Abstract: An industrial scale smelting system for using arc furnaces for processing large quantities of ore in a production manner for recovery of a plurality of elements in useful quantities using a plurality of electrowinning processes with the options of providing efficient energy recovery and raw material recovery and recirculation capabilities.

Abstract: Disclosed is an improved bulk metallic glass alloy and methods of making the alloy in which the alloy has the structure ZraNbbCucNidAle, wherein a-e represent the atomic percentage of each respective element, and wherein b/a is less than about 0.040, and c/d is less than 1.15. The bulk metallic glass alloy has improved thermal stability and an increased super cooled liquid region rendering it capable of being thermoplastically formed into a variety of shapes and sizes.

Abstract: A cemented carbide and a coated cemented carbide each include a Zr carboxide. The cemented carbide includes a hard phase containing main component tungsten carbide and a binder phase containing at least one main component element selected from the group consisting of Co, Ni and Fe. The cemented carbide includes 75 to 95 mass % of the hard phase and 5 to 25 mass % of the binder phase in an inner region inner than 500 ?m below a surface of the cemented carbide. The hard phase includes a Zr carboxide; and Zrsur/Zrin is from 0.25 to 0.80 when an average content of the Zr carboxide in a surface region which ranges from the surface of the cemented carbide to a depth of 500 ?m therebelow is denoted by Zrsur and an average content of the Zr carboxide in an inner region inner than the surface region is denoted by Zrin.

Abstract: A method for forming an austempered iron composition with a nanoscale microstructure includes a step of heating an iron-carbon-silicon alloy with silicon to a first temperature that is lower than A1 for the iron-carbon-silicon alloy. The iron-carbon-silicon alloy is then adiabatically deformed such that the temperature of the iron-carbon-silicon alloy rises to a second temperature which is sufficient to form proeutectoid ferrite and austenite. The iron-carbon-silicon alloy is cooled to a first austempering temperature. The iron-carbon-silicon alloy is then heated to a second austempering temperature that is greater than the first austempering temperature to form a dual phase microstructure. Characteristically, the dual phase microstructure includes proeutectoid ferrite and ausferrite.

Abstract: The disclosure relates to a production of a semi-finished product for a manufacturing of objects, particularly tools, from a precipitation-hardenable alloy having a composition in wt. % of Co=15.0 to 30.0, Mo up to 20.0, W up to 25.0, Fe and manufacturing-specific impurities as a remainder. To achieve an economical, highly precise production of objects or tools of the above alloy with reduced effort, it is provided to prevent a formation of ordered structures of the Fe atoms and Co atoms in the matrix of the type (Fe+(29×Co))+approximately 1 wt. % Mo of the semi-finished product by a thermal special treatment, to thus improve a workability of the material.

Abstract: The object of the invention is an austenitic stainless steel with high plasticity induced by twinning with innovative chemical composition, and the use thereof in the automobile industry and in all applications wherein both a high resistance to corrosion and a high formability is requested, together with mechanical features of high-resistant steels. The invention also concerns a process for the production of this austenitic stainless steel with high twinning-induced plasticity.

Abstract: An age-hardenable steel having a composition consisting of: C: 0.05 to 0.20%, Si: 0.01 to 0.50%, Mn: 1.5 to 2.5%, S: 0.005 to 0.08%, Cr: more than 0.50% and not more than 1.6%, Al: 0.005 to 0.05%, V: 0.25 to 0.50%, Mo: 0 to 1.0%, Cu: 0 to 0.3%, Ni: 0 to 0.3%, Ca: 0 to 0.005%, and Bi: 0 to 0.4%, the balance being Fe and impurities. Within the impurities, P?0.03%, Ti<0.005%, and N<0.0080%, and [C+0.3Mn+0.25Cr+0.6Mo?0.68], [C+0.1Si+0.2Mn+0.15Cr+0.35V+0.2Mo?1.05], and [?4.5C+Mn+Cr?3.5V?0.8Mo?0.12]. The steel has hardness before aging of not more than 310 HV. After aging, the fatigue strength is not less than 480 MPa and absorbed energy at 20° C. is not less than 12 J.

