Abstract: The present invention relates to a support socket and a method for manufacturing a part having a deposited layer using the support sockets. A support socket according to one embodiment of the present invention, which consists of a top surface, a bottom surface, and side surfaces connecting the top surface and the bottom surface to each other, comprises: a groove formed on the bottom surface toward the top surface; and a machining reference surface as a plane forming the bottom of the groove.

Abstract: Apparatus and methods to process one or more substrates are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process condition. The support assembly configured to offset the position of the substrate with respect to the processing stations.

Abstract: A substrate processing apparatus including an electrostatic chuck includes a lower electrode, an upper electrode, a first AC power supply, a first filter circuit connected to the heater, an isolation transformer connected to the heater through the first filter circuit, a second AC power supply connected to the isolation transformer, an internal electrode provided in the lower electrode, a second filter circuit, and a DC power supply, in which the DC power supply is driven under constant current control, and a secondary coil of the isolation transformer is electrically floating.

Abstract: A method and apparatus for processing a substrate are described herein. The methods and apparatus described enable a chemical vapor deposition (CVD) chamber to process substrates (also referred to as wafers herein) at different temperatures. The processing chamber includes a chamber body, a substrate support disposed within the chamber body and having a top surface, a plurality of substrate lift pins disposed through the substrate support, and a shadow ring lift assembly. The shadow ring lift assembly is operable to raise and lower a shadow ring positioned above or level with the top surface of the substrate support.

Abstract: Described herein is a chamber component including a metal layer comprising nickel and a barrier layer of nickel oxide over the metal layer.

Abstract: A method and a system for cold spray deposition of a solid material on a substrate, the system comprising a fluid jet unit; a heating unit; a nozzle, and a powder feeder; the fluid jet unit providing a fluid of a speed up to 1200 m/s and a pressure in a range between 150 and 620 MPa to the heating unit, the heating unit controlling a temperature of the fluid and outputting one of: a superheated and a supercritical fluid; the powder feeder injecting feedstock powder particles into a mixing chamber of the nozzle, the feedstock powder particles being accelerated to a speed above a critical velocity of the feedstock powder particles by the fluid within the nozzle, the nozzle being configured for acceleration of the fluid, mixing the fluid and the feedstock powder particles, and projecting the mixture onto the substrate.

Abstract: The present disclosure relates to a coating of a press hardened steel strip, the coating providing cathodic protection. The coating of the post-press hardened steel strip comprises zinc, aluminum, and at least one element selected from manganese (Mn) and/or antimony (Sb).

Abstract: A photoelectrochemical system may be utilized for processing of hydrogen sulfide to hydrogen. For example, a method for hydrogen production from hydrogen sulfide may include: providing a photocathode electrically connected by a wire to a photocatalyst, where both the photocathode and the photocatalyst are at least partially immersed in an electrolyte solution that includes an aqueous fluid having hydrogen sulfide at least partially dissolved therein; illuminating the photocathode with first light thereby causing the photocathode to generate a first plurality of electron-electron hole pairs, wherein the photocathode includes a silicon-based heterojunction; illuminating a photocatalyst with second light thereby causing the photocathode to generate a second plurality of electron-electron hole pairs, wherein the photocatalyst includes a semiconductor; and photochemically converting the hydrogen sulfide to hydrogen gas and sulfur.

Abstract: An electrolytic cell for producing gaseous hydrogen is disclosed and comprises the following arranged along a cell axis: at least one anion exchange membrane and at least a first cell frame and a second cell frame. The cell frames delimit respective inner regions, and thus two half-cells are formed. The cell frames are mutually spaced in the direction of the cell axis, the first cell frame being located on a first flat side of the anion exchange membrane and the second cell frame being located on an opposite second flat side of the anion exchange membrane. The first and second cell frames comprise at least one outflow channel structure, which is fluidically coupled to the first flow channel and to the inner region, and at least one inflow channel structure, which is fluidically coupled to the second flow channel and to the inner region of the cell frame in question.

