Abstract: A thermoelectric material including a thermoelectric matrix; and nano-inclusions in the thermoelectric matrix, the nano-inclusions having an average particle diameter of about 10 nanometers to about 30 nanometers.

Abstract: A thermoelectric material including a compound represented by Formula 1 below: (R1-aR?a)(T1-bT?b)3±y??Formula 1 wherein R and R? are different from each other, and each includes at least one element selected from a rare-earth element and a transition metal, T and T? are different from each other, and each includes at least one element selected from sulfur (S), selenium (Se), tellurium (Te), phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), carbon (C), silicon (Si), germanium (Ge), tin (Sn), boron (B), aluminum (Al), gallium (Ga), and indium (In), 0?a?1, 0?b?1, and 0?y<1.

Abstract: The disclosure provides a thermoelectric composite sandwich structure with an integrated honeycomb core and method for making. The thermoelectric composite sandwich structure comprises two prepreg composite face sheets and an integrated honeycomb core assembled between the face sheets. The honeycomb core comprises a plurality of core elements bonded together with a core adhesive. Each core element has a first side substantially coated with a negative Seebeck coefficient conductive material having a plurality of first spaced gaps, and each core element further has a second side substantially coated with a positive Seebeck coefficient conductive material having a plurality of second spaced gaps. The honeycomb core further comprises a plurality of electrical connections for connecting in series the first side to the second side. A temperature gradient across the honeycomb core generates power.

Abstract: A thermoelectric material and a method of making a thermoelectric material are provided. In certain embodiments, the thermoelectric material comprises at least 10 volume percent porosity. In some embodiments, the thermoelectric material has a zT greater than about 1.2 at a temperature of about 375 K. In some embodiments, the thermoelectric material comprises a topological thermoelectric material. In some embodiments, the thermoelectric material comprises a general composition of (Bi1-xSbx)u(Te1-ySey)w, wherein 0?x?1, 0?y?1, 1.8?u?2.2, 2.8?w?3.2. In further embodiments, the thermoelectric material includes a compound having at least one group IV element and at least one group VI element. In certain embodiments, the method includes providing a powder comprising a thermoelectric composition, pressing the powder, and sintering the powder to form the thermoelectric material.

Abstract: Thermoelectric elements may be used for heat sensors, heat pumps, and thermoelectric generators. A quantum-dot or nano-scale grain size polycrystalline material the effects of size-quantization are present inside the nanocrystals. A thermoelectric element composed of densified Groups IV-VI material, such as calcogenide-based materials are doped with metal or chalcogenide to form interference barriers form along grains. The dopant used is either silver or sodium. These chalcogenide materials form nanoparticles of highly crystal grains, and may specifically be between 1- and 100 nm. The compound is densified by spark plasma sintering.

Abstract: A thermoelectric segment and a method for fabricating. The fabricating includes forming structures by depositing thin-film metal-semiconductor multilayers on substrates and depositing metal layers on the multilayers, joining metal bonding layers to form dual structures with combined bonding layers; and removing at least one of the substrates; and using the dual structure to form a thermoelectric segments. The method can include dicing the dual structures before or after removing the substrates. The method can include depositing additional bonding layers and joining dual structures to make thermoelectric segments of different thicknesses. Each multilayer can be about 5-10 ?m thick. Each bonding layer can be about 1-2 ?m thick. The bonding layers can be made of a material having high thermal and electrical conductivity. The multilayers can be (Hf,Zr,Ti,W)N/(Sc,Y,La,Ga,In,Al)N superlattice layers. Metal nitride layers can be deposited between each of the bonding layers and multilayers.

Abstract: This disclosure examines using lead telluride nanocrystals as well as other materials suitable for thermoelectric conversion, particularly materials with high Figure of Merit values, as coatings on flexible substrates. This disclosure also examines using flexible substrates with lead telluride nanocrystal coatings as sensors.

