Abstract: The present disclosure relates to an electric wire connection structure including one or more copper-based conductor covered electric wires having a copper-based conductor covered part and exposed part; and one or more aluminum-based conductor covered electric wires having an aluminum-based conductor covered part and exposed part. An ultrasonic joint part is provided at a conductor stacked part in which the copper-based conductor exposed part and the aluminum-based conductor exposed part are superposed. A total contacting length L which is a summed length of a part at which the copper-based conductor exposed part and the aluminum-based conductor exposed part contact and a summed length x of a contour line of a space S formed at a part at which the copper-based conductor exposed part and the aluminum-based conductor exposed part are separate in a joint interface of the ultrasonic joint part satisfy a relational expression of (x/L)×100?10% based on cross-section observation.

Abstract: A cell structure for a secondary battery includes an electrode assembly including a plurality of electrodes, a plurality of electrode tabs extending from the electrodes to an outside of the electrode assembly, and a plurality of lead tabs electrically connected to the electrode tabs and contacting the electrode assembly. In the cell structure, a part of each of the lead tabs is folded, and the electrode tabs are inserted into the folded part of each of the lead tabs.

Abstract: An ultrasonic welding system is provided. The ultrasonic welding system includes a support structure for supporting a workpiece. The ultrasonic welding system also includes a weld head assembly including an ultrasonic converter carrying a sonotrode. The weld head assembly is moveable along a plurality of substantially horizontal axes. The sonotrode is configured to operate during a welding operation at a bond force of between 5-500 kg, and with a sonotrode tip motion amplitude of between 5-150 microns.

Abstract: The present disclosure generally relates to methods and apparatuses for additive manufacturing using foil-based build materials. Such methods and apparatuses eliminate several drawbacks of conventional powder-based methods, including powder handling, recoater jams, and health risks. In addition, the present disclosure provides methods and apparatuses for compensation of in-process warping of build plates and foil-based build materials, in-process monitoring, and closed loop control.

Abstract: A device for welding rod-shaped electrical conductors and a sonotrode for such includes a compression space for receiving two connection regions of the conductors to be connected, said connection regions extending in a first axial direction (x-axis), the compression space being defined by a working surface of a sonotrode, which transmits ultrasonic vibrations, and a counterface of an anvil at two opposite sides in a second axial direction (z-axis) and by a boundary surface of a slider element, displaceable in the second axial direction (z-axis), and a boundary surface of a boundary element on two opposite sides in a third axial direction (y-axis). In a special contact zone, which is a section of the working surface of the sonotrode and serves to subject at least one connection region to ultrasonic vibrations, the working surface has a surface configuration that differs from a contact zone formed by the remaining working surface.

Abstract: Disclosed are a joint of a copper terminal and an aluminium conductor and an ultrasonic welding method thereof. One spacing metal layer is added between the copper terminal and the aluminium conductor, and firstly, the spacing metal layer is fixed at a welding end of a base material by means of a manner such as electroplating, pressure welding, electric arc spray welding or electromagnetic welding, and the three parts are then welded together by means of an ultrasonic welding manner. The welding method is suitable for the welding of various joints, the electrochemical corrosion resulting from the potential difference between the copper and aluminium electrodes can be effectively reduced, and the mechanical properties of the joint can be improved.

Abstract: To provide a wire bonding apparatus, which is insusceptible to a bonding state at a second bonding point due to a wire cut error or the like, or to members such as a capillary and a wire, and is capable of automatically protruding the wire from a leading end of the capillary, provided is a wire bonding apparatus including: a capillary (6) having a through hole through which a wire (40) is to be inserted; a holding unit, which is provided above the capillary (6), and is configured to hold the wire (40) inserted through the capillary (6); and a vibrating unit configured to vertically vibrate the capillary (6). Under a state in which the holding unit holds the wire (40), the vibrating unit vertically vibrates the capillary (6) so that the wire (40) is protruded from the leading end of the capillary.

Abstract: A conductor connection device for joining a plurality of conductors with ultrasonic welding, the conductor connection device comprising: a horn including a contact surface that is brought into contact with the conductors, the horn being configured to be ultrasonically vibrated; a pair of restricting portions configured to be brought into contact with the contact surface and to be relatively movable along the contact surface; and an anvil that is relatively moved toward and away from the contact surface, the horn and the pair of restricting portions being moved relative to the anvil to sandwich the anvil between the pair of restricting portions facing each other, and at least one of the pair of restricting portions being moved toward the other.

