Abstract: The invention relates to an electric switch for electric devices. A changeover device is additionally provided for changing the direction of rotation of the electric motor. This changeover device includes a position sensor which is able to be operated from outside and features a haptic element.

Abstract: In a switch device, an operating knob is capable of being pushed so as to swing around a first axis from a non-operated position to a predetermined push operation position with respect to a switch case and is capable of being toggled so as to swing around a second axis that is orthogonal to the first axis from the non-operated position to a predetermined toggle operation position. A first engagement portion where the operating knob engages with a push switch is disposed on the second axis, and a second engagement portion where the operating knob engages with a toggle switch is disposed at a position closer to the first axis in a direction along the second axis than the first engagement portion where the operating knob engages with the push switch.

Abstract: An electronic circuit breaker comprises an arc interruption mechanism that would enhance arc attraction to arc plates and would reduce the possibilities of an arc escaping from the arc plates. The arc interruption mechanism includes an enhanced arc extinguishing chamber. The arc extinguishing chamber includes a plurality of arc plates having first and second sides. The circuit breaker further comprises a stationary contact plate that includes a first arc runner disposed near the first side of the plurality of arc plates. The circuit breaker further comprises a load terminal that includes a second arc runner disposed near the second side of the plurality of arc plates. As an arc is attracted by the plurality of arc plates and the arc enters the plurality of arc plates, a length of a current path associated with the arc is reduced through the first arc runner and the second arc runner by reducing a resistance of the current path for the arc or by reducing a voltage across the circuit breaker.

Abstract: A switching device arrangement has an encapsulation housing and also a drive device. The drive device is supported on the encapsulation housing. The drive device is arranged at a distance from the encapsulation housing via a spacer device. A receiving space is delimited by the spacer device.

Abstract: A vacuum interrupter includes a fixed side contact and a movable side contact; a fixed side electrode rod connected to the fixed side contact; a movable side electrode rod connected to the movable side contact; a fixed side reinforcement plate which is arranged between the fixed side electrode rod and the fixed side contact, and whose rim portion has a step portion to be arranged apart from the back of the fixed side contact; and a movable side reinforcement plate which is arranged between the movable side electrode rod and the movable side contact, and whose rim portion has a step portion to be arranged apart from the back of the movable side contact.

Abstract: At the time of contact between the contacts, the first movable contact comes into contact with the first fixed contact before contact between the second movable contact and the second fixed contact is made. The first movable contact is located on a leading end side of the contact piece with respect to the second movable contact. The first divided piece includes a body and a projection. The body extends in the lengthwise direction. The projection projects in the widthwise direction of the first divided piece from the body. The projection includes a contact portion pressed by the link member.

Abstract: A fuse unit for connecting a battery, including a fuse element having an external connection plate part to which a screw terminal fitting is screwed, a resin-made fuse housing for supporting the fuse element, and a rotation regulating part for stopping rotation of the screw terminal fitting screwed to the external connection plate part, the rotation regulating part includes a terminal abutting part which is formed by folding one edge of the external connection plate part and stops the rotation by abutting on one side edge of the screw terminal fitting, and a cover part which is formed integrally to the fuse housing and covers a back surface of the terminal abutting part.

Abstract: Power fuses having filler material including hydrated zeolite material facilitates increasing power density of electrical fuses in reduced package sizes. The hydrated zeolite material releases water to cool and suppress electrical arcing conditions experienced in higher power circuitry.

Abstract: Various embodiments provide a bearing element for an electrode rod in a lamp stem. The bearing element includes an envelope configured in order to extend along a longitudinal axis of the electrode rod. The envelope has a polygonally shaped cross section at least in sections.

Abstract: The present disclosure discloses a preparation method of pressed Scandia-doped dispenser cathode using microwave sintering. Embodiments of the present disclosure include dissolving some nitrates and ammonium metatungstate with deionized water to prepare a homogeneous solution. Precursor powder with uniform size is obtained by spray drying, the precursor powder is decomposed, and two-step reduction may be proceeded to form doped tungsten powder with uniform element distribution. The cathode is prepared by one-time microwave sintering. One-time forming of cathode sintering is realized, and sintering shrinkage and sintering time are reduced significantly. The method has excellent repeatability, and the cathode has a homogeneous structure and excellent emission performance at 950° C.

