Forming A Platelet Shape Or A Small Diameter, Elongate, Generally Cylindrical Shape (e.g., Whisker, Fiber, Needle, Filament) (e.g., Vls Method) Patents (Class 117/75)
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Patent number: 11101158Abstract: The disclosed subject matter relates to techniques, laminates and devices used to fabricate thin dielectric or semiconductor membranes including a handling substrate including a photoresist material on a first surface thereof, a semiconductor wafer having a circuit pattern on a first surface and a second surface to be processed and a temporary adhesive layer temporarily bonding the first surface of the semiconductor wafer to the first surface of the handling substrate including the photoresist material.Type: GrantFiled: August 8, 2018Date of Patent: August 24, 2021Assignee: United States of America as represented by the Administrator of NASAInventors: Ari D. Brown, Joseph Oxborrow, Vilem Mikula, Kevin L. Denis, Timothy M. Miller
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Patent number: 10010867Abstract: The invention is directed to a process for producing carbon nanofibers and/or carbon nanotubes, which process comprises pyrolyzing a particulate cellulosic and/or carbohydrate substrate that has been impregnated with a compound of an element or elements, the metal or alloy, respectively, of which is capable of forming carbides, in a substantially oxygen free, volatile silicon compound containing atmosphere, optionally in the presence of a carbon compound.Type: GrantFiled: September 12, 2014Date of Patent: July 3, 2018Assignee: BASF CORPORATIONInventors: Jacobus Hoekstra, John Wilhelm Geus, Leonardus Wijnand Jenneskens
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Patent number: 9446957Abstract: Polycrystalline silicon rods produced by the Siemens process produce a higher yield of CZ crystals when the process parameters are modified in a second stage of deposition such that an outer layer of larger crystallites having a mean swize >20 ?m is produced. Harvesting of these polycrystalline rods and conventional rods by enclosing them in a plastic bag or sheath prior to removal from the reactor also surprisingly increase the yield of CZ crystals grown from a melt containing the sheathed rods.Type: GrantFiled: December 12, 2012Date of Patent: September 20, 2016Assignee: WACKER CHEMIE AGInventors: Mikhail Sofin, Erich Dornberger, Reiner Pech
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Patent number: 9358750Abstract: Nanopatterned surfaces are prepared by a method that includes forming a block copolymer film on a substrate, annealing and surface reconstructing the block copolymer film to create an array of cylindrical voids, depositing a metal on the surface-reconstructed block copolymer film, and heating the metal-coated block copolymer film to redistribute at least some of the metal into the cylindrical voids. When very thin metal layers and low heating temperatures are used, metal nanodots can be formed. When thicker metal layers and higher heating temperatures are used, the resulting metal structure includes nanoring-shaped voids. The nanopatterned surfaces can be transferred to the underlying substrates via etching, or used to prepare nanodot- or nanoring-decorated substrate surfaces.Type: GrantFiled: July 17, 2013Date of Patent: June 7, 2016Assignee: THE UNIVERSITY OF MASSACHUSETTSInventors: Thomas P. Russell, Soojin Park, Jia-Yu Wang, Bokyung Kim
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Patent number: 9355790Abstract: Ultracapacitor electrodes having an enhanced electrolyte-accessible surface area are provided. Such electrodes can include a porous substrate having a solution side and a collector side, the collector side operable to couple to a current collector and the solution side positioned to interact with an electrolytic solution when in use. The electrode can also include a conductive coating formed on the solution side of the porous substrate. The coating can have a first side positioned to interact with an electrolytic solution when in use and a second side opposite the first side. The coating can have discontinuous regions that allow access of an electrolyte solution to the second side during use to enhance electrolyte-accessible surface area of the conductive coating.Type: GrantFiled: June 27, 2013Date of Patent: May 31, 2016Assignee: Intel CorporationInventors: Charles W. Holzwarth, Cary L. Pint, Michael C. Graf, Bum Ki Moon
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Method of growing GaN whiskers from a gallium-containing solvent at low pressure and low temperature
Patent number: 8999060Abstract: Millimeter-scale GaN single crystals in filamentary form, also known as GaN whiskers, grown from solution and a process for preparing the same at moderate temperatures and near atmospheric pressures are provided. GaN whiskers can be grown from a GaN source in a reaction vessel subjected to a temperature gradient at nitrogen pressure. The GaN source can be formed in situ as part of an exchange reaction or can be preexisting GaN material. The GaN source is dissolved in a solvent and precipitates out of the solution as millimeter-scale single crystal filaments as a result of the applied temperature gradient.Type: GrantFiled: March 12, 2013Date of Patent: April 7, 2015Assignee: The United States of America, as represented by the Secretary of the NavyInventors: Boris N. Feigelson, Jennifer K. Hite, Francis J. Kub, Charles R. Eddy, Jr. -
Publication number: 20150086871Abstract: Methods for producing nanostructures from copper-based catalysts on porous substrates, particularly silicon nanowires on carbon-based substrates for use as battery active materials, are provided. Related compositions are also described. In addition, novel methods for production of copper-based catalyst particles are provided. Methods for producing nanostructures from catalyst particles that comprise a gold shell and a core that does not include gold are also provided.Type: ApplicationFiled: July 24, 2012Publication date: March 26, 2015Applicant: ONED MATERIAL LLCInventors: Wanqing Cao, Virginia Robbins