Abstract: Ultrasonic filament modeling systems and methods may be utilized to achieve room-temperature 3-D printing of solid (>95%) metal materials. A vibrating tool is applied to a metal filament to form a voxel, inducing mechanical deformation as well as inter-and intra-layer mass transport. Desired structures may be built on a voxel-by-voxel basis. Additionally, by varying the applied ultrasonic energy, the microstructure of the resulting structure may be controlled.

Abstract: An apparatus configured to calibrate a wafer bonding apparatus includes a stage, a linear moving pin, a detector, and a data processing unit. The stage is configured to hold a wafer thereon, and the wafer includes a predetermined mark thereon. The linear moving pin is configured to push the wafer away from the stage. The detector is configured to detect a position of the predetermined mark when the linear moving pin applies a force to the wafer. The data processing unit receives information on the position of the predetermined mark from the detector and information on a corresponding force applied to the wafer by the linear moving pin, where the data processing unit is configured to compare the information with calibration information.

Abstract: A wire bonding method includes: arranging a first core including a plurality of strands exposed from an insulating sheath of a first wire, onto a side of an anvil and a second core including a plurality of strands exposed from an insulating sheath of a second wire, onto a side of a horn for ultrasonic bonding, the second core being larger in sectional area than the first core; and bonding the first core and the second core together by ultrasonic bonding between the horn and the anvil.

Abstract: A system and method are provided for implementing relatively low temperature joining processes, including displacement/vibration welding techniques and/or heat staking techniques, in a process of building up laminate layers to form and/or manufacture three-dimensional objects, parts and components in additive material (AM) manufacturing systems. A multi-stage 3D object forming scheme is described involving steps of laminate cutting (with lasers or other cutting devices); laminate transport between processing stations (including using one or more of conveyors, robotic pick and place devices and the like); laminate stacking, clamping and adhering through comparatively low temperature welding or other mechanical joining (including displacement/vibration welding or heat staking); and mechanical surface finishing (via CNC machining or other comparable process).

Abstract: An inner conductor of a coaxial cable is electrically connected to a circuit body of a circuit board by means of solder. An outer conductor is electrically connected to a ground body by means of the solder. The inner conductor has a connecting portion connected to the circuit body and a non-exposed portion inside a sheath. A thickness of the connecting portion is equal to or less than 35% of a thickness of the non-exposed portion, and the cross-sectional area of the connecting portion is the same as the cross-sectional area of the non-exposed portion.

Abstract: An electronic device includes an electronic element, and a wire bonded to the electronic element. The electronic element includes a bonding pad to which the wire is bonded. The main component of the bonding pad is Al. A metal is mixed in the wire, and the mixed metal is one of Pt, Pd and Au.

Abstract: An ultrasonic bonding method of a conductor of an electric wire includes ultrasonically bonding strands forming a conductor of at least one electric wire using an anvil and horns. A first vibration mode of at least one of the horns is different from a second vibration mode of the other horns.

Abstract: An electric wire with a terminal and manufacturing method thereof is provided. In the electric wire with the terminal, the protective member, the core wire, and the terminal fitting are integrally connected to each other by ultrasonic vibration applied via the protective member from an ultrasonic horn in a state in which the core wire is sandwiched between the protective member and the terminal fitting. Therefore, there is no possibility that the ultrasonic horn directly presses the core wire, and the edge (particularly, the rear edge) of the pressing portion of the ultrasonic horn is direct in contact with the core wire. Thereby, at the time of ultrasonic bonding, stress concentration due to the edge (particularly the rear edge) of the pressing portion of the ultrasonic horn with respect to the core wire can be relaxed, and disconnection of the core wire can be suppressed.

Abstract: A system and method for forming a semiconductor die contact structure is disclosed. An embodiment comprises a top level metal contact, such as copper, with a thickness large enough to act as a buffer for underlying low-k, extremely low-k, or ultra low-k dielectric layers. A contact pad or post-passivation interconnect may be formed over the top level metal contact, and a copper pillar or solder bump may be formed to be in electrical connection with the top level metal contact.

