Abstract: Electrowinning methods and apparatus are suitable for producing elemental deposits of high quality, purity, and volume. Respective cathodes are used during electrowinning for bearing the elemental product, segregating impurities, dissolving morphologically undesirable material, and augmenting productivity. Silicon suitable for use in photovoltaic devices may be electrodeposited in solid form from silicon dioxide dissolved in a molten salt.

Abstract: Electrowinning methods and apparatus are suitable for producing elemental deposits of high quality, purity, and volume. Respective cathodes are used during electrowinning for bearing the elemental product, segregating impurities, dissolving morphologically undesirable material, and augmenting productivity. Silicon suitable for use in photovoltaic devices may be electrodeposited in solid form from silicon dioxide dissolved in a molten salt.

Abstract: Disclosed is a novel method for producing high-purity silicon at low cost. Particularly disclosed is a novel method for producing high-purity silicon, which can be suitably used as a raw material for solar cells, at low cost.

Abstract: A new method to synthesize crystalline films, superlattices and multilayered devices based on metallic or semiconductor compounds or alloys in electrolyte media on non-crystalline substrates. An automated sequence of flow, equilibration and underpotential electrodeposition from a single electrolyte comprising the film constituents leads to the synthesis of stoichiometric, epitaxial layers. The invention process is based on a new concept of electrochemical molecular layer epitaxy; it provides a relatively simple, fast and inexpensive method to fabricate a wide range of high quality technological materials, ranging from large-area single phase films to multiple quantum-well structures.

Abstract: In electroplating a metal layer on a semiconductor wafer, the resistive voltage drop between the edge of the wafer, where the electrical terminal is located, and center of the wafer causes the plating rate to be greater at the edge than at the center. As a result of this so-called "terminal effect", the plated layer tends to be concave. This problem is overcome by first setting the current at a relatively low level until the plated layer is sufficiently thick that the resistive drop is negligible, and then increasing the current to improve the plating rate. Alternatively, the portion of the layer produced at the higher current can be made slightly convex to compensate for the concave shape of the portion of the layer produced at the lower current. This is done by reducing the mass transfer of the electroplating solution near the edge of the wafer to the point that the electroplating process is mass transfer limited in that region.

Abstract: The reliability of Cu and Cu alloy interconnects is significantly enhanced by controlling the temperature of the electroplating solution during via opening filling to substantially prevent occlusion of the opening. Embodiments of the present invention include electroplating Cu or a Cu alloy from an electroplating solution at a temperature of about 20.degree. C. or less.

Abstract: According to aspect of the invention, a plating system is provided which includes a tank for containing a plating solution, a shaft extending into the tank, and a substrate holder mounted to the shaft. The shaft and the tank are rotatable relative to one another. The substrate holder is configured to support a substrate in position so that at least a first face of the substrate is exposed to the plating solution in the tank.

Abstract: The invention relates to an element, and a method for making the element, of a photovoltaic solar cell with an elongated, rod-like, wire-like, thread-like, or band-like electrode, which is provided on its surface with at least one photovoltaically active coating and is characterized in that the electrode consists of an electrically conductive material, in particular of impure silicon having a poly-crystalline, or a mono-crystalline structure and the coating consists of a mono-crystalline or poly-crystalline photovoltaically active material on the surface of the electrode, said material preferably being silicon having a certain doping (p- or n-doping), which, for instance, is applied continuously by means of a drawing plate or die.

Abstract: High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

Abstract: High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

Abstract: An array of electrodes for use in a flat panel display includes a plurality of electron emitters formed of polycrystalline or single crystalline silicon which has been selectively etched to form pores in the emitters. The electrode array is then electroplated in a methane plasma to deposit a carbon compound such as silicon carbide on the surfaces of the emitters and in the pores of the emitters. Each emitter has a generally flat electron emitting surface which facilitates a longer life for the electrode array, the porous structure of the emitters increasing the electron emission efficiency of the emitters in relatively low electric fields. The electrode array can be integral with a support substrate by anisotropically etching the substrate to form the emitters. A layered interconnect structure can be formed on a surface of the silicon substrate for providing the interconnect structure for the electrode array.

Abstract: Improved electrolytic deposition of semiconductors is obtained by separating the anode from the cathode by an ion-exchange membrane. The process is useful in the deposition of IIB/VIB semiconductors in the fabrication of photovoltaic cells.

Abstract: A method to electrochemically deposit semiconductors and for the electrochemical formation of epitaxial thin-film, single-crystalline compound semiconductors comprising alternating electrodeposition of atomic layers of selected pairs of elements using underpotential deposition.

Abstract: A photovoltaic energy conversion device and methods for forming the same with relatively high efficiency, high stability, low cost, low weight, and low toxicity. The device comprises a thin film n/p or n/i/p type, gradient-doped heterojunction which uses compatible, lattice-matched, non-hazardous semiconducting compounds from the I-III-VI.sub.2 (14), I-III-VI-VII (15) and I-VI.sub.3 -VII (16) series, an ohmic contact (13) to the n-layer comprising a group III metal, a transparent ohmic contact (17) to the p-layer, a grid (18), and an antireflection coating (20).

Abstract: A method of producing an absorber layer for solar cells by electrolytic dispersion deposition.

Abstract: A thin film semiconductor device comprising a semiconductor layer and an electrically conductive thin film which are formed by an alternate current plating method, and a process for producing thereof.