Abstract: An emitter (3) and a target (7) are arranged so as to face each other in a vacuum chamber (1), and a guard electrode (5) is provided at an outer circumferential side of an electron generating portion (31) of the emitter (3). The emitter (3) is supported movably in both end directions of the vacuum chamber (1) by the emitter supporting unit (4) having a movable body (40). The emitter supporting unit (4) is operated by an operating unit (6) connected to the emitter supporting unit (4). By operating the emitter supporting unit (4) by the operating unit (6), a distance between the electron generating portion (31) of the emitter (3) and the target (7) is changed, and a position of the emitter (3) is fixed at an arbitrary distance, then field emission is performed with the position of the emitter (3) fixed.

Abstract: Provided is an X-ray tube capable of obtaining a clear X-ray image by reducing unnecessary X-rays radiated from a holder shaft. The X-ray tube includes an electron source 12 for generating an electron beam B, an anode 13 for accelerating the electron beam B and having a hole 13a allowing the electron beam B to pass through, a cylindrical holder shaft 14 forming a passage for allowing the electron beam B to pass through a hole 13a of the anode 13, a magnetic lens 17 arranged around the holder shaft 14 and configured to converge the electron beam B, a target holder 15 connected to the holder shaft 14, a target 16 arranged in the target holder 15 so that the electron beam B collides with the target 16, and an irradiation window 15b arranged in the target holder 15 and configured to extract X-rays generated from the target 15 to the outside. The inner wall of the holder shaft 14 is made of a carbon material to reduce X-rays generated when the electron beam B hits the holder shaft 14.

Abstract: An ion implanting method includes providing a gas having a bonding energy ranged from about 220 kJ/mol to about 450 kJ/mol; ionizing the gas to form a plurality of types of ions; and directing at least one of the types of the ions to implant a substance. The gas includes at least one of N2H4, CH3N2H3, C6H5N2H3, CFCl3 and C(CH3)3F.

Abstract: A charged particle beam device that detects a secondary charged particle beam generated by irradiation of a sample by a primary charged particle beam, includes: an image shift deflector that shifts an irradiation region for irradiation of the sample by the primary charged particle beam; a magnetic sector that separates the primary charged particle beam passing therein from the secondary charged particle beam from the sample using a magnetic field generated therein; a correction mechanism that is placed off of a trajectory of the primary charged particle beam but on a trajectory of the secondary charged particle beam inside the magnetic sector, the correction mechanism deflecting the secondary charged particle beam passing through; and a controller that controls the correction mechanism according to a defined relationship between a shift amount by the image shift deflector and a correction amount by the correction mechanism.

Abstract: A source assembly for ion beam production is disclosed herein. An example source assembly may include a pair of plates separated by a distance, with each plate having an aperture, and the respective apertures aligned, and an ionization space defined at least by the distance and the respective apertures, where a ratio of the distance to an ionic mean free path of a gas in the ionization space is greater than one.

Abstract: According to an embodiment of the present invention, an ion beam apparatus switches between an operation mode of performing irradiation with an ion beam most including H3+ ions and an operation mode of performing irradiation with an ion beam most including ions heavier than the H3+.

Abstract: A method of examining a cryogenic specimen in a Charged Particle Microscope, comprising: Providing the specimen in a cryogenic cell on a specimen holder; Directing a charged particle beam from a source and along an axis through an evacuated beam conduit of an illuminator system so as to irradiate at least a portion of the specimen therewith; Using a detector to detect radiation emanating from the specimen in response to said irradiation, further comprising: Configuring said cell to comprise an elongate tube that extends within said beam conduit into said illuminator system and encloses said axis; Maintaining said tube at a cryogenic temperature at least during said irradiation.

Abstract: Techniques of using a Transmission Charged Particle Microscope for diffraction pattern detection are disclosed. An example method including irradiating at least a portion of a specimen with a charged particle beam, using an imaging system to collect charged particles that traverse the specimen during said irradiation, and to direct them onto a detector configured to operate in a particle counting mode, using said detector to record a diffraction pattern of said irradiated portion of the specimen, recording said diffraction pattern iteratively in a series of successive detection frames, and during recording of each frame, using a scanning assembly for causing relative motion of said diffraction pattern and said detector, so as to cause each local intensity maximum in said pattern to trace out a locus on said detector.