Abstract: A composite negative electrode material, a method for preparing the composite negative electrode material, a negative electrode plate of a lithium ion secondary battery containing the composite negative electrode material, and a lithium ion secondary battery containing a negative electrode active material of the lithium ion secondary battery, where the composite negative electrode material includes a carbon core and a carbon coating layer, where the carbon coating layer is a carbon layer that coats a surface of the carbon core, and both the carbon core and the carbon coating layer include a doping element, where the doping element is at least one of element N, P, B, S, O, F, Cl, or H.

Abstract: A method of implanting a contact implant includes providing the contact implant, providing a plurality of anchoring implants having a plurality of through openings, placing the contact implant at an implantation location, and introducing a first one of the anchoring implants through a first of the plurality of through openings. Mechanical oscillations are applied, along a first axis, to the first one of the anchoring implants, thereby causing thermoplastic material of the implant to liquefy and interpenetrate portions of the tissue. A second one of the anchoring implants is introduced through a second one of the through openings to bring it in contact with the live tissue. Mechanical oscillations are applied, along a second axis, to the second one of the anchoring implants to cause thermoplastic material to be liquefied. The first and first and second axes are at a nonzero angle to each other.

Abstract: When a semiconductor element is bonded to a base plate electrode, a cushioning is used for protecting the surface of the semiconductor element. A protrusion having an outwardly cutting shape is formed around an area on the base plate electrode for bonding the semiconductor element to disperse and reduce shear force acting on the cushioning during the bonding, so that no cushioning adheres to the surface of the semiconductor element after bonding.

Abstract: In a vertical vibration joining apparatus where a resonator having a vibrator on one end side is horizontally attached to a supporting tool capable of ascending and descending, the resonator includes a cross horn of a cross shape in a front view and two boosters, the cross horn is for converting acoustic vibration transmitted from the vibrator from vibration in a lateral direction to vibration in a vertical direction orthogonal to the lateral direction, two boosters are provided at both ends of a pair of projection portions of the cross horn in the lateral direction, and portions to be supported to the supporting tool are coaxially and integrally provided on two boosters by bending outer peripheral faces of the boosters at minimum vibration amplitude points of vibration in the lateral direction resonating with the acoustic vibration transmitted from the vibrator outside in a diametrical direction to project the same annularly.

Abstract: A method for assembling cable wrapping tapes. From an adhesive tape parent roll, strip-like adhesive tapes (11), each having two cut edges (12a) on the sides, are produced from a textile material which has an adhesive coating (12) on one side, by cutting in the drawing direction of the parent roll. The cutting is performed using an ultrasound-excited cutting tool (1) and wherein the cutting is performed using a cooled cutting tool (1). An adhesive tape (11), having a strip-like textile carrier material (13) and an adhesive coating (12) applied to one side and two cut edges (12a) on the sides. The cut edges (12a) are created by ultrasound cutting, and the textile carrier material (13) of the carrier is fused to its cut edges (12a). No adhesive coating (12) exists on the cut edges (12a); which are free of lint and threads.

Abstract: A joint between an insulative sidewall of a medical electrical lead subassembly and an underlying fluoropolymer layer includes an interfacial layer. A first section of the interfacial layer is bonded to the fluoropolymer layer and is formed by a thermoplastic fluoropolymer; a second section of the interfacial layer extends adjacent the first section and is bonded to the insulative sidewall. The insulative sidewall, of the subassembly, and the second section, of the interfacial layer, are each formed from a material that is not a fluoropolymer. A recess is formed in the first section of the interfacial layer and the second section of the interfacial layer extends within the recess.

Abstract: An object of the present invention is to obtain a semiconductor device having highly reliable bonding portions. The semiconductor device according to the present invention includes an insulating substrate on which a conductive pattern is formed, and an electrode terminal and a semiconductor element which are bonded to the conductive pattern, the electrode terminal and the conductive pattern are bonded by ultrasonic bonding on a bonding face, and the ultrasonic bonding is performed at a plurality of positions.

Abstract: The invention relates to a device for welding rod-shaped electrical conductors (28, 29) provided with an outer insulating sheath (30), the device comprising a compression space (18) for receiving connecting regions of the conductors to be connected to each other, said compression space comprising at least one guiding element (41, 42) for axially positioning the conductors.

