Processes Joining Independent Crystals Patents (Class 117/1)
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Patent number: 7297209Abstract: A method of forming an anisotropic crystal film, comprising providing a donor which comprises a base and an anisotropic crystal film bounded to the base, and a receptor. At least a portion of the anisotropic crystal film is placed in contact with the receptor. A loading is applied to at least a portion of the base, whereby providing shear and compressive stresses onto the donor and receptor, and transferring at least a portion of the anisotropic crystal film onto the receptor and delaminating the at least portion of the anisotropic crystal film from the base.Type: GrantFiled: December 18, 2003Date of Patent: November 20, 2007Assignee: Nitto Denko CorporationInventors: Pavel I. Lazarev, Michael V. Paukshto
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Patent number: 7250081Abstract: Methods for repair of single crystal superalloys by laser welding and products thereof have been disclosed. The laser welding process may be hand held or automated. Laser types include: CO2, Nd:YAG, diode and fiber lasers. Parameters for operating the laser process are disclosed. Filler materials, which may be either wire or powder superalloys are used to weld at least one portion of a single crystal superalloy substrate.Type: GrantFiled: December 4, 2003Date of Patent: July 31, 2007Assignee: Honeywell International, Inc.Inventors: Yiping Hu, William F. Hehmann, Murali Madhava
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Patent number: 7247545Abstract: A method of fabricating a low defect germanium thin film includes preparing a silicon wafer for germanium deposition; forming a germanium film using a two-step CVD process, annealing the germanium thin film using a multiple cycle process; implanting hydrogen ions; depositing and smoothing a layer of tetraethylorthosilicate oxide (TEOS); preparing a counter wafer; bonding the germanium thin film to a counter wafer to form a bonded structure; annealing the bonded structure at a temperature of at least 375° C. to facilitate splitting of the bonded wafer; splitting the bonded structure to expose the germanium thin film; removing any remaining silicon from the germanium thin film surface along with a portion of the germanium thin film defect zone; and incorporating the low-defect germanium thin film into the desired end-product device.Type: GrantFiled: November 10, 2004Date of Patent: July 24, 2007Assignee: Sharp Laboratories of America, Inc.Inventors: Jer-Shen Maa, Jong-Jan Lee, Douglas J. Tweet, Sheng Teng Hsu
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Patent number: 7201799Abstract: An automated, non-invasive method for classifying, detecting, and counting micropipes contained within silicon wafers, and generally any assortment of transparent wafers. Classifying, detecting, and counting micropipes takes place through the use of a data processing algorithm that incorporates information regarding: defect size; pit signature; area of pit signature when comparing a topography, specular, or scatter images; and detecting a tail within the standard pit signature. The method of the present invention teaches the development of a topography defect map, specular defect map, and scatter defect map for a complete analysis of the surface of a particular transparent wafer. Conventional detection, classification, and counting of micropipes involve characterization of micropipes in a manual fashion and rely upon an extremely invasive form of sample preparation.Type: GrantFiled: November 24, 2004Date of Patent: April 10, 2007Assignee: KLA-Tencor Technologies CorporationInventor: Vamsi Velidandla
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Patent number: 7192821Abstract: Exemplary embodiments discourage or prevent impurities from mixing in a film of a semiconductor layer in a manufacturing process of a semiconductor device. A manufacturing process of a semiconductor device includes first forming a semiconductor layer, second removing hydrogen from inside the semiconductor layer, and third terminating by combining elements such as hydrogen with a surface of the semiconductor layer through exposure to hydrogen plasma and the like. At least the second removing and the third terminating are consecutively performed under an environment isolated from air. According to this process, it is possible to prevent or discourage impurities contained in air and the like from combining on the surface of the semiconductor film. It is possible to discourage or prevent impurities from mixing (diffusing) in the semiconductor layer in crystallization through irradiation by light following the third terminating.Type: GrantFiled: February 22, 2005Date of Patent: March 20, 2007Assignee: Seiko Epson CorporationInventor: Kazuyuki Miyashita
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Patent number: 7175704Abstract: A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high pressure apparatus, for processing under reaction conditions of sufficiently high pressure and high temperature for a time adequate for one or more of removing defects or relieving strain in the single crystal.Type: GrantFiled: June 5, 2003Date of Patent: February 13, 2007Assignee: Diamond Innovations, Inc.Inventors: Mark Philip D'Evelyn, Thomas Richard Anthony, Stephen Daley Arthur, Lionel Monty Levinson, John William Lucek, Larry Burton Rowland, Suresh Shankarappa Vagarali
