Abstract: A method for preparing a semiconductor device includes providing an integrated circuit die having a bond pad. The bond pad includes aluminum (Al). The method also includes etching a top portion of the bond pad to form a recess, and bonding a wire bond to the recess in the bond pad. The wire bond includes copper (Cu).

Abstract: The present disclosure can provide for an ultrasonic welding method for a pair of workpieces. The method can include first pressing an ultrasonic welding stack against a first workpiece in the pair so that the first workpiece comes into contact with a second workpiece in the pair. The method can then provide for initiating a weld phase by outputting energy from the ultrasonic welding stack to the first workpiece. The method can provide for monitoring, with at least one sensor, a sensed parameter. The sensed parameter can be, for example, weld force and/or weld force rate of change. The method can provide for determining whether the sensed parameter has reached a predetermined level. Based on determining that the sensed parameter has reached the predetermined level, the method can provide for ending the weld phase.

Abstract: An ultrasonic welding device includes a sonotrode with a sonotrode surface, a lateral slide with a lateral slide surface, a touching element with a touching surface and an insertion chamber for inserting joining parts. The insertion chamber is defined in a first axial direction (y) on a first side by the sonotrode surface and in a second axial direction (x) on a second side by the lateral slide surface and on a third side opposing the second side by the touching surface. Furthermore, the ultrasonic welding device includes a first receiving element with a first stop edge and a second receiving element with a second stop edge. The first receiving element and the second receiving element are arranged to be movable in relation to each other between a starting position and an end position.

Abstract: An ultrasonic joining horn disclosed herein can generate ultrasonic vibration in a predetermined vibration direction and includes a base portion, a stand portion that rises from an upper surface of the base portion, and a pressure contact portion formed of a plurality of protrusions that protrude from an upper surface of the stand portion. Each of the protrusions is formed into a pyramid shape or a truncated pyramid shape, the protrusions are arrayed, and when viewed from top, at least a portion of a peripheral edge of a portion in which the protrusions are arrayed has a zigzag shape. The zigzag portion is formed along at least one of the vibration direction and a perpendicular direction to the vibration direction. The upper surface of the base portion has an exposed surface on which the stand portion is not formed.

Abstract: An ultrasonic welding device includes a sonotrode, an anvil, a touching element, a lateral slide, a first stop element, a drive device, and a receiving chamber in which joining partners are to be received. The receiving chamber is defined on a first side by a surface of the sonotrode and on a second side opposing the first side by a surface of the anvil. The receiving chamber is further defined on a third side by a surface of the touching element and on a fourth side opposing the third side by a surface of the lateral slide. The first stop element is displaceable between a pulled-in position and a pulled-out position. The first stop element in the pulled-in position defines the receiving chamber on a fifth side extending transverse to the first to fourth sides and in the pulled-out position leaves the receiving chamber open on the fifth side.

Abstract: A sonotrode assembly for an ultrasonic welding device. The sonotrode assembly includes a oscillator assembly and a cooling device. The cooling device includes at least one cooling body. The cooling body is held supported in the cooling device in such a manner that the cooling body is reversibly displaceable between an abutting position in which a contact surface of the cooling body abuts on a contact surface of the oscillator assembly and a spaced position in which the contact surface of the cooling body is spaced apart from the contact surface of the oscillator assembly.

Abstract: A stacked semiconductor device and systems and methods for producing the same are disclosed here. In some embodiments, the method includes aligning a first array of bond pads on an upper surface of a first semiconductor substrate with a second array of bond pads on a lower surface of a second semiconductor substrate. The method then includes annealing the stacked semiconductor device to bond the upper surface of the first semiconductor substrate to the lower surface of the second semiconductor substrate. The annealing results in at least one void between the upper surface and the lower surface that includes a layer of diffused metal. The layer of diffused metal extends from a first individual bond pad towards a second individual bond pad and forms an electrical or thermal short. The method then includes exposing the stacked semiconductor device to microwave radiation to excite a chemical constituent present in the void.

Abstract: A semiconductor package structure includes a substrate, a die and a conductive structure. The die is disposed on or within the substrate. The die has a first surface facing away from the substrate and includes a sensing region and a pad at the first surface of the die. The first surface of the die has a first edge and a second edge opposite to the first edge. The sensing region is disposed adjacent to the first edge. The pad is disposed away from the first edge. The conductive structure electrically connects the pad and the substrate. The sensing region has a first end distal to the first edge of the first surface of the die. A distance from the first end of the sensing region to a center of the pad is equal to or greater than a distance from the first end of the sensing region to the first edge of the first surface of the die.

