Abstract: A tine raking device includes a frame and a conveyor assembly supported on the frame. The conveyor assembly has a conveyor belt defining perforations sized to allow passage therethrough of granules of sand and to prevent passage therethrough of larger sized debris to be removed from a ground surface. Flexible tines extending outwardly from the conveyor belt. The tines are arranged in rows across a width of the conveyor belt. The rows each are longitudinally spaced from adjacent rows along the conveyor belt such that a generally unimpeded path is defined along an outer surface of the conveyor belt for debris to flow between adjacent tines along an associated row. The conveyor assembly includes a lower section for permitting the tines to contact and remove debris from a ground surface being cleaned, and an inclined section for lifting debris on the conveyor belt away from the ground surface being cleaned.

Abstract: A machine for removing articles such as debris and the like deposited on a tract of ground, comprising a wheel unit; a support frame mounted on said wheel unit, having means for advancing said machine along said tract of ground; a endless conveyor mounted on said support frame, having a plurality of tines projecting from an outer side thereof and a flight extending from a front end adjacent ground level, upwardly and inwardly to an elevated rear end; a receptacle mounted on said support frame, positioned to receive articles removed by said tines and carried upwardly and rearwardly on said conveyor and discharged into said receptacle, and having a set of tines cooperable with said conveyor tines to dislodge articles carried by said conveyor tines; and means mounted on said support frame for driving said conveyor.

Abstract: A metal-containing semiconductor layer having a high dielectric constant is formed with a method that avoids inclusion of contaminant elements that reduce dielectric constant of metals. The metal-containing semiconductor layer is formed overlying a substrate in a chamber. A precursor is introduced to deposit at least a portion of the metal-containing semiconductor layer. The precursor contains one or more elements that, if allowed to deposit in the metal-containing layer, would become impurity elements. A reactant gas is used to purify the metal-containing layer by removing impurity elements from the metal-containing layer which were introduced into the chamber by the precursor.