Abstract: An alpha-beta titanium alloy comprises Al at a concentration of from about 4.7 wt. % to about 6.0 wt. %; V at a concentration of from about 6.5 wt. % to about 8.0 wt. %; Si at a concentration of from about 0.15 wt. % to about 0.6 wt. %; Fe at a concentration of up to about 0.3 wt. %; O at a concentration of from about 0.15 wt. % to about 0.23 wt. %; and Ti and incidental impurities as a balance. The alpha-beta titanium alloy has an Al/V ratio of from about 0.65 to about 0.8, where the Al/V ratio is defined as the ratio of the concentration of Al to the concentration of V in the alloy, with each concentration being in weight percent (wt %).

Abstract: This high-strength cold-rolled steel sheet having excellent uniform elongation and hole expandability contains, C: 0.01 to 0.4%; Si: 0.001 to 2.5%; Mn: 0.001 to 4.0%; P: 0.001 to 0.15%; S: 0.0005 to 0.03%; Al: 0.001 to 2.0%; N: 0.0005 to 0.01%; and O: 0.0005 to 0.01%; in which Si+Al is limited to less than 1.0%, and a balance being composed of iron and inevitable impurities, in which at a sheet thickness center portion, an average value of pole densities of the {100}<011> to {223}<110> orientation group is 5.0 or less, and a pole density of the {332}<113> crystal orientation is 4.0 or less, a metal structure contains 5 to 80% of ferrite, 5 to 80% of bainite, and 1% or less of martensite in terms of an area ratio and the total of martensite, pearlite, and retained austenite is 5% or less, and an r value (rC) in a direction perpendicular to a rolling direction is 0.70 or more and an r value (r30) in a direction 30° from the rolling direction is 1.10 or less.

Abstract: Components for an automatic motor vehicle transmission including a band brake drum, a clutch housing or hub having a seal surface or a clutch housing or hub utilized in a friction clutch assembly having a spline set. All of these components are fabricated of aluminum and the outer surface of the band brake drum, the housing or hub sealing surface and the area of the spline set includes a thin coating of a thermally sprayed steel material. The thermally sprayed steel material may be a low carbon steel such as SAE 1008 or 1010, a similar alloy, iron or other metal. The resulting components thus exhibit the weight saving of aluminum while providing excellent service life due to the enhanced strength and wear resistance provided by the thermally sprayed steel coating.

Abstract: Provided is a process for preparing an electrode comprising an iron active material. The process comprises first fabricating an electrode comprising an iron active material, and then treating the surface of the electrode with water to thereby create an oxidized surface. The resulting iron electrode is preconditioned prior to any charge-discharge cycle to have the assessable surface of the iron active material in the same oxidation state as in discharged iron negative electrodes active material.

Abstract: Provided is an apparatus for continuously nitriding a strip continuously being fed after cold rolling and before secondary recrystallization annealing in a production line of a grain-oriented electrical steel sheet, comprising: a nitriding zone for nitriding the strip; a cooling zone for cooling the strip; and an optional heating zone provided upstream of the nitriding zone for heating the strip, wherein, the nitriding zone is provided with glow discharge electrodes, and by plasma nitriding the strip by glow discharge with the glow discharge electrodes functioning as positive electrodes and the strip functioning as a negative electrode, inhibitor forming elements are uniformly dispersed over the full length and full width of the strip and a grain-oriented electrical steel sheet with excellent magnetic properties with no variation is obtained.

Abstract: Liquid precursor material of a coating substance and a solvent is provided in a reservoir (STEP1, STEP1?). In one variant the liquid precursor material is distilled (STEP2), the resultant liquid coating substance is vaporized (STEP3) and ejected through a vapor distribution nozzle arrangement (7) into a vacuum recipient (3) and onto substrate 5 to be coated. Alternatively, the liquid precursor material is directly vaporized (STEP3?). From the two-component vapor coating substance vapor is applied to substrate 5? to be coated. In this variant separation of solvent vapor and coating substance vapor is performed especially downstream vaporizing (STEP2?).

Abstract: An evaporation apparatus includes a holder, a source, a first sensor, a calculating unit, and an actuator. The holder is configured to hold a substrate. The source is configured to evaporate an evaporation material to be deposited on the substrate. The first sensor is configured to detect evaporation rates of the evaporation material at plural detection positions. The calculating unit is configured to estimate an evaporation angle based on the detected evaporation rates of the evaporation material at the detection positions. The actuator is configured to move the source based on the estimated evaporation angle.

Abstract: Embodiments of the present disclosure provide an evaporation crucible and an evaporation device. The evaporation crucible includes a crucible body and a fluid guide member communicated with the crucible body, and a plurality of gas inlet nozzles being distributed on a side wall of the fluid guide member.