Abstract: Prior to manufacturing a product by additive manufacturing, a stress relief profile including frequency and amplitude parameters of an ultrasonic input is determined based on physical properties of the product, including resonant frequencies of the product and a material from which the product is manufactured. Successive layers of a material are added and energy is applied to incorporate the material of each layer into the product. A processor accesses stress relief profile parameters for each layer, determines whether a layer requires stress relief and determines a frequency and a power level for the stress relief at the layer. An ultrasonic input is applied with the determined parameters to relieve stress as the product is built up.

Abstract: According to an embodiment of the present disclosure, there is provided a completely new type of 3-dimensional (3D) printing method for producing an object by focusing ultrasound onto material that changes in state by stimulation to solidify it into a desired shape. The method for 3D printing according to an embodiment includes providing material which changes in state by stimulation, setting a target focal point in the material, focusing ultrasound onto the target focal point using at least one ultrasound transducer, and applying stimulation to the material using the focused ultrasound to induce a change in state of the material. According to the embodiments, it is possible to control the precision of the output by controlling the frequency of the ultrasound transducer or the size of the target focal point on system.

Abstract: A motor, a cooling device, and a cooling method are disclosed. The cooling device is mounted on a stator of the motor. The cooling device includes a sleeve and a spiral duct. A wall of the sleeve has a spiral groove extending along the sleeve. The sleeve is sleeved onto the stator. The spiral duct is mounted in the spiral groove. The spiral duct has a first spiral form corresponding to the spiral groove, so that the spiral duct is correspondingly installed in the spiral groove. The spiral duct has a second spiral form extending along the spiral duct. A twisted spiral cooling channel is formed along the spiral pathway. A cooling fluid flowing through the twisted spiral cooling channel is subjected to the continuously changing cross-section of the twisted spiral cooling channel to enhance the swirl intensity, thereby improving the convection heat transfer effectiveness.

Abstract: An ultrasound horn is provided which vibrates a bonding tool, attached at a tip, in a plurality of directions with a simple structure. There is provided an ultrasound horn having: a longitudinal vibration generator; a horn portion; and a torsional vibration generator. The torsional vibration generator includes a body including a polygonal pillar portion, second layered elements in which a plurality of second piezoelectric elements are layered, and which are attached to side surfaces of the polygonal pillar portion, weights, and a pressure application ring which applies a pressure by pressing the second piezoelectric elements against the polygonal pillar portion via the weights.

Abstract: An integrated circuit device may include a multi-material toothed bond pad including (a) an array of vertically-extending teeth formed from a first material, e.g., aluminum, and (b) a fill material, e.g., silver, at least partially filling voids between the array of teeth. The teeth may be formed by depositing and etching aluminum or other suitable material, and the fill material may be deposited over the array of teeth and extending down into the voids between the teeth, and etched to expose top surfaces of the teeth. The array of teeth may collectively define an abrasive structure. The multi-material toothed bond pad may be bonded to another bond pad, e.g., using an ultrasonic or thermosonic bonding process, during which the abrasive teeth may abrade, break, or remove unwanted native oxide layers formed on the respective bond pad surfaces, to thereby create a direct and/or eutectic bonding between the bond pads.

Abstract: A method of manufacturing a fluidic device includes molding either one of the base member and the valve part with a first mold; and molding the other one of the base member and the valve part with a second mold with respect to the molded base member or the molded valve part.

Abstract: An embodiment relates to an ultrasonic additive manufacturing process, comprising joining a foil comprising a bulk metallic glass to a substrate; and forming a cladded composite comprising the foil and the substrate; wherein a thickness of the cladded composite is greater than a critical casting thickness of the bulk metallic glass, wherein the cladded composite comprises a cladding layer of the bulk metallic glass on the substrate and the bulk metallic glass comprises approximately 0% crystallinity, approximately 0% porosity, less than 50 MPa thermal stress, approximately 0% distortion, approximately 0 inch heat affected zone, approximately 0% dilution, and a strength of about 2,000-3,500 MPa.

