Abstract: Aluminum-magnesium-silicon alloys, fabricated by inventive processes, that exhibit high strength, high conductivity, and high thermal stability.

Abstract: A rotational drive device includes a first rotator configured to rotate with respect to a stator, a plurality of second rotators configured to rotate with respect to the first rotator, a plurality of drivers configured to rotatably drive the respective second rotators, and a plurality of driver controllers configured to rotate integrally with the first rotator and to control rotation of the drivers, respectively, the respective driver controllers being connected to one another by a communication network.

Abstract: The disclosure discloses a mask device and an evaporation device, so as to manufacture a special-shaped display panel, improve the manufacturing efficiency of the special-shaped display panel and lower the cost. The mask device provided by the embodiment of the present disclosure comprises a framework and a first strip plate, where the first strip plate is fixed on the framework and extends along the first direction, the first strip plate includes a first area and a second area, and the width of the first area is greater than the width of the second area in the direction parallel to the surface of the first strip plate and vertical to the first direction.

Abstract: A mask, a manufacturing method therefor, and a manufacturing method for a display substrate are provided. The mask includes: a first clamping region and a second clamping region, which are opposite to each other in a first direction, and at least one mesh region between the first clamping region and the second clamping region, the mesh region is in a first shape, in a case where the mask is stretched in the first direction, the mesh region is in a target shape, the target shape is different from the first shape, and the target shape includes a polygon shape, a circle shape, or an ellipse shape.

Abstract: A mask assembly includes a mask frame in which a first opening is defined, the mask frame including a front surface through which the first opening extends, and a deposition mask which is attached to the front surface of the mask frame and through which a plurality of second openings is defined. The mask frame includes an in which the front surface extends along a direction of gravity, the deposition mask includes an initial mask which is attached to the front surface of the mask frame in the thereof and through which the plurality of second openings is defined, and the of the mask frame having the front surface which extends along the direction of gravity disposes the first opening of the mask frame corresponding to all of the plurality of second openings of the initial mask along the direction of gravity.

Abstract: A structure includes a substrate including a wafer or a portion thereof; and a piezoelectric bulk material layer comprising a first portion deposited onto the substrate and a second portion deposited onto the first portion, the second portion comprising an outer surface having a surface roughness (Ra) of 4.5 nm or less. Methods for depositing a piezoelectric bulk material layer include depositing a first portion of bulk layer material at a first incidence angle to achieve a predetermined c-axis tilt, and depositing a second portion of the bulk material layer onto the first portion at a second incidence angle that is smaller than the first incidence angle. The second portion has a second c-axis tilt that substantially aligns with the first c-axis tilt.

Abstract: Embodiments of the present disclosure provide a substrate processing system. In one embodiment, the system includes a chamber, a target disposed within the chamber, a magnetron disposed proximate the target, a pedestal disposed within the chamber, and a first gas injector disposed at a sidewall of the chamber. The first gas injector includes a first gas channel extending through a body of the first gas injector, the first gas channel has a first gas outlet. The first gas injector also includes a second gas channel extending through the body of the first gas injector, wherein the second gas channel has a second gas outlet. The second gas channel includes a first portion, and a second portion branching off from an end of the first portion, wherein the second portion is disposed at an angle with respect to the first portion, and the first gas injector is operable to rotate about a longitudinal center axis of the body of the first gas injector.

Abstract: A method of making a thin film can include bombarding a substrate with first ions supplied from a first ion beam; and sputtering from a metal sputtering target substantially simultaneously with the bombardment to deposit a metal-ion film onto the substrate, wherein the method is performed without applied heat, and the metal sputtering target comprises one or more of a metal, a transition metal, a semi-metal, alloys thereof and combinations thereof.

Abstract: A process for producing a chalcogen-containing compound semiconductor includes providing at least one substrate coated with a precursor for the chalcogen-containing compound semiconductor in a process chamber; heat treating the at least one coated substrate in the process chamber, wherein during a heat treatment, a gas atmosphere comprising at least one gaseous chalcogen compound is provided in the process chamber; removing the gas atmosphere present after the heat treatment of the at least one coated substrate as a waste gas from the process chamber; cooling the waste gas in a gas processor, wherein a plurality of gaseous chalcogen compounds-present in the waste gas after the heat treatment of the at least one coated substrate are separated in time and space from one another from the waste gas by respective conversion into a liquid or solid form. Further provided is a device designed to carry out the process.