Abstract: A sintered compact magnesium oxide target for sputtering has a purity of 99.99 wt % or higher excluding C, a density of 3.57 g/cm3 or higher, and a whiteness of 60% or less. To uniformly deposit a magnesium oxide film, a magnesium oxide target having a higher purity and a higher density is demanded. An object is to provide a target capable of realizing the above and a method for producing such a target. While a magnesium oxide sintered compact sputtering target is produced by hot-pressing a raw material powder, there is a problem in that color shading occurs in roughly ?60 (within a circle having a diameter of 60 mm) at the center part of the target. Conventionally, no particularly attention was given to this problem. However, in recent years, it has become necessary to investigate and resolve this problem in order to improve the deposition quality.

Abstract: According to the present disclosure, a flexible substrate coating apparatus is provided. The flexible substrate coating apparatus includes a vacuum process chamber for processing a flexible substrate. The vacuum process chamber includes one or more deposition units and a cleaning unit positioned directly downstream of the one or more deposition units. In another aspect, a method for depositing a thin-film on a flexible substrate is provided. The method for depositing a thin-film on a flexible substrate includes vacuum coating of the flexible substrate, thereby depositing one or more layers on the flexible substrate, and cleaning the flexible substrate directly downstream of the coating.

Abstract: There is provided a semiconductor manufacturing device, including: a processing vessel; a partition wall that divides at least a part of a space in the processing vessel into a growth section and a cleaning section; a substrate holding member disposed in the growth section; a source gas supply system that supplies a source gas into the growth section; a cleaning gas supply system that supplies a cleaning gas into the cleaning section; and a heater that heats the growth section and the cleaning section.

Abstract: A method of operating a filament assisted chemical vapor deposition (FACVD) system. The method includes depositing a film on a substrate in a reactor of the FACVD system. During the depositing, a DC power is supplied to a heater assembly to thermally decompose a film forming material. The method also includes cleaning the heater assembly, or an interior surface of the reactor, or both. During the cleaning, an alternating current is supplied to the heater assembly to energize a cleaning media into a plasma.

Abstract: A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: supplying a precursor gas to the substrate in a process chamber through a first nozzle; supplying an oxygen-containing gas to the substrate in the process chamber through a second nozzle made of quartz and differing from the first nozzle; and supplying a hydrogen-containing gas to the substrate in the process chamber through the second nozzle. The method further includes, prior to performing the act of forming the film, etching a surface of the second nozzle to a depth which falls within a range of 15 ?m or more and 30 ?m or less from the surface of the second nozzle.

Abstract: The present invention relates to a source container and to a vapor-deposition reactor. The source container according to one embodiment of the present invention comprises: a container comprising an inner wall for delimiting a first space for holing a source material, and a second space which is adjacent to the first space and is for the mixing of vapor emitted from the source material and a carrier gas taken into the inside thereof; a carrier gas inflow pathway which connects the outside of the container second space; a mixed gas discharge pathway which connects the outside of the container and the second space; and a flow-limiting member which expands inside the second space, and provides a first flow barrier surface between the inflow port and the discharge port.

Abstract: A method comprises transporting a first stream of a carrier gas to a delivery device that contains a liquid precursor compound. The method further comprises transporting a second stream of the carrier gas to a point downstream of the delivery device. The first stream after emanating from the delivery device and the second stream are combined to form a third stream, such that the dew point of the vapor of the liquid precursor compound in the third stream is lower than the temperature of the plumbing that transports the vapor to a CVD reactor or a plurality of CVD reactors. The flow direction of the first stream, the flow direction of the second stream and the flow direction of the third stream are unidirectional and are not opposed to each other.

Abstract: A showerhead for a semiconductor processing reactor formed by an array of showerhead tiles. Each showerhead tile has a plurality of process gas apertures, which may be in a central area of the tile or may extend over the entire tile. Each showerhead tile can be dimensioned for processing a respective substrate or a plurality of substrates or the array can be dimensioned for processing a substrate. An exhaust region surrounds the process gas apertures. The exhaust region has at least one exhaust aperture, and may include an exhaust slot, a plurality of connected exhaust slots or a plurality of exhaust apertures. The exhaust region surrounds the array of showerhead tiles, or a respective portion of the exhaust region surrounds the plurality of process gas apertures in each showerhead tile or group of showerhead tiles. A gas curtain aperture may be between the exhaust region and the process gas apertures of one of the showerhead tiles or adjacent to the central area of the tile.