Abstract: The invention relates to a method for inspecting a sample with an assembly comprising a scanning electron microscope (SEM) and a light microscope (LM). The assembly comprises a sample holder for holding the sample. The sample holder is arranged for inspecting the sample with both the SEM and the LM, preferably at the same time. The method comprising the steps of: capturing a LM image of the sample in its position for imaging with the SEM; determining a position and dimensions of a region of interest in or on the sample using the LM image; determining values to which the SEM parameters need to be set to image the sample at a desired resolution; and capturing a SEM image of the region of interest, preferably using the first electron beam exposure of said region of interest.

Abstract: A rasterized exposure method implementing a position correction for edge positions to correct for a non-linear relationship between the position of a feature edge (dCD) of a pattern element boundary and the nominal position of the boundary as expressed through the dose of exposure (d) of the edge pixel is provided. The position correction includes: determining a position value of the edge position, determining a corrected position value based on the position value using a predefined non linear function, and modifying the pattern to effectively shift the pattern element boundary in accordance with the corrected position value. The non linear function describes the inverse of the relationship between a nominal position value (d), which is used as input value during exposure of the pattern, and a resulting position (dCD) of the pattern element boundary generated when exposed with the nominal position value.

Abstract: An apparatus may include a first grounded drift tube, arranged to accept a continuous ion beam, at least two AC drift tubes, arranged in series, downstream to the first grounded drift tube, and a second grounded drift tube, downstream to the at least two AC drift tubes. The apparatus may include an AC voltage assembly, electrically coupled to at least two AC drift tubes. The AC voltage assembly may include a first AC voltage source, coupled to deliver a first AC voltage signal at a first frequency to a first AC drift tube of at least two AC drift tubes. The AC voltage assembly may further include a second AC voltage source, coupled to deliver a second AC voltage signal at a second frequency to a second AC drift tube of the at least two AC drift tubes, wherein the second frequency comprises an integral multiple of the first frequency.

Abstract: A substrate processing method performed by a substrate processing apparatus is provided. The substrate processing method comprises: setting a magnetic pole on a processing space side of each electromagnet belonging to one of first, second and third electromagnet groups to be different from a magnetic pole on the processing space side of each electromagnet belonging to the other two electromagnet groups; generating an electric field by applying a high frequency power to a lower electrode; and performing a first process on the substrate with plasma generated by the electric field.

Abstract: Systems and methods for tuning to reduce reflected power in multiple states are described. The methods include determining values of one or more parameters of an impedance matching circuit so that reflected power is reduced for multiple states. Such a reduction in the reflected power increases a life of a radio frequency generator coupled to the impedance matching circuit while simultaneously processing a substrate using the multiple states.

Abstract: Embodiments of the subject invention relate to a small modular self-contained surface plasma device for decontamination of air and surfaces within enclosed volumes. Embodiments of the subject invention relate to a method and apparatus using the technical process of dielectric barrier discharge (DBD) surface plasma generation from ambient atmosphere for decontamination of air and surfaces within enclosed volumes. The primary application mode is for preservation of perishable commodities within industrial shipping containers through reduction of surface spoilage organisms and destruction of evolved gaseous ethylene that causes premature ripening. Additional implementations include deployment for oxidation of surfaces and/or container atmospheres in applications to diminish or eradicate pesticides, toxins, chemical residues, and other natural or introduced contaminants. Other embodiments envisioned include incorporation of device capabilities and or ancillary modules for feedback input (e.g.

Abstract: A substrate support includes an inner portion arranged to support a substrate, an edge ring surrounding the inner portion, and a controller that calculates a desired pocket depth of the substrate support. Pocket depth corresponds to a distance between an upper surface of the edge ring and an upper surface of the substrate. Based on the desired pocket depth, the controller selectively controls an actuator to raise and lower at least one of the edge ring and the inner portion to adjust the distance between the upper surface of the edge ring and the upper surface of the substrate.

Abstract: A detachable gas injector adaptable to semiconductor equipment includes a top cover, a hollow sleeve, a top housing and a gas output unit. The hollow sleeve receives a convex part of the top cover, thus forming a first transmission passage between the hollow sleeve and the convex part. The top housing has a center hole for accommodating the hollow sleeve, thus forming a second transmission passage between the hollow sleeve and the center hole. The gas output unit is connected to a bottom surface of the hollow sleeve. The gas output unit includes a first partition plate and a second partition plate, which form a first gas output layer, a second gas output layer and a third gas output layer.