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Patent number: 8926713Abstract: Titanium dioxide which includes particles having a large major-axis length in a large proportion and comprises columnar particles having a satisfactory particle size distribution. A titanium compound, an alkali metal compound, and an oxyphosphorus compound are heated/fired in the presence of titanium dioxide nucleus crystals having an aspect ratio of 2 or higher to grow the titanium dioxide nucleus crystals. Subsequently, a titanium compound, an alkali metal compound, and an oxyphosphorus compound are further added and heated/fired in the presence of the grown titanium dioxide nucleus crystals. Thus, titanium dioxide is produced which comprises columnar particles having a weight-average major-axis length of 7.0-15.0 ?m and in which particles having a major-axis length of 10 ?m or longer account for 15 wt. % or more of all the particles.Type: GrantFiled: June 4, 2012Date of Patent: January 6, 2015Assignee: Ishihara Sangyo Kaisha, Ltd.Inventors: Kaoru Isobe, Katsuichi Chiba, Takanori Sakamoto
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Patent number: 8858707Abstract: A method for making silicon nanorods is provided. In accordance with the method, Au nanocrystals are reacted with a silane in a liquid medium to form nanorods, wherein each of said nanorods has an average diameter within the range of about 1.2 nm to about 10 nm and has a length within the range of about 1 nm to about 100 nm.Type: GrantFiled: April 14, 2010Date of Patent: October 14, 2014Assignee: Merck Patent GmbHInventors: Andrew T. Heitsch, Colin M. Hessel, Brian A. Korgel
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Publication number: 20140230720Abstract: Growth of GaP and III-V GaP alloys in the wurtzite crystal structure by vapor phase epitaxy (VPE) is provided. Such material has a direct band gap and is therefore much more useful for optoelectronic devices than conventional GaP and GaP alloys having the zincblende crystal structure and having an indirect band gap.Type: ApplicationFiled: February 19, 2014Publication date: August 21, 2014Inventors: Simone Assali, Ilaria Zardo, Jozef Everardus Maria Haverkort, Erik Petrus Antonius Maria Bakkers
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Publication number: 20140220340Abstract: A new set of branched nanowire or nanotree structures and their fabrication process. Some structures have one or more of the following distinctions from other branched nanowires: (1) the trunk and branch diameter and branching number density can be changed along the trunk's length; (2) the branch's azimuthal direction can be controlled along the trunk's length; (3) the branch's diameter can be modulated along its length; (4) the crystal orientation and branches of the ensemble of nanowires can be aligned on a non-epitaxially matched substrate. The structures are made by a geometrically controlled kinetic growth method.Type: ApplicationFiled: November 27, 2013Publication date: August 7, 2014Applicant: The Governors of the University of AlbertaInventors: Ryan Thomas Tucker, Allan Leo Beaudry, Joshua Michael LaForge, Michael Thomas Taschuk, Michael Julian Brett
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Patent number: 8729672Abstract: To grow a gallium nitride crystal, a seed-crystal substrate is first immersed in a melt mixture containing gallium and sodium. Then, a gallium nitride crystal is grown on the seed-crystal substrate under heating the melt mixture in a pressurized atmosphere containing nitrogen gas and not containing oxygen. At this time, the gallium nitride crystal is grown on the seed-crystal substrate under a first stirring condition of stirring the melt mixture, the first stirring condition being set for providing a rough growth surface, and the gallium nitride crystal is subsequently grown on the seed-crystal substrate under a second stirring condition of stirring the melt mixture, the second stirring condition being set for providing a smooth growth surface.Type: GrantFiled: April 12, 2013Date of Patent: May 20, 2014Assignee: NGK Insulators, Ltd.Inventors: Takanao Shimodaira, Takayuki Hirao, Katsuhiro Imai
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Patent number: 8721788Abstract: A method for charging with liquefied ammonia comprising sequentially a feeding step of feeding gaseous ammonia in a condenser, a liquefaction step of converting the gaseous ammonia into a liquefied ammonia in the condenser, and a charging step of feeding the liquefied ammonia formed in the condenser to a vessel to thereby charge the vessel with the liquefied ammonia wherein a cooling step of feeding the liquefied ammonia formed in the condenser to the vessel and cooling the vessel by the latent heat of vaporization of the liquefied ammonia and a circulation step of feeding the gaseous ammonia formed through vaporization of the liquefied ammonia in the previous cooling step to the condenser are carried out between the liquefaction step and the charging step.Type: GrantFiled: September 24, 2008Date of Patent: May 13, 2014Assignee: Mitsubishi Chemical CorporationInventors: Yuuichi Katou, Takao Watanabe, Kazunori Hiruta
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Patent number: 8679248Abstract: Millimeter-scale GaN single crystals in filamentary form, also known as GaN whiskers, grown from solution and a process for preparing the same at moderate temperatures and near atmospheric pressures are provided. GaN whiskers can be grown from a GaN source in a reaction vessel subjected to a temperature gradient at nitrogen pressure. The GaN source can be formed in situ as part of an exchange reaction or can be preexisting GaN material. The GaN source is dissolved in a solvent and precipitates out of the solution as millimeter-scale single crystal filaments as a result of the applied temperature gradient.Type: GrantFiled: November 23, 2010Date of Patent: March 25, 2014Assignee: The United States of America, as represented by the Secretary of the NavyInventors: Boris N. Feigelson, Jennifer K. Hite, Francis J. Kub, Charles R. Eddy, Jr.
