Abstract: In a cylindrical grinding method, rough grinding is performed until a diameter of a workpiece reaches a rough-grinding setting value, and then, first finish grinding is performed until the diameter of the workpiece reaches a first finish setting value while measuring a shape deviation amount of an outer peripheral surface of the workpiece from a perfect round shape. The rough-grinding setting value in the next-time rough grinding step is changed based on a necessary time of the first finish grinding step to time at which the shape deviation amount reaches a first threshold or smaller in the first finish grinding step, and based on a total required time for the first finish grinding step.

Abstract: The invention relates to a device for dressing a grinding wheel, comprising a sleeve to hold a corundum rod laterally and to guide it along its longitudinal axis, a ram to apply constant thrust force onto the corundum rod held in place and guided in the sleeve, to bring it into contact with the grinding wheel, means of rigidly connecting the ram shaft to the end of the corundum rod, and linear guide means for the sleeve for translating the corundum rod parallel to the axis of the grinding wheel while keeping the rod pressed against the grinding wheel with a constant force. Application to a centerless grinder in which the grinding wheel is used to grind nuclear fuel pellets.

Abstract: According to the present invention, in a method for subjecting a roughly ground chamfer portion of a semiconductor wafer to helical grinding by relatively inclining the wafer and a second grinding stone to perform precise grinding, an edge portion of a discoid truer is formed into a vertically asymmetrical groove shape of a first grinding stone by using the first grinding stone having a vertically asymmetrical groove formed on a periphery thereof to grind the edge portion of the truer by the groove of the first grinding stone without being relatively inclined, a groove is formed on a periphery of the second grinding stone by relatively inclining the truer and the second grinding stone to subject the second grinding stone to helical grinding, and the chamfer portion of the wafer is precisely ground based on helical grinding by relatively inclining the semiconductor wafer with respect to a direction of the groove formed on the periphery of the second grinding stone.