Abstract: A method for preparing an alternating arrangement silver-copper lateral composite ingot, including: using a concave roller set; manufacturing a copper frame having a fixed width according to a negative tolerance of a width of the grooves of the concave roller, and corresponding copper bars and silver bars, and performing a surface treatment on the copper frame, the copper bars, and the silver bars; and then arranging different number of copper bars and silver bars at internals as needed and tightly placing into the copper frame to form a composite blank, i.e., a composite ingot. A method for preparing an alternating arrangement silver-copper lateral composite strip is further provided, and the silver-copper lateral composite ingot prepared by the method for preparing the alternating arrangement silver-copper lateral composite ingot is used to prepare the silver-copper lateral composite strip.

Abstract: A first structural material is bonded to a second structural material with a joining material provided with a mixed layer of a raw-material component for forming an intermetallic compound layer and a resin component that softens and flows during heat treatment interposed therebetween to form bonded structural materials. When the bonded structural materials are heat-treated, the first structural material is joined to the second structural material with an intermetallic compound layer, and the resin component exudes and covers the lateral circumferential (exposed) portion of the intermetallic compound layer with a resin film.

Abstract: The invention relates to a wire, preferably a bonding wire for bonding in microelectronics, containing a copper core with a surface and a coating layer containing aluminum superimposed over the surface of the core. In any cross-sectional view of the wire, the area share of the coating layer is from 20 to 50% based on the total area of the cross-section of the wire, and the aspect ratio between longest and shortest paths through the wire is from larger than 0.8 to 1.0. The wire has a diameter of from 100 ?m to 600 ?m. The invention further relates to a process for making a wire, to a wire obtained by the process, to an electric device containing at least two elements and the wire, to a propelled device containing the electric device, and to a process of connecting two elements through the wire by wedge bonding.

Abstract: Provided are a substrate for a superconducting compound and a method for manufacturing the substrate which can realize the excellent adhesive strength simultaneously with high orientation of copper. An absorbed material on a surface of a copper foil to which rolling is applied at a draft of 90% or more is removed by applying sputter etching to the surface of the copper foil, sputter etching is applied to a nonmagnetic metal sheet, the copper foil and the metal sheet are bonded to each other by applying a pressure to the copper foil and the metal sheet using reduction rolls, crystals of the copper in the copper foil are oriented by heating a laminated body formed by such bonding, copper is diffused into the metal sheet by heating with a copper diffusion distance of 10 nm or more, and a protective layer is laminated to a surface of the copper foil of the laminated body.

Abstract: A pressure resistant and corrosion resistant copper alloy contains 73.0 mass % to 79.5 mass % of Cu and 2.5 mass % to 4.0 mass % of Si with a remainder composed of Zn and inevitable impurities, in which the content of Cu [Cu] mass % and the content of Si [Si] mass % have a relationship of 62.0?[Cu]?3.6×[Si]?67.5. In addition, the area fraction of the ? phase “?”%, the area fraction of a ? phase “?”%, the area fraction of a ? phase “?”%, the area fraction of the ? phase “?”%, and the area fraction of a ? phase “?”% satisfy 30?“?”?84, 15?“?”?68, “?”+“?”?92, 0.2?“?”/“?”?2, “?”?3, “?”?5, “?”+“?”?6, 0?“?”?7, and 0?“?”+“?”+“?”?8. Also disclosed is a method of manufacturing a brazed structure made of the above pressure resistant and corrosion resistant copper alloy.

Abstract: The invention relates to a wire electrode (10) for the spark-erosive cutting of articles, comprising and electrically conductive core (2) and a jacket (5) surrounding the core (2), which jacket comprises at least on ?+?-cover layer (6) that contains ?-brass and/or ??-brass. In order to provide a wire electrode that has improved cutting efficiency, according to the invention, the ?+?-cover layer (6) forms a homogenous phase (7) of ?-brass and/or ??-brass in ?+?-brass grains (8) having an ?+?-phase and/or a ?+??-phase are embedded.

Abstract: A metal nanonetwork includes metal nanostructures that are joined by metallic bond. The joined part between the metal nanostructures includes a fillet part. In the joined part between the metal nanostructures, the distance between the central axis of one metal nanostructure and the central axis of another metal nanostructure is smaller than the sum of the radii of both metal nanostructures. The metal nanostructure is a metal nanowire. A first method for producing the metal nanonetwork includes a process of forming an oxide film on the outermost surface of the metal nanostructure, and a process of reducing the oxide film at the joined parts of a plurality of the metal nanostructures to thereby join the metal nanostructures.