Abstract: The invention relates to an offshore electrolysis plant including an electrolyzer, which is disposed in a container, and a heat exchanger, which is designed to absorb process heat from the electrolysis and to discharge said process heat out of the container in a closed coolant circuit. A coolant pump for conveying the coolant in the coolant circuit is disposed in the container. The invention also relates to a method for operating an offshore electrolysis plant having an electrolyzer disposed in a container. In the method, in order to absorb process heat from the electrolysis and to discharge said process heat out of the container, coolant is conducted in a closed coolant circuit, wherein a coolant pump disposed in the container is operated.

Abstract: Large scale exploitation of Solar energy is proposed by using floating devices which use solar energy to produce compressed hydrogen by electrolysis of deep sea water. Natural ocean currents are used to allow the devices to gather solar energy in the form of compressed hydrogen from over a large area with minimum energy transportation cost. The proposal uses a combination of well understood technologies, and a preliminary cost analysis shows that the hydrogen produced in this manner would satisfy the ultimate cost targets for hydrogen production and pave the way for carbon free energy economy.

Abstract: A method for electrochemically reducing carbon dioxide includes the step of providing a liquid or supercritical carbon dioxide mixture comprising liquid or supercritical carbon dioxide, water, a phase transfer catalyst, and an ion conducting salt. A potential difference is applied across a portion of the liquid or supercritical carbon dioxide mixture to cause the reduction of carbon dioxide with protons from the water. A reactor for electrochemically reducing carbon dioxide is also disclosed.

Abstract: A photoelectrochemical system may be utilized for processing of wastewater to hydrogen. For example, a method for hydrogen production from wastewater may include: providing a photocathode electrically connected by a wire to a photocatalyst, where both the photocathode and the photocatalyst are at least partially immersed in an electrolyte solution that comprises an aqueous fluid having wastewater at least partially dissolved therein; illuminating the photocathode with first light thereby causing the photocathode to generate a first plurality of electron-electron hole pairs, wherein the photocathode comprises a silicon-based heterojunction; illuminating a photocatalyst with second light thereby causing the photocathode to generate a second plurality of electron-electron hole pairs, wherein the photocatalyst comprises a semiconductor; and photochemically converting the wastewater to hydrogen gas and oxygen.

Abstract: An anode for oxygen evolution in electrolytic processes comprising a nickel-based planar substrate having a first side and second side and a porous catalytic coating formed on at least one side of the substrate, wherein the porous catalytic coating exhibits a lamellar morphology made from metallic patches and void patches, the metallic patches being made from a material selected from nickel, nickel oxide, a nickel-aluminium alloy, or combinations thereof. The present invention also concerns a method for the production of such an anode using powder plasma spraying or electric wire-arc spraying.

Abstract: A bipolar plate-porous transport layer (PTL) assembly for a polymer-electrolyte-membrane water electrolyzer includes a flat metallic bipolar plate and a metal foam PTL adjacent to and in direct contact with the flat metallic bipolar plate. The metal foam PTL includes flow channels defined by flow channels walls with flow channel surfaces. The flow channel walls and flow channel surfaces have an average porosity generally equal to an average porosity of an interior of the metal foam PTL.

Abstract: The present disclosure relates to a bismuth vanadate electrode including vanadium-functionalized graphene quantum dots and a method for preparing the same. More particularly, it relates to a technology which is capable of, by adding graphene quantum dots (GQDs) in the process of immersing a bismuth vanadate (BiVO4) electrode in an alkaline solution to remove vanadium oxide (V2O5) excessively formed on the surface of the electrode during its preparation, protecting the electrode from the alkaline solution as the graphene quantum dots are adsorbed onto the surface of BiVO4 while V2O5 is removed, and improving the efficiency of oxygen evolution reaction (OER) when applied to a photoanode due to vanadium (V)-functionalized graphene quantum dots formed as the etched vanadium ions ((VO)43?) are adsorbed onto the graphene quantum dots.