Abstract: An improved circular multi-element semiconductor thermoelectric hybrid utilizes a make-before-break high frequency switching output component to provide nominal alternating current voltage outputs. Overall efficiency of heat conversion is improved by coupling a chiller to the thermoelectric generator where exhaust heat produces chilled liquid or air that is conveyed to the cold side of the thermoelectric device. The thermoelectric generator is used in a variety of transportation vehicles including manufactured vehicles, retrofitted vehicles and vehicle power combinations.

Abstract: A thermoelectric material includes a compound represented by Formula 1: AaRbG3±n??Formula 1 wherein component A includes at least one element selected from a Group 1 element, a Group 2 element, and a metal of Groups 3 to 12, component R is a rare-earth element, component G includes at least one element selected from sulfur (S), selenium (Se), tellurium (Te), phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), carbon (C), silicon (Si), germanium (Ge), tin (Sn), boron (B), aluminum (Al), gallium (Ga), and indium (In), 0<a?1, 0<b?1, and 0?n<1.

Abstract: The present invention relates to a thermoelectric device using a bulk material of a nano type, a thermoelectric module having the thermoelectric device and a method of manufacturing thereof. According to the present invention, thin film of a nano thickness is formed on a bulk material formed as several nano types to be re-connected for prohibiting the phonon course.

Abstract: The disclosure provides a thermoelectric composite sandwich structure with an integrated honeycomb core and method for making. The thermoelectric composite sandwich structure comprises two prepreg composite face sheets and an integrated honeycomb core assembled between the face sheets. The honeycomb core comprises a plurality of core elements bonded together with a core adhesive. Each core element has a first side substantially coated with a negative Seebeck coefficient conductive material having a plurality of first spaced gaps, and each core element further has a second side substantially coated with a positive Seebeck coefficient conductive material having a plurality of second spaced gaps. The honeycomb core further comprises a plurality of electrical connections for connecting in series the first side to the second side. A temperature gradient across the honeycomb core generates power.

Abstract: A thermoelectric composition comprises a material represented by the general formula (AgaX1?a)1±x(SnbPb1?b)mM?1?yQ2+m wherein X is Na, K, or a combination of Na and K in any proportion; M? is a trivalent element selected from the group consisting of Sb, Bi, lanthanide elements, and combinations thereof; Q is a chalcogenide element selected from the group consisting of S, Te, Se, and combinations thereof; a and b are independently >0 and ?1; x and y are independently >0 and <1; and 2?m?30. The compositions exhibit a figure of merit ZT of up to about 1.4 or higher, and are useful as p-type semiconductors in thermoelectric devices.

Abstract: A thermoelectric module which has at least one thermoelectric element for converting energy between thermal energy and electrical energy. The at least one thermoelectric element has a first surface and a second surface opposite the first surface. The thermoelectric module further has a first electrode, the first electrode having at least a first region which is arranged directly on the first surface and a second electrode, the second electrode having at least a second region which is arranged directly on the second surface. At least one of the first region and the second region has a metal alloy which exhibits an Invar effect.

Abstract: A thermoelectric material including a compound represented by Formula 1 below: (R1-aR?a)(T1-bT?b)3±y??Formula 1 wherein R and R? are different from each other, and each includes at least one element selected from a rare-earth element and a transition metal, T and T? are different from each other, and each includes at least one element selected from sulfur (S), selenium (Se), tellurium (Te), phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), carbon (C), silicon (Si), germanium (Ge), tin (Sn), boron (B), aluminum (Al), gallium (Ga), and indium (In), 0?a?1, 0?b?1, and 0?y<1.

Abstract: The thermoelectric device of the present invention includes a first electrode and a second electrode that are disposed to be opposed to each other, and a laminate that is interposed between the first electrode and the second electrode, is connected electrically to both the first electrode and the second electrode, and is layered in the direction orthogonal to an electromotive-force extracting direction, which is the direction in which the first electrode and the second electrode are opposed to each other.

Abstract: High performance thin film thermoelectric couples and methods of making the same are disclosed. Such couples allow fabrication of at least microwatt to watt-level power supply devices operating at voltages greater than one volt even when activated by only small temperature differences.

