Small Diameter, Elongate, Generally Cylindrical Single-crystal (e.g., Whiskers, Needles, Filaments, Fibers, Wires) {c30b 29/62} Patents (Class 117/921)
  • Patent number: 11859308
    Abstract: Disclosed is a method for synthesizing a single crystal transition metal dichalcogenide thin film. The method includes processing a surface of a metal substrate such that a high index surface having a Miller index of (hkl) is exposed; and synthesizing a single crystal transition metal dichalcogenide on the high index surface using a chemical vapor deposition, wherein each of h, k, and l is independently an integer, and at least one of h, k, and l is an integer greater than or equal to +2 or smaller than or equal to ?2.
    Type: Grant
    Filed: January 20, 2021
    Date of Patent: January 2, 2024
    Assignee: Research & Business Foundation Sungkyunkwan University
    Inventors: Ki Kang Kim, Soo Ho Choi
  • Patent number: 11634341
    Abstract: A nanostructure is provided that in one embodiment includes a cluster of cylindrical bodies. Each of the cylindrical bodies in the cluster are substantially aligned with one another so that their lengths are substantially parallel. The composition of the cylindrical bodies include tungsten (W) and sulfur (S), and each of the cylindrical bodies has a geometry with at least one dimension that is in the nanoscale. Each cluster of cylindrical bodies may have a width dimension ranging from 0.2 microns to 5.0 microns, and a length greater than 5.0 microns. In some embodiments, the cylindrical bodies are composed of tungsten disulfide (WS2). In another embodiment the nanolog is a particle comprised of external concentric disulfide layers which encloses internal disulfide folds and regions of oxide. Proportions between disulfide and oxide can be tailored by thermal treatment and/or extent of initial synthesis reaction.
    Type: Grant
    Filed: July 14, 2020
    Date of Patent: April 25, 2023
    Assignee: NANOTECH INDUSTRIAL SOLUTIONS
    Inventors: Anna Kossoy, Vladimir Aguf, Alexander Margolin
  • Patent number: 11515184
    Abstract: Siemens process rod growth is controlled by measuring rod diameter by a measuring system A and measuring rod temperature by a measuring system B, the two measuring systems located at different positions outside the reactor.
    Type: Grant
    Filed: December 5, 2017
    Date of Patent: November 29, 2022
    Assignee: WACKER CHEMIE AG
    Inventors: Olaf Seifarth, Stefan Sommerauer, Markus Wenzeis
  • Patent number: 9822151
    Abstract: This disclosure relates to graphene derivatives, as well as related devices including graphene derivatives and methods of using graphene derivatives.
    Type: Grant
    Filed: May 16, 2016
    Date of Patent: November 21, 2017
    Assignee: Research Foundation of The City University of New York
    Inventors: Michele Vittadello, Kamil Woronowicz, Manish Chhowalla, Paul G. Falkowski, John W. Harrold, Jr.
  • Patent number: 8951344
    Abstract: Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of geometrically ordered multi-crystalline silicon may be formed that is free or substantially free of radially-distributed impurities and defects and having at least two dimensions that are each at least about 10 cm is provided.
    Type: Grant
    Filed: January 18, 2007
    Date of Patent: February 10, 2015
    Assignee: AMG Idealcast Solar Corporation
    Inventor: Nathan G. Stoddard
  • Patent number: 8945304
    Abstract: A system and method A method of growing an elongate nanoelement from a growth surface includes: a) cleaning a growth surface on a base element; b) providing an ultrahigh vacuum reaction environment over the cleaned growth surface; c) generating a reactive gas of an atomic material to be used in forming the nanoelement; d) projecting a stream of the reactive gas at the growth surface within the reactive environment while maintaining a vacuum of at most 1×10?4 Pascal; e) growing the elongate nanoelement from the growth surface within the environment while maintaining the pressure of step c); f) after a desired length of nanoelement is attained within the environment, stopping direction of reactive gas into the environment; and g) returning the environment to an ultrahigh vacuum condition.
    Type: Grant
    Filed: August 13, 2008
    Date of Patent: February 3, 2015
    Assignee: The Board of Regents of the Nevada System of Higher Education on behalf of the University of Nevada, Las Vegas University of Nevada
    Inventors: Biswajit Das, Myung B. Lee
  • Patent number: 8685160
    Abstract: Provided is a fullerene thin wires-attached substrate in which fullerene thin wires are vertically aligned relative to the surface of the substrate and which is applicable to catalysts, column materials, chemical synthesis templates, field emission devices, field effect transistors, photonic crystals, etc.