Abstract: A method includes depositing a layer of alumina over a silicon substrate, providing a patterned photoresist over the layer of alumina, providing an iron catalyst layer over the patterned photoresist, providing the iron catalyst layer over an exposed portion of the alumina, providing a first iron catalyst site over a first portion of the alumina, providing a second iron catalyst site over a second portion of the alumina, growing a first carbon nanotube on the first iron catalyst site, growing a second carbon nanotube on the second iron catalyst site, infiltrating the first carbon nanotube and the second carbon nanotube with carbon, and cooling both the first carbon nanotube and the second carbon nanotube. The infiltrating strengthens the first carbon nanotube and the second carbon nanotube to not delaminate from the substrate when the first carbon nanotube and the second carbon nanotube are cooled.

Abstract: The invention relates to methods for the production of high quality graphene. In particular, the invention relates to single-step thermal methods which can be carried out in an ambient-air or vacuum environment using renewable biomass as a carbon source. Specifically, the invention comprises heating a metal substrate and carbon source in a sealed ambient environment to a temperature which produces carbon vapour from the carbon source such that the vapour comes into contact with the metal substrate, maintaining the temperature for a time sufficient to form a graphene lattice and then cooling the substrate at a controlled rate to form a deposited graphene.

Abstract: Methods and systems for depositing vanadium nitride layers onto a surface of the substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a vanadium nitride layer onto a surface of the substrate. The cyclical deposition process can include providing a vanadium halide precursor to the reaction chamber and separately providing a nitrogen reactant to the reaction chamber. The cyclical deposition process may desirably be a thermal cyclical deposition process.

Abstract: Methods are provided for depositing a transition metal nitride-containing material on a substrate in the field of manufacturing semiconductor devices. Methods according to the current disclosure comprise a cyclic deposition process, in which a substrate is provided in a reaction chamber, an organometallic transition metal precursor is provided to the reaction chamber in a vapor phase, and a nitrogen precursor is provided into the reaction chamber in a vapor phase to form a transition metal nitride on the substrate. A transition metal nitride layer, a semiconductor structure and a device, as well as a deposition assembly for depositing a transition metal nitride on a substrate are further provided.

Abstract: A deposition method includes preparing a substrate having an insulating film formed thereon; forming a molybdenum film on the insulating film by supplying a molybdenum-containing gas and a reducing gas to the substrate; and heat-treating the substrate having the molybdenum film formed on the insulating film, without exposing the substrate to atmospheric air.

Abstract: There is included (a) forming a film on a substrate by supplying a first processing gas to the substrate in a process container; (b) forming a first pre-coated film, which has a first thickness and has a material different from a material of the film formed in (a), in the process container by supplying a second processing gas into the process container in a state in which the substrate does not exist in the process container; and (c) forming a second pre-coated film, which has a second thickness smaller than the first thickness and has the same material as the material of the film formed in (a), on the first pre-coated film formed in the process container by supplying a third processing gas into the process container in the state in which the substrate does not exist in the process container.

Abstract: A vaporizer is provided that is capable of heating source material mist under precise temperature management and thereby able to acquire a gas source material which can be adjusted to a prescribed temperature and which has a very low level of variation in temperature and that produces almost no precipitate. The vaporizer heats and vaporizes a source material mist to obtain a gas source material for film forming.

Abstract: High pressure spatial chemical vapor deposition apparatuses and related process are disclosed for forming thin films on a substrate. An enclosure includes plural process chambers fluidly isolated from each other by radial separating barriers. Each chamber contains a different source gas comprising one or more volatile reactive species. The substrate is supported beneath the chambers on a rotating heated susceptor. Rotation of the susceptor carries the substrate in a path which consecutively exposes the substrate to the volatile reactive species in each process chamber. The gases first mix in the gaseous boundary layer formed adjacent the substrate. A thin film gradually grows in thickness on the substrate with each successive pass and exposure to the volatile reactive species in each of the individual process chambers. The film may be grown at high pressures exceeding 1 atmosphere in some implementations. A modular design includes an outer shell and different interchangeable process inserts.

