Patents Issued in January 7, 2020
  • Patent number: 10526676
    Abstract: Provided are a high-strength steel sheet, which is suitable as a material of automotive parts, and a method for producing the high-strength steel sheet. In the high-strength steel sheet, the C content is 0.15% or less, the area ratio of ferrite is 8% to 45%, the area ratio of martensite is 55% to 85%, the proportion of martensite grains adjacent to only ferrite grains in the entire microstructure is 15% or less, the average crystal grain sizes of ferrite and martensite are each 10 ?m or less, and the area ratio of ferrite grains having a size of 10 ?m or more to all the ferrite grains included in a portion of the steel sheet which extends from 20 to 100 ?m below the surface thereof is less than 5%.
    Type: Grant
    Filed: November 27, 2014
    Date of Patent: January 7, 2020
    Assignee: JFE STEEL CORPORATION
    Inventors: Hiroshi Hasegawa, Shinjiro Kaneko, Yoichi Makimizu, Yoshitsugu Suzuki
  • Patent number: 10526677
    Abstract: A heat treatment furnace and a method for heat treatment of a steel sheet blank is disclosed having at least one furnace chamber and a transport system for conveying the steel sheet blanks through the furnace chamber. A preheating chamber, a metallurgical bonding path and a cooling chamber, wherein the steel sheet blank can be heated in the preheating chamber to a temperature of above 200° C. A method for the production of a hot-formed and press-quenched motor-vehicle part is also disclosed.
    Type: Grant
    Filed: December 20, 2016
    Date of Patent: January 7, 2020
    Assignee: BENTELER AUTOMOBILTECHNIK GMBH
    Inventors: Georg Frost, Markus Kettler, Karsten Bake
  • Patent number: 10526678
    Abstract: This disclosure provides a predetermined composition, where a conversion value C* of total carbon contents in Ti, Nb and V precipitates whose grain sizes are less than 20 nm is 0.010 mass % to 0.100 mass %, Fe content in Fe precipitates is 0.03 mass % to 0.50 mass %, and an average grain size of ferrite grains whose grain sizes are top 5 % large in ferrite grain size distribution of rolling direction cross section is (4000/TS)2 ?m or less, the TS indicating tensile strength in unit of MPa.
    Type: Grant
    Filed: July 5, 2016
    Date of Patent: January 7, 2020
    Assignee: JFE STEEL CORPORATION
    Inventors: Taro Kizu, Shunsuke Toyoda, Akimasa Kido, Tetsushi Tadani
  • Patent number: 10526679
    Abstract: There is provided a hot-dip galvanized steel sheet and a hot-dip galvannealed steel sheet, which have excellent elongation properties, and methods for manufacturing the hot-dip galvanized steel sheet and the hot-dip galvannealed steel sheet. The present disclosure relates to a hot-dip galvanized steel sheet in which a hot-dip galvanized layer is formed on a surface of abase steel sheet, the hot-dip galvanized steel sheet having excellent elongation properties and being characterized by the composition and the microstructure thereof.
    Type: Grant
    Filed: June 14, 2017
    Date of Patent: January 7, 2020
    Assignee: POSCO
    Inventors: Sang Ho Han, Seong Ho Han
  • Patent number: 10526680
    Abstract: A method for manufacturing a strip having a variable thickness along its length, comprising the steps: an initial strip of constant thickness is provided; homogeneous cold rolling of the initial strip along its length in order to obtain an intermediate strip of constant thickness along the rolling direction; flexible cold rolling of the intermediate strip along its length in order to obtain a variable thickness strip, having, along its length, first areas with a first thickness (e+s) and second areas with a second thickness (e), less than the first thickness (e+s), continuous annealing of the strip. The plastic deformation ratio generated, after an optional intermediate recrystallization annealing, by the homogeneous cold rolling and the flexible cold rolling steps in the first areas is greater than or equal to 30%.
    Type: Grant
    Filed: January 17, 2014
    Date of Patent: January 7, 2020
    Assignee: APERAM
    Inventors: Roland Panier, Pierre-Louis Reydet, Nicolas Laurain
  • Patent number: 10526681
    Abstract: A system and method for improving leach kinetics and recovery during above-atmospheric leaching of a metal sulfide is disclosed. In some embodiments, the method may comprise the steps of: (a) producing a metal sulfide concentrate [34] via flotation; (b) moving the produced metal sulfide concentrate [34] to at least one chamber [22a] of at least one reactor such as an autoclave [20]; (c) leaching the produced metal sulfide concentrate in said at least one chamber [22a] in the presence of oxygen [82] at a pressure and/or temperature above ambient, and in the presence of partially-used [25] and/or or new [92] grinding media within the at least one chamber [22a]. Systems [10] and apparatus [20, 200] for practicing the aforementioned method are also disclosed.