    Type: Grant
    Filed: August 29, 2008
    Date of Patent: April 1, 2014
    Assignee: National Institute for Materials Science
    Inventors: Cha Seung, II, Kunichi Miyazawa, Jedeok Kim
  • Patent number: 8636843
    Abstract: Heterogeneous nanowires having a core-shell structure consisting of single-crystal apatite as the core and graphitic layers as the shell and a synthesis method thereof are provided. More specifically, provided is a method capable of producing large amounts of heterogeneous nanowires, composed of graphitic shells and apatite cores, in a reproducible manner, by preparing a substrate including an element corresponding to X of X6(YO4)3Z which is a chemical formula for apatite, adding to the substrate a gaseous source containing an element corresponding to Y of the chemical formula, adding thereto a gaseous carbon source, and allowing these reactants to react under optimized synthesis conditions using chemical vapor deposition (CVD), and to a method capable of freely controlling the structure and size of the heterogeneous nanowires and also to heterogeneous nanowires synthesized thereby.
    Type: Grant
    Filed: April 6, 2012
    Date of Patent: January 28, 2014
    Assignee: Korea Institute of Energy Research
    Inventors: Nam Jo Jeong, Jung Hoon Lee
  • Patent number: 8491718
    Abstract: A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies.
    Type: Grant
    Filed: October 13, 2010
    Date of Patent: July 23, 2013
    Inventors: Karin Chaudhari, Ashok Chaudhari, Pia Chaudhari
  • Patent number: 8197598
    Abstract: A method for making iron silicide nano-wires comprises the following steps. Firstly, providing a growing substrate and a growing device, the growing device comprising a heating apparatus and a reacting room. Secondly, placing the growing substrate and a quantity of iron powder into the reacting room. Thirdly, introducing a silicon-containing gas into the reacting room. Finally, heating the reacting room to a temperature of 600˜1200° C.
    Type: Grant
    Filed: November 6, 2008
    Date of Patent: June 12, 2012
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Hai-Lin Sun, Kai-Li Jiang, Qun-Qing Li, Shou-Shan Fan
  • Patent number: 7777303
    Abstract: The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.
    Type: Grant
    Filed: March 18, 2003
    Date of Patent: August 17, 2010
    Assignee: The Regents of The University of California
    Inventors: A. Paul Alivisatos, Janke J. Dittmer, Wendy U. Huynh, Delia Milliron
  • Patent number: 7767140
    Abstract: A method for manufacturing ZnO nanowires with a small diameter and increased length and a device comprising the same. The manufacturing method includes: forming a ZnO seed layer containing a hydroxyl group on a substrate; and growing ZnO nanowires on the ZnO seed layer containing the hydroxyl group. Preferably, the ZnO seed layer is a thin ZnO seed layer containing more than 50% of the hydroxyl group.
    Type: Grant
    Filed: July 12, 2006
    Date of Patent: August 3, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yo-sep Min, Eun-ju Bae, Wan-jun Park
  • Patent number: 7763113
    Abstract: The present invention provides a photocatalyst material, which can comprise a photocatalyst with an excellent adherence to a substrate and a high photocatalytic activity, and a production method thereof. The photocatalyst material (20) obtained by reacting crystal nuclei with a sol solution containing an organic metallic compound or the like and then carrying out gelation, solidification and heat treatment has a structure where more than one basic structures (10) are fixed to the surface of the substrate (1). The basic structure consists of abase portion (2) comprising crystal nuclei fixed to the surface of the substrate (1) and a photocatalyst crystalline body (3), which connects to and is extended from the base portion (2) and has a columnar structure having a hollow portion (5) formed therein. A cylindrical substrate may be used for the substrate (1). The above photocatalytic activity is further enhanced by the formation of an interior-exposing structure (8) in a shell portion (4).
    Type: Grant
    Filed: June 14, 2002
    Date of Patent: July 27, 2010
    Assignee: Andre Andes Electric Co., Ltd.
    Inventors: Azuma Ruike, Takeshi Kudo, Yuko Nakamura, Kazuhito Kudo, Fumie Kawanami, Akira Ikegami
  • Patent number: 7745315
    Abstract: A method for forming vertically oriented, crystallographically aligned nanowires (nanocolumns) using monolayer or submonolayer quantities of metal atoms to form uniformly sized metal islands that serve as catalysts for MOCVD growth of Group III nitride nanowires.