Abstract: A susceptor including a generally circular body having a face with a radially inward section and a radially outward section proximate a circumference of the body, the radially outward section having at least one ring extending upward for contacting a bottom surface of a substrate, and wherein the radially inward section lacks a ring extending upward from the face.

Abstract: Methods of depositing transition metal on a substrate. The disclosure further relates to a transition metal layer, to a structure and to a device comprising a transition metal layer. In the method, transition metal is deposited on a substrate by a cyclical deposition process, and the method comprises providing a substrate in a reaction chamber, providing a transition metal precursor to the reaction chamber in a vapor phase and providing a reactant to the reaction chamber in a vapor phase to form transition metal on the substrate. The transition metal precursor comprises a transition metal from any of groups 4 to 6, and the reactant comprises a group 14 element selected from Si, Ge or Sn.

Abstract: A gas supply member includes a first side opposite a second side and an inner surface defining a first opening extending between the first and second sides. The gas supply member includes a third side orthogonal to the first side, the third side includes a first extension that has a face partially defining the second side, and the first extension includes a first plurality of holes extending through the first extension to the face. The gas supply member includes a fourth side opposite the third side, the fourth side includes a protrusion that has a face partially defining the second side. The gas supply member also includes a baffle disposed adjacent to the inner surface, the baffle includes a first portion extending from the inner surface and a second portion attached to the first portion, and the second portion orthogonal to the first portion and parallel to the third side.

Abstract: A film may be formed on a surface of a substrate by chemical vapor deposition in a reaction container provided with at least a first holding member that is capable of holding the substrate and a second holding member that is capable of holding the substrate independently from the first holding member, by: (a) forming a film on the surface of the substrate by chemical vapor deposition while holding the substrate by the first holding member; (b) moving at least one holding member among the first holding member and the second holding member in at least one direction of the upward direction and the downward direction to hold the substrate by the second holding member instead of the first holding member; and (c) forming a film on the surface of the substrate held by the second holding member by chemical vapor deposition.

Abstract: A substrate retaining apparatus, a load lock assembly comprising the substrate retaining apparatus, and a system including the substrate retaining apparatus are disclosed. The substrate retaining apparatus can include at least one sidewall and one or more heat shields. One or more of the at least one sidewall can include a cooling fluid conduit to facilitate cooling of substrates retained by the substrate retaining apparatus. Additionally or alternatively, one or more of the at least one sidewall can include a gas conduit to provide gas to a surface of a retained substrate.

Abstract: A gas introduction structure extends in a longitudinal direction of a processing container having a substantially cylindrical shape to supply gas into the processing container. The gas introduction structure includes an introduction section that partitions an introduction chamber, an ejection section that partitions a plurality of ejection chambers each including a plurality of gas holes through which the gas is ejected into the processing container, and a branch section that partitions a branch chamber connected to the introduction chamber. The branch chamber is branched to correspond to the number of ejection chambers in a tournament manner and connected to the ejection chambers.

Abstract: A high-strength steel sheet includes a chemical composition including: by mass %, C: 0.080 to 0.500%, Si: 2.50% or less, Mn: 0.50 to 5.00%, P: 0.100% or less, S: 0.0100% or less, Al: 0.001 to 2.500%, N: 0.0150% or less, O: 0.0050% or less, and the balance: Fe and inevitable impurities. The high-strength steel sheet satisfying a predetermined formula has a microstructure in a region from ?t to ?t from a steel sheet surface. The microstructure includes: by volume %, 20% or more of acicular ferrite, 20% or more of an island-shaped hard structure including residual austenite, 2% to 25% of residual austenite, and 20% or less of aggregated ferrite.

Abstract: A component for an electrochemical device, the component including: a metallic substrate; and a plurality of particles bonded to a surface of the substrate by a metallurgical bond, wherein the particles include a metal, carbon, or a combination thereof, wherein the metallurgical bond is between the particles and the substrate, wherein a total projected area of the metallurgical bond is less than 90% of a total projected area of the substrate, and wherein the metallurgical bond has a composition which is a combination of a composition of the metallic substrate and a composition of the particle, a reaction product of the metallic substrate and the particle, or a combination thereof.