Abstract: A wire bonding method includes bonding a tip of a wire provided through a clamp and a capillary onto a bonding pad of a chip, moving the capillary to a connection pad of a substrate corresponding to the bonding pad, bonding the wire to the connection pad to form a bonding wire connecting the bonding pad to the connection pad, before the capillary is raised from the connection pad, applying a electrical signal to the wire to detect whether the wire and the connection pad are in contact with each other, changing a state of the clamp to a closed state when the wire is not in contact with the connection pad and maintaining the state of the clamp in an open state when the wire is in contact with the connection pad, and raising the capillary from the connection pad while maintaining the state of the clamp.

Abstract: The invention relates to a sonotrode (218) of an ultrasonic welding device with a sonotrode body (224) with sonotrode head (220) with at least one working surface (230) extending in the longitudinal direction of the sonotrode head for welding or welding together and/or deforming and/or cutting at least one item of metallic welding material, wherein the sonotrode head has cross-sections which vary along the working surface in such a way that the cross-section of the sonotrode head in the end region of the working surface extending at the end face is greater than in the middle region of the working surface.

Abstract: The invention relates to an ultrasonic metal welding device and a method for welding electrical conductors using a compression chamber that is adjustable at least in height and that is delimited on opposite sides by a section of a sonotrode as a first delimiting surface and by at least one section of a counter electrode (156) as a second delimiting surface, wherein for welding, the counter electrode and the sonotrode are displaced relative to one another. The counter electrode used is one that comprises sections (152, 154) of geometrically different working surfaces or is composed of at least two sections that are displaceable relative to one another.

Abstract: An ultrasonic bonding apparatus includes a stage having an upper surface on a plane defined by a first direction and a second direction crossing the first direction, a head part spaced apart from the stage in a third direction crossing the first direction and the second direction, a first ultrasonic generator which vibrates in a direction parallel to the first direction, and a second ultrasonic generator which vibrates in a direction parallel to the third direction, where each of the first ultrasonic generator and the second ultrasonic generator may be coupled to the stage or the head part.

Abstract: The present disclosure relates to an electric wire connection structure including one or more copper-based conductor covered electric wires having a copper-based conductor covered part and exposed part; and one or more aluminum-based conductor covered electric wires having an aluminum-based conductor covered part and exposed part. An ultrasonic joint part is provided at a conductor stacked part in which the copper-based conductor exposed part and the aluminum-based conductor exposed part are superposed. A total contacting length L which is a summed length of a part at which the copper-based conductor exposed part and the aluminum-based conductor exposed part contact and a summed length x of a contour line of a space S formed at a part at which the copper-based conductor exposed part and the aluminum-based conductor exposed part are separate in a joint interface of the ultrasonic joint part satisfy a relational expression of (x/L)×100?10% based on cross-section observation.

Abstract: A cell structure for a secondary battery includes an electrode assembly including a plurality of electrodes, a plurality of electrode tabs extending from the electrodes to an outside of the electrode assembly, and a plurality of lead tabs electrically connected to the electrode tabs and contacting the electrode assembly. In the cell structure, a part of each of the lead tabs is folded, and the electrode tabs are inserted into the folded part of each of the lead tabs.

Abstract: An ultrasonic welding system is provided. The ultrasonic welding system includes a support structure for supporting a workpiece. The ultrasonic welding system also includes a weld head assembly including an ultrasonic converter carrying a sonotrode. The weld head assembly is moveable along a plurality of substantially horizontal axes. The sonotrode is configured to operate during a welding operation at a bond force of between 5-500 kg, and with a sonotrode tip motion amplitude of between 5-150 microns.

Abstract: The present disclosure generally relates to methods and apparatuses for additive manufacturing using foil-based build materials. Such methods and apparatuses eliminate several drawbacks of conventional powder-based methods, including powder handling, recoater jams, and health risks. In addition, the present disclosure provides methods and apparatuses for compensation of in-process warping of build plates and foil-based build materials, in-process monitoring, and closed loop control.

Abstract: A device for welding rod-shaped electrical conductors and a sonotrode for such includes a compression space for receiving two connection regions of the conductors to be connected, said connection regions extending in a first axial direction (x-axis), the compression space being defined by a working surface of a sonotrode, which transmits ultrasonic vibrations, and a counterface of an anvil at two opposite sides in a second axial direction (z-axis) and by a boundary surface of a slider element, displaceable in the second axial direction (z-axis), and a boundary surface of a boundary element on two opposite sides in a third axial direction (y-axis). In a special contact zone, which is a section of the working surface of the sonotrode and serves to subject at least one connection region to ultrasonic vibrations, the working surface has a surface configuration that differs from a contact zone formed by the remaining working surface.