Abstract: An electrolysis cell for polymer electrolyte membrane electrolysis with a cathodic half-cell and an anodic half-cell is provided. The cathodic half-cell and the anodic half-cell are separated from one another by a polymer electrolyte membrane. At least one of the half-cells has a channel structure which is formed by a gas diffusion layer and a bipolar plate. The bipolar plate has a main body made of a metal base material having a coating material. The coating material is present in a homogeneous mixed phase including titanium niobium (TiNb), titanium niobium nitride and also iridium and/or iridium carbide (IrC). A coating to be applied as a protective layer to a metal component of an electrolysis cell is also described. This coating comprises the constituents titanium niobium (TiNb) and titanium niobium nitride (TiNbN) and also admixtures of iridium carbide (IrC) and/or (Ir).

Abstract: The present invention provides a catalyst comprising: a conductive carbon substrate comprising nitrogen; a transition metal nanoparticle enveloped within the conductive carbon substrate; and a single atom transition metal catalytic site located on a surface of the conductive carbon substrate, wherein the transition metal nanoparticle and the single atom transition metal catalytic site are arranged so that there is electrical communication between the single atom transition metal catalytic site and the transition metal nanoparticle. A method of producing a catalyst of the invention is also provided, and used as an electrolysis catalyst. Further, an electrolyser for producing carbon monoxide (CO) from carbon dioxide (CO2) using the catalyst of the invention is provided.

Abstract: The present inventive concept is related to an Nb4N5 three-dimensional nanostructure with a nitrogen-doped NbO nanostructure, an Fe4N/Nb4N5 three-dimensional nanocomposite with a nitrogen-doped FeNbO nanostructure, preparation methods thereof, and a method for electrolysis of freshwater and seawater by means of a two-electrode cell composed of an Nb4N5 nanostructure electrode and an Fe4N/Nb4N5 nanocomposite electrode. The three-dimensional structured nanocatalyst according to the present inventive concept is economically viable because it has thermodynamic stability under alkaline HER conditions, does not require the use of expensive rare metals in industrial processes, and possesses excellent HER activity, making it a potential substitute for Pt. Moreover, it can provide a low electrical barrier as well as great electrochemical surface area, making it suitable to be designed as an industrial catalyst.

Abstract: An electrode includes a transparent substrate, and a layer of a nanostructured material at least partially covering a surface of the transparent substrate. The nanostructured material includes defective perovskite nanostructures (DPNSs) in the form of nanoplates having an average particle size in a range of 10 to 100 nanometers (nm), an interplanar spacing d(101) of the (101) plane in a range of 0.3 to 0.4 nm, and an interplanar spacing d(104) of the (104) plane in a range of 0.2 to 0.3 nm. A method of making the electrode.

Abstract: A method for making a catalyst comprises providing an initial compound having a perovskite lattice structure according to formula I M1M2M3O3 ??FORMULA I, where M1 is about 1 relative elemental ratio strontium (Sr); M2 is from greater than 0 to 0.7 relative elemental ratio and is selected from cobalt (Co), scandium (Sc), iron (Fe), nickel (Ni), and titanium (Ti); and M3 is 0.3 to 0.6 relative elemental ratio iridium (Ir). Initial exemplary compounds include SrSc0.5Ir0.5O3 (SSI) and SrCo0.5Ir0.5O3 (SCI). M1 and/or M2 cations are selectively leached from the initial compound to produce a catalyst having substantially increased catalytic performance. Cycling SSI or SCI in an acid produces SSI-H or SCI-H; cycling SSI or SCI in a base produces SSI-OH or SCI-OH. Dual-site metal leaching induced catalytic activity improvement by about 2 orders of magnitude, making reconstructed SrCo0.5Ir0.5O3 among the best-known catalysts for water oxidation in an acidic condition.