Abstract: A method for treating a workpiece made of self-passivating metal and having a Beilby layer including applying a coating to a surface of the workpiece, the coating including a reagent, treating the coating to thermally alter the reagent, wherein the thermal altering of the reagent activates and/or hardens the surface.

Abstract: A method for changing an activation state of an interruption module for selectively interrupting at least one passive cathodic protection unit from a metallic structure. The method includes enabling a global positioning system (GPS) receiver in data communication with a controller of the interruption module, receiving GPS time via the GPS receiver from at least one global positioning system satellite in data communication therewith, synchronizing a real-time clock time of a real-time clock in data communication with the controller to GPS time, disabling the GPS receiver and changing the activation state of the interruption module if a predetermined activation state change time of the interruption module is between the local real-time clock time and the GPS time.

Abstract: An exemplary embodiment of the present invention provides a system for forming ammonia, the system comprising: an anode; a cathode in electrical communication with the anode; and a catalyst material positioned in an electrical communication pathway between the cathode and the anode, the catalyst material comprising a plurality of nanoparticles comprising at least one of a conductor and a semiconductor, each of the nanoparticles comprising an interior cavity, wherein the system is configured to use nitrogen and water to generate ammonia.

Abstract: Methods and systems for improved generation of hydroxy gas are presented. In one embodiment, a hydroxy gas generator is provided that includes a gas generation chamber that contains water and anode-cathode pairs. The anode-cathode pairs may be configured to generate hydroxy gas using a continuously-flowing supply of water. The hydroxy gas generator may also include a water structuring device that reduces the surface tension of the continuously-flowing supply of water. The water structuring device may also magnetically orient the molecules of the continuously-flowing supply of water. The hydroxy gas generator may further include a gas isolation system for extracting hydroxy gas from the gas generation chamber.

Abstract: An apparatus for converting carbon dioxide and natural gas liquids into other chemicals and/or fuels, comprising at least one electrochemical cell, wherein the electrochemical cell reduces the endothermic load associated with electrochemical CO2 reduction, and a method for converting carbon dioxide and natural gas liquids into carbon monoxide and other chemicals and/or fuels, comprising converting CO2 into CO and converting C2H6 into C2H4 at a temperature in the range of 650° C.-750° C.

Abstract: The present invention relates to an electrochemical device and a method for operating the electrochemical device for inducing specific behaviours in its chemical kinetics by supplying externally selected random (stochastic) voltage perturbations while the electrochemical system is operating in a non-oscillatory regime.

Abstract: Disclosed are an electrode structure including: an electrode plate; and a flow path guide disposed on one side of the electrode plate along the circumference of the electrode plate, and an electrolyzer including the electrode structure.

Abstract: A solid or liquid fuel to plasma to electricity power source that provides at least one of electrical and thermal power comprising (i) at least one reaction cell for the catalysis of atomic hydrogen to form hydrinos, (ii) a chemical fuel mixture comprising at least two components chosen from: a source of H2O catalyst or H2O catalyst; a source of atomic hydrogen or atomic hydrogen; reactants to form the source of H2O catalyst or H2O catalyst and a source of atomic hydrogen or atomic hydrogen; one or more reactants to initiate the catalysis of atomic hydrogen; and a material to cause the fuel to be highly conductive, (iii) a fuel injection system such as a railgun shot injector, (iv) at least one set of electrodes that confine the fuel and an electrical power source that provides repetitive short bursts of low-voltage, high-current electrical energy to initiate rapid kinetics of the hydrino reaction and an energy gain due to forming hydrinos to form a brilliant-light emitting plasma, (v) a product recovery syst

Abstract: This disclosure relates to non-ferrous metallurgy and electrolytic production of Aluminium for lining a cathode assembly of an electrolytic cell. The present method includes laying materials while simultaneously distributing same over the surface of a base and levelling them at a height measured from the plane of the top edge of the shell of the cathode assembly of the electrolytic cell by gradually moving a device for installing unformed lining materials along a longitudinal axis of the cathode of the Aluminium electrolytic cell. Said device is configured in the form of a bridge equipped with a mechanical drive for movement. The bridge has guides on which a frame is mounted for vertical movement, said frame having cassettes provided with gates with a mechanical drive. The technical result is reduced labor costs, healthier working conditions for operatives, and better quality installation of the base of an electrolytic cell.

