Forming A Single-crystal Region By Liquefying A Region Of A Single-crystal And Adjusting The Composition Of The Liquid (e.g., Alloying, Regrowth) Patents (Class 117/53)
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Patent number: 11049744Abstract: One or more processors determine a predicted sorting bin of a semiconductor device, based on measurement and test data performed on the semiconductor device subsequent to a current metallization layer. A current predicted sorting bin and a target soring bin are determined by a machine learning model for the semiconductor device; the target bin include higher performance semiconductor devices than the predicted sorting bin. The model determines a performance level improvement attainable by adjustments made to process parameters of subsequent metallization layers of the semiconductor device. Adjustments to process parameters are generated, based on measurement and test data of the current metallization layer of semiconductor device, and the adjustment outputs for the process parameters of the subsequent metallization layers of the semiconductor device are made available to the one or more subsequent metallization layer processes by a feed-forward mechanism.Type: GrantFiled: October 24, 2017Date of Patent: June 29, 2021Assignee: International Business Machines CorporationInventors: Benjamin D. Briggs, Lawrence A. Clevenger, Nicholas A. Lanzillo, Michael Rizzolo, Theodorus E. Standaert, James Stathis
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Patent number: 10228495Abstract: A method of coating an optical substrate with a transparent, electrically conductive coating includes depositing a semiconductor coating over a surface of an optical substrate. The semiconductor coating has broadband optical transmittance. Channels are formed in the semiconductor coating. The method includes coating over the semiconductor coating and filling the channels with a doped semiconductor. The doped semiconductor is removed from the semiconductor coating, leaving the doped semiconductor in the channels.Type: GrantFiled: September 8, 2016Date of Patent: March 12, 2019Assignee: Goodrich CorporationInventor: Bradley D. Schwartz
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Patent number: 8945302Abstract: Method for crystal growth from a surfactant of a metal-nonmetal (MN) compound, including the procedures of providing a seed crystal, introducing atoms of a first metal to the seed crystal thus forming a thin liquid metal wetting layer on a surface of the seed crystal, setting a temperature of the seed crystal below a minimal temperature required for dissolving MN molecules in the wetting layer and above a melting point of the first metal, each one of the MN molecules being formed from an atom of a second metal and an atom of a first nonmetal, introducing the MN molecules which form an MN surfactant monolayer, thereby facilitating a formation of the wetting layer between the MN surfactant monolayer and the surface of the seed crystal, and regulating a thickness of the wetting layer, thereby growing an epitaxial layer of the MN compound on the seed crystal.Type: GrantFiled: March 4, 2012Date of Patent: February 3, 2015Assignee: Mosaic Crystals Ltd.Inventor: Moshe Einav
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Patent number: 8940095Abstract: An apparatus for growth of uniform multi-component single crystals is provided. The single crystal material has at least three elements and has a diameter of at least 50 mm, a dislocation density of less than 100 cm?2 and a radial compositional variation of less than 1%.Type: GrantFiled: November 4, 2011Date of Patent: January 27, 2015Assignee: Rensselaer Polytechnic InstituteInventor: Partha Dutta
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Patent number: 8741059Abstract: According to the present invention, there is provided a single-crystal manufacturing apparatus based on Czochralski method, comprising at least: a main chamber configured to accommodate hot zone components including a crucible; and a pull chamber configured to accommodate and take out a single crystal pulled from a raw material melt contained in the crucible, wherein the apparatus further comprises: a cooling pipe which is arranged above the crucible and in which a cooling medium is circulated; and a moving mechanism that moves up and down the cooling pipe, and the hot zone components are cooled down by utilizing the moving mechanism to move down the cooling pipe toward the crucible after growth of the single crystal, and a method for manufacturing a single crystal is also provided.Type: GrantFiled: February 17, 2009Date of Patent: June 3, 2014Assignee: Shin-Etsu Handotai Co., Ltd.Inventor: Takao Abe
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Patent number: 8501139Abstract: One embodiment of the present invention is a method for producing a silicon (Si) and/or germanium (Ge) foil, the method including: dissolving a Si and/or Ge source material in a molten metallic bath at an elevated temperature T2, wherein the density of Si and/or Ge is smaller than the density of the molten metallic bath; cooling the molten metallic bath to a lower temperature T1, thereby causing Si and/or Ge to separate out of the molten metallic bath and to float and grow as a Si and/or Ge foil on a top surface of the molten metallic bath; and separating the floating Si and/or Ge foil from the top surface of the molten metallic bath.Type: GrantFiled: February 25, 2010Date of Patent: August 6, 2013Inventor: Uri Cohen
