Abstract: The present invention relates to a method and kit for amplifying and detecting a quantity of nucleic acid. The invention is particularly relevant to isothermal amplification techniques carried out on a flow based assay device. The amplified nucleic acid may be detected on the device using an optical read-out.

Abstract: Presented are methods and compositions for spatial detection and analysis of nucleic acids in a tissue sample. The methods can enable the characterization of transcriptomes and/or genomic variations in tissues while preserving spatial information about the tissue.

Abstract: Novel methods of generating a localized population of immobilized clonal amplicons on a support are provided.

Abstract: The present invention is directed to methods, compositions and reaction mixtures for conducting COLD-PCR, by controlling and varying a preferential denaturation time.

Abstract: Devices, apparatus and methods for sequencing macromolecules are disclosed. The devices and apparatus include independently controllable fluid channels bi-directionally coupled to a measurement module.

Abstract: The present invention relates to methods, kits and uses for diagnosing heart failure using miRNA-biomarker from blood.

Abstract: Compositions and methods for diagnosis or treatment of epilepsy disease with EFHC1, EFHC1 agonists, or EFHC1 analogs are provided. Compositions and methods for diagnosis or treatment of epilepsy disease with EFHC1a, EFHC1a agonists, or EFHC1a analogs are provided.

Abstract: The disclosure provides a plurality of nucleic acid sequences comprising multiple variants of a reference sequence. The disclosure further provides plasmids, cells, methods and kits comprising the same.

Abstract: Disclosed are targeted anti-proliferative approaches for breast cancer utilizing CDK7 inhibitors having efficacy in multiple subtypes of breast cancer, including but without limitation to ER-positive, HER2-positive and Triple Negative Breast Cancer. Methods utilize CDK7 inhibitors alone as well in conjunction with EGFR inhibitors, which provides synergistic anti-proliferative effects on breast cancer cells across a broad spectrum of breast cancer subtypes. Methods for determining sensitivity of breast cancer subtypes to CDK7 inhibitors based upon CITED2 expression levels are also described.

Abstract: The present invention relates in general to the field of recombinant protein expression. In particular, the present invention relates to a method for selecting a suitable candidate cell clone for recombinant protein expression and to a host cell for recombinant protein expression, the host cell exhibiting artificially modified gene expression of at least one gene selected from the group consisting of: Hist1h2bc, Egrl, BX842664.2/Hist 1h3c, Dhfr, Fgfr2, AC115880.11, Mmp10, Vsnll (optional), CU459186.17, El 30203 B14Rik, Cspg4, C1qtnf1, Foxp2, and Ptpre.

Abstract: The present invention relates in general to the field of recombinant protein expression. In particular, the present invention relates to a method for selecting a suitable candidate cell clone for recombinant protein expression and to a host cell for recombinant protein expression, the host cell exhibiting artificially modified gene expression of at least one gene selected from the group consisting of: Fkbp10, ZdhhC6, Myrip, Actc1, AC124993.19, Runx2, AC158560.4, PlekhB1, Rps6KA2, Sept1, Sprr2k, and Flt1.

Abstract: A computer-implemented method of preparing a set of differentially informative methylated positions (DIMPs) or differentially informative methylated regions (DIMRs) from a sample methylome of an animal or plant having a phenotypic characteristic different from a wild-type of the same species of animal or plant, and the characteristic is associate with differences in methylation of the genome, comprises: providing a computer with the sample methylome, and a reference methylome of the wild-type of the same species of animal or plant; calculating with the computer a divergence between a plurality of cytosine positions of the sample methylome and the reference methylome; and selecting with the computer a set of DIMPs or DIMRs. Each DIMP or DIMR is selected based on an approximation of the energy required to produce the divergence between methylation levels of the plurality of cytosine positions of the sample methylome as compared to the wild-type methylome.

Abstract: The system described herein for bacterial identification can be used as a point-of-care or lab-based diagnostic system. In some implementations, the system can be used to detect other foreign agents within blood or other samples. The system can include disposable microfluidic cartridges that are removable from the system. The microfluidic cartridges can receive a sample, such as a blood sample, that is suspected of containing bacterial cells and separate the bacterial cells from the blood sample. Once the bacterial cells are separated from the blood, the system can introduce the recombinant detector bacteriophages into the system that can infect the bacterial cells. The system can then detect the expression of reporter genes from the recombinant detector bacteriophages.