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Patent number: 8679443Abstract: A method of treating a diamond, the method comprising: (i) providing a liquid metal saturated with carbon with respect to graphite precipitation; (ii) lowering the temperature of the liquid metal such that the liquid metal is saturated with carbon with respect to diamond precipitation; (iii) immersing a diamond in the liquid metal; and (iv) removing the diamond from the metal.Type: GrantFiled: July 19, 2010Date of Patent: March 25, 2014Assignee: Designed Materials LtdInventors: Philip H. Taylor, A. Marshall Stoneham
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Patent number: 8663388Abstract: Disclosed are a single crystal wire and other single crystal articles, and a manufacturing method thereof. The method comprises the steps of: placing into a growth crucible at least one metal selected from the group consisting of gold, copper, silver, aluminum and nickel; heating and melting the metal placed in the growth crucible; growing a single crystal using metal crystal as a seed by Czochralski or Bridgman method; cutting the grown single crystal by electric discharge machining; and machining the cut single crystal and producing a wire or other articles such as a ring. In the method, the grown metal single crystal is cut into a disc-shaped piece by electric discharge machining. The piece is transformed into a single crystal wire or other articles by wire-cut electric discharge machining, and the single crystal wire can be used as a ring, a pendant, or a wire for high-quality cables for audio and video systems.Type: GrantFiled: May 6, 2009Date of Patent: March 4, 2014Assignee: Korea Electrotechnology Research InstituteInventors: Se Young Jeong, Chae Ryong Cho, Sang Eon Park, Sung Kyu Kim
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Patent number: 8658246Abstract: A seed substrate is placed to face a formation substrate, and then a gas containing silicon is introduced and chemical vapor deposition is performed. There is no particular limitation on a kind of a material used for the formation substrate as long as the material can withstand the temperature at which the reduced pressure chemical vapor deposition is performed. A group of silicon whiskers which does not include a seed atom can be grown directly on and in contact with the formation substrate. Further, the substrate provided with the group of whiskers can be applied to a solar cell, a lithium ion secondary battery, and the like, by utilizing surface characteristics of the group of whiskers.Type: GrantFiled: September 29, 2011Date of Patent: February 25, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Toshihiko Takeuchi, Makoto Ishikawa, Yuki Murakami
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Patent number: 8647432Abstract: A method for making a large surface area silicon filament for production of bulk polysilicon by chemical vapor deposition (CVD) includes melting silicon and growing the filament from the melted silicon by an EFG method using a shaping die. The cross sectional shape of the silicon filament is constant over its axial length to within a tolerance of 10%. In embodiments, a plurality of identical and/or dissimilar filaments are grown simultaneously using a plurality of shaping dies. The filaments can be tubular. Filament cross sections can be annular and/or can include outwardly extending fins, with wall and/or fin thicknesses constant to within 10%. Filaments can be doped with at least one element from groups 3 and 5 of the Periodic Table. The filament can have a length equal to a length of a specified slim rod filament, and a total impedance not greater than the slim rod impedance.Type: GrantFiled: July 20, 2011Date of Patent: February 11, 2014Assignee: GTAT CorporationInventors: Yuepeng Wan, Santhana Raghavan Parthasarathy, Carl Chartier, Adrian Servini, Chandra P Khattak
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Patent number: 8603242Abstract: One embodiment of the present invention is a method for producing a silicon (Si) and/or germanium (Ge) foil, the method including: dissolving a Si and/or Ge source material in a molten metallic bath at an elevated temperature T2, wherein the density of Si and/or Ge is smaller than the density of the molten metallic bath; cooling the molten metallic bath to a lower temperature T1, thereby causing Si and/or Ge to separate out of the molten metallic bath and to float and grow as a Si and/or Ge foil on a top surface of the molten metallic bath; and separating the floating Si and/or Ge foil from the top surface of the molten metallic bath.Type: GrantFiled: February 25, 2010Date of Patent: December 10, 2013Inventors: Uri Cohen, Michael Roitberg
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Patent number: 8545625Abstract: The invention provides novel dental enamel inspired materials for biomedical and dental applications. The materials are apatite-like calcium phosphate complexes and may comprise apatite, octacalcium phosphate crystals, or mixtures thereof. In one embodiment, the materials (calcium phosphate coatings) are mixtures of crystals of apatite and its precursor, octacalcium phosphate, nucleated on a titanium surface. They are prepared using a chemical process leading to the formation of biological apatite which is similar to that found in natural bone and teeth. In one embodiment, the materials are prepared by placing a titanium substrate in a supersaturated calcifying solution containing native or purified recombinant amelogenins. The presence of the amelogenins modulates apatite crystal growth to mimic in vivo apatite crystal formation.Type: GrantFiled: September 12, 2006Date of Patent: October 1, 2013Assignee: University of Southern CaliforniaInventors: Hai Bo Wen, Janet Moradian-Oldak