    Type: Grant
    Filed: October 3, 2007
    Date of Patent: June 29, 2010
    Assignee: Sandia Corporation
    Inventors: George T. Wang, Qiming Li, J. Randall Creighton
  • Patent number: 7686886
    Abstract: A method for forming a structure of a desired cross-section on a substrate is provided. The method provides a seed structure comprising at least one support layer on the substrate. The support layer has a geometric shape related to the desired cross-section of the structure and is diffusive to a precursor constituent. The method further includes growing the structure by supplying at least one precursor constituent on the substrate. The desired cross-section of the structure is defined by the geometric shape of at least one support layer.
    Type: Grant
    Filed: September 26, 2006
    Date of Patent: March 30, 2010
    Assignee: International Business Machines Corporation
    Inventors: Walter H Riess, Heike E Riel, Siegfried F Karg, Heinz Schmid
  • Patent number: 7670933
    Abstract: A method for growing high quality, nonpolar Group III nitrides using lateral growth from Group III nitride nanowires. The method of nanowire-templated lateral epitaxial growth (NTLEG) employs crystallographically aligned, substantially vertical Group III nitride nanowire arrays grown by metal-catalyzed metal-organic chemical vapor deposition (MOCVD) as templates for the lateral growth and coalescence of virtually crack-free Group III nitride films. This method requires no patterning or separate nitride growth step.
    Type: Grant
    Filed: October 3, 2007
    Date of Patent: March 2, 2010
    Assignee: Sandia Corporation
    Inventors: George T. Wang, Qiming Li, J. Randall Creighton
  • Patent number: 7662706
    Abstract: A method of forming a nanostructure having the form of a tree, comprises a first stage and a second stage. The first stage includes providing one or more catalytic particles on a substrate surface, and growing a first nanowhisker via each catalytic particle. The second stage includes providing, on the periphery of each first nanowhisker, one or more second catalytic particles, and growing, from each second catalytic particle, a second nanowhisker extending transversely from the periphery of the respective first nanowhisker. Further stages may be included to grow one or more further nanowhiskers extending from the nanowhisker(s) of the preceding stage. Heterostructures may be created within the nanowhiskers. Such nanostructures may form the components of a solar cell array or a light emitting flat panel, where the nanowhiskers are formed of a photosensitive material.
    Type: Grant
    Filed: November 12, 2004
    Date of Patent: February 16, 2010
    Assignee: QuNano AB
    Inventors: Lars Ivar Samuelson, Knut Wilfried Deppert
  • Patent number: 7611579
    Abstract: A system for synthesizing nanostructures using chemical vapor deposition (CVD) is provided. The system includes a housing, a porous substrate within the housing, and on a downstream surface of the substrate, a plurality of catalyst particles from which nanostructures can be synthesized upon interaction with a reaction gas moving through the porous substrate. Electrodes may be provided to generate an electric field to support the nanostructures during growth. A method for synthesizing extended length nanostructures is also provided. The nanostructures are useful as heat conductors, heat sinks, windings for electric motors, solenoid, transformers, for making fabric, protective armor, as well as other applications.
    Type: Grant
    Filed: January 14, 2005
    Date of Patent: November 3, 2009
    Assignee: Nanocomp Technologies, Inc.
    Inventors: David Lashmore, Joseph J. Brown, Robert C. Dean, Jr., Peter L. Antoinette
  • Patent number: 7288150
    Abstract: A method has been disclosed for manufacturing a storage phosphor for use in a photostimulable phosphor screen or panel comprising a support and a storage phosphor layer, wherein a dopant or activator is incorporated more homogeneously in amorphous and in crystalline phosphors as well, starting with a mixing step of said matrix component and activator component in stoechiometric ratios in order to provide a desired phosphor composition; and more particularly in order to prepare a CsBr:Eu2+ phosphor having an optimized sensitivity with respect to its particle size.
    Type: Grant
    Filed: December 17, 2004
    Date of Patent: October 30, 2007
    Assignee: AGFA Gevaert
    Inventors: Jean-Pierre Tahon, Johan Lamotte, Paul Leblans
  • Patent number: 7105053
    Abstract: Polysilicon dendrites are grown by depositing silicon on a polysilicon rod or other substrate. Surface temperature is increased to a temperature at which needle-like dendrites develop due to the deposition of silicon from silicon-containing molecules in the surrounding reactor atmosphere. Thereafter, the surface temperature is gradually reduced so that silicon that deposits on the needle-like dendrites causes the dendrites to grow and assume a generally flared shape.
    Type: Grant
    Filed: February 13, 2003
    Date of Patent: September 12, 2006
    Assignee: REC Silicon Inc.