Abstract: A hot-rolled steel sheet includes a predetermined chemical composition, and a structure which include, by area ratio, ferrite and bainite in a range of 80% to 98% in total, and martensite in a range of 2% to 10%, in which in the structure, in a case where a boundary having an orientation difference of equal to or greater than 15° is defined as a grain boundary, and an area which is surrounded by the grain boundary, and has an equivalent circle diameter of equal to or greater than 0.3 ?m is defined as a grain, the ratio of the grains having an intragranular orientation difference in a range of 5° to 14° is, by area ratio, in a range of 10% to 60%.

Abstract: The present invention relates to a method for leaching precious metals contained in a waste denitrification catalyst by using a pressure leaching process, and more specifically, to a method for leaching precious metals contained in a waste denitrification catalyst by using a pressure leaching process, the method comprising the steps of: forming a mixture by mixing a waste denitrification catalyst with a sodium salt solution; and leaching vanadium and tungsten contained in the mixture by feeding the mixture into a sealed pressurized reactor, and then heating and stirring the mixture.

Abstract: Provided is aluminum (Al) alloy foam including an Al alloy matrix containing magnesium (Mg), and hollow ceramic spheres dispersed in the Al alloy matrix, wherein a reaction layer including a Mg—Al composite oxide is formed at an interface where the Al alloy matrix is in contact with the hollow ceramic spheres, and wherein a density of the Al alloy foam may be higher at a surface region of the Al alloy foam compared to a middle region of the Al alloy foam.

Abstract: A non-limiting embodiment of a titanium alloy comprises, in percent by weight based on total alloy weight: 5.1 to 6.5 aluminum; 1.9 to 3.2 tin; 1.8 to 3.1 zirconium; 3.3 to 5.5 molybdenum; 3.3 to 5.2 chromium; 0.08 to 0.15 oxygen; 0.03 to 0.20 silicon; 0 to 0.30 iron; titanium; and impurities. A non-limiting embodiment of the titanium alloy comprises an intentional addition of silicon in conjunction with certain other alloying additions to achieve an aluminum equivalent value of at least 6.9 and a molybdenum equivalent value of 7.4 to 12.8, which was observed to improve tensile strength at high temperatures.

Abstract: Provided is a method of manufacturing a crystalline aluminum-iron-silicon alloy, and optionally an automotive component comprising the same, comprising forming a composite ingot including a plurality of crystalline phases by melting aluminum, iron, and silicon raw materials in an inert environment to form a substantially homogenous melt, subsequently solidifying the melt, and annealing the ingot under vacuum by heating at a temperature in the range of 850° C. to 1000° C. yield an annealed crystalline ingot wherein the predominant crystalline phase is FCC Al3Fe2Si. The raw materials can further include one or more additives such as zinc, zirconium, tin, and chromium. Melting can occur above the FCC Al3Fe2Si crystalline phase melting point, or at a temperature of about 1100° C. to about 1400° C. Annealing can occur under vacuum conditions.

Abstract: A steel for a high-strength bolt that includes from 0.50 mass % to 0.65 mass % carbon, from 1.5 mass % to 2.5 mass % silicon, 1.0 mass % or more chromium, 0.4 mass % or less manganese, greater than 1.5 mass % molybdenum, 0.03 mass % or less phosphorus and sulfur combined, and balance iron and inevitable impurities.

Abstract: A Zn—Al—Mg-based plated steel sheet has, an alloy layer formed on a surface of a steel sheet and contains Fe and Si, and a plated layer formed on a surface of the alloy layer opposite to the steel sheet, in which the plated layer and the alloy layer include, in mass %, Al: 45.0 to 65.0%, Si: 0.50 to 5.00%, Mg: 1.00 to 10.00%, and a balance of Zn, Fe, and impurities, the plated layer contains 0.1 to 20.0% of a Mg—Si phase in terms of volume fraction, an average equivalent circle diameter of the Mg—Si phase in the surface layer area is 0.1 to 15.0 ?m, and an integrated value of a Si content from the surface to thickness center of the plated layer is 0.55 times or more of an integrated value of the Si content from the surface to an interface.

Abstract: A pretreatment assembly includes a product support assembly and a pretreatment device. The product support assembly includes a primary support assembly, a primary drive assembly, a number of secondary support assemblies, and a secondary drive assembly. The primary drive assembly is operatively coupled to the primary support assembly. The primary drive assembly imparts a generally constant motion to the primary support assembly. Each secondary support assembly is structured to support a number of work pieces. Each secondary support assembly is movably coupled to the primary support assembly. The secondary drive assembly is operatively coupled to each secondary support assembly. The secondary drive assembly selectively imparts a motion to each secondary support assembly. The pretreatment device is disposed adjacent the product support assembly.