Abstract: In a method for manufacturing a terminal-equipped electrical wire a core wire of an electrical wire is connected to a flat plate-shaped electrical wire connector portion of a terminal. An ultrasonic welding jig including an anvil and a welding horn is provided. After the electrical wire connector portion is placed on the anvil, the core wire of the electrical wire is placed on the electrical wire connector portion. By applying ultrasonic vibration along the axial direction of the core wire while pressing the core wire using the welding horn, the core wire is ultrasonically welded to the electrical wire connector portion. On the upper surface of the wire connection portions of the terminal, a positioning groove, into which the core wire is fit, is formed in advance, and the core wire is placed on the electrical wire connector portion while being fit into the positioning groove.

Abstract: Disclosed are a battery module and a battery pack including the same, in which laser welding can be used for coupling three or more electrode leads to a single bus bar, thereby enhancing adhesion and improving the ease of a manufacturing process. The battery module includes: a plurality of secondary batteries, each including an electrode assembly, a case and an electrode lead; and a terminal bus bar having a plate-like coupling unit, wherein electrode leads of the same polarity provided in the three or more secondary batteries are coupled to the coupling unit, two or more electrode leads stacked to each other are in contact with one end of the coupling unit, and the other one or more electrode leads are in contact with the other end of the coupling unit.

Abstract: An electronic device includes an electronic element, and a wire bonded to the electronic element. The electronic element includes a bonding pad to which the wire is bonded. The main component of the bonding pad is Al. A metal is mixed in the wire, and the mixed metal is one of Pt, Pd and Au.

Abstract: A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element; (b) ultrasonically forming tack bonds between ones of the first conductive structures and respective ones of the second conductive structures; and (c) forming completed bonds between the first conductive structures and the second conductive structures.

Abstract: A manufacturing method for a terminal-equipped electric wire in which a terminal is crimped to an electric wire including a core wire bundle bundled by a plurality of conductor core wires, the manufacturing method includes ultrasonically bonding the core wire bundle so as to form a bonded core wire in which the plurality of conductor core wires are bonded to each other and crimping the terminal to the bonded core wire. The bonded core wire is formed so that a clearance ratio which is a percentage of a clearance area in which the conductor core wires do not exist to a whole area surrounded by an outer periphery of the bonded core wire is larger than 3 and equal to or less than 15 in a section view orthogonal to an axis of the bonded core wire.

Abstract: A semiconductor device includes two or more semiconductor elements, a lead with island portions on which the semiconductor elements are mounted, a heat dissipation member for dissipating heat from the island portions, a bonding layer bonding the island portions and the heat dissipation member, and a sealing resin covering the semiconductor elements, the island portions and a part of the heat dissipation member. The bonding layer includes mutually spaced individual regions provided for the island portions, respectively.

Abstract: A wire bonding machine window clamp assembly. The assembly includes a support plate adapted to support a leadframe strip. The assembly also includes a frame structure defining a central clamp opening adapted to expose a portion of the leadframe strip. The frame structure includes at least one elongate frame member having a first surface portion adapted to engage a top surface of the leadframe strip and a second surface portion adapted to engage upper surfaces of integrated circuit (“IC”) component stacks mounted on the leadframe strip.

Abstract: A sonotrode that includes a sealing face; a front quarter wavelength region adjacent to the sealing face, wherein the front quarter wavelength region has been modified to increase the gain of the sonotrode; and a rear quarter wavelength region adjacent to the front quarter wavelength region, wherein the rear quarter wavelength region has been modified to create a non-uniform amplitude profile across the length of the sealing face of the sonotrode.

Abstract: An ultrasonic instrument comprises a handle assembly configured to receive an ultrasonic transducer, a shaft assembly having an acoustic waveguide and an ultrasonic blade, and a retractable clamp arm. The ultrasonic blade is in acoustic communication with the acoustic waveguide such that the ultrasonic transducer is operable to drive the ultrasonic blade to vibrate ultrasonically via the acoustic waveguide. The clamp arm is configured to selectively translate between an inoperative position and an operative position. The clamp arm is positioned generally proximal to the ultrasonic blade when the clamp arm is in the inoperative position. The clamp arm is positioned lateral to the ultrasonic blade when the clamp arm is in the operative position. When in the operative position, the clamp arm is operable to move toward and away from the ultrasonic blade so as to capture and compress tissue between the clamp arm and the ultrasonic blade.