Abstract: New thermoelectric materials and devices are disclosed for application to high efficiency thermoelectric power generation. New functional materials based on oxides, rare-earth-oxides, rare-earth-nitrides, rare-earth phosphides, copper-rare-earth oxides, silicon-rare-earth-oxides, germanium-rare-earth-oxides and bismuth rare-earth-oxides are disclosed. Addition of nitrogen and phosphorus are disclosed to optimize the oxide material properties for thermoelectric conversion efficiency. New devices based on bulk and multilayer thermoelectric materials are described. New devices based on bulk and multilayer thermoelectric materials using combinations of at least one of thermoelectric and pyroelectric and ferroelectric materials are described. Thermoelectric devices based on vertical pillar and planar architectures are disclosed. The advantage of the planar thermoelectric effect allows utility for large area applications and is scalable for large scale power generation plants.

Abstract: A thermoelectric conversion module is provided. The thermoelectric conversion module includes a plurality of thermoelectric devices and an electrode for electrically connecting the thermoelectric devices in series, wherein the electrode has a hole section opened to the outside of the electrode and metal which is in liquid state within the used temperature range is stored in the hole section.

Abstract: The invention relates to the use of a thermoelectric material for thermoelectric purposes at a temperature of 150 K or less, said thermoelectric material is a material corresponding to the stoichiometric formula FeSb2, wherein all or part of the Fe atoms optionally being substituted by one or more elements selected from the group comprising: Sc, Ti, V, Cr, Mn, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, La, Hf, Ta, W, Re, Os, Tr, Pt, Au, Hg, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and a vacancy; and wherein all or part of the Sb atoms optionally being substituted by one or more elements selected from the group comprising: P, As, Bi, S, Se, Te, B, Al, Ga, In, Tl, C, Si, Ge, Sn, Pb and a vacancy; with the proviso that neither one of the elements Fe and Sb in the formula FeSb2 is fully substituted with a vacancy, characterised in that said thermoelectric material exhibits a power factor (S2?) of 25 ?W/cmK2 or more at a temperature of 150 K or less.

Abstract: The present invention provides an electrically conductive paste for connecting thermoelectric materials, the paste comprising a specific powdery oxide and at least one powdery electrically conductive metal selected from the group consisting of gold, silver, platinum, and alloys containing at least one of these metals. By connecting a thermoelectric material to an electrically conductive substrate with the electrically conductive paste of the invention, a suitable electroconductivity is imparted to the connecting portion of the thermoelectric element. Further, the thermal expansion coefficient of the connecting portion can be made close to that of the thermoelectric material. Therefore, even when high-temperature power generation is repeated, separation at the connecting portion is prevented and a favorable thermoelectric performance can be maintained.

Abstract: Disclosed herein is a thermoelectric material for intermediate- and low-temperature applications, in which any one or a mixture of two or more selected from among La, Sc and MM is added to a Ag-containing metallic thermoelectric material or semiconductor thermoelectric material. The thermoelectric material has a low thermal diffusivity, a high Seebeck coefficient, a low specific resistivity, a high power factor and a low thermal conductivity, and thus has a high dimensionless figure of merit, thus showing very excellent thermoelectric properties. The thermoelectric material provide thermoelectric sensors having high sensitivity and low noise and, in addition, is widely used as a thermoelectric material for intermediate- and low-temperature applications, because it shows excellent thermoelectric performance in the intermediate- and low-temperature range.

Abstract: A package is adapted to a thermoelectric module in which a plurality of thermoelectric elements is electrically connected in series and aligned between a lower electrode and an upper electrode and is constituted of a metal frame and a metal base which is a metal plate having good thermal conductivity composed of copper, aluminum, silver, or alloy. The metal frame is bonded onto the periphery of the metal base via a low melting point solder whose melting point is lower than that of the solder used for forming the thermoelectric module. The thermoelectric module is circumscribed by the metal frame so that the lower electrode thereof is attached onto the metal base via an insulating resin layer.

