Abstract: A deposit protection cover and a plasma processing apparatus provide a simple solution to deposits adhered to a portion originally considered to be unreachable by plasma without increasing manufacturing cost. The deposit protection cover is detachably installed within a processing chamber for processing a substrate by generating plasma therein so as to cover a preset portion of the processing chamber. The cover includes an aluminum plate having a surface on which an anodic oxidation process is performed. Further, the anodic oxidation process is performed by using an electrode part protruded from a cover main body, an exposed area of an aluminum base surface is reduced by removing the electrode part after the anodic oxidation process is performed, and a cut surface formed after removing the electrode part is positioned at a region that is not directly exposed to the plasma within the processing chamber.

Abstract: Provided are a plasma processing apparatus and a plasma processing method wherein particles generated due to the inner potential of an inner cylinder disposed inside of a vacuum container are reduced. The plasma processing apparatus has, inside of a metal vacuum chamber (11), the inner cylinder (15) composed of a surface-alumited aluminum, disposes a substrate in a plasma diffusion region, and performs plasma processing. A plurality of protruding portions (15a) in point-contact with the vacuum chamber (11) are provided on the lower end portion of the inner cylinder (15), the alumite film (16) on the leading end portion (15b) of each of the protruding portion (15a) is removed, and the inner cylinder and the vacuum chamber (11) are electrically connected to each other.

Abstract: A semiconductor manufacturing equipment includes a first chamber that has a first connection hole, a second chamber that has a second connection hole connected to the first connection hole of the first chamber, an O-ring that is provided between the first chamber and the second chamber so as to surround the first connection hole and the second connection hole, and a cover portion that covers a space between the first chamber and the second chamber.

Abstract: Plasma confinement ring assemblies are provided that include confinement rings adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to avoid polymer deposition on those surfaces. The plasma confinement rings include thermal chokes adapted to localize heating at selected portions of the rings that include the plasma exposed surfaces. The thermal chokes reduce heat conduction from those portions to other portions of the rings, which causes selected portions of the rings to reach desired temperatures during plasma processing.

Abstract: The present invention provides a liquid crystal cell manufacturing device and a method thereof. The liquid crystal cell manufacturing device includes a pre-alignment vacuum chamber, a vacuum lamination chamber and a sealant curing chamber. The pre-alignment vacuum chamber includes a comb-type transferring system for aligning a first substrate with a second substrate and sending them into the vacuum lamination chamber. The vacuum lamination chamber uses a lamination device to laminate the first substrate and the second substrate into a substrate assembly under a nearly vacuum status, and then uses a transferring device to send the substrate assembly to the sealant curing chamber. The sealant curing chamber uses at least one UV spot light source to move above the substrate assembly and irradiate a surface of the substrate assembly to cure at least one sealant in the substrate assembly, and thereby complete manufacture of liquid crystal cells of liquid crystal panels.

Abstract: A gate valve cleaning method that can clean a gate valve that brings an atmospheric transfer chamber and an internal pressure variable transfer chamber that transfer a substrate into communication with each other or shuts them off from each other without bringing about a decrease in the throughput of a substrate processing system. Before the gate valve brings the atmospheric transfer chamber and the internal pressure variable transfer chamber into communication with each other, the pressure in the internal pressure variable transfer chamber is increased so that the pressure in the internal pressure variable transfer chamber can become higher than the pressure in the atmospheric transfer chamber.

Abstract: The present invention presents an improved deposition shield for surrounding a process space in a plasma processing system, wherein the design and fabrication of the deposition shield advantageously provides for a clean processing plasma in the process space with substantially minimal erosion of the deposition shield.

Abstract: A semiconductor device fabricating system 1 includes a casing 10, processing units 12, 13 and 14, for carrying out semiconductor device fabricating processes, disposed inside the casing, and platforms 15, 16 and 17 set outside the casing. The platforms are foldable. Spaces required by the platforms can be reduced and the footprint of the semiconductor device fabricating system can be reduced by folding the platforms.