Abstract: A semiconductor device includes an electronic component that includes an oscillator and has terminals on one face. A semiconductor chip is electrically connected to the electronic component and also includes terminals on one face thereof. The electronic component and the semiconductor chip are mounted to a mounting base such that the terminals of the electronic component and the terminals of the semiconductor chip face in the same direction. First bonding wires are connected to the terminals of the semiconductor chip, and second bonding wires having an apex height smaller than that of the first bonding wires connect the terminals of the electronic component to the terminals of the semiconductor chip. A sealing member completely seals within at least the electronic component.

Abstract: In wire bonding in assembling of a semiconductor device, an Al wire is coupled to a lead section by a wedge which is a bonding tool, thereafter, the wedge is withdrawn from the top of the lead section and a cutter is lowered and the Al wire is cut off in this state. Lowering of the cutter is stopped at a point in time that a stopper which is lowered simultaneously with lowering of the cutter has truck against the lead section and cutting of the Al wire is terminated by stopping of lowering of the cutter.

Abstract: Systems and methods in accordance with embodiments of the invention fabricate objects including metallic glass-based materials using ultrasonic welding. In one embodiment, a method of fabricating an object that includes a metallic glass-based material includes: ultrasonically welding at least one ribbon to a surface; where at least one ribbon that is ultrasonically welded to a surface has a thickness of less than approximately 150 ?m; and where at least one ribbon that is ultrasonically welded to a surface includes a metallic glass-based material.

Abstract: The present invention is to provide an hermetic-sealing package member including a substrate and at least one frame-like sealing material for defining a sealing region formed on the substrate, in which the sealing material is formed of a sintered body obtained by sintering at least one metal powder selected from gold, silver, palladium, or platinum having a purity of 99.9 wt % or greater and an average particle size of 0.005 ?m to 1.0 ?m, and with respect to an arbitrary cross-section toward an outside from the sealing region, a length of an upper end of the sealing material is shorter than a length of a lower end. Examples of a cross-sectional shape of the sealing material may include one formed to have a base portion having a certain height and at least one mountain portion protruding from the base portion or one formed to have a mountain portion having substantially a triangular shape in which the length of the lower end of the sealing material is a bottom.

Abstract: Disclosed herein is a method of making a structure by ultrasonic welding and superplastic forming. The method comprises assembling a plurality of workpieces comprising a first workpiece including a first material having superplastic characteristics; ultrasonically welding the first workpiece to a second workpiece, to form an assembly; heating the assembly to a temperature at which the first material having superplastic characteristics is capable of superplastic deformation, and injecting a fluid between the first workpiece and the second workpiece to form a cavity between the first workpiece and the second workpiece.

Abstract: An embodiment bump on trace (BOT) structure includes a contact element supported by an integrated circuit, an under bump metallurgy (UBM) feature electrically coupled to the contact element, a metal ladder bump mounted on the under bump metallurgy feature, the metal ladder bump having a first tapering profile, and a substrate trace mounted on a substrate, the substrate trace having a second tapering profile and coupled to the metal ladder bump through direct metal-to-metal bonding. An embodiment chip-to-chip structure may be fabricated in a similar fashion.

Abstract: An integrated circuit wire bond connection is provided having an aluminum bond pad (51) that is directly bonded to a copper ball (52) to form an aluminum splash structure (53) and associated crevice opening (55) at a peripheral bond edge of the copper ball (54), where the aluminum splash structure (53) is characterized by a plurality of geometric properties indicative of a reliable copper ball bond, such as lateral splash size, splash shape, relative position of splash-ball crevice to the aluminum pad, crevice width, crevice length, crevice angle, and/or crevice-pad splash index.

Abstract: A friction stir welding apparatus has a probe rotatable and vertically movable with respect to a processing target member, a welding tool having an interposed member that covers a part of an outer periphery of the probe and is rotatable relative to the probe, a mounting member on which the processing target member is mounted, a movement mechanism having an arm fitted with the welding tool that can move the welding tool with respect to the processing target member by moving the arm, and a correction mechanism having a correction member that can correct a moving direction of the welding tool so as to be matched with a predetermined processing direction, by bringing the interposed member into contact with the processing target member when the welding tool is moved with respect to the processing target member by moving the arm, and fixed to the mounting member.

