Deposition Thru Hole In Mask Patents (Class 148/DIG26)
  • Trench isolated transistors in semiconductor films
    Patent number: 4507158
    Abstract: A method for trench isolation of a silicon island for device fabrication using only conventional very large scale integration (VLSI) techniques is provided. The combination of the sidewall isolation achieved with the trench isolation and the underlying oxide film create a totally dielectrically isolated structure without the possibility of latch-up between adjacent devices.
    Type: Grant
    Filed: August 12, 1983
    Date of Patent: March 26, 1985
    Assignee: Hewlett-Packard Co.
    Inventors: Theodore I. Kamins, Donald R. Bradbury, Clifford I. Drowley