Abstract: Disclosed are a joint of a copper terminal and an aluminium conductor and an ultrasonic welding method thereof. One spacing metal layer is added between the copper terminal and the aluminium conductor, and firstly, the spacing metal layer is fixed at a welding end of a base material by means of a manner such as electroplating, pressure welding, electric arc spray welding or electromagnetic welding, and the three parts are then welded together by means of an ultrasonic welding manner. The welding method is suitable for the welding of various joints, the electrochemical corrosion resulting from the potential difference between the copper and aluminium electrodes can be effectively reduced, and the mechanical properties of the joint can be improved.

Abstract: To provide a wire bonding apparatus, which is insusceptible to a bonding state at a second bonding point due to a wire cut error or the like, or to members such as a capillary and a wire, and is capable of automatically protruding the wire from a leading end of the capillary, provided is a wire bonding apparatus including: a capillary (6) having a through hole through which a wire (40) is to be inserted; a holding unit, which is provided above the capillary (6), and is configured to hold the wire (40) inserted through the capillary (6); and a vibrating unit configured to vertically vibrate the capillary (6). Under a state in which the holding unit holds the wire (40), the vibrating unit vertically vibrates the capillary (6) so that the wire (40) is protruded from the leading end of the capillary.

Abstract: A conductor connection device for joining a plurality of conductors with ultrasonic welding, the conductor connection device comprising: a horn including a contact surface that is brought into contact with the conductors, the horn being configured to be ultrasonically vibrated; a pair of restricting portions configured to be brought into contact with the contact surface and to be relatively movable along the contact surface; and an anvil that is relatively moved toward and away from the contact surface, the horn and the pair of restricting portions being moved relative to the anvil to sandwich the anvil between the pair of restricting portions facing each other, and at least one of the pair of restricting portions being moved toward the other.

Abstract: Ultrasonic filament modeling systems and methods may be utilized to achieve room-temperature 3-D printing of solid (>95%) metal materials. A vibrating tool is applied to a metal filament to form a voxel, inducing mechanical deformation as well as inter-and intra-layer mass transport. Desired structures may be built on a voxel-by-voxel basis. Additionally, by varying the applied ultrasonic energy, the microstructure of the resulting structure may be controlled.

Abstract: An apparatus configured to calibrate a wafer bonding apparatus includes a stage, a linear moving pin, a detector, and a data processing unit. The stage is configured to hold a wafer thereon, and the wafer includes a predetermined mark thereon. The linear moving pin is configured to push the wafer away from the stage. The detector is configured to detect a position of the predetermined mark when the linear moving pin applies a force to the wafer. The data processing unit receives information on the position of the predetermined mark from the detector and information on a corresponding force applied to the wafer by the linear moving pin, where the data processing unit is configured to compare the information with calibration information.

Abstract: A wire bonding method includes: arranging a first core including a plurality of strands exposed from an insulating sheath of a first wire, onto a side of an anvil and a second core including a plurality of strands exposed from an insulating sheath of a second wire, onto a side of a horn for ultrasonic bonding, the second core being larger in sectional area than the first core; and bonding the first core and the second core together by ultrasonic bonding between the horn and the anvil.

Abstract: A system and method are provided for implementing relatively low temperature joining processes, including displacement/vibration welding techniques and/or heat staking techniques, in a process of building up laminate layers to form and/or manufacture three-dimensional objects, parts and components in additive material (AM) manufacturing systems. A multi-stage 3D object forming scheme is described involving steps of laminate cutting (with lasers or other cutting devices); laminate transport between processing stations (including using one or more of conveyors, robotic pick and place devices and the like); laminate stacking, clamping and adhering through comparatively low temperature welding or other mechanical joining (including displacement/vibration welding or heat staking); and mechanical surface finishing (via CNC machining or other comparable process).

Abstract: An inner conductor of a coaxial cable is electrically connected to a circuit body of a circuit board by means of solder. An outer conductor is electrically connected to a ground body by means of the solder. The inner conductor has a connecting portion connected to the circuit body and a non-exposed portion inside a sheath. A thickness of the connecting portion is equal to or less than 35% of a thickness of the non-exposed portion, and the cross-sectional area of the connecting portion is the same as the cross-sectional area of the non-exposed portion.

