Compositions Patents (Class 174/138C)
  • Patent number: 6153831
    Abstract: A composite insulation of S2 glass fibers and epoxy is formed having a more nearly uniform coefficient of thermal expansion in all three planes for use in cryogenic superconductor applications. The glass fibers have a three-dimensional weave.
    Type: Grant
    Filed: July 24, 1997
    Date of Patent: November 28, 2000
    Assignee: BWX Technologies, Inc.
    Inventors: Charles M. Weber, Timothy A. Antaya
  • Patent number: 6040528
    Abstract: An electrically insulating supporting structure for a high voltage electric apparatus having a high voltage charging part and a ground potential part, the structure being adapted to be disposed between the high voltage charging part apparatus and the ground potential part. The structure includes an organic insulating structure formed in a predetermined shape, and an inorganic insulating layer formed on a surface of the organic insulating structure and an intermediate layer consisting essentially of an organic and an inorganic powder.
    Type: Grant
    Filed: October 17, 1994
    Date of Patent: March 21, 2000
    Assignee: Fuji Electric Co., Ltd.
    Inventors: Tadao Kitamura, Hisaji Shinohara
  • Patent number: 5993947
    Abstract: Dielectric materials comprising Ca.sub.2 Ta.sub.2-x Nb.sub.x O.sub.7 have high dielectric constants (Ks) and relatively low temperature coefficients of dielectric constants (TCKs). Preferably, in this composition 0.20.ltoreq.x.ltoreq.1.20 and more preferably 0.32.ltoreq.x.ltoreq.0.40, and particularly preferred is the composite where x is 0.36. With a preferred embodiment where x is about 0.36, the dielectric constant is near 30 and the TCK is about 2 ppm/.degree.C., and the Q of the polycrystalline ceramic at 1 MHz is approximately 5000.
    Type: Grant
    Filed: November 17, 1997
    Date of Patent: November 30, 1999
    Assignee: Lucent Technologies Inc.
    Inventors: Robert Joseph Cava, James Joseph Krajewski
  • Patent number: 5677052
    Abstract: Aluminium nitride ceramics improved in heat radiation property used as a substrate for integrated circuits and package material, comprising a sintered article consisting mainly of aluminium nitride and having a thermal conductivity higher than 100.multidot.W/m.multidot.K at room temperature and a surface layer consisting mainly of aluminium nitride or oxide glass deposited on the sintered article.A paste of aluminium nitride powder or oxide glass powder is coated on a surface of the sintered article of aluminium nitride and then is sintered to prepare a dense smooth surface layer.
    Type: Grant
    Filed: August 15, 1996
    Date of Patent: October 14, 1997
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Kouhei Shimoda, Kazuya Kamitake, Hirohiko Nakata, Kazutaka Sasaki, Masuhiro Natsuhara, Harutoshi Ukegawa
  • Patent number: 5648148
    Abstract: A heat-sinked electronic component includes a first layer of synthetic diamond having a relatively low thermal conductivity. A second layer of synthetic diamond is adjacent the first layer, the second layer of synthetic diamond having a relatively high thermal conductivity, the second layer being thinner than the first layer. An electronic component is mounted on the second layer of synthetic diamond. In a disclosed embodiment, the thermal conductivity of the diamond of the second layer is at least fifteen percent higher than the thermal conductivity of the diamond of the first layer, and the first layer is at least twice as thick as second layer.
    Type: Grant
    Filed: May 17, 1995
    Date of Patent: July 15, 1997
    Assignee: Saint Gobain/Norton Industrial Ceramics Corp.
    Inventor: Matthew Simpson
  • Patent number: 5539154
    Abstract: A plasma enhanced chemical vapor deposition process for producing a fluorinated silicon nitride film on a substrate is disclosed. The process utilizes a mixture of silane, perfluorosilane and nitrogen to produce films of high conformality and stability. The silane and perfluorosilane in the mixture are in a ratio of 0.05 to 1 on a volume basis. The preferred silane is SiH.sub.4 and the preferred perfluorosilane is SiF.sub.4. Films prepared by the process are disclosed and their properties are described.
    Type: Grant
    Filed: April 27, 1995
    Date of Patent: July 23, 1996
    Assignee: International Business Machines Corporation
    Inventors: Son V. Nguyen, David M. Dobuzinsky, Douglas J. Dopp, David L. Harmon
  • Patent number: 4382881
    Abstract: A method of preparing an antistatic coating exhibiting a desired value of surface resistivity which is substantially stable with respect to time takes as its starting point a commercial antistatic product having a synthetic resin base and substantially free from metallic particles but of which the surface resistivity, measured after mixing with its hardener and drying, is very much below the desired value. A compatible insulating resin is added to this product so as to raise the surface resistivity, still measured after mixing with the hardener and drying, to a value much higher than the desired value. The resulting product is then subjected to an accelerated ageing treatment causing a reduction in surface resistivity with terminal asymptotic development to the level of the desired value. Such a coating may be applied to radomes and other aircraft surface elements, and has the advantage that its conductivity does not increase appreciably with age.
    Type: Grant
    Filed: August 14, 1980
    Date of Patent: May 10, 1983
    Assignee: Avions Marcel Dassault-Breguet Aviation
    Inventor: Fernand J. Levy
  • Patent number: 4223071
    Abstract: New high voltage insulating compositions are disclosed. The compositions comprise a polymer (e.g. a polysiloxane, epoxide resin or a polymer of one or more olefins or substituted olefins), an antitracking additive (e.g. an alumina hydrate), and certain phosphorus-containing compounds which have been found to provide the compositions with greatly improved resistance to erosion by high voltage stress. The phosphorus-containing compounds include phosphonates, phosphates, phosphites, phosphinates, phosphonites, phosphinites, phosphine oxides and sulfides, and phosphines, and salts and complexes thereof. The phosphorus-containing compound can react in situ with the polymer or other ingredients of the composition.
    Type: Grant
    Filed: January 13, 1978
    Date of Patent: September 16, 1980
    Assignee: Raychem Corporation
    Inventors: Nicodemus E. Boyer, Travers K. Cammack, II, David D. Nyberg
  • Patent number: 4219607
    Abstract: New high voltage insulating compositions are disclosed. The compositions comprise a polymer (e.g. a polysiloxane, epoxide resin or a polymer of one or more olefins or substituted olefins), an antitracking additive (e.g. an alumina hydrate), and certain phosphorus-containing compounds which have been found to provide the compositions with greatly improved resistance to erosion by high voltage stress. The phosphorus-containing compounds include phosphonates, phosphates, phosphites, phosphinates, phosphonites, phosphinites, phosphine oxides and sulfides, and phosphines, and salts and complexes thereof. The phosphorus-containing compound can react in situ with the polymer or other ingredients of the composition.
    Type: Grant
    Filed: January 13, 1978
    Date of Patent: August 26, 1980
    Assignee: Raychem Corporation
    Inventors: Travers K. Cammack, II, David D. Nyberg
  • Patent number: 4100089
    Abstract: An improved high voltage insulating material comprising one or more polymers and an anti-tracking and erosion inhibiting composition comprising a hydrate of alumina and one or more compounds selected from the groups consisting of nickel phosphate, phosphinic acid or a derivative thereof, phosphonous acid or a derivative thereof, and phosphonic acid or a derivative thereof. The composition functions to prevent failure by tracking and to substantially retard failure by erosion.
    Type: Grant
    Filed: January 16, 1976
    Date of Patent: July 11, 1978
    Assignee: Raychem Corporation
    Inventors: Travers Kregg Cammack, II, David Dolph Nyberg