Gp Iii-v Liquid Phase Epitaxy Patents (Class 148/DIG66)
  • Patent number: 5834331
    Abstract: A p-i-n structure for use in photoconductors and diodes is disclosed, being formed of an Al.sub.x Ga.sub.1-x N alloy (X=0.fwdarw.1) with In.sub.y Ga.sub.1-Y N (Y=0.fwdarw.1) which as grown by MOCVD procedure with the p-type layer adjacent the substrate. In the method of the subject invention, buffer layers of p-type material are grown on a substrate and then doped. The active, confinement and cap layers of n-type material are next grown and doped. The structure is masked and etched as required to expose a surface which is ion implanted and annealed. A p-type surface contact is formed on this ion-implanted surface which is of sufficiently low resistance as to provide good quality performance for use in a device.
    Type: Grant
    Filed: October 17, 1996
    Date of Patent: November 10, 1998
    Assignee: Northwestern University
    Inventor: Manijeh Razeghi
  • Patent number: 5707891
    Abstract: A method of manufacturing a light emitting diode, which includes the steps of bringing a semiconductor substrate of p-type or n-type into contact with a growth solution at a high temperature and thereafter, lowering the temperature so as to form a monocrystalline epitaxial layer of the same type as the semiconductor substrate on the semiconductor substrate, subsequently, further lowering the above temperature to form a first monocrystalline epitaxial layer of a reverse type to the epitaxial layer on the epitaxial layer and then, cutting off the growth solution to form an epitaxial wafer as a result, a growth solution to contact the first epitaxial layer of a epitaxial wafer at a high temperature, and thereafter, the temperature is lowered to form a second monocrystalline epitaxial layer of the same kind and type as the first epitaxial layer on the first epitaxial layer.
    Type: Grant
    Filed: November 26, 1991
    Date of Patent: January 13, 1998
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Tadasu Izumi, Masamichi Harada, Yukari Inoguchi
  • Patent number: 5032539
    Abstract: In a method of manufacturing a green diode, an included angle defined by a line extending along the longitudinal direction of light and dark stripes of an oxide region formed on a cleavage surface of a GaP single crystal wafer and a surface of the wafer is set to be a predetermined angle, and a liquid phase epitaxial layer having a p-n junction is formed on the surface of the GaP single crystal wafer.
    Type: Grant
    Filed: July 6, 1989
    Date of Patent: July 16, 1991
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masayuki Watanabe, Masahiro Nakajima
  • Patent number: 4966863
    Abstract: A semiconductor laser device includes a current blocking structure having a p-n-p-n structure, provided on a first conductivity type semiconductor substrate, an active region buried in a stripe shaped groove produced in the current blocking structure, a lower cladding layer grown by liquid phase epitaxy approximately filling the stripe groove, an active layer on the lower cladding layer in the stripe groove, a waveguide layer on the active layer completely filling the groove, and a diffraction grating on the waveguide layer.
    Type: Grant
    Filed: July 11, 1989
    Date of Patent: October 30, 1990
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Hitoshi Mizuochi, Hideyo Higuchi
  • Patent number: 4944811
    Abstract: A material for a light emitting element most suited for a light emitting diode or laser diode which emits visible light of 550 to 650 nm band wavelength. The material provides an at least two-layered structure composed of a GaAs substrate and a Sn doped InGaP layer developed on the substrate without forming a gradient layer therebetween. The mixed crystal composition of the Sn doped InGaP layer as expressed by the molar fraction of GaP is 0.50 to 0.75.According to the method for developing mixed crystals of InGaP, GaP and InP are dissolved in Sn to make a solution. The solution is allowed to come in contact with a GaAs substrate so that InGaP crystals are developed directly on the GaAs substrate without a gradient layer for coordinating the lattice constant formed on the GaAs substrate.
    Type: Grant
    Filed: August 9, 1989
    Date of Patent: July 31, 1990
    Assignees: Tokuzo Sukegawa, Mitsubishi Cable Industries, Ltd.
    Inventors: Tokuzo Sukegawa, Kazuyuki Tadatomo
  • Patent number: 4876210
    Abstract: The effects of excessive lattice mismatch in solution grown heterostructures are reduced by incorporating a lattice graded interface layer between the substrate and the heteroepitaxial layer. The effects of lattice mismatch are also reduced by reducing the contact area with a selective growth mask which controls where growth initiates on the substrate. The effect of mismatched solubility is reduced by double saturation of the solvent and selective supersaturation of the solvent.
    Type: Grant
    Filed: March 4, 1988
    Date of Patent: October 24, 1989
    Assignee: The University of Delaware
    Inventors: Allen M. Barnett, John C. Zolper
  • Patent number: 4870468
    Abstract: An active layer is formed on an n-type InP buffer layer of a substrate. A pair of strip-shaped grooves are formed into the active layer to divide it into a contract portion and side portions. A p-type Inp cladding layer is deposited on the entire surface of the active layer and grooves. The cladding layer is selectively etched to form a mesa portion including the central active portion and expose the buffer layer. An insulating film is coated on the mesa portion and buffer layer, so that a semiconductor light-emitting device is manufactured.
