Abstract: Various embodiments relate to an electrochromic (EC) device that is structured with surface contour features arranged according to a randomized pattern. For example, one or more conductive layers of an EC device may be structured with such surface ablations. In some embodiments, the randomized ablation pattern may comprise a randomized variation in one or more geometrical characteristics of a group of segments. In some examples, the geometrical characteristic(s) may include a distance characteristic, an orientation characteristic, and/or a shape characteristic, etc. According to various embodiments, the randomized ablation pattern may be configured to reduce diffraction and/or scatter of light incident on the surface ablations as compared to some other ablation patterns.

Abstract: Provided is a method of manufacturing a display device that includes a structure formed so as to protrude at least in a normal direction of a first substrate, and an electrode formed in a side wall surface of the structure, the method including: forming a transparent conductive film for the electrode; forming a low-affinity material having a low affinity for a resist film on an upper surface of the transparent conductive film formed in a head surface of the structure; forming a resist film by applying a liquid resist material to an upper layer of the transparent conductive film and then fixing the resist material; forming an opening that exposes the transparent conductive film in the resist film by removing the low-affinity material; etching the transparent conductive film which is a lower layer using the resist film as a protective film; and removing the resist film.

Abstract: An etching composition and a method of manufacturing a display substrate using the etching composition are disclosed. The etching composition includes phosphoric acid (H3PO4) of about 40% by weight to about 70% by weight, nitric acid (HNO3) of about 5% by weight to about 15% by weight, acetic acid (CH3COOH) of about 5% by weight to about 20% by weight, and a remainder of water. Thus, a metal layer including copper may be stably etched.

Abstract: A method and system for integrated circuit fabrication is disclosed. In an example, the method includes determining a first process parameter of a wafer and a second process parameter of the wafer, the first process parameter and the second process parameter corresponding to different wafer characteristics; determining a variation of a device parameter of the wafer based on the first process parameter and the second process parameter; constructing a model for the device parameter as a function of the first process parameter and the second process parameter based on the determined variation of the device parameter of the wafer; and performing a fabrication process based on the model.

Abstract: A method is provided, of manufacturing a material to be etched that can more preferably prevent a region to be etched from remaining as an un-etched region and reduce deviation of etched/un-etched regions. Patterning (a method of manufacturing a material to be etched) of a substrate 100, which is manufactured by performing etching through an opened region 10 by an etching mask M1, is performed by a first etching process and a second etching process that is performed after the first etching process. The second etching process is a process for etching a region including a region that is not etched by the first etching process. An un-etched region, which is the same as etched using a virtual etching mask M1?, is formed on the surface of an object to be etched by the first and second etching processes.

Abstract: A two step etch is used to provide access to the front electrode of an EL panel cut from a larger EL panel. The two step etch produces a set back that electrically isolates the front electrode and enables a conductive layer to be easily deposited on the front electrode. A kit contains the necessary materials and instructions for practicing the method.

Abstract: A composition for removing a conductive material and a manufacturing method of an array substrate using the composition, wherein the composition may include a nitric acid of about 3 to 15 wt %, a phosphoric acid of about 40 to 70 wt %, an acetic acid of about 5 to 35 wt %. The composition may further include a chlorine compound of about 0.05 to 5 wt %, a chlorine stabilizer of about 0.01 to 5 wt %, a pH stabilizer of about 0.01 to 5 wt %, and water of residual quantity.

Abstract: A method of manufacturing a light emitting device including a light emitting element is provided, which includes a step of forming a first electrode, a step of forming an insulating layer including an opening over the first electrode, a step of forming a layer containing an organic compound on the first electrode and the insulating layer, a step of forming a second electrode on the layer containing the organic compound, a step of etching the layer containing the organic compound by plasma etching, and a step of connecting the second electrode and a wiring electrically connected to a terminal portion to each other through an adhesive containing a conductive particle.

Abstract: A method for manufacturing a semiconductor device deposits a plurality of bottom antireflective coating films to prevent a standing wave caused by a light source of a short wavelength in forming a fine pattern. The method includes forming a pattern formation layer on an entire surface of a wafer, forming two or more bottom antireflective coating films on the pattern formation layer, forming a photoresist film pattern on a predetermined region of the bottom antireflective coating films, etching the bottom antireflective coating films using the photoresist film pattern as a mask, forming sidewall spacers at sides of the photoresist film pattern, and etching the pattern formation layer using the sidewall spacers and the photoresist film pattern as masks.