Abstract: The present invention relates, in a first aspect, to a dividing wall W suitable for use in an electrolysis cell E. The dividing wall W comprises a frame element R that forms an edge element RR and a separating element RT. The frame element R comprises two opposite parts R1 and R2, with at least two alkali metal cation-conducting solid-state electrolyte ceramics FA and FB disposed therebetween. The separating element RT lies between alkali metal cation-conducting solid-state electrolyte ceramics encompassed by the dividing wall W and separates these from one another. It is a feature of the invention that the two parts R1 and R2 are secured to one another by at least one securing element BR at the edge element RR and at least one securing element BT at the separating element RT.

Abstract: The following disclosure relates to electrochemical or electrolytic cells. fuel cells. and components thereof. More specifically. the following disclosure relates to applying an intermediate layer, coating layer, or sacrificial layer on a porous transport layer (PTL). A catalyst layer may be applied to the applied intermediate layer. The catalyst layer serves as both a protective passivation layer for the PTL and an oxygen evolution reaction electrocatalyst and the intermediate layer can have a portion removed.

Abstract: An alternating current (AC) impedance spectroscopy method includes providing an AC impedance spectroscopy ripple from power electronics into an electrochemical device, and absorbing the ripple in the power electronics.

Abstract: An electrolytic synthesis system is equipped with an electrolysis device, a synthesis device, a gas adsorption type storage battery, and a control device. The gas adsorption type storage battery adsorbs, to electrodes thereof, carbon dioxide gas within the atmosphere during charging, and releases the carbon dioxide gas that was adsorbed to the electrodes, during discharging. When an adsorption amount of the carbon dioxide gas adsorbed to the electrodes exceeds a predetermined first threshold value, the control device controls a discharging switch and thereby initiates discharging of the gas adsorption type storage battery.

Abstract: Herein disclosed is a new electrochemical approach to catalyst capture and recycling that overcomes conventional industrial recovery methods using functionalized redox-polymer electrodes. This technology provides a redox electro-separation system comprising polyvinylferrocene that was able to capture platinum group metal based catalysts directly from products and transfer to fresh reactants achieving 99.5% recovery without disturbing catalyst activity. Several reactions were tested along with various solvent-electrolyte matrices, showing >99% recovery efficiencies for platinum species as low as 1.6 ppm.

Abstract: It is disclosed an electrode body for the electrolytic production of a metal comprising a first portion for operatively connecting the electrode body to an electrolytic cell: a second portion, opposite the first portion; and a middle portion extending between the first and second portions. The body has a continuous external surface forming a round transition between the second and middle portions. The external surface of the middle portion comprises two opposite outer flat surfaces for facing surfaces of adjacent electrodes when the electrode is plunged into an electrolytic bath of the electrolytic cell comprising said adjacent electrodes. Preferably, the electrode is an anode and the anode body has a bore shape with a continuous external surface of the body wall. Preferably, the electrode body is made from a metal alloy, a ceramic or cermet material to form an inert or oxygen-evolving anode used for an eco-friendly production of aluminum.

Abstract: A white trivalent chromium plating bath including a trivalent chromium compound, a complexing agent, a sulfate serving as a conductive salt, a pH buffering agent, and one type or two or more types of sulfur-containing organic compounds represented by the following general formula (I) (in which R represents —H, —NH2, —OH, —CH3, —(CH2)n—CH3, or —(CH2)n—COOH, n represents an integer of 1 to 4, and X and Y each independently represent CH2, C?O, or C?S), and a white trivalent chromium plating method using the white trivalent chromium plating bath enable a high plating deposition rate in the trivalent chromium plating bath, and provide an appearance suitable for decorative applications.