Abstract: Provided are methods and systems for operation instability detection in a surface wave plasma source. In an embodiment a system for plasma processing may include a surface wave plasma source configured to generate a plasma field. The system may also include an optical sensor configured to generate information characteristic of optical energy collected in a region proximate to the surface wave plasma source. Additionally, the system may include a sensor logic unit configured to detect a region of instability proximate to the surface wave plasma source in response to the information generated by the optical sensor.

Abstract: Disclosed is an apparatus for and a method of mass analysis, the apparatus and the method being capable of improving a detection accuracy of a target substance including impurities, without increasing a size of the apparatus, and shortening measuring time. The apparatus analyzing a sample containing a target substance and one or more interfering substances, which have a peak of a mass spectrum overlapping that of the target substance includes: a peak correction unit calculating an intensity of net peak D of the mass spectrum of the target substance by subtracting a total sum of estimated intensities of the peak B, which are calculated every predetermined time interval according to the intensity of the peak A and a nonlinear relation F between the peak A and the peak B, from an intensity of peak C of a mass spectrum of the target substance of the sample.

Abstract: A system is disclosed for identifying a precursor ion of a product ion in a scanning DIA experiment. A precursor ion mass selection window is scanned across a precursor ion mass range of interest, producing a series of overlapping windows across the precursor ion mass range. Each overlapping window is fragmented and mass analyzed, producing a plurality of product ion spectra for the mass range. A product ion is selected from the spectra. Intensities for the selected product ion are retrieved for at least one scan across the mass range producing a trace of intensities versus precursor ion m/z. A matrix multiplication equation is created that describes how one or more precursor ions correspond to the trace for the selected product ion. The matrix multiplication equation is solved for one or more precursor ions corresponding to the selected product ion using a numerical method.

Abstract: Certain configurations of a stable capacitor are described which comprise electrodes produced from materials comprising a selected coefficient of thermal expansion to enhance stability. The electrodes can be spaced from each other through one of more dielectric layers or portions thereof. In some instances, the electrodes comprise integral materials and do not include any thin films. The capacitors can be used, for example, in feedback circuits, radio frequency generators and other devices used with mass filters and/or mass spectrometry devices.

Abstract: A mass spectrometry method comprising steps of generating an ion beam from an ion source; directing the ion beam into a collision cell; introducing into the collision cell through a gas inlet on the collision cell a charge-neutral analyte gas or reaction gas; ionizing the analyte gas or reaction gas in the collision cell by means of collisions between the analyte gas or reaction gas and the ion beam; transmitting ions from the ionized analyte gas or reaction gas from the collision cell into a mass analyzer; and mass analyzing the transmitted ions of the ionized analyte or reaction gas. The methods can be applied in isotope ratio mass spectrometry to determine the isotope abundance or isotope ratio of a reaction gas used in mass shift reactions between the gas and sample ions, to determine a corrected isotope abundance or ratio of the sample ions.

Abstract: An apparatus for detecting constituents in a sample includes first and second drift tubes defining first and second drift regions, and a controllable electric field device within a fragmentation region coupled to the first and second drift tubes. The apparatus also includes a first ion shutter positioned between the first drift and fragmentation regions. The apparatus further includes a control system configured to regulate the first ion shutter, thereby facilitating injection of a selected portion of ions from the first drift region into the fragmentation region. The control system is also configured to regulate the controllable device to modify the selected portion of ions to generate predetermined ion fragments within the fragmentation region, thereby facilitating injection of a selected portion of the predetermined fragmented ions into the second drift region. A method of detecting constituents in a sample is facilitated through such an apparatus.

Abstract: An ion separation device comprising a plurality of electrodes arranged in a two-dimensional grid, a gas supply configured to provide a gas flow along the first direction, and an ion inlet arranged to receive ions. The plurality of electrodes is configured to create one or more pseudopotential barriers of increasing magnitude along a first direction. A drag force is applied to the ions by the gas flow is opposed by a pseudopotential gradient of the plurality of electrodes.