    Inventors: Lyle C. Winterton, John P. Hill
  • Patent number: 6872251
    Abstract: A method for manufacturing single crystal ceramic powder is provided. The method includes a powder supply step for supplying powder consisting essentially of ceramic ingredients to a heat treatment area with a carrier gas, a heat treatment step for heating the powder supplied to the heat treatment area at temperatures required for single-crystallization of the powder to form a product, and a cooling step for cooling the product obtained in the heat treatment step to form single crystal ceramic powder. The method provides single crystal ceramic powder consisting of particles with a very small particle size and a sphericity being 0.9 or higher.
    Type: Grant
    Filed: May 29, 2002
    Date of Patent: March 29, 2005
    Assignee: TDK Corporation
    Inventors: Minoru Takaya, Yoshiaki Akachi, Hiroyuki Uematsu, Hisashi Kobuke
  • Patent number: 6841003
    Abstract: Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. After the nanotubes have been grown, a purification step is performed on the newly formed nanotube structures. The purification removes graphite and other carbon particles from the walls of the grown nanotubes and controls the thickness of the nanotube layer. The purification is performed with the plasma at the same substrate temperature. For the purification, the hydrogen containing gas added as an additive to the source gas for the plasma chemical deposition is used as the plasma source gas. Because the source gas for the purification plasma is added as an additive to the source gas for the chemical plasma deposition, the grown carbon nanotubes are purified by reacting with the continuous plasma which is sustained in the plasma process chamber. This eliminates the need to purge and evacuate the plasma process chamber as well as to stabilize the pressure with the purification plasma source gas.
    Type: Grant
    Filed: November 22, 2002
    Date of Patent: January 11, 2005
    Assignee: cDream Display Corporation
    Inventors: Sung Gu Kang, Craig Bae
  • Patent number: 6841002
    Abstract: Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. After the nanotubes have been grown, a post-treatment step is performed on the newly formed nanotube structures. The post-treatment removes graphite and other carbon particles from the walls of the grown nanotubes and controls the thickness of the nanotube layer. The post-treatment is performed with the plasma at the same substrate temperature. For the post-treatment, the hydrogen containing gas is used as a plasma source gas. During the transition from the nanotube growth step to the post-treatment step, the pressure in the plasma process chamber is stabilized with the aforementioned purifying gas without shutting off the plasma in the chamber. This eliminates the need to purge and evacuate the plasma process chamber.
    Type: Grant
    Filed: November 22, 2002
    Date of Patent: January 11, 2005
    Assignee: cDream Display Corporation
    Inventors: Sung Gu Kang, Craig Bae
  • Patent number: 6596078
    Abstract: A method of producing oxide whiskers is provided which comprises heating a source material comprised of a metal or an inorganic compound at a first temperature to be vaporized and depositing a crystal constitutive material vaporized from the source material on a substrate heated at a second temperature lower than the first temperature.
    Type: Grant
    Filed: September 20, 2001
    Date of Patent: July 22, 2003
    Assignee: Canon Kabushiki Kaisha
    Inventors: Kaoru Konakahara, Hiroshi Okura, Tohru Den
  • Patent number: 6531513
    Abstract: Carbon nanotubes are dissolved in organic solutions by attaching an aliphatic carbon chain (which may contain aromatic residues) so as to render the carbon nanotubes soluble.
    Type: Grant
    Filed: February 28, 2001
    Date of Patent: March 11, 2003
    Assignee: University of Kentucky Research Foundation
    Inventors: Robert C. Haddon, Mark A. Hamon
  • Patent number: 6458206
    Abstract: AFM/STM probes are based on whiskers grown by the vapor-liquid-solid (VLS) mechanism. Silicon cantilevers oriented along the crystallographic plane (111) are prepared from silicon-on-insulator structures that contain a thin layer (111) on a (100) substrate with SiO2 interposed layer. At removal of solidified alloy globules inherent in the growth mechanism sharpening of the whiskers takes place and, in such a way, the probes are formed. Cross-sections of the wiskers grown by the mechanism on the cantilevers can be controllably changed during the growth process so that step-shaped whiskers optimal for fabrication of the probes can be prepared. Also, whiskers with expansions/contractions can be formed that are important for fabrication of probes suitable for investigations in coarse surfaces, complicated cavitites, grooves typical for semiconductor microelectronics, etc.
    Type: Grant
    Filed: March 9, 2001
    Date of Patent: October 1, 2002
    Assignee: Crystals and Technologies, Ltd.