Abstract: A device for deflecting mechanical oscillations, at an oscillation receiver location may be set into oscillation along a first axis, and transmits such an oscillation into an oscillation along a second axis at an oscillation output location, wherein the first and the second axis form an angle to one another. The device includes an elongate, bent oscillation element, on whose one end a coupling-in point and at whose other end a coupling-out point is arranged, wherein the device is designed such that the oscillation element oscillates transversally at the coupling-in point and at the coupling-out point, when the oscillation receiver location is subjected to an oscillation.

Abstract: A method of attaching bond wires to bond pads on an active surface of a semiconductor die, where the bond pads are disposed along four side edges of the die, and have aluminum top layers. The method includes attaching first bond wires to first bond pads on first and second opposing sides of the die using a first group of settings and attaching second bond wires to the bond pads on third and fourth sides of the die that oppose each other and are adjacent the first and second sides, using a second group of settings. The first and second groups of settings include first and second scrub settings that are different from each other. Employing two separate scrub settings allows for reduced splashing of the aluminum cap layer on the die pad from splashing onto passivation edges of the bond pads.

Abstract: One embodiment is directed to a welding pad capable of receiving a ball-shaped copper wire at its end, including a first copper pad coated with a protection layer and topped with a second pad containing aluminum having dimensions smaller than those of the first pad and smaller than the ball diameter once said ball has been welded to the welding pad.

Abstract: Friction stir spot-welding is performed to join together a stack of a plurality of metal foils and a metal sheet by using a double-acting type rotary tool including a hollow member and a pin member which are movable independently of each other in their axial directions, and a clamp member which is fitted on an outer circumferential surface of the hollow member and which is movable in its axial direction. While an outer annular part of a portion to be friction-stirred is pressed with the clamp member, the pin member is inserted into the above-described portion and the hollow member is retracted, whereby a metal mass is accommodated within a space formed between the above-described portion and the hollow member. Then, the hollow member is advanced to press the metal mass into a hole formed by retraction of the pin member, whereby the hole is filled with the metal mass.

Abstract: A coil component is provided with a coil, a base supporting the coil having a first surface parallel to an extending direction of the terminal section of the coil, and a terminal electrode having a first terminal portion printed on the first surface of the base. The first surface has a stepped surface including an upper stage surface and a lower stage surface. The first terminal portion has a stepped shape including an upper stage portion formed on the upper stage surface and a lower stage portion formed on the lower stage surface. The upper stage portion has a first terminal surface contacting the terminal section of the coil. The lower stage portion has a second terminal surface positioned on an extension line of the terminal section of the coil and not contacting the terminal section of the coil.

Abstract: An integrated circuit copper wire bond connection is provided having a copper ball (32) bonded directly to an aluminum bond pad (31) formed on a low-k dielectric layer (30) to form a bond interface structure for the copper ball characterized by a first plurality of geometric features to provide thermal cycling reliability, including an aluminum minima feature (Z1, Z2) located at an outer peripheral location (42) under the copper ball to prevent formation and/or propagation of cracks in the aluminum bond pad.

Abstract: An embodiment of a method of attaching a semiconductor die to a substrate includes placing a bottom surface of the die over a top surface of the substrate with an intervening die attach material. The method further includes contacting a top surface of the semiconductor die and the top surface of the substrate with a conformal structure that includes a non-solid, pressure transmissive material, and applying a pressure to the conformal structure. The pressure is transmitted by the non-solid, pressure transmissive material to the top surface of the semiconductor die. The method further includes, while applying the pressure, exposing the assembly to a temperature that is sufficient to cause the die attach material to sinter. Before placing the die over the substrate, conductive mechanical lock features may be formed on the top surface of the substrate, and/or on the bottom surface of the semiconductor die.

Abstract: A method for manufacturing an electronic device using ultrasonic joining, when the component members of the electronic device includes different structures. The method includes obtaining a joining condition that provides press-down amounts for the materials to be joined at predetermined values. The press-down amount generated by a horn and a supporting member biting into the materials during ultrasonic joining is predetermined for each specific structure of the component member of the electronic device.