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Publication number: 20130192517Abstract: A method for synthesizing monocrystalline alumina nanofibers by controlled liquid phase oxidation of a melt including molten aluminum. The method comprises two stages. During the first stage, metallic aluminum is melted and various additives are introduced into the melt. During the second stage, the alumina nanofibers are synthesized from the resulting melt in the presence of oxygen. In one or more embodiments, the inventive method is performed in a reactor. The reactor is designed to provide the heating and to enable melting of metallic aluminum. In addition, the reactor is designed to maintain a sustained temperature of between 660° C. and 1,000° C. When the additives are introduced into the molten aluminum, it is desirable to provide steady and uniform the stirring of the melt. To this end, the reactor may be provided with a stirring mechanism.Type: ApplicationFiled: January 31, 2013Publication date: August 1, 2013Applicant: ANF TECHNOLOGY LIMITEDInventor: ANF Technology Limited
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Publication number: 20130186326Abstract: Millimeter-scale GaN single crystals in filamentary form, also known as GaN whiskers, grown from solution and a process for preparing the same at moderate temperatures and near atmospheric pressures are provided. GaN whiskers can be grown from a GaN source in a reaction vessel subjected to a temperature gradient at nitrogen pressure. The GaN source can be formed in situ as part of an exchange reaction or can be preexisting GaN material. The GaN source is dissolved in a solvent and precipitates out of the solution as millimeter-scale single crystal filaments as a result of the applied temperature gradient.Type: ApplicationFiled: March 12, 2013Publication date: July 25, 2013Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Boris N. Feigelson, Jennifer K. Hite, Francis J. Kub, Charles R. Eddy, JR.
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Patent number: 8491718Abstract: A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies.Type: GrantFiled: October 13, 2010Date of Patent: July 23, 2013Inventors: Karin Chaudhari, Ashok Chaudhari, Pia Chaudhari
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Patent number: 8486190Abstract: A raw material mixture containing an easily oxidizable material is weighed. The raw material mixture is melted and then solidified within a reaction vessel 1 set in a non-oxidizing atmosphere to thereby produce a solidified matter 19. The reaction vessel 1 and the solidified matter 19 are heated in a non-oxidizing atmosphere within a crystal growth apparatus to melt the solidified matter to thereby produce a solution. A single crystal is grown from the solution.Type: GrantFiled: September 22, 2008Date of Patent: July 16, 2013Assignees: NGK Insulators, Ltd., Osaka UniversityInventors: Katsuhiro Imai, Makoto Iwai, Takatomo Sasaki, Yusuke Mori, Fumio Kawamura
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Patent number: 8440017Abstract: To grow a gallium nitride crystal, a seed-crystal substrate is first immersed in a melt mixture containing gallium and sodium. Then, a gallium nitride crystal is grown on the seed-crystal substrate under heating the melt mixture in a pressurized atmosphere containing nitrogen gas and not containing oxygen. At this time, the gallium nitride crystal is grown on the seed-crystal substrate under a first stirring condition of stirring the melt mixture, the first stirring condition being set for providing a rough growth surface, and the gallium nitride crystal is subsequently grown on the seed-crystal substrate under a second stirring condition of stirring the melt mixture, the second stirring condition being set for providing a smooth growth surface.Type: GrantFiled: August 12, 2011Date of Patent: May 14, 2013Assignee: NGK Insulators, Ltd.Inventors: Takanao Shimodaira, Takayuki Hirao, Katsuhiro Imai
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Patent number: 8398767Abstract: Bulk mono-crystalline gallium-containing nitride, grown on the seed at least in the direction essentially perpendicular to the direction of the seed growth, essentially without propagation of crystalline defects as present in the seed, having the dislocation density not exceeding 104/cm2 and considerably lower compared to the dislocation density of the seed, and having a large curvature radius of the crystalline lattice, preferably longer than 15 m, more preferably longer than 30 m, and most preferably of about 70 m, considerably longer than the curvature radius of the crystalline lattice of the seed.Type: GrantFiled: June 10, 2005Date of Patent: March 19, 2013Assignees: Ammono S.A., Nichia CorporationInventors: Robert Dwilinski, Roman Doradzinski, Jerzy Garczynski, Leszek Sierzputowski, Yasuo Kanbara, Robert Kucharski