    Inventors: Evgeny Invievich Givargizov, Lidiya Nikolaevna Obolenskaya, Ala Nikolaevna Stepanova, Evgeniya Sergeevna Mashkova, Michail Evgenievich Givargizov
  • Patent number: 6451113
    Abstract: A method for growing of oriented whisker arrays on a single-crystalline substrate consists in vapor-phase transport of the material to be crystallized from a solid-state source body of the same composition as the whiskers to the substrate coated with liquid-phase particles that serve as nucleation/catalyzing centers for the whisker growth. The source body has a plane surface that is faced to the substrate and parallel to it so that a vectorly-uniformn temperature field, whose gradient is perpendicular to both the substrate and the source, is created. The vectorly-uniform temperature field is realized by an apparatus with high-frequency heating of specially designed bodies that are arranged in a special position in respect to the high-frequency inductor. Laser and/or lamp heat sources can be also used either separately or in combinations with the high-frequency heater. In the apparatus, the material source is heated, while the substrate takes. heat from the material source.
    Type: Grant
    Filed: May 11, 2000
    Date of Patent: September 17, 2002
    Inventor: Evgeny Invievich Givargizov
  • Patent number: 6440213
    Abstract: Disclosed is a process for making surfactant capped nanocrystals of transition metal oxides. The process comprises reacting a metal cupferron complex of the formula M Cup, wherein M is a transition metal, and Cup is a cupferron, with a coordinating surfactant, the reaction being conducted at a temperature ranging from about 250 to about 300 C., for a period of time sufficient to complete the reaction.
    Type: Grant
    Filed: October 30, 2000
    Date of Patent: August 27, 2002
    Assignee: The Regents of the University of California
    Inventors: A Paul Alivisatos, Joerg Rockenberger
  • Patent number: 6270571
    Abstract: A method for producing narrow wires including titanium oxide of high crystallinity and diameter of the order of nanometer, in particular whiskers of titanium oxide, and including a first step of preparing a base having a titanium-including surface, second step of discretely depositing a material other than titanium over the above surface, and third step of thermally treating the above surface, obtained by the second step, in a titanium-oxidizing atmosphere.
    Type: Grant
    Filed: November 9, 1999
    Date of Patent: August 7, 2001
    Assignee: Canon Kabushiki Kaisha
    Inventors: Tatsuya Iwasaki, Tohru Den
  • Patent number: 6187823
    Abstract: Naked single-walled nanotube carbon metals and semiconductors are dissolved in organic solutions by direct functionalization with amines or alkylaryl amines having an uninterrupted carbon chain of at least 5 and more preferably 9 carbon atoms in length.
    Type: Grant
    Filed: September 29, 1999
    Date of Patent: February 13, 2001
    Assignee: University of Kentucky Research Foundation
    Inventors: Robert C. Haddon, Jian Chen
  • Patent number: 6159831
    Abstract: A method is disclosed for forming an array of submicron-sized wires in a host body. In the method, the vapor of a metal, such as bismuth, is caused to flow upward through a horizontal refractory plate having many through holes, 200 nanometers or less in diameter, until all foreign material is excluded from the holes and then the plate is cooled from the top side to progressively and simultaneously condense said vapor to form said wires in the holes.
    Type: Grant
    Filed: October 5, 1998
    Date of Patent: December 12, 2000
    Assignees: General Motors Corporation, Delphi Technologies Inc.
    Inventors: Christopher Mark Thrush, Joseph Pierre Heremans
  • Patent number: 6110275
    Abstract: There is disclosed a method of producing, in large volume and at low cost, titanium carbide, nitride and carbonitride whiskers, with preferably submicron diameters, to be used as reinforcing material. The whiskers are suitable for use as a reinforcement material in a wide range of materials, including metals, intermetallics, plastics, ceramics and metallic bonded hard material. Titanium oxide, hydroxide or alkali compounds thereof are mixed with a carbon source with a volatile part which volatiles at temperatures exceeding 500.degree. C. and in an amount to satisfy the stoichiometric requirements of the carbide or nitride. A halogenide salt is used as a volatilization agent for titanium as well as a catalyst able to dissolve Ti plus C and/or N, such as Ni or Co. The reactant powders are blended in some typical manner, e.g., by using a high speed blender so as to intimately mix them.
    Type: Grant
    Filed: December 20, 1996
    Date of Patent: August 29, 2000
    Assignee: Sandvik AB
    Inventors: Mats Nygren, Mats Johnsson, Niklas Ahlen, Magnus Ekelund
  • Patent number: 6036774
    Abstract: Methods of preparing metal oxide nanorods are described. The metal oxide nanorods have diameters between 1 and 200 nm and aspect ratios between 5 and 2000. The methods include the steps of generating a metal vapor in a furnace, exposing the nanorod growth substrate to the metal vapor within a growth zone in the furnace for a sufficient time to grow metal oxide nanorods on a surface of the nanorod growth substrate, removing the nanorod growth substrate from the growth zone after the sufficient time to grow metal oxide nanorods on a surface of the nanorod growth substrate, and removing the metal oxide nanorods from the furnace. The methods can be used to prepared large quantities of metal oxide nanorods.