Abstract: The invention relates to a plasma reactor with high productivity for surface coating or modification of objects and/or substrates by plasma processes in a processing chamber, preferably as vacuum processes at reduced pressure, having an entrance lock to the processing chamber and an exit lock. The invention is to create a plasma reactor of high productivity, which, with uniformly high productivity, will make possible a rapid simple and selective cleaning of the plasma sources and adjacent parts of the processing chamber. According to the invention, two plasma sources (1, 2) are provided, each alternately couplable to a reaction chamber (7) or a re-etching chamber (8). The plasma sources (1, 2) are fixed for this purpose to an alternating means (6) in such manner that the plasma sources (1, 2) are positionable by a rotatory motion of the alternating means (6) in the reaction chamber (7) or the re-etching chamber (8).

Abstract: A vacuum processing apparatus that includes an inner wall member disposed inside of an outer side wall member of a vacuum container, the inner wall member surrounding a side of a sample stand on which a sample to be processed is placed and facing to a plasma generated in a chamber inside of the inner wall member. The apparatus also includes an upper member arranged in the vacuum chamber above a flange portion of the inner wall member, contacting with an upper surface of the flange portion and transmitting a force pressing downwardly in a state where the inside of the vacuum container is reduced in pressure. The inner wall member is thermally connected with a temperature adjusting device which controls a temperature of the inner wall member through the upper surface of the flange portion and the upper member.

Abstract: The present invention presents an improved upper electrode for a plasma processing system, wherein the design and fabrication of an electrode plate with a deposition shield coupled to the upper electrode advantageously provides gas injection of a process gas with substantially minimal erosion of the upper electrode while providing protection to a chamber interior.

Abstract: A method of manufacturing displays, includes at least forming a metal pattern on a surface of an insulating substrate, forming an insulating film on the metal pattern, forming a pattern of a photosensitive resin on the insulating film, and forming a contact hole in the insulating film with the film of a photosensitive resin used as a mask. The forming a contact hole is a dry etching method in which an electric field is generated between a pair of opposed electrodes after an insulating substrate has been mounted on one electrode that includes aluminum in at least a surface thereof. The dry etching method includes forming a contact hole in the insulating film with an outer circumferential portion, which surrounds a region on which the insulating substrate is mounted, of the one electrode covered with an insulating material.

Abstract: Described is a vacuum processing apparatus that includes a vacuum container which has a processing chamber inside thereof, wherein a plasma used for processing a sample is formed inside the processing chamber. The processing chamber has an upper side wall which surrounds a space in which the plasma is formed and contacts the plasma, and a lower side wall inside of which a sample stand, supporting the sample to be processed, is arranged. A connecting portion is provided between the upper and lower side walls, and a heater is provided for heating the upper side wall. The apparatus also includes structure at the connecting portion to impede heat transfer between the upper and lower side walls.

Abstract: In film-forming devices and plasma-processing devices, filmy matter adheres to the surfaces of the inner parts and it peels to cause dust and particles in the devices. In the devices, the dust and particles contaminate the objects for film formation thereon or the objects to be processed with plasma. For preventing the objects from being contaminated with them, the inner parts of the devices must be frequently exchanged every time when they have received any minor filmy matter thereon, and this lowers the productivity in the devices. When a modified glass part of which the surface is modified with spherical or bell-like island projections having a width and a height of from a few ?m to a few hundreds ?m is used in a film-forming device and in a plasma-processing device, then its ability to hold the filmy substance having adhered thereto is good and its resistance to plasma is also good.

Abstract: A magnet assembly for a plasma process chamber has a hollow collar comprising a cross-section that is absent seams. The hollow collar has an open end face and a cap is provided to seal the open end face of the collar. A plurality of magnets are in the hollow collar, the magnets being insertable through the open end face. The collar is capable of being snap fitted onto the chamber wall. The magnet assembly can also comprise one or more of the collars such that the collars, when installed, form a substantially continuous ring about a chamber wall.

