Abstract: A call processing apparatus according to an embodiment includes a controller. The controller is configured to (i) perform a removal process of removing driving sounds of a vehicle other than a specific driving sound from sounds collected by a microphone in a cabin of the vehicle while an occupant of the vehicle is talking on a phone, and (ii) transmit an adjusted sound generated by performing the removal process to a call opposite party who is talking with the occupant of the vehicle via the phone.

Abstract: [Problem] To provide an audio-input device with which it is possible to properly acquire also the audio of a conversation held between a wearer of said device and two other conversation participants.[Solution] This audio-input device 100 is provided with: a first arm 10 and a second arm 20 which can be arranged at positions such that a target sound source is interposed therebetween; and a plurality of sound collection parts 41-46 provided in a quantity of at least three for each of the first arm 10 and the second arm 20 (a total quantity of at least six).

Abstract: A method is provided that is performed at a system including multiple speech collectors to collect speech from a talker to produce corresponding ones of multiple audio signals that each convey speech energy: for each audio signal: separating high-frequency speech energy from low-frequency speech energy; and determining a first energy level of the high-frequency speech energy; and determining a preferred audio signal among the multiple audio signals for subsequent processing at least based on the first energy level of each audio signal.

Abstract: Embodiments herein provide a system and method for automatically generating a sign language video from an input speech using the machine learning model. The method includes (i) extracting a plurality of spectrograms of an input speech by (a) encoding, using an encoder, a time domain series of the input speech to a frequency domain series, and (b) decoding, using a decoder, a plurality of tokens for time steps of the frequency domain series, (ii) generating a plurality of pose sequences for a current time step of the plurality of spectrograms using a first machine learning model, and (iii) automatically generating, using a discriminator of a second machine learning model, a sign language video for the input speech using the plurality of pose sequences and the plurality of spectrograms when the plurality of pose sequences are matched with corresponding the plurality of spectrograms that are extracted.

Abstract: A system that can capture a user's voice sample and, based on a comparison with other voice samples stored in a database, determine the existence of one or more musculoskeletal conditions within the user's body. The analysis of the voice sample include determining various voice characteristics of the sample against those that are in the database-stored samples to determine matches with conditions and their associated severities. The results are presented via an application that can present location and severity on a 3D avatar model.

Abstract: A sag bend portion is formed in a longitudinal part of the load beam and bent in a thickness direction. The load beam includes a first portion and a second portion bordering the sag bend portion. Roots of outrigger portions are secured to the load beam by weld portions. A slit portion is formed around each of the weld portions. The slit portion includes an arc-shaped slit and a pair of extension slits. An outrigger support portion is formed inside the slit portion. The outrigger support portion extends in a direction different from that of the second portion of the load beam with respect to a cross section along the longitudinal direction of the load beam in the thickness direction.

Abstract: According to one embodiment, a magnetic disk device comprises a disk, a head that writes data to the disk and reads data from the disk, and a controller that controls a position of the head so as to write a first spiral servo pattern to the disk, and overwrite a second spiral servo pattern different from the first spiral servo pattern by shifting in a radial direction of the disk from the first spiral servo pattern.

Abstract: The magnetic recording medium includes a non-magnetic support, and a magnetic layer including a ferromagnetic powder. A magnetic tape cartridge and a magnetic recording and reproducing device include the magnetic recording medium. The ferromagnetic powder is an ?-iron oxide powder, and a ferromagnetic powder filling rate of a magnetic layer cross section obtained by observing a cross section of the magnetic layer with a scanning electron microscope is 0.60 or more and 0.80 or less.

Abstract: The magnetic recording medium includes a non-magnetic support, and a magnetic layer including a ferromagnetic powder. A magnetic tape cartridge and a magnetic recording and reproducing device include the magnetic recording medium. The ferromagnetic powder is an ?-iron oxide powder, and a ferromagnetic powder filling rate of a magnetic layer surface obtained by observing a surface of the magnetic layer with a scanning electron microscope is 0.40 or more and 0.60 or less.

Abstract: The present disclosure generally relates to a tape drive. The tape drive comprises a first tape head and a second tape head linearly aligned with one another, where the first tape head and the second tape head are configured to concurrently operate. The first tape head and the second tape head each comprise a plurality of write transducers, a plurality of read transducers, and a plurality of servo transducers. The tape drive further comprises a first actuator coupled to the first tape head and a second actuator coupled to the second tape head. The first and second actuators are configured to independently tilt and move the first and second tape heads, respectively. Tilting and moving the first and second tape heads individually enables the tape drive to compensate for non-linear tape dimensional stability effects.