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Patent number: 7172655Abstract: A method of producing a single crystal CVD diamond of a desired color which includes the steps of providing single crystal CVD diamond which is colored and heat treating the diamond under conditions suitable to produce the desired color. Colors which may be produced are, for example, in the pink-green range.Type: GrantFiled: September 5, 2003Date of Patent: February 6, 2007Inventors: Daniel James Twitchen, Philip Maurice Martineau, Geoffrey Alan Scarsbrook
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Patent number: 7077900Abstract: Disclosed is a method of fabricating a photonic crystal fiber preform using an extrusion die, comprising the step of extruding a first optical material into a plurality of dispersed phases to axially orient the dispersed phases.Type: GrantFiled: June 12, 2002Date of Patent: July 18, 2006Assignee: Samsung Electronics Co. Ltd.Inventor: Joon Yong Park
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Patent number: 7029528Abstract: There are provided a method of superflattening an oxide crystal that is soluble neither with acid nor with alkaline, a method of making a ReCa4O(BO3)3 family oxide single crystal thin film using the superflattening method, a ReCa4O(BO3)3 family oxide single crystal thin film having a SHG property, a superflattening method for light incident/emitting surfaces, and a defect assessing method for oxide crystals. The surface of an oxide crystal that is soluble neither with acid nor with alkaline is reduced with a reducing agent, the reduced oxide crystal surface is dissolved with an aqueous solution of acid or alkaline, the surface dissolved oxide crystal is heat-treated in the atmosphere, whereby the surface of an oxide crystal that is soluble neither with acid nor with alkaline is superflattened to an atomic level.Type: GrantFiled: March 15, 2002Date of Patent: April 18, 2006Assignee: Japan Science and Technology CorporationInventors: Hideomi Koinuma, Yuji Matsumoto, Takatomo Sasaki, Yusuke Mori, Masashi Yoshimura
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Patent number: 7018549Abstract: A method is described for fabricating multiple nanowires of uniform length from a single precursor nucleation particle. The method includes growing a first nanowire segment from a nanoparticle and growing a second nanowire segment between the first nanowire segment and the nanoparticle. The first nanowire segment and the second nanowire segment have a different solubility.Type: GrantFiled: December 29, 2003Date of Patent: March 28, 2006Assignee: Intel CorporationInventors: Matthew V. Metz, Scott A. Hareland, Robert S. Chau
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Patent number: 6972051Abstract: A single crystal M*N article, which may be made by a process including the steps of: providing a substrate of material having a crystalline surface which is epitaxially compatible with M*N; depositing a layer of single crystal M*N over the surface of the substrate; and removing the substrate from the layer of single crystal M*N, e.g., with an etching agent which is applied to the substrate to remove same, to yield the layer of single crystal M*N as said single crystal M*N article. The bulk single crystal M*N article is suitable for use as a substrate for the fabrication of microelectronic structures thereon, to produce microelectronic devices comprising bulk single crystal M*N substrates, or precursor structures thereof.Type: GrantFiled: August 14, 2001Date of Patent: December 6, 2005Assignee: Cree, Inc.Inventors: Michael A. Tischler, Thomas F. Kuech, Robert P. Vaudo
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Patent number: 6926770Abstract: The present invention relates to a method to control the nucleation and transverse motion of 180° inverted domains in ferroelectric nonlinear crystals. It includes a process composing of a high temperature oxidation of the first metal layer and a pulsed field poling of the second electrodes. The main object of present invention is to provide domain inversion of ferroelectric nonlinear crystals with field control the nucleation and transverse motion of inverted domains and two-dimension nonlinear photonic crystals for time-domain multiple-wave simultaneous lasers and space filter function. Another object of present invention is to provide space-charge effect for screened edge field beneath the metal electrode, The other object of present invention is to provide the constraint of inverted domain nucleation in the oxidized electrode for arbitrarily geometrical form of 2D ferroelectric lattice structure.Type: GrantFiled: May 9, 2003Date of Patent: August 9, 2005Assignee: National Taiwan UniversityInventors: Lung-Han Peng, Way-Seen Wang, Shu-Mei Tsan, Yi-Chun Shih, Yung-Chang Zhang, Chao-Ching Hsu
