Compositions Patents (Class 174/138C)
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Patent number: 6153831Abstract: A composite insulation of S2 glass fibers and epoxy is formed having a more nearly uniform coefficient of thermal expansion in all three planes for use in cryogenic superconductor applications. The glass fibers have a three-dimensional weave.Type: GrantFiled: July 24, 1997Date of Patent: November 28, 2000Assignee: BWX Technologies, Inc.Inventors: Charles M. Weber, Timothy A. Antaya
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Patent number: 6040528Abstract: An electrically insulating supporting structure for a high voltage electric apparatus having a high voltage charging part and a ground potential part, the structure being adapted to be disposed between the high voltage charging part apparatus and the ground potential part. The structure includes an organic insulating structure formed in a predetermined shape, and an inorganic insulating layer formed on a surface of the organic insulating structure and an intermediate layer consisting essentially of an organic and an inorganic powder.Type: GrantFiled: October 17, 1994Date of Patent: March 21, 2000Assignee: Fuji Electric Co., Ltd.Inventors: Tadao Kitamura, Hisaji Shinohara
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Patent number: 5993947Abstract: Dielectric materials comprising Ca.sub.2 Ta.sub.2-x Nb.sub.x O.sub.7 have high dielectric constants (Ks) and relatively low temperature coefficients of dielectric constants (TCKs). Preferably, in this composition 0.20.ltoreq.x.ltoreq.1.20 and more preferably 0.32.ltoreq.x.ltoreq.0.40, and particularly preferred is the composite where x is 0.36. With a preferred embodiment where x is about 0.36, the dielectric constant is near 30 and the TCK is about 2 ppm/.degree.C., and the Q of the polycrystalline ceramic at 1 MHz is approximately 5000.Type: GrantFiled: November 17, 1997Date of Patent: November 30, 1999Assignee: Lucent Technologies Inc.Inventors: Robert Joseph Cava, James Joseph Krajewski
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Patent number: 5677052Abstract: Aluminium nitride ceramics improved in heat radiation property used as a substrate for integrated circuits and package material, comprising a sintered article consisting mainly of aluminium nitride and having a thermal conductivity higher than 100.multidot.W/m.multidot.K at room temperature and a surface layer consisting mainly of aluminium nitride or oxide glass deposited on the sintered article.A paste of aluminium nitride powder or oxide glass powder is coated on a surface of the sintered article of aluminium nitride and then is sintered to prepare a dense smooth surface layer.Type: GrantFiled: August 15, 1996Date of Patent: October 14, 1997Assignee: Sumitomo Electric Industries, Ltd.Inventors: Kouhei Shimoda, Kazuya Kamitake, Hirohiko Nakata, Kazutaka Sasaki, Masuhiro Natsuhara, Harutoshi Ukegawa
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Patent number: 5648148Abstract: A heat-sinked electronic component includes a first layer of synthetic diamond having a relatively low thermal conductivity. A second layer of synthetic diamond is adjacent the first layer, the second layer of synthetic diamond having a relatively high thermal conductivity, the second layer being thinner than the first layer. An electronic component is mounted on the second layer of synthetic diamond. In a disclosed embodiment, the thermal conductivity of the diamond of the second layer is at least fifteen percent higher than the thermal conductivity of the diamond of the first layer, and the first layer is at least twice as thick as second layer.Type: GrantFiled: May 17, 1995Date of Patent: July 15, 1997Assignee: Saint Gobain/Norton Industrial Ceramics Corp.Inventor: Matthew Simpson
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Patent number: 5539154Abstract: A plasma enhanced chemical vapor deposition process for producing a fluorinated silicon nitride film on a substrate is disclosed. The process utilizes a mixture of silane, perfluorosilane and nitrogen to produce films of high conformality and stability. The silane and perfluorosilane in the mixture are in a ratio of 0.05 to 1 on a volume basis. The preferred silane is SiH.sub.4 and the preferred perfluorosilane is SiF.sub.4. Films prepared by the process are disclosed and their properties are described.Type: GrantFiled: April 27, 1995Date of Patent: July 23, 1996Assignee: International Business Machines CorporationInventors: Son V. Nguyen, David M. Dobuzinsky, Douglas J. Dopp, David L. Harmon
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Patent number: 4382881Abstract: A method of preparing an antistatic coating exhibiting a desired value of surface resistivity which is substantially stable with respect to time takes as its starting point a commercial antistatic product having a synthetic resin base and substantially free from metallic particles but of which the surface resistivity, measured after mixing with its hardener and drying, is very much below the desired value. A compatible insulating resin is added to this product so as to raise the surface resistivity, still measured after mixing with the hardener and drying, to a value much higher than the desired value. The resulting product is then subjected to an accelerated ageing treatment causing a reduction in surface resistivity with terminal asymptotic development to the level of the desired value. Such a coating may be applied to radomes and other aircraft surface elements, and has the advantage that its conductivity does not increase appreciably with age.Type: GrantFiled: August 14, 1980Date of Patent: May 10, 1983Assignee: Avions Marcel Dassault-Breguet AviationInventor: Fernand J. Levy
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Patent number: 4223071Abstract: New high voltage insulating compositions are disclosed. The compositions comprise a polymer (e.g. a polysiloxane, epoxide resin or a polymer of one or more olefins or substituted olefins), an antitracking additive (e.g. an alumina hydrate), and certain phosphorus-containing compounds which have been found to provide the compositions with greatly improved resistance to erosion by high voltage stress. The phosphorus-containing compounds include phosphonates, phosphates, phosphites, phosphinates, phosphonites, phosphinites, phosphine oxides and sulfides, and phosphines, and salts and complexes thereof. The phosphorus-containing compound can react in situ with the polymer or other ingredients of the composition.Type: GrantFiled: January 13, 1978Date of Patent: September 16, 1980Assignee: Raychem CorporationInventors: Nicodemus E. Boyer, Travers K. Cammack, II, David D. Nyberg
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Patent number: 4219607Abstract: New high voltage insulating compositions are disclosed. The compositions comprise a polymer (e.g. a polysiloxane, epoxide resin or a polymer of one or more olefins or substituted olefins), an antitracking additive (e.g. an alumina hydrate), and certain phosphorus-containing compounds which have been found to provide the compositions with greatly improved resistance to erosion by high voltage stress. The phosphorus-containing compounds include phosphonates, phosphates, phosphites, phosphinates, phosphonites, phosphinites, phosphine oxides and sulfides, and phosphines, and salts and complexes thereof. The phosphorus-containing compound can react in situ with the polymer or other ingredients of the composition.Type: GrantFiled: January 13, 1978Date of Patent: August 26, 1980Assignee: Raychem CorporationInventors: Travers K. Cammack, II, David D. Nyberg
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Patent number: 4100089Abstract: An improved high voltage insulating material comprising one or more polymers and an anti-tracking and erosion inhibiting composition comprising a hydrate of alumina and one or more compounds selected from the groups consisting of nickel phosphate, phosphinic acid or a derivative thereof, phosphonous acid or a derivative thereof, and phosphonic acid or a derivative thereof. The composition functions to prevent failure by tracking and to substantially retard failure by erosion.Type: GrantFiled: January 16, 1976Date of Patent: July 11, 1978Assignee: Raychem CorporationInventors: Travers Kregg Cammack, II, David Dolph Nyberg