Abstract: A base member includes a projection having a cylindrical shape and projecting in an axial direction and a component placement part. The projection and the component placement part are adjacent to each other via a curved surface part having a first curved surface and a second curved surface. The first curved surface and the second curved surface have a diameter increasing toward the component placement part in the axial direction. The second curved surface is located closer to a side of the component placement part than the first curved surface in the axial direction.

Abstract: A magnetic tape cartridge includes a case in which a magnetic tape is housed, and an NVM of a cartridge memory provided in the case. The NVM stores cartridge information including an identification ID regarding an allowable range of temperature/humidity in using the magnetic tape, an upper limit of a preservation period of the magnetic tape, and an upper limit of a use frequency of the magnetic tape.

Abstract: There is provided a mold for molding a tape reel that is made of a resin and that includes a cylindrical portion, a bottom portion formed on a proximal end side of the cylindrical portion, and a plurality of through holes penetrating the bottom portion and arranged in a peripheral direction of the cylindrical portion, the mold including: a bottom surface that is used to form the bottom portion; a tubular surface that is used to form the cylindrical portion; and a plurality of projecting portions that protrude from the bottom surface and are used to form the plurality of through holes, respectively, in which, in the tubular surface, a first portion corresponding to a portion between the projecting portions adjacent to each other in the peripheral direction, among the plurality of projecting portions, has a shape that bulges toward a radially outer side of the bottom surface than a second portion corresponding to the projecting portion.

Abstract: The disclosed autonomous cognitive audiovisual editing system and method is capable of cognitively analyzing captured audiovisual content including, but not limited to, video streams, audio streams and still images; and autonomously selecting editing features thereby eliminating the requirement that a user manually input information, such as a theme upon which editing is based. This is an important distinction from other “artificial intelligence” systems and methods which require, for example, manual selection of a video theme, which is not always compatible with the content of the captured audiovisual data.

Abstract: This application relates to a method for matching music with a video performed by a computer device, and a storage medium. The method includes: determining a cut speed of a video; determining a long-time audio speed corresponding to each of a plurality of pieces of candidate music according to a high-scale point and a music duration of the candidate music; selecting matched music from the pieces of candidate music according to the cut speed and the corresponding long-time audio speeds; determining, according to a video duration of the video and a high-scale point corresponding to the matched music, a short-time audio speed corresponding to each music clip in the matched music; and determining a target music clip in the matched music according to the cut speed of the video and the corresponding short-time audio speed, and synthesizing the target music clip and the video to obtain a target video.

Abstract: The disclosed computer-implemented method may include accessing media segments that correspond to respective media items. At least one of the media segments may be divided into discrete video shots. The method may also include matching the discrete video shots in the media segments to corresponding video shots in the corresponding media items according to various matching factors. The method may further include generating a relative similarity score between the matched video shots in the media segments and the corresponding video shots in the media items, and training a machine learning model to automatically identify video shots in the media items according to the generated relative similarity score between matched video shots. Various other methods, systems, and computer-readable media are also disclosed.

Abstract: A magnetic tape management device includes a processor. The processor acquires a temperature and humidity of an environment in which a magnetic tape is stored, derives a specific enthalpy using the temperature and the humidity, and performs management processing on the magnetic tape in accordance with the specific enthalpy.

Abstract: A bias generation circuit and a memory circuit are provided. The bias generation circuit includes: a first load circuit coupled between a working voltage and an regulating node; a bias circuit configured to receive the working voltage and output a bias voltage according to the working voltage; a voltage stabilizing circuit coupled to an output end of the bias circuit and configured to receive a reference voltage and regulate a voltage of the regulating node according to the bias voltage and the reference voltage; and a second load circuit having one end coupled to the output end of the bias circuit and the other end coupled to the regulating node.

Abstract: Apparatuses for controlling power supply to sense amplifiers are described. An example apparatus includes a bank. The bank includes: a first plurality of memory cells; a second plurality of memory cells; first sense amplifiers coupled to the first plurality of memory cells; second sense amplifiers coupled to the second plurality of memory cells; a first power control circuit and a coupled to the first sense amplifiers at a common power supply node; and a second power control circuit coupled to the second sense amplifiers at the common power supply node. The first and second power control circuits receive a plurality of control signals. The first and second power control circuits comprise first and second drive strengths respectively responsive to activation of a control signal of the plurality of control signals. The first drive strength and the second drive strength are different from each other.