Abstract: The present invention relates to an aqueous stripping composition for electrolytically removing a metal deposit from a substrate, the composition comprising (i) nitrate anions, (ii) one or more than one carboxylic acid and/or salts thereof, and (iii) one or more than one kind of halogen anions, wherein in the aqueous stripping composition (i) is the only nitrogen-containing species. The present invention furthermore relates to a respective use thereof and a respective method utilizing said aqueous stripping composition.

Abstract: To provide a thin plate-shaped single-crystal production equipment and a thin plate-shaped single-crystal production method capable of applying a large raw material lump while suppressing an increase in output of an infrared ray, and capable of continuously producing a thin plate-shaped single crystal in which a dopant concentration is an optimum composition and uniform at low cost with high accuracy.

Abstract: A method for accurately adjusting an automatic diameter control (ADC) camera includes before pulling a monocrystalline silicon ingot, obtaining a height variation value of an ADC camera from a solid-liquid interface of a melt by separately comparing variations of thermal field accessories provided corresponding to the monocrystalline silicon ingot and a previous monocrystalline silicon ingot. Based on a geometric relationship between the height variation value and a horizontal displacement of the ADC camera, a horizontal displacement of the ADC camera is obtained according to the height variation value, wherein the horizontal displacement is a first horizontal displacement or a second horizontal displacement. The method also includes moving the ADC camera horizontally to a target position according to the horizontal displacement of the ADC camera.

Abstract: A computer device includes at least one processor in communication with at least one memory device. The at least one processor is programmed to: a) receive at least one image of a silicon melt of a crystal in a crucible; b) execute a model trained to segment the at least one image into different classes; c) analyze segmentation to determine a quality of the crystal; and/or d) approve or reject the crystal based upon the analysis.

Abstract: An optical device includes a vanadium compensated, high resistivity, SiC single crystal of 6H or 4H polytype, for transmitting light having a wavelength in a range of from 420 nm to 4.5 ?m. The device may include a window, lens, prism, or waveguide. A system includes a source for generating light having a wavelength in a range of from 420 nm to 4.5 ?m, and a device for receiving and transmitting the light, where the device includes a vanadium compensated, high resistivity, SiC single crystal of 6H or 4H polytype. The disclosure also relates to crystals and methods for optical applications, including an aluminum doped SiC crystal having residual nitrogen and boron impurities, where the aluminum concentration is greater than the combined concentrations of nitrogen and boron, and where an optical absorption coefficient is less than about 0.4 cm?1 at a wavelength between about 400 nm to about 800 nm.

Abstract: A reflector for use in a semiconductor process chamber is provided including: a body; and a bottom plate connected to a lower portion of the body, the bottom plate having a bottom surface, a top surface, and one or more side surfaces connecting the bottom surface with the top surface. A cross section of the bottom plate that extends to opposing locations on the one or more side surfaces includes a center, the cross section is divided into two or more sectors that extend from the center of the cross section, and the cross section includes a cooling channel comprising an inlet and one or more outlets.

Abstract: An object is to provide a technique capable of increasing device characteristics. A crystal lamination structure includes a Ga2O3 single-crystal substrate having a first main surface. The crystal lamination structure includes a Ga2O3 single-crystal layer as an epitaxial growth layer provided on the first main surface of the Ga2O3 single-crystal substrate and having a second main surface on a side opposite to the Ga2O3 single-crystal substrate. A plane direction of the first main surface of the Ga2O3 single-crystal substrate is plane. A plane direction of the second main surface of the Ga2O3 single-crystal layer is plane.

Abstract: A method of producing an epitaxially coated semiconductor wafer of monocrystalline silicon, comprising: providing a melt of silicon in a crucible; pulling a single crystal of silicon from a surface of the melt with a pulling speed v by the CZ method, wherein oxygen and boron are incorporated into the single crystal and the concentration of oxygen in the single crystal is not less than 6.4×1017 atoms/cm3 and not more than 8.0×1017 atoms/cm3, and the resistivity of the single crystal is not less than 10 m?cm and not more than 25 m?cm, and wherein the melt is not dopes with nitrogen and/or carbon; applying a CUSP magnetic field to the melt during the pulling of the single crystal of silicon, surrounded by a heat shield; controlling the pulling speed v and an axial temperature gradient G at the phase boundary between the single crystal and the melt, in such a way that the quotient v/G is not less than 0.13 mm2/° C. min and not more than 0.20 mm2/° C.