Abstract: A box coating apparatus for vacuum coating of substrates has a vacuum chamber containing an evaporation source and a substrate holder formed as a dome related to the evaporation source and rotatable about an axis. A masking arrangement is located in between for partially shadowing the substrates on the substrate holder relative to the evaporation source. The masking arrangement comprises a fixed masking portion stationary in the vacuum chamber, and a plurality of gradient sector portions carrying gradient shields assigned to the substrates on the substrate holder, for forming a gradient mask. The gradient sector portions can be rotated about the axis between a gradient mask open position where they are stored behind the fixed masking portion, and a gradient mask closed position where they are spread like a fan between the evaporation source and the substrate holder.

Abstract: Provided is an arc evaporation source capable of stably retaining an arc spot on the front end surface of a target and apparatus downsizing. An arc evaporation source includes a target to be melted and vaporized from its front end surface by arc discharge and at least one magnet disposed apart from a side surface of the target radially thereof. The magnet is disposed to form a magnetic field satisfying conditions a) and b) below, on the side surface, in a region of up to 10 mm from the front end surface axially of the target: a) an angle which magnetic lines of force forms with the side surface of the target is 45 degrees or less; and b) a component of the strength of the magnetic lines of force along the axial direction of the target is 200 G or more.

Abstract: A magnetically enhanced HDP-CVD plasma source includes a hollow cathode target and an anode. The anode and cathode form a gap. A cathode target magnet assembly forms magnetic field lines that are substantially perpendicular to a cathode target surface. The gap magnet assembly forms a cusp magnetic field in the gap that is coupled with the cathode target magnetic field. The magnetic field lines cross a pole piece electrode positioned in the gap. This pole piece is isolated from ground and can be connected with a voltage power supply. The pole piece can have a negative, positive, or floating electric potential. The plasma source can be configured to generate volume discharge. The gap size prohibits generation of plasma discharge in the gap. By controlling the duration, value and a sign of the electric potential on the pole piece, the plasma ionization can be controlled. The magnetically enhanced HDP-CVD source can also be used for chemically enhanced ionized physical vapor deposition (CE-IPVD).

Abstract: A box coating apparatus for coating of substrates comprises a vacuum chamber which contains an evaporation source. A substrate holder is disposed vis-à-vis to the evaporation source so that evaporated material can impinge on substrates held by the substrate holder. Besides the evaporation source and the substrate holder, at least one further functional component is provided, namely a Meissner trap and/or a high vacuum valve mechanism, to which a shield arrangement is assigned to prevent evaporated material from impinging on said component. This shield arrangement has a shutter portion which can be moved from a closed shielding position in which it covers a passageway through the shield arrangement and serves to shield said component, to an open pumping position in which it substantially clears the passageway to allow essentially free passage for gases and vapor, and vice versa.

Abstract: Process for manufacturing a printhead for a 3D manufacturing system that uses metal electrodeposition to construct parts. The printhead may be constructed by depositing layers on top of a backplane that contains control and power circuits. Deposited layers may include insulating layers and an anode layer that contain deposition anodes that are in contact with the electrolyte to drive electrodeposition. Insulating layers may for example be constructed of silicon nitride or silicon dioxide; the anode layer may contain an insoluble conductive material such as platinum group metals and their associated oxides, highly doped semiconducting materials, and carbon based conductors. The anode layer may be deposited using chemical vapor deposition or physical vapor deposition. Alternatively in one or more embodiments the printhead may be constructed by manufacturing a separate anode plane component, and then bonding the anode plane to the backplane.

Abstract: A composition comprising dihydropyrazinyl anions that can be coordinated as 6 electron ligands to a broad range of different metals to yield volatile metal complexes for ALD and CVD depositions are described herein. Also described herein are undeprotonated dihydropyrazines that can coordinate to metals as stabilizing neutral ligands. In one embodiment, the composition is used for the direct liquid injection delivery of the metal dihydropyrazinyl complex precursor to the chamber of an ALD or CVD chamber for the deposition of metal-containing thin films such as, for example, ruthenium or cobalt metal films.

