 mm to 5 mm. The blade (3) has teeth (4), wherein each tooth (4) includes a first tooth tip (5) having a tooth depth (h6) of 0.3 mm to 1.0 mm; a tooth pitch (p) of 1.4 mm to 2.5 mm; a back face with a back angle (?1) of 50 to 80 angle degrees; and a tooth front face with a working angle (?). Each tooth (4) further includes a second tooth tip (6) formed at a tip spacing (a) from the first tooth tip (5), the second tooth tip (6) having a back face with a back angle (?2) of 50 to 80 angle degrees.

Abstract: The invention relates to a method for depositing a yarn (5) end (50) on a bobbin (90) in a defined manner when winding yarn (5) on a bobbin (90) at a workstation of a textile machine, in which the yarn (5) end (50) is deposited on a tube in a defined manner outside the profile (P) of a standard yarn (5) package. To be deposited on the tube outside the profile (P) of the standard package of yarn, the yarn is prepared by the means of the workstation.

Abstract: The invention relates to a method for depositing a yarn (5) end (50) on a bobbin (90) in a defined manner when winding yarn (5) on a bobbin (90) at a workstation of a textile machine, in which the yarn (5) end (50) is wound on the bobbin (90), on which prior to being deposited on a tube in a defined manner outside the profile (P) of a standard package of yarn (5), the yarn end is detected by the means of an attending device, After being detected on the bobbin (90), the yarn (5) is passed to the means of a workstation, with the aid of which the yarn (5) is subsequently deposited on the tube outside the profile (P) of the standard package of the yarn (5).

Abstract: A hybrid fiber which includes: a metal wire having a roughened surface; and a fiber is provided. In the hybrid fiber, the metal wire and the fiber are combined.