Abstract: Methods of depositing a nanocrystalline diamond film are described. The method may be used in the manufacture of integrated circuits. Methods include treating a substrate with a plasma to form a treated substrate surface, incubating the treated substrate with a carbon-rich plasma to nucleate diamond particles on the treated substrate surface, followed by treating the substrate with a plasma to form a nanocrystalline diamond film. The resulting nanocrystalline diamond films are formed on an interfacial oxide-rich amorphous layer between the nanocrystalline diamond film and a silicon substrate.

Abstract: Silicon carbide (SiC) wafers and related methods are disclosed that include large diameter SiC wafers with wafer shape characteristics suitable for semiconductor manufacturing. Large diameter SiC wafers are disclosed that have reduced deformation related to stress and strain effects associated with forming such SiC wafers. As described herein, wafer shape and flatness characteristics may be improved by reducing crystallographic stress profiles during growth of SiC crystal boules or ingots. Wafer shape and flatness characteristics may also be improved after individual SiC wafers have been separated from corresponding SiC crystal boules. In this regard, SiC wafers and related methods are disclosed that include large diameter SiC wafers with suitable crystal quality and wafer shape characteristics including low values for wafer bow, warp, and thickness variation.

Abstract: A group-III nitride substrate includes: a first region having a first impurity concentration in a polished surface; and a second region having a second impurity concentration lower than the first impurity concentration in the polished surface, wherein a first dislocation density of the first region is lower than a second dislocation density of the second region.

Abstract: Device and method for immersed synthesis and continuous growth of phosphides under a magnetic field are disclosed in the field of semiconductor material preparation. In particular, device and method for synthesizing and growing semiconductor phosphides by means of immersing phosphorus into a metal melt under the action of a static magnetic field are disclosed. The device includes a furnace body, an injection synthesis system and a static magnetic field generator. The method includes A, heating the crucible to melt the metal and a covering material boron oxide in the crucible; B, immersing red phosphorus into the crucible; C, applying a static magnetic field surrounding the crucible, and adjusting the temperature gradient to start the synthesis; and D, performing crystal growth after completion of the synthesis.

Abstract: Provided are compositions and methods for preparing and identifying antibodies having CDR3s that vary in sequence and in length from very short to very long which in certain embodiments may bind to a carbohydrate moiety or the active site of an enzyme. Libraries coding for antibodies with the CDR3s are also provided. The libraries can be provided by modifying a pre-existing nucleic acid library.

Abstract: A method and processing facility for producing regenerated cellulosic fibers includes extruding a spinning solution into a coagulation bath which contains a salt and preferably an alkali to produce the fibers. The spinning solution may include cellulose dissolved in an aqueous solvent comprising NaOH and ZnO. The coagulation bath may have a pH-value of at least seven. The method may also include a continuous process of applying to the fibers in a never-dried state a crosslinking agent with two or more reactive groups and heating the fibers to a curing temperature while maintaining the never-dried condition to produce a reaction between the crosslinking agent and the cellulose of the fiber.

Abstract: Disclosed are a composition for an organic optoelectronic device including at least one kind of a first host compound represented by the Chemical Formula 1 and at least one kind of a second host compound represented by the Chemical Formula 2, and an organic optoelectronic device and a display device including the composition.

Abstract: A method for producing a yarn comprising the steps of: a. Selecting a filament core, comprising a plurality of polyester filaments, wherein the elongation at break of the polyester filaments of the filament core is in the range of 5% to 15%, more preferably between 10% and 12%, when tested with DIN ISO 2062; b. Selecting a staple fiber sheath, wherein at least 95% of the sheath is made of first staple fibers and second staple fibers, said first staple fibers being recycled cotton fibers, said second staple fibers being regenerated cellulosic fibers; c.