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Publication number: 20130011677Abstract: A large sized bulk crystal is produced which allows to cut out a practical size of crystal substrate. The gallium nitride crystal has features in which a length L of c-axis is 9 mm or more, a crystal diameter d of a cross section orthogonal to the c-axis is 100 ?m, and a ratio L/d of the length L of the c-axis and the crystal diameter d of the cross section orthogonal to the c-axis is 7 or more. By enlarging this elongated needle-like crystal, a bulk crystal with a large volume can be produced, and a large sized bulk crystal can be produced which allows to cut out a practical size of crystal substrate.Type: ApplicationFiled: September 13, 2012Publication date: January 10, 2013Applicant: RICOH COMPANY, LTD.Inventors: Hiroshi NAMBU, Hirokazu IWATA, Takashi SATOH
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Publication number: 20120270737Abstract: Vapor-liquid-solid growth of nanowires is tailored to achieve complex one-dimensional material geometries using phase diagrams determined for nanoscale materials. Segmented one-dimensional nanowires having constant composition display locally variable electronic band structures that are determined by the diameter of the nanowires. The unique electrical and optical properties of the segmented nanowires are exploited to form electronic and optoelectronic devices. Using gold-germanium as a model system, in situ transmission electron microscopy establishes, for nanometer-sized Au—Ge alloy drops at the tips of Ge nanowires (NWs), the parts of the phase diagram that determine their temperature-dependent equilibrium composition. The nanoscale phase diagram is then used to determine the exchange of material between the NW and the drop. The phase diagram for the nanoscale drop deviates significantly from that of the bulk alloy.Type: ApplicationFiled: June 18, 2012Publication date: October 25, 2012Applicant: BROOKHAVEN SCIENCE ASSOCIATES, LLCInventors: ELI ANGUELOVA SUTTER, PETER WERNER SUTTER
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Patent number: 8062420Abstract: Described are nonlinear optical (NLO) crystals, including aluminum-borate NLO crystals, that have low concentrations of contaminants that adversely affect the NLO crystal's optical properties, such as compounds that contain transition-metal elements and/or lanthanides, other than yttrium, lanthanum, and lutetium. Some NLO crystals with low concentrations of these contaminants are capable of second harmonic generation at very short wavelengths. Also described are embodiments of a method for making these NLO crystals. Some embodiments involve growing a single NLO crystal, such as an aluminum-borate NLO crystal, from a mixture containing a solvent that is substantially free of harmful contaminants. The described NLO crystals can be used, for example, in laser devices.Type: GrantFiled: June 19, 2007Date of Patent: November 22, 2011Assignee: State of Oregon acting by and through the State Board of higher Education on behalf of Oregon State UniversityInventors: Douglas A. Keszler, Ning Ye
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Patent number: 8038794Abstract: A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing group III-nitride crystal from the melt, and characterized by handling the alkali-metal-element-containing substance in a drying container in which moisture concentration is controlled to at most 1.0 ppm at least in the step of introducing the alkali-metal-element-containing substance into the reactor is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.Type: GrantFiled: April 15, 2005Date of Patent: October 18, 2011Assignees: Sumitomo Electric Industries, Ltd.Inventors: Takatomo Sasaki, Yusuke Mori, Masashi Yoshimura, Fumio Kawamura, Seiji Nakahata, Ryu Hirota
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Patent number: 8012256Abstract: Disclosed are a method of fabricating a quasi-substrate wafer with a subcarrier wafer and a growth layer, and a semiconductor body fabricated using such a quasi-substrate wafer. In the method of fabricating a quasi-substrate wafer, a growth substrate water is fabricated that is provided with a separation zone and comprises the desired material of the growth layer. The growth substrate wafer is provided with a stress that counteracts a stress generated by the formation of the separation zone, and/or the stress generated by the formation of the separation zone is distributed, by structuring a first main race of the growth substrate water and/or the separation zone, to a plurality of subregions along the first main face. The growth substrate wafer with separation zone exhibits no or only slight bowing.Type: GrantFiled: January 30, 2007Date of Patent: September 6, 2011Assignee: Osram Opto Semiconductor GmbHInventors: Georg Brüderl, Christoph Eichler, Uwe Strauss
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Patent number: 7981215Abstract: Single crystal MoO3 nanowires were produced using an electrospinning technique. High resolution transmission electron microscopy (HRTEM) revealed that the 1-D nanostructures are from 10-20 nm in diameter, on the order of 1-2 ?m in length, and have the orthorhombic MoO3 structure. The structure, crystallinity, and sensoric character of these electrostatically processed nanowires are discussed. It has been demonstrated that the non-woven-network of MoO3 nanowires exhibits higher sensitivity and an n-type response to NH3 as compared to the response of a sol-gel based sensor.Type: GrantFiled: May 22, 2007Date of Patent: July 19, 2011Assignee: The Research Foundation of State University of New YorkInventors: Pelagia-Irene Gouma, Aisha Suzette Haynes, Krithika Kalyanasundaram