Abstract: The present invention provides a thermoelectric element in which a thin film of p-type thermoelectric material and a thin film of n-type thermoelectric material, which are formed on an electrically insulating substrate, are electrically connected, in which the p-type thermoelectric material and the n-type thermoelectric material are selected from specific complex oxides with a positive Seebeck coefficient and specific complex oxides with a negative Seebeck coefficient, respectively. The present invention also provides a thermoelectric module using the thermoelectric element(s) and a thermoelectric conversion method. In the thermoelectric element of the present invention, since a p-type thermoelectric material and an n-type thermoelectric material are formed into a thin film on an electrically insulating substrate, the thermoelectric element of the invention can be formed on substrates having various shapes, thereby providing thermoelectric elements having various shapes.

Abstract: A thermoelectric generator includes an enclosure accommodating therein multiple segments of anode thermoelectric material and multiple segments of cathode thermoelectric material, both having low thermal conductivity. The anode thermoelectric material segments are respectively jointed to the corresponding ones of the cathode thermoelectric material segments to form a plurality of V-shaped electrode pairs each having an apex. The plurality of V-shaped electrode pairs is connected in cascade to form a serially connected sequence with the apexes of the V-shaped electrode pairs of the sequence set in a common given direction. A conductive lead is connected to each of a first one and a last one of the plurality V-shaped electrode pairs of the sequence and extends out of the enclosure. The generator can be directly put in a flame or a high temperature environment and can bear a maximum temperature beyond 1000° C. without additionally mounted heat dissipation device.

Abstract: A thermoelectric material of the general formula Ag1?XMmM?Q2+m, wherein M is selected from the group consisting of Pb, Sn, Ca, Sr, Ba, divalent transition metals, and combinations thereof; M? is selected from the group consisting of Bi, Sb, and combinations thereof; Q is selected from the group consisting of Se, Te, S, and combinations thereof; 8?m?24; and 0.01?x?0.7. In embodiments of the invention, the compositions exhibit n-type semiconductor properties. In preferred embodiments, x is from 0.1 to 0.3, and m is from 10 to 18. The compositions may be synthesized by adding stoichiometric amounts of starting materials comprising Ag, M, M?, and Q to a reaction vessel, heating the starting materials to a temperature and for a period of time sufficient to melt the materials, and cooling the reaction product at a controlled rate of cooling.

Abstract: A thermoelectric generation device is configured for mounting on cooling tubes of a heat exchanger of a computer room air conditioning unit in a data center. A first type of Seebeck material and a second type of Seebeck material are arranged in a matrix and connected in series. An electrically insulating, but thermally conducting plate is located on either side of the device. The device is mounted physically on cooling tubes of the heat exchanger and exposed on the other side to the warm air environment. As a result of the temperature difference a voltage is generated that may be used to power an electrical load connected thereto.

Abstract: New thermoelectric materials comprise highly [111]-oriented twinned group IV alloys on the basal plane of trigonal substrates, which exhibit a high thermoelectric figure of merit and good material performance, and devices made with these materials.

Abstract: The present invention provides a novel complex oxide capable of achieving high performance as a p-type thermoelectric material. The complex oxide comprises a layer-structured oxide represented by the formula BiaPbbM1cCOdM2eOf wherein M1 is one or more elements selected from the group consisting of Na, K, Li, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Pb, Ca, Sr, Ba, Al, Y, and lanthanoids; M2 is one or more elements selected from the group consisting of Ti, V, Cr, Mn, Fe, Ni, Cu, Mo, W, Nb, Ta, and Ag; 1.8?a?2.5; 0?b?0.5; 1.8?c?2.5; 1.6?d?2.5; 0?e?0.5; and 8?f?10; and at least one interlayer component selected from the group consisting of F, Cl, Br, I, HgF2, HgCl2, HgBr2, HgI2, TlF3, TlCl3, TlBr3, TlI3, BiF3, BiCl3, BiBr3, BiI3, PbF2, PbCl2, PbBr2, and PbI2. The interlayer component being present between layers of the layer-structured oxide.