Abstract: An etchant composition, and methods of patterning a conductive layer and manufacturing a flat panel display device using the same are provided. The etchant composition may include phosphoric acid, nitric acid, acetic acid, water and an additive, wherein the additive includes a chlorine-based compound, a nitrate-based compound, and an oxidation regulator. In addition, the flat panel display device may be manufactured by patterning a gate electrode, source/drain electrodes and a pixel electrode using the same etchant composition. The gate electrode, source/drain electrodes and the pixel electrode may be formed of different conductive materials. Accordingly, processes are simplified so that manufacturing costs may be reduced and productivity may be improved.

Abstract: An optical interference display panel is disclosed that has a substrate, an optical interference reflection structure, and an opaque protection structure. The optical interference reflection structure has many color-changeable pixels and is formed on the substrate. The opaque protection structure is adhered and fixed onto the substrate with an adhesive and encloses the optical interference reflection structure between the substrate and the opaque protection structure. The opaque protection structure blocks and/or absorbs light, and light is thus not emitted outward by passing through defects in the optical interference reflection structure. Moreover, the opaque protection structure and the adhesive also prevent the optical interference reflection structure from being damaged by an external environment.

Abstract: A method for fabricating an optical interference display cell is described. A first electrode and a sacrificial layer are sequentially formed on a transparent substrate and at least two openings are formed in the first electrode and the sacrificial layer to define a position of the optical interference display cell. An insulated heat-resistant inorganic supporter is formed in each of the openings. A second electrode is formed on the sacrificial layer and the supporters. Finally, a remote plasma etching process is used for removing the sacrificial layer.

Abstract: The use of a mixture comprising reactive oxygen species and reactive fluorine and/or chlorine species in the production of an organic light-emissive device, comprising an organic light emissive region provided between two electrodes such that charge carriers can move between the electrodes and the organic light emissive region, for etching the organic light-emissive region.

Abstract: An easier method is provided to manufacture a light emitting device that can display a full-color image using a polymeric organic compound. In the present invention, some of polymeric organic compounds are dissolved in a protic solvent while the others are dissolved in an aprotic solvent and the obtained solutions are applied to form organic compound films having laminate structures. A conductive film to serve as an etching stopper is formed on the organic compound films, so that portions of the organic compound films that do not overlap the conductive film are etched away. By using wet etching and dry etching in combination, different organic compound films each composed of a plurality of polymeric organic compounds can be formed in different light emitting elements on the same substrate.

Abstract: Electrically conductive film, used for electroluminescent displays and electroplated films, treated by printing with ink on the surface of the film, the ink causing activation of the film wherever printing occurs.

Abstract: A thin film formation method in accordance with the present invention forms banks (110) where affinity bank layers and non-affinity bank layers are alternately layered by repeating a step of forming an affinity bank layer (111-11n) with a material having affinity for a thin film material solution (130) (such inorganic material as SiO2) and a step of forming a non-affinity bank layer (121-12n) with a material having non-affinity for the thin film material solution (130) (such organic material as resist) one or more times. Finally the thin film material solution (130) is filled between banks by an ink jet method, heat treatment is executed, and a thin film layer (131-13n) is sequentially layered. By these steps, cost required for affinity control can be decreased and forming multi-layer thin films with uniform film thickness becomes possible.

Abstract: A color wheel including a disk-shaped substrate made of a light-transmittable medium and a plurality of filters arranged on the substrate is fabricated. Each filter is capable of selectively transmitting rays of light having a desired wavelength. The method of fabricating the color wheel including the steps of forming at least one of a plurality of adjoining selective color-transmittable films as the filters each at a predetermined area on a front side of the disk-shaped substrate, and utilizing, as a mask for exposure from a back side of the disk-shaped substrate, a portion containing at least one of two borders with which each one of the plurality of adjoining selective color-transmittable films is defined.

Abstract: An EL element including a first electrode, a luminescent layer, an insulation layer, and a second electrode is laminated so that a short circuit between the first electrode and the second electrode at a defect of the insulation layer between the luminescent layer and the second electrode is prevented. A cavity 41 is formed in the layer 4 under an area 51 at which the second insulation layer 5 is missing. The second electrode 6 is separated by the cavity 41 from the first insulation layer 3 located under the luminescent layer 4 to prevent a short circuit.

