Abstract: Disclosed is a manufacturing method of a diamond substrate, comprising a seed crystal preparing step of preparing seed crystal for a single crystal of high temperature/high pressure grown diamond or for a single crystal of vapor deposition grown diamond, a first growing step of growing the seed crystal through microwave plasma chemical vapor deposition method to obtain a first crystal, a second growing step of growing the first crystal through microwave plasma chemical vapor deposition method to obtain a second crystal, and a third growth step of growing the second crystal through a microwave plasma chemical vapor deposition method to obtain a diamond substrate.

Abstract: A method of fabricating a polycrystalline CVD synthetic diamond wafer is disclosed. A first polycrystalline CVD synthetic diamond wafer is grown using a CVD process to a first thickness on a substrate. A second smaller wafer is cut from the polycrystalline CVD synthetic diamond wafer. The second smaller wafer is located on a carrier, and further polycrystalline CVD synthetic diamond material is grown on the second smaller wafer to a second thickness to give a polycrystalline CVD synthetic diamond material having a total thickness of the combined first and second thicknesses.

Abstract: A heatsink comprising a heat exchange device having a plurality of heat exchange elements each having a surface boundary with respect to a heat transfer fluid, having a fractal variation therebetween, wherein the heat transfer fluid is induced to flow with respect to the plurality of fractally varying heat exchange elements such that flow-induced vortices are generated at non-corresponding locations of the plurality of fractally varying heat exchange elements, resulting in a reduced resonance as compared to a corresponding heat exchange device having a plurality of heat exchange elements that produce flow-induced vortices at corresponding locations on the plurality of heat exchange elements.

Abstract: The present invention provides for a flux composition, and the use thereof in a directional solidification for the purification of silicon.

Abstract: Heterogeneous nanowires having a core-shell structure consisting of single-crystal apatite as the core and graphitic layers as the shell and a synthesis method thereof are provided. More specifically, provided is a method capable of producing large amounts of heterogeneous nanowires, composed of graphitic shells and apatite cores, in a reproducible manner, by preparing a substrate including an element corresponding to X of X6(YO4)3Z which is a chemical formula for apatite, adding to the substrate a gaseous source containing an element corresponding to Y of the chemical formula, adding thereto a gaseous carbon source, and allowing these reactants to react under optimized synthesis conditions using chemical vapor deposition (CVD), and to a method capable of freely controlling the structure and size of the heterogeneous nanowires and also to heterogeneous nanowires synthesized thereby.

Abstract: The present invention provides a metal cluster-carrying metal oxide support wherein a metal cluster obtained by use of a dendrimer is prevented from migrating to the surface of support and being sintered, and a process for production thereof. The process for producing the metal cluster-carrying metal oxide support of the present invention comprises (a) coordinating a first metal ion to a dendrimer 10, (b) reducing the first metal ion coordinated to the dendrimer to precipitate a cluster 6a of the first metal in the dendrimer, (c) further coordinating a second metal ion 8 to the dendrimer, and (d) drying and firing the solution containing this dendrimer on a metal oxide support 9, wherein the oxide of the second metal is the same as the metal oxide constituting the metal oxide support, or a metal oxide capable of forming a composite oxide with the metal oxide constituting the metal oxide support.

Abstract: The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

Abstract: A method and apparatus for growing a crystalline or poly-crystalline body from a melt is described, wherein the melt is retained by capillary attachment to edge features of a mesa crucible. The boundary profile of the resulting melt surface results in an effect which induces a ribbon grown from the surface of the melt to grow as a flat body. Further, the size of the melt pool is substantially reduced by bringing these edges close to the ribbon, thereby reducing the materials cost and electric power cost associated with the process.

Abstract: A method and apparatus for growing a crystalline or poly-crystalline body from a melt is described, wherein the melt is retained by capillary attachment to edge features of a mesa crucible. The boundary profile of the resulting melt surface results in an effect which induces a ribbon grown from the surface of the melt to grow as a flat body. Further, the size of the melt pool is substantially reduced by bringing these edges close to the ribbon, thereby reducing the materials cost and electric power cost associated with the process.

Abstract: A method and apparatus for growing a crystalline or poly-crystalline body from a melt is described, wherein the melt is retained by capillary attachment to edge features of a mesa crucible. The boundary profile of the resulting melt surface results in an effect which induces a ribbon grown from the surface of the melt to grow as a flat body. Further, the size of the melt pool is substantially reduced by bringing these edges close to the ribbon, thereby reducing the materials cost and electric power cost associated with the process.

Abstract: By uniformly forming an indefinite number of microscopic acicular crystals on a surface of a silicon substrate so as to be perpendicular to the surface of the substrate by plasma CVD method using a catalyst, it is possible to reliably, homogeneously and massively form an ultramicroscopic acicular silicon crystal having a substantial cone shape tapered so as to have a radius of curvature of not less than 1 nm to no more than 20 nm at its tip end and having a diameter of bottom surface of not less than 10 nm, and a height equivalent to or more than the diameter of bottom surface, at a desired location.

Abstract: Methods for repair of single crystal superalloys by laser welding and products thereof have been disclosed. The laser welding process may be hand held or automated. Laser types include: CO2, Nd:YAG, diode and fiber lasers. Parameters for operating the laser process are disclosed. Filler materials, which may be either wire or powder superalloys are used to weld at least one portion of a single crystal superalloy substrate.