Abstract: A vertical support rigidly mounted to a planar base positions and supports a cryocooler expander unit off axis and away from a sample to be examined. The sample support is likewise rigidly mounted to the planar base with a rigidly mounted sample housing therein. The cryocooler expander unit is suspended in the vertical support by spring dampening bearings. A pair of opposing flexible vacuum bellows connects the cryocooler expander unit to the sample housing and vertical support. This configuration isolates the sample from vibration. Flexible thermal links associated with a predictive electronic closed loop control sequence maintains sample temperature.

Abstract: A copper-based alloy wire made of a material selected from the group consisting of a copper-gold alloy, a copper-palladium alloy and a copper-gold-palladium alloy is provided. The alloy wire has a polycrystalline structure of a face-centered cubic lattice and consists of a plurality of equi-axial grains. The quantity of grains having annealing twins is 10 percent or more of the total quantity of the grains of the copper-based alloy wire.

Abstract: A method is for plating metal or alloy blanks. The method includes heating the metal or alloy blanks at a recrystallization temperature sufficient to soften the steel for minting; plating the softened metal or alloy blanks with one or more layers of metal or alloy; and heating the plated blanks at a temperature sufficient to reduce plating stresses but below the recrystallization temperature of the outermost plating layer.

Abstract: Metal ingots for forming single-crystal shape-memory alloys (SMAs) may be fabricated with high reliability and control by alloying thin layers of material together. In this method, a reactive layer (e.g., aluminum) is provided in thin flat layers between layers of other materials (e.g., copper and layers of nickel). When the stacked layers are vacuum heated in a crucible to the melting temperature of the reactive layer, it becomes reactive and chemically bonds to the other layers, and may form eutectics that, as the temperature is further increased, melt homogeneously and congruently at temperatures below the melting temperatures of copper and nickel. Oxidation and evaporation are greatly reduced compared to other methods of alloying, and loss of material from turbulence is minimized.

Abstract: In an Sn-plated strip in which a copper alloy containing 15 to 40 mass % of Zn in terms of an average concentration is used as an alloy strip and the layers of an Sn phase, an Sn—Cu alloy phase and an Ni phase constitute a plating film from the surface to the alloy strip, the Zn concentration of the surface of the Sn phase is adjusted to a range of 0.1 to 5.0 mass %. The alloy may further contain 0.005 to 3.0 mass % in total of an arbitrary constituent selected from Sn, Ag, Pb, Fe, Ni, Mn, Si, Al and Ti. Moreover, the alloy may be a copper base alloy containing 15 to 40 mass % of Zn, 8 to 20 mass % of Ni, 0 to 0.5 mass % of Mn and a balance of Cu and unavoidable impurities, and may further contain 0.005 to 10 mass % in total of the above arbitrary constituent. There is provided a Cu/Ni double layer base reflowed Sn-plated Cu—Zn alloy strip in which generation of whiskers is suppressed.

Abstract: Methods for welding a first metal part to a second metal part by a solid state process to form a welded article having at least a welded region are provided herein. The welded region of the weld is post-weld aged by heating it to a set temperature for a set time and compressing the weld.

Abstract: A metallic material for a connecting part, having a rectangular wire material of copper or a copper alloy as a base material, and formed at an outermost surface thereof, a copper-tin alloy layer substantially composed of copper and tin, wherein the copper-tin alloy layer of the outermost surface further contains at least one selected from the group consisting of zinc, indium, antimony, gallium, lead, bismuth, cadmium, magnesium, silver, gold, and aluminum, in a total amount of 0.01% or more and 1% or less in terms of mass ratio with respect to the content of the tin.

Abstract: Disclosed is a metal laminated substrate for forming an epitaxial growth film for forming a semiconductor element having high biaxial crystal orientation on a surface of a metal substrate and a method of manufacturing the metal laminated substrate. The manufacturing method includes the steps of activating at least one surface of a metal plate T1 by sputter etching or the like; activating at least one surface of a metal foil T2 made of Cu or a Cu alloy which is cold-rolled at a rolling reduction of 90% or more; laminating the metal plate and the metal foil such that an activated surface of the metal plate and an activated surface of the metal foil face each other in an opposed manner and applying cold rolling to the metal plate and the metal foil which are laminated to each other at a rolling reduction of 10% or less, for example; and biaxially orienting crystals of the metal foil by heat treatment at a temperature of not lower than 150° C. and not higher than 1000° C.