Abstract: A method and apparatus produce silicon-carbon composite materials through a chemical vapor deposition or a thermal disposition process in a fluidized bed reactor on a semi-continuous basis. The produced silicon-carbon composite has a unique structure that silicon particles are uniformly dispersed, bonded and embedded into the carbon conductive matrix and forming a secondary structure. The produced silicon-carbon composite can be used as advanced anode materials for lithium battery and other electrochemical energy storage device.

Abstract: A gas delivery substrate for mounting gas supply components of a gas delivery system for a semiconductor processing apparatus is provided. The substrate may include a plurality of layers having major surfaces thereof bonded together forming a laminate with openings for receiving and mounting first, second, third and fourth gas supply components on an outer major surface. The substrate may include a first gas channel extending across an interior major surface that at least partially overlaps a second gas channel extending across a different interior major surface. The substrate may include a first gas conduit including the first gas channel connecting the first gas supply component to the second gas supply component, and a second gas conduit including the second channel connecting the third gas supply component to the fourth gas supply component. Also disclosed are various techniques for manufacturing gas delivery substrates.

Abstract: A method of depositing a thin film having a desired etching characteristic while improving a loss amount and loss uniformity of a lower film includes, on the semiconductor substrate and the pattern structure: a first operation of depositing a portion of the thin film by repeating a first cycle comprising (a1) a source gas supply operation, (b1) a reactant gas supply operation, and (c1) a plasma supply operation for a certain number of times; a second operation of depositing a remaining portion of the thin film by repeating a second cycle comprising (a2) a source gas supply operation, (b2) a reactant gas supply operation, and (c2) a plasma supply operation for a certain number of times after the first operation, wherein a supply time of the source gas supply operation (a1) is longer than a supply time of the source gas supply operation (a2).

Abstract: A technique that improves a quality of substrate processing. A substrate processing apparatus includes: a plurality of processing chambers and transfer chambers; a vacuum transfer chamber; a plurality of gate valves; a plurality of first gas supply units to supply an inert gas to a substrate; a transfer robot; and a control unit to control the plurality of first gas supply units and the transfer robot to: supply the inert gas to the substrate at a first flow rate when a distance between a gas supply port and the substrate passing through the plurality of gate valves is a first distance; and supply the inert gas to the substrate at a second flow rate greater than the first flow rate when the distance between the gas supply port and the substrate is a second distance greater than the first distance when the substrate passes through the plurality of gate valves.

Abstract: A nanoparticle continuous-coating device based on spatial atomic layer deposition. A first-stage pipeline unit, a second-stage pipeline unit, a third-stage pipeline unit and a fourth-stage pipeline unit which are connected sequentially. The first-stage pipeline unit is used for providing a first precursor and enabling the first precursor to be adsorbed on surfaces of nanoparticles. The third-stage pipeline unit is used for providing a second precursor and enabling the second precursor to react with the first precursor on the surfaces of the nanoparticles, so that a monomolecular thin film layer is generated on the surfaces of the nanoparticles. The second-stage and fourth-stage pipeline units are used for cleaning the nanoparticles and discharging the redundant first precursor, the redundant second precursor or reaction by-products.

Abstract: The present disclosure relates to a substrate processing apparatus and a substrate processing method using the same, the substrate processing method including: introducing a substrate into a chamber; processing the substrate while heating the substrate by using a heat source unit provided in the chamber; and reciprocating at least any one of the substrate and the heat source unit in an extending direction of the substrate. Thus, while the substrate is processed, the temperature of the substrate may be uniformly adjusted, and the efficiency of thermal processing of the substrate may thereby be improved.

Abstract: An oxygen-free or oxygen-poor solution for the electroless deposition of a platinum group metal is described. The solution includes a ruthenium (II) amine complex having a first oxidation potential, and a platinum group metal compound having a reduction potential larger than the opposite of the oxidation potential of the ruthenium (II) amine complex.

Abstract: A non-phosphate coated metal material for plastic working includes a metal material, a coating layer formed on a surface of the metal material, and a lubrication layer on the coating layer. The coating layer includes calcium tetraborate. A method for manufacturing a non-phosphate coated metal material includes a pre-treatment process to remove foreign matters or scale from a surface of a metal material, a coating treatment process to form a coating layer on the surface of the metal material by dipping the metal material, which is subject to the pre-treatment process, into a coating agent, and a lubrication treatment process to form a lubrication layer on the coating layer through the contact between the coated metal material and a lubricating agent. The coating agent includes a non-phosphate treatment solution including at least one borate selected from sodium tetraborate and a hydrate thereof, sodium nitrite, calcium hydroxide, and water.

