Abstract: A superconducting magnet for eddy-current braking for a high-speed train. The superconducting magnet is fixed at a bottom of a bogie of the high-speed train through a connecting mechanism, and an air gap is formed between the superconducting magnet and a top of a guide rail below the bogie. The superconducting magnet after being excited generates an eddy-current effect with the guide rail of the high-speed train, so as to generate a braking force opposite to a traveling direction of the train, thereby braking the high-speed train. A liquid-level meter is provided on the superconducting magnet to detect a position of a cooling agent liquid level in real time. The superconducting magnet withstands vibration impact through elastic tie rod assemblies when the high-speed train is under operation, showing good adaptability.

Abstract: A method performed by one or more processing devices includes conducting a plurality of tests of a manufacturing process. Each test is conducted at a different combination of at least a first process variable and a second process variable, and each test comprises locally heating a region of a structure, where the local heating results in formation of a thermal field in the structure, and assessing a temperature derivative of the thermal field. Based on results of the plurality of tests, a process map of the temperature derivative of the thermal field is generated, with the temperature derivative based on a function of the first process variable and the second process variable.

Abstract: Conducting a plurality of tests of a manufacturing process, with each test conducted at a different combination of a first process variable and a second process variable. Each test includes locally heating a region of a part, wherein the local heating results in the formation of a thermal field in the part, and assessing a dimension of the thermal field. In some cases, based on the results of the plurality of tests, a process map of the dimension of the thermal field is generated as a function of the first process variable and the second process variable.

Abstract: A power schedule calculation method utilizes an idealized geometry to predict laser power levels on an additive path during laser deposition. The method calculates beam power for any point along the path traveled to form a build having a geometry. Each point along the path has associated with it an idealized geometry comprising a melt pool, hot zone and bulk portion. The method comprises creating a geometric description representing the geometry of the build during the process, creating a path description representing the path of the beam source through space during the process, calculating the idealized geometry for the point on the path based upon the geometric description and path description, calculating an energy balance at the melt pool for the point on the path, calculating total energy needed at the point on the path and calculating optimum beam source power. In the calculations, build temperature is based upon a calculation of hot zone temperature derived from the idealized geometry.

Abstract: The present invention provides a laser processing method comprising the steps of attaching a protective tape 25 to a front face 3 of a wafer 1a, irradiating a substrate 15 with laser light L while employing a rear face of the wafer 1a as a laser light entrance surface and locating a light-converging point P within the substrate 15 so as to form a molten processed region 13 due to multiphoton absorption, causing the molten processed region 13 to form a cutting start region 8 inside by a predetermined distance from the laser light entrance surface along a line 5 along which the object is intended to be cut in the wafer 1a, attaching an expandable tape 23 to the rear face 21 of the wafer 1a, and expanding the expandable tape 23 so as to separate a plurality of chip parts 24 produced upon cutting the wafer 1a from the cutting start region 8 acting as a start point from each other.

Abstract: A method of fabricating a case for a portable electronic device includes: preparing a case preform; processing the inner surface of the case preform using a laser; and surface-treating the outer surface of the case preform, wherein the outer surface of the case preform shows fine prominences and depressions formed by the surface-treating of the outer surface of the case preform, and patterns formed by processing the inner surface of the case preform appear bumpily on the outer surface of the case preform.

Abstract: A method for producing a tungsten trioxide powder for a photocatalyst according to the present invention is characterized by comprising a sublimation step for obtaining a tungsten trioxide powder by subliming a tungsten metal powder or a tungsten compound powder by using inductively coupled plasma process in an oxygen atmosphere, and a heat treatment step for heat-treating the tungsten trioxide powder obtained in the sublimation step at 300° C. to 1000° C. for 10 minutes to 2 hours in an oxidizing atmosphere. A tungsten trioxide powder which is obtained by the method for producing a tungsten trioxide powder for a photocatalyst according to the present invention has excellent photocatalytic performance under visible light.

Abstract: A method for simulation of laser free form fabrication of parts and laser cladding with metal powder or wire includes absorption of laser beam at the surface exposed to metal powder particle jet, enthalpy influx into the part surface due to powder injection, 3D transient conductive heat transfer in the part, material loss due to evaporation, 3D melt pool surface shape determined by surface tension and gravity, 3D shape of the melt pool bottom, interaction of laser beam with the metal powder jet (heating of powder particles and attenuation of laser beam in powder cloud), and shape of part build up due to addition of metal material.

Abstract: Thermal neutron irradiation of superconducting body compositions into which Li or B has been incorporated as a unit cell external or internal dopant introduces by the nuclear reaction of the dopant pinning centers which substantially improve the critical current density of the body.

Abstract: A method for ion implantation of relatively high concentrations of alloying elements into a metal target without sputtering the target, in which the target is precoated with a layer of preselected thickness of a light, low sputtering yield element such as carbon, which is ablated during the ion implantation process.

Abstract: A new method of preparing an exceedingly flat substrate for forming semiconductor devices having an SOI structure is disclosed.In this process at least a first wafer made of silicon single crystal is concavely warped beforehand. A second silicon single crystal wafer is bonded to the concavely warped side of the first wafer with an oxide film interposed between the first and the second wafers. Subsequently the wafers are subjected to polishing and/or etching so that the second wafer bonded is thinned into a thin film to prepare a substrate for forming semiconductor devices having a SOI structure.At this time the polishing and/or etching cause the bonded wafers to be warped convexly to offset the concavity of the first wafer, resulting in realization of a precisely flat substrate for forming semiconductor devices having an SOI structure.