Abstract: A ramekin dispenser including a platform that may be attachable to a commercial kitchen refrigerator and a ramekin holder removably attachable to the platform. The platform may include a base that stops ramekins from falling out of the ramekin holder and that facilitates removal of one ramekin at a time from a dispensing slot. The platform may be removably or permanently attachable to the commercial kitchen refrigerator. The ramekin holder may be removably attachable to the platform via a keyhole and pin arrangement. The ramekin holder may have a cylindrical or some other shape, possibly with a slot on one side. The platform and the ramekin holder may be made of plastic, wood, metal, or any other suitable material. Also, similarly configured dispensers for other items.

Abstract: A process for filling recessed features of a dielectric substrate for a semiconductor device, comprises the steps (a) providing a dielectric substrate having a recessed feature in a surface thereof, wherein the smallest dimension (width) across said feature is less than ?200 nm, a conductive layer being present on at least a portion of said surface, (b) filling said recessed feature with a conductive material, and (c) prior to filling said recessed feature with said conductive material, treating said surface with an accelerator.

Abstract: The object of the present invention is a method and compositions for direct copper plating and filling to form interconnects in the fabrication of semiconductor devices. According to the invention, this method comprises: providing an electrolytic copper bath containing, in solution in a solvent, a source of copper ions with a concentration of between 45 and 200 mM, preferably of between 45 and 100 mM and at least one copper complexing agent which is an aliphatic polyamine having 2 to 4 amine functions with a concentration of between 30 and 200 mM, preferably of between 60 and 200 mM; the copper/complexing agent(s) molar ratio being of between 0.2 and 2, preferably between 0.3 and 1.5; bringing said copper diffusion barrier layer of said substrate into contact with said electrolytic copper bath, applying an electrical bias to the substrate for a duration adjusted according to the thickness of copper to be electroplated, removing the substrate from said electrolytic copper bath.