Abstract: Mixed magnetic powders for making a magnetic core or body is disclosed, wherein the mixed magnetic powders comprises a first magnetic powder and a second magnetic powder, each of the first magnetic powder and the second magnetic powder being made of a soft magnetic material, wherein the average particle diameter of the first magnetic powder is greater than that of the second magnetic powder, and each of the first magnetic powder and the second magnetic powder has a pre-configured particle size distribution for increasing the density of the magnetic body.

Abstract: A high strength cold rolled steel sheet with a low yield ratio has a chemical composition containing C: 0.05% to 0.10%, Si: 0.6% to 1.3%, Mn: 1.4% to 2.2%, P: 0.08% or less, S: 0.010% or less, Al: 0.01% to 0.08%, N: 0.010% or less, and the remainder being Fe and incidental impurities, on a percent by mass basis, and a microstructure in which the average grain size of ferrite is 15 ?m or less, the volume fraction of ferrite is 70% or more, the volume fraction of bainite is 3% or more, the volume fraction of retained austenite is 4% to 7%, the average grain size of martensite is 5 ?m or less, and the volume fraction of martensite is 1% to 6%, wherein the average C concentration (percent by mass) in the retained austenite is 0.30% to 0.70%, yield ratio is 64% or less, and the tensile strength is 590 MPa or more.

Abstract: An aluminum alloy member resistant to cracking and having high strengths and excellent stress corrosion cracking resistance is manufactured by crushing a 7xxx aluminum alloy extrudate. Specifically, a 7xxx aluminum alloy extrudate containing Zn of 3.0-8.0%, Mg of 0.4-2.5%, Cu of 0.05-2.0%, and Ti of 0.005-0.2%, in mass percent, and prepared through press quenching is subjected to a reversion treatment, to crushing within 72 hours after the reversion treatment, and then to aging. The reversion treatment includes heating at a temperature rise rate of 0.4° C./second or more, holding in a temperature range of 200-550° C. for longer than 0 second, and cooling at a rate of 0.5° C./second or more. The ratio of the tensile residual stress ?rs to the 0.2% yield stress ?0.2 after aging and the total content X of Mg and Zn satisfy a condition specified by Expression (1): Y??0.1X+1.4??(1).

Abstract: A process for fabricating a worked product or a monolithic multi-functional structural element comprising aluminium alloy includes a hot working step and at least one transformation step by cold plastic deformation after the hot transformation step. At least two zones of the structural element have imposed generalized average plastic deformations and the imposed deformations are different by at least 2%. Structural elements can be fabricated, particularly for aeronautical construction, with properties that are variable while their geometric characteristics are identical to those of existing components. The process is economic and controllable, and properties can be varied for parts not requiring any artificial ageing.

Abstract: Processes for forming an article from an ?+? titanium alloy are disclosed. The ?+? titanium alloy includes, in weight percentages, from 2.90 to 5.00 aluminum, from 2.00 to 3.00 vanadium, from 0.40 to 2.00 iron, and from 0.10 to 0.30 oxygen. The ?+? titanium alloy is cold worked at a temperature in the range of ambient temperature to 500° F., and then aged at a temperature in the range of 700° F. to 1200° F.

Abstract: A thermally dissipative article and a method of forming a thermally dissipative article are disclosed. The thermally dissipative article includes a component, a porous material formed in a layer on the component. The method of forming a thermally dissipative article includes providing a metal powder mixture and a soluble particulate mixture which forms a porous coating upon sintering and immersion in a solvent to remove the soluble particulate.

Abstract: Disclosed is a method and apparatus for forming a coating layer using a physical vapor deposition apparatus equipped with a sputtering apparatus and an arc ion plating apparatus, comprising: a first coating step of forming a Mo coating layer on a base material using a the sputtering apparatus and a Mo target and Ar gas; a nitrating step of forming a nitride film forming condition using an arc ion plating apparatus and Ar gas and N2 gas; a second coating step of forming a nano composite coating layer of Cr—Mo—N using the Mo target and Ar gas of the sputtering apparatus and the Ar gas, N2 gas and a Cr source of the arc ion plating apparatus at the same time; and a multi-coating step of forming a multi-layer having alternating Cr—Mo—N nano composite coating layers and Mo coating layers by revolving the base material around a central pivot.