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Patent number: 6875268Abstract: A method of preparing a surface of a substrate for bonding by removing oxide and altering the atomic surface of the substrate is described. The method comprises, providing a substrate comprised of a plurality of elements. The substrate is held at an elevated temperature and an over-pressure of gas is allowed to flow over the surface of the substrate. The gas over-pressure is comprised of an element found in the plurality of elements. Holding the substrate at an elevated temperature helps removes essentially all the oxide on the surface of the substrate. However, the elevated temperatures also evaporate certain atoms on the substrate surface and cause other atoms on the substrate surface to migrate. Flowing a gas over the surface of the substrate, helps to replace the atoms which have evaporated thereby preventing movement of other atoms. After removing the oxide, the substrate is allowed to cool.Type: GrantFiled: September 19, 2002Date of Patent: April 5, 2005Assignee: HRL Laboratories, LLCInventor: Binqiang Shi
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Publication number: 20040250745Abstract: This invention provides PEG-modified semiconductor nanoparticles of which fluorescence intensity is effectively inhibited from lowering, which are capable of forming a stable dispersion in water, and which are capable of bonding easily with biomolecules having specific recognition, as well as methods for conveniently preparing such nanoparticles, and a material for biological diagnosis. The water-soluble PEG-modified semiconductor nanoparticles of the present invention includes a structure having PEG of a number average molecular weight of 300 to 20000 having a thiol group at one end, bonded via cadmium to II-VI semiconductor nanocrystals of a core-shell structure having a ZnX (wherein X stands for O, S, Se, or Te) shell.Type: ApplicationFiled: March 26, 2004Publication date: December 16, 2004Applicant: NOF CorporationInventors: Atsuhiko Ogura, Eui-chul Kang, Kazunori Kataoka, Yukio Nagasaki
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Publication number: 20040226501Abstract: Provided is a method for crystallization and purification of a macrolide such as tacrolimus, sirolimus, pimecrolimus, or everolimus that includes the step of providing a combination of a macrolide, and a polar solvent, dopolar aprotic solvent, or hydrocarbon solvent at pH of 7 or above.Type: ApplicationFiled: March 31, 2004Publication date: November 18, 2004Inventors: Vilmos Keri, Andrea Csorvasi
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Patent number: 6797250Abstract: In an optical element which includes a single crystal having at least one flat light-transmitting end surface, the at least one light-transmitting end surface is inclined at at least 0.5 degrees relative to a plane perpendicular to one of an a-axis and a c-axis of the single crystal. In a process of producing such an optical element, a single crystal is cut out so that the single crystal has at least one surface which is inclined at at least 0.5 degrees relative to a plane perpendicular to one of an a-axis and a c-axis of the single crystal, and then the at least one surface is polished into at least one light-transmitting end surface.Type: GrantFiled: March 6, 2003Date of Patent: September 28, 2004Assignee: Fuji Photo Film Co., Ltd.Inventor: Takayuki Katoh
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Publication number: 20040139908Abstract: Small crystals are made by mixing a solution of a desired substance with an anti-solvent in a fluidic vortex mixer in which the residence time is less than 1 s, for example 10 ms. The liquid within the fluidic vortex mixer (12) is subjected to high intensity ultrasound from a transducer (20, 22) in or on the wall of the mixer, or coupled to a pipe supplying liquid to the mixer. The solution very rapidly becomes supersaturated, and the ultrasound can induce a very large number of nuclei for crystal growth. Small crystals, for example less than 5 &mgr;m, are formed that may be of a suitable sise for use in inhalers.Type: ApplicationFiled: October 27, 2003Publication date: July 22, 2004Inventors: Michael Joseph Bowe, John William Stairmand, Linda Jane McCausland
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Publication number: 20040129199Abstract: A crystallization parameter optimization process includes self-learning programs based on neural networks or smart algorithms that divine optimal crystallization conditions. The operation of these programs is ideally coupled with a high throughput automated crystallization experiment system. Through the use of successful as well as unsuccessful crystallization experimental samples, the programs are efficiently able to predict optimal crystallization variables after sampling only a modest fraction of all possible variable permutations.Type: ApplicationFiled: September 19, 2003Publication date: July 8, 2004Inventors: David T. Hamrick, Lawrence W. Cosenza, Nikolai Chernov