Abstract: An apparatus for presenting a chemical spectrum to a human user in an audible and/or tactile format comprises an input that receives at least one chemical spectrum, a processor, and at least one transducer that produces the audible and/or tactile output. The processor identifies a first component and a second component of at least one value of the at least one chemical spectrum, selects at least one periodic function for each first component, and modulates the at least one periodic function according to the second component. Modulated periodic functions are composed into at least one complex function which is output to the at least one transducer to produce the audible and/or tactile output. The chemical spectrum may comprise data obtained from a sample using mass spectrometry, Raman spectroscopy, or the like.

Abstract: A light-emitting device includes: a substrate having a groove extending in a first direction and a first surface and a second surface respectively arranged to sandwich the groove in a second direction; a first electrode provided on the first surface; a second electrode provided on the second surface; a graphite thin film provided on the first electrode and the second electrode and extending from the first electrode to the second electrode along the second direction in such a way as to be astride the groove; a third electrode provided on the graphite thin film in such a way as to be opposite the first electrode via the graphite thin film; and a fourth electrode provided on the graphite thin film in such a way as to be opposite the second electrode via the graphite thin film.

Abstract: According to the present invention, it is possible to provide a cleaning solution which removes a photoresist on a surface of a semiconductor element having a low dielectric constant film (a low-k film) and a material that contains 10 atom % or more of tungsten, wherein the cleaning solution contains 0.001-5 mass % of an alkaline earth metal compound, 0.1-30 mass % of an inorganic alkali and/or an organic alkali, and water.

Abstract: The controller is programmed to cause a low-surface-tension liquid supply unit to supply a liquid film of a low-surface-tension liquid to a front surface of a substrate so as to form a liquid film of the low-surface-tension liquid. The controller is programmed to control the substrate rotating unit and the inert gas supply unit so that an inert gas is supplied toward the rotational center position while rotating the substrate, thereby forming an opening spreading from the rotational center position to be formed in the liquid film, and enlarging the opening in a direction away from the rotational center position, and to control the landing-position changing unit to change the landing position of the low-surface-tension liquid to at least two positions except the rotational center position in accordance with enlargement of the opening so that the landing position is placed outside the peripheral edge of the opening.

Abstract: A semiconductor structure includes a substrate; first and second fins extending from the substrate and oriented lengthwise generally along a first direction; an isolation feature over the substrate and separating bottom portions of the first and the second fins; first and second epitaxial semiconductor features over the first and the second fins, respectively; and a first dielectric feature sandwiched between the first and the second epitaxial semiconductor features. A maximum width of the first dielectric feature is smaller than a width of the isolation feature between the first and the second fins along a second direction perpendicular to the first direction.

Abstract: A tantalum compound, a method of forming a thin film, and a method of fabricating an integrated circuit device, the tantalum compound being represented by the following General Formula (I):

Abstract: The present invention relates to the controlling of the deposition quality of an epitaxial layer, for example of gallium nitride, on a growth plate, for example of silicon, in particular at the level of the edges of the plate. The invention aims, in particular, to reduce the complexity and the production cost of known solutions. The production method according to the invention highlights the existence of a chamfer on each growth plate and provides a self-positioned deposition of a protective film on at least one part of the chamfer using a mechanical mask, preventing the deposition of the protective film on the useful zone Zu through epitaxy.

Abstract: A method for manufacturing a semiconductor device structure is provided. The method includes providing a base substrate and forming a buffer layer on the base substrate. The method also includes forming a patterned silicon layer on the buffer layer. The patterned silicon layer has an opening to expose a portion of the buffer layer. The method further includes epitaxially growing a patterned channel layer and a patterned barrier layer on a top surface of the patterned silicon layer sequentially. In addition, the method includes forming a gate electrode on the patterned barrier layer.

Abstract: A method of forming an epitaxial layer on a substrate such as a sapphire wafer that does not readily absorb thermal radiation. The method includes coating a first side surface of the substrate with an energy-absorbing opaque material. The opaque material forms a thermally absorptive coating on the substrate. The coated substrate may be heated to remove contaminants from the thermally absorptive coating. The coated substrate is positioned in a vacuum deposition chamber and heated by directing radiative energy onto the thermally absorptive coating. An epitaxial layer such as GaN or SiGe is formed on a second side surface of the substrate opposite the thermally absorptive coating.