Abstract: A method for manufacturing a oriented substrate for forming an epitaxial thin film thereon, having a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. The clad textured metal substrate includes a metallic layer and a copper layer bonded to at least one face of the above described metallic layer, wherein the above described copper layer has a {100}<001> cube texture in which a deviating angle ?? of crystal axes satisfies ???6 degree. The substrate has an intermediate layer on the surface of the copper layer, to form the epitaxial thin film thereon.

Abstract: A method of fabricating an interconnection between a region of copper material and a conducting region is disclosed. The method includes a step of forming a region of tin material and a step of forming a region of nickel material. The method also includes a step of melting the tin material to induce formation of a nickel/tin/copper intermetallic composition at an interface between the region of copper material and the conducting region. The region of tin material and the region of nickel material define the interface between the region of copper material and the conducting region.

Abstract: A copper alloy for electronic machinery and tools, having a surface layer of a work affected layer whose thickness is 0.2 ?m or below; and a method of producing the same.

Abstract: A method for inhibiting growth of tin whiskers is provided. The method includes providing a metal substrate, forming a tin layer to cover the surface of the metal substrate, and treating the metal substrate covered the tin layer by an annealing process, wherein the annealing process is performed at 400° C.-600° C. and the surface of the tin layer is subsequently inhibited from growing tin whiskers.

Abstract: A plated structure is disclosed that includes a base formed of a copper-based material containing copper as a major component, a plating film formed of a tin-based material containing tin as a major component and provided over the base, and a tin-copper compound barrier film located at the boundary between the base and the plating film. The density of the tin-copper compound barrier film is greater than that of copper.

Abstract: A device fabrication method, according to which a tin-copper-alloy layer is formed adjacent to a copper-plated pad or pin that is used to electrically connect the device to external wiring. Advantageously, the tin-copper-alloy layer inhibits copper dissolution during a solder reflow process because that layer is substantially insoluble in liquid Sn—Ag—Cu (tin-silver-copper) solder alloys under typical solder reflow conditions and therefore shields the copper plating from direct physical contact with the liquefied solder.

Abstract: Hard phase particles including Co alloy particles, carbide alloy particles, and silicide particles are dispersed substantially uniformly throughout a matrix composed of Cu self-fluxing alloy of a cladded portion. The cladded portion contains 6 to 15% by weight of Co, 3 to 8% by weight of one of Cr and Mo, 0.3 to 1% by weight of W, 0.5 to 1.8% by weight of Fe, 8 to 15% by weight of Ni, 0.08 to 0.2% by weight of C, 1.5 to 4% by weight of Si, 0.5 to 0.8% by weight of Al, and 0.1 to 0.3% by weight of P, and inevitable impurities and Cu as a balance. The hard phase particles have an average particle diameter of 8 to 20 ?m and a particle size distribution width of 0.1 to 100 ?m, and to occupy 10 to 20% in an arbitrary cross section of the cladded portion.

Abstract: A sputtering target prepared by the butt joining of metal sheets being made of the same material, wherein an intermetallic compound in a joined portion has an average particle diameter of 60% to 130% of the average particle diameter of the intermetallic compound in a non-joined portion is provided. In the sputtering target, the average particle diameter of an intermetallic compound in a joined portion is approximately the same as that of the intermetallic compound in a non-joined portion.

Abstract: The invention includes a copper-comprising sputtering target. The target is monolithic or bonded and contains at least 99.99% copper by weight and has an average grain size of from 1 micron to 50 microns. The copper-comprising target has a yield strength of greater than or equal to about 15 ksi and a Brinell hardness (HB) of greater than about 40. The invention includes copper alloy monolithic and bonded sputtering targets consisting essentially of less than or equal to about 99.99% copper by weight and a total amount of alloying element(s) of at least 100 ppm and less than 10% by weight. The targets have an average grain size of from less than 1 micron to 50 microns and have a grain size non-uniformity of less than about 15% standard deviation (1-sigma) throughout the target. The invention additionally includes methods of producing bonded and monolithic copper and copper alloy targets.