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Patent number: 6740159Abstract: A method of making a fracture-resistant large-size calcium fluoride single crystal is described, which is suitable for an optical component for radiation in the far UV range. The calcium fluoride raw material for the single crystal is first melted and subsequently solidified by cooling the melt to form a single crystal. However the calcium fluoride raw material is doped with from 1 to 250, preferably 1 to 100, ppm of strontium, preferably added as strontium fluoride, and contains from 1 to 10 ppm of sodium as well as up to 100 ppm of other impurities.Type: GrantFiled: August 28, 2002Date of Patent: May 25, 2004Assignees: Schott Glas, Carl Zeiss SMT AGInventors: Joerg Kandler, Ewald Moersen, Burkhard Speit, Harry Bauer, Thure Boehm, Eric Eva, Michael Thier, Hexin Wang, Frank Richter, Hans-Josef Paus
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Publication number: 20040050316Abstract: A 2.2 Å crystal structure of rabbit AMP deaminase, an integral enzyme of purine nucleotide interconversion, has been determined, in an unligated state and with an inhibitor bound. The present invention further discloses the use of x-ray crystallographic data for identification and construction of possible therapeutic compounds in the treatment of various disease conditions. The sequence of rabbit AMP deaminase is also disclosed.Type: ApplicationFiled: December 13, 2001Publication date: March 18, 2004Inventors: Richard John Bazin, Graeme Arthur MacDonald, Christopher Phillips
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Publication number: 20040035353Abstract: A substrate adapted to the chemical grafting of an ordered molecular monolayer, formed of a crystal, the lattice of which comprises a hydroxyl group, this crystal being cleavable so that hydroxyl groups appear in the cleavage plane, and belonging to the group comprising topaz and diaspore.Type: ApplicationFiled: May 27, 2003Publication date: February 26, 2004Inventors: Pierre Terech, Francois Rieutord, Bernd Struth
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Publication number: 20040031434Abstract: This invention is a method of making a synthetic gem comprising elements recovered from remains of a species of the Kingdom Animalia, comprising the steps of collecting substantially pure carbon from the remains and creating gems from the carbon using crystal growth sublimation.Type: ApplicationFiled: August 19, 2003Publication date: February 19, 2004Inventors: Russell P. VandenBiesen, Gregory R. Herro, Dean T. VandenBiesen
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Patent number: 6692569Abstract: A modified PbZrTiO3 perovskite crystal material thin film, wherein the PbZrTiO3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta. The perovskite crystal thin film material may be formed by liquid delivery MOCVD from metalorganic precursors of the metal components of the thin film, to form PZT and PSZT, and other piezoelectric and ferroelectric thin film materials. The thin films of the invention have utility in non-volatile ferroelectric memory devices (NV-FeRAMs), and in microelectromechanical systems (MEMS) as sensor and/or actuator elements, e.g., high speed digital system actuators requiring low input power levels.Type: GrantFiled: August 27, 2001Date of Patent: February 17, 2004Assignee: Advanced Technology Materials, IncInventors: Jeffrey F. Roeder, Ing-Shin Chen, Steven Bilodeau, Thomas H. Baum
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Patent number: 6692567Abstract: A seismic weigh-in-motion system (12) which utilizes a seismic sensor (32) mounted, off-pavement of the highway prior to the point at which the truck (10) enters the deceleration lane at the truck weighing station. The sensor (32) senses seismic vibrations which are transferred into the ground by the moving truck (10). Signals indicative of these vibrations are transmitted through a fiber optic cable (44) connected to a main processor (42) mounted in the weigh-in station. These vibration signals along with signals proportional to the speed of the truck (determined by speed detecting devices/processes (34, 36)) as the truck moves down the highway is processed in the processor (42) to provide an output which is indicative of the weight of the truck. Additional components such as soil temperature (28) and soil moisture content (30) measuring devices provide additional inputs to the processor (42) to increase accuracy of the system.Type: GrantFiled: March 20, 2002Date of Patent: February 17, 2004Assignee: VorTek LLCInventors: Frank B. Tatom, George W. Herndon
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Publication number: 20040011278Abstract: The invention relates to a tetragonal single crystal (1, 11) of composition:Type: ApplicationFiled: May 6, 2003Publication date: January 22, 2004Inventor: Vitali Tatartchenko
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Patent number: 6656267Abstract: A crystallization tray includes a plurality of crystallization cells, each cell having a reservoir adapted to receive an equilibrating solution, a shelf located adjacent to the reservoir and adapted for use as a temporary cryogenic holding area for a crystallized substance and/or a sample holding area, and a sample drop receptacle carried by the shelf and adapted to receive a sample drop including a crystallizable substance. A related method for forming macromolecular crystals includes dispensing an equilibrating solution in the reservoirs, dispensing a plurality of macromolecular solution droplets in the sample drop receptacles, covering the cells with a cover; and crystallizing the crystallizable substance by vapor diffusion.Type: GrantFiled: July 10, 2001Date of Patent: December 2, 2003Assignee: Structural Genomix, Inc.Inventor: Janet Newman