Abstract: A method and device for laser-induced marking. The method comprises providing an article having a marking surface including a non-flat area, providing a first laser transfer foil, providing a first laser unit for emitting first laser light, providing a first hard adaptor that is essentially transparent to the first laser light, the first hard adaptor having a contacting surface that essentially is a negative of at least a part of the marking surface of the article, contacting the first laser transfer foil with the marking surface of the article by the first hard adaptor such that the first laser transfer foil is arranged between the marking surface of the article and the contacting surface of the first hard adaptor, and irradiating the first laser light through the first hard adaptor onto the first laser transfer foil.

Abstract: Disclosed are a method for forming a thermal barrier layer for a metallic component, which method involves forming a ceramic coat in which at least in part aluminum oxide and titanium oxide are disposed, the aluminum oxide and the titanium oxide being introduced by infiltration of aluminum-containing and titanium-containing particles or substances or by physical vapor deposition.

Abstract: A Zr-based or Zr—Cu based metallic glass thin film (MGTF) coated on aluminum alloy substrate and a method of fabricating the metallic glass and MGTF coated on aluminum alloy substrate are disclosed. The Zr-based metallic glass thin film-coated aluminum alloy substrate of the present invention comprises: an aluminum alloy substrate; and a Zr-based metallic glass thin film located on the substrate, in which the Zr-based metallic glass is represented by the formula of (ZraCubNicAld)100-xSix, wherein 45=<a=<75, 25=<b=<35, 5=<c=<15, 5=<d=<15, 0.1=<x=<10. The Zr—Cu-based metallic glass thin film coated substrate of the present invention comprises: an aluminum alloy substrate; a Zr—Cu-based metallic glass thin film located on the aluminum alloy substrate, in which the Zr—Cu-based metallic glass is represented by the following formula of (ZreCufAlgAgh)100-ySiy, wherein 35=<e=<55, 35=<f=<55, 5=<g=<15, 5=<h=<15, 0.1=<y=<10.

Abstract: Certain example embodiments relate to methods for low temperature direct graphene growth on glass, and/or associated articles/devices. In certain example embodiments, a glass substrate has a layer including Ni formed thereon. The layer including Ni has a stress pre-engineered through the implantation of He therein. It also may be preconditioned via annealing and/or the like. A remote plasma-assisted chemical vapor deposition technique is used to form graphene both above and below the Ni-inclusive film. The Ni-inclusive film and the top graphene may be removed via tape and/or the like, leaving graphene on the substrate. Optionally, a silicon-inclusive layer may be formed between the Ni-inclusive layer and the substrate. Products including such articles, and/or methods of making the same, also are contemplated.

Abstract: A method for use in a physical vapor deposition coating process includes depositing a ceramic coating material from a plume onto at least one substrate to form a ceramic coating thereon, and during the deposition, rotating the at least one substrate at rotational speed selected with respect to deposition rate of the ceramic coating material onto the at least one substrate.

Abstract: [Problem] To produce a DLC film excellent in hardness and adhesiveness while preventing a film-forming rate from slowing even when the gas pressure in a chamber is a low pressure without requiring a large-scale facility such as a thermostatic device. [solution] There is provided a DLC film film-forming method being a film-forming method to film-form a DLC film on a substrate by a plasma CVD method, the method including: setting a voltage to be applied to a substrate using a DC pulse power supply to a bias voltage; using an acetylene gas or a methane gas as a film-forming gas to be supplied into a chamber; setting the total pressure of the gas in the chamber to not less than 0.5 Pa and not more than 3 Pa when the methane gas is used; setting the total pressure of the gas in the chamber to not less than 0.3 Pa and not more than 3 Pa when the acetylene gas is used; and setting the bias voltage to not less than 0.9 kV and not more than 2.2 kV.

