Lens Type Patents (Class 136/215)
  • Patent number: 10488262
    Abstract: An integrated circuit includes a first detection element that detects a temperature of an object based on infrared light reflected from the object and a second detection element that detects an image of the object based on visible light reflected from the object on the same substrate.
    Type: Grant
    Filed: April 5, 2016
    Date of Patent: November 26, 2019
    Assignee: SHARP KABUSHIKI KAISHA
    Inventors: Ryohichi Masuda, Hidenori Kawanishi
  • Patent number: 9759609
    Abstract: An inexpensive thermopile temperature detector is particularly adapted to monitoring of electrical equipment, such as a power bus bar, within an enclosed area such as a cabinet. The detector may have a plastic housing, a thermopile sensor and a plastic Fresnel lens. Each sensor also includes a calibrated element such that, but for calibration, the same sensor may be used for various applications for different target sizes and distance or, more generally, with respect to effective target percentage of field of view.
    Type: Grant
    Filed: October 23, 2015
    Date of Patent: September 12, 2017
    Assignee: Exergen Corporation
    Inventor: Francesco Pompei
  • Patent number: 9759610
    Abstract: A method for dissolved gas analysis is presented. The method includes the steps of irradiating a fluid with electromagnetic radiation; and determining a concentration of a gas as a function of a temperature change of the fluid in response to the irradiation. A device for such an analysis of dissolved gases in a fluid, and a system having such device are also described.
    Type: Grant
    Filed: July 25, 2013
    Date of Patent: September 12, 2017
    Assignee: GENERAL ELECTRIC COMPANY
    Inventors: Sandip Maity, Nagapriya Kavoori Sethumadhavan, Shashank Sinha
  • Patent number: 8193440
    Abstract: A device for producing energy and power utilizing incoming solar radiation to invoke a thermal differential inside the device to produce an electric current utilizing a phenomenon more commonly known as the Seebeck effect, which produces energy by heating the junction between two dissimilar metals to create an electric current stemming from both their other ends.
    Type: Grant
    Filed: April 15, 2009
    Date of Patent: June 5, 2012
    Inventor: Hussein M. A. Hajjar
  • Patent number: 6713668
    Abstract: A solar energy converter includes: a light-concentrating instrument; an electron emitter in an insulated vacuum vessel, emitting electrons in a vacuum as a temperature rises by sunlight; an electron accelerator within the light-concentrating instrument; a cathode on a surface of the electron emitter opposite to a surface which is irradiated by sunlight, and electrically connected with the electron emitter; an electric field supplier having a positive terminal and a negative terminal; and an electron collector in the vacuum vessel, collecting the emitted electrons flying from the electron emitter toward the electron accelerator; wherein the electron accelerator is connected with the positive terminal and the cathode is connected with the negative terminal to generate an electric field, and the electron collector is used as a negative generator electrode and the cathode is used as a positive generator electrode in which the collected electrons migrate to the electron emitter to generate electricity.
    Type: Grant
    Filed: May 23, 2002
    Date of Patent: March 30, 2004
    Inventor: Norio Akamatsu
  • Patent number: 6653547
    Abstract: The solar energy converter comprises an electron emitter and an electron collector. They are provided separate from each other in a vacuum vessel. Solar energy in a wide range of sunlight spectrum can be efficiently converted into electric energy by moving electrons from the electron emitter to the electron collector.
    Type: Grant
    Filed: November 14, 2001
    Date of Patent: November 25, 2003
    Inventor: Norio Akamatsu
  • Patent number: 6300554
    Abstract: A thermoelectric sensor device is disclosed consisting of polysilicon, titanium or AlSiCu as the thermocouple of material for thermoelectric sensor device. The features of the present process are: Selecting a material such as aluminum, titanium, aluminum alloy or titanium alloy with lower thermal conductivity coefficient as thermocouple element line and making use of zigzag structure with thermocouple element line, and increasing the length of thermocouple element line. Employing front side Si bulk etching technique to etch the silicon substrate, which is under the device and empty of silicon substrate, so as to reduce the superficial measure of thermoelectric sensor module and increase the throughout of the silicon wafer. Simultaneously, fabricating a resistor to treat as a heater on the membrane for adjusting the device.
    Type: Grant
    Filed: September 9, 1999
    Date of Patent: October 9, 2001
    Assignee: Metrodyne Microsystem Corp.
    Inventors: Chen-Hsun Du, Bruce C. S. Chou, Chengkuo Lee
  • Patent number: 4665276
    Abstract: This invention concerns a thermoelectric sensor of the air-backed type comprising a thin-film thermopile with a receiving area of approximately 1 mm.sup.2 under a protective atmosphere of atmospheric pressure. To increase the responsivity of such sensors the sensing junctions of at least 25 thermocouples whose legs have comparable coefficients of thermal conductivity are arranged in the receiving area with the legs having an average breadth-to-length ratio of at least 1:20.
    Type: Grant
    Filed: November 15, 1984
    Date of Patent: May 12, 1987
    Assignee: Kombinat VEB Keramische Werke Hermsdorf
    Inventors: Thomas Elbel, Jurgen Muller, Friedemann Volklein
  • Patent number: 4211888
    Abstract: A thermal element arrangement having a plurality of thermal elements connected in series, and in which an insulation layer has thereon a plurality of metal conductor paths situated on the semiconductor substrate. Each thermal element has one of the metal conductor paths forming a first leg and a semiconductor region forming a second leg. A thermal contact is included having a metal semiconductor contact with the respective semiconductor regions. The semiconductor substrate is less than 10 .mu.m thick in the region where the thermal contacts which are to be heated up is located. Elsewhere, the substrate has a thickness of more than 200 .mu.m which is in that region in which there are situated the contacts which are to be kept cold during the operation of the arrangement. One preferred arrangement has the thermal contacts to be heated during operation surrounded in a star-shaped manner by thermal contacts which are to be kept cold.
    Type: Grant
    Filed: June 28, 1978
    Date of Patent: July 8, 1980
    Assignee: Siemens Aktiengesellschaft
    Inventors: Karl-Ulrich Stein, Heiner Herbst, Dietrich Widmann