Proton Bombardment Of Silicon Patents (Class 148/DIG128)
  • Patent number: 6001664
    Abstract: A monolthically integrated VCSEL and photodetector, and a method of manufacturing same, are disclosed for applications where the VCSEL and photodetector require separate operation such as duplex serial data communications applications. A first embodiment integrates a VCSEL with an MSM photodetector on a semi-insulating substrate. A second embodiment builds the layers of a p-i-n photodiode on top of layers forming a VCSEL using a standard VCSEL process. The p-i-n layers are etched away in areas where VCSELs are to be formed and left where the photodetectors are to be formed. The VCSELs underlying the photodetectors are inoperable, and serve to recirculate photons back into the photodetector not initially absorbed. The transmit and receive pairs are packaged in a single package for interface to multifiber ferrules. The distance between the devices is precisely defined photolithographically, thereby making alignment easier.
    Type: Grant
    Filed: February 21, 1997
    Date of Patent: December 14, 1999
    Assignee: Cielo Communications, Inc.
    Inventors: Stanley E. Swirhun, Jeffrey W. Scott
  • Patent number: 5510272
    Abstract: In a method of producing a solar cell, a photovoltaic thin semiconductor crystalline film is formed on an underlying substrate and hydrogen passivated throughout the film thickness direction of the photovoltaic film whereby a high efficiency solar cell is obtained. In addition, since the passivation process is performed before forming a rear surface electrode on the thin semiconductor crystalline film, the passivation process is not limited by the rear surface electrode. Thereby, a solar cell having a higher energy conversion efficiency is obtained. The passivation process is performed by exposing the thin semiconductor crystalline film to a hydrogen ion ambient having a low acceleration energy, below 2 KeV, or to a plasma ambient. Therefore, the uniformity of the passivation process at a wafer surface is improved and a large area wafer can be efficient processed.
    Type: Grant
    Filed: December 1, 1994
    Date of Patent: April 23, 1996
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Hiroaki Morikawa, Hisao Kumabe
  • Patent number: 5358877
    Abstract: A method for electrically isolating an integrated circuit element in an acoustic charge transport device comprises the steps of providing a semi-insulating substrate; providing an epitaxial layer with a thickness and carrier concentration appropriate for an ACT device; providing a circuit element semiconductor layer in the epitaxial layer for construction of an integrated circuit element, the layer having a thickness substantially less than the thickness of the epitaxial layer and having a carrier concentration substantially greater than the ACT epitaxial layer; laterally isolating the semiconductor layer from other regions of the ACT epitaxial layer; and bombarding the semiconductor layer with protons at a dose sufficient to provide significant vertical electrical isolation from underlying regions of the epitaxial layer semi-insulating with minimal detrimental effect on the electrical characteristics of the semiconductor layer.
    Type: Grant
    Filed: March 29, 1991
    Date of Patent: October 25, 1994
    Assignee: Electronic Decisions Inc.
    Inventors: Michael J. Hoskins, Martin J. Brophy
  • Patent number: 5304509
    Abstract: A two-step back-side hydrogenation process includes the steps of first bombarding the back side of the silicon substrate with hydrogen ions with intensities and for a time sufficient to implant enough hydrogen atoms into the silicon substrate to potentially passivate substantially all of the defects and impurities in the silicon substrate, and then illuminating the silicon substrate with electromagnetic radiation to activate the implanted hydrogen, so that it can passivate the defects and impurities in the substrate. The illumination step also annihilates the hydrogen-induced defects. The illumination step is carried out according to a two-stage illumination schedule, the first or low-power stage of which subjects the substrate to electromagnetic radiation that has sufficient intensity to activate the implanted hydrogen, yet not drive the hydrogen from the substrate.
    Type: Grant
    Filed: August 24, 1992
    Date of Patent: April 19, 1994
    Assignee: Midwest Research Institute
    Inventor: Bhushan L. Sopori
  • Patent number: 5286340
    Abstract: A process for spatially controlling the etching of a silicon substrate by omic hydrogen. The process may be generally carried out at room temperature. The process involves implanting a boron dopant in selective portions of the silicon substrate followed by etching with atomic hydrogen. The implanted portions exhibit no etching by atomic hydrogen. A silicon device that is produced by this process is disclosed.
    Type: Grant
    Filed: September 13, 1991
    Date of Patent: February 15, 1994
    Assignee: University of Pittsburgh of the Commonwealth System of Higher Education
    Inventors: John T. Yates, Jr., Peijun J. Chen, M. Luigi Colaianni
  • Patent number: 5284780
    Abstract: For increasing the electric strength of a semiconductor component that comprises a sequence of semiconductor layers of alternating conductivity type and which is adapted to be charged with a voltage that biases at least one of the p-n junctions that separate the layers from one another in the non-conducting direction, the carrier life is reduced only in the lateral region of the edge termination of this p-n junction. The carrier life is reduced by irradiation with electrons or protons or by introducing atoms having recombination properties.
    Type: Grant
    Filed: November 12, 1992
    Date of Patent: February 8, 1994
    Assignee: Siemens Aktiengesellschaft
    Inventors: Hans-Joachim Schulze, Heinz Mitlehner
  • Patent number: 5250446
    Abstract: A mixture of at least two types of charged particles of ions having the same value obtained by dividing the electric charge of an ion by the mass of the ion, i.e., a mixture of charged particles including hydrogen molecular ions H.sub.2.sup.+ and deuterium ions D.sup.+, is accelerated in a charged particle accelerator. Since the mass spectrograph unit in the accelerator cannot divide the hydrogen molecular ions H.sub.2.sup.+ and the deuterium ion D.sup.+, both ions are accelerated together. When the hydrogen molecular ion H.sub.2.sup.+ collides against a silicon substrate, it is divided into two hydrogen ions 2H.sup.+. Since the hydrogen ion H.sup.+ and the deuterium ion D.sup.+ have different ranges in silicon, two regions including a great number of crystal defects are formed in the silicon substrate in one ion irradiating step. As a result, at least three regions of different lifetimes of carriers are formed at different depths of the semiconductor substrate.