Abstract: A refrigerant compressor includes: an electric component; and a compression component driven by the electric component to compress a refrigerant. At least one sliding member constituting the compression component is made of a base material (185) that is an iron-based material. An abrasion resistance film (180) including a surface layer constituted by at least fine crystals is formed on a sliding surface of the sliding member. The surface layer (181) includes an A portion in which a component contained most is diiron trioxide (Fe2O3). The A portion exists within a range of at least 0.3 ?m or less from an outermost surface of the sliding surface. The abrasion resistance film (180) may include at least one intermediate layer (182 to 184) located between the surface layer (181) and the base material (185). With this, self-abrasion resistance of the sliding member can be improved, so that the refrigerant compressor having excellent reliability and efficiency can be obtained.

Abstract: A method for hydrogen evolution by electrolysis includes soaking a membrane electrode assembly into an alkaline aqueous solution. The membrane electrode assembly includes an anode having a first catalyst layer on a first gas-liquid diffusion layer, a cathode having a second catalyst layer on a second gas-liquid diffusion layer, and a cationic exchange membrane between the first catalyst layer of the anode and the second catalyst layer of the cathode. The first catalyst layer, the second catalyst layer, or both of the above has a chemical structure of MxRuyN2, wherein M is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn, 0<x<1.3, 0.7<y<2, and x+y=2, wherein MxRuyN2 is cubic crystal system or amorphous. The method also applies a voltage to the anode and the cathode for electrolysis of the alkaline aqueous solution, thereby producing hydrogen at the cathode and producing oxygen at the anode.

Abstract: A membrane electrode assembly includes an anode having a first catalyst layer on a first gas-liquid diffusion layer, a cathode having a second catalyst layer on a second gas-liquid diffusion layer, and an anionic exchange membrane between the first catalyst layer of the anode and the second catalyst layer of the cathode. The first catalyst layer has a chemical structure of M?aM?bN2 or M?cM?dCe, wherein M? is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn, M? is Nb, Ta, or a combination thereof, 0.7?a?1.7, 0.3?b?1.3, a+b=2, 0.24?c?1.7, 0.3?d?1.76, and 0.38?e?3.61, wherein M?aM?bN2 is a cubic crystal system and M?cM?d Ce is a cubic crystal system or amorphous.

Abstract: Provided are a photocatalyst electrode for oxygen generation exhibiting a satisfactory onset potential, and a module including this photocatalyst electrode. The photocatalyst electrode for oxygen generation includes a current collector layer; a photocatalyst on the current collector layer; and a promoter supported on at least a portion of the photocatalyst, in which the promoter contains a first metal oxide having an oxygen generation overvoltage of 0.4 V or lower, and a second metal oxide having an oxygen generation overvoltage of higher than 0.4 V.

Abstract: A diaphragm includes a porous supporting body and a polymer porous membrane. When one of surfaces of the porous membrane is defined as a surface A, the other surface opposite to the surface A is defined as a surface B, a section of the porous membrane parallel to the surfaces A and B is defined as a section C, an average pore diameter on the surface A is defined as an average pore diameter DA, an average pore diameter on the surface B is defined as an average pore diameter DB, and an average pore diameter on the section C is defined as an average pore diameter DC, the average pore diameters DA and DB are substantially equal to each other, and the average pore diameter DC is larger than each of the average pore diameters DA and DB.

Abstract: There is provided a steel cord including a steel wire and a plating layer that covers the steel wire and has Cu, Zn, and Co, wherein Cu and Zn are alloyed and a region covered with Co and a region not covered with Co are mixed on the outermost surface of the plating layer.

Abstract: A steel sheet for cans has, on the surface thereof, in order from the steel sheet side, a chromium metal layer and a hydrous chromium oxide layer. The chromium metal layer is deposited in an amount of 50-200 mg/m2, and the hydrous chromium oxide layer is deposited in an amount of 3-15 mg/m2 in terms of chromium. The chromium metal layer includes: a flat chromium metal layer that has a thickness of at least 7 nm; and a granular chromium metal layer that includes granular protrusions that are formed on the surface of the flat chromium metal layer. The maximum grain size of the granular protrusions is 150 nm or smaller. The number density of the granular protrusions per unit area is 10/?m2 or higher.