Abstract: One implementation includes a random access memory (RAM) that has a muted multiplexing functionality. For instance, a RAM may be implemented having a first outer bank, a first inner bank, a second outer bank, and a second inner bank, each coupled to a controller. Multiplexing circuits for the outer banks may be disposed adjacent the outer banks and away from the controller, whereas the multiplexing circuits for the inner banks may be disposed within or adjacent to the controller.

Abstract: A page buffer includes a first charge/discharge circuit and a second charge/discharge circuit coupled to a bit line. The first charge/discharge circuit is configured to store first bit line forcing information and apply a first bit line forcing voltage to the bit line based on the first bit line forcing information. The second charge/discharge circuit coupled to the bit line and configured to store a second bit line forcing information, and apply a second bit line forcing voltage, different from the first bit line forcing voltage, to the bit line based on the second bit line forcing information. The first bit line forcing voltage and the second bit line forcing voltage are both higher than a programming bit line voltage and lower than a programming-inhabit bit line voltage.

Abstract: Methods, systems, and devices for memory device access techniques are described. Memory systems may be enabled to allow device-controlled access to a portion of volatile memory at a host system. By enabling the memory system to access volatile memory at the host system, the memory system may perform access operations which may reduce a quantity of messages exchanged between the memory system to the host system. The host system may allocate a list of memory resources in volatile memory associated with a first access command. The host system may allocate the same memory resources for a second access command. By allocating the same memory resources, the memory device may transmit a Ready To Transfer (RTT) message for multiple access commands, rather than for each command. In some cases, reducing the quantity of RTT messages may reduce latency and improve performance at the memory system.

Abstract: In one embodiment, a semiconductor storage device includes a plurality of memory chips, at least one of the memory chips including a first controller configured to be shifted to a wait state of generating a peak current, before generating the peak current in accordance with a command. The device further includes a control chip including a second controller configured to search a state of the first controller and control, based on a result of searching the state of the first controller, whether or not to issue a cancel instruction for the wait state to the first controller that has been shifted to the wait state.

Abstract: A semiconductor storage device includes: a storage element that holds data; a bit line that is coupled to the storage element and in which step-down to reference voltage causes data held in the storage element to be inverted, a first step-down circuit that steps down bit line voltage to a first predetermined value equal to or below the reference voltage, the bit line voltage being voltage applied to the bit line; and a control circuit that detects a first voltage change based on a first output from a first inverter which has a voltage dependence of an occurring delay and a second output from a second inverter in which a voltage dependence of an occurring delay is larger than that of the first inverter, and that controls a step-down amount of the bit line voltage by the first step-down circuit depending on an amount of the detected first voltage change.

Abstract: A three-dimensional memory structure is provided and including a memory array, including a first and a second sub-arrays, each having a first selection line, plural word lines, and a second selection line; a connection structure, including plural connection areas, and at least one of extension structures of the first selection line, the plural of word lines, and the second selection line is coupled to a corresponding connection area of the plurality of connection areas; a pass gate set, arranged under the connection structure and between the first and the second sub-arrays, the pass gate set including plural pass gates, and, the word lines and the second selection line, and the pass gates are respectively coupled to the corresponding connection areas; and a drive circuit, coupled to the pass gate set, and disposed under the connection structure.

Abstract: A device includes an interface, which, in operation, couples to a non-volatile memory. The device includes circuitry coupled to the interface. The circuitry, in operation: reads a data configuration structure stored on the non-volatile memory, the data configuration structure being associated with a client circuit of a plurality of client circuits; and configures the client circuit, the configuring including writing data words of the data configuration structure to the client circuit, the writing including determining an address of the client circuit, the address being associated with at least one of the data words, the determining being based on number of data words in the data configuration structure.

Abstract: A semiconductor device may include: a mode input control signal generation circuit configured to generate a control pulse when a mode control operation is performed, generate a mode input control signal by delaying the control pulse by a mode delay period, and control the mode delay period on the basis of a restart signal; a read strobe signal generation circuit configured to generate a read strobe signal on the basis of the control pulse; a read delay circuit configured to generate the read input control signal by delaying the read strobe signal by a read delay period; and a read pipe circuit configured to receive mode data on the basis of the mode input control signal, and receive cell data on the basis of the read input control signal.

