Abstract: A silicate layer, which is especially used as an intermediate oxide insulation layer in an integrated circuit for levelling topographic irregularities, is produced by the following method steps: photo-induced polymerization of polysiloxane by means of vapor-phase reaction taking as a basis an SiO-containing or an SiC-containing organic compound together with an O.sub.2 -containing and/or an N.sub.
June 22, 1992
Date of Patent:
November 16, 1993
Fraunhofer-Gesellschaft zur Forderung der angewandten Forschung e.V.