Dichlorosilane Patents (Class 148/DIG27)
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Patent number: 5643633Abstract: A tungsten silicide film is deposited from WF.sub.6 and SiCl.sub.2 H.sub.2 onto a substrate so that the tungsten to silicon ratio is substantially uniform through the thickness of the WSi.sub.x film, and the WSi.sub.x film is substantially free of fluorine. The film can be deposited by a multi-stage process where the pressure in the chamber is varied, or by a high temperature, high pressure deposition process in a plasma cleaned deposition chamber. Preferably the SiCl.sub.2 H.sub.2 and the WF.sub.6 are mixed upstream of the deposition chamber. A seeding gas can be added to the process gases.Type: GrantFiled: June 7, 1995Date of Patent: July 1, 1997Assignee: Applied Materials, Inc.Inventors: Susan G. Telford, Meng Chu Tseng, Michio Aruga, Moshe Eizenberg
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Patent number: 5558910Abstract: A tungsten silicide film is deposited from WF.sub.6 and SiCl.sub.2 H.sub.2 onto a substrate so that the tungsten to silicon ratio is substantially uniform through the thickness of the WSi.sub.x film, and the WSi.sub.x film is substantially free of fluorine. The film can be deposited by a multi-stage process where the pressure in the chamber is varied, or by a high temperature, high pressure deposition process in a plasma cleaned deposition chamber. Preferably the SiCl.sub.2 H.sub.2 and the WF.sub.6 are mixed upstream of the deposition chamber. A seeding gas can be added to the process gases.Type: GrantFiled: June 7, 1995Date of Patent: September 24, 1996Assignee: Applied Materials, Inc.Inventors: Susan G. Telford, Meng C. Tseng, Michio Aruga, Moshe Eizenberg
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Patent number: 5231056Abstract: A semiconductor manufacturing process for depositing a tungsten silicide film on a substrate includes deposition of a tungsten silicide nucleation layer on the substrate using a (CVD) process with a silane source gas followed by deposition of the tungsten silicide film with a dichlorosilane source gas. This two step process allows dichlorosilane to be used as a silicon source gas for depositing a tungsten silicide film at a lower temperature than would otherwise by possible and without plasma enhancement. Tungsten silicide films deposited by this process are characterized by low impurities, good step coverage, and low stress with the silicon substrate.Type: GrantFiled: January 15, 1992Date of Patent: July 27, 1993Assignee: Micron Technology, Inc.Inventor: Gurtej S. Sandhu
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Patent number: 5168089Abstract: A process for growing selective epitaxial layers on a silicon substrate. In a epitaxial growth reactor, hydrogen and the reactive gasses, the silicon source gas and hydrochloric acid, are introduced. The amount of silicon to free hydrochloric acid is controlled to be about 1:6 during the growth process and then turned off, the hydrogen remaining on. The resulting epitaxial layer may be grown over one micron in thickness with less than 0.1 micron of faceting. Further, a etchant of H.sub.2 O and HF diluted in NHO.sub.3 is first used to remove surface damage on the silicon substrate prior to epitaxial layer growth.Type: GrantFiled: May 13, 1991Date of Patent: December 1, 1992Assignee: AT&T Bell LaboratoriesInventors: Anatoly Feyenson, John W. Osenbach, Donald G. Schimmel
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Patent number: 5110757Abstract: A reduced-temperature two-step silicon deposition performed at different silicon sources is used in forming a composite monosilicon/polysilicon layer (20/24/26) on a body that contains a monosilicon region (10) and an adjoining dielectric regin (12). The first step entails selectively depositing silicon, preferably using dichlorosilane as a CVD silicon source, to grow a first monosilicon layer (20) on exposed monosilicon at an average body temperature less than or equal to 950.degree. C. Substantially no silicon accumulates on exposed dielectric material during the first step. The second step entails non-selectively depositing silicon, preferably using silane as a CVD silicon source, at an average body temperature less than or equal to 950.degree. C. to grow a second monosilicon layer (24) on the first monosilicon layer and to simultaneously grow a polysilicon layer (26) on the exposed dielectric material.Type: GrantFiled: December 19, 1990Date of Patent: May 5, 1992Assignee: North American Philips Corp.Inventors: Margareth C. Arst, Teh-Yi J. Chen, Kenneth N. Ritz, Shailesh S. Redkar
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Patent number: 5061644Abstract: A method of forming a self-aligned contact to a transistor component located on a semiconductor substrate comprising forming a transistor component opening in a masking layer overlying a semiconductor substrate and using epitaxial lateral overgrowth to form a self-aligned contact, the epitaxial overgrowth beginning in the masking layer opening at an upper surface of the semiconductor substrate and extending normal to and laterally over the masking layer surface.Type: GrantFiled: September 20, 1990Date of Patent: October 29, 1991Assignee: Honeywell Inc.Inventors: Jerry Yue, Michael S. T. Liu
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Patent number: 4810673Abstract: Silicon dioxide is deposited by low pressure chemical vapor deposition (LPCVD) from dichlorosilane plus nitrous oxide, using a larger concentration of dichlorosilane than of nitrous oxide.Type: GrantFiled: September 18, 1986Date of Patent: March 7, 1989Assignee: Texas Instruments IncorporatedInventor: Dean W. Freeman
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Patent number: 4637127Abstract: A method of epitaxying layers on a semiconductor substrate through apertures in an insulating layer formed on a substrate. The layers are grown from the substrate and extend on the insulating layer by reacting dichlorosilane, hydrogen chloride and a carrier gas flow in a chamber under reduced pressure. The layers are used for semiconductors device formation.Type: GrantFiled: July 6, 1982Date of Patent: January 20, 1987Assignee: Nippon Electric Co., Ltd.Inventors: Yukinori Kurogi, Nobuhiro Endo, Kohetsu Tanno