    Type: Grant
    Filed: October 9, 1992
    Date of Patent: October 5, 1993
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Akihiko Osawa, Yoshiro Baba, Mitsuhiko Kitagawa, Tetsujiro Tsunoda
  • Patent number: 5250444
    Abstract: A method for rapid plasma hydrogenation of semiconductor devices is provided in which the hydrogenation is conducted in two steps, the first step being conducted at a hydrogenation temperature that is higher than the out-diffusion temperature at which a substantial amount of hydrogen diffuses out of said semiconductor device; and in the second step, the semiconductor device is cooled to a temperature at which out-diffusion is substantially avoided while the hydrogenation plasma is maintained.
    Type: Grant
    Filed: February 21, 1992
    Date of Patent: October 5, 1993
    Assignee: North American Philips Corporation
    Inventors: Babar Khan, Barbara A. Rossi, Uday Mitra
  • Patent number: 5242863
    Abstract: A silicon diaphragm piezoresistive pressure sensor having a diaphragm formed by a single-sided fabrication method. The pressure sensor is made up of a substrate on which there is a diaphragm at or near the surface of the substrate with a chamber under the diaphragm. The pressure sensor is fabricated by undercutting a silicon substrate to form a diaphragm and a cavity within the bulk of the substrate under the diaphragm. The fabricating steps including a) forming a buried low resistive layer under a predetermined diaphragm region; b) converting the low resistance layer into porous silicon by anodization of silicon in a concentrated hydrofluoric acid solution; c) removing the porous silicon by selective etching; d) filling the openings formed in the etching of porous silicon with a deposited material to form a sealed reference chamber. Adding appropriate means to the exterior of the diaphragm and substrate to detect changes in pressure between the reference chamber and the surface of the substrate.
    Type: Grant
    Filed: June 7, 1991
    Date of Patent: September 7, 1993
    Inventors: Tu Xiang-Zheng, Li Yun-Yan
  • Patent number: 5169791
    Abstract: A method for the passivation of crystal defects in polycrystalline or amorphous silicon material using a temperature treatment step in a hydrogen-containing atmosphere the method results in favorable diode properties and favorable passivation properties in amorphous or, respectively, polycrystalline silicon material in a simple manner. Hydrogen-oxygen compounds are reduced at the surface of the silicon material, creating atomic hydrogen that diffuses into the silicon material.
    Type: Grant
    Filed: September 20, 1990
    Date of Patent: December 8, 1992
    Assignee: Siemens Aktiengesellschaft
    Inventor: Adolf Muenzer
  • Patent number: 4610731
    Abstract: A process is described for fabricating semiconductor devices in which atomic hydrogen is used to neutralize shallow donors in III-V semiconductor compounds so as to make certain areas exhibit high resistance. Also described is reverse neutralization in which heat is used to convert neutralized regions to regions with n-type conductivity.
    Type: Grant
    Filed: April 3, 1985
    Date of Patent: September 9, 1986
    Assignee: AT&T Bell Laboratories
    Inventors: Jacques P. Chevallier, William C. Dautremont-Smith, Charles W. Tu
  • Patent number: 4605447
    Abstract: A plasma and heating treatment is carried out to reduce the density of charge carrier traps adjacent the interface of an insulating layer of a thermally grown silicon dioxide and a semiconductor body. During this plasma and heating treatment, the device is covered with an additional layer of silicon containing hydrogen, such as silane, for example, and this additional layer protects the insulating layer from direct bombardment of the plasma. During and/or after the plasma treatment, heating of the structure is at about 400.degree. C. or less. After the plasma and heating treatment, the additional layer is removed from at least most parts of the semiconductor device structure.
    Type: Grant
    Filed: April 26, 1984
    Date of Patent: August 12, 1986
    Assignee: U.S. Philips Corporation
    Inventors: Stanley D. Brotherton, Audrey Gill, Michael J. King
  • Patent number: 4583282
    Abstract: A process is described for producing isolated semiconductor devices in a common substrate which have self-aligned and pre-located isolation walls, buried layers, and channel-stops. The isolation walls are formed from a stacked arrangement of a dielectric region and a polycrystalline semiconductor region, above a doped channel-stop region which acts as a field guard. A single mask layer determines the location and spacing of the buried portions of the isolation walls, the channel-stops, and the buried layers.
    Type: Grant
    Filed: September 14, 1984
    Date of Patent: April 22, 1986
    Assignee: Motorola, Inc.
    Inventors: Terry S. Hulseweh, Carroll Casteel
  • Patent number: 4584028
    Abstract: A p-type impurity in a silicon semiconductor structure is at least partially neutralized by exposure to atomic hydrogen. The subject method provides an excellent means of modifying the profile of the impurity. Suitable impurities include boron, aluminum, gallium and indium.
    Type: Grant
    Filed: September 24, 1984
    Date of Patent: April 22, 1986
    Assignee: RCA Corporation
    Inventors: Jacques I. Pankove, David E. Carlson