Abstract: A technique includes forming a film containing a first element, a second element, and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first solid layer containing the first element and carbon, and having a thickness of more than one atomic layer and equal to or less than several atomic layers, by supplying a precursor gas having a chemical bond of the first element and carbon to the substrate and confining the precursor gas within the process chamber, under a condition in which the precursor gas is autolyzed and at least a part of the chemical bond of the first element and carbon is maintained without being broken; and forming a second solid layer by supplying a reaction gas containing the second element to the substrate to modify the first solid layer.

Abstract: A solution including a precious metal nanoparticle and a polymer polymerized from at least two monomers, (1) a monomer having two or more carboxyl groups or carboxyl acid salt groups and (2) a monomer which has ? electron-available features. The solution is useful for a catalyst of a process for electroless plating a metal on non-conductive surface.

Abstract: A compression shoe for use on a concrete products forming machine comprises a main body and a plated layer overlaid on the main body. The main body is configured to be slidingly received within a mold cavity of a concrete products mold. The plated layer overlaid on the main body of the compression shoe comprises a uniform electroless nickel (Ni), phosphorus (P), and polytetrafluoroethylene (PTFE) nano dispersion coating to effect enhanced material release characteristics by preventing the build-up of material on the compression shoes and enhancing their wear characteristics.

Abstract: A method of coating the surface of a metal substrate includes a) applying a first composition on the surface of a metal substrate, the first composition being a solution comprising a liquid medium including sol-gel precursors of alcoxysilane type or of metallo-organic type; b) subjecting the first composition to first heat treatment to form an anchor layer on the metal substrate in which the sol-gel precursors are bonded to the metal substrate, a first temperature being imposed during the first heat treatment that is sufficient to eliminate all or part of the liquid medium and to encourage the bonding of the sol-gel precursors to the metal substrate; and c) applying a second composition on the anchor layer. The second composition includes coating compounds to obtain a coating on the anchor layer by forming bonds between the sol-gel precursors and the coating compounds.

Abstract: A composite structural body includes a base material; and a film-like structural body formed on a surface of the base material by causing an aerosol to impinge on the base material. The aerosol contains fine particles dispersed in a gas, and a distance between an end part of the film-like structural body and an outermost part closest to the end part of a portion of the film-like structural body has a film thickness equal to an average film thickness of the film-like structural body as viewed perpendicular to the surface being 10 times or more of the average film thickness.

Abstract: The invention relates to a substrate having at least one main surface comprising at least one non-noble metallic bonding landing pad covered by a capping layer thereby shielding the non-noble metallic bonding landing pad from the environment. This capping layer comprises an alloy, the alloy being NiB or CoB and containing an atomic concentration percentage of boron in the range of 10% to 50%.

Abstract: Features for an aqueous reactor include a field generator. The field generator includes a series of parallel conductive plates including a series of intermediate neutral plates. The intermediate neutral plates are arranged in interleaved sets between an anode and a cathode. Other features of the aqueous reactor may include a sealed reaction vessel, fluid circulation manifold, electrical power modulator, vacuum port, and barrier membrane. Methods of using the field generator include immersion in an electrolyte solution and application of an external voltage and vacuum to generate hydrogen and oxygen gases. The reactor and related components can be arranged to produce gaseous fuel or liquid fuel. In one use, a mixture of a carbon based material and a liquid hydrocarbon is added. The preferred carbon based material is powdered coal.

Abstract: There are provided methods for preparing lithium hydroxide. For example, such methods can comprise submitting an aqueous composition comprising a lithium compound to an electrolysis under conditions suitable for converting at least a portion of said lithium compound into lithium hydroxide. There are also provided methods for preparing lithium sulphate.

Abstract: A chemical reactor and method for operation. The reactor enables N pairwise fluid contacts among k chemical fluids, with k?2 and N?4 and comprises: a reaction layer extending in a plane subtended by two directions; N chemical cells, each including two circuit portions, designed for enabling circulation of two of the k chemical fluids, respectively, the two circuit portions intersecting each other, thereby enabling one pairwise fluid contact for the two of the k chemical fluids; and a fluid distribution circuit comprising: k sets of inlet orifices sequentially alternating along lines parallel to one of the two directions, for respectively dispensing k chemical fluids to the reaction layer; and k sets of outlet orifices sequentially alternating along lines parallel to the inlet orifices, for respectively collecting k chemical fluids from the reaction layer, and wherein, each circuit portion connects an inlet orifice to an outlet orifice.