    Type: Grant
    Filed: December 16, 2015
    Date of Patent: January 7, 2020
    Assignee: FLSMIDTH A/S
    Inventors: David J. Chaiko, Carlos Eyzaguirre
  • Patent number: 10526682
    Abstract: Materials and methods for precious metal recovery are disclosed. Usable leaching solutions are preferably aqueous based and include appropriate materials in sufficient quantities to solubilize and stabilize precious metal. Such materials typically include oxidant material. Some or all of the oxidant material can be, in some instances, generated in-situ. The leaching solution is typically contacted with a substrate having a target precious metal, thereby solubilizing precious metal to form a stable, pregnant solution. The precious metal can then be recovered from the pregnant solution. In some instances, components of the leaching solution can be regenerated and reused in subsequent leaching.
    Type: Grant
    Filed: June 1, 2018
    Date of Patent: January 7, 2020
    Assignee: Enviroleach Technologies Inc.
    Inventors: Duane Nelson, Mohammad Doostmohammadi, Hanif Jafari, Ishwinder Singh Grewal
  • Patent number: 10526683
    Abstract: The present invention relates to a process for the selective and ecoefficient recovery of lead and silver jointly as a concentrate product from hydrometallurgical residues.
    Type: Grant
    Filed: September 26, 2014
    Date of Patent: January 7, 2020
    Assignee: Ténicas Reunidas, S.A.
    Inventors: Carlos Alvarez Carreño, Maite Pinedo González, Emilio Pecharromán Mercado, Nuria Ocaña García, Maria Frades Tapia
  • Patent number: 10526684
    Abstract: A novel process for treating and recovering valuable metals and other components from pickling acid residue (PAR) has been developed. The metals and other components are recovered by neutralizing the pickling acid residue using a magnesium compound or a mixture of magnesium compounds, and separating components of the resulting mixture (metals and sulfates) into products that can be reused, such as magnesium sulfate, nickel sulfate, iron and chromium phosphate, or various metal hydroxides or oxides.
    Type: Grant
    Filed: October 17, 2018
    Date of Patent: January 7, 2020
    Assignee: CrisolteQ Ltd
    Inventors: Kenneth Ekman, Peik Ekman, Elina Lappalainen, Jan-Peter Blomquist
  • Patent number: 10526685
    Abstract: A method of leaching chalcopyrite ores includes the steps of forming agglomerates of fragments of chalcopyrite ores and silver and leaching the agglomerates with suitable leach liquor.
    Type: Grant
    Filed: October 8, 2018
    Date of Patent: January 7, 2020
    Assignee: Technological Resources Pty. Limited
    Inventors: Paul Leslie Brown, Ralph Peter Hackl, Stephen Charles Grocott
  • Patent number: 10526686
    Abstract: Low-oxygen clean steel is provided containing C, Si, Mn, P, and S as chemical components, and further containing, by mass %, 0.005% to 0.20% of Al, greater than 0% to 0.0005% of Ca, 0.00005% to 0.0004% of REM, and greater than 0% to 0.003% of T.O, wherein the REM content, the Ca content, and the T.O content satisfy 0.15?REM/Ca?4.00 and Ca/T.O?0.50, nonmetallic inclusions which have a maximum predicted diameter of 1 ?m to 30 ?m measured using an extreme value statistical method under the condition in which a prediction area is 30,000 mm2, and contain Al2O3 and REM oxide are dispersed in the steel, an average proportion of the Al2O3 in the nonmetallic inclusions is greater than 50%, the REM is one or two or more of rare-earth elements La, Ce, Pr, and Nd, and the steel is Al-deoxidized steel or Al—Si-deoxidized steel.
    Type: Grant
    Filed: April 24, 2014
    Date of Patent: January 7, 2020
    Assignee: NIPPON STEEL CORPORATION
    Inventors: Michimasa Aono, Kenichiro Miyamoto, Masanobu Suzuki
  • Patent number: 10526687
    Abstract: Provided is an ultra-high-strength steel sheet having a component composition that includes specific amounts of each of C, Mn, and Al and a remainder of iron and unavoidable impurities, and in which the amounts of each of P, S, and N among the unavoidable impurities are limited to a specific amount. The ultra-high-strength steel sheet includes 2 area% or more of a region having a structure that includes 90% or more of martensite and 0.5% or more of residual austentite by area ratio relative to the entire structure, the local Mn concentration in said region being at least 1.1 times that of the Mn content of the entire steel sheet. The ultra-high-strength steel sheet has a tensile strength of 1470 MPa or more.
    Type: Grant
    Filed: February 8, 2016
    Date of Patent: January 7, 2020
    Assignee: KOBE STEEL, LTD.
    Inventors: Kosuke Shibata, Toshiya Nakata, Toshio Murakami, Takahiro Ozawa, Fumio Yuse, Atsuhiro Shiraki, Kenji Saito, Yukihiro Utsumi
  • Patent number: 10526688
    Abstract: There is provided a Ni-based intermetallic alloy having a dual multi-phase microstructure containing a primary precipitate L12 phase and an (L12+D022) eutectoid microstructure. Thus, the Ni-based intermetallic alloy contains Ni, Al, and V as basic elements, and the contents of Ni, Al, and V are controlled to form the dual multi-phase microstructure. The Ni-based intermetallic alloy further contains at least one of Zr and Hf in addition to the basic elements.