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Patent number: 7959729Abstract: A production method is provided in which Group-III-element nitride single crystals that have a lower dislocation density and a uniform thickness and are transparent, high quality, large, and bulk crystals can be produced with a high yield. The method for producing Group-III-element nitride single crystals includes: heating a reaction vessel containing at least one metal element selected from the group consisting of an alkali metal and an alkaline-earth metal and at least one Group III element selected from the group consisting of gallium (Ga), aluminum (Al), and indium (In) to prepare a flux of the metal element; and feeding nitrogen-containing gas into the reaction vessel and thereby allowing the Group III element and nitrogen to react with each other in the flux to grow Group-III-element nitride single crystals, wherein the single crystals are grown, with the flux being stirred by rocking the reaction vessel, for instance.Type: GrantFiled: March 15, 2004Date of Patent: June 14, 2011Assignee: Osaka UniversityInventors: Takatomo Sasaki, Yusuke Mori, Masashi Yoshimura, Fumio Kawamura, Hidekazu Umeda
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Patent number: 7850777Abstract: A semiconductor nanocrystal composition comprising a Group V to VI semiconductor material and a method of making same. The method includes synthesizing a semiconductor nanocrystal core, where the synthesizing includes dissolving a Group V to VI anion gas in a first solvent to produce a Group V to VI anion precursor, preparing a cation precursor, and reacting the Group V to VI anion precursor with the cation precursor in the presence of a second solvent. The reacting may occur in a high pressure vessel.Type: GrantFiled: February 28, 2007Date of Patent: December 14, 2010Assignee: Evident TechnologiesInventors: Adam Peng, Margaret Hines, Susanthri Perera
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Patent number: 7828895Abstract: The invention relates to a method of producing an optical element using a garnet single crystal for the purpose of providing an optical element with a reduced Pb content or from which Pb can preliminarily be removed completely. By growing a garnet single crystal by using a solution containing Na, Bi and B by the LPE process and thermally treating the garnet single crystal in reducing atmosphere prepared by using nitrogen gas and/or hydrogen gas, the resulting thermally treated garnet single crystal is used to prepare an optical element.Type: GrantFiled: January 19, 2007Date of Patent: November 9, 2010Assignee: TDK CorporationInventor: Atsushi Ohido
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Patent number: 7794539Abstract: A method for producing Group-III-element nitride crystals by which an improved growth rate is obtained and large high-quality crystals can be grown in a short time, a producing apparatus used therein, and a semiconductor element obtained using the method and the apparatus are provided. The method is a method for producing Group-III-element nitride crystals that includes a crystal growth process of subjecting a material solution containing a Group III element, nitrogen, and at least one of alkali metal and alkaline-earth metal to pressurizing and heating under an atmosphere of a nitrogen-containing gas so that the nitrogen and the Group III element in the material solution react with each other to grow crystals.Type: GrantFiled: March 31, 2005Date of Patent: September 14, 2010Assignees: Panasonic CorporationInventors: Hisashi Minemoto, Yasuo Kitaoka, Isao Kidoguchi, Yusuke Mori, Fumio Kawamura, Takatomo Sasaki, Yasuhito Takahashi
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Patent number: 7713352Abstract: A process is provided to produce bulk quantities of nanowires in a variety of semiconductor materials. Thin films and droplets of low-melting metals such as gallium, indium, bismuth, and aluminum are used to dissolve and to produce nanowires. The dissolution of solutes can be achieved by using a solid source of solute and low-melting metal, or using a vapor phase source of solute and low-melting metal. The resulting nanowires range in size from 1 nanometer up to 1 micron in diameter and lengths ranging from 1 nanometer to several hundred nanometers or microns. This process does not require the use of metals such as gold and iron in the form of clusters whose size determines the resulting nanowire size. In addition, the process allows for a lower growth temperature, better control over size and size distribution, and better control over the composition and purity of the nanowire produced therefrom.Type: GrantFiled: September 14, 2006Date of Patent: May 11, 2010Assignee: University of Louisville Research Foundation, Inc.Inventors: Mahendra Kumar Sunkara, Shashank Sharma, Hari Chandrasekaran, Hongwei Li, Sreeram Vaddiraju
