Abstract: The present invention relates to semiconductor crystal growth equipments. A vapor controlled czochralski (VCZ) single crystal growth apparatus comprises a single crystal furnace, a heating unit, a mechanical transmission unit, and a gaseous adjustment unit. A hot-wall sealed container is mounted in the single crystal furnace, and a crucible is mounted within the hot-wall sealed container. The hot-wall sealed container includes an upper container part and a lower container part. A sealing connection device is provided between the upper and lower container parts. A crucible-transmitting shaft and a seed shaft are inserted into the hot-wall sealed container through respective sealing devices.

Abstract: A switch for use in an inductive energy store transfer circuit utilizes a quantity of electrically conductive liquid bidirectionally flowable between a position that establishes electrical connection between electrodes and a position that opens electrical connection between the electrodes. High pressure gas biases the liquid to a position that establishes electrical connection between the electrodes, and yieldably resists movement of the liquid toward the position that opens electrical connection between the electrodes. Current through the switch electrodes produces a magnetic force that acts on the liquid and urges it toward the position that opens electrical connection between the electrodes. Switching action occurs upon a predetermined magnitude of current being attained.