Abstract: The present teachings and illustrations describe a process for forming a plurality of conductive structures in or on a substrate. In one embodiment, the process comprises forming a plurality of recesses in or on the substrate, wherein the plurality of recesses include recesses having different dimensions. In addition, the process further comprises (i) forming a conductive layer which at least partially fills the plurality of recesses and (ii) treating the conductive layer to improve the conductive properties of the conductive layer. Moreover, the process still further comprises (iii) sequentially repeating acts (i) and (ii) until each of the recesses of the plurality of recesses are filled to a desired dimension and such that the conductive material in the recesses of smaller dimension are more uniformly adhered to the bottom surfaces of the recesses.

Abstract: The invention includes a copper-comprising sputtering target. The target is monolithic or bonded and contains at least 99.99% copper by weight and has an average grain size of from 1 micron to 50 microns. The copper-comprising target has a yield strength of greater than or equal to about 15 ksi and a Brinell hardness (HB) of greater than about 40. The invention includes copper alloy monolithic and bonded sputtering targets consisting essentially of less than or equal to about 99.99% copper by weight and a total amount of alloying element(s) of at least 100 ppm and less than 10% by weight. The targets have an average grain size of from less than 1 micron to 50 microns and have a grain size non-uniformity of less than about 15% standard deviation (1-sigma) throughout the target. The invention additionally includes methods of producing bonded and monolithic copper and copper alloy targets.

Abstract: The invention includes a copper-comprising sputtering target. The target is monolithic or bonded and contains at least 99.99% copper by weight and has an average grain size of from 1 micron to 50 microns. The copper-comprising target has a yield strength of greater than or equal to about 15 ksi and a Brinell hardness (HB) of greater than about 40. The invention includes copper alloy monolithic and bonded sputtering targets consisting essentially of less than or equal to about 99.99% copper by weight and a total amount of alloying element(s) of at least 100 ppm and less than 10% by weight. The targets have an average grain size of from less than 1 micron to 50 microns and have a grain size non-uniformity of less than about 15% standard deviation (1-sigma) throughout the target. The invention additionally includes methods of producing bonded and monolithic copper and copper alloy targets.

Abstract: A hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf, wherein the average crystal grain size is 1-100 ?m, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 35° from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof.

Abstract: The present invention provides an oriented substrate for forming an epitaxial thin film thereon, which has a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. The present invention provides a clad textured metal substrate for forming the epitaxial thin film thereon, which includes a metallic layer and a copper layer bonded to at least one face of the above described metallic layer, wherein the above described copper layer has a {100}<001> cube texture in which a deviating angle ?? of crystal axes satisfies ???6 degree.

Abstract: A process is provided for forming an age hardened wire for use as an electrical conductor, which wire is formed from a copper base alloy consisting of from 1.25 to 3.6 wt % nickel, from 0.25 to 0.45 beryllium, and the balance copper and impurities which do not affect the properties of said alloy, with the nickel and beryllium being present in the copper base alloy in a ratio of nickel to beryllium from 5.0 to 8.0. The process comprises the steps of providing a copper base alloy material consisting of from 1.25 to 3.6 wt % nickel, from 0.25 to 0.45 beryllium, and the balance copper and impurities which do not affect the properties of said alloy, which nickel and beryllium are present in the copper base alloy in a ratio of nickel to beryllium from 5.0 to 8.0, cold working the material in a single step; and age hardening the cold worked material in a single step to form a wire in a cold worked and aged hardened condition having an electrical conductivity of at least about 60% IACS.

Abstract: A copper base alloy, which is resistant or immune to carburization, metal dusting and coking, and resistant to oxidation, the alloy having the following composition (all contents in weight %): Al >0-15 Si 0-6 Mg 0-6 one or more of the group of Rare Earth Metal (REM), yttrium, hafnium, zirconium, lanthanum, cerium) up to 0.3 wt. % each; Cu balance; and normally occurring alloying additions and impurities. Related articles of manufacture and methods are also described.

Abstract: The present teachings and illustrations describe a process for forming a plurality of conductive structures in or on a substrate. In one embodiment, the process comprises forming a plurality of recesses in or on the substrate, wherein the plurality of recesses include recesses having different dimensions. In addition, the process further comprises (i) forming a conductive layer which at least partially fills the plurality of recesses and (ii) treating the conductive layer to improve the conductive properties of the conductive layer. Moreover, the process still further comprises (iii) sequentially repeating acts (i) and (ii) until each of the recesses of the plurality of recesses are filled to a desired dimension and such that the conductive material in the recesses of smaller dimension are more uniformly adhered to the bottom surfaces of the recesses.