Abstract: An electronic device includes an electronic element, and a wire bonded to the electronic element. The electronic element includes a bonding pad to which the wire is bonded. The main component of the bonding pad is Al. A metal is mixed in the wire, and the mixed metal is one of Pt, Pd and Au.

Abstract: An ultrasonic bonding method of a conductor of an electric wire includes ultrasonically bonding strands forming a conductor of at least one electric wire using an anvil and horns. A first vibration mode of at least one of the horns is different from a second vibration mode of the other horns.

Abstract: An electric wire with a terminal and manufacturing method thereof is provided. In the electric wire with the terminal, the protective member, the core wire, and the terminal fitting are integrally connected to each other by ultrasonic vibration applied via the protective member from an ultrasonic horn in a state in which the core wire is sandwiched between the protective member and the terminal fitting. Therefore, there is no possibility that the ultrasonic horn directly presses the core wire, and the edge (particularly, the rear edge) of the pressing portion of the ultrasonic horn is direct in contact with the core wire. Thereby, at the time of ultrasonic bonding, stress concentration due to the edge (particularly the rear edge) of the pressing portion of the ultrasonic horn with respect to the core wire can be relaxed, and disconnection of the core wire can be suppressed.

Abstract: A system and method for forming a semiconductor die contact structure is disclosed. An embodiment comprises a top level metal contact, such as copper, with a thickness large enough to act as a buffer for underlying low-k, extremely low-k, or ultra low-k dielectric layers. A contact pad or post-passivation interconnect may be formed over the top level metal contact, and a copper pillar or solder bump may be formed to be in electrical connection with the top level metal contact.

Abstract: A composite negative electrode material, a method for preparing the composite negative electrode material, a negative electrode plate of a lithium ion secondary battery containing the composite negative electrode material, and a lithium ion secondary battery containing a negative electrode active material of the lithium ion secondary battery, where the composite negative electrode material includes a carbon core and a carbon coating layer, where the carbon coating layer is a carbon layer that coats a surface of the carbon core, and both the carbon core and the carbon coating layer include a doping element, where the doping element is at least one of element N, P, B, S, O, F, Cl, or H.

Abstract: A method of implanting a contact implant includes providing the contact implant, providing a plurality of anchoring implants having a plurality of through openings, placing the contact implant at an implantation location, and introducing a first one of the anchoring implants through a first of the plurality of through openings. Mechanical oscillations are applied, along a first axis, to the first one of the anchoring implants, thereby causing thermoplastic material of the implant to liquefy and interpenetrate portions of the tissue. A second one of the anchoring implants is introduced through a second one of the through openings to bring it in contact with the live tissue. Mechanical oscillations are applied, along a second axis, to the second one of the anchoring implants to cause thermoplastic material to be liquefied. The first and first and second axes are at a nonzero angle to each other.

Abstract: When a semiconductor element is bonded to a base plate electrode, a cushioning is used for protecting the surface of the semiconductor element. A protrusion having an outwardly cutting shape is formed around an area on the base plate electrode for bonding the semiconductor element to disperse and reduce shear force acting on the cushioning during the bonding, so that no cushioning adheres to the surface of the semiconductor element after bonding.

Abstract: In a vertical vibration joining apparatus where a resonator having a vibrator on one end side is horizontally attached to a supporting tool capable of ascending and descending, the resonator includes a cross horn of a cross shape in a front view and two boosters, the cross horn is for converting acoustic vibration transmitted from the vibrator from vibration in a lateral direction to vibration in a vertical direction orthogonal to the lateral direction, two boosters are provided at both ends of a pair of projection portions of the cross horn in the lateral direction, and portions to be supported to the supporting tool are coaxially and integrally provided on two boosters by bending outer peripheral faces of the boosters at minimum vibration amplitude points of vibration in the lateral direction resonating with the acoustic vibration transmitted from the vibrator outside in a diametrical direction to project the same annularly.

Abstract: A method for assembling cable wrapping tapes. From an adhesive tape parent roll, strip-like adhesive tapes (11), each having two cut edges (12a) on the sides, are produced from a textile material which has an adhesive coating (12) on one side, by cutting in the drawing direction of the parent roll. The cutting is performed using an ultrasound-excited cutting tool (1) and wherein the cutting is performed using a cooled cutting tool (1). An adhesive tape (11), having a strip-like textile carrier material (13) and an adhesive coating (12) applied to one side and two cut edges (12a) on the sides. The cut edges (12a) are created by ultrasound cutting, and the textile carrier material (13) of the carrier is fused to its cut edges (12a). No adhesive coating (12) exists on the cut edges (12a); which are free of lint and threads.