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Publication number: 20030159641Abstract: The invention provides a crystallizing method and an apparatus for producing a biopolymer capable of simplifying operations for taking out a produced crystal and mounting the crystal onto a crystal structure analyzer, thereby improving efficiency in the operations as well as reducing a labor burden. A crystallizing apparatus for producing a biopolymer crystal from a solution containing a biopolymer includes a crystal-growing chip 10 made of a material allowing electromagnetic waves to permeate through the chip, and in which a circular frame 16 is formed to retain a droplet 20 of a solution containing a biopolymer and a biopolymer crystal 28 produced in the droplet.Type: ApplicationFiled: February 10, 2003Publication date: August 28, 2003Applicant: Protein Wave Corporation, RIKENInventors: Akira Sanjoh, Nobuo Kamiya, Takaaki Hikima
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Publication number: 20030150372Abstract: The present invention provides a method and apparatus for selectively destroying dividing cells in living tissue formed of dividing cells and non-dividing cells. The dividing cells contain polarizable intracellular members and during late anaphase or telophase, the dividing cells are connected to one another by a cleavage furrow. According to the present method the living tissue is subjected to electric field conditions sufficient to cause movement of the polarizable intracellular members toward the cleavage furrow in response to a non-homogenous electric field being induced in the dividing cells. The non-homogenous electric field produces an increased density electric field in the region of the cleavage furrow. The movement of the polarizable intracellular members towards the cleavage furrow causes the break down thereof which results in destruction of the dividing cells, while the non-dividing cells of the living tissue remain intact.Type: ApplicationFiled: October 16, 2002Publication date: August 14, 2003Inventor: Yoram Palti
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Patent number: 6589334Abstract: The present invention relates to photonic band gap (PBG) materials and more specifically, it describes a new type of photonic crystal structure which exhibits a large and complete three-dimensional PBG. This PBG is highly robust to the effects of disorder. The photonic crystal has a tetragonal or hexagonal lattice symmetry and is comprised of a lattice of polygonal spiral posts of a high refractive Index material in a low index background. The corresponding inverse structure comprises a lattice of low refractive index posts in a high refractive index background also has a very large PBG. These new photonic crystals exhibit very large (up to 23.6% when made of silicon and nearly 29% when made of germanium) complete 3D photonic band gaps. The posts exhibit a spiral profile and all the spiral posts wind in phase with each other. The identity of the winding phase from one post to the next makes the present invention amenable to micro-fabrcation using the Glancing Angle Deposition (GLAD).Type: GrantFiled: November 19, 2001Date of Patent: July 8, 2003Inventors: Sajeev John, Ovidiu Toader
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Patent number: 6589335Abstract: A method of processing semiconductor materials and a corresponding semiconductor structure, including providing a virtual substrate of a GaAs epitaxial film on a Si substrate, and epitaxially growing a relaxed graded layer of InxGa1−xAs at a temperature ranging upwards from about 600° C. with a subsequent process for planarization of the InGaAs alloy.Type: GrantFiled: February 8, 2001Date of Patent: July 8, 2003Assignee: AmberWave Systems CorporationInventors: Mayank Bulsara, Eugene A. Fitzgerald
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Patent number: 6558465Abstract: In an optical element which includes a single crystal having at least one flat light-transmitting end surface, the at least one light-transmitting end surface is inclined at at least 0.5 degrees relative to a plane perpendicular to one of an a-axis and a c-axis of the single crystal. In a process of producing such an optical element, a single crystal is cut out so that the single crystal has at least one surface which is inclined at at least 0.5 degrees relative to a plane perpendicular to one of an a-axis and a c-axis of the single crystal, and then the at least one surface is polished into at least one light-transmitting end surface.Type: GrantFiled: March 31, 2000Date of Patent: May 6, 2003Assignee: Fuji Photo Film Co., Ltd.Inventor: Takayuki Katoh
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Patent number: 6544330Abstract: A bonded, walk-off compensated crystal, for use with optical equipment, and methods of making optical components including same.Type: GrantFiled: February 14, 2001Date of Patent: April 8, 2003Assignee: The United States of America as represented by the Department of EnergyInventor: Christopher A. Ebbers