Abstract: A method is proposed for preparing a structured metallic surface of a body or for the structuring close to the surface or the generation of metallic structures, first of all on a first metal layer or on a first intermetallic layer a second metal layer or a second intermetallic layer, the second layers differing from the first layers, being generated; and thereafter at least the second metal layer or the second intermetallic layer being heated up region by region in such a way that, in that location, there is formed an intermetallic compound using the material of the first intermetallic layer or the first metal layer and the material of the second metal layer or the second intermetallic layer, into which surface regions are embedded, which are at least essentially made of the material of the second metal layer or the second intermetallic layer.

Abstract: A copper base alloy, which is resistant or immune to carburization, metal dusting and coking, and resistant to oxidation, the alloy having the following composition (all contents in weight %): Al >0–15 Si 0–6 Mg 0–6 one or more of the group of Rare Earth Metal (REM), yttrium, hafnium, zirconium, lanthanum, cerium) up to 0.3 wt. % each; Cu balance; and normally occurring alloying additions and impurities. Related articles of manufacture and methods are also described.

Abstract: A method for filling recessed microstructures at a surface of a microelectronic workpiece, such as a semiconductor wafer, with metallization is set forth. In accordance with the method, a metal layer is deposited into the microstructures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed microstructures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties. Various novel apparatus for executing unique annealing processes are also set forth.

Abstract: The present invention is directed to a metal block suitable for machining, the metal block comprising at least two superimposed metal plates, each having a thickness of at least 12.5 mm, wherein the yield strength of the block is at least 75% of the yield strength of the initial metal plate(s). The present invention is further directed to methods for manufacturing such blocks from two or more thick metal plates by explosive welding and other methods. Blocks according to the present invention are useful, for example, for manufacturing aircraft structural components or injection molds for plastics or rubber.

Abstract: A method for inhibiting metal dusting corrosion of surfaces exposed to supersaturated carbon environments comprising constructing said surfaces of, or coating said surfaces with a copper based alloy. The invention is also directed to a composition resistant to metal dusting.

Abstract: The present invention is directed to a method and apparatus for simultaneously cleaning and annealing a plated semiconductor workpiece. A chamber for simultaneously cleaning and annealing a semiconductor workpiece is provided herein. The method according to the present invention includes the steps rinsing the workpiece with mineral acids and DI water, then simultaneously cleaning/annealing the workpiece with heated deoxygenated DI water. By this present method, tool cross contamination by way of plated metal is greatly reduced, and also grain recovery and grain growth at room temperature is greatly accelerated. Thus, the annealing time of grain growth is dramatically reduced using the present method and apparatus.

Abstract: A passive electrical article comprising (a) a first self-supporting substrate having two opposing major surfaces, (b) a second self-supporting substrate having two opposing major surfaces, and (c) an electrically insulating or electrically conducting layer comprising a polymer and having a thickness ranging from about 0.5 to about 10 &mgr;m between the first and second substrate, wherein a major surface of the first substrate in contact with the layer and a major surface of the second substrate in contact with the layer have an average surface roughness ranging from about 10 to about 300 nm and wherein a force required to separate the first and second substrates of the passive electrical article at a 90 degree peel angle is greater than about 3 pounds/inch (about 0.

Abstract: In a method for reducing copper solubility at the inner surface of a copper tube, the process parameters surface treatment (degreasing and pickling), flow conditions (flow speed<1 m/s), temperature (50° C. to 80° C.) and time (1 min to 10 min) are purposefully adjusted to one another, so as to achieve a uniformly directed crystal growth during the course of the tin coating. In particular, the planes (101) of the copper crystals and the tin crystals are aligned parallel to one another and the directions [101] are aligned perpendicular to one another.

Abstract: Embodiments of the described method include (a) forming a core comprising a lead alloy, (b) applying copper or a copper alloy to at least a portion of an exterior surface of the core to form a jacketed bullet, (c) heating the jacketed bullet at a pre-selected temperature for a period of time sufficient to simultaneously harden the core and stress-relieve the copper jacket, and, optionally, (d) reworking a selected portion of the heat-treated bullet by mechanical reforming or annealing to lower the hardness of the reworked portion.

Abstract: A membrane 30 and a method 12 for making the membrane 30comprising the steps of selectively placing a first material 14 upon a substrate 16, depositing a certain material 26 upon a first material 14, and heating the materials 14, 16, 26, thereby forming a membrane 30.