Abstract: To obtain a thermoelectric module substrate of which reliability such as stress relaxation is improved without damaging the performance as a thermoelectric module such as heat conductivity to provide a thermoelectric module excellent in reliability by using such a substrate. Thermoelectric module substrates of the present invention each comprises a synthetic resin layer including fillers having good thermal conductivity; and a copper-metalized layer or layers, or a copper layer at least including copper plate or copper layers which is or are formed on one face or both faces of the synthetic resin layer. Further, in the case where contents volume percentage of fillers within the synthetic resin layer is expressed as A (%), the thickness of the synthetic resin layer is expressed as B (?m) and the total thickness of the copper layer is expressed as C (?m), the thermoelectric module substrate is formed so as to have the relation expressed as (C/4)?B?65, A/B?3.5, A>0, C>50 and B?7.

Abstract: The present invention is related to a temperature differential panel with conductors made of different metals or alloys. With thermoelectric couple effects the panel and device can generate power by temperature difference. The temperature differential panel comprises a sheet-like insulation (3); and a current power generation device (2) consists of a plurality of first conductors (20) and second conductors (21) made of different metals or alloys, the first conductors (20) and second conductors (21) are disposed to a top and a bottom of the sheet-like insulation (3) respectively; each of both ends of the first conductors (20) are connected to each of both ends of the second conductors (21) respectively to form electric charging points (22a, 22b).

Abstract: New thermoelectric materials and devices are disclosed for application to high efficiency thermoelectric power generation. New functional materials based on oxides, rare-earth-oxides, rare-earth-nitrides, rare-earth phosphides, copper-rare-earth oxides, silicon-rare-earth-oxides, germanium-rare-earth-oxides and bismuth rare-earth-oxides are disclosed. Addition of nitrogen and phosphorus are disclosed to optimize the oxide material properties for thermoelectric conversion efficiency. New devices based on bulk and multilayer thermoelectric materials are described. New devices based on bulk and multilayer thermoelectric materials using combinations of at least one of thermoelectric and pyroelectric and ferroelectric materials are described. Thermoelectric devices based on vertical pillar and planar architectures are disclosed. The advantage of the planar thermoelectric effect allows utility for large area applications and is scalable for large scale power generation plants.

Abstract: The present invention provides an electric power generation method using a thermoelectric power generation element, a thermoelectric power generation element, and a thermoelectric power generation device, each of which has high thermoelectric power generation performance and can be used for more applications. The thermoelectric power generation element includes a first electrode and a second electrode that are disposed to oppose each other, and a laminate that is interposed between the first and second electrodes and that is electrically connected to both the first and second electrodes, where the laminate has a structure in which SrB6 layers and metal layers containing Cu, Ag, Au, or Al are laminated alternately, a thickness ratio between the metal layer and the SrB6 layer is in a range of metal layer: SrB6 layer=20:1 to 2.

Abstract: A thermoelectric converter including p-type semiconductors and n-type semiconductors alternately provided in corresponding first and second through holes, respectively, in a ceramic honeycomb. The first and second through holes have different cross-sectional shapes and are alternately arranged. The semiconductors have respective first and second ends thereof successively connected to different ones of the semiconductors on first and second sides, respectively, of the corresponding through holes.

Abstract: A thermoelectric conversion device for securely fixing a junction of a thermocouple to a top plate while ensuring heat transfer between the junction and the top plate. The thermoelectric conversion device includes a substrate having a main surface, a top plate facing the main surface of the substrate, and a plurality of series-connected thermocouples. Each thermocouple has a first end including a first junction and a second end including a second junction. The first junction of each thermocouple is fixed to the main surface of the substrate and the second junction of each thermocouple is provided with a bump for attaching the second junction to the top plate in such a way that the second junction is separated from the substrate.

Abstract: The present invention provides a thermoelectric conversion device having high thermoelectric conversion performance. In this device, electrodes are arranged so that electric current flows in an interlayer direction of a layered substance, unlike the arrangements derived from common knowledge in the art. In the thermoelectric conversion device according to the present invention, a thermoelectric-conversion film is obtained through epitaxial growth and formed by arranging an electrically conducting layer and an electrically insulating layer alternately; the electrically conducting layer has an octahedral crystal structure in which a transition metal atom M is positioned at its center and oxygen atoms are positioned at its vertexes; and the electrically insulating layer includes a metal element or a crystalline metal oxide.