    Type: Grant
    Filed: January 22, 1997
    Date of Patent: March 14, 2000
    Assignee: President and Fellows of Harvard College
    Inventors: Charles M. Lieber, Peidong Yang
  • Patent number: 5958358
    Abstract: A method of preparing a polycrystalline thin film of a transition metal chalcogenide of an orientation on a substrate which includes (a) depositing a layer of a transition metal material or mixtures thereof on the substrate; and (b) heating the layer in an open system in a gaseous reducing atmosphere containing one or more chalcogen materials for a time sufficient to allow the transition metal material and the chalcogen material to react and form the oriented polycrystalline thin film, the thin film being substantially exclusively oriented in the orientation. Also provided is a method of synthesizing structures of a transition metal chalcogenide selected from the group consisting of single layer or nested or stuffed inorganic fullerenes and nanotubes, including the step of reacting a transition metal compound with a volatile chalcogen compound in a reducing atmosphere at a temperature between about 750.degree. C. and about 1000.degree. C.
    Type: Grant
    Filed: June 3, 1996
    Date of Patent: September 28, 1999
    Assignee: Yeda Research and Development Co., Ltd.
    Inventors: Reshef Tenne, Gary Hodes, Lev Margulis
  • Patent number: 5853477
    Abstract: There is disclosed a method of producing, in large volumes and at low cost, Ta, Nb, Zr and Hf carbide, nitride or carbonitride whiskers, preferably submicron, having excellent reinforcing properties, suitable as reinforcement in a wide range of materials, including metals, intermetallics, plastics, ceramics and metallic bonded hard material. Oxides of Ta, Nb, Zr and Hf or alkali compounds thereof in an amount to satisfy the stoichiometric requirements of the desired carbide or nitride are mixed with the carbon source along with an alkali and/or alkali earth metal halogenide as a volatilization agent for the metal and a catalyst for the whisker growth such as Ni and/or Co. The reactant powders are blended in some typical manner using a high speed blender so as to intimately mix them. Finally, the starting material is subjected to nitriding, carbonizing or carbonitriding heat treatments in order to produce the desired whiskers.
    Type: Grant
    Filed: December 20, 1996
    Date of Patent: December 29, 1998
    Assignees: Sandvik AB, Advanced Industrial Materials
    Inventors: R. Tom Coyle, Magnus Ekelund, Mats Nygren, Mats Johnsson
  • Patent number: 5851285
    Abstract: There is disclosed a method of producing whiskers in large volumes and at low cost to be used as reinforcing material. The whiskers are solid solutions between two or more transition metal carbides, nitrides and carbonitrides, (Me.sub.1-X-Y.sub.Me'.sub.X+Y)C.sub.1-Z N.sub.Z, having preferably submicron diameters, where Me' is one or more transition metals other than Me. The whiskers are suitable for use as a reinforcement material in a wide range of materials, including metals, intermetallics, plastics, ceramics and metallic bonded hard material. Transition metal oxides, hydroxides or alkali compounds thereof are mixed with carbon powder. The carbon source is added in an amount to satisfy the stoichiometric requirements of the carbide or nitride. A halogenide salt is used as a volatilization agent for the transition metals and a catalyst such as Ni or Co that is able to dissolve transition metals plus C and/or N. The reactant powders are blended so as to intimately mix them.
    Type: Grant
    Filed: December 20, 1996
    Date of Patent: December 22, 1998
    Assignee: Sandvik AB
    Inventors: Mats Johnsson, Niklas Ahlen, Mats Nygren, Magnus Ekelund, Gunnar Brandt
  • Patent number: 5795384
    Abstract: The presently claimed invention relates to a method of producing, in large volumes and at low cost, transition metal carbide, nitride or carbonitride whiskers, preferably submicron, having excellent reinforcing properties. These whiskers are suitable for use as a reinforcement in a wide range of materials, including metals, intermetallics, plastics, ceramics and metallic bonded hard material. The basic idea is the use of a carbon source with a volatile part which volatiles at temperatures up to 1000.degree. C. Transition metal oxide or alkali compounds thereof in amounts to satisfy the stoichiometric requirements of the desired carbide or nitride is mixed with the carbon powder along with an alkali metal chloride powder as a volatilization agent for the metal and a catalyst for the whisker growth such as Ni or Co. The reactant powders are blended in some typical manner using a high speed blender so as to intimately mix them.