Abstract: Described herein are compositions and methods using same for forming a silicon-containing film such as, without limitation, a carbon doped silicon oxide film, a carbon doped silicon nitride, a carbon doped silicon oxynitride film in a deposition process. In one aspect, the composition comprises at least cyclic carbosilane having at least one Si—C—Si linkage and at least one anchoring group selected from a halide atom, an amino group, and combinations thereof.

Abstract: Vapor deposition processes for forming thin films comprising gold on a substrate in a reaction space are provided. The processes can be cyclical vapor deposition processes, such as atomic layer deposition (ALD) processes. The processes can include contacting the substrate with a gold precursor comprising at least one sulfur donor ligand and at least one alkyl ligand, and contacting the substrate with a second reactant comprising ozone. The deposited thin films comprising gold can be uniform, continuous, and conductive at very low thicknesses.

Abstract: Apparatuses for multi-station semiconductor deposition operations with RF power frequency tuning are disclosed. The RF power frequency may be tuned according to a measured impedance of a plasma during the semiconductor deposition operation. In certain implementations of the apparatuses, a RF power parameter may be adjusted during or prior to the deposition operation. Certain other implementations of the semiconductor deposition operations may include multiple different deposition processes with corresponding different recipes. The recipes may include different RF power parameters for each respective recipe. The respective recipes may adjust the RF power parameter prior to each deposition process. RF power frequency tuning may be utilized during each deposition process.

Abstract: A system for depositing a layer on a substrate includes a processing chamber including a gas inlet, a plurality of gas flow controllers connected in fluid communication with a gas supply source, a gas distribution plate disposed between the plurality of gas flow controllers and the gas inlet, and a gas injection cap connected in fluid communication between the plurality of gas flow controllers and the gas distribution plate. The gas distribution plate defines a plurality of holes, and the gas injection cap defines a plurality of gas flow passages, each extending from an inlet connected to one of the gas flow controllers to an outlet connected in fluid communication with at least one of the holes in the gas distribution plate. Each of the gas flow controllers is disposed proximate to the gas injection cap.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a lower chamber having an opened upper side, an upper chamber opening or closing the upper side of the lower chamber, the upper chamber defining an inner space, in which a process is performed on a substrate, together with the lower chamber, a showerhead disposed on a lower portion of the upper chamber to supply a reaction gas toward the inner space, wherein a buffer space is defined between the showerhead and the upper chamber, a partition member disposed in the buffer space to partition the buffer space into a plurality of diffusion regions, and a plurality of gas supply ports disposed in the upper chamber to supply the reaction gas toward each of the diffusion regions.

Abstract: A wafer carrier for use in a chemical vapor deposition (CVD) system includes a plurality of wafer retention pockets, each having a peripheral wall surface surrounding a floor surface and defining a periphery of that wafer retention pocket. Each wafer retention pocket has a periphery with a shape defined by at least a first arc having a first radius of curvature situated around a first arc center and a second arc having a second radius of curvature situated around a second arc center. The second arc is different from the first arc, either by its radius of curvature, arc center, or both.

Abstract: Provided is a film forming apparatus including a placement stage; a processing container that defines a processing chamber which accommodates the placement stage and includes a first region and a second region; a gas supply section that supplies a precursor gas to the first region; and a plasma generation section that generates plasma of a reactive gas in the second region. The plasma generation section includes: at least one waveguide that defines a wave guiding path above the placement stage and above the second region, a microwave generator connected to the at least one waveguide, and a plurality of protrusions made of a dielectric material. The protrusions pass through a plurality of openings formed in a lower conductive part of the at least one waveguide to extend into the second region. The protrusions are arranged in a radial direction with respect an axis of the placement stage.

Abstract: A method of and apparatus for producing electricity, hydrogen gas, oxygen gas, pure water using a geothermal heat are disclosed. A low voltage (such as less than 0.9V) is applied to a prepared solution containing hydrogen generating catalysts to generate hydrogen and oxygen. The hydrogen and oxygen are used to drive a gas turbine to generate electricity. The oxygen and hydrogen are combusted to generate heat and pure water. This process is advantageous in many aspects including desalinating salt/sea water using geothermal heat.