Abstract: A ribbon is formed such that the ribbon floats on a melt using a cold initializer facing an exposed surface of the melt. The ribbon is single crystal silicon. The ribbon is pulled from the silicon melt at a low angle off the melt surface. The ribbon is formed at a same rate as the pulling. The ribbon is separated from the melt at a wall of the crucible where a stable meniscus forms. The ribbon has a thickness between a first surface and an opposite second surface from 50 ?m to 5 mm. The ribbon includes a first region extending a first depth from the first surface. The first region has a reduced oxygen concentration relative to a bulk of the ribbon.

Abstract: The present disclosure provides a temperature field device for crystal growth. The temperature field device may include a first drum; a second drum located inside the first drum; a filler filled in a space between the first drum and the second drum; a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the first drum; and a first cover plate mounted on a top of the temperature filed device and covering a top end of the first drum.

Abstract: A convection pattern estimation method of a silicon melt includes: applying a horizontal magnetic field of 0.2 tesla or more to a silicon melt in a rotating quartz crucible with use of a pair of magnetic bodies disposed across the quartz crucible; before a seed crystal is dipped into the silicon melt to which the horizontal magnetic field is applied; measuring temperatures at a first and second measurement points positioned on a first imaginary line that passes through a center of a surface of the silicon melt and is not in parallel with a central magnetic field line of the horizontal magnetic field as viewed vertically from above; and estimating a direction of a convection flow in a plane in the silicon melt orthogonal to the direction in which the horizontal magnetic field is applied on a basis of the measured temperatures of the first and second measurement points.

Abstract: Methods for preparing a monolayer or few-layer centimeter-scale crystalline black phosphorus film, products thereof, and electronic and optoelectronic devices including the same.

Abstract: Some aspects relate to methods of forming an epitaxial layer. In some examples, the methods include ejecting atoms from a molten metal sputtering material onto a heated crystalline substrate and growing a single epitaxial layer on the substrate from the ejected atoms, where the atoms are ejected with sufficient energy that the grown epitaxial layer has at least a partial rhombohedral lattice, and wherein the crystalline substrate is heated to a temperature of about 600 degrees Celsius or less, or about 500 degrees or less. Other aspects relate to materials, such as a material including a single epitaxial layer on top of a crystalline substrate, the layer including one or more semiconductor materials and having at least a partial rhombohedral lattice, or a substantially rhombohedral lattice.

Abstract: The present disclosure provides a method for increasing luminescence uniformity and reducing afterglow of a Ce-doped gadolinium-aluminum-gallium garnet structure scintillation crystal, a crystal material and a detector. Sc ions are doped into the crystal material, and the Sc ions occupy at least an octahedral site. The effective segregation coefficient of active Ce ions is increased by a radius compensation effect of Sc—Ce ions and adjustment of lattice parameters, thereby the luminescence uniformity of the crystal is increased and the energy resolution is optimized; and at the same time, the potential barrier for Gd ions entering the octahedral site is increased, thereby the probability of the Gd ions entering the octahedral site is reduced, the density of point defects in the crystal is decreased, and the afterglow intensity is reduced. A general formula of the Ce-doped gadolinium-aluminum-gallium garnet structure scintillation crystal is {Gd1-x-y-pScxCeyMep}3[Al1-q]5O12, 0<x?0.1, 0<y<0.02, 0?p?0.

Abstract: A spinneret assembly for spinning polymeric fibers, including: (a) a cap provided with an inlet port and a flared lower surface that flares outwardly from the inlet port in the direction of flow; (b) a spinneret having numerous spinning flow channels through its thickness; (c) a filter freely resting on the spinneret; and (d) a flow guide with a tapered geometry mounted in a cavity defined by the cap and the spinneret. The flow guide has an apex facing the inlet port, a base facing the filter, and one or more side surfaces tapering up to the apex. A diverging flow passage is defined by the tapering side surface(s) of the flow guide and the cap's flared lower surface. The base of the flow guide is spaced apart from an upper surface of the spinneret, creating a space that is in fluid communication with the divergent flow passage.