    Type: Grant
    Filed: July 20, 1995
    Date of Patent: August 18, 1998
    Assignees: Sandvik AB, Advanced Industrial Materials
    Inventors: Roy Tom Coyle, Jan Magnus Ekelund
  • Patent number: 5728214
    Abstract: When a cuprate oxide LnBa.sub.2 Cu.sub.3 O.sub.7-x (Ln=Y, Pr or Sm; 0.30.ltoreq.x.ltoreq.1) single crystal is heated for growing a film epitaxially on the crystal or for smoothing a damaged surface of the single crystal, many large protrusions occur on the surface of the oxide single crystal substrate or the film. The smooth surface of the oxides becomes rugged by the protrusions. According to the present invention, however, the oxide substrate or the oxide superconductor film can be heated in an atmosphere including oxygen of a partial pressure between 50 mTorr and 200 mTorr to prevent the protrusions from originating on the surface of the heated oxides.
    Type: Grant
    Filed: September 6, 1995
    Date of Patent: March 17, 1998
    Assignees: Sumitomo Electric Industries, Ltd., Kabushiki Kaisha Toshiba, International Superconductivity Technology Center
    Inventors: Masaya Konishi, Hiroyuki Fuke, Youichi Enomoto, Yuh Shiohara, Shoji Tanaka
  • Patent number: 5688320
    Abstract: Aluminum nitride whiskers are produced by reducing alumina with carbon in a nitrogen atmosphere, at a temperature of 1800.degree. to 2000.degree. C., in the presence of a growth activator containing a solvent element, according to a process that essentially comprises the step of periodically feeding, through the working area of a horizontal furnace equipped with a graphite heating device, counter to a flow of nitrogen, a graphite container charged with a mixture of alumina, carbon and carbonyl iron, as a growth activator, which is present in an amount capable of implementing the VLS mechanism, the time taken by the container to pass through the working zone being in the range of 20 to 120 minutes.
    Type: Grant
    Filed: June 17, 1996
    Date of Patent: November 18, 1997
    Assignees: Societe Nationale Industrielle et Aerospatiale, VIAM-ALL Russian Institut of Aviation Materials
    Inventors: Vladimir Nikolaevich Gribkov, Boris Vladimirovich Shchetanov, Eric Loguinovitch Umantsev, Vladimir Alexandrovich Silaev, Yurii Alexeevich Gorelov, Piotr Phiodorovich Lyasota
  • Patent number: 5650007
    Abstract: Spinel single crystal filaments are produced by a method which consists essentially of solidifying in one direction a melt consisting essentially of 30 to 70% by weight of magnesium oxide, 10 to 45% by weight of aluminum oxide, and 15 to 45% by weight of silicon dioxide, thereby forming a composite texture containing a matrix of forsterite and filaments of spinel dispersed in the matrix, and then separating the filaments of spinel from the composite texture.
    Type: Grant
    Filed: March 11, 1996
    Date of Patent: July 22, 1997
    Assignee: Agency of Industrial Science & Technology, Ministry of International Trade & Industry
    Inventors: Shoji Kawakami, Hideyo Tabata, Toyoaki Yamada, Shunsaku Sakakibara
  • Patent number: 5628823
    Abstract: A silicon single crystal prepared by the Czochralski method including a neck having an upper portion, an intermediate portion, and a lower portion. The upper portion contains dislocations. The intermediate portion is between the upper and lower portions. A majority of the intermediate and lower portions has a diameter greater than 10 millimeters, and the lower portion is free of dislocations. The crystal also includes an outwardly flaring segment adjacent the lower portion of the neck, and a body adjacent the outwardly flaring segment.
    Type: Grant
    Filed: July 3, 1996
    Date of Patent: May 13, 1997
    Assignee: MEMC Electronic Materials, Inc.
    Inventors: Sadasivam Chandrasekhar, Kyong-Min Kim
  • Patent number: 5620511
    Abstract: Disclosed in this invention is a method of preparing a whisker-preform comprising the steps of (a) uniformly dispersing a mixture of silicon microparticles and carbon fibers in the ratio of 4:1 to 8:1 into aluminium alkoxide solution; (b) filtering the dispersion obtained in step (a), dehydrating the filtered material, forming and drying the dehydrated material; and (c) heating the material dried in step (b) at a temperature in the range of 300.degree. to 400.degree. C.
    Type: Grant
    Filed: November 27, 1995
    Date of Patent: April 15, 1997
    Assignee: Hyundai Motor Company
    Inventors: Junsu Kim, Bumgoo Chung
  • Patent number: 5544617
    Abstract: A method for producing a single crystal, which comprises (1) placing a metal layer as a pattern at a desired position on the surface of a single crystal substrate, (2) etching the surface of the single crystal substrate around the pattern, and (3) in a raw material gas atmosphere containing an element or elements constituting the single crystal, taking the element or elements in the metal layer at the pattern and permitting a needle-like single crystal to grow perpendicularly.