Abstract: In a method for removing a substance from a feedstock comprising a solid metal or a solid metal compound, the feedstock is contacted with a fused-salt melt. The fused-salt melt contains a fused salt, a reactive-metal compound, and a reactive metal. The fused salt comprises an anion species which is different from the substance, the reactive-metal compound comprises the reactive metal and the substance, and the reactive metal is capable of reaction to remove at least some of the substance from the feedstock. A cathode and an anode contact the melt, and the feedstock contacts the cathode. An electrical current is applied between the cathode and the anode such that at least a portion of the substance is removed from the feedstock. During the application of the current, a quantity of the reactive metal in the melt is maintained sufficient to prevent oxidation of the anion species of the fused salt at the anode.

Abstract: A method to extract and refine metal products from metal-bearing ores, including a method to extract and refine titanium products. Titanium products can be extracted from titanium-bearing ores with TiO2 and impurity levels unsuitable for conventional methods.

Abstract: The method, apparatus and product relate to the electrochemical reduction of a solid feedstock (20) to produce a product. A container (2) is filled with a fused salt (6), and one or more anodes (14) contact the fused salt. A cathode (18) is loaded with feedstock and engages with a transport apparatus (22, 36, 40) which locates and moves the cathode past the anodes(s), while the cathode and the feedstock contact the fused salt. As the cathode moves past the anodes(s), a voltage applied between the cathode and the anode(s) electrochemically reduces the solid feedstock to form the product.

Abstract: System, method and apparatus for measuring electrolysis cell operating conditions and communicating the same are disclosed. The system includes a selectively positionable member coupled to an analytical apparatus, wherein the selectively positionable is configured to move the analytical apparatus into and out of physical communication with a bath. The system may also include a crust breaker for breaking the surface of a bath and an electronic device for measuring bath level.

Abstract: Disclosed herein are lipseal assemblies for use in an electroplating clamshell for engaging and supplying electrical current to a semiconductor substrate during electroplating, which include an elastomeric lipseal for engaging the semiconductor substrate during electroplating, and wherein upon engagement the elastomeric lipseal forms multiple radially-separated sealing contact surfaces with the substrate which substantially exclude plating solution from a peripheral region of the substrate. Said lipseal assemblies may also include one or more electrical contact elements for supplying electrical current to the semiconductor substrate during electroplating.

Abstract: A method for producing a mono-crystalline sheet includes providing at least two aperture elements forming a gap in between; providing a molten alloy including silicon in the gap; providing a gaseous precursor medium comprising silicon in the vicinity of the molten alloy; providing a silicon nucleation crystal in the vicinity of the molten alloy; and bringing in contact said silicon nucleation crystal and the molten alloy. A device for producing a mono-crystalline sheet includes at least two aperture elements at a predetermined distance from each other, thereby forming a gap, and being adapted to be heated for holding a molten alloy including silicon by surface tension in the gap between the aperture elements; a precursor gas supply supplies a gaseous precursor medium comprising silicon in the vicinity of the molten alloy; and a positioning device for holding and moving a nucleation crystal in the vicinity of the molten alloy.

Abstract: After melting raw materials, a distance between a raw material melt surface and a heat-shielding member disposed so as to face to the melt surface is adjusted based on temporal changes in chamber inside conditions, such as the heater temperature at the time of completion of the seed crystal equilibration operation carried out after completion of the raw material melting procedure and/or lag time required for completion of the seed crystal equilibration operation following completion of the raw material melting procedure. As a result, single crystals can be produced efficiently and in high yield, and further, by controlling the crystal interior temperature gradient by modifying the distance between the melt surface and the heat-shielding member, it becomes possible to control the ratio V/G (V:pulling speed, G:crystal interior temperature gradient) to thereby produce single crystals free of crystal defects such as COPs and/or dislocation clusters.

Abstract: A system for growing a crystal ingot from a melt includes a crucible assembly configured to contain the melt and a susceptor configured to support the crucible assembly. The crucible assembly includes a substantially transparent crucible. The system further includes a heating system for generating thermal energy and disposed to supply thermal energy to the susceptor via thermal radiation. The susceptor enables transfer of thermal energy to the melt via radiation through the transparent crucible.

Abstract: An embodiment comprises: a chamber; a crucible provided in the chamber and accommodating a molten liquid which is a raw material for single crystal growth; a crucible screen disposed on the upper end of the crucible; and a moving unit for raising or lowering the crucible screen, wherein the crucible screen and a first upper adiabatic unit are raised to control the stroke distance, thereby preventing the impossibility of a lift-off process caused by a shortage of the stroke distance and the generation of cracks in single crystals.