Abstract: The invention encompasses a method of enhancing selectivity of etching silicon dioxide relative to one or more organic substances. A material comprising one or more elements selected from Group VIII of the periodic table is provided within a reaction chamber; and a substrate is provided within the reaction chamber. The substrate has both a silicon-oxide-containing composition and at least one organic substance thereover. The silicon-oxide-containing composition is plasma etched within the reaction chamber. The plasma etching of the silicon-oxide-containing composition has increased selectivity for the silicon oxide of the composition relative to the at least one organic substance than would plasma etching conducted without the material in the chamber. The invention also encompasses a plasma reaction chamber assembly. The assembly comprises at least one interior wall, and at least one liner along the at least one interior wall. The liner comprises one or more of Ru, Fe, Co, Ni, Rh, Pd, Os, W, Ir, Pt and Ti.

Abstract: A tubular member formed of silicon staves and arranged in a circular pattern to form a central bore in which a wafer support tower can be inserted for batch thermal processing in an oven. The staves are formed along an axis with an interlocking keyway structure in which axially extending hooks engage axially extending catches formed in back of the hooks on neighboring staves. An adhesive, such as a silica-forming agent and silicon powder, coat the keyway structure before assembly and is cured after assembly, so as to bond the staves together. A similar structure may be used to form a plate structure from an array of smaller parts with interlocking structure formed between neighboring parts.

Abstract: Particle flaking is reduced in a semiconductor wafer processing apparatus by installing a chamber shield assembly in the chamber of the apparatus. The shield assembly includes a plurality of nested shields that are supported out of contact with each other and suspended such that, during thermal expansion and contraction, gaps are maintained that are sufficient to avoid arcing. Alignment structure on the shields and on the chamber walls force the shields to align concentrically and maintain the gaps. The shields are made of aluminum or another thermally conductive material and have cross-sectional areas large enough to provide high thermal conductivity throughout the shields. Mounting flanges and other mounting surfaces are provided on the shields that form intimate thermal contact with sufficient contacting area to insure high thermal conductivity from the shields to the temperature controlled walls of the chamber.

Abstract: The present invention presents an improved upper electrode for a plasma processing system, wherein the design and fabrication of an electrode plate with a deposition shield coupled to the upper electrode advantageously provides gas injection of a process gas with substantially minimal erosion of the upper electrode while providing protection to a chamber interior.

Abstract: The present invention presents an improved deposition shield for surrounding a process space in a plasma processing system, wherein the design and fabrication of the deposition shield advantageously provides for a clean processing plasma in the process space with substantially minimal erosion of the deposition shield.

Abstract: An improvement to a Novellus HDP SPEED reactor chamber is described. An evacuation port of the Novellus SPEED Chamber is at one location in the chamber to remove injected cleaning gas from the chamber and there is a single input for cleaning gas connection into the chamber. In accordance an improvement a plurality of clean gas injectors is positioned on an adapter in the chamber and connected to the single input gas connection for distributing the cleaning gas in the chamber with the injectors spaced away from the evacuation port. The adapter is a U-shaped adapter and is positioned in the chamber with the adapter connected at the base to the single input gas connection. The adapter has two semicircular branch legs extending in opposite directions about the chamber to free ends that are connected to gas injectors. The free ends with the injectors are located in the chamber almost on the opposite end of the chamber from the evacuation port.

Abstract: A vacuum plasma chamber for processing a workpiece includes first and second electrodes for electrical coupling with gas in the chamber and respectively connected to first and second relatively high and low frequency RF sources. The chamber includes a wall at a reference potential and a plasma confinement region spaced from the wall. A filter arrangement connected to the sources and the electrodes enables current from the first source to flow to the first electrode, prevents the substantial flow of current from the first source to the second electrode and the second source, and enables current from the second source to flow to the first and second electrodes and prevents the substantial flow of current from the second source to the first source.

Abstract: A component for a substrate processing chamber has a structure composed of aluminum oxide. The structure has a roughened surface having a roughness average of from about 150 to about 450 microinches. A plasma sprayed ceramic coating of aluminum oxide is deposited on the roughened surface of the structure. The component may be a dome shaped ceiling of the chamber.