Abstract: An integrated circuit includes integrated circuit includes a memory bank, a first group of word lines, a second group of word lines, an access circuit, a converter circuit and a decoder circuit. The first group of word lines is coupled to the memory bank. The second group of word lines is coupled to the memory bank, and arranged in order with the first group of word lines. The access circuit is configured to read the memory bank. The converter circuit is configured to control the access circuit at least based on a first control signal. The decoder circuit is configured to generate the first control signal at least according to a first bit and a second bit of an address signal. The first bit and the second bit indicates one group of the first group of word lines and the second group of word lines.

Abstract: Provided is a memory device including a stack structure. The stack structure is in the memory array region of a substrate. The stack structure comprises a plurality of first insulating layers and a plurality of conductive layers stacked alternately on each other. A first staircase structure and a second staircase structure are located in a first staircase region and a second staircase region of the substrate respectively. The second staircase structure has steps descending from an upper layer proximal to the memory array region to a lower layer distal to the memory array region. Block slits and zone slit are disposed over the substrate in the second staircase region. The block slits divide the stack structure, the first staircase structure and the second staircase structure into memory blocks. The zone slits divide one of the memory blocks into a plurality of zones separately within the memory blocks.

Abstract: A memory device includes a first conductor, a first stacked body on the first conductor, a second conductor on the first stacked body, a second stacked body on the second conductor, and a third conductor on the second stacked body. The first stacked body includes a first ferromagnetic layer, a first insulating layer, a second ferromagnetic layer, a non-magnetic first metal layer, and a third ferromagnetic layer stacked in order from a side of the first conductor. The second and third ferromagnetic layers have magnetizations in opposite directions. The second stacked body includes a fourth ferromagnetic layer, a second insulating layer, a fifth ferromagnetic layer, a non-magnetic second metal layer, and a sixth ferromagnetic layer stacked in order from a side of the second conductor. The fifth and sixth ferromagnetic layers have magnetizations in opposite directions. The sixth ferromagnetic layer has a larger volume than the third ferromagnetic layer.

Abstract: A method for reducing noise in a read signal due attributable to read element asymmetry provides for transmitting a write signal through a write precompensation circuit that shifts rising edges and falling edges of each of pulse in the write signal by a select magnitude and in opposite directions. After the write signal is encoded on a media, a corresponding read signal is read, with a read element, from the media. The method further provides for transmitting the read signal through a magnetoresistive asymmetry compensation (MRAC) block that is tuned to correct second-order non-linearities characterized by a particular set of distortion signatures. The select magnitude of the waveform shift applied by the write precompensation circuit introduces a non-linear signal characteristic that combines with non-linear signal characteristics introduced by the read element to generate one of the particular distortion signatures that is correctable by the MRAC block.

Abstract: A semiconductor memory device includes a refresh counter generating a counting address that is sequentially increasing according to a refresh command; an active latch generating an active address corresponding to an input address according to an active command; and a refresh control circuit repeatedly performing a first refresh period and a second refresh period according to the refresh command, and controlling selective refresh of one or more word lines corresponding to the counting address selected based on one or more high bits of the active address during the first refresh period and controlling sequential refresh of the word lines corresponding to the counting address during the second refresh period.

Abstract: A data transmission system includes a first integrated circuit. The first integrated circuit includes a first mixing terminal coupled to a first power supply voltage terminal at a point internal to the first integrated circuit, a first return terminal, a first resistor having a first terminal coupled to the first mixing terminal, and a second terminal for providing a first mixed voltage, and a second resistor having a first terminal coupled to the second terminal of the first resistor, and a second terminal coupled to the first return terminal.

Abstract: A method for adjusting margin, a circuit for adjusting margin, and a memory are provided. The method is applicable for a memory including a plurality of delay sub-circuits. The method includes: determining a voltage parameter and a temperature parameter, obtaining a target delay value by performing calculation on the voltage parameter and the temperature parameter through a preset time margin model; and adjusting a time margin of the memory by controlling working states of the plurality of delay sub-circuits according to the target delay value.

Abstract: A memory device that includes a memory array and a pre-charge selecting circuit is introduced. The memory array includes a plurality of memory cells that are coupled to a plurality of bit lines and a plurality of word lines, wherein the plurality of word lines are configured to receive an input vector. The pre-charge selecting circuit is configured to selectively pre-charge a selected bit line according to a value of the input vector. The pre-charge selecting circuit is configured to determine whether the value of the input vector is less than a predefined threshold, and generate a gated pre-charge signal to skip pre-charging the selected bit line in response to determining that the value of the input vector is less than the predefined threshold.