    Type: Grant
    Filed: February 22, 2018
    Date of Patent: January 7, 2020
    Assignees: HONDA MOTOR CO., LTD., OSAKA PREFECTURE UNIVERSITY PUBLIC CORPORATION
    Inventors: Kazuki Nagao, Yusuke Kikuchi, Masahiro Hayashi, Takayuki Takasugi, Yasuyuki Kaneno
  • Patent number: 10526689
    Abstract: The present invention relates to a heat-resistant Ti alloy having excellent high-temperature strength and a process for producing the same. More particularly, the present invention relates to a heat-resistant Ti alloy having a composite structure having an equiaxed ? phase and ? grains containing an acicular ? phase inside thereof, and a process for producing the same.
    Type: Grant
    Filed: December 8, 2017
    Date of Patent: January 7, 2020
    Assignee: DAIDO STEEL CO., LTD.
    Inventors: Yoshihiko Koyanagi, Takuma Okajima
  • Patent number: 10526690
    Abstract: A high-strength hot-dip galvanized steel sheet that is a steel sheet that includes major components and that contains at least 40 vol. % the sum of bainite and martensite, 8-60 vol. % retained austenite, and less than 40 vol. % ferrite, with the remainder comprising an incidental structure. The hot-dip galvanized steel sheet has, at the interface between the deposit layer formed by hot-dip galvanization and the base steel sheet, an intermetallic compound constituted of Fe, Al, Zn, and incidental impurities and having an average thickness of 0.1-2 ?m, the intermetallic compound having a crystal grain diameter of 0.01-1 ?m. After the deposit layer formed by hot-dip galvanization was removed, the surface of the base steel sheet has an arithmetic average roughness Ra of 0.1-2.0 ?m and gives a roughness curve in which the contour elements have an average length RSm of 5-300 ?m.
    Type: Grant
    Filed: September 28, 2012
    Date of Patent: January 7, 2020
    Assignee: NIPPON STEEL CORPORATION
    Inventors: Shintaro Yamanaka, Soshi Fujita, Koichi Sato
  • Patent number: 10526691
    Abstract: Provided is a nitrided metal surface functionalized with molecules, each molecule comprising at least one binding group and an antimicrobial moiety. The molecules are immobilized on the surface by only covalent interactions between the binding groups of the molecules and nitrogen atoms within the nitrided metal surface. Articles comprising the functionalized nitrided surface find use in inhibiting or reducing the growth of microorganisms on surfaces that are frequently touched. A method for preparing the functionalized nitrided surface comprises contacting a nitrided metal surface with molecules so as to form covalent bonds between the binding groups of the molecules and the nitrogen atoms in the surface, thereby immobilising the molecules on the metal surface.
    Type: Grant
    Filed: July 11, 2016
    Date of Patent: January 7, 2020
    Assignee: The University of Birmingham
    Inventor: Felicity Jane de Cogan
  • Patent number: 10526692
    Abstract: Coated articles include two or more functional infrared (IR) reflecting layers optionally sandwiched between at least dielectric layers. The dielectric layers may be of or including silicon nitride or the like. At least one of the IR reflecting layers is of or including zirconium nitride (e.g., ZrN) and at least another of the IR reflecting layers is of or including indium-tin-oxide (ITO).
    Type: Grant
    Filed: July 18, 2019
    Date of Patent: January 7, 2020
    Assignee: GUARDIAN GLASS, LLC
    Inventors: Yiwei Lu, Guowen Ding, Cesar Clavero, Daniel Schweigert, Guizhen Zhang, Scott Jewhurst, Daniel Lee
  • Patent number: 10526693
    Abstract: A conductive laminate for a touch panel including a substrate which is light-transmitting, an underlayer which is light-transmitting and formed on at least one surface of the substrate, a first copper oxynitride layer formed on the underlayer on an opposite side of the substrate, a copper layer formed on the first copper oxynitride layer on an opposite side of the underlayer, and a second copper oxynitride layer formed on the copper layer on an opposite side of the first copper oxynitride layer.
    Type: Grant
    Filed: August 25, 2017
    Date of Patent: January 7, 2020
    Assignee: VTS-TOUCHSENSOR CO., LTD.
    Inventors: Tomo Yoshinari, Arifumi Hashimoto
  • Patent number: 10526694
    Abstract: A method of preparing an ultra-flat metal surface involves providing a layer of a crystalline metallic material on an ultra-flat substrate surface that is relatively harder than the metallic material layer and then impinging the metallic material layer with incoming metal atoms that are deposited as an additive crystalline layer thereon, wherein at least a lattice constant of the additive crystalline layer is different enough from a lattice constant of the crystalline metallic material layer resulting in a reduction of roughness of the surface of the metallic material layer adjacent to the substrate surface. The metallic material layer having an ultra-flat surface then is separated by template stripping or other technique from the substrate surface for further use of the ultra-flat surface.