Abstract: The present invention provides a method of raising the rate of reduction of the dislocation density accompanying growth of an SiC single crystal to counter the increase in the threading screw dislocations formed near the interface of the seed crystal and grown SiC single crystal and thereby produce an SiC single-crystal ingot with a small threading screw dislocation density from the initial stage of growth.

Abstract: A method for manufacturing a single crystal diamond in which vapor phase synthetic single crystal diamond is additionally deposited on a single crystal diamond seed substrate obtained by vapor phase synthesis, includes a step of measuring flatness of the seed substrate, a step of determining whether or not to flatten the seed substrate based on the measurement result of the flatness, and any one of the following two steps of a step of additionally depositing the vapor phase synthetic single crystal diamond after flattening the seed substrate for which the flattening is necessary based on the determination and a step of additionally depositing the vapor phase synthetic single crystal diamond without flattening the seed substrate for which the flattening is not necessary based on the determination.

Abstract: A method of disordering a layer of an optoelectronic device including; growing a plurality of lower layers; introducing an isoelectronic surfactant; growing a layer; allowing the surfactant to desorb; and growing subsequent layers all performed at a low pressure of 25 torr.

Abstract: A disc-like GaN substrate is a substrate produced by a tiling method and having an angel between the normal line and m-axis on the main surface of the substrate of 0 to 20° inclusive and a diameter of 45 to 55 mm, to 4 or less. In a preferred embodiment, a disc-like GaN substrate has a first main surface and a second main surface that is opposite to the first main surface, and which has an angle between the normal line and m-axis on the first main surface of 0 to 20° inclusive and a diameter of 45 mm or more. The disc-like GaN substrate comprises at least four crystalline regions each being exposed to both of the first main surface and the second main surface, wherein the four crystalline regions are arranged in line along the direction of the orthogonal projection of c-axis on the first main surface.

Abstract: When FZ single crystal silicon is produced from polycrystalline silicon, which is synthesized by the Siemens method followed by being subjected to thermal treatment and includes crystal grains having a Miller index plane <111> or <220> as a principal plane and grown by the thermal treatment, and in which the X-ray diffraction intensity from either of the Miller index planes <111> and <220> after the thermal treatment is 1.5 times or less the X-ray diffraction intensity before the thermal treatment, as raw material, disappearance of crystal lines in the step of forming an FZ single crystal is markedly prevented.

Abstract: Disclosed is a method of growing a zirconia single crystal that has excellent physical properties free from low-temperature degradation and thus enables precise machining, the method including raw material preparation, raw material charging, raw material melting, melt soaking stage, seed production, and single crystal growth.

Abstract: A method for a heat treatment of a silicon single crystal wafer in an oxidizing ambient, including: performing the heat treatment based on a condition determined by a tripartite correlation between a heat treatment temperature during the heat treatment, an oxygen concentration in the silicon single crystal wafer before the heat treatment, and a growth condition of a silicon single crystal from which the silicon single crystal wafer is cut out. This provides a method for a heat treatment of a silicon single crystal wafer which can annihilate void defects or micro oxide precipitate nuclei in a silicon single crystal wafer with low cost, efficiently, and securely by a heat treatment in an oxidizing ambient.

Abstract: Methods of making polycationic nanofibers by grafting cationic polymers onto electrospun neutral nanofibers and polycationic nanofibers produced by the methods are provided herein. In addition, methods of using the polycationic nanofibers to reduce inflammation, to adsorb anionic compounds such as heparin or nucleic acids, to inhibit the growth of microbes or inhibit the formation of a biofilm are also provided. The polycationic nanofibers may be in a mesh and may be included in a medical device, wound dressing, bandage, or as part of a graft.

Abstract: A thread count of a woven textile is proliferated by simultaneous insertion within a single pick insertion event of a loom apparatus multiple adjacent parallel yarns drawn from a multi-pick yarn package. In one or more embodiments, multiple texturized polyester weft yarns of denier between 15 and 65 are wound on a single bobbin in a parallel adjacent fashion such that they may be fed into an air jet pick insertion apparatus and/or a rapier pick insertion apparatus of an air jet loom to weave a textile that has between 90 to 235 ends per inch cotton warp yarns and between 100 and 965 polyester weft yarns.