Abstract: An acrylic fiber for artificial hair may include an acrylic copolymer. The acrylic fiber has a fiber cross section including 2 to 4 T-shaped protrusions that extend radially from a central portion. Each of the T-shaped protrusions has an arc-shaped upper side that bulges in a direction away from the central portion. A circumradius of the fiber cross section is 40.0 to 60.0 ?m. A distance between adjacent end portions of the corresponding upper sides of the adjacent T-shaped protrusions is 3.0 to 60.0 ?m. An axial width is 10.0 ?m or more. Torsional rigidity of the acrylic fiber is 0.30 to 2.0 mg·cm2. The acrylic fiber for artificial hair has high volume, good texture, and good twist processability, and a hair ornament may include the acrylic fiber for artificial hair.

Abstract: The polypropylene nonwoven fabric produced by the method for producing a polypropylene nonwoven fabric according to the present invention has features that it has excellent stretchability and excellent water pressure resistance.

Abstract: A temperature-sensing and humidity-controlling fiber includes a hydrophilic material and a temperature-sensing material. The temperature-sensing material has a lower critical solution temperature (LCST) between 31.2° C. and 32.5° C. when a light transmittance thereof is in a range from 3% to 80%, in which a wavelength of the light is between 450 nm and 550 nm.

Abstract: Apparatus for forming a fibre mat, in particular a non-woven mat, comprising a fibre web-forming device, for example a card, a cross-tapper and a device for drafting the fibre web(s) disposed between the web forming device and the cross-lapper in order to draft the fibre web(s), in particular in a time-varying, specifically periodic manner, to thereby adjust a predetermined desired profile of the fibre mat leaving the cross-lapper, the web-forming device comprising at least one output belt (1, 2) for at least one web (5, 6), and preferably two output belts (1, 2) for two webs (5, 6), an upper and lower web respectively; wherein the cross-hipper has an input belt (7) for receiving the web(s) from the output belt(s) of the web forming device, characterised in that the arrangement is such that the path of the web, or of the at least one web, and preferably of the two, upper and lower, webs, between the output belt(s) of the web-forming device, in particular the card, and the input belt of the cross-lapper includ

Abstract: The present invention addresses the problem of providing a twisted cord of liquid-crystal polyester multifilaments which gives various high-order processed products capable of retaining desired product shapes and which is suitable for use in general industrial material applications such as high-strength ropes, slings, and nets. The twisted cord of liquid-crystal polyester multifilaments has a coefficient of variation in longitudinal-direction cord diameter, X, of less than 30%.

Abstract: The present disclosure provides a ringspinning system for producing a yarn. It is provided a the ringspinning system comprising a bobbin holder for holding a bobbin from which a first filament is supplied, a drafting stage for drafting the first filament together with a second filament, which is fed to the drafting stage, and a spindle, the ringspinning system further contains at least one sensor for detecting a breakage of the first and/or second filament and/or a roving comprising the first and second filament, which roving comes out of the drafting stage, and a clamp assembly comprising a clamp for fixing the second filament in the case that the sensor detects the breakage, wherein the clamp is provided adjacent the bobbin holder. It is further provided a method for stopping the supply of filaments to a drafting stage of a ring spinning system.

Abstract: A mesh belt used in a process for producing a water absorbing body which is formed by warps and wefts being woven with each other. One or more yarns which constitute(s) the warps or the wefts emerging on at least a transporting surface side of the mesh belt is made of an electrically conductive material.

Abstract: The present disclosure provides an article. The article may include a first tubular rib structure and a second tubular rib structure. A webbed area may be located between the first tubular rib structure and the second tubular rib structure. The webbed area may have a first portion with a first width and a second portion with a second width, where the first width may be larger than the second width. The webbed area may be at least partially formed from a first yarn.

Abstract: Systems and methods for forming a tubular braid are disclosed here-in. A braiding system configured in accordance with embodiments of the present technology can include, for example, an upper drive unit, a lower drive unit, a mandrel coaxial with the upper and lower drive units, and a plurality of tubes extending between the upper drive unit and the lower drive unit. Each tube can be configured to receive individual filaments for forming the tubular braid, and the upper and lower drive units can act in synchronization to move the tubes (and the filaments contained within those tubes) in three distinct motions: (i) radially inward toward a central axis, (ii) radially outward away from the central axis, and (iii) rotationally about the central axis, to cross the filaments over and under one another to form the tubular braid on the mandrel.