Abstract: An apparatus disclosed herein comprises: a plurality of memory cells and a control circuit coupled to the plurality of memory cells. The control circuit is configured to: determine whether the apparatus is in low power mode; in response to determining that the apparatus is in low power mode, perform a normal order read operation on a set of memory cells of the plurality of memory cells; and in response to determining that the apparatus is not in low power mode, perform a reverse order read operation on the set of memory cells of the plurality of memory cells.

Abstract: A first insulating layer 21 is disposed on a substrate 20. N+ layers 2 are separated from the insulating layer and in directions horizontal and vertical to the substrate. P layers 1 contact the n+ layers 2 and extend in the horizontal direction. N+ layers 3 contact the p layers 1. Gate insulating layers 4 cover the p layers 1 and part of the n+ layers 2 and 3. Second gate conductor layers 6 are electrically separated from a first gate conductor layer 5 contacting the gate insulating layers 4. A conductor layer 12 contacts the n+ layers 2. A conductor layer 13 contacts the n+ layers 3. A second insulating layer 22 contacts the first gate conductor layer 5, the n+ layers 2, and the conductor layer 12. A third insulating layer 23 contacts the second gate conductor layers 6, the n+ layers 3, and the conductor layer 13.

Abstract: To remedy short term data retention issues, a non-volatile memory performs a multi-pass programming process to program data into a set of non-volatile memory cells and identifies non-volatile memory cells that experienced downward threshold voltage drift after a first pass of the multi-pass programming process and prior to a final pass of the multi-pass programming process. The final pass of the multi-pass programming process comprises programming non-volatile memory cells not identified to have experienced the downward threshold voltage drift to a set of final target threshold voltages and purposefully overprogramming non-volatile memory cells identified to have experienced the downward threshold voltage drift to threshold voltages greater than respective final target threshold voltages by one or more offsets.

Abstract: A semiconductor storage device includes a memory transistor and a word line connected to a gate electrode of the memory transistor. When a write sequence is interrupted before a k+1th verification operation is ended after a kth verification operation is ended in the nth write loop of the write sequence, a voltage equal to or higher than a verification voltage corresponding to a first verification operation in the nth write loop is supplied to the word line before start of the k+1th verification operation after resumption of the write sequence. A time from the resumption of the write sequence to the start of the k+1th verification operation is shorter than a time from start of the first verification operation to end of the kth verification operation in the nth write loop.

Abstract: According to one embodiment, a semiconductor memory device includes: a memory cell configured to hold 5-bit data; a word line coupled to the memory cell; and a row decoder configured to apply first to 31st voltages to the word line. A first bit of the 5-bit data is established by reading operations using first to sixth voltages. A second bit of the 5-bit data is established by reading operations using seventh to twelfth voltages. A third bit of the 5-bit data is established by reading operations using thirteenth to eighteenth voltages. A fourth bit of the 5-bit data is established by reading operations using nineteenth to 25th voltages. A fifth bit of the 5-bit data is established by reading operations using 26th to 31st voltages.

Abstract: A memory cell is coupled between first and interconnects and includes a variable resistance element and a switching element. The variable resistance element includes first and second ferromagnetic layers and an insulating layer between the first and second ferromagnetic layers. A first circuit is configured to apply a first voltage to the first interconnect. A second circuit is configured to apply a second voltage to the second interconnect. A third circuit is configured to apply a third voltage to the second interconnect. A fourth circuit is configured to apply a fourth voltage to the first interconnect. A sense amplifier circuit is coupled to the first and second interconnects.

Abstract: A microelectronic device includes a stack structure, slot structures, and dielectric material. The stack structure includes blocks each including a vertically alternating sequence of conductive material and insulative material arranged in tiers. At least one of the blocks includes an array region including strings of memory cells, and a staircase region including a crest sub-region interposed between a staircase structure and the array region. An uppermost boundary of the tiers within the crest sub-region underlies an uppermost boundary of the tiers within the array region. The slot structures are interposed between the blocks of the stack structure. The dielectric material extends over and between the blocks of the stack structure. A thickness of a portion of the dielectric material overlying the crest sub-region is greater than a thickness of an additional portion of the dielectric material overlying the array region. Related memory devices, electronic systems, and methods are also described.