Abstract: An organic electroluminescent display apparatus and method for manufacturing same is disclosed; the method prevents the anode and the cathode from defects and short circuit, and with the suitable geometry of the electrical insulation ramparts, the mechanical properties of the cathode insulating ramparts are increased such that the adhesion between the cathode insulating ramparts and the substrate is enhanced.

Abstract: An etchant for patterning indium tin oxide, wherein the etchant is a mixed solution of HCl, CH3COOH, and water, and a method of fabricating a liquid crystal display device are disclosed in the present invention. The method includes forming a gate electrode on a substrate, forming a gate insulating layer and an amorphous silicon layer on the gate electrode including the substrate, forming an active area by patterning the amorphous silicon layer, forming a source electrode and a drain electrode on the active area, forming a passivation layer on the source electrode and the drain electrode and the gate insulating layer, forming a contact hole exposing a part of the drain electrode, forming an indium tin oxide layer on the passivation layer, and forming an indium tin oxide electrode by selectively etching the indium tin oxide layer using a mixed solution of HCl, CH3COOH, and water as an etchant.

Abstract: Provided is a method of etching an etch layer using a polycarbonate layer as a mask. The method includes placing an etch structure in a reaction chamber, the etch structure including an etch layer underlying a polycarbonate layer, the polycarbonate layer having apertures. The etch layer is then etched using a low-pressure high density plasma generate at a pressure in the range of approximately 1 to 30 millitorr where the ionized particle concentration is at least 1011 ions/cm3 and where the ionized particle concentration is substantially equal throughout the volume of the reaction chamber. To increase the etch rate, the etch structure can be cooled or biased. To decrease the etch rate, an inert gas can be added to the process gas mixture used to form the plasma.

Abstract: A method for manufacturing a piezoelectric element is disclosed. The method includes the steps of forming a lower electrode over a substrate, forming a piezoelectric luminous film over the lower electrode, forming an upper electrode over the piezoelectric film, forming a pressure luminous layer for emitting light upon application of pressure on the upper electrode, and attaching a substrate to the pressure luminous layer—has been inserted as a new abstract.

Abstract: A nitride semiconductor light emitting device having preferable light emitting characteristics even if dense threading dislocations extend through single crystal layers. The nitride semiconductor light emitting device includes an active layer obtained by depositing group-3 nitride semiconductors, and a barrier layer disposed adjacent to the active layer and having a greater bandgap than that of the active layer, the active layer having barrier portions which surround the threading dislocations and are defined by interfaces enclosing the threading dislocation and which are made of the same material as that of the barrier layer.

Abstract: A method for manufacturing low cost electroluminescent (EL) illuminated membrane switches is disclosed. The method includes the first step of die cutting, embossing or chemically etching the metal foil surface of a metal foil bonded, light transmitting flexible electrical insulation to simultaneously form one or more front capacitive electrodes, membrane switch contacts and electrical shunt, electrical distribution means and electrical terminations that together comprise a flexible printed circuit panel. This continuous flexible printed circuit substrate is then coupled to a precisely positioned indexing system. Next, the front metal foil capacitive electrodes are coated with a light transmissive electrically conductive layer.

Abstract: A method of forming emitter tips for use in a field emission array is disclosed. The tips are formed by utilizing a polymer residue that forms during the dry etch sharpening step to hold the mask caps in place on the emitter tips. The residue polymer continues to support the mask caps as the tips are over-etched, enabling the tips to be etched past sharp without losing their shape and sharpness. The dry etch utilizes an etchant comprised of fluorine and chlorine gases. The mask caps and residue polymer are easily removed after etching by washing the wafers in a wash of deionized water, or Buffered Oxide Etch.

Abstract: The invention is for a process for manufacturing a liquid crystal display element for use in a color display using resist materials. The process comprises forming a transparent conductive film on one side of a transparent substrate; patterning the transparent conductive film by coating with a colored positive resist followed by exposure and development, coating a black-colored negative resist onto the transparent film; forming black stripes by subjecting the negative resist to exposure from the back side of the transparent substrate and development of the negative resist.

Abstract: Etching method applicable to a semiconductor device fabrication and an MEMS(Micro-Electro-Mechanical System) process, including the steps of forming an etching mask on a substrate, forming a plurality of patterns in the etching mask corresponding to depths of the plurality of trenches; and etching the substrate using the etching mask having the plurality of patterns formed therein, whereby eliminating an alignment error in respective photolithography, that permits to form a precise structure, simplify a fabrication process, and reduce a production cost.

