Melt Patents (Class 148/DIG107)
  • Patent number: 5328853
    Abstract: Photoconductive semiconductor material is injected into narrow and closely paced cylindrical channels in an insulating matrix plate to form pixel elements of a high resolution photodetector array. A transparent conductive layer is deposited on one surface of the photoconductor array while light reflecting pads are formed on the elements at the opposite surface. Subsequently, a layer of light modulating material and a transparent conductive layer are deposited on the opposite surface to obtain a high resolution spatial light modulator.
    Type: Grant
    Filed: June 18, 1993
    Date of Patent: July 12, 1994
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Carmen I. Huber, Tito E. Huber, Tak-Kin Chu, Nicholas Caviris
  • Patent number: 5183529
    Abstract: Method of fabricating free-standing diamond films by depositing and adhering polycrystalline diamond by hot filament chemical vapor deposition (1-100 Torr, filament temperature equal to or greater than 1900.degree. C., substrate temperature of 650.degree.-950.degree. C.) onto a substrate meltable at a temperature slightly in excess of the deposition temperature; and (b) prior to cooling said polycrystalline diamond particles, increasing (50.degree.-300.degree. C.) the substrate temperature to melt at least a portion thereof while permitting such melt to emigrate from the diamond films.
    Type: Grant
    Filed: October 29, 1990
    Date of Patent: February 2, 1993
    Assignee: Ford Motor Company
    Inventors: Timothy J. Potter, Michael A. Tamor, Ching-Hsong Wu
  • Patent number: 5053355
    Abstract: A method and means for producing a layered semiconductor system are proposed wherein the required semiconductor layers are deposited on a carrier layer (10) through interaction with a melt (42). The carrier layer (10) itself may have a basic layer consisting of glass or quartz, which in turn may be formed from a melt by solidification on a metal melt.
    Type: Grant
    Filed: January 9, 1990
    Date of Patent: October 1, 1991
    Assignee: Nukem GmbH
    Inventor: Hilmar von Campe
  • Patent number: 4810325
    Abstract: Epitaxial layers are grown from a body of molten material which includes flux and layer constituent components; included in the flux are lead oxide and a small amount of boron trioxide. As compared with prior-art processing in the absence of boron trioxide, enhanced yield is realized as believed to be due to reduced adhesion of solidifying material entrained upon withdrawal of a substrate after growth. The method is particularly useful in the manufacture of magnetic domain devices designed to operate at extreme temperatures, as well as in the manufacture of magneto-optic devices such as, e.g., switches, modulators, and isolators.
    Type: Grant
    Filed: June 15, 1987
    Date of Patent: March 7, 1989
    Assignee: American Telephone and Telegraph Company, AT&T Bell Labs
    Inventor: Steven J. Licht