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Publication number: 20030056712Abstract: An N-9-position alkylated form is selectively precipitated by subjecting a mixture containing the N-9-position alkylated form and an N-7-position alkylated form of 2-amino-6-halopurine to a crystallization step using a mixed solvent of an organic solvent and water. Then, this N-9-position alkylated form is reduced to give famciclovir. By this method of the present invention, famciclovir known as an antiviral agent, and an intermediate compound therefor can be efficiently produced.Type: ApplicationFiled: August 30, 2002Publication date: March 27, 2003Applicant: AJINOMOTO CO., INCInventors: Toyoto Hijiya, Takayoshi Torii, Kunisuke Izawa
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Patent number: 6527856Abstract: A method for changing the surface termination of a perovskite substrate surface, an example of which is the conversion of B-site terminations of a single-crystal STO substrate to A-site terminations. The method generally comprises the steps of etching the substrate surface by applying a reactive plasma thereto in the presence of fluorine or another halogen, and then annealing the substrate at a temperature sufficient to regenerate a long range order of the surface, i.e., the surface termination contributes to a better long range order in a film epitaxially grown on the surface. More particularly, the resulting substrate surfaces predominantly contains A-site surface terminations, i.e., SrO for STO (100) substrates. As a result, disadvantages associated with B-site terminated perovskite substrate surfaces are avoided. A suitable etching treatment is a low power oxygen ashing in the presence of low halogen levels.Type: GrantFiled: February 22, 2001Date of Patent: March 4, 2003Assignee: International Business Machines CorporationInventors: David W. Abraham, Matthew Copel, James Misewich, Alejandro G. Schrott, Ying Zhang
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Publication number: 20030031669Abstract: A conjugate of a toxin and a cytokine, and a fusion protein comprising a bispecific antibody that has a first specificity for a cell marker specific to a malignant cell and a second specificity for a region of IL-15&agr;, each optionally further comprising a radionuclide, are useful therapeutic reagents for treating leukemias and lymphomas.Type: ApplicationFiled: April 8, 2002Publication date: February 13, 2003Applicant: IMMUNOMEDICS, INC.Inventor: David M. Goldenberg
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Publication number: 20030000453Abstract: An optical element and a manufacturing method therefor, an exposure apparatus, and a device manufacturing method that can reduce the effect of intrinsic birefringence under high NA conditions. According to an optical element as one aspect of the present invention, an angle between a [0 0 1] axis of an isometric crystal and an optical axis is less than 10°, and preferably 0°.Type: ApplicationFiled: August 22, 2001Publication date: January 2, 2003Inventors: Yasuyuki Unno, Seiji Takeuchi
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Patent number: 6491889Abstract: A ferroelectric single crystal having the composition of formula (I) has a high Piezoelectric constant together with good electromechanical and electrooptical properties and it can be prepared in a size of 5 cm in diameter or greater, useful for preparing various devices: x(A)y(B)z(C)-p(P)n(N); (I) wherein, (A) is Pb(Mg⅓ Nb⅔)O3 or Pb(Zn⅓Nb⅔)O3, (B) is PbTiO3, (C) is LiTaO3, (P) is a metal selected from the group consisting of Pt, Au, Ag, Pd and Rh, (N) is an oxide of a metal selected from the group consisting of Ni, Co, Fe, Sr, Sc, Ru, Cu and Cd, x is a number in the range of 0.65 to 0.98, y is a number in the range fo 0.01 to 0.34, z is a number in the range of 0.01 to 0.1, and p and n are each independently a number in the range of 0.01 to 5.Type: GrantFiled: March 30, 2001Date of Patent: December 10, 2002Assignee: Ibule Photonics Co., Ltd.Inventors: Sang-Goo Lee, Sung-Min Rhim, Min-Chan Kim
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Patent number: 6488767Abstract: A high quality wafer comprising AlxGayInzN, wherein 0<y≦1 and x+y+z=1, characterized by a root mean square surface roughness of less than 1 nm in a 10×10 &mgr;m2 area at its Ga-side. Such wafer is chemically mechanically polished (CMP) at its Ga-side, using a CMP slurry comprising abrasive particles, such as silica or alumina, and an acid or a base. The process of fabricating such high quality AlxGayInzN wafer may include steps of lapping, mechanical polishing, and reducing internal stress of said wafer by thermal annealing or chemical etching for further enhancement of its surface quality. The CMP process is usefully employed to highlight crystal defects on the Ga-side of the AlxGayInzN wafer.Type: GrantFiled: June 8, 2001Date of Patent: December 3, 2002Assignee: Advanced Technology Materials, Inc.Inventors: Xueping Xu, Robert P. Vaudo