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Patent number: 8210906Abstract: A wafer slicing method includes winding a wire around rollers and pressing the wire against an ingot while supplying slurry to the rollers. A previously conducted experiment provides a supply temperature profile of the slurry during the slicing process and the relationship to the axial displacement of the rollers. This relationship is used to implement slurry delivery during the slicing process. The resultant wafers are bowed in a uniform direction. This slicing method provides excellent reproducibility in addition to producing wafers that are bowed in a uniform direction.Type: GrantFiled: August 22, 2007Date of Patent: July 3, 2012Assignee: Shin-Etsu Handotai Co., Ltd.Inventors: Hiroshi Oishi, Daisuke Nakamata
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Patent number: 8197595Abstract: A method for producing thin silicon rods using a floating zone crystallization process includes supplying high frequency (HF) current to a flat induction coil having a central opening, a plurality of draw openings and a plate with a slot as a current supply of the HF current so as to provide a circumfluent current to the central opening. An upper end of a raw silicon rod is heated by induction using the flat induction coil so as to form a melt pool. A thin silicon rod is drawn upwards through each of the plurality of draw openings in the flat induction coil from the melt pool without drawing a thin silicon rod through the central opening having the circumfluent current.Type: GrantFiled: January 19, 2010Date of Patent: June 12, 2012Assignee: PV Silicon Forschungs und Produktions GmbHInventors: Helge Riemann, Friedrich-Wilhelm Schulze, Joerg Fischer, Matthias Renner
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Patent number: 7749872Abstract: Single-crystalline growth is realized using a liquid-phase crystallization approach involving the inhibition of defects typically associated with liquid-phase crystalline growth of lattice mismatched materials. According to one example embodiment, a semiconductor device structure includes a substantially single-crystal region. A liquid-phase material, such as Ge or a semiconductor compound, is crystallized to form the single-crystal region using an approach involving defect inhibition for the promotion of single-crystalline growth. In some instances, this defect inhibition involves the reduction and/or elimination of defects using a relatively small physical opening via which a crystalline growth front propagates. In other instances, this defect inhibition involves causing a change in crystallization front direction relative to a crystallization seed location.Type: GrantFiled: February 25, 2009Date of Patent: July 6, 2010Assignee: The Board of Trustees of the Leland Stanford Junior UniversityInventors: James D. Plummer, Peter B. Griffin, Jia Feng, Shu-Lu Chen
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Semiconductor thin film manufacturing method and device, beam-shaping mask, and thin film transistor
Patent number: 7611577Abstract: A manufacturing method of a semiconductor thin film decreases the number of and controls the direction of crystal grain boundaries. A first beam irradiated onto amorphous silicon produces a radial temperature gradient centered on a tip of a concave. This forms a crystal grain in the concave tip, which grows in both the beam width and length direction. After the second beam and on, growth is repeated using the crystal grain formed in the tip of the concave as the seed. This forms a band-form crystal grain with a wider than that of the conventional narrow-line beam, with the tip of the concave being the start point. Further, by setting the periphery of the concave pattern to be equal or less than the crystal grain diameter in the direction vertical to the beam scanning direction, it is possible to form the band-form crystal grain being lined continuously.Type: GrantFiled: March 31, 2005Date of Patent: November 3, 2009Assignee: NEC CorporationInventor: Mitsuru Nakata -
Patent number: 7498243Abstract: Single-crystalline growth is realized using a liquid-phase crystallization approach involving the inhibition of defects typically associated with liquid-phase crystalline growth of lattice mismatched materials. According to one example embodiment, a semiconductor device structure includes a substantially single-crystal region. A liquid-phase material is crystallized to form the single-crystal region using an approach involving defect inhibition for the promotion of single-crystalline growth. In some instances, this defect inhibition involves the reduction and/or elimination of defects using a relatively small physical opening via which a crystalline growth front propagates. In other instances, this defect inhibition involves causing a change in crystallization front direction relative to a crystallization seed location.Type: GrantFiled: March 17, 2004Date of Patent: March 3, 2009Assignee: The Board of Trustees of the Leland Stanford Junior UniversityInventors: Yaocheng Liu, Michael D. Deal, James D. Plummer