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Patent number: 7695562Abstract: It is an object of the present invention to provide a magnetic garnet single crystal at a reduced Pb content, and a method for producing the same and an optical element using the same. The object is attained with a magnetic garnet single crystal represented by the chemical formula Bi?Na?M13-?-?Fe5-?M2?O12 (M1 is at least one element selected from Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and M2 is at least one element selected from Si, Ge and Ti, provided that 0.5<??2.0, 0<??0.8, 0.2?3????<2.5, and 0<??1.6).Type: GrantFiled: December 29, 2006Date of Patent: April 13, 2010Assignee: TDK CorporationInventor: Atsushi Ohido
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Patent number: 7611750Abstract: A nanocomposite material and a method of manufacturing the same are disclosed. The nanocomposite material includes a plurality of nanoparticles coated with a metal oxide, and a matrix of the metal oxide immobilizing the nanoparticles that are dispersed therein. The nanocomposite material is manufactured such that macro- or macro-scale cracks are prevented or effectively prevented, light stability is enhanced over a light-emitting period, and light brightness is improved.Type: GrantFiled: December 4, 2006Date of Patent: November 3, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Dong-kee Yi, Byung-ki Kim, Jae-ho Lee, Eun-joo Jang, Seong-jae Choi
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Patent number: 7547358Abstract: A system and method for growing diamond crystals from diamond crystal seeds by epitaxial deposition at low temperatures and atmospheric and comparatively low pressures. A solvent is circulated (by thermal convection and/or pumping), wherein carbon is added in a hot leg, transfers to a cold leg having, in some embodiments, a range of progressively lowered temperatures and concentrations of carbon via the circulating solvent, and deposits layer-by-layer on diamond seeds located at the progressively lower temperatures since as diamond deposits the carbon concentration lowers and the temperature is lowered to keep the solvent supersaturated. The solvent includes metal(s) or compound(s) that have low melting temperatures and transfer carbon at comparatively low temperatures. A controller receives parameter signals from a variety of sensors located in the system, processes these signals, and optimizes diamond deposition by outputting the necessary control signals to a plurality of control devices (e.g.Type: GrantFiled: June 27, 2008Date of Patent: June 16, 2009Inventor: Zalman M. Shapiro
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Patent number: 7527690Abstract: The present invention relates to a ferroelectric ceramic compound having the composition of the following formula: s[L]?x[P]y[M]z[N]p[T], a ferroelectric ceramic single crystal, and preparation processes thereof. The ferroelectric ceramic compound and the single crystal according to the present invention are relaxor ferroelectrics having high piezoelectricity, a high electromechanical coefficient and a high electrooptical coefficient, and are useful for manufacturing tunable filters for radio communication, optical communication devices, surface acoustic wave devices, and the like. Particularly, the process of preparing the single crystal according to the present invention enables preparation of a single crystal having a diameter of 5 cm or greater and a single crystal wafer with uniform composition.Type: GrantFiled: July 30, 2003Date of Patent: May 5, 2009Assignee: Ibule Photonics Co., Ltd.Inventors: Sang-Goo Lee, Min-Chan Kim, Byung-Ju Choi, Min-Chul Shin, Su-Han Yu
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Patent number: 7507292Abstract: A method for producing a Group III element nitride single crystal, which comprises reacting at least one Group III element selected from the group consisting of gallium(Ga), aluminum(Al) and indium(In) with nitrogen(N) in a mixed flux of sodium(Na) and at least one of an alkali metal (except Na) and an alkaline earth metal. The method allows the production, with a good yield, of the single crystal of a group III element nitride which is transparent, is reduced in the density of dislocation, has a bulk form, and is large. In particular, a gallium nitride single crystal produced by the method has high quality and takes a large and transparent bulk form, and thus has a high practical value.Type: GrantFiled: June 30, 2003Date of Patent: March 24, 2009Assignee: Osaka Industrial Promotion OrganizationInventors: Takatomo Sasaki, Yusuke Mori, Masashi Yoshimura, Fumio Kawamura, Kunimichi Omae, Tomoya Iwahashi, Masanori Morishita
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Patent number: 7435296Abstract: The present invention provides methods of forming high quality diamond bodies under high pressure, and the diamond bodies produced by such methods. In one aspect, a method is provided for growing a diamond body, including providing a non-particulate silicon carbide (SiC) mass having a pre-designed shape, placing the SiC mass under high pressure in association with a molten catalyst and a carbon source, and maintaining the SiC mass under high pressure to form a substantially monocrystalline diamond body. The diamond body may be formed across substantially all of the SiC mass having surface area exposed to the molten catalyst. As such, the diamond body may conform to the shape of the exposed surface area of the SiC mass.Type: GrantFiled: April 18, 2006Date of Patent: October 14, 2008Inventor: Chien-Min Sung