    Type: Grant
    Filed: April 26, 2016
    Date of Patent: January 7, 2020
    Assignee: Iowa State University Research Foundation, Inc.
    Inventors: Martin Thuo, Jiahao Chen, Ian D. Tevis
  • Patent number: 10526695
    Abstract: A sputter unit is introduced comprising a housing, a gas inlet, an interface for removable connecting the sputter unit to a vacuum chamber, a gas outlet arranged for supplying a process gas received via the gas inlet to the vacuum chamber, an interface for removable connecting the sputter unit to a base unit comprising a vacuum pump for generating a vacuum in the vacuum chamber, and a transformer arranged in the housing for increasing a supply voltage into an ionisation voltage for ionising the process gas supplied via the gas outlet to the vacuum chamber.
    Type: Grant
    Filed: May 6, 2016
    Date of Patent: January 7, 2020
    Assignee: safematic GmbH
    Inventors: Walter Colleoni, Patrick Capeder, Christof Graf
  • Patent number: 10526696
    Abstract: A molecular sensor includes a substrate defining a substrate plane, and a plurality of pairs of electrode sheets above or below the substrate at an angle to the substrate plane. The molecular sensor further includes a plurality of inner dielectric sheets between each electrode sheet in each pair of electrode sheets of the plurality of pairs, and an outer dielectric sheet between each pair of electrode sheets of the plurality of pairs.
    Type: Grant
    Filed: January 17, 2019
    Date of Patent: January 7, 2020
    Assignee: ROSWELL BIOTECHNOLOGIES, INC.
    Inventors: Sungho Jin, Barry L. Merriman, Tim Geiser, Chulmin Choi, Paul Mola
  • Patent number: 10526697
    Abstract: A solid source material is described for forming a tungsten-containing film. The solid source material is tungsten hexacarbonyl, wherein content of molybdenum is less than 1000 ppm. Such solid source material may be formed by a process including provision of particulate tungsten hexacarbonyl raw material of particles of size less than 5 mm, wherein particles of size greater than 1.4 mm are less than 15% of the particles, and wherein content of molybdenum is less than 1000 ppm, and sintering the particulate tungsten hexacarbonyl raw material at temperature below 100° C. to produce the solid source material as a sintered solid.
    Type: Grant
    Filed: February 28, 2016
    Date of Patent: January 7, 2020
    Assignee: ENTEGRIS, INC.
    Inventors: Thomas H. Baum, Robert L. Wright, Jr., Scott L. Battle, John M. Cleary
  • Patent number: 10526698
    Abstract: The present invention relates to a chemical deposition raw material including a heterogeneous polynuclear complex in which a cyclopentadienyl and a carbonyl are coordinated to a first transition metal and a second transition metal as central metals, the chemical deposition raw material being represented by the following formula. In the following formula, the first transition metal (M1) and the second transition metal (M2) are mutually different. The number of cyclopentadienyls (L) is 1 or more and 2 or less, and to the cyclopentadienyl is coordinated one of a hydrogen atom and an alkyl group with a carbon number of 1 or more and 5 or less as each of substituents R1 to R5. With the chemical deposition raw material of the present invention, a composite metal thin film or a composite metal compound thin film containing plural metals can be formed from a single raw material.
    Type: Grant
    Filed: February 15, 2019
    Date of Patent: January 7, 2020
    Assignee: TANAKA KIKINZOKU K.K.
    Inventors: Ryosuke Harada, Toshiyuki Shigetomi, Shunichi Nabeya, Kazuharu Suzuki, Akiko Kumakura, Tatsutaka Aoyama, Takayuki Sone
  • Patent number: 10526699
    Abstract: A silicon carbide epitaxial film has a plurality of arc-shaped or annular basal plane dislocations and a plurality of threading dislocations. The plurality of threading dislocations have a first threading dislocation which is surrounded by the plurality of basal plane dislocations and a second threading dislocation which is not surrounded by the plurality of basal plane dislocations, when viewed from a direction perpendicular to a main surface. The plurality of basal plane dislocations and the first threading dislocation constitute an annular defect. An area density of the plurality of threading dislocations in the main surface is more than or equal to 50 cm?2. A value obtained by dividing an area density of the annular defect when viewed from the direction perpendicular to the main surface by the area density of the plurality of threading dislocations in the main surface is more than or equal to 0.00002 and less than or equal to 0.004.
    Type: Grant
    Filed: July 20, 2018
    Date of Patent: January 7, 2020
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Kenji Kanbara, Takaya Miyase, Tsubasa Honke
  • Patent number: 10526700
    Abstract: The present inventors have conceived of a multi-stage process gas delivery system for use in a substrate processing apparatus. In certain implementations, a first process gas may first be delivered to a substrate in a substrate processing chamber. A second process gas may be delivered, at a later time, to the substrate to aid in the even dosing of the substrate. Delivery of the first process gas and the second process gas may cease at the same time or may cease at separate times.