Abstract: Reactor/separator elements for performing the generation and/or separation of hydrogen gas with improved efficiency have a central core and a separation layer that, in combination, define at least one spiral gas flow channel extending from one end of the central core to the opposite end of the central core. In use, the reactor/separator element may be placed in a housing which constrains gas on the outside of the reactor/separator element into the spiral channel defined by the outside of the separation layer.

Abstract: An efficient electrolysis system for sodium chlorate production may include round or oval cells, reactors, a product pump transfer, a buffer tank, a circulation pump, and explosive clad plate, all of which are connected by way of pipelines. Inlet and the outlet of each cell are separately connected with the reactor via titanium pipes, allowing the electrolyte to recirculate naturally between the cells and the reactors. The outlet of every cell is conical while each reactor includes a standard electrolytic unit with three to eight cells. The electrolytic units are modularly identical and symmetrically linked to the buffer tank. Within each unit, adjacent cells are connected with the explosive clad plates. The buffer tank may be divided into two parts—part A and part B—with part A connecting with the overflow port of the reactor via pipeline, and the part B connecting with the reactor via the circulation pump.

Abstract: A method for the operation of an SOEC stack reactor ( Solid Oxide Electrolyser Cell), according to which, in the absence of electricity, synthesis gas H2+CO or a mixture H2+CO2 is injected at the cathode inlet of the reactor in such a way as to produce methane inside the reactor. Since the catalytic methanation reaction is exothermic, the stack reactor can therefore be held at temperature, without loss of fuel. The fuel used for the methanation (synthesis gas or hydrogen) can advantageously be that which has been previously produced during the operating phases with available electricity.

Abstract: Methods, equipment, and reagents for preparing organic compounds using custom electrolytes based on different ionic liquids in electrolytic decarboxylation reactions are disclosed.

Abstract: A method for upgrading bio-mass material is provided. The method involves electrolytic reduction of the material in an electrochemical cell having a ceramic, oxygen-ion conducting membrane, where the membrane includes an electrolyte. One or more oxygenated or partially-oxygenated compounds are reduced by applying an electrical potential to the electrochemical cell. A system for upgrading bio-mass material is also disclosed.

Abstract: An apparatus for processing materials at high temperatures comprises a high strength enclosure; a plurality of high strength radial segments disposed adjacent to and radially inward from the high strength enclosure; a liner disposed adjacent to and radially inward from the radical segments; a chamber defined interior to the liner; a heating device disposed within the chamber; and a capsule disposed within the chamber, the capsule configured to hold a supercritical fluid. The apparatus may be used for growing crystals, e.g., GaN, under high temperature and pressure conditions.

Abstract: A crystal growth apparatus includes: a raw material supplying part that mixes raw materials including a group III element metal and an alkali metal; a growing part disposed at a stage under the raw material supplying part, the growing part having a seed substrate; a tilting mechanism that tilts the raw material supplying part and the growing part; a heater that heats the raw material supplying part and the growing part; a control part that controls an operation of the tilting mechanism; and a supply port that supplies a nitrogen element-containing substance to the growing part, wherein the raw material supplying part having an opening facing to the growing part, the opening being disposed at a bottom portion and one edge portion of the raw material supplying part, and the control part controls the tilting mechanism so as to tilt the raw material supplying part toward the other edge portion on the side opposite to the one edge portion so as to prevent the raw materials from entering the opening when the raw ma

Abstract: Production of silicon ingots in a crystal puller that involve reduction in the formation of silicon deposits on the puller exhaust system are disclosed.

Abstract: The present disclosure relates to an apparatus for growing an ingot from silicon melt contained in a crucible by using a seed crystal, the apparatus comprising a chamber including a lower portion for accommodating the crucible and an upper portion through which the growing ingot passes, and a cooling rate control unit which is disposed at the upper portion of the chamber to extend to the lower portion of the chamber and has a hole through which the growing ingot passes, wherein the cooling rate control unit comprises an insulation part for insulating the ingot, a cooling part disposed over the insulation part to cool the ingot, and a blocking part disposed between the insulation part and the cooling part to prevent heat exchange therebetween.