Abstract: A thermoelectric module which includes case 1, heat-radiation side insulating substrate 4a, heat-absorption side insulating substrate 4b, first soldering layer 5a formed of a first soldering agent to connect the heat-radiation side insulating substrate 4a and the case 1, a plurality of P-type and N-type semiconductor chips interposed between the heat-radiation side insulating substrate 4a and the heat-absorption side insulating substrate 4b, the plurality of P-type and N-type semiconductor chips being arranged alternately, and a second soldering layer 15a (15b) formed of a second soldering agent to connect the heat-radiation side insulating substrate 4a and one end of each of the plural P-type and N-type semiconductor chips (the heat-absorption side insulating substrate 4b and the other end of each of the plural P-type and N-type semiconductor chips), the first soldering agent and the second soldering agent being identical in raw material.

Abstract: Disclosed is a thermoelectric module, comprising a plurality of p-type thermoelectric elements each comprising a p-type semiconductor having a skutterdite crystal structure, a plurality of n-type thermoelectric elements each comprising a n-type semiconductor having a skutterdite crystal structure, at least one first electrode, at least one second electrode, at least one first alloy layer and at least one second alloy layer, wherein said at least one first alloy layer and said at least one second alloy layer contain Sb and at least one transition metal element selected from the group consisting of Ag, Au and Cu.

Abstract: A high-efficiency thermoelectric unicouple is used for power generation. The unicouple is formed with a plurality of legs, each leg formed of a plurality of segments. The legs are formed in a way that equalizes certain aspects of the different segments. Different materials are also described.

Abstract: A radiation sensor which includes a thermopile for detecting radiant energy. The thermopile and a support rim for the thermopile are fabricated as an integrated unit to form a support chip. The support chip is mated to a mating chip so that the thermopile is positioned in an inner cavity region of the radiation sensor. The sensor has a window which permits the transmission of radiant energy into the enclosure such that the radiant energy impinges upon a central absorber region of the thermopile.

Abstract: A cuboid p-type and an n-type thermoelectric conversion material having a composite of an alloy powder for a rare earth magnet and a bismuth-based thermoelectric conversion material that has been rendered a p-type semiconductor or an n-type semiconductor by the addition of the required dopant, are arranged alternately with a material with low thermal conductivity and high electrical resistivity interposed between them. The low- and the high-temperature sides of these thermoelectric conversion materials are connected with wires, a magnetic field is applied in the x axis direction, a temperature gradient ∇T is imparted in the z axis direction a p-n junction is created, and thermoelectromotive force is extracted from the connection end in a plane in the y axis direction. There is a marked increase in the Seebeck coefficient even though no magnetic field is applied externally.

Abstract: A thermoelectric module including a couple formed between two bismuth telluride thermoelectrodes. The first thermoelectrode is doped with palladium, selenium, or a combination of the two. The second thermoelectrode is doped with antimony, gold, or a combination of the two. Multiple thermoelectric modules may be used in series and parallel to achieve the desired voltage and current outputs.

Abstract: A class of thermoelectric compounds based on the skutterudite structure with heavy filling atoms in the empty octants and substituting transition metals and main-group atoms. High Seebeck coefficients and low thermal conductivities are achieved in combination with large electrical conductivities in these filled skutterudites for large ZT values. Substituting and filling methods are disclosed to synthesize skutterudite compositions with desired thermoelectric properties. A melting and/or sintering process in combination with powder metallurgy techniques is used to fabricate these new materials.

Abstract: A family of isostructural compounds have been prepared having the general formula AnPbmBinQ2n+m. These compounds possess a NaCl lattice type structure as well as low thermal conductivity and controlled electrical conductivity. Furthermore, the electrical properties can be controlled by varying the values for n and m. These isostructural compounds can be used for semiconductor applications such as detectors, lasers and photovoltaic cells. These compounds also have enhanced thermoelectric properties making them excellent semiconductor materials for fabrication of thermoelectric devices.