Abstract: This invention is directed to a method for etching films on semiconductor substrates and cleaning etch chambers. The method includes an improved processing sequence and cleaning method where residue formed from processing a previous substrate are cleaned by the etching process used to remove an exposed layer of material from the present substrate. The process provides improved substrate throughput by combining the step to clean residue from a previous substrate with an etch step conducted on the present substrate. Applicants have found the method particularly useful in processing structures such as DRAM stacks, especially where the residue is formed by a trench etched in the previous silicon substrate and the exposed layer etched from the present substrate is silicon nitride.

Abstract: A domed enclosure wall for a plasma processing chamber is made from a dielectric material having a roughened surface with a roughness average of from about 150 to about 450 microinches. A plasma sprayed ceramic coating is applied on the roughened surface of the dielectric material. The plasma sprayed coating comprises a textured surface having a roughness with an average skewness that is a negative value. When the enclosure wall is used in a plasma processing chamber, sputtered material generated by a plasma formed in a plasma processing chamber has good adherence to the textured surface.

Abstract: Apparatus for plasma etching a layer of material upon a substrate comprising an anode having a first region protruding from a second region, wherein the second region defines a plane and the first region extends from said plane. In one embodiment, at least one solenoid is disposed near the apparatus to magnetize the plasma.

Abstract: A deposition ring which has a cut out on its interior circumferential edge. The deposition ring is configured to contact an edge of an electrostatic chuck and shield at least a portion of the electrostatic chuck during a deposition process wherein material is deposited onto an item, such as a semiconductor wafer, which is disposed on the electrostatic chuck. The interior circumferential edge of the deposition ring includes a surface portion which is configured to engage the edge of the electrostatic chuck, and includes the cut out portion which is configured to be spaced away and not contact the edge of the electrostatic chuck during the deposition process. As such, the deposition ring does not tend to bind with the electrostatic chuck during the deposition process.

Abstract: In a substrate vacuum processing chamber, a second inner slit passage door apparatus and method to supplement the normal slit valve and its door at the outside of the chamber. The inner slit passage door, blocks the slit passage at or adjacent the substrate processing location in a vacuum processing chamber to prevent process byproducts from depositing on the inner surfaces of the slit passage beyond the slit passage door and improves the uniformity of plasma in the processing chamber by eliminating a large cavity adjacent to the substrate processing location into which the plasma would otherwise expand.

Abstract: There is provided a treatment container which enables to prolong a period of time taken for reaction products, such as a halide generated through reaction with corrosive halide gas, to exfoliate and fall down as particles, and decreases the frequency of periodic maintenance operation, thereby implementing increase of operating time. The treatment container constituting a chamber or a bell jar has a portion of the inner surface to be exposed to corrosive halide gas plasma and is formed with a sintered body mainly composed of a compound of yttrium and aluminum with oxygen, and the portion has a roughened surface of a mean roughness Ra of 1.5 to 10 &mgr;m.

Abstract: A plasma processing chamber having a chamber liner and a liner support, the liner support including a flexible wall configured to surround an external surface of the chamber liner, the flexible wall being spaced apart from the wall of the chamber liner. The apparatus can include a heater thermally connected to the liner support so as to thermally conduct heat from the liner support to the chamber liner. The liner support can be made from flexible aluminum material and the chamber liner comprises a ceramic material. The flexible wall can include slots which divide the liner support into a plurality of fingers which enable the flexible wall to absorb thermal stresses.

Abstract: A vascular catheter includes a flexible catheter body having proximal and distal ends and an elongate housing secured to the distal end of the catheter body. An interactional device is disposed on one side of the housing, and at least two spaced-apart inflatable chambers are located on the other side of the housing generally at its proximal and distal ends, respectively. The inflatable chambers may be expanded simultaneously or separately, and the spaced-apart positioning of the chambers provides for stable positioning of the housing during atherectomy procedures, imaging procedures, and the like. The balloon is conveniently connected to the housing by an integral flange structure which is secured through an inflation aperture on the housing side. The balloon may be inflated through an annular inflation which is defined by a separate isolation tube disposed in the central lumen of the catheter body.