Abstract: A joint between an insulative sidewall of a medical electrical lead subassembly and an underlying fluoropolymer layer includes an interfacial layer. A first section of the interfacial layer is bonded to the fluoropolymer layer and is formed by a thermoplastic fluoropolymer; a second section of the interfacial layer extends adjacent the first section and is bonded to the insulative sidewall. The insulative sidewall, of the subassembly, and the second section, of the interfacial layer, are each formed from a material that is not a fluoropolymer. A recess is formed in the first section of the interfacial layer and the second section of the interfacial layer extends within the recess.

Abstract: An object of the present invention is to obtain a semiconductor device having highly reliable bonding portions. The semiconductor device according to the present invention includes an insulating substrate on which a conductive pattern is formed, and an electrode terminal and a semiconductor element which are bonded to the conductive pattern, the electrode terminal and the conductive pattern are bonded by ultrasonic bonding on a bonding face, and the ultrasonic bonding is performed at a plurality of positions.

Abstract: The invention relates to a device for welding rod-shaped electrical conductors (28, 29) provided with an outer insulating sheath (30), the device comprising a compression space (18) for receiving connecting regions of the conductors to be connected to each other, said compression space comprising at least one guiding element (41, 42) for axially positioning the conductors.

Abstract: In a method for manufacturing a terminal-equipped electrical wire a core wire of an electrical wire is connected to a flat plate-shaped electrical wire connector portion of a terminal. An ultrasonic welding jig including an anvil and a welding horn is provided. After the electrical wire connector portion is placed on the anvil, the core wire of the electrical wire is placed on the electrical wire connector portion. By applying ultrasonic vibration along the axial direction of the core wire while pressing the core wire using the welding horn, the core wire is ultrasonically welded to the electrical wire connector portion. On the upper surface of the wire connection portions of the terminal, a positioning groove, into which the core wire is fit, is formed in advance, and the core wire is placed on the electrical wire connector portion while being fit into the positioning groove.

Abstract: Disclosed are a battery module and a battery pack including the same, in which laser welding can be used for coupling three or more electrode leads to a single bus bar, thereby enhancing adhesion and improving the ease of a manufacturing process. The battery module includes: a plurality of secondary batteries, each including an electrode assembly, a case and an electrode lead; and a terminal bus bar having a plate-like coupling unit, wherein electrode leads of the same polarity provided in the three or more secondary batteries are coupled to the coupling unit, two or more electrode leads stacked to each other are in contact with one end of the coupling unit, and the other one or more electrode leads are in contact with the other end of the coupling unit.

Abstract: An electronic device includes an electronic element, and a wire bonded to the electronic element. The electronic element includes a bonding pad to which the wire is bonded. The main component of the bonding pad is Al. A metal is mixed in the wire, and the mixed metal is one of Pt, Pd and Au.

Abstract: A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element; (b) ultrasonically forming tack bonds between ones of the first conductive structures and respective ones of the second conductive structures; and (c) forming completed bonds between the first conductive structures and the second conductive structures.

Abstract: A manufacturing method for a terminal-equipped electric wire in which a terminal is crimped to an electric wire including a core wire bundle bundled by a plurality of conductor core wires, the manufacturing method includes ultrasonically bonding the core wire bundle so as to form a bonded core wire in which the plurality of conductor core wires are bonded to each other and crimping the terminal to the bonded core wire. The bonded core wire is formed so that a clearance ratio which is a percentage of a clearance area in which the conductor core wires do not exist to a whole area surrounded by an outer periphery of the bonded core wire is larger than 3 and equal to or less than 15 in a section view orthogonal to an axis of the bonded core wire.

Abstract: A semiconductor device includes two or more semiconductor elements, a lead with island portions on which the semiconductor elements are mounted, a heat dissipation member for dissipating heat from the island portions, a bonding layer bonding the island portions and the heat dissipation member, and a sealing resin covering the semiconductor elements, the island portions and a part of the heat dissipation member. The bonding layer includes mutually spaced individual regions provided for the island portions, respectively.