Abstract: A method for making a joint between copper or copper alloys and austenitic steel alloys, in which method in between the junction surfaces of the objects to be joined together, there is arranged at least one intermediate layer, so that the junction surfaces, including their intermediate layers, are pressed together, and at least the junction area is heated in order to create a diffusion joint. In the method, there is brought a first intermediate layer (3) on the junction surface of the steel object (2) or against said surface, in order to activate the creation of the diffusion joint.

Abstract: A method is disclosed for laser lap welding a pair of metal members together. At least one of the pair of metals having a protective metal layer. Each of the metal members having a melt temperature greater than the melt temperature of the protective metal layer. The method includes placing one end of the pair of metal members in an overlapping relation to an other end of the pair of metal members to form an overlapping section. The method also includes inserting a metal alloying agent between the pair of metal members of the overlapping section to form a gap therebetween. A laser welder is used to join the pair of metal members and the alloy agent together so that the protective metal layer and the alloying agent are melted to form an alloy layer between the pair of metal members.

Abstract: A copper alloy sliding material which can bring about superior resistance to fatigue as well as good anti-seizure property without containing any Pb. The copper alloy sliding material is made to have the structure in which both of the hard copper alloy phase and the soft copper alloy phase coexist in a mixture state. On the surface of the sliding material, the soft copper alloy phase comes to have a shape more concave than that of the hard copper alloy phase when receiving a load or when being in a sliding wear relation, in which concave portions is retained lubricant with the result that the anti-seizure property is enhanced. Further, since the soft phase and the hard phase are made of the same copper alloy, the wettability thereof becomes good, and Ni and etc. contained in the hard copper alloy phase are diffused into the soft copper alloy phase, so that the hardness of the boundary portion defined between the phases come to be gradually varied.

Abstract: A method for producing a laminated metal ribbon comprises the steps of (a) vapor-depositing a third metal layer on at least one welding surface of a first metal ribbon 4 and a second metal ribbon 5 in a vacuum chamber 1, the third metal being the same as or different from a metal or an alloy of the first and second metal ribbons 4, 5; (b) pressure-welding the first metal ribbon 4 to the second metal ribbon 5; and (c) subjecting the resultant laminate 9 to a heat treatment for thermal diffusion.

Abstract: Described is a method for producing a diffusion bonded sputtering target assembly which is thermally treated to precipitation harden the backing plate without compromising the diffusion bond integrity. The method includes heat treating and quenching to alloy solution and artificially age the backing plate material after diffusion bonding to a target. Thermal treatment of the diffusion bonded sputtering target assembly includes quenching by partial-immersion in a quenchant and is performed after diffusion bonding and allows for various tempers in the backing plate.

Abstract: One embodiment of the present process, which is particularly useful for forming bullets from two dissimilar metals and/or alloys that have been bonded together, comprises heat-treating such bullets to simultaneously harden the core and soften the jacket. The process comprises: (a) forming a core comprising a lead alloy; (b) applying a copper or a copper alloy to at least a portion of an exterior surface of the core to form a jacketed bullet; (c) heating the jacketed bullet at a pre-selected temperature for a period of time sufficient to simultaneously harden the core and stress-relieve and perhaps anneal the copper jacket. The process also can include quenching the bullet after heating, such as by immersing it in a suitable quenching fluid. The process also can include aging the bullet after quenching, where aging is continued for a period sufficient to further harden the bullet, such as for about 25 minutes or more.

Abstract: To provide a contact material suitable for a commutator of a micromotor which can improve wear resistance and prolong the life of the micromotor by improving an Au-based clad composite material provided at an outermost layer with Au or an Au alloy. The present invention provides the Au-based clad composite material including a surface of a contact substrate having an Ag—Cu—Si alloy layer cladded with Au or the Au alloy, wherein an intermetallic compound Cu—Si is dispersed and deposited in Au or the Au alloy.

Abstract: Wear resistant copper or a wear resistant copper base alloy having formed on the outermost surface thereof an oxide layer having a thickness of 10-1000 nm and a layer of an intermetallic compound primarily comprising Cu—Sn having a thickness of 0.1-10 &mgr;m under the oxide film layer is provided; a method of preparing the above-described wear resistant copper or copper base alloy by coating base material copper or a copper base alloy with Sn, preferably performing reflow treatment and then conducting heat treatment is provided; and an electrical part comprising the above-described wear resistant copper or copper base alloy is provided. A terminal made of the alloy according to the present invention which has an appropriate oxide film layer by performing heat treatment can greatly decrease a terminal-insertion force compared with that made of an ordinary copper base alloy which is not subjected to the heat treatment.