    Type: Grant
    Filed: September 13, 2018
    Date of Patent: January 7, 2020
    Assignee: Lam Research Corporation
    Inventors: Purushottam Kumar, Hu Kang, Adrien LaVoie, Yi Chung Chiu, Frank L. Pasquale, Jun Qian, Chloe Baldasseroni, Shankar Swaminathan, Karl F. Leeser, David Charles Smith, Wei-Chih Lai
  • Patent number: 10526701
    Abstract: Methods of depositing uniform films on substrates using multi-cyclic atomic layer deposition techniques are described. Methods involve varying one or more parameter values from cycle to cycle to tailor the deposition profile. For example, some methods involve repeating a first ALD cycle using a first carrier gas flow rate during precursor exposure and a second ALD cycle using a second carrier gas flow rate during precursor exposure. Some methods involve repeating a first ALD cycle using a first duration of precursor exposure and a second ALD cycle using a second duration of precursor exposure.
    Type: Grant
    Filed: July 30, 2015
    Date of Patent: January 7, 2020
    Assignee: Lam Research Corporation
    Inventors: Purushottam Kumar, Adrien LaVoie, Hu Kang, Jun Qian, Tuan Nguyen, Ye Wang
  • Patent number: 10526702
    Abstract: A film forming apparatus includes: a mounting table that is lifted/lowered between a processing location and a delivery location below the processing location; an encompassing member for encompassing the mounting table positioned at the processing location and to divide an inside of a processing container into a processing space of an upper space and a space of a lower side; an exhaust part for evacuating the inside of the processing container through the processing space; a purge gas supply unit configured to supply a purge gas to the lower side space; a clamp ring stacked on an upper surface of the encompassing member when the mounting table is positioned at the delivery location; and a guiding part formed at the encompassing member to be extended between an upper side of the mounting table and a lower side of the clamp ring and to guide a flow of the purge gas.
    Type: Grant
    Filed: August 22, 2016
    Date of Patent: January 7, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Daisuke Toriya, Eiichi Komori, Manabu Amikura
  • Patent number: 10526703
    Abstract: A film forming apparatus includes a reaction chamber, a pedestal disposed inside the reaction chamber and configured to support a substrate, and a gas shower head over the pedestal. The gas shower head includes a plurality of first holes and a plurality of second hole disposed between a circumference of the gas shower head and the first holes. The first holes are arranged to form a first pattern and configured to form a first portion of a material film on the substrate. The second holes are arranged to form a second pattern and configured to form a second portion of the material film on the substrate. A hole density of the second pattern is greater than a hole density of the first pattern.
    Type: Grant
    Filed: March 15, 2018
    Date of Patent: January 7, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chih-Hui Huang, Sheng-Chan Li, Cheng-Hsien Chou, Cheng-Yuan Tsai
  • Patent number: 10526704
    Abstract: A film forming apparatus includes a chamber having a processing space, a stage provided in the processing space and having a substrate placed thereon, a diffusion tube connected to the chamber so that a diffusion space communicating with the processing space is provided right above the stage, and a gas supply tube extending from the outside of the diffusion tube into the diffusion space through a portion of the diffusion tube and having a gas supply orifice in a portion thereof inside of the diffusion space. The gas supply orifice is formed so as to eject a material gas in a direction away from the stage.
    Type: Grant
    Filed: January 30, 2015
    Date of Patent: January 7, 2020
    Assignee: ASM IP HOLDING B.V.
    Inventors: Yuya Nonaka, Yozo Ikedo
  • Patent number: 10526705
    Abstract: In a CVD reactor, flushing gases of different heat conductivities are used to flush a gap between a substrate holder and a heating system. The lower side of the substrate holder is configured differently in a central region with respect to the heat transmission from the heating system to the substrate holder, than in a circumferential region that surrounds the central region. The gap has such a gap height that, upon a change of a first flushing gas with a first heat conductivity to a second flushing gas with a second heat conductivity, the heat supplied from the heating system to the substrate holder changes differently in the circumferential region than in the central region.
    Type: Grant
    Filed: April 3, 2018
    Date of Patent: January 7, 2020
    Assignee: AIXTRON SE
    Inventors: Adam Boyd, Daniel Claessens, Hugo Silva
  • Patent number: 10526706
    Abstract: A gas supply unit includes a base plate, a plurality of gas supply regions protruding from the base plate and arranged on the base plate in a circumferential direction, and a plurality of sidewall trenches alternating with the gas supply regions on the base plate. A distance between opposing surfaces of the base plate increases in a radial direction from a center of the base plate in each of the plurality of sidewall trenches, so each of the plurality of sidewall trenches has a depth that decreases in the radial direction from the center of the base plate.
