Abstract: A film forming apparatus includes: a pressure-reducible processing container; a pressure gauge configured to detect a pressure in the processing container; and a controller, wherein the controller is configured to repeat a cycle including a step of adjusting a zero point of the pressure gauge and a step of executing a film forming process in the processing container until an ultimate pressure, which is detected by the pressure gauge when an interior of the processing container is evacuated to a highest reachable vacuum degree after the step of executing the film forming process, reaches a target range.

Abstract: Methods and apparatus for regulating the temperature of a component in a plasma-enhanced process chamber are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber and an RF source to provide RF energy to form a plasma in the process chamber. A component is disposed in the process chamber so as to be heated by the plasma when formed. A heater is configured to heat the component and a heat exchanger is configured to remove heat from the component. A chiller is coupled to the heat exchanger via a first flow conduit having an on/off flow control valve disposed therein and a bypass loop to bypass the flow control valve, wherein the bypass loop has a flow ratio valve disposed therein.

Abstract: Reversible thermal rectifiers for selectively controlling the direction of heat flow include a plurality of asymmetrically shaped objects disposed in a fluid medium, wherein each of the plurality of asymmetrically shaped objects include a refractive side and a reflective side such that heat flows past the plurality of asymmetrically shaped objects when approaching from the refractive side, and heat is reflected from the plurality of asymmetrically shaped objects when approaching from the reflective side, and a bidirectional field actuator system that selectively orients the plurality of asymmetrically shaped objects between a first orientation, wherein the reflective sides of the plurality of asymmetrically shaped objects face a first direction, and a second orientation, wherein the reflective sides of the plurality of asymmetrically shaped objects face a second direction, substantially opposite the first direction.

Abstract: An apparatus and method for cooling a planar workpiece, such as a substrate of a recording disk, in an evacuated environment has a heat exchanging structure with at least two heat sinks having substantially parallel facing surfaces disposed within a vacuum chamber. A drive arrangement is connected to the heat sinks to controllably and dynamically drive the parallel facing surfaces of the heat sinks towards and away from each other.

Abstract: A cooling system for a vacuum processing apparatus is provided with an internal heat conduction path for transfer of heat entering the subject body through the vacuum processing apparatus, a heat radiation path for radiation of the heat to an outside of the vacuum processing apparatus and a heat conduction path for regulation of quantity of heat transfer between the internal heat conduction path and the heat radiation path. Preferably, a heat pipe is applied to the internal heat conduction path.

Abstract: Heating device for the heating and gasification of urea or an urea solution, particularly for internal combustion engines, wherein said heating device is designed for installation in a gas line extending in a direction of flow and wherein said heating device has at least two gas-permeable heating surfaces that are spaced apart from each other in the direction of flow and that define a heating chamber. In order to create an improved heating device for stable urea gasification in an exhaust gas line that guarantees a uniform temperature distribution in the heating room as well as a quick response time, according to the invention an inlet opening is provided that discharges into the heating chamber between the at least two heating surfaces and through which the urea or urea solutions can be fed into the heating chamber.

Abstract: A passive gas-gap heat switch for use with a multi-stage continuous adiabatic demagnetization refrigerator (ADR). The passive gas-gap heat switch turns on automatically when the temperature of either side of the switch rises above a threshold value and turns off when the temperature on either side of the switch falls below this threshold value. One of the heat switches in this multistage process must be conductive in the 0.25° K to 0.3° K range. All of the heat switches must be capable of switching off in a short period of time (1-2 minutes), and when off to have a very low thermal conductance. This arrangement allows cyclic cooling cycles to be used without the need for separate heat switch controls.

Abstract: A chuck body mounts a substrate within a vacuum chamber. Contiguous portions of the substrate and the chuck body form a heat-transfer interface. An intermediate sealing structure seals the chuck body to the substrate independently of any contact between the chuck body and the substrate and forms a separately pressurizable region within the vacuum chamber. A control system promotes flows of fluid through a periphery of the heat-transfer interface within the separately pressurizable region for controlling fluid pressures and related transfers of heat at the heat-transfer interface according to an overall aim of regulating the substrate temperature.

Abstract: A temperature adjusting system includes a chamber, a cooler which cools an inert gas to be supplied to the chamber, a circulating path which circulates the inert gas through the chamber and the cooler, a shut-off valve arranged in the circulating path between the chamber and an outlet port of the cooler, and a shut-off valve arranged in the circulating path between the chamber and an inlet port of the cooler.

Abstract: The present invention discloses a heat transfer changeover switch capable of effecting or cutting off positively heat transfer. The switch requires no contact or separation of a solid contact of a switch piece, is easily incorporated in a fine electronic device and generates no heat or vibration during a switch operation. The switch includes a heat pipe having a pipe for storing a heating medium therein disposed between a hot heat source and a cold heat source. A heating medium supplying/discharging device is provided for supplying/discharging the heating medium to and from the pipe. Heat transfer between the hot heat source and the cold heat source via the heat pipe is effected or cut off by using the heating medium supplying/discharging device that changes over between supply and discharge of the heating medium to and from the pipe.