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Patent number: 6451109Abstract: A process for manufacturing columnar crystals of 6-hydroxy-2-naphthoic acid comprising the steps of, dissolving crude 6-hydroxy-2-naphthoic acid product in an aqueous solvent, adding crystalline 3-hydroxy-2,7-naphthoic acid or columnar crystals as seed crystals, and cooling the mixture to precipitate the desired crystals. The present invention further provides columnar crystals of 6-hydroxy-2-naphthoic acid which have X-ray diffraction peaks 2&thgr; in 16.8-17.8 and/or 21.3-22.3.Type: GrantFiled: April 24, 2001Date of Patent: September 17, 2002Assignee: Kabushiki Kaisha Ueno Seiyaku Oyo KenkyujoInventors: Ryuzo Ueno, Masaya Kitayama, Hiroyuki Kato, Ryoichi Otsuka
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Publication number: 20020124790Abstract: A method for preparing a layered perovskite compound thin film having a film thickness and structure controlled at a monomolecular layer and capable of combining various layered perovskite compounds at the level of a monomolecular layer. The method a superlattice structure represented by the general formula A2MX4 where A is an organic ammonium molecule, M is a group 4 element or transition metal and X is halogen layers of organic ammonium molecule “A” and layers of inorganic halide “MX4” are alternately stacked. A monomolecular film of an organic amine hydrohalic acid salt having a long-chain alkyl group is spread out on the surface of a water solution of an inorganic halide MX2 and a methylamine hydrohalic acid salt. By leaving the monomolecular film, a layered perovskite compound monomolecular film is formed on the surface of the water solution.Type: ApplicationFiled: April 9, 2002Publication date: September 12, 2002Inventor: Masanao Era
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Publication number: 20020102428Abstract: The periodic stress and strain fields produced by a pure twist grain boundary between two single crystals bonded together in the form of a bicrystal are used to fabricate a two-dimensional surface topography with controllable, nanometer-scale feature spacings (e.g., from 50 nanometers down to 1.5 nanometers). The spacing of the features is controlled by the misorientation angle used during crystal bonding. One of the crystals is selected to be thin, on the order of 5-100 nanometers. A buried periodic array of screw dislocations is formed at the twist grain boundary. To bring the buried periodicity to the surface, the thin single crystal is etched to reveal an array of raised elements, such as pyramids, that have nanometer-scale dimensions. The process can be employed with numerous materials, such as gold, silicon and sapphire. In addition, the process can be used with different materials for each crystal such that a periodic array of misfit dislocations is formed at the interface between the two crystals.Type: ApplicationFiled: November 8, 2001Publication date: August 1, 2002Inventors: Stephen L. Sass, Christopher K. Ober, Yuri Suzuki
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Patent number: 6416575Abstract: A lightwave circuit, by which the degree of integration can be further improved by employing a multilayered structure of wiring, is disclosed. The disclosed photonic crystal multilayer substrate has portions, each portion having a slab-waveguide type photonic crystal structure, multilayered in the direction of the thickness of the substrate. In the photonic crystal structure, a photonic crystal layer is disposed between cladding layers; the photonic crystal layer is made of a photonic crystal having a two or three dimensional periodically modulated structure with respect to the effective refractive index in the order of optical wavelengths; and each cladding layer is made of a material whose effective refractive index differs from the effective refractive index of the photonic crystal layer.Type: GrantFiled: June 28, 2001Date of Patent: July 9, 2002Assignee: NEC CorporationInventor: Hirohito Yamada
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Patent number: 6413442Abstract: A method of producing a single crystal of the composition M3NbGa3Si2O14 (where M is an alkaline earth metal) comprising growing in a lattice direction inclined at an angle of 50.8 to 90 degrees from a [001] axis. The single crystal obtained in this way may be suitably used as a component of a resonator, filter, or other various piezoelectric elements.Type: GrantFiled: May 21, 2001Date of Patent: July 2, 2002Assignee: TDK CorporationInventors: Jun Sato, Katsumi Kawasaki
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Publication number: 20020078880Abstract: The present invention relates to single crystal silicon, in ingot or wafer form, which contains an axially symmetric region in which vacancies are the predominant intrinsic point defect and which is substantially free of agglomerated vacancy intrinsic point defects, wherein the first axially symmetric region has a width which is at least about 50% of the length of the radius of the ingot, and a process for the preparation thereof.Type: ApplicationFiled: October 24, 2001Publication date: June 27, 2002Applicant: MEMC Electronic Materials, Inc.Inventors: Robert J. Falster, Joseph C. Holzer, Steve A. Markgraf, Paolo Mutti, Seamus A. McQuaid, Bayard K. Johnson