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Patent number: 7410539Abstract: The template type substrate is used for opto-electric or electrical devices and comprises A) a layer of bulk mono-crystal nitride containing at least one element of alkali metals (Group I, IUPAC 1989) and B) a layer of nitride grown by means of vapor phase epitaxy growth wherein the layer A) and the layer B) are combined at non N-polar face of the layer A) and N-polar face of the layer B). Therefore, the template type substrate has a good dislocation density and a good value of FWHM of the X-ray rocking curve from (0002) plane less than 80, so that the resulting template type substrate is very useful for the epitaxy substrate from gaseous phase such as MOCVD, MBE and HVPE, resulting in possibility of making good opto-electric devices such as Laser Diode and large-output LED and good electric devices such as MOSFET.Type: GrantFiled: December 11, 2003Date of Patent: August 12, 2008Assignees: Ammono Sp. z o.o., Nichia CorporationInventors: Robert Dwilinski, Roman Doradzinski, Jerzy Garczynski, Leszek Sierzputowski, Yasuo Kanbara
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Patent number: 7396408Abstract: This invention relates to a method for the production of diamond films with low misorientation through the deposition of diamond on a film system, whereby the film system exhibits a substrate film made of monocrystalline silicon or silicon carbide, at least one buffer film arranged on that, and at least one metal film made of a refractory metal arranged on that, whereby the diamond is deposited on the at least one metal film.Type: GrantFiled: May 3, 2004Date of Patent: July 8, 2008Assignee: Universität AugsburgInventors: Matthias Schreck, Stefan Gsell, Bernd Stritzker
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Patent number: 7374817Abstract: Disclosed is a transition-metal chalcogenide crystal having a topological configuration/structure. A micro-droplet of a chalcogen element, such as S, Se or Te, is condensed and circulated in suspended form in an atmosphere containing a Group IVb, Vb or VI transition metal element, such as Nb, Ta, Zr, Ti, Hf or W, together with the chalcogen element. Then, micro-whiskers of a transition metal chalcogenide formed in the atmosphere are attached onto a surface of the chalcogen-element micro-droplet by the action of a surface tension of the micro-droplet, and grown as a loop-shaped crystal wound around the surface of the micro-droplet to obtain a loop-shaped crystal having a twist of 0, ? or 2?. The crystal has a ribbon-like open or closed loop configuration. The transition-metal chalcogenide crystal with the topological loop-shaped microstructure can exhibit original properties peculiar to each transition-metal chalcogenide, and has applicability, for example, to a quantum device, such as SQUID.Type: GrantFiled: May 20, 2003Date of Patent: May 20, 2008Assignee: Japan Science and Technology AgencyInventors: Satoshi Tanda, Taku Tsuneta, Yoshitoshi Okajima, Katsuhiko Inagaki, Kazuhiko Yamaya, Noriyuki Hatakenaka
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Patent number: 7288150Abstract: A method has been disclosed for manufacturing a storage phosphor for use in a photostimulable phosphor screen or panel comprising a support and a storage phosphor layer, wherein a dopant or activator is incorporated more homogeneously in amorphous and in crystalline phosphors as well, starting with a mixing step of said matrix component and activator component in stoechiometric ratios in order to provide a desired phosphor composition; and more particularly in order to prepare a CsBr:Eu2+ phosphor having an optimized sensitivity with respect to its particle size.Type: GrantFiled: December 17, 2004Date of Patent: October 30, 2007Assignee: AGFA GevaertInventors: Jean-Pierre Tahon, Johan Lamotte, Paul Leblans
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Patent number: 7267721Abstract: Group IV nanocrystals, such as, for example, silicon nanocrysals and germanium nanocrystals, with chemically accessible surfaces are produced in solution reactions. Group IV halides can be reduced in organic solvents such as 1,2-dimethoxyethane (glyme), with soluable reducing agents to give halide-terminated group IV nanocrystals, which can then be easily functionalized with alkyl lithium, Grignard or other reagents to synthesize group IV nanocrystals having air and moisture stable surfaces. Synthesis can occur at ambient temperature and pressure.Type: GrantFiled: July 28, 2004Date of Patent: September 11, 2007Assignee: Evergreen Solar, Inc.Inventors: Susan M. Kauzlarich, Richard K. Baldwin
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Patent number: 7264675Abstract: In a diamond manufacturing method, a melt of carbon and blue kimberlite is contained in a vessel at 1000° C. The vessel is pressurized by a gas of predominantly hydrogen to 200 atmospheres. A crystallization seed is drawn from the melt to generate a piece of diamond material.Type: GrantFiled: June 10, 2005Date of Patent: September 4, 2007Inventors: Richard L Lewis, Leon Zakinov
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Patent number: 7229497Abstract: A population of nanocrystals having a narrow and controllable size distribution and can be prepared by a continuous flow method.Type: GrantFiled: August 19, 2004Date of Patent: June 12, 2007Assignee: Massachusetts Institute of TechnologyInventors: Nathan E. Stott, Klavs F. Jensen, Moungi G. Bawendi, Brian K. H. Yen