Abstract: The Sn-plated steel sheet of the disclosure is an Sn-plated steel sheet including: a steel sheet; an Sn plating layer formed on at least one side of the steel sheet and containing, based on % by mass, from 0.1 g/m2 to 15 g/m2 of metal Sn; and a coating layer formed on the surface of the Sn plating layer and containing zirconium oxide and tin oxide; in which the content of the zirconium oxide in the coating layer is from 0.2 mg/m2 to 50 mg/m2 in terms of metal Zr amount, and the peak position of binding energy of Sn3d5/2 according to X-ray photoelectron spectroscopy of the tin oxide in the coating layer is 1.6 eV or higher than the peak position of binding energy of the metal Sn.

Abstract: A semiconductor package includes a plurality of metal leads and a semiconductor die attached to the plurality of metal leads by an interconnect. A surface of the plurality of metal leads, a metallized surface of the semiconductor die, and/or a surface of the interconnect comprises Cu and has a thermal conductivity in a range of 340 to 400 W/mK and an electrical conductivity in a range of 80 to 110% IACS. One or more of the surfaces which comprise Cu and have a thermal conductivity in the range of 340 to 400 W/mK and an electrical conductivity in the range of 80 to 110% IACS also includes micropores having a diameter in a range of 1 ?m to 10 ?m. A method of manufacturing a metal surface with such micropores also is described.

Abstract: A plating apparatus for plating a substrate is provided to reduce vibration of a paddle. The plating apparatus includes a plating bath configured to accommodate plating solution; a paddle that is arranged in the plating bath, and configured to move in a reciprocating direction along a surface of the substrate to stir the plating solution; a support member for supporting a first end portion of the paddle; a first magnet provided on the paddle; and a second magnet provided on the plating bath. The first magnet and the second magnet are configured to exert a magnetic force on each other so that a second end portion on an opposite side to the first end portion of the paddle is suppressed from vibrating in directions approaching and leaving the substrate while the paddle is moving.

Abstract: To prevent turbulence on a surface of a plating solution as much as possible and suppress spattering and splashing of the plating solution even when the plating solution is stirred. Provided is a wave absorbing member that is attachable to a paddle moveable in a horizontal direction to stir liquid. The wave absorbing member includes a thin plate shaped body portion configured to move on a liquid surface when moving in the horizontal direction and a front end portion designed to be tapered toward an end from the body portion.

Abstract: The present invention provides polycrystalline silicon suitably used as a raw material for producing single crystal silicon. The polycrystalline silicon rod of the present invention is a polycrystalline silicon rod grown by chemical vapor deposition performed under a pressure of 0.3 MPaG or more, wherein when a plate-shaped sample piece collected from an arbitrary portion of the polycrystalline silicon rod is observed with a microscope with a temperature increased from a temperature lower than a melting point of silicon up to a temperature exceeding the melting point of silicon, a heterogeneous crystal region, which is a crystal region including a plurality of crystal grains heterogeneously assembled and including no needle-like crystal, having a diameter exceeding 10 ?m is not observed.

Abstract: A spiral yarn structure includes a core yarn comprising at least one core filament which is a filament fiber of 5-25D, a cover yarn comprising a plurality of cover fibers formed by stretching roves having a count ranging from 0.5 Ne to 2.0 Ne, wherein the cover fibers encloses the core yarn, and a wrap yarn wrapping the cover yarn at a twist factor K?3, wherein the wrap yarn comprises at least one wrap filament which is a filament fiber of 5-25D, and the at least one wrap filament wraps an outer side of the cover yarn at an inclined angle to form the spiral yarn structure having a count ranging from 40 Ne to 80 Ne.

Abstract: A fabric assembly includes a knitted fabric and a filament. The knitted fabric is adapted to move between a stretched state extended along a direction of an applied force, and a relaxed state. The filament is disposed in the knitted fabric, and includes a plurality of loops longitudinally spaced apart from one-another. Each loop of the plurality of loops are adapted to project outward from the knitted fabric when in the stretched state, and substantially retract into the knitted fabric when in the relaxed state.

Abstract: The present invention relates to a nonwoven fabric comprising a plurality of polypropylene-containing fibers that form a nonwoven web, which fibers in addition contain a slip agent, the web has a side which is provided with an alternating pattern which consists of individualized bonded areas which bonded areas are in the form of rods which are arranged in the cross direction of the web, the alternating pattern of individualized bonded areas defines a non-bonded area, the web has a basis weight on the range of from 5-25 g/m2, the surface of the bonded areas is in the range of 5-20% of the total surface of the side, and the surface of the non-bonded area is in the range of 80-95% of the total surface of the side. The present invention further relates to a process for forming the nonwoven fabric.