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Patent number: 7396407Abstract: The present invention discloses the use of edge-angle-optimized solid phase epitaxy for forming hybrid orientation substrates comprising changed-orientation Si device regions free of the trench-edge defects typically seen when trench-isolated regions of Si are recrystallized to the orientation of an underlying single-crystal Si template after an amorphization step. For the case of amorphized Si regions recrystallizing to (100) surface orientation, the trench-edge-defect-free recrystallization of edge-angle-optimized solid phase epitaxy may be achieved in rectilinear Si device regions whose edges align with the (100) crystal's in-plane <100> directions.Type: GrantFiled: April 18, 2006Date of Patent: July 8, 2008Assignee: International Business Machines CorporationInventors: Katherine L. Saenger, Chun-yung Sung, Haizhou Yin
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Publication number: 20070187668Abstract: A single crystal substrate and method of fabricating the same are provided. The single crystal substrate includes an insulator having a window exposing a portion of a substrate, a selective epitaxial growth layer formed on the portion of the substrate exposed through the window and a single crystalline layer formed on the insulator and the selective epitaxial growth layer using the selective epitaxial growth layer as an epitaxial seed layer.Type: ApplicationFiled: November 13, 2006Publication date: August 16, 2007Inventors: Takashi Noguchi, Hans S. Cho, Wenxu Xianyu, Huaxiang Yin
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Publication number: 20070169684Abstract: Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of monocrystalline silicon may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm is provided.Type: ApplicationFiled: January 18, 2007Publication date: July 26, 2007Applicant: BP Corporation North America Inc.Inventor: Nathan G. Stoddard
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Publication number: 20020098418Abstract: Disclosed is a storage medium which comprises strontium barium niobate single crystal containing europium and cerium as impurities. The material may be used in which the strontium barium niobate has a chemical formula: SrxBa1-xNb2O6 where x satisfies 0.25≦x≦0.75. Further, small amounts of cerium and europium are added to a main component comprised by strontium, barium, niobate and oxygen. The optical material can be used in various optical devices such as a holographic storage medium, a phase conjugate mirror and an optical amplifier.Type: ApplicationFiled: June 20, 1997Publication date: July 25, 2002Inventors: SHOGO YAGI, MICHIO ONO, TADAYUKI IMAI, HIROKI YAMAZAKI
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Patent number: 5612251Abstract: In a manufacturing method and device for a polycrystalline silicon, the manufacturing method forms amorphous silicon on the substrate, and an adiabatic layer between substrate and amorphous silicon if needed. The amorphous silicon is preliminarily heated and melted, and is evenly supplied with heat when the amorphous silicon is re-crystallized, to thereby slow down the re-crystallization. Also, a manufacturing device has first and second light sources for supplying an optical energy to a-Si formed on substrate. A uniformed and large sized grain can be formed, and specifically, cost reduction is possible since the general glass substrate can be used.Type: GrantFiled: September 15, 1995Date of Patent: March 18, 1997Assignee: Samsung Electronics Co., Ltd.Inventor: Jae-won Lee
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Patent number: 5549748Abstract: A method of preparing single crystals. The method of preparation involves preparing precursor materials of a particular composition, heating the precursor material to achieve a peritectic mixture of peritectic liquid and crystals, cooling the peritectic mixture to quench directly the mixture on a porous, wettable inert substrate to wick off the peritectic liquid, leaving single crystals on the porous substrate. Alternatively, the peritectic mixture can be cooled to a solid mass and reheated on a porous, inert substrate to melt the matrix of peritectic fluid while leaving the crystals unmelted, allowing the wicking away of the peritectic liquid.Type: GrantFiled: January 12, 1995Date of Patent: August 27, 1996Assignee: University of ChicagoInventors: Volker R. Todt, Suvankar Sengupta, Donglu Shi
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Patent number: RE41512Abstract: A crucible is formed of a cylindrical body member and a disk-shaped nozzle member fitted to the bottom portion of the body member, and the nozzle member is provided with a nozzle hole for discharging out a semiconductor molten solution dropwise therethrough. The semiconductor molten solution drops discharged out of the crucible through the nozzle hole are cooled and solidified during falling to become semiconductor grains. Silicon grains having high crystal quality can be manufactured at low cost.Type: GrantFiled: February 13, 2008Date of Patent: August 17, 2010Assignee: Kyocera CorporationInventors: Nobuyuki Kitahara, Toshio Suzuki, Noboru Suda, Shin Sugawara, Hisao Arimune