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Patent number: 6387177Abstract: The present invention relates to a method for manufacturing a crystal with at least two segments, wherein adjacent segments differ by at least one characteristic. The different segments can, for example, be of different materials, or have a different doping agent. The method makes possible the manufacturing of segmented crystals with high crystal quality, and as planar joining surfaces between the individual segments as possible. This is achieved in that the segmented crystal is grown directly from the molten mass.Type: GrantFiled: July 31, 2000Date of Patent: May 14, 2002Assignee: Forschunginstitut fur mineralische und metallische Werkstoffe Edelsteine/Edelmetalle GmbHInventor: Lothar Ackermann
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Publication number: 20020028314Abstract: A single crystal M*N article, which may be made by a process including the steps of: providing a substrate of material having a crystalline surface which is epitaxially compatible with M*N: depositing a layer of single crystal M*N over the surface of the substrate; and removing the substrate from the layer of single crystal M*N, e.g., with an etching agent which is applied to the substrate to remove same, to yield the layer of single crystal M*N as said single crystal M*N article. The bulk single crystal M*N article is suitable for use as a substrate for the fabrication of microelectronic structures thereon, to produce microelectronic devices comprising bulk single crystal M*N substrates, or precursor structures thereof.Type: ApplicationFiled: August 14, 2001Publication date: March 7, 2002Inventors: Michael A. Tischler, Thomas F. Kuech, Robert P. Vaudo
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Publication number: 20020014196Abstract: A lead-free piezoelectric ceramic material is provided having a large piezoelectric strain constant which exhibits low temperature dependence. The piezoelectric ceramic material includes Ba, Bi, Na, Ti, and O, in the molar ratio of: 0.997≦Bi/Na≦1.003, and Ba/Bi=2x/(a-x) wherein 0.99≦a≦1.01, 0<x<a. The piezoelectric ceramic material may be employed for producing piezoelectric devices such as oscillators, actuators, sensors and filters.Type: ApplicationFiled: February 9, 2001Publication date: February 7, 2002Inventors: Masanori Takase, Kazushige Ohbayashi
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Publication number: 20020007778Abstract: An alloy composition suitable for use as a single crystal seed comprises nickel and, in the proportion of 5 to 50 weight %, a further metal selected from the Transition Series of elements in Period VI of the Periodic Table of Elements. The further metal may be tungsten or tantalum. The alloy composition contains no component which forms an oxide layer at elevated temperatures, and in particular contains no aluminium or titanium. The alloy composition is suitable for use as a seed alloy for the casting of single crystal components such as aerofoils for gas turbine engines.Type: ApplicationFiled: May 18, 2001Publication date: January 24, 2002Applicant: ROLLS-ROYCE PLC.Inventors: David A. Ford, Anthony D. Hill
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Publication number: 20020007779Abstract: The present invention relates to single crystal silicon, in ingot or wafer form, which contains an axially symmetric region which is free of agglomerated intrinsic point defects, and a process for the preparation thereof. The process for growing the single crystal silicon ingot comprises controlling (i) a growth velocity, v, (ii) an average axial temperature gradient, G0, during the growth of a constant diameter portion of the crystal over a temperature range from solidification to a temperature of no less than about 1325° C., and (iii) a cooling rate of the crystal from a solidification temperature to about 1,050° C., in order to cause the formation of an axially symmetrical segment which is substantially free of agglomerated intrinsic point defects.Type: ApplicationFiled: December 30, 1999Publication date: January 24, 2002Inventors: LUCIANO MULE'STAGNO, ROBERT FALSTER
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Publication number: 20020002942Abstract: A method for changing the surface termination of a perovskite substrate surface, an example of which is the conversion of B-site terminations of a single-crystal STO substrate to A-site terminations. The method generally comprises the steps of etching the substrate surface by applying a reactive plasma thereto in the presence of fluorine or another halogen, and then annealing the substrate at a temperature sufficient to regenerate a long range order of the surface, i.e., the surface termination contributes to a better long range order in a film epitaxially grown on the surface. More particularly, the resulting substrate surfaces predominantly contains A-site surface terminations, i.e., SrO for STO (100) substrates. As a result, disadvantages associated with B-site terminated perovskite substrate surfaces are avoided. A suitable etching treatment is a low power oxygen ashing in the presence of low halogen levels.Type: ApplicationFiled: February 22, 2001Publication date: January 10, 2002Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: David W. Abraham, Matthew Copel, James Misewich, Alejandro G. Schrott, Ying Zhang