Abstract: Small size chip handling and electronic component integration are accomplished using handle fixturing to transfer die or other electronic components from a full area array to a targeted array. Area array dicing of a thinned device wafer on a handle wafer/panel may be followed by selective or non-selective de-bonding of targeted die or electronic components from the handle wafer and optional attachment to a carrier such as a transfer head or tape. Alignment fiducials may facilitate precision alignment of the transfer head or tape to the device wafer and subsequently to the targeted array. Alternatively, the dies or other electronic elements are transferred selectively from either a carrier or the device wafer to the targeted array.

Abstract: One embodiment of the invention relates to a method for fabricating a doped semiconductor zone in a semiconductor body. The method includes implanting dopant particles via one side into the semiconductor body or applying a layer containing dopant particles to one side of the semiconductor body. The method also includes irradiating the semiconductor body via the one side with further particles at least in the region containing the dopant particles. The method finally includes carrying out a thermal treatment by means of which the semiconductor body is heated, at least in the region containing the dopant particles, to a predetermined temperature in order to activate the implanted dopant particles, said temperature being less than 700° C.

Abstract: A semiconductor device includes: a semiconductor layer of silicon carbide including a plurality of layers disposed on a main surface side; an electrode layer that is one of the plurality of layers, wherein the electrode layer has an electrode connecting surface to which a conductive connecting member is connected, and the electrode layer is composed mainly of silver; and a first metal layer that is a layer, different from the electrode layer, among the plurality of layers, wherein the first metal layer has a first bonding surface bonded onto the electrode layer such that the electrode connecting surface is exposed to an outside, and a second bonding surface electrically connected to the semiconductor layer, and the first metal layer is composed mainly of titanium carbide.

Abstract: A method of forming a semiconductor device includes forming source regions and drain regions in a semiconductor substrate, and a gate electrode over said semiconductor substrate and between said source and drain regions. The gate electrode is formed from a first semiconductor gate electrode layer deposited on said gate dielectric layer at a first substrate temperature. A second semiconductor gate electrode layer is deposited on the first semiconductor gate electrode layer at a second substrate temperature greater than said first temperature. The two gate electrode layers may be annealed to form a homogenous polycrystalline layer with improved grain size distribution, thereby improving transistor matching in a semiconductor device.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a titanium nitride (TiN) layer on a silicon layer; performing a first treatment process by reacting the TiN layer with dichlorosilane (DCS) to form a titanium silicon nitride (TiSiN) layer; forming a conductive layer on the TiSiN layer; and patterning the conductive layer, the metal silicon nitride layer, and the silicon layer to form a gate structure.

Abstract: A semiconductor structure and a method of forming the same are provided. According to an aspect of the disclosure, a semiconductor structure includes a first layer having a bottom portion and a sidewall connected to the bottom portion, a metal layer disposed above the bottom portion of the first layer, and a second layer disposed above the metal layer and laterally surrounded by the sidewall of the first layer. The metal layer includes a periphery and a middle portion surrounded by the periphery, the middle portion being thicker than the periphery, and a first etch rate of an etchant with respect to the metal layer is uniform throughout the metal layer and is greater than a second etch rate of the etchant with respect to the second layer.

Abstract: A method of forming a contact to a semiconductor device that includes forming a vertically orientated channel region on semiconductor material layer of a substrate; and forming a first source/drain region in the semiconductor material layer. The method may continue with forming a metal semiconductor alloy contact on the first source/drain region extending along a horizontally orientated upper surface of the first source/drain region that is substantially perpendicular to the vertically orientated channel region, wherein the metal semiconductor alloy contact extends substantially to an interface with the vertically orientated channel region. Thereafter, a gate structure is formed on the vertically orientated channel region, and a second source/drain region is formed on the vertically orientated channel region.

Abstract: Methods for depositing a low resistivity nickel silicide layer used in forming an interconnect and electronic devices formed using the methods are described herein. In one embodiment, a method for depositing a layer includes positioning a substrate on a substrate support in a processing chamber, the processing chamber having a nickel target and a silicon target disposed therein, the substrate facing portions of the nickel target and the silicon target each having an angle of between about 10 degrees and about 50 degrees from the target facing surface of the substrate, flowing a gas into the processing chamber, applying an RF power to the nickel target and concurrently applying a DC power to the silicon target, concurrently sputtering silicon and nickel from the silicon and nickel targets, respectively, and depositing a NixSi1-x layer on the substrate, where x is between about 0.01 and about 0.99.