Abstract: In certain aspects, a memory device includes memory cells coupled to a same word line and bit lines, respectively, and a peripheral circuit coupled to the memory cells through the word line and the bit lines. Each of the memory cells is in one of states. The peripheral circuit is configured to determine a first number of a first set of the memory cells and a second number of a second set of the memory cells. Threshold voltages of the first set of the memory cells are between a first voltage and a second voltage larger than the first voltage. Threshold voltages of the second set of the memory cells are between the second voltage and a third voltage larger than the second voltage. The peripheral circuit is also configured to estimate a valley voltage corresponding to a first state of the states based, at least in part, on a comparison between the first number and the second number.

Abstract: Various embodiments of the present application are directed towards an integrated memory chip with an enhanced device-region layout for reduced leakage current and an enlarged word-line etch process window (e.g., enhanced word-line etch resiliency). In some embodiments, the integrated memory chip comprises a substrate, a control gate, a word line, and an isolation structure. The substrate comprises a first source/drain region. The control gate and the word line are on the substrate. The word line is between and borders the first source/drain region and the control gate and is elongated along a length of the word line. The isolation structure extends into the substrate and has a first isolation-structure sidewall. The first isolation-structure sidewall extends laterally along the length of the word line and underlies the word line.

Abstract: A memory device includes: a memory cell array including a plurality of memory cells; a peripheral circuit coupled to the memory cell array through word lines and bit lines, and suitable for performing one or more program loops on memory cells that are coupled to a selected word line of the word lines, each program loop including a program voltage application operation and a program verification operation; and a program control circuit suitable for controlling the peripheral circuit to decrease a level of a precharge voltage that is applied to the bit lines during the program verification operation when the number of program loops that are performed is greater than a reference number.

Abstract: Apparatuses, methods, and systems for storing one data value by programming a first memory cell and a second memory cell are disclosed. The first memory cell and the second memory cell may each be programmed to a first data state, a second data state, or a third data state, and the one data value can correspond to a combination of the first data state, the second data state, or the third data state to which the first memory cell and the second memory cell are programmed, where two combinations of the first data state, the second data state, or the third data state to which the first memory cell is programmable and the first data state, the second data state, or the third data state to which the second memory cell is programmable are ineligible to correspond to the one data value.

Abstract: A memory cell of a non-volatile memory includes a select transistor, a floating gate transistor, a first capacitor, a switching transistor and a second capacitor. A first drain/source terminal of the select transistor is connected with a source line. A gate terminal of the select transistor is connected with a word line. The two drain/source terminals of the floating gate transistor are respectively connected with a second drain/source terminal of the select transistor and a bit line. The first capacitor is connected between a floating gate of the floating gate transistor and an erase node. The two drain/source terminals of the switching transistor are respectively connected with the erase node and an erase line. The gate terminal of the switching transistor is connected with a control line. The second capacitor is connected between the erase node and a boost line.

Abstract: Memory cell sensing by charge sharing between two sense nodes is disclosed. A first sense node and a second sense node are pre-charged and the second node is discharged initiating charge sharing between the first sense node and the second sense node that results in an improved sense margin. Sensing circuitry disclosed herein may include one or more pre-charge circuits, sense enable circuits, and charge-sharing circuits. The increased sense margin achieved by sensing circuitry disclosed herein provides better noise immunity and more accurate sensing results.

Abstract: A memory, including a selected memory cell block and a first sense amplifying device, is provided. The selected memory cell block and the first sense amplifying device are both coupled to a first global bit line. The first sense amplifying device is configured to: in a leakage current detection mode, detect a leakage current of the selected memory cell block on a first global bit line to generate leakage current information; and in a data reading mode, provide a reference signal according to the leakage current information, and compare a readout signal on the first global bit line with the reference signal to generate readout data, wherein the leakage current detection mode happens before the data reading mode.

Abstract: A semiconductor storage device includes a plurality of word line layers stacked above one another in a first direction, a memory pillar having a columnar body penetrating the plurality of the word line layers, wherein each portion of the memory pillar intersecting the word line layers functions as a memory cell transistor, a source line layer to which an end of the memory pillar is connected, an acquisition circuit configured to acquire a voltage of the source line layer, and a first adjustment circuit configured to adjust the voltage of the source line layer to a predetermined target voltage based on the acquired voltage. The acquisition circuit includes a dummy pillar having a columnar body penetrating the plurality of word line layers and having an end connected to the source line layer, wherein each portion of the dummy pillar intersecting the word line layers functions as a dummy transistor.