Abstract: An improved material for a thermoelectric device and thermoelectric systems incorporating the same.

Abstract: A thermoelectric semiconductor compound is provided whose performance index Z is remarkably improved without sacrificing Seebeck coefficient, electrical conductivity or thermal conductivity. The thermoelectric semiconductor compound includes a first thermoelectric semiconductor which is in the form of matrix and a second thermoelectric semiconductor which is in the form of particles dispersed in the matrix. The first thermoelectric semiconductor and the second thermoelectric semiconductor have a common element. The average diameter D of the dispersed particles complies with a formula of A<D<B, where A is the mean free path of a carrier in a single crystal of the second thermoelectric semiconductor and B is the mean free path of a long wave length phonon in the single crystal of the second thermoelectric semiconductor. A method for making the a thermoelectric semiconductor compound is provided.

Abstract: Ternary tellurium compounds and ternary selenium compounds may be used in fabricating thermoelectric devices with a thermoelectric figure of merit (ZT) of 1.5 or greater. Examples of such compounds include Tl2SnTe5, Tl2GeTe5, K2SnTe5 and Rb2SnTe5. These compounds have similar types of crystal lattice structures which include a first substructure with a (Sn, Ge) Te5 composition and a second substructure with chains of selected cation atoms. The second substructure includes selected cation atoms which interact with selected anion atoms to maintain a desired separation between the chains of the first substructure. The cation atoms which maintain the desired separation between the chains occupy relatively large electropositive sites in the resulting crystal lattice structure which results in a relatively low value for the lattice component of thermal conductivity (&kgr;g).

Abstract: Thermoelectric devices having enhanced thermal characteristics are fabricated using multilayer ceramic (MLC) technology methods. Aluminum nitride faceplates with embedded electrical connections provide the electrical series configuration for alternating dissimilar semiconducting materials. Embedded electrical connections are formed by vias and lines in the faceplate. Methods are employed for forming tunnels through lamination and etching. A portion of the dissimilar materials are then melted within the tunnels to form a bond. Thermal conductivity of the faceplate is enhanced by adding electrically isolated vias to one surface, filled with high thermal conductivity metal paste. A low thermal conductivity material is also introduced between the two high thermal conductivity material faceplates. Alternating semiconducting materials are introduced within the varying thermal conductivity layers by punching vias within greensheets of predetermined thermal conductivity and filling with n-type and p-type paste.

Abstract: A method and apparatus for generating electrical power using animal body heat as the sole energy source. The apparatus includes a plurality of thermocouples connected in series and thermal insulating material for retaining heat in the hot junction and thermal conducting material for conducting heat away from the cold junction whereby a temperature differential between the hot and cold junctions of the thermocouples is maintained body heat energy received by the hot junction is converted to electrical power. The apparatus can be used to replace or supplement the electrical power provided by a low-voltage battery to drive a microelectronic device.

Abstract: An apparatus and method for providing a topographical and thermal image of a semiconductor device. A probe (10) is made from a first ribbon of material (11) and a second ribbon of material (12) which forms a thermocouple junction (13). A probe tip (15) is then attached to the thermocouple junction (13) with an epoxy (14). In an alternate embodiment of the present invention, a probe (20) has a point region (17) which is formed by bending a portion of the thermocouple junction (13) and coating the point region (17) is coated with a thermally conductive material. An optical signal is then reflected off a planar portion of the first ribbon of material (11), the second ribbon of material (12), or the thermocouple junction (13) so the motion of the probe (10,20) can be monitored by an optical detector.

Abstract: A family of isostructural compounds have been prepared having the general formula AnPbmBinO2n+m. These compounds possess a NaCl lattice type structure as well as low thermal conductivity and controlled electrical conductivity. Furthermore, the electrical properties can be controlled by varying the values for n and m. These isostructural compounds can be used for semiconductor applications such as detectors, lasers and photovoltaic cells. These compounds also have enhanced thermoelectric properties making them excellent semiconductor materials for fabrication of thermoelectric devices.