Abstract: Provided is a method for producing a SiC single crystal which can suppress generation of SiC polycrystals. The method according to the present embodiment is in accordance with a solution growth method. The method for producing a SiC single crystal according to the present embodiment comprises a power-output increasing step, a contact step, and a growth step. In the power-output increasing step, high-frequency power output of an induction heating device is increased to crystal-growth high-frequency power output. In the contact step, a SiC seed crystal is brought into contact with a Si—C solution. The high-frequency power output of the induction heating device in the contact step is more than 80% of the crystal-growth high-frequency power output. The temperature of the Si—C solution in the contact step is less than a crystal growth temperature. In the growth step, the SiC single crystal is grown at the crystal growth temperature.

Abstract: Methods for large-scale manufacturing of semipolar gallium nitride boules are disclosed. The disclosed methods comprise suspending large-area single crystal seed plates in a rack, placing the rack in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and growing crystals ammonothermally. A bi-faceted growth morphology may be maintained to facilitate fabrication of large area semipolar wafers without growing thick boules.

Abstract: The present disclosure is directed to a fiber that is composed of a polymeric blend including (i) 95 wt % to 99 wt % of a high density ethylene-based polymer having a Mw/Mn from 2.0 to 3.0 and (ii) from 5 wt % to 1 wt % of a low density ethylene-based polymer having a melt index from 5 g/10 min to 15 g/10 min. The fiber has a density from 1 denier to 2 denier and a 3% secant modulus from 8.5 g/denier to 20 g/denier.

Abstract: Disclosed is a continuous carbon fiber/thermoplastic resin fiber composite yarn and a method for manufacturing the same, wherein the carbon fiber composite yarn provides excellent mechanical properties, is light in weight, moldable, and has excellent impregnating ability. In particular, the composite yarn is provided with these superior properties by including a continuous carbon fiber having excellent mechanical properties, a thermoplastic resin fiber, and the like, and by using a false twist processing machine or a solution bath, and the like in order to manufacture the composite yarn.

Abstract: A graphene fiber and a preparation method thereof, where the graphene fiber is a composite fiber of metal nanowire doped graphene fiber, and principal components of the composite fiber are graphene and metal nanowires, a mass ratio of metal nanowires is 0.1%-50%, the graphene is in a form of sheet, and both the metal nanowires and graphene sheets are arranged in parallel along an axial direction of the graphene fiber. The metal nanowire doped graphene fiber is a new type of a high performance multi-functional fiber material, which achieves a significant improvement in electrical conductivity of graphene fibers through doping of metal nanowires and meanwhile demonstrates excellent tensile strength and toughness. The metal nanowire doped graphene fiber has great potential application value in a plurality of fields, for example, it is used as a lightweight flexible wire.

Abstract: A method is provided for producing unidirectional carbon fiber cloth by providing a plurality of precursors, wherein each precursor has a plurality of individual filaments, carbonizing the plurality of precursors into a plurality of carbon fiber bundles, subsequently producing a unidirectional carbon fiber cloth from the plurality of carbon fiber bundles, and subsequently winding the unidirectional carbon fiber cloth produced. A device is provided for producing a unidirectional carbon fiber cloth having at least one heat treatment unit for carbonizing a plurality of precursors into a plurality of carbon fiber bundles, a connecting arrangement for producing the unidirectional carbon fiber cloth from the carbon fiber bundles created, and a back beam for winding the unidirectional carbon fiber cloth onto the back beam.

Abstract: A card clothing wire (1) for use on drums in cards has a root (2) and a blade (3) having an overall height of the wire (h1) of 1.5 mm to 5 mm. The blade (3) is provided with teeth (4) having a tooth depth (h6) of 0.35 mm to 1.0 mm, and having a tooth pitch (p) of 1.5 mm to 3 mm. The teeth (4) have a tip surface (7), a back surface (8) having a back angle (?), and a tooth face surface. The back angle (?) is 40° to 20° and each tooth (4) has a first tip (5) and a second tip (6) and the tip surface (7) has at least one elevation (9).