    Type: Grant
    Filed: April 14, 1995
    Date of Patent: August 13, 1996
    Assignee: Denki Kagaku Kogyo Kabushiki Kaisha
    Inventors: Yoshinori Terui, Ryuichi Terasaki
  • Patent number: 5499601
    Abstract: Diamond particles are dispersed in a metal and the metal matrix is molten and recrystallized so that the diamond particles are aligned to the same crystal orientation to form a substrate equivalent to a diamond single crystal substrate and then the diamond is grown by a vapor phase synthesis on the substrate. The diamond single crystal having the homogeneity and good quality can be formed and the diamond single crystal having a large area can be easily and economically obtained.
    Type: Grant
    Filed: September 14, 1994
    Date of Patent: March 19, 1996
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Takahiro Imai, Takashi Tsuno, Yoshiyuki Yamamoto, Naoji Fujimori
  • Patent number: 5404836
    Abstract: Described herein is a method and apparatus for continuously growing single crystal whiskers of silicon carbide, silicon nitride, boron carbide and boron nitride by the VLS process under controlled reaction conditions. A growth substrate such as a plate of solid graphite is coated with a suitable VLS catalyst and is conveyed through a tubular furnace, into which is separately introduced two feed gases. The first feed gas contains a cationic suboxide precursor such as silicon monoxide or boron monoxide. The second feed gas contains an anionic precursor compound such as methane or ammonia. The precursor compounds react upon exposure to the catalyst by the VLS process to produce crystalline whiskers. The associated apparatus includes a conveyor assembly that continuously circulates multiple substrate growth plates through the furnace and past a harvesting device which brushes the whiskers from the plates and removes them by vacuum collection. Whiskers of uniform size, shape, and purity are produced.
    Type: Grant
    Filed: November 9, 1989
    Date of Patent: April 11, 1995
    Inventor: John V. Milewski
  • Patent number: 5383421
    Abstract: Beta-silicon carbide whiskers of superior uniformity can be formed, either singly or in-situ in a matrix, by heating a source for silicon with a source of carbon (greater than 0 percent but less than or equal to about 60 percent of stoichiometric, with respect to the silicon source) in the presence of a titanium-containing catalyst, such as titanocene dichloride. Advantageously, the titanium catalyst can be applied by drying a solution of the titanium catalyst on the carbon and silicon sources. The titanium, carbon and silicon sources are then heated together, preferably to between about 1800.degree. C. and about 1850.degree. C., resulting in a product containing high quality beta-silicon carbide whiskers.
    Type: Grant
    Filed: May 19, 1993
    Date of Patent: January 24, 1995
    Assignee: The Dow Chemical Company
    Inventors: Stephen D. Dunmead, Kevin E. Howard
  • Patent number: 5381753
    Abstract: A fabrication method provides fine structures which have few carrier trap centers and light absorption levels and find applications in quantum wires and quantum boxes having arbitrary configurations at least within a two-dimensional plane. The fabrication method comprises the steps of having a sharp tip held in close proximity to the surface of a substrate 1 and having a metal constituting the tip evaporated from the top. Alternatively, a metal contained in ambient vapor or a solution decomposed by a tunnel current or the like is provided. The metal is deposited locally on the substrate surface. A finely structured crystal is grown on the locally deposited region by a vapor phase-liquid phase-solid phase reaction.
    Type: Grant
    Filed: April 30, 1993
    Date of Patent: January 17, 1995
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Michio Okajima, Osamu Kusumoto, Takao Tohda, Kazuo Yokoyama, Motoshi Shibata
  • Patent number: 5330612
    Abstract: A single-crystal substrate is prepared which has the (100) crystal plane with a step line formed therein by cleaving an MgO single crystal. By evaporating metal onto the cleavage plane, with a mask wire of platinum disposed at a distance from the cleavage plane and extended in a direction across the step line, a pair of metal thin film electrodes separated by a gap are epitaxially grown. By this, a step line corresponding to the cleavage-plane step line is formed in the surface of each of the metal thin film electrodes. Metal is further evaporated onto the metal thin film electrodes at a low rate, by which nano-size thin wires extending along the step lines are grown so that they approach each other and are finally connected to each other.
    Type: Grant
    Filed: September 30, 1992
    Date of Patent: July 19, 1994
    Assignee: Advantest Corporation
    Inventor: Masao Watanabe