    Type: Grant
    Filed: April 12, 2017
    Date of Patent: January 7, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Suk Jin Chung, Jong Cheol Lee, Jae chul Shin, Min Hwa Jung, Jin Pil Heo
  • Patent number: 10526707
    Abstract: A heat exchanger type reaction tube includes a first tube part that forms a first flow channel into which a feed gas flows and in which the feed gas moves down; a second tube part that forms a second flow channel which is connected to the first flow channel and in which the feed gas moves up and that has a granular catalyst carrying support medium charged therein; and a heating device that heats the first tube part and the second tube part. Then, the first flow channel and the second flow channel are adjacent to each other while being separated from each other by a partition wall, and the second flow channel is provided with a distributor which holds the catalyst carrying support medium and through which the feed gas passes.
    Type: Grant
    Filed: July 28, 2013
    Date of Patent: January 7, 2020
    Assignees: THE UNIVERSITY OF TOKYO, HITACHI CHEMICAL COMPANY, LTD.
    Inventors: Suguru Noda, Dong Young Kim, Yusuke Kon, Zhongming Chen, Eisuke Haba, Shunsuke Ueda
  • Patent number: 10526708
    Abstract: A method and apparatus are provided for plasma-based processing of a substrate based on a plasma source having a first, second and third electrodes disposed above a pedestal. The second electrode is disposed between the first and third electrodes. A first gap is formed between the first electrode and the pedestal and between the third electrode and the pedestal. A second gap is formed between the first and second electrodes, and a third gap is formed between the second and third electrodes. A first radio frequency (RF) power supply is connected to the first and third electrodes and is configured to predominantly deliver power to plasmas located in the first gap. A second RF power supply is connected to the second electrode and is configured to predominantly deliver power to plasmas located in the second and third gaps.
    Type: Grant
    Filed: March 12, 2018
    Date of Patent: January 7, 2020
    Assignee: AIXTRON SE
    Inventors: Stephen E. Savas, Carl Galewski, Hood Chatham, Sai Mantripragada, Allan Wiesnoski, Sooyun Joh
  • Patent number: 10526709
    Abstract: The present invention relates to the adhesional pretreatment of plastics surface prior to their metallization by chemical or electrochemical methods and may be used in those industrial fields where decorative or functional metallic coatings on top of the plastic surfaces are needed. The purpose of the proposed invention is a high-quality adhesional pretreatment of plastic surface prior to metallization. The purpose is achieved by treating the plastic before to etch it 5-15 min at 50-70° C. in the alcaline permanganic solution containing 1-3M NaOH and 0.1-0.5 M permanganate ions and acidic permanganic etching solution additionally contains 0.5-8.0 M of copper nitrate and the etching is performed at room temperature during 5-60 min.
    Type: Grant
    Filed: November 15, 2016
    Date of Patent: January 7, 2020
    Assignees: VMTI FIZINIU IR TECHNOLOGIJOS MOKSLU CENTRAS, UAB “REKIN INTERNATIONAL”
    Inventors: Leonas Naruskevicius, Mark Hyman
  • Patent number: 10526710
    Abstract: Spheroidal polymer beads having a uniform size are prepared by polymerizing uniformly sized monomer droplets formed by dispersing a polymerizable monomer phase over double-walled cylindrical cross-flow membrane into an suspension phase. A shear force is provided at a point of egression of the polymerizable monomer phase into the suspension phase, the direction of shear substantially perpendicular to the direction of egression of the monomer phase. The membrane is metallic and includes a superhydrophobic coating.
    Type: Grant
    Filed: December 6, 2017
    Date of Patent: January 7, 2020
    Assignee: Purolite (China) Co., Ltd.
    Inventor: Serguei Rudolfovich Kosvintsev
  • Patent number: 10526711
    Abstract: Plastic material-comprising surfaces of a substrate are coated with elemental silicon by cold gas spraying by injecting a powder containing silicon into a gas and powder with a high velocity onto the substrate surface, such that the silicon forms a firmly adherent coat on the substrate surface comprising the plastics material. Apparatuses having such silicon-coated surfaces are useful in minimizing contamination of polycrystalline silicon production, processing, packaging, and transport.
    Type: Grant
    Filed: August 26, 2015
    Date of Patent: January 7, 2020
    Assignee: Wacker Chemie AG
    Inventors: Gerhard Forstpointner, Bernhard Baumann, Michael Fricke
  • Patent number: 10526712
    Abstract: A cutting tool comprises a base material which includes particles including a tungsten carbide (WC) as a main component, a binder phase including cobalt (Co) as a main component, and particles including a carbide or a carbonitride of at least one selected from the group consisting of Group 4a, 5a, and 6a elements, or a solid solution thereof; and a hard film formed on the base material, wherein the hard film comprises at least an alumina layer, a cubic phase free layer (CFL), in which the carbide or the carbonitride is not formed, is formed from a surface of the base material to a depth of 10 ?m to 50 ?m, and a Co content of a surface of the CFL is 80% or more of a maximum Co content of the CFL.