Abstract: The cross lapper for forming a nonwoven fabric from a fiber web includes in its infeed area a smooth cover belt or an array of linear elements spaced a certain distance apart and arranged parallel to each other to cover the fiber web being carried along on the upper run of a first web conveyor belt. The first end section of the cover belt or of the array of linear elements is connected to the upper carriage of the cross lapper. During operation of the cross lapper the fiber web moves along the bottom surface of a cover section of the cover belt or of the array of linear elements. The cross lapper comprises a compensating mechanism to compensate for the changes in the length of the cover section which occur as the upper carriage moves transversely back and forth.

Abstract: A cleaning head of a cleaning device for cleaning a spinning rotor, by means of a feed device, be fed into a predetermined cleaning position in the interior of the spinning rotor. The cleaning head has a cleaning element formed as a scraper element arranged in such a manner that, in the predetermined cleaning position of the cleaning head, it is fed to the open edge of the spinning rotor. A cleaning device for cleaning a spinning rotor features a corresponding cleaning head. With a method for cleaning a spinning rotor by means of the cleaning device, after feed of the cleaning head into the cleaning position, the open edge of the spinning rotor is cleaned by means of the scraper element.

Abstract: The present invention relates to a dipping material composition for cord fabric which is free of resorcinol and formaldehyde and production methods thereof comprising the steps of adding an acrylic resin containing a carboxylic acid group, adjusting pH value, adding an epoxy resin, adding a blocked polyisocyanate, adding a styrene butadiene latex and adding a styrene butadiene vinylpyridine latex into water, obtaining the dipping material, enabling the synthetic fiber and the rubber used in cord fabric reinforced rubber materials production to be attached to each other by providing an interface between the two said materials. Since the composition is formaldehyde-free, it is not as hazardous for human health as resorcinol-formaldehyde-latex (RFL) based systems and it is also environmentally friendly.

Abstract: Fabrics which allow for light transmission and provide thermal insulation are described. A fabric is formed from at least one yarn to form a continuous web of fabric. The continuous web is configured to allow between 20% and 65% of incident light to be transmitted through the fabric, and to reduce heat transfer through the fabric such that the fabric has an R value of at least 0.75 K·m2/W. The continuous web of fabric may be a woven fabric where the at least one yarn is woven to form the woven fabric.

Abstract: A fabric-based item may have fabric with conductive strands of material. The conductive strands of material may include conductive yarn formed from insulating fibers and conductive fibers. The conductive fibers may be metal wires. The insulating fibers in the conductive yarn may hide the conductive fibers from view. The fabric may be woven fabric or other fabric with intertwined strands of material. The woven fabric may include conductive and insulating warp yarns and conductive and insulating weft yarns. Conductive yarn may be coupled to capacitive touch sensor circuitry and may form a capacitive touch sensor grid or other capacitive touch sensor electrode structures. Conductive yarn may also be soldered or otherwise coupled to electrical components.

Abstract: A multi-carrier, zonal weaving system and method of manufacturing a zonal woven material is provided. The multi-carrier system includes a first weft yarn, a second weft yarn, and one or more intermediate warp yarns for wrapping by the first and second weft yarns. The zonal weaving method includes receiving a first weft yarn from a first origin via a first shed, wrapping it around one or more zonal warp yarns, and returned to the first weft origin after the first shed upper and lower yarns are exchanged. In further aspects, a second weft yarn is received from a second weft origin via a second shed, wrapped around the same intermediate, zonal warp yarns, and returned to the second weft origin after exchange of the second shed yarns. In one aspect, the first and second weft yarns are interlocked during wrapping of the common warp yarns.