Abstract: Provided is a method of etching an etch layer using a polycarbonate layer as a mask. The method includes placing an etch structure in a reaction chamber, the etch structure including an etch layer underlying a polycarbonate layer, the polycarbonate layer having apertures. The etch layer is then etched using a low pressure-high density plasma generate at a pressure in the range of approximately 1 to 30 millitorr where the ionized particle concentration is at least 10.sup.11 ions/cm.sup.3 and where the ionized particle concentration is substantially equal throughout the volume of the reaction chamber. To increase the etch rate, the etch structure can be heated or biased. To decrease the etch rate, an inert gas can be added to the process gas mixture used to form the plasma.

Abstract: A plasma display panel is disclosed including: a transparent insulating substrate; a plurality of transparent electrodes in a strip arrangement with each electrode having a groove that runs along the median of its surface and has a predetermined width and depth at its center, and side walls on both sides of the groove, the side walls serving as barrier ribs; a fluorescent layer formed in each groove; and a plurality of electrodes in strip arrangement having a predetermined distance between one another and perpendicular to the transparent electrodes, the electrodes being supported by supporting means formed on a predetermined portion of barrier rib located on the edge portion of the substrate.

Abstract: A dry etching method performing dry etching of a material containing zinc forms and patterns a resist on the material to be etched, and etches the material using an etching gas which is a mixed gas of methane gas and an inert gas. A dry etching method that dry etches a material containing zinc etches the material using an etching gas that consists only of methane gas, an inert gas, and hydrogen gas alone. Another dry etching method that dry etches a material containing zinc introduces an etching gas that contains methane gas, an inert gas, and hydrogen gas into a dry etching device, in which the flow rate of the hydrogen gas is set such that it is equal to or greater than the value at which the amount of dissociated hydrogen becomes saturated, and etches the material using the etching gas.

Abstract: A dichroic filter array is mounted on a wafer by combining microelectronic and microlithography techniques. A release layer of copper is evaporated onto a wafer, and the release layer is coated with a photoresist. The assembly is masked, and the unmasked photoresist, after exposure to ultraviolet light, is developed to expose a predetermined section of the release layer. That section of release layer is then overetched to create an undercut in its walls and to expose the underlying wafer. Dichroic filter material is then deposited onto the wafer by a cold process, and the release layer is then removed, leaving only the dichroic filter material on the wafer. The process is repeated to create an array.

Abstract: A method for manufacturing a color liquid crystal display device is available where light-blocking layers are provided for the color filter stripes on a pixel-by-pixel basis by inserting the light-blocking layers between stripes of transparent conductive films that are already striped as scanning electrodes. The manufacturing method is characterized by the steps of the formation of a transparent conductive film on a first transparent substrate, patterning of the transparent conductive film by coating the transparent conductive film with a colored, positive resist, exposure and development, coating of patterned transparent conductive films with a blackened, negative resist, formation of black stripes of the negative resist between the patterned transparent conductive films by performing back exposure through the first transparent substrate and development, and the removing the positive resist remaining on the patterned transparent conductive films.

Abstract: A color electroluminescence(EL) display element and the manufacturing method thereof which can improve an RC-time delay phenomenon and the contrast of the EL display element. According to the EL display element, an auxiliary metal electrode is formed on a transparent electrode. The auxiliary metal electrode is formed by forming on the transparent electrode a metal film having a high melting point and a low resistivity, such as molybdenenum, with a thickness of about 1000 .ANG., and then by selectively etching the metal film so that it remains on the boundary between each of R, G, and B color filters with a width of about 5 to 30 .mu.m. The color filters are formed on a circular polarizing plate and sealed up with the auxiliary metal electrode, and thus the circular polarizing plate absorbs an external light incident to and reflected from a metal electrode.

Abstract: An electrophoretic display has a grid cathode matrix arrangement consisting of a first plurality of parallel conductive lines insulated from a second plurality of parallel conductive lines transverse to said first plurality. Located with respect to the grid and cathode lines are first and second anode structures. The first anode is remote from the second with the second anode overlying the gird lines of the display and insulated therefrom. The second anode is biased to implement typical HOLD and ERASE modes independent of the first anode.