Abstract: A method is provided for maintaining a planar surface as crystal grains are laterally grown in the fabrication of crystallized silicon films. The method comprises: forming a film of amorphous silicon with a surface and a plurality of areas; irradiating each adjacent areas of the silicon film with a first sequence of laser pulses; and, in response to the first sequence of laser pulses, controlling the planarization of the silicon film surface between adjacent areas of the silicon film as the crystal grains are laterally grown. By controlling the number of laser pulses in the sequence, the temporal separation between pulses, and the relative intensity of the pulses, the lateral growth length characteristics of the crystal grains can be traded against the silicon film flatness. A silicon film formed by a pulsed laser sequence crystallization process is also provided.

Abstract: A method of single crystal welding is provided for the production of a single crystal region (1) on a surface (2) of a moncrystalline substrate (3) by means of an energy beam (4). The method of single crystal welding includes the supply of a coating material (5), the formation of a melt (6) by melting the coating material (5) by means of the energy beam (4) and the melting of a surface layer (71, 72) of the single crystal substrate (3) by the energy beam (4). The characteristic (8) of the energy distribution in the energy beam (4) is set, in this connection, such that the lateral thermal flow (H1) from the melt into the single crystal substrate (3) is minimized.

Abstract: A method is provided for maintaining a planar surface as crystal grains are laterally grown in the fabrication of crystallized silicon films. The method comprises: forming a film of amorphous silicon with a surface and a plurality of areas; irradiating each adjacent areas of the silicon film with a first sequence of laser pulses; and, in response to the first sequence of laser pulses, controlling the planarization of the silicon film surface between adjacent areas of the silicon film as the crystal grains are laterally grown. By controlling the number of laser pulses in the sequence, the temporal separation between pulses, and the relative intensity of the pulses, the lateral growth length characteristics of the crystal grains can be traded against the silicon film flatness. A silicon film formed by a pulsed laser sequence crystallization process is also provided.

Abstract: A technique for making acicular, branched, conductive dendrites, and a technique for using the dendrites to form a conductive compressible pad-on-pad connector are provided. To form the dendrites, a substrate is provided on which dendrites are grown, preferably on a metal film. The dendrites are then removed from the substrate, preferably by etching metal from the substrate. The so formed dendrites are incorporated into a compressible dielectric material, which then forms a compressible pad-on-pad connector between two conducting elements, such as connector pads on electrical devices, e.g. an I/C chip mounted on a substrate, such as a chip carrier.

Abstract: A corner cube array device (20) is disclosed having a silicon substrate (30) with a generally cubic crystal lattice. A number of silicon crystal projections (62a, 62b, 62c, 62d, 62e, 62f, 62g) extend from the substrate (30). The projections (62a, 62b, 62c, 62d, 62e, 62f, 62g) each have three generally planar surfaces, as exemplified by surfaces (70, 72, 74) of projection (62a), to provide a cube corner shape. Projections (62a, 62b, 62c, 62d, 62e, 62f, 62g) are spaced apart from each other in accordance with a predetermined spatial pattern to define a cube corner array (60) suitable for optical device applications and the mass production of articles having a substantially similar corner cube array shape.

Abstract: A process for dendritic web growth is described. The process includes providing a melt, growing a dendritic web crystal from the melt, replenishing the melt during the step of growing the dendritic web crystal, and applying a magnetic field to the melt during the step of growing the dendritic web crystal. An apparatus for stabilizing dendritic web growth is also described. The apparatus includes a crucible including a feed compartment for receiving pellets to facilitate melt replenishment and a growth compartment designed to hold a melt for dendritic web growth. The apparatus further includes a magnetic field generator configured to provide a magnetic field during dendritic web growth.

Abstract: A technique for making acicular, branched, conductive dendrites, and a technique for using the dendrites to form a conductive compressible pad-on-pad connector are provided. To form the dendrites, a substrate is provided on which dendrites are grown, preferably on a metal film. The dendrites are then removed from the substrate, preferably by etching metal from the substrate. The so formed dendrites are incorporated into a compressible dielectric material, which then forms a compressible pad-on-pad connector between two conducting elements, such as connector pads on electrical devices, e.g. an I/C chip mounted on a substrate, such as a chip carrier.

Abstract: A process for dendritic web growth is described. The process includes providing a melt, growing a dendritic web crystal from the melt, replenishing the melt during the step of growing the dendritic web crystal, and applying a magnetic field to the melt during the step of growing the dendritic web crystal.

Abstract: The present invention relates to a manufacturing method for a monocrystal and to a monocrystal manufacturing device. The present invention relates to a technology for manufacturing a granular monocrystal, wherein: melt of melted raw material is made into a supercooled spherical melt; while the melt is levitated under microgravitational conditions, the free energy of a portion of the surface of the melt is reduced, and a monocrystal is grown. A monocrystal manufacturing device 31 comprises: a gold image furnace 35, a chamber 33, a raw material supply/retention mechanism 38; a drop tube 36 and a drop tube 37; a rotating plate 39; a recovery vat 40; and the like. Raw material 32a of semiconductor material is heated and melted and allowed to free fall in a vacuum inside drop tubes 36, 37. During the drop, rotating plate 39 comes into contact with a portion of the surface of supercooled spherical melt 32b, and a crystal nucleus is generated.

Abstract: A method of crystallizing an amorphous silicon layer on a substrate includes the steps of irradiating the amorphous silicon layer by a laser beam positioned over the amorphous silicon layer and having a predetermined repeat rate, while simultaneously partially heating the laser-irradiated part of the amorphous silicon layer upwardly with an RTP, thus crystallizing the amorphous silicon by a laser without damaging the glass substrate by a high temperature.