Abstract: A woven fabric which enables protection of optical fiber yarns while the woven fabric is processed into a design woven fabric and easy exposure of the optical fiber yarns when the protection thereof becomes unnecessary, a method for manufacturing a design woven fabric from this woven fabric, and a method for manufacturing an interior material including: A woven fabric having a first constituent yarn having an optical fiber yarn and a non-light guiding yarn and a second constituent yarn having a non-light guiding yarn. The woven fabric having a first region in which the first and second constituent yarns are woven in one layer and a second region which is positioned adjacent to the first region and in which the first and second constituent yarns and are woven in two or more separable layers. The woven fabric has an optical fiber layer and a back protecting layer as the separable layers. The optical fiber layer is a layer formed of the optical fiber yarns.

Abstract: A fiber blank woven as a single piece by three-dimensional weaving to make a closed box-structure platform out of composite material for a turbine engine fan. In each plane of the fiber blank, a set of warp yarns interlinks layers of weft yarns in first, second, and third portions of the fiber blank, while leaving a closed non-interlinked zone separating the first and second portions over a fraction of the dimension of the fiber blank in the warp direction between an upstream non-interlinking limit and a downstream non-interlinking limit, and while leaving at least one open non-interlinked zone separating the second and third portions over a fraction of the dimension of the fiber blank in the warp direction from a non-interlinking limit to a downstream edge of the fiber blank. A method of fabricating a preform for the closed box-structure platform can use such a fiber blank.

Abstract: A knit fabric suitable as a reinforcement for tubular elastomeric articles or a fiber-reinforced composite structure wherein (i) the fabric comprises a plurality of first filamentary yarns (first yarns) having a tenacity of 2.5-56 g/dtex and a linear density of 222-10000 dtex that form the loops of the knit of the fabric, (ii) the fabric further comprises at least one second filamentary yarn having a tenacity of 2.5-56 g/dtex and a linear density of 222-10000 dtex that, within a course of the fabric, passes in a helical direction in front of all first yarns in that course and is intertwined with at least some of the first yarns in an adjacent course, and (iii) within a course of the fabric, the length of second reinforcement yarn to the length of first yarn is in the ratio of from 1.0:1.72 to 1.0:6.0.

Abstract: A method for knitting a shoe upper capable of forming a new stretch preventing section different from a conventional stretch preventing section, and a shoe upper obtained through such knitting method are provided. The shoe upper including a base knitted fabric portion (1F) that covers a foot of a wearer is knitted. In the knitting, a stretch preventing section (20) configured by a knitted fabric of a plain structure is knitted, where one end in a wale direction is connected to the base knitted fabric portion (1F) and another end in the wale direction is not connected to the base knitted fabric portion (1F). The stretch preventing section (20) in which one end is fixed and the other end is not fixed is curled to a tubular shape. The curled stretch preventing section (20) is thicker than the other portions, thus suppressing the stretch of the shoe upper.

Abstract: An upper-torso garment includes a first knit zone and a second knit zone. The first knit zone includes a first tubular-jacquard knit structure and having a first modulus of elasticity, and the second knit zone includes a second tubular-jacquard knit structure and having a second modulus of elasticity, which is greater than the first modulus of elasticity.

Abstract: The method for manufacturing tubular knitted articles (M) comprises the steps of: a) knitting a tubular knitted article (M) with the needle cylinder (3); b) transferring loops (MA) of a last-formed course of loops from the needles (5) of the needle cylinder (3) onto the pick-up members (27A, 27B) of a transfer unit (21), divided into two circular half-rings (25A, 25B, 27A, 27B) which can be overturned over each other; c) overturning one of the circular half-rings (25A, 25B, 27A, 27B) of pick-up members (27B) onto the other so as to arrange two edge portions of the final edge of the tubular knitted article (M) one onto the other; d) joining the two edge portions to one another by means of joining stitches (A, B, C, D) formed in intermediate spaces between adjacent pick-up members (27A), whereon the knitted tubular article (M) is retained; e) unloading the knitted tubular article (M) with the closed toe from the transfer unit (21).

Abstract: Described are bags having a sack-like body formed of knitwear. The knitwear includes a first layer and a second layer, wherein the first layer at least partly overlaps the second layer, and wherein the first layer and the second layer are knitted integrally in a one-piece knitting process.