Abstract: A method of substrate temperature control for plasma processing apparatus in which a substrate which is being held on a substrate holder in a process chamber is being processed, and He gas is passed through the gap between the substrate and the substrate mounting surface during the processing of the substrate, the substrate temperature is controlled by the thermal transfer characteristics of the gas and the substrate is cooled to the prescribed temperature, and the pressure of the He gas is preset by a pressure setting part 50a, the actual pressure is measured with a pressure gauge 49, and the gas flow rate is controlled in such a way that the measured pressure becomes equal to the set pressure by a pressure control valve 46. Furthermore, the substrate temperature controllability is assessed by monitoring the gas flow rate with a substrate temperature controllability assessment part 50b.

Abstract: A method for controlling heat exchange in a nuclear reactor. The reactor contains at least one thermal valve, at least one heat exchanger having a coolant flowing therein, with the heat exchanger being immersed in a pool containing a fluid. The heat exchanger is confined by a container having an upper part with an opening therein and a lower part having means for introducing the fluid through such lower part as well as means for partially or totally opening or closing said opening in the upper part and means for partially or totally opening or closing opening in the lower part. The method comprises the steps of closing the opening in the upper part of the container to thereby vaporize said fluid, in order to cause a cessation of heat exchange between the coolant and the fluid; and opening the opening in the upper part of the container to thereby cause the fluid to be heated and to rise by convection, thereby permitting heat exchange to occur between the coolant and the fluid.

Abstract: A temperature controlled chuck (20) includes a heating unit (24) and a cooling unit (34). A first cavity (30) separates the heating unit (24) from a wafer substrate (18), and a second cavity (50) separates the cooling unit (34) from the heating unit (24). A first fluid delivery system (60) conducts fluid to the first cavity (30) to facilitate exchanges of heat between the heating unit (24) and the substrate (18). A second fluid delivery system (70) conducts fluid to the second cavity (50) to facilitate exchanges of heat between the heating unit (24) and the cooling unit (34). A control system (90) raises the temperature of the substrate (18) by increasing power to the heating unit (24) and by evacuating fluid from the second cavity (50) and lowers the temperature of the substrate (18) by reducing power to the heating unit (24) and by conducting fluid to the second cavity (50).

Abstract: A wafer cooling device (WCD) for cooling a substrate, such as a wafer, during processing is presented. The substrate is mounted to an WCD heat transfer surface, thereby forming a cavity in between the substrate and the heat transfer surface into which gas is incorporated. An array of protuberances within the cavity provide support for the wafer. Contact heat conduction between the substrate and WCD is reduced by reducing the amount of direct contact between the substrate and WCD. Thus the heat transfer coefficient from the substrate, and hence substrate temperature, is controlled by adjusting the gas pressure in the cavity. In alternative embodiments, gas distribution channels are formed in the WCD heat transfer surface to increase gas pressure uniformity between the wafer and the WCD thus improving temperature uniformity across the substrate.

Abstract: A temperature controlled chuck (20) includes a heating unit (24) and a cooling unit (34). A first cavity (30) separates the heating unit (24) from a wafer substrate (18), and a second cavity (50) separates the cooling unit (34) from the heating unit (24). A first fluid delivery system (60) conducts fluid to the first cavity (30) to facilitate exchanges of heat between the heating unit (24) and the substrate (18). A second fluid delivery system (70) conducts fluid to the second cavity (50) to facilitate exchanges of heat between the heating unit (24) and the cooling unit (34). A control system (90) raises the temperature of the substrate (18) by increasing power to the heating unit (24) and by evacuating fluid from the second cavity (50) and lowers the temperature of the substrate (18) by reducing power to the heating unit (24) and by conducting fluid to the second cavity (50).

Abstract: An apparatus and method for controlling the temperature of an object, in particular a semiconductor wafer support structure in a wafer processing chamber. A gas gap is created between the two adjacent objects of different temperatures. The pressure in the gap is adjusted to control the thermal conductivity of the gas between the two structures. To have a large heat flow between the two objects so that their temperatures can be closely matched, the pressure is increased. To maintain the temperature of the object sought to be controlled regardless of the temperature of the adjacent item (heat source/sink) the pressure is reduced to a strong vacuum (acting as insulation) so that very little heat flow occurs through the gas gap.

Abstract: This invention relates to a vacuum processing method and apparatus. When a sample is plasma processed under a reduced pressure, a sample bed is cooled by a cooling medium kept at a predetermined temperature lower than an etching temperature, the sample is held on the sample bed, a heat transfer gas is supplied between the back of the sample and the sample installation surface of the sample bed, and the pressure of the heat transfer gas is controlled so as to bring the sample to a predetermined processing temperature. Before the step of holding the sample on the sample bed and supplying the heat transfer gas, heat transfer gas remaining upstream and downstream of the flow rate regulator in the supply line for the heat transfer gas is vacuum exhausted. This is accomplished using a bypass line connected upstream and downstream of the flow rate regulator and an arrangement of appropriate valves.