    Type: Grant
    Filed: September 11, 1987
    Date of Patent: September 26, 1989
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Jun'ichi Kinoshita, Motoyasu Morinaga, Hideto Furuyama, Yuzo Hirayama
  • Patent number: 4859628
    Abstract: An interrupted liquid phase epitaxy process for producing distributed feedback laser wafers involves epitaxial growth at a first temperature range followed by epitaxial growth at a second higher temperature range. A prior art liquid phase epitaxy process involves a low temperature soak at a temperature of approximately 615 degrees Centrigrade followed by ramped cooling and epitaxial growth of a guiding layer, active layer and confining layer at a temperature of approximately 595 degrees Centigrade. The interrupted liquid phase epitaxy process involves epitaxial growth of a guiding layer in a manner similar to the prior art process, but growth of the guiding layer is followed by a high temperature soak at a temperature of approximately 645 degrees Centrigrade. Ramped cooling follows, with epitaxial growth of the active layer and confining layer taking place at a temperature of approximately 628 degrees Centigrade.
    Type: Grant
    Filed: April 11, 1988
    Date of Patent: August 22, 1989
    Assignee: Northern Telecom Limited
    Inventors: Douglas G. Knight, William Benyon
  • Patent number: 4849373
    Abstract: In a method for Liquid Phase Epitaxy (LPE) of semi-insulating InP, a solution of P, Ti and a p-type dopant in molten In is cooled in a non-oxidizing ambient at a surface of a substrate to grow an epitaxial layer of doped InP on the surface. The concentration of p-type dopant in the solution is such as to provide a concentration of p-type dopant in the grown epitaxial layer greater than the aggregate concentration of any residual contaminants in the grown epitaxial layer, and the concentration of Ti in the solution is such as to provide a concentration of Ti in the grown epitaxial layer greater than the concentration of p-type dopant in the grown epitaxial layer. The required melt concentrations are determined empirically. The method can be performed at temperature below 650 degrees Celsius and is particularly suited to the LPE growth of semi-insulating InP to isolate InP-InGaAsP buried heterostructure lasers.
    Type: Grant
    Filed: June 2, 1988
    Date of Patent: July 18, 1989
    Assignee: Northern Telecom Limited
    Inventors: D. Gordon Knight, William Benyon
  • Patent number: 4818722
    Abstract: A method for generating a strip laser in a buried hetero-structure composed of layers, wherein a raised strip is etched out of the layer structure and the strip is laterally etched with an erosion melt. The lateral edges of the laser active layer are protected by leaving them covered with a portion of the layer dissolved out by the erosion melt. The deposits thus remaining are used to initiate the generation of an epitaxial layer which extends laterally from the laser-active layer.
    Type: Grant
    Filed: May 26, 1987
    Date of Patent: April 4, 1989
    Assignee: Siemens Aktiengesellschaft
    Inventor: Jochen Heinen
  • Patent number: 4775639
    Abstract: After a liquid-phase epitaxial growth step by an n-type GaAs saturated solution is terminated, a substrate is temporarily dipped in an undoped GaAs saturated or supersaturated solution, and thereafter liquid-phase epitaxial growth is performed by a p-type Al.sub.x Ga.sub.1-x As saturated solution. Thus, the n-type GaAs saturated solution is prevented from being mixed into the p-type Al.sub.x Ga.sub.1-x As saturated solution to contaminate the same, whereby a solar battery of high quality can be obtained even if the number of times of crystallization is increased.
    Type: Grant
    Filed: December 18, 1987
    Date of Patent: October 4, 1988
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventor: Susumu Yoshida
  • Patent number: 4671829
    Abstract: In a method of manufacturing pure green light emitting diodes, after an n-type GaP epitaxial layer with thickness larger than or equal to a value for which the density of dislocation on the surface becomes less than or equal to 1.times.10.sup.4 cm.sup.-2 is grown on an n-type GaP substrate, a p-type GaP epitaxial layer is grown on the above n-type epitaxial layer. Even with the use of a GaP substrate with normal dislocation density, the density of dislocation in the neighborhood of the p-n junction becomes low and therefore GaP green light emitting diodes with high intensity of light emission are obtained.
    Type: Grant
    Filed: February 22, 1985
    Date of Patent: June 9, 1987
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Toshiharu Kawabata, Susumu Koike, Toshio Matsuda, Hitoo Iwasa
  • Patent number: 4637122
    Abstract: An integrated quantum well laser structure which has a plurality of quantum well lasers for providing a plurality of light beams each having a different wavelength for use in wavelength division multiplexing.
    Type: Grant
    Filed: July 29, 1985
    Date of Patent: January 20, 1987
    Assignee: Honeywell Inc.
    Inventors: James K. Carney, Robert M. Kolbas
  • Patent number: 4597166
    Abstract: A semiconductor substrate has a semiconductor substrate main body having a first major surface and a second major surface opposite thereto. At least one recess is formed in the second major surface. The recess defines a semiconductor element formation region between a bottom surface thereof and the first major surface of the substrate main body. Gettering of contaminant impurities such as heavy metals can be effectively performed at the rear surface of the substrate after the formation of a semiconductor element in the element formation region.
    Type: Grant
    Filed: February 8, 1983
    Date of Patent: July 1, 1986
    Assignee: Tokyo Shibaura Denki Kabushiki Kaisha
    Inventor: Hiroshi Iwai