Abstract: A yarn comprising a filament core and a staple fiber sheath, the staple fiber sheath comprises at least 95% by weight of a blend of first fibers and second fibers. The first fibers are natural cellulosic fibers and the second fibers are regenerated cellulosic fibers, wherein the weight ratio of the first fibers to the second fibers is in the range of 70/30 to 80/20, the weight ratio preferably being about 75/25; the average length of the fibers of the sheath is in the range of 10 to 25 mm, preferably 12 mm to 20 mm; the 5% (n) index of the fibers of the sheath is between 25 mm and 40 mm, more preferably in the range between 28 and 36 mm; the short fiber content SFC(n) of the sheath is between 30% and 70%; and the filament core comprises a plurality of polyester filaments.

Abstract: A woven EMI sleeve has a wall with opposite edges extending lengthwise between opposite ends. The wall is wrapped about a central longitudinal axis into a tubular configuration bounding an enclosed cavity sized for receipt of an elongate member therein. The wall is woven with warp filaments extending generally parallel to the central longitudinal axis and weft filaments extending generally transversely to the warp filaments. The warp filaments include conductive filaments provided as wire filaments and separate non-conductive warp filaments. The weft filaments include heat-set filaments that are heat-formed to bias the wall into the tubular configuration and to bias opposite edges into overlapping relation with one another. The weft filaments also include conductive filaments.

Abstract: A knitted component comprises plush loops created with an inlaid yarn. A first surface of the knitted component includes a first yarn formed with a first stitch sequence that includes a quantity of knit stitches and a quantity of missed stitches. The second surface includes a second yarn formed with a second stitch sequence that includes a quantity of tuck stitches and a quantity of missed stitches. A third yarn is inlaid between two needle beds knitting the first and second yarns, and while the third yarn is inlaid, tuck stitches of the second yarn created with the previous pass of the carriage are transferred from one needle bed to another. Loops formed by the third yarn are locked into place by the transferred tuck stitches. The knitted component may be incorporated into an article of footwear. A method of manufacturing the knitted component is also described herein.

Abstract: The present disclosure relates to knits that can be used to make rip-resistant garments using an ultra-high molecular weight polyethylene (UHMWPE) fiber and a stretch fiber formed using a two-feed knitting technique.

Abstract: A circular knitting machine includes a needle-holding cylinder, having longitudinal grooves arranged around a central axis and housing a plurality of needles, and a needle-holding ring having radial grooves housing a plurality of holding-down sinkers, wherein each needle is paired with at least one respective adjacent sinker so as to form a needle-sinker assembly. Each needle-sinker assembly includes a pre-selection element paired with the respective needle and comprising a connecting portion and an activation element comprising an operating portion. The pre-selection element is vertically movable to a pre-selection configuration in which the connecting portion is engaged into a connecting seat defined in the sinker. The activation element is horizontally movable, towards the central axis, until acting upon the pre-selection element, so that the connecting portion causes in its turn a movement of the sinker in the radial groove towards the central axis, thus performing an activation of the sinker.

Abstract: A double raschel warp knitting machine including: a pair of frontside jacquard bars JB2, 3 and a pair of backside jacquard bars JB4, 5 as jacquard bars, in which each of the frontside jacquard bars JB2, 3 and the backside jacquard bars JB4, 5 is a half-gauge jacquard bar; and at least one frontside ground guide bar GB1 provided on the front side of the frontside jacquard bars JB2, 3 and at least one backside ground guide bar GB6, 7, 8 provided on the back side of the backside jacquard bars JB4, 5, as ground guide bars. The double raschel warp knitting machine is characterized in that the four half-gauge jacquard bars have jacquard guides at the same positions in the width direction of the knitting machine.