    Type: Grant
    Filed: November 10, 2015
    Date of Patent: January 7, 2020
    Assignee: KORLOY INC.
    Inventors: Yong-hyun Kim, Jung-wook Kim, Sung-Gu Lee, Sun-Yong Ahn
  • Patent number: 10526713
    Abstract: A device for in-situ production of caustic and increasing alkalinity of a detergent and methods for increasing alkalinity of a detergent are disclosed. In particular, in situ electrochemical conversion of bicarbonate, sesquicarbonate or carbonate sources into caustic provides a safe means for increasing alkalinity of a detergent for a variety of cleaning applications. The invention further discloses methods for cleaning using the electrochemically enhanced detergent according to the invention.
    Type: Grant
    Filed: December 2, 2014
    Date of Patent: January 7, 2020
    Assignee: Ecolab USA Inc.
    Inventors: Kim R. Smith, Erik C. Olson
  • Patent number: 10526714
    Abstract: Disclosed are a method and device for using CO2 mineralization to produce sodium bicarbonate or sodium carbonate and output electric energy. The device comprises an anode area, an intermediate area, and a cathode area. The anode area and the intermediate area are spaced by a negative ion exchange membrane (2). The intermediate area and the cathode area are spaced by a positive ion exchange membrane (3). The anode area, the intermediate area, and the cathode area can accommodate corresponding electrolytes. An anode electrode (1) is disposed in the anode area, a cathode electrode (4) is disposed in the cathode area, and the cathode electrode and the anode electrode are connected through a circuit. A raw material hydrogen gas inlet is disposed in the anode area, and a CO2 inlet and a product hydrogen gas outlet are disposed in the cathode area.
    Type: Grant
    Filed: June 3, 2015
    Date of Patent: January 7, 2020
    Assignee: SICHUAN UNIVERSITY
    Inventors: Heping Xie, Yifei Wang, Tao Liu, Jinlong Wang
  • Patent number: 10526715
    Abstract: A rare earth permanent magnet is prepared by immersing a portion of a sintered magnet body of R1—Fe—B composition (wherein R1 is a rare earth element) in an electrodepositing bath of a powder dispersed in a solvent, the powder comprising an oxide, fluoride, oxyfluoride, hydride or rare earth alloy of a rare earth element, effecting electrodeposition for letting the powder deposit on a region of the surface of the magnet body, and heat treating the magnet body with the powder deposited thereon at a temperature below the sintering temperature in vacuum or in an inert gas.
    Type: Grant
    Filed: October 13, 2017
    Date of Patent: January 7, 2020
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Yukihiro Kuribayashi, Yoshifumi Nagasaki
  • Patent number: 10526716
    Abstract: The invention relates to a method for producing a metal chalcogenide thin film electrode, comprising the steps: (a) contacting a metal or metal oxide with an elementary halogen in a non-aqueous solvent, producing a metal halide compound in the solution, (b) applying a negative electric voltage to an electrically conducting or semiconducting substrate which is in contact with the solution from step (a), and (c) during and/or after step (b) contacting the substrate with an elementary chalcogen forming a metal chalcogenide layer on the substrate. The invention also relates to a metal chalcogenide thin film electrode which can be produced by the method and its use as an anode for releasing oxygen during (photo)electrochemical water splitting.
    Type: Grant
    Filed: December 4, 2014
    Date of Patent: January 7, 2020
    Assignee: TECHNISCHE UNIVERSITAET BERLIN
    Inventors: Michael Lublow, Anna Fischer, Matthias Driess, Thomas Schedel-Niedrig, Marcel-Philip Luecke
  • Patent number: 10526717
    Abstract: An anodising apparatus for selectively anodizing at least a portion of a surface of a component can include a conformable wicking element configured to absorb a fluid, the conformable wicking element being conformable to at least the portion of the surface of the component, wherein, upon bringing the component into contact with the conformable wicking element, the fluid completes an electric circuit between the component and a conductive element, the anodising apparatus being configured to grow an anodised layer on the portion of the surface of the component that is in contact with the conformable wicking element when an electric current is supplied to the electric circuit between the conductive element and the component.
    Type: Grant
    Filed: November 13, 2018
    Date of Patent: January 7, 2020
    Assignee: Biomet UK Healthcare Limited
    Inventors: Andrew Williams, Gethin Holloway, Lyndon Stephens, David Lloyd, Richard Bye
  • Patent number: 10526718
    Abstract: The present invention relates to the field of plating, including, but not limited to electroplating metallic articles, for example metallic discs that can be used as, or converted into, coins. Embodiments of the present invention described herein incorporate luminescent particles into plated metallic layers so that they can be detected for security purposes.
    Type: Grant
    Filed: May 9, 2014
    Date of Patent: January 7, 2020
    Assignee: The Royal Mint Limited
    Inventors: David Mathew James, Ellis Rhys Thomas, Gwilym Hibbert
  • Patent number: 10526719
    Abstract: Among other things, one or more systems and techniques for promoting metal plating profile uniformity are provided. A magnetic structure is positioned relative to a semiconductor wafer that is to be electroplated with metal during a metal plating process. In an embodiment, the magnetic structure applies a force that decreases an edge plating current by moving metal ions away from a wafer edge of the semiconductor wafer. In an embodiment, the magnetic structure applies a force that increases a center plating current by moving metal ions towards a center portion of the semiconductor wafer. In this way, the edge plating current has a current value that is similar to a current value of the center plating current. The similarity between the center plating current and the edge plating current promotes metal plating uniformity.
    Type: Grant
    Filed: August 21, 2013
    Date of Patent: January 7, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Ming-Chin Tsai, Chung-En Kao, Victor Y. Lu
  • Patent number: 10526720
    Abstract: An apparatus for drawing a crystalline sheet from a melt. The apparatus may include a crucible configured to contain the melt and having a dam structure, where the melt comprises an exposed surface having a level defined by a top of the dam structure. The apparatus may further include a support apparatus disposed within the crucible and having an upper surface, wherein the crystalline sheet is maintained flush with the exposed surface of the melt when drawn over the support apparatus, and may include a melt-back heater directing heat through the upper surface of the support apparatus to partially melt the crystalline sheet when the crystalline sheet is drawn over the support apparatus.
    Type: Grant
    Filed: August 19, 2015
    Date of Patent: January 7, 2020
    Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Dawei Sun, Peter L. Kellerman, Gregory Thronson
  • Patent number: 10526721
    Abstract: Provided is a method for growing a ?-Ga2O3-based single crystal, whereby it becomes possible to grow a ?-Ga2O3-based single crystal having a small variation in crystal structure and also having a high quality in the direction of a b axis. In one embodiment, a method for growing a ?-Ga2O3-based single crystal includes growing a plate-shaped Sn doped ?-Ga2O3-based single crystal in the direction of the b axis using a seed crystal.
    Type: Grant
    Filed: March 31, 2014
    Date of Patent: January 7, 2020
    Assignees: KOHA CO., LTD., TAMURA CORPORATION
    Inventors: Shinya Watanabe, Kazuyuki Iizuka, Kei Doioka, Haruka Matsubara, Takekazu Masui
  • Patent number: 10526722
    Abstract: The present invention provides a method of manufacturing by the sublimation-recrystallization method more accurately detecting a thermal state of a starting material in a crucible and enabling control of the growth conditions while manufacturing an SiC single crystal.
    Type: Grant
    Filed: March 18, 2016
    Date of Patent: January 7, 2020
    Assignee: SHOWA DENKO K.K.
    Inventors: Masashi Nakabayashi, Kiyoshi Kojima, Hiroyuki Deai, Kota Shimomura, Yukio Nagahata
  • Patent number: 10526723
    Abstract: Systems and methods are disclosed for rapid growth of Group III metal nitrides using plasma assisted molecular beam epitaxy. The disclosure includes higher pressure and flow rates of nitrogen in the plasma, and the application of mixtures of nitrogen and an inert gas. Growth rates exceeding 8 ?m/hour can be achieved.
    Type: Grant
    Filed: June 16, 2016
    Date of Patent: January 7, 2020
    Assignee: Georgia Tech Research Corporation
    Inventors: William Alan Doolittle, Evan A. Clinton, Chloe A. M. Fabien, Brendan Patrick Gunning, Joseph J. Merola
  • Patent number: 10526725
    Abstract: This invention provides a transparent magnetooptical material that is suitable for use in a magnetooptical device such as an optical isolator. Said magnetooptical material comprises either a transparent ceramic consisting primarily of a complex oxide that can be represented by formula (1) or a single crystal of such a complex oxide. Said magnetooptical material does not absorb fiber-laser light in the 0.9-1.1 ?m wavelength range, does not cause heat lensing, and has a higher Verdet constant than TGG crystals, with a Verdet constant of at least 0.14 min/(Oe·cm) at a wavelength of 1,064 nm. Tb2R2O7??(1) (In formula (1), R represents one or more elements selected from among the group consisting of silicon, germanium, titanium, tantalum, tin, hafnium, and zirconium (but not silicon only, germanium only, or tantalum only)).
    Type: Grant
    Filed: September 11, 2014
    Date of Patent: January 7, 2020
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventor: Masanori Ikari
  • Patent number: 10526726
    Abstract: A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 ?m, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm3 for the intended crystal growth.
    Type: Grant
    Filed: November 9, 2016
    Date of Patent: January 7, 2020
    Assignee: MITSUBISHI CHEMICAL CORPORATION
    Inventors: Yutaka Mikawa, Hideo Fujisawa, Kazunori Kamada, Hirobumi